WO2012034764A1 - Galvanisch beschichtetes optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronisches halbleiterbauteils - Google Patents
Galvanisch beschichtetes optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronisches halbleiterbauteils Download PDFInfo
- Publication number
- WO2012034764A1 WO2012034764A1 PCT/EP2011/062916 EP2011062916W WO2012034764A1 WO 2012034764 A1 WO2012034764 A1 WO 2012034764A1 EP 2011062916 W EP2011062916 W EP 2011062916W WO 2012034764 A1 WO2012034764 A1 WO 2012034764A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic semiconductor
- semiconductor chip
- metallic carrier
- electrically insulating
- semiconductor component
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 251
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 236
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008021 deposition Effects 0.000 claims description 9
- 230000005670 electromagnetic radiation Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 210000001654 germ layer Anatomy 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000007772 electroless plating Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 239000012777 electrically insulating material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910015400 FeC13 Inorganic materials 0.000 description 1
- -1 alumina or titania Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- An object to be solved is to provide an optoelectronic semiconductor device, the improved thermal
- Semiconductor chip is then formed by a laser diode or by a light emitting diode.
- the optoelectronic semiconductor chip is a part of the optoelectronic semiconductor chip.
- the second main surface can then serve as a mounting surface with which the optoelectronic
- a seed layer is applied to the side of the optoelectronic side facing away from the intermediate carrier
- the metallic carrier is at least one contact point of the optoelectronic Semiconductor chips electrically conductively connected, for example, the side facing away from the optoelectronic semiconductor chip side of the metallic carrier then forms at least one
- the metallic carrier comprises subareas that are electrically insulated from one another, wherein each of the subregions forms an electrical connection point of the optoelectronic semiconductor component, and the
- connection points are unequal names. That is, the metallic carrier is divided into at least two subregions, the connection points to the n- and p-side
- the optoelectronic semiconductor device is surface mountable, wherein the
- the optoelectronic semiconductor chip can be completely separated from the electrical surface at its side surfaces
- Form connecting points of the optoelectronic semiconductor device which may be unlike names.
- Figures 1A and 1B show schematically
- the optoelectronic semiconductor chip 1 On top of a first major surface la. On its underside, the optoelectronic semiconductor chip 1 has a second main surface 1b.
- the optoelectronic semiconductor chip is cuboid, so that the first
- the optoelectronic semiconductor component further comprises a metallic carrier 2.
- the metallic carrier is produced by galvanic or electroless deposition.
- a seed layer 21 is arranged, which has a mechanically strong connection between the metallic carrier 2 and the optoelectronic
- the carrier 2 has two partial regions 2 a, 2 b, which are electrically insulated from one another by an electrically insulating material 3.
- the electrically insulating material may be formed, for example, with silicone, epoxy, a ceramic material or a glass-containing material.
- the subareas 2a, 2b form unequal connection points of the optoelectronic semiconductor chip 1. For example, they are with
- insulating layer 4 do not project beyond each other.
- Example be fixed by soldering.
- the metallic carrier 2 then forms a first electrical connection point of the optoelectronic semiconductor component.
- Separation structures for example, by exposure and developing a photoresist 12 on the side facing away from the intermediate carrier 5 side of the seed layer 21 is formed.
