WO2009069248A1 - フレキシブル半導体装置の製造方法およびフレキシブル半導体装置 - Google Patents

フレキシブル半導体装置の製造方法およびフレキシブル半導体装置 Download PDF

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Publication number
WO2009069248A1
WO2009069248A1 PCT/JP2008/002759 JP2008002759W WO2009069248A1 WO 2009069248 A1 WO2009069248 A1 WO 2009069248A1 JP 2008002759 W JP2008002759 W JP 2008002759W WO 2009069248 A1 WO2009069248 A1 WO 2009069248A1
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WIPO (PCT)
Prior art keywords
semiconductor device
flexible semiconductor
insulating film
gate electrode
metal layer
Prior art date
Application number
PCT/JP2008/002759
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English (en)
French (fr)
Inventor
Koichi Hirano
Seiichi Nakatani
Shingo Komatsu
Yoshihisa Yamashita
Takashi Ichiryu
Original Assignee
Panasonic Corporation
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Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2009522849A priority Critical patent/JP4370366B2/ja
Priority to CN2008800013199A priority patent/CN101569001B/zh
Priority to US12/518,602 priority patent/US7851281B2/en
Publication of WO2009069248A1 publication Critical patent/WO2009069248A1/ja
Priority to US12/939,729 priority patent/US7977741B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Abstract

　無機絶縁膜３５の両面に第１金属層２３及び第２金属層２５が積層された３層クラッド箔からなる積層膜を用意し、第２金属層２５の一部をエッチングすることによって、ゲート電極２０ｇを形成した後、第１金属層２３の一部をエッチングすることによって、ゲート電極２０ｇに対応する部位に、ソース・ドレイン電極２０ｓ、２０ｄを形成する。その後、ソース・ドレイン電極２０ｓ、２０ｄに接触し、無機絶縁膜３５を介してゲート電極２０ｇ上に、半導体層４０を形成する。ここで、ゲート電極２０ｇ上の無機絶縁膜３５はゲート絶縁膜３０として機能し、無機絶縁膜３５上のソース・ドレイン電極２０ｓ、２０ｄ間にある半導体層４０はチャネルとして機能する。
PCT/JP2008/002759 2007-11-28 2008-10-01 フレキシブル半導体装置の製造方法およびフレキシブル半導体装置 WO2009069248A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009522849A JP4370366B2 (ja) 2007-11-28 2008-10-01 フレキシブル半導体装置の製造方法およびフレキシブル半導体装置
CN2008800013199A CN101569001B (zh) 2007-11-28 2008-10-01 挠性半导体装置的制造方法及挠性半导体装置
US12/518,602 US7851281B2 (en) 2007-11-28 2008-10-01 Manufacturing method of flexible semiconductor device and flexible semiconductor device
US12/939,729 US7977741B2 (en) 2007-11-28 2010-11-04 Manufacturing method of flexible semiconductor device and flexible semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007306755 2007-11-28
JP2007-306755 2007-11-28

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/518,602 A-371-Of-International US7851281B2 (en) 2007-11-28 2008-10-01 Manufacturing method of flexible semiconductor device and flexible semiconductor device
US12/939,729 Division US7977741B2 (en) 2007-11-28 2010-11-04 Manufacturing method of flexible semiconductor device and flexible semiconductor device

Publications (1)

Publication Number Publication Date
WO2009069248A1 true WO2009069248A1 (ja) 2009-06-04

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PCT/JP2008/002759 WO2009069248A1 (ja) 2007-11-28 2008-10-01 フレキシブル半導体装置の製造方法およびフレキシブル半導体装置

Country Status (5)

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US (2) US7851281B2 (ja)
JP (1) JP4370366B2 (ja)
KR (1) KR101376896B1 (ja)
CN (1) CN101569001B (ja)
WO (1) WO2009069248A1 (ja)

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WO2010016207A1 (ja) * 2008-08-04 2010-02-11 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2010016206A1 (ja) * 2008-08-04 2010-02-11 パナソニック株式会社 フレキシブル半導体装置の製造方法
WO2010032355A1 (ja) * 2008-09-18 2010-03-25 パナソニック株式会社 フレキシブル半導体装置の製造方法及びそれに使用される積層膜
WO2010058541A1 (ja) * 2008-11-18 2010-05-27 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
WO2010134234A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 フレキシブル半導体装置の製造方法
JP2014504444A (ja) * 2010-11-26 2014-02-20 プラスティック ロジック リミテッド 電子デバイス
WO2016158182A1 (ja) * 2015-03-30 2016-10-06 日本写真印刷株式会社 薄膜トランジスタの製造方法、および薄膜トランジスタ

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EP2571043A1 (en) * 2010-05-14 2013-03-20 Panasonic Corporation Flexible semiconductor device, manufacturing method for same, and image display device
CN102812541B (zh) * 2011-03-24 2016-02-03 松下知识产权经营株式会社 挠性半导体装置及其制造方法、以及使用挠性半导体装置的图像显示装置及其制造方法
KR102067122B1 (ko) * 2012-01-10 2020-01-17 삼성디스플레이 주식회사 박막 트랜지스터 및 이의 제조 방법
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JP2014504444A (ja) * 2010-11-26 2014-02-20 プラスティック ロジック リミテッド 電子デバイス
WO2016158182A1 (ja) * 2015-03-30 2016-10-06 日本写真印刷株式会社 薄膜トランジスタの製造方法、および薄膜トランジスタ
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JP2016192438A (ja) * 2015-03-30 2016-11-10 日本写真印刷株式会社 薄膜トランジスタの製造方法、および薄膜トランジスタ

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CN101569001A (zh) 2009-10-28
JPWO2009069248A1 (ja) 2011-04-07
US7851281B2 (en) 2010-12-14
US20100012936A1 (en) 2010-01-21
JP4370366B2 (ja) 2009-11-25
CN101569001B (zh) 2011-09-28
US7977741B2 (en) 2011-07-12
KR20100086930A (ko) 2010-08-02
US20110049598A1 (en) 2011-03-03
KR101376896B1 (ko) 2014-03-20

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