WO2009057194A1 - 半導体構造及び当該半導体構造の製造方法 - Google Patents

半導体構造及び当該半導体構造の製造方法 Download PDF

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Publication number
WO2009057194A1
WO2009057194A1 PCT/JP2007/071052 JP2007071052W WO2009057194A1 WO 2009057194 A1 WO2009057194 A1 WO 2009057194A1 JP 2007071052 W JP2007071052 W JP 2007071052W WO 2009057194 A1 WO2009057194 A1 WO 2009057194A1
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WIPO (PCT)
Prior art keywords
planar
semiconductor structure
realized
design
sgt
Prior art date
Application number
PCT/JP2007/071052
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English (en)
French (fr)
Inventor
Fujio Masuoka
Keon Jae Lee
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Unisantis Electronics (Japan) Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics (Japan) Ltd. filed Critical Unisantis Electronics (Japan) Ltd.
Priority to PCT/JP2007/071052 priority Critical patent/WO2009057194A1/ja
Priority to JP2009538870A priority patent/JP5204121B2/ja
Publication of WO2009057194A1 publication Critical patent/WO2009057194A1/ja
Priority to US12/704,975 priority patent/US8183628B2/en
Priority to US13/412,959 priority patent/US8482041B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　本発明は、電界効果トランジスタ（ＦＥＴ）の設計及び製造における従来のプレーナ型ＣＭＯＳ技術とは対照的に、複雑なデバイス工程を必要とせずに、従来と同様の基板上にＦＥＴのチャネル及びピラーの形状に種々の結晶面を利用して形成されるＣＭＯＳ ＳＧＴを提供する。さらに本発明では、プレーナ型ＦＥＴの面方位を変化させる設計とは異なり、ＳＧＴの面方位を変化させることにより移動度の向上が実現される。よって、同一基板上で種々の結晶面を有する複数のＳＧＴを形成することによって、複数の異なるキャリア移動度が実現され、これにより所望の性能を得ることができる。
PCT/JP2007/071052 2007-10-29 2007-10-29 半導体構造及び当該半導体構造の製造方法 WO2009057194A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/071052 WO2009057194A1 (ja) 2007-10-29 2007-10-29 半導体構造及び当該半導体構造の製造方法
JP2009538870A JP5204121B2 (ja) 2007-10-29 2007-10-29 半導体構造及び当該半導体構造の製造方法
US12/704,975 US8183628B2 (en) 2007-10-29 2010-02-12 Semiconductor structure and method of fabricating the semiconductor structure
US13/412,959 US8482041B2 (en) 2007-10-29 2012-03-06 Semiconductor structure and method of fabricating the semiconductor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/071052 WO2009057194A1 (ja) 2007-10-29 2007-10-29 半導体構造及び当該半導体構造の製造方法

Related Child Applications (1)

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US12/704,975 Continuation US8183628B2 (en) 2007-10-29 2010-02-12 Semiconductor structure and method of fabricating the semiconductor structure

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WO2009057194A1 true WO2009057194A1 (ja) 2009-05-07

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WO (1) WO2009057194A1 (ja)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061181A (ja) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
JP2011066105A (ja) * 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体装置
JP2011077437A (ja) * 2009-10-01 2011-04-14 Unisantis Electronics Japan Ltd 半導体装置
JP2011086900A (ja) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd 半導体装置
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP2013012765A (ja) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd 半導体装置
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8557619B2 (en) 2009-08-07 2013-10-15 Siltron Inc. Light emitting diode display and method of manufacturing the same
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8980673B2 (en) 2009-09-17 2015-03-17 Lg Siltron Incorporated Solar cell and method of manufacturing the same
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
JP2016129247A (ja) * 2016-03-02 2016-07-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP2016174177A (ja) * 2016-06-01 2016-09-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
KR101761065B1 (ko) 2013-09-19 2017-07-24 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 반도체 디바이스를 형성하는 방법
US9837503B2 (en) 2013-01-25 2017-12-05 Unisantis Electronics Singapore Pte. Ltd. Transistor having metal electrodes surrounding a semiconductor pillar body and corresponding work-function-induced source/drain regions

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US9450026B2 (en) 2014-03-24 2016-09-20 Kabushiki Kaisha Toshiba Semiconductor device

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Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8642426B2 (en) 2009-03-25 2014-02-04 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US8557619B2 (en) 2009-08-07 2013-10-15 Siltron Inc. Light emitting diode display and method of manufacturing the same
JP2011061181A (ja) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
US9059309B2 (en) 2009-08-11 2015-06-16 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8558317B2 (en) 2009-08-11 2013-10-15 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US9484268B2 (en) 2009-08-11 2016-11-01 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
EP2284878A3 (en) * 2009-08-11 2013-07-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and production method
US8441066B2 (en) 2009-09-16 2013-05-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2011086900A (ja) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd 半導体装置
JP2011066105A (ja) * 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd 半導体装置
US8980673B2 (en) 2009-09-17 2015-03-17 Lg Siltron Incorporated Solar cell and method of manufacturing the same
EP2306507A3 (en) * 2009-10-01 2012-06-13 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
JP2011077437A (ja) * 2009-10-01 2011-04-14 Unisantis Electronics Japan Ltd 半導体装置
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
JP2013012765A (ja) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd 半導体装置
US9837503B2 (en) 2013-01-25 2017-12-05 Unisantis Electronics Singapore Pte. Ltd. Transistor having metal electrodes surrounding a semiconductor pillar body and corresponding work-function-induced source/drain regions
KR101761065B1 (ko) 2013-09-19 2017-07-24 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 반도체 디바이스를 형성하는 방법
US10026826B2 (en) 2013-09-19 2018-07-17 Taiwan Semiconductor Manufacturing Company Limited Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
US10734503B2 (en) 2013-09-19 2020-08-04 Taiwan Semiconductor Manufacturing Company Limited Asymmetric semiconductor device
JP2016129247A (ja) * 2016-03-02 2016-07-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP2016174177A (ja) * 2016-06-01 2016-09-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置

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