WO2009050264A1 - Verfahren und vorrichtung zur herstellung von silizium - Google Patents
Verfahren und vorrichtung zur herstellung von silizium Download PDFInfo
- Publication number
- WO2009050264A1 WO2009050264A1 PCT/EP2008/064034 EP2008064034W WO2009050264A1 WO 2009050264 A1 WO2009050264 A1 WO 2009050264A1 EP 2008064034 W EP2008064034 W EP 2008064034W WO 2009050264 A1 WO2009050264 A1 WO 2009050264A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reducing agent
- silicon
- starting material
- container
- thermal reduction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/126—Microwaves
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
Definitions
- the present invention relates to a method for producing silicon, in particular high-purity silicon, as required for the production of semiconductors and solar cells, and a device therefor.
- silicon is required, whose degree of contamination is extremely low or precisely controlled.
- the manufacturing process should be inexpensive.
- metallurgical silicon is used as starting material, which is obtained from quartz sand in a blast furnace process.
- the metallurgical silicon is then converted to polycrystalline ultrapure silicon via a multistage trichlorosilane-based process.
- the metallurgical silicon is reacted with silicon tetrachloride and hydrogen to trichlorosilane and recovered from the trichlorosilane by disproportionation of silane tetrachloride and silane. From the silane formed is then obtained by thermal decomposition of silicon rods ultrapure silicon.
- silicon is made of quartz or quartz glass
- Electrodes by the reducing agent, such as carbon There was therefore a need for a method whereby silicon can be conveniently obtained from a readily available raw material in a simple manner and energy.
- the inventive method is based on the second approach, which is based on the reductive recovery of silicon.
- a process for producing silicon by reductively reacting a silica-based raw material with a reducing agent, wherein the silica-based raw material is reacted with the reducing agent in a microwave oven.
- the silicon dioxide-based starting material used according to the invention may be quartz sand, quartz or glass.
- the glass may be quartz glass, ie a glass of 100% SiO 2 , or quartz glass, to which suitable doping elements have been added as required.
- a starting material is used whose composition corresponds to the requirements of the later application, for example with respect to the type and amount of the doping elements. As a result, the expense of possibly required purification of the resulting silicon can be avoided or at least reduced.
- the silica-based starting material is comminuted and used, for example, in powder form.
- a suitable powdery starting material is, for example, quartz flour.
- a reducing agent for the reduction, a reducing agent can be used, as it is known for the production of silicon by thermal reduction.
- carbon-based reducing agents such as carbon powder, graphite powder or a mixture of carbon powder and graphite powder, or aluminum, magnesium, etc.
- the reduction preferably takes place carbothermally, that is to say with carbon-based reducing agents.
- Heating in a microwave oven is done by exciting the material to be heated with electromagnetic radiation.
- the reaction mixture of starting material and reducing agent is placed in a suitable reaction vessel.
- This reaction container may be made of a material that is transparent to the operating frequency of the microwave oven used.
- a container which consists of a material which is not or only partially transparent to the operating frequency of the microwave oven used.
- the container is also heated, so that the heating and the melting by heat conduction from the container material is supported in the mixture to be reacted.
- the container material is therefore not critical, as long as it is transparent to the microwaves or by heat conduction allows the necessary heating of the mixture to be reacted.
- microwave ovens can be used for the method according to the invention, which work with a frequency, as used for domestic microwave ovens.
- These use electromagnetic radiation with a frequency of typically around 2.455 GHz.
- microwave ovens which have a power control, in particular a continuous power control, so that, for example, the irradiation of the microwaves can be adjusted and regulated as required.
- the use of power controlled microwave ovens is another contribution to energy saving.
- the silica-based starting material is ground to a small size and mixed with the reducing agent.
- the resulting mixture is placed in a container and the silica-based starting material is heated and melted by the action of the microwaves, the reduction being carried out by the reducing agent.
- the reaction is preferably carried out under an inert gas atmosphere, for example nitrogen or argon or vacuum, in order to avoid a possible reaction of the silicon formed with atmospheric oxygen.
- an inert gas atmosphere for example nitrogen or argon or vacuum
- the direction of irradiation of the electromagnetic radiation can in principle be chosen arbitrarily, as long as sufficient heating of the starting material takes place up to the melt.
- the attached figure shows schematically a device for a preferred embodiment according to the invention, the device also forming an object of the invention.
- the thermal reduction of the starting material may be carried out in connection with a purification according to the principle of the zone melting process.
- Zone melting can be performed horizontally or vertically.
- the reaction product which consists essentially of silicon
- Silicon itself can not be directly excited by microwaves and thus heated.
- a container made of a material which is excited and heated by the frequency of the electromagnetic radiation of the microwave oven used is used. The heating and the melting of the silicon takes place here by conduction of heat from the container wall into the silicon.
- the container material is therefore to be tuned with regard to the operating frequency of the microwave oven used.
