WO2009028627A1 - Ｌｅｄチップの実装方法 - Google Patents

Ｌｅｄチップの実装方法 Download PDF

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Publication number
WO2009028627A1
WO2009028627A1 PCT/JP2008/065452 JP2008065452W WO2009028627A1 WO 2009028627 A1 WO2009028627 A1 WO 2009028627A1 JP 2008065452 W JP2008065452 W JP 2008065452W WO 2009028627 A1 WO2009028627 A1 WO 2009028627A1
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WIPO (PCT)
Prior art keywords
led chip
metal layer
base material
insulating base
mounting
Prior art date
Application number
PCT/JP2008/065452
Other languages
English (en)
French (fr)
Inventor
Youji Urano
Original Assignee
Panasonic Electric Works Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co., Ltd. filed Critical Panasonic Electric Works Co., Ltd.
Priority to US12/733,401 priority Critical patent/US8802460B2/en
Priority to EP08828584.6A priority patent/EP2197046B1/en
Publication of WO2009028627A1 publication Critical patent/WO2009028627A1/ja

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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Led Device Packages (AREA)
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Abstract

　フラックスを用いることなく共晶接合部へのボイドの発生を抑制することが可能なＬＥＤチップの実装方法を提供する。裏面に第１の接続用金属層（例えば、ＡｕＳｎ層）１１を設けたＬＥＤチップ１０と当該ＬＥＤチップ１０を搭載する支持金属層３１を設けた絶縁基材（搭載部材）３０とを共晶接合させるＬＥＤチップ１０の実装方法であって、絶縁基材３０の支持金属層３１の上面に第１の接続用金属層１１と同じ組成の第２の接続用金属層３４を形成した後、絶縁基材３０を支持金属層３１が設けられた面とは反対側から加熱源（ヒータなど）により加熱して第２の接続用金属層３４を溶融させた状態でＬＥＤチップ１０と絶縁基材３０とを近づけて共晶接合させるようにしている。
PCT/JP2008/065452 2007-08-28 2008-08-28 Ｌｅｄチップの実装方法 WO2009028627A1 (ja)

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US12/733,401 US8802460B2 (en) 2007-08-28 2008-08-28 Method of mounting LED chip
EP08828584.6A EP2197046B1 (en) 2007-08-28 2008-08-28 Led chip mounting method

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JP2007-221827 2007-08-28
JP2007221827A JP2009054892A (ja) 2007-08-28 2007-08-28 Ｌｅｄチップの実装方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US9111778B2 (en) * 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
TWI501432B (zh) * 2009-07-17 2015-09-21 Denki Kagaku Kogyo Kk Ｌｅｄ晶片接合體、ｌｅｄ封裝、及ｌｅｄ封裝之製造方法
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
WO2012109225A1 (en) 2011-02-07 2012-08-16 Cree, Inc. Components and methods for light emitting diode (led) lighting
US9380703B2 (en) * 2013-02-20 2016-06-28 Raytheon Company Carrier board for attachment of integrated circuit to circuit board
US10403792B2 (en) 2016-03-07 2019-09-03 Rayvio Corporation Package for ultraviolet emitting devices
US20180006203A1 (en) * 2016-07-01 2018-01-04 Rayvio Corporation Ultraviolet emitting device
CN106935695A (zh) * 2017-05-17 2017-07-07 广东工业大学 一种紫外led器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951108A (ja) * 1995-08-04 1997-02-18 Furukawa Electric Co Ltd:The 光受発光素子モジュール及びその製作方法
JP2003198038A (ja) * 2001-12-28 2003-07-11 Sharp Corp 半導体発光装置、半導体発光装置用マウント部材および半導体発光装置の製造方法
JP2007137744A (ja) * 2005-11-22 2007-06-07 Taiheiyo Material Kk 急硬化材および地盤注入材
JP2007149976A (ja) 2005-11-28 2007-06-14 Stanley Electric Co Ltd 共晶ボンディング発光装置とその製造方法
JP2007528601A (ja) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 信頼性が高く、費用効果があり、熱的に強いＡｕＳｎダイ取付け技術

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789194A (en) 1980-11-21 1982-06-03 Hitachi Ltd System of measuring quantity of processing
JPH02150041A (ja) * 1988-12-01 1990-06-08 Fujitsu Ltd 光半導体ベアチップのダイボンディング方法
JP2825365B2 (ja) * 1991-04-19 1998-11-18 古河電気工業株式会社 Ｌｅｄアレイチップとヒートシンク基板との接合方法
US5234153A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Permanent metallic bonding method
JP3975569B2 (ja) * 1998-09-01 2007-09-12 ソニー株式会社 実装基板及びその製造方法
JP3645765B2 (ja) * 1999-11-12 2005-05-11 シャープ株式会社 はんだ接続部構造、ｂｇａ型半導体パッケージの実装構造およびｂｇａ型半導体パッケージの実装プロセス
JP2002334906A (ja) 2001-05-09 2002-11-22 Matsushita Electric Ind Co Ltd フリップチップの実装方法
US7057294B2 (en) * 2001-07-13 2006-06-06 Rohm Co., Ltd. Semiconductor device
JP2004004195A (ja) * 2002-05-30 2004-01-08 Ricoh Co Ltd 光素子の高精度位置合わせ方法、高精度位置合わせ装置、及び光伝送用モジュール
JP2005117020A (ja) * 2003-09-16 2005-04-28 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体素子とその製造方法
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
US7405093B2 (en) * 2004-08-18 2008-07-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
JP4814503B2 (ja) * 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
JP4891556B2 (ja) * 2005-03-24 2012-03-07 株式会社東芝 半導体装置の製造方法
JP2007134744A (ja) * 2007-02-14 2007-05-31 Sumitomo Electric Ind Ltd サブマウントおよび半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951108A (ja) * 1995-08-04 1997-02-18 Furukawa Electric Co Ltd:The 光受発光素子モジュール及びその製作方法
JP2003198038A (ja) * 2001-12-28 2003-07-11 Sharp Corp 半導体発光装置、半導体発光装置用マウント部材および半導体発光装置の製造方法
JP2007528601A (ja) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 信頼性が高く、費用効果があり、熱的に強いＡｕＳｎダイ取付け技術
JP2007137744A (ja) * 2005-11-22 2007-06-07 Taiheiyo Material Kk 急硬化材および地盤注入材
JP2007149976A (ja) 2005-11-28 2007-06-14 Stanley Electric Co Ltd 共晶ボンディング発光装置とその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2197046A4

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EP2197046A1 (en) 2010-06-16
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US20100210048A1 (en) 2010-08-19
US8802460B2 (en) 2014-08-12
EP2197046B1 (en) 2016-12-21

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