KR20100099309A - 광전 소자 - Google Patents

광전 소자 Download PDF

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Publication number
KR20100099309A
KR20100099309A KR1020107016078A KR20107016078A KR20100099309A KR 20100099309 A KR20100099309 A KR 20100099309A KR 1020107016078 A KR1020107016078 A KR 1020107016078A KR 20107016078 A KR20107016078 A KR 20107016078A KR 20100099309 A KR20100099309 A KR 20100099309A
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KR
South Korea
Prior art keywords
metal body
layer
base
layer sequence
optoelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107016078A
Other languages
English (en)
Korean (ko)
Inventor
시에그프리드 헤르만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20100099309A publication Critical patent/KR20100099309A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

Landscapes

  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020107016078A 2007-12-20 2008-12-04 광전 소자 Ceased KR20100099309A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007061480.4 2007-12-20
DE102007061480 2007-12-20
DE102008011809.5 2008-02-29
DE102008011809A DE102008011809A1 (de) 2007-12-20 2008-02-29 Optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
KR20100099309A true KR20100099309A (ko) 2010-09-10

Family

ID=40690045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107016078A Ceased KR20100099309A (ko) 2007-12-20 2008-12-04 광전 소자

Country Status (8)

Country Link
US (1) US8476667B2 (enExample)
EP (1) EP2223354B1 (enExample)
JP (1) JP5568476B2 (enExample)
KR (1) KR20100099309A (enExample)
CN (1) CN101904022B (enExample)
DE (1) DE102008011809A1 (enExample)
TW (1) TWI431806B (enExample)
WO (1) WO2009079978A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243709A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 発光モジュール及びこれを備えた照明装置
DE102010045390B4 (de) 2010-09-15 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils
DE102011017633A1 (de) * 2011-04-27 2012-10-31 Osram Ag Verfahren zum Bilden einer Leuchtstoffanordnung und dazugehörige Leuchtstoffanordnung
DE102013205179A1 (de) * 2013-03-25 2014-09-25 Osram Gmbh Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe
DE102013112826B4 (de) * 2013-11-20 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement umfassend eine Haftschicht und Verfahren zur Herstellung einer Haftschicht in einem optoelektronischen Bauelement
DE102014116080A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2016142258A1 (en) 2015-03-11 2016-09-15 Koninklijke Philips N.V. Light emitting device cooling
DE102017102247A1 (de) 2017-02-06 2018-08-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Herstellungsverfahren hierfür
IT201700070601A1 (it) * 2017-06-23 2018-12-23 Laser Point S R L Rilevatore veloce di radiazione elettromagnetica.

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3991339A (en) * 1975-05-27 1976-11-09 Rca Corporation Light emitting diode with reflector
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JPH10294493A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 半導体発光デバイス
DE10040448A1 (de) 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
JP4019690B2 (ja) * 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP2003324214A (ja) * 2002-04-30 2003-11-14 Omron Corp 発光モジュール
US6650018B1 (en) * 2002-05-24 2003-11-18 Axt, Inc. High power, high luminous flux light emitting diode and method of making same
JP2005535144A (ja) * 2002-07-31 2005-11-17 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 表面実装可能な半導体素子及び該半導体素子の製造のための方法
DE10234978A1 (de) 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4233280B2 (ja) * 2002-08-02 2009-03-04 株式会社沖デジタルイメージング Ｌｅｄアレイ
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED
JP2004140185A (ja) * 2002-10-17 2004-05-13 Matsushita Electric Ind Co Ltd 発光装置
WO2005091388A1 (en) * 2004-03-18 2005-09-29 Matsushita Electric Industrial Co., Ltd. Nitride based led with a p-type injection region
KR20070041411A (ko) 2004-07-12 2007-04-18 로무 가부시키가이샤 반도체 발광 소자
JP2006093672A (ja) * 2004-08-26 2006-04-06 Toshiba Corp 半導体発光装置
EP1635403B1 (de) * 2004-09-08 2013-04-03 Asetronics AG Isoliertes Metallsubstrat mit mehreren Leuchtdioden
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
JP4579654B2 (ja) * 2004-11-11 2010-11-10 パナソニック株式会社 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置
JP2006173433A (ja) 2004-12-17 2006-06-29 Ube Ind Ltd 光変換用セラミック複合体およびそれを用いた発光装置
KR100672316B1 (ko) * 2005-02-22 2007-01-24 엘지전자 주식회사 유기 ｅｌ 소자
JP2006278766A (ja) * 2005-03-29 2006-10-12 Seiko Epson Corp 発光素子の実装構造及び実装方法
DE102005025416A1 (de) * 2005-06-02 2006-12-14 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Kontaktstruktur
JP4640010B2 (ja) 2005-07-19 2011-03-02 カシオ計算機株式会社 照明装置及び液晶表示モジュール
DE102005041099A1 (de) * 2005-08-30 2007-03-29 Osram Opto Semiconductors Gmbh LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik
TWI331406B (en) 2005-12-14 2010-10-01 Advanced Optoelectronic Tech Single chip with multi-led
TW200744227A (en) * 2006-05-19 2007-12-01 Chen Shiang Mian White LED light source and manufacturing method of fluorescent powder thereof
DE102007004301A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
JP2008135694A (ja) * 2006-10-31 2008-06-12 Hitachi Cable Ltd Ｌｅｄモジュール
US8188497B2 (en) * 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement

Also Published As

Publication number Publication date
CN101904022A (zh) 2010-12-01
EP2223354A1 (de) 2010-09-01
DE102008011809A1 (de) 2009-06-25
US8476667B2 (en) 2013-07-02
WO2009079978A1 (de) 2009-07-02
CN101904022B (zh) 2013-10-23
JP2011507285A (ja) 2011-03-03
TWI431806B (zh) 2014-03-21
US20100308362A1 (en) 2010-12-09
EP2223354B1 (de) 2017-07-05
JP5568476B2 (ja) 2014-08-06
TW200943588A (en) 2009-10-16

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