- suitable container materials for commercial microwave ovens are graphite, silicon carbide, etc. These materials show when excited with electromagnetic radiation of about 2.455 GHz of commercial microwave ovens a high energy consumption, and thus a corresponding heating of the silicon.
- the region of the radiation or heat input and thus the melt front can be vertical, that is perpendicular to the surface of the reaction product obtained, or horizontally, that is parallel to the surface of the resulting reaction product, are performed.
- the corresponding microwave sources or the container 2 or both, the container 2 and the microwave sources can be designed to be movable.
- the microwave sources are positioned so that the field maxima of the irradiated microwaves are generated in the regions of the reaction product to be heated.
- the container 2 is designed to be movable both in the vertical and in the horizontal direction.
- an arrangement for a method according to the invention with a vertical zone melting process is shown by way of example.
- the container 2 with the reaction product is exposed to the side of the electromagnetic radiation.
- the direction of movement of the radiation front 4 or the container 2 for the zone melting process is shown schematically by arrows.
- quartz glass which is appropriately doped, if necessary, is ground, mixed with the likewise finely ground reducing agent and placed in a container.
- the container can be placed in a commercial microwave and there by irradiation, the starting material is melted and reacted with the reducing agent to silicon.
- a plurality of preferably movably arranged containers can be introduced simultaneously into the microwave oven.
- Preferably is preheated to a temperature in a range of 500 0 C.
- the preheating is preferably done within the microwave to avoid possible burning of the reducing agent.
- the energy input required for the thermal reduction can be reduced.
- a heater other than the microwave source may be provided in the microwave oven.
- a conventional and known heating device may be provided in the microwave oven.
- Particularly suitable is an induction heater.
- the starting materials and products should be kept under inert gas until they cool to room temperature.
- Microwave oven Container for holding the starting material and reducing agent Radiation source for melting Radiation front for zone melting Movement direction of the vessel and / or the radiation front for zone melting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010529396A JP5383688B2 (ja) | 2007-10-17 | 2008-10-17 | ケイ素を製造する方法及び装置 |
CA2703040A CA2703040A1 (en) | 2007-10-17 | 2008-10-17 | Method and device for producing silicon |
EP08840408A EP2203248A1 (de) | 2007-10-17 | 2008-10-17 | Verfahren und vorrichtung zur herstellung von silizium |
US12/682,917 US20100284887A1 (en) | 2007-10-17 | 2008-10-17 | Method and device for producing silicon |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007050010.8 | 2007-10-17 | ||
DE102007050010A DE102007050010A1 (de) | 2007-10-17 | 2007-10-17 | Verfahren und Vorrichtung zur Herstellung von Silizium |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009050264A1 true WO2009050264A1 (de) | 2009-04-23 |
Family
ID=40158588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/064034 WO2009050264A1 (de) | 2007-10-17 | 2008-10-17 | Verfahren und vorrichtung zur herstellung von silizium |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100284887A1 (de) |
EP (1) | EP2203248A1 (de) |
JP (1) | JP5383688B2 (de) |
CA (1) | CA2703040A1 (de) |
DE (1) | DE102007050010A1 (de) |
WO (1) | WO2009050264A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101220876B1 (ko) | 2010-11-08 | 2013-01-11 | 임종문 | 규사를 이용한 메탈 실리콘의 연속제조장치 및 방법 |
EP2684846A3 (de) * | 2012-07-11 | 2016-08-10 | Shimizu Densetsu Kogyo Co., Ltd. | Verfahren zur Herstellung von Silizium mithilfe von Mikrowellen und Mikrowellenreduktionsofen |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012003920A1 (de) | 2012-02-28 | 2013-08-29 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren und vorrichtung zur gewinnung von silicium |
US9802827B2 (en) | 2015-10-09 | 2017-10-31 | Milwaukee Silicon, Llc | Purified silicon, devices and systems for producing same |
US9938153B2 (en) * | 2016-04-06 | 2018-04-10 | Indian Institute Of Technology Bombay | Method of preparing silicon from sand |
