WO2009044742A1 - レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤 - Google Patents

レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤 Download PDF

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Publication number
WO2009044742A1
WO2009044742A1 PCT/JP2008/067758 JP2008067758W WO2009044742A1 WO 2009044742 A1 WO2009044742 A1 WO 2009044742A1 JP 2008067758 W JP2008067758 W JP 2008067758W WO 2009044742 A1 WO2009044742 A1 WO 2009044742A1
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WO
WIPO (PCT)
Prior art keywords
composition
underlayer film
resist underlayer
forming resist
additive
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PCT/JP2008/067758
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English (en)
French (fr)
Inventor
Makoto Nakajima
Hideo Suzuki
Original Assignee
Nissan Chemical Industries, Ltd.
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Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to US12/678,311 priority Critical patent/US20100210765A1/en
Priority to CN200880107299A priority patent/CN101802713A/zh
Priority to JP2009536058A priority patent/JP5099381B2/ja
Publication of WO2009044742A1 publication Critical patent/WO2009044742A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

【課題】 　上層のレジストとの密着性が向上し、レジストパターンの倒壊が抑制されるレジスト下層膜を形成するための組成物を提供する。 【解決手段】 　珪素原子を主鎖に有する重合体、多環構造の化合物及び有機溶媒を含むリソグラフィー用レジスト下層膜形成組成物であって、前記多環構造の化合物は、少なくとも２つのカルボキシル基を置換基として有し、該２つのカルボキシル基は、多環構造を形成する隣接する２つの炭素原子にそれぞれ結合し、かつ、該２つのカルボキシル基の立体配置が、いずれもエンド配置若しくはエキソ配置であるか、又はシス配置であるところの、リソグラフィー用レジスト下層膜形成組成物である。
PCT/JP2008/067758 2007-10-01 2008-09-30 レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤 WO2009044742A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/678,311 US20100210765A1 (en) 2007-10-01 2008-09-30 Resist underlayer film-forming composition, production method of semiconductor device using the same, and additive for resist underlayer film-forming composition
CN200880107299A CN101802713A (zh) 2007-10-01 2008-09-30 形成抗蚀剂下层膜的组合物、使用该组合物的半导体装置的制造方法以及形成抗蚀剂下层膜的组合物用添加剂
JP2009536058A JP5099381B2 (ja) 2007-10-01 2008-09-30 レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-257719 2007-10-01
JP2007257719 2007-10-01

Publications (1)

Publication Number Publication Date
WO2009044742A1 true WO2009044742A1 (ja) 2009-04-09

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PCT/JP2008/067758 WO2009044742A1 (ja) 2007-10-01 2008-09-30 レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤

Country Status (6)

Country Link
US (1) US20100210765A1 (ja)
JP (1) JP5099381B2 (ja)
KR (1) KR20100082844A (ja)
CN (1) CN101802713A (ja)
TW (1) TW200933301A (ja)
WO (1) WO2009044742A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016009965A1 (ja) * 2014-07-15 2016-01-21 日産化学工業株式会社 脂肪族多環構造含有有機基を有するシリコン含有レジスト下層膜形成組成物

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9068086B2 (en) 2011-12-21 2015-06-30 Dow Global Technologies Llc Compositions for antireflective coatings
TWI602027B (zh) * 2012-02-09 2017-10-11 日產化學工業股份有限公司 光阻下層膜形成組成物
CN105492973B (zh) * 2013-08-28 2019-06-11 日产化学工业株式会社 应用了抗蚀剂下层膜的图案形成方法
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JP6297992B2 (ja) * 2015-02-05 2018-03-20 信越化学工業株式会社 ケイ素含有重合体、ケイ素含有化合物、レジスト下層膜形成用組成物、及びパターン形成方法
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KR102349937B1 (ko) 2017-03-27 2022-01-10 동우 화인켐 주식회사 하드마스크용 조성물
KR102285024B1 (ko) 2017-06-27 2021-08-03 동우 화인켐 주식회사 하드마스크용 조성물
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KR102383692B1 (ko) * 2017-06-30 2022-04-05 동우 화인켐 주식회사 하드마스크용 조성물
KR102402748B1 (ko) 2017-11-10 2022-05-26 동우 화인켐 주식회사 하드마스크용 조성물
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KR20240044240A (ko) 2022-09-28 2024-04-04 동우 화인켐 주식회사 하드마스크용 조성물
KR20240044241A (ko) 2022-09-28 2024-04-04 동우 화인켐 주식회사 하드마스크용 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215709A (ja) * 2000-02-07 2001-08-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005221534A (ja) * 2004-02-03 2005-08-18 Shin Etsu Chem Co Ltd 珪素含有レジスト下層膜材料及びパターン形成方法
JP2005338380A (ja) * 2004-05-26 2005-12-08 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、該反射防止膜形成用組成物からなる反射防止膜、および該反射防止膜形成用組成物を用いたレジストパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271061A (en) * 1979-03-06 1981-06-02 Nitto Electric Industrial Co., Ltd. Epoxy resin compositions for sealing semiconductors
JP2001213871A (ja) * 2000-01-28 2001-08-07 Nissan Chem Ind Ltd 脂環式エポキシ化合物の製造法
JP4348537B2 (ja) * 2004-04-22 2009-10-21 日産化学工業株式会社 脂環式硬化性樹脂
JP5000250B2 (ja) * 2006-09-29 2012-08-15 東京応化工業株式会社 パターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215709A (ja) * 2000-02-07 2001-08-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005221534A (ja) * 2004-02-03 2005-08-18 Shin Etsu Chem Co Ltd 珪素含有レジスト下層膜材料及びパターン形成方法
JP2005338380A (ja) * 2004-05-26 2005-12-08 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、該反射防止膜形成用組成物からなる反射防止膜、および該反射防止膜形成用組成物を用いたレジストパターン形成方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016009965A1 (ja) * 2014-07-15 2016-01-21 日産化学工業株式会社 脂肪族多環構造含有有機基を有するシリコン含有レジスト下層膜形成組成物
KR20170031086A (ko) * 2014-07-15 2017-03-20 닛산 가가쿠 고교 가부시키 가이샤 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
JPWO2016009965A1 (ja) * 2014-07-15 2017-04-27 日産化学工業株式会社 脂肪族多環構造含有有機基を有するシリコン含有レジスト下層膜形成組成物
US10082735B2 (en) 2014-07-15 2018-09-25 Nissan Chemical Industries, Ltd. Silicon-containing resist underlayer film-forming composition having organic group having aliphatic polycyclic structure
JP2020076999A (ja) * 2014-07-15 2020-05-21 日産化学株式会社 脂肪族多環構造含有有機基を有するシリコン含有レジスト下層膜形成組成物
CN112558410A (zh) * 2014-07-15 2021-03-26 日产化学工业株式会社 具有含脂肪族多环结构的有机基团的含硅抗蚀剂下层膜形成用组合物
KR20210152018A (ko) * 2014-07-15 2021-12-14 닛산 가가쿠 가부시키가이샤 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
KR102382708B1 (ko) 2014-07-15 2022-04-08 닛산 가가쿠 가부시키가이샤 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
KR102398792B1 (ko) 2014-07-15 2022-05-17 닛산 가가쿠 가부시키가이샤 지방족 다환구조 함유 유기기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물

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US20100210765A1 (en) 2010-08-19
KR20100082844A (ko) 2010-07-20
JPWO2009044742A1 (ja) 2011-02-10
CN101802713A (zh) 2010-08-11
TW200933301A (en) 2009-08-01
JP5099381B2 (ja) 2012-12-19

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