WO2009060670A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2009060670A1
WO2009060670A1 PCT/JP2008/067009 JP2008067009W WO2009060670A1 WO 2009060670 A1 WO2009060670 A1 WO 2009060670A1 JP 2008067009 W JP2008067009 W JP 2008067009W WO 2009060670 A1 WO2009060670 A1 WO 2009060670A1
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WO
WIPO (PCT)
Prior art keywords
section
semiconductor device
extending
insulating film
interlayer insulating
Prior art date
Application number
PCT/JP2008/067009
Other languages
English (en)
French (fr)
Inventor
Katsuyuki Torii
Arata Shiomi
Original Assignee
Sanken Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007291892A external-priority patent/JP4293272B2/ja
Priority claimed from JP2007328672A external-priority patent/JP5098630B2/ja
Application filed by Sanken Electric Co., Ltd. filed Critical Sanken Electric Co., Ltd.
Priority to EP08847499.4A priority Critical patent/EP2209142B1/en
Priority to US12/682,383 priority patent/US8207612B2/en
Priority to CN2008801110162A priority patent/CN101821853B/zh
Publication of WO2009060670A1 publication Critical patent/WO2009060670A1/ja

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Abstract

　ボンディング強度を確保しつつ、ボンディングに伴う層間絶縁膜（１２）の破壊や電極（１３）の破壊を防止することができ、電気的特性を向上することができる半導体装置及びその製造方法を提供する。半導体装置に搭載された半導体素子（１）は、ゲート電極（１１６）上を覆い第１の方向に延伸する延伸部（１２１）、第２の方向に隣接する延伸部（１２１）同士を第１の方向に一定間隔において連結する連結部（１２２）及び延伸部（１２１）と連結部（１２２）とにより開口形状が規定されベース領域（１１２）の主面とエミッタ領域（１１３）の主面とを露出する開口部（１２３）を有する層間絶縁膜（１２）を備える。また、層間絶縁膜（１２）の延伸部（１２１）下におけるエミッタ領域（１１３）の第２の方向の第１の幅寸法（１２１Ｗ）に比べて、連結部（１２２）下の第１の方向における第２の幅寸法（１２２Ｗ）が大きく設定されている。
PCT/JP2008/067009 2007-11-09 2008-09-19 半導体装置及びその製造方法 WO2009060670A1 (ja)

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EP08847499.4A EP2209142B1 (en) 2007-11-09 2008-09-19 Semiconductor device and manufacturing method thereof
US12/682,383 US8207612B2 (en) 2007-11-09 2008-09-19 Semiconductor device and manufacturing method thereof
CN2008801110162A CN101821853B (zh) 2007-11-09 2008-09-19 半导体器件及其制造方法

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JP2007291892A JP4293272B2 (ja) 2007-11-09 2007-11-09 半導体装置
JP2007-291892 2007-11-09
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JP2007328672A JP5098630B2 (ja) 2007-12-20 2007-12-20 半導体装置及びその製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020533793A (ja) * 2017-09-11 2020-11-19 ゼネラル・エレクトリック・カンパニイ 半導体素子上に金属層を形成するためのスパッタリングシステムおよび方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102414825B (zh) * 2009-04-28 2014-12-24 三菱电机株式会社 功率用半导体装置
JP6099302B2 (ja) * 2011-10-28 2017-03-22 富士電機株式会社 半導体装置の製造方法
WO2013067270A1 (en) * 2011-11-04 2013-05-10 Invensas Corporation Bonding wedge
CN103151251B (zh) * 2011-12-07 2016-06-01 无锡华润华晶微电子有限公司 沟槽型绝缘栅双极型晶体管及其制备方法
WO2013124989A1 (ja) * 2012-02-22 2013-08-29 三菱電機株式会社 半導体装置
CN104124271B (zh) * 2013-04-28 2017-09-12 三垦电气株式会社 半导体装置
JP5729497B1 (ja) 2014-02-04 2015-06-03 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
DE102014107387A1 (de) * 2014-05-26 2015-11-26 Infineon Technologies Ag Halbleiterchip mit verbesserter bondbarkeit und verfahren zur herstellung einer bondverbindung
US9722059B2 (en) * 2015-08-21 2017-08-01 Infineon Technologies Ag Latch-up free power transistor
DE102016116273A1 (de) 2016-08-31 2018-03-01 Infineon Technologies Austria Ag Halbleiterbauelemente und Verfahren zum Bilden von Halbleiterbauelementen
CN110100314B (zh) * 2017-06-09 2022-08-09 富士电机株式会社 半导体装置及半导体装置的制造方法
CN110383489B (zh) 2017-09-05 2023-07-04 富士电机株式会社 碳化硅半导体装置及碳化硅半导体装置的制造方法
JP7106981B2 (ja) * 2018-05-18 2022-07-27 富士電機株式会社 逆導通型半導体装置
JP7246287B2 (ja) * 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
EP3907758A1 (en) * 2020-05-08 2021-11-10 Infineon Technologies AG Semiconductor die, semiconductor switching assembly and method of manufacturing
JP2023011445A (ja) * 2021-07-12 2023-01-24 ルネサスエレクトロニクス株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022322A (ja) * 1996-06-28 1998-01-23 Denso Corp 半導体装置
JP2005303218A (ja) * 2004-04-16 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
JP2006140263A (ja) * 2004-11-11 2006-06-01 Sanken Electric Co Ltd 半導体素子及び半導体素子の製造方法
JP2007165635A (ja) * 2005-12-14 2007-06-28 Sanken Electric Co Ltd トレンチ構造半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
US6472678B1 (en) * 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
JP4221904B2 (ja) 2001-01-29 2009-02-12 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022322A (ja) * 1996-06-28 1998-01-23 Denso Corp 半導体装置
JP2005303218A (ja) * 2004-04-16 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
JP2006140263A (ja) * 2004-11-11 2006-06-01 Sanken Electric Co Ltd 半導体素子及び半導体素子の製造方法
JP2007165635A (ja) * 2005-12-14 2007-06-28 Sanken Electric Co Ltd トレンチ構造半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2209142A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020533793A (ja) * 2017-09-11 2020-11-19 ゼネラル・エレクトリック・カンパニイ 半導体素子上に金属層を形成するためのスパッタリングシステムおよび方法
JP7262448B2 (ja) 2017-09-11 2023-04-21 ゼネラル・エレクトリック・カンパニイ 半導体素子上に金属層を形成するためのスパッタリングシステムおよび方法

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