- the isolating structures 12 form electrical insulators during the deposition of the carrier composite 20 galvanically or de-energized.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180044634.1A CN103140948B (zh) | 2010-09-15 | 2011-07-27 | 电镀覆层的光电子半导体组件和用于制造光电子半导体组件的方法 |
KR1020137008900A KR101505336B1 (ko) | 2010-09-15 | 2011-07-27 | 갈바니 코팅된 광전자 반도체 소자 및 광전자 반도체 소자의 제조 방법 |
EP11743492.8A EP2617071A1 (de) | 2010-09-15 | 2011-07-27 | Galvanisch beschichtetes optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronisches halbleiterbauteils |
US13/823,726 US9041020B2 (en) | 2010-09-15 | 2011-07-27 | Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010045390.0 | 2010-09-15 | ||
DE102010045390A DE102010045390A1 (de) | 2010-09-15 | 2010-09-15 | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012034764A1 true WO2012034764A1 (de) | 2012-03-22 |
Family
ID=44630240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/062916 WO2012034764A1 (de) | 2010-09-15 | 2011-07-27 | Galvanisch beschichtetes optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronisches halbleiterbauteils |
Country Status (6)
Country | Link |
---|---|
US (1) | US9041020B2 (de) |
EP (1) | EP2617071A1 (de) |
KR (1) | KR101505336B1 (de) |
CN (1) | CN103140948B (de) |
DE (1) | DE102010045390A1 (de) |
WO (1) | WO2012034764A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9172012B2 (en) | 2007-10-31 | 2015-10-27 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US9666762B2 (en) | 2007-10-31 | 2017-05-30 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US9082921B2 (en) * | 2007-10-31 | 2015-07-14 | Cree, Inc. | Multi-die LED package |
DE102010045390A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
US20130075928A1 (en) * | 2011-09-23 | 2013-03-28 | Texas Instruments Incorporated | Integrated circuit and method of making |
KR101961310B1 (ko) * | 2012-07-09 | 2019-07-17 | 엘지이노텍 주식회사 | 발광 장치 |
DE102012108160A1 (de) * | 2012-09-03 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102012111245A1 (de) * | 2012-11-21 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips |
DE102015103571A1 (de) * | 2015-03-11 | 2016-09-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl an Konversionselementen, Konversionselement und optoelektronisches Bauelement |
DE102015119343B4 (de) * | 2015-11-10 | 2024-05-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anordnung mit einem Träger aus einem Glasmaterial und einem optoelektronischen Halbleiterbauteil und Verfahren zum Herstellen einer solchen Anordnung |
DE102017104742A1 (de) * | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102017106410A1 (de) | 2017-03-24 | 2018-09-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
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JP2004047704A (ja) * | 2002-07-11 | 2004-02-12 | Sharp Corp | 窒化物系半導体発光素子の製造方法およびその製品 |
WO2006032252A1 (de) | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Seitlich optisch gepumpter oberflächenemittierender halbleiterlaser auf einer wärmesenke |
EP1653523A2 (de) * | 2004-10-28 | 2006-05-03 | LumiLeds Lighting U.S., LLC | Leuchtdioden-Verpackung |
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DE102010045390A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
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DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
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-
2010
- 2010-09-15 DE DE102010045390A patent/DE102010045390A1/de active Pending
-
2011
- 2011-07-27 KR KR1020137008900A patent/KR101505336B1/ko active IP Right Grant
- 2011-07-27 CN CN201180044634.1A patent/CN103140948B/zh active Active
- 2011-07-27 US US13/823,726 patent/US9041020B2/en active Active
- 2011-07-27 EP EP11743492.8A patent/EP2617071A1/de not_active Withdrawn
- 2011-07-27 WO PCT/EP2011/062916 patent/WO2012034764A1/de active Application Filing
Patent Citations (10)
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JP2004047704A (ja) * | 2002-07-11 | 2004-02-12 | Sharp Corp | 窒化物系半導体発光素子の製造方法およびその製品 |
WO2006032252A1 (de) | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Seitlich optisch gepumpter oberflächenemittierender halbleiterlaser auf einer wärmesenke |
EP1653523A2 (de) * | 2004-10-28 | 2006-05-03 | LumiLeds Lighting U.S., LLC | Leuchtdioden-Verpackung |
DE102005053274A1 (de) | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement |
US20070077673A1 (en) * | 2005-10-05 | 2007-04-05 | Samsung Electro-Mechanics Co., Ltd | Method for manufacturing vertically structured light emitting diode |
US20080113462A1 (en) * | 2006-11-14 | 2008-05-15 | Samsung Electronics Co., Ltd | Method of manufacturing vertical light emitting device |
DE102007029370A1 (de) * | 2007-05-04 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
DE102007035896A1 (de) * | 2007-07-31 | 2009-02-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und optoelektronisches Bauelement |
WO2009079978A1 (de) | 2007-12-20 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement |
DE102010045390A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
Also Published As
Publication number | Publication date |
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KR101505336B1 (ko) | 2015-03-23 |
KR20130054414A (ko) | 2013-05-24 |
DE102010045390A1 (de) | 2012-03-15 |
US9041020B2 (en) | 2015-05-26 |
EP2617071A1 (de) | 2013-07-24 |
CN103140948A (zh) | 2013-06-05 |
CN103140948B (zh) | 2016-05-11 |
US20130240918A1 (en) | 2013-09-19 |
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