WO2009066692A1 - パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール - Google Patents

パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール Download PDF

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Publication number
WO2009066692A1
WO2009066692A1 PCT/JP2008/071018 JP2008071018W WO2009066692A1 WO 2009066692 A1 WO2009066692 A1 WO 2009066692A1 JP 2008071018 W JP2008071018 W JP 2008071018W WO 2009066692 A1 WO2009066692 A1 WO 2009066692A1
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WO
WIPO (PCT)
Prior art keywords
power module
substrate
metal plate
producing
ceramic substrate
Prior art date
Application number
PCT/JP2008/071018
Other languages
English (en)
French (fr)
Inventor
Takeshi Kitahara
Yoshiyuki Nagatomo
Toshiyuki Nagase
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Priority to US12/734,646 priority Critical patent/US8116084B2/en
Priority to CN2008801161925A priority patent/CN101861647B/zh
Priority to EP08851237.1A priority patent/EP2214201B1/en
Priority to KR1020107005373A priority patent/KR101083618B1/ko
Publication of WO2009066692A1 publication Critical patent/WO2009066692A1/ja
Priority to HK11101087.9A priority patent/HK1147140A1/xx

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/128—Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)

Abstract

　このパワーモジュール用基板を製造する方法は、セラミックス基板（１１）と純アルミニウムからなる金属板（２２，２３）とを準備し、前記セラミックス基板（１１）と前記金属板（２２，２３）とを、ろう材（２４，２５）を介して積層し、加熱によってろう材（２４，２５）を溶融させて前記セラミックス基板（１１）及び前記金属板（２２，２３）の界面に溶融アルミニウム層（２６，２７）を形成する溶融工程と、冷却によって溶融アルミニウム層（２６，２７）を凝固させ、前記溶融アルミニウム層（２６，２７）を凝固させる際に前記金属板（２２，２３）の結晶方位に揃えて結晶成長させる凝固工程と、を有する。
PCT/JP2008/071018 2007-11-19 2008-11-19 パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール WO2009066692A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/734,646 US8116084B2 (en) 2007-11-19 2008-11-19 Method for manufacturing power module substrate, power module substrate, and power module
CN2008801161925A CN101861647B (zh) 2007-11-19 2008-11-19 电源模块用基板的制造方法、电源模块用基板、和电源模块
EP08851237.1A EP2214201B1 (en) 2007-11-19 2008-11-19 Process for producing substrate for power module, substrate for power module, and power module
KR1020107005373A KR101083618B1 (ko) 2007-11-19 2008-11-19 파워 모듈용 기판의 제조 방법, 파워 모듈용 기판, 및 파워 모듈
HK11101087.9A HK1147140A1 (en) 2007-11-19 2011-02-01 Process for producing substrate for power module, substrate for power module, and power module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007299385 2007-11-19
JP2007-299385 2007-11-19

Publications (1)

Publication Number Publication Date
WO2009066692A1 true WO2009066692A1 (ja) 2009-05-28

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PCT/JP2008/071018 WO2009066692A1 (ja) 2007-11-19 2008-11-19 パワーモジュール用基板の製造方法、パワーモジュール用基板、及びパワーモジュール

Country Status (7)

Country Link
US (1) US8116084B2 (ja)
EP (1) EP2214201B1 (ja)
JP (1) JP4747315B2 (ja)
KR (1) KR101083618B1 (ja)
CN (1) CN101861647B (ja)
HK (1) HK1147140A1 (ja)
WO (1) WO2009066692A1 (ja)

Cited By (3)

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US20150108203A1 (en) * 2011-11-30 2015-04-23 Component Re-Engineering Company, Inc. Low Temperature Method For Hermetically Joining Non-Diffusing Ceramic Materials
US9173329B2 (en) 2012-12-27 2015-10-27 Hyundai Motor Company Heat sink-integrated double-sided cooled power module
EP2492958A4 (en) * 2009-10-22 2018-01-03 Mitsubishi Materials Corporation Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module

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JP5640569B2 (ja) * 2009-09-09 2014-12-17 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5640570B2 (ja) * 2009-09-09 2014-12-17 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
TWI521651B (zh) 2009-09-09 2016-02-11 三菱綜合材料股份有限公司 附散熱器之電力模組用基板之製造方法、附散熱器之電力模組用基板及電力模組
JP5640571B2 (ja) * 2009-09-09 2014-12-17 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP2011119653A (ja) * 2009-09-09 2011-06-16 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板及びパワーモジュール
JP5741793B2 (ja) * 2009-10-22 2015-07-01 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法
JP5724273B2 (ja) * 2009-10-22 2015-05-27 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法
KR101878492B1 (ko) * 2011-02-01 2018-07-13 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판의 제조 방법, 파워 모듈용 기판, 히트싱크가 부착된 파워 모듈용 기판 및 파워 모듈
CN102651349B (zh) * 2011-02-25 2016-07-06 三菱综合材料株式会社 功率模块用基板及制法、自带散热器的该基板及功率模块
CN102651348B (zh) * 2011-02-25 2016-08-03 三菱综合材料株式会社 功率模块用基板及制法、自带散热器的该基板及功率模块
JP5694094B2 (ja) * 2011-09-01 2015-04-01 Jx日鉱日石金属株式会社 フレキシブルプリント配線板用銅箔、銅張積層板、フレキシブルプリント配線板及び電子機器
US9556074B2 (en) * 2011-11-30 2017-01-31 Component Re-Engineering Company, Inc. Method for manufacture of a multi-layer plate device
JP5910166B2 (ja) * 2012-02-29 2016-04-27 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5947104B2 (ja) * 2012-05-18 2016-07-06 昭和電工株式会社 電子素子搭載用基板
WO2014046130A1 (ja) 2012-09-21 2014-03-27 三菱マテリアル株式会社 アルミニウム部材と銅部材との接合構造
EP2911192B1 (en) * 2012-10-16 2021-05-05 Mitsubishi Materials Corporation Substrate for power module with heat sink, power module with heat sink, and method for producing substrate for power module with heat sink
US9064805B1 (en) * 2013-03-13 2015-06-23 Itn Energy Systems, Inc. Hot-press method
JP6079505B2 (ja) * 2013-08-26 2017-02-15 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6264129B2 (ja) * 2014-03-24 2018-01-24 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
US10068829B2 (en) 2014-04-25 2018-09-04 Mitsubishi Materials Corporation Power-module substrate unit and power module
JP6507722B2 (ja) * 2015-03-05 2019-05-08 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
CN108688244A (zh) * 2018-07-25 2018-10-23 青岛归来科技有限公司 陶瓷金属复合板及其制备方法
JP6733941B1 (ja) * 2019-03-22 2020-08-05 大口マテリアル株式会社 半導体素子搭載用基板
CN114501820A (zh) * 2022-02-21 2022-05-13 青州云领电子科技有限公司 一种陶瓷基电路板的制备工艺及产品

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HK1147140A1 (en) 2011-07-29
CN101861647B (zh) 2012-12-05
KR20100093515A (ko) 2010-08-25
EP2214201A1 (en) 2010-08-04
KR101083618B1 (ko) 2011-11-16
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EP2214201A4 (en) 2017-02-01
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