JP6502400B2 (ja) * | 2017-02-08 | 2019-04-17 | オリコン株式会社 | マイクロ波を利用したフッ化スカンジウムの還元方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3241366A1 (de) | 1982-11-09 | 1984-05-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere solarzellen, verwendbarem silicium |
EP0347193A1 (de) | 1988-06-14 | 1989-12-20 | Sharp Kabushiki Kaisha | Wärmeerzeugendes Gefäss für Mikrowellenherd |
EP0682462A2 (de) | 1994-05-12 | 1995-11-15 | Samsung Electronics Co., Ltd. | Vorrichtung zur lageregelung eines Heizelementes in einem Mikrowellenofen |
DE19859288A1 (de) * | 1998-12-22 | 2000-06-29 | Bayer Ag | Agglomeration von Siliciumpulvern |
EP1441567A2 (de) | 2003-01-23 | 2004-07-28 | Lg Electronics Inc. | Elektrischer Ofen |
JP2006275351A (ja) | 2005-03-28 | 2006-10-12 | National Institute Of Advanced Industrial & Technology | ガス加熱装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4190757A (en) * | 1976-10-08 | 1980-02-26 | The Pillsbury Company | Microwave heating package and method |
JPS6379717A (ja) * | 1986-09-24 | 1988-04-09 | Kawasaki Steel Corp | 金属珪素の製造方法およびその装置 |
JPS63285121A (ja) * | 1987-05-18 | 1988-11-22 | Power Reactor & Nuclear Fuel Dev Corp | マイクロ波加熱焙焼・還元装置 |
GB2227397B (en) * | 1989-01-18 | 1993-10-20 | Cem Corp | Microwave ashing and analytical apparatuses, components and processes |
IS3679A7 (is) * | 1990-03-05 | 1991-09-06 | Comalco Aluminium Limited | Háhitabræðsluofn |
JP3295673B2 (ja) * | 1993-03-26 | 2002-06-24 | 同和鉄粉工業株式会社 | マイクロ波利用の鉄粉製造法 |
CA2232777C (en) * | 1997-03-24 | 2001-05-15 | Hiroyuki Baba | Method for producing silicon for use in solar cells |
US6432830B1 (en) * | 1998-05-15 | 2002-08-13 | Applied Materials, Inc. | Semiconductor fabrication process |
WO2004101434A1 (en) * | 2003-05-15 | 2004-11-25 | Helmut Engel | The metallurgical method of receiving the high purity silicon powder by chemical processing |
NO20061105L (no) * | 2006-03-07 | 2007-09-10 | Kopperaa Miljoinvest As | Fremstilling av rent silisium metall og amorf silika ved reduksjon av kvarts (Sio2) |
CN1935648B (zh) * | 2006-09-14 | 2010-05-12 | 华南理工大学 | 一种用稻壳制备太阳能电池用多晶硅的方法 |
-
2007
- 2007-10-17 DE DE102007050010A patent/DE102007050010A1/de not_active Ceased
-
2008
- 2008-10-17 JP JP2010529396A patent/JP5383688B2/ja not_active Expired - Fee Related
- 2008-10-17 EP EP08840408A patent/EP2203248A1/de not_active Withdrawn
- 2008-10-17 WO PCT/EP2008/064034 patent/WO2009050264A1/de active Application Filing
- 2008-10-17 CA CA2703040A patent/CA2703040A1/en not_active Abandoned
- 2008-10-17 US US12/682,917 patent/US20100284887A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3241366A1 (de) | 1982-11-09 | 1984-05-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere solarzellen, verwendbarem silicium |
EP0347193A1 (de) | 1988-06-14 | 1989-12-20 | Sharp Kabushiki Kaisha | Wärmeerzeugendes Gefäss für Mikrowellenherd |
EP0682462A2 (de) | 1994-05-12 | 1995-11-15 | Samsung Electronics Co., Ltd. | Vorrichtung zur lageregelung eines Heizelementes in einem Mikrowellenofen |
DE19859288A1 (de) * | 1998-12-22 | 2000-06-29 | Bayer Ag | Agglomeration von Siliciumpulvern |
EP1441567A2 (de) | 2003-01-23 | 2004-07-28 | Lg Electronics Inc. | Elektrischer Ofen |
JP2006275351A (ja) | 2005-03-28 | 2006-10-12 | National Institute Of Advanced Industrial & Technology | ガス加熱装置 |
Non-Patent Citations (3)
Title |
---|
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; YOSHIKAWA, TAKESHI ET AL: "Carbothermic reduction of MgO by microwave irradiation", XP002509739, retrieved from STN Database accession no. 2003:474650 * |
MATERIALS TRANSACTIONS , 44(4), 722-726 CODEN: MTARCE; ISSN: 1345-9678, 2003 * |
See also references of EP2203248A1 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101220876B1 (ko) | 2010-11-08 | 2013-01-11 | 임종문 | 규사를 이용한 메탈 실리콘의 연속제조장치 및 방법 |
EP2684846A3 (de) * | 2012-07-11 | 2016-08-10 | Shimizu Densetsu Kogyo Co., Ltd. | Verfahren zur Herstellung von Silizium mithilfe von Mikrowellen und Mikrowellenreduktionsofen |
US9550681B2 (en) | 2012-07-11 | 2017-01-24 | Kazuhiro Nagata | Method for producing silicon using microwave, and microwave reduction furnace |
Also Published As
Publication number | Publication date |
---|---|
CA2703040A1 (en) | 2009-04-23 |
JP5383688B2 (ja) | 2014-01-08 |
US20100284887A1 (en) | 2010-11-11 |
DE102007050010A1 (de) | 2009-06-25 |
EP2203248A1 (de) | 2010-07-07 |
JP2011500495A (ja) | 2011-01-06 |
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