WO2009028511A1 - リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法 - Google Patents

リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法 Download PDF

Info

Publication number
WO2009028511A1
WO2009028511A1 PCT/JP2008/065213 JP2008065213W WO2009028511A1 WO 2009028511 A1 WO2009028511 A1 WO 2009028511A1 JP 2008065213 W JP2008065213 W JP 2008065213W WO 2009028511 A1 WO2009028511 A1 WO 2009028511A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
lower layer
layer film
resist lower
film formation
Prior art date
Application number
PCT/JP2008/065213
Other languages
English (en)
French (fr)
Inventor
Hikaru Imamura
Yasushi Sakaida
Makoto Nakajima
Satoshi Takei
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to US12/673,926 priority Critical patent/US8283103B2/en
Priority to JP2009530130A priority patent/JP5158382B2/ja
Priority to CN2008801046861A priority patent/CN101790704B/zh
Publication of WO2009028511A1 publication Critical patent/WO2009028511A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

【課題】 　均一に塗布することができ、熱硬化時に昇華物の発生が抑制される、レジスト下層膜形成組成物を得ることを目的とする。更に、上層のレジストに対するドライエッチングの選択比が大きいレジスト下層膜を形成するための組成物を得ることを目的とする。 【解決手段】 　下記式（１） 【化１】 [式中、 　Ｒ1及びＲ2は、互いに独立して、－Ｘ－Ｙ［式中、Ｘは、酸素原子、炭素原子数１ないし１８のアルキレン基又は－ＯＣnＨ2n－（式中、ｎは１ないし１８の整数を表す。）で表される基を表し、Ｙは、ラクトン環又はアダマンタン環を表す。］で表される基を表すか、又は、 　Ｒ1及びＲ2の一方は前記－Ｘ－Ｙで表される基を表し、他方はアリール基、メチル基、エチル基又は炭素原子数３ないし６の環状アルキル基を表す。]で表される単位構造を有するポリシラン化合物、及び有機溶媒を含むリソグラフィー用レジスト下層膜形成組成物。
PCT/JP2008/065213 2007-08-27 2008-08-26 リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法 WO2009028511A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/673,926 US8283103B2 (en) 2007-08-27 2008-08-26 Composition for forming resist underlayer film for lithography and production method of semiconductor device
JP2009530130A JP5158382B2 (ja) 2007-08-27 2008-08-26 リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法
CN2008801046861A CN101790704B (zh) 2007-08-27 2008-08-26 光刻用形成抗蚀剂下层膜的组合物和半导体装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-220325 2007-08-27
JP2007220325 2007-08-27

Publications (1)

Publication Number Publication Date
WO2009028511A1 true WO2009028511A1 (ja) 2009-03-05

Family

ID=40387230

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065213 WO2009028511A1 (ja) 2007-08-27 2008-08-26 リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法

Country Status (6)

Country Link
US (1) US8283103B2 (ja)
JP (1) JP5158382B2 (ja)
KR (1) KR20100058591A (ja)
CN (1) CN101790704B (ja)
TW (1) TW200925784A (ja)
WO (1) WO2009028511A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210132038A (ko) 2019-02-22 2021-11-03 제이에스알 가부시끼가이샤 막 형성용 조성물 및 반도체 기판의 제조 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9068086B2 (en) 2011-12-21 2015-06-30 Dow Global Technologies Llc Compositions for antireflective coatings
WO2014002994A1 (ja) 2012-06-26 2014-01-03 三菱レイヨン株式会社 高分子化合物の製造方法、および高分子化合物
DE102012223258A1 (de) * 2012-12-14 2014-06-18 Sgl Carbon Se Verfahren zur Synthese eines chlorfreien, präkeramischen Polymers für die Herstellung von keramischen Formkörpern
JP6458952B2 (ja) * 2013-09-27 2019-01-30 日産化学株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP6165690B2 (ja) * 2014-08-22 2017-07-19 信越化学工業株式会社 有機膜形成用組成物の製造方法
US10558119B2 (en) * 2015-05-25 2020-02-11 Nissan Chemical Industries, Ltd. Composition for coating resist pattern
US10468249B2 (en) * 2015-09-28 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process of a semiconductor structure with a middle layer
CN111433894A (zh) * 2017-11-17 2020-07-17 三井化学株式会社 半导体元件中间体、含金属膜形成用组合物、半导体元件中间体的制造方法、半导体元件的制造方法
JP7373470B2 (ja) * 2019-09-19 2023-11-02 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1160735A (ja) * 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
JP2000194128A (ja) * 1998-12-28 2000-07-14 Toshiba Corp パタ―ントランスファ組成物及びパタ―ントランスファ方法
JP2001093824A (ja) * 1999-09-27 2001-04-06 Shin Etsu Chem Co Ltd レジスト下層用組成物及びパターン形成方法
JP2004309561A (ja) * 2003-04-02 2004-11-04 Nissan Chem Ind Ltd 多環脂環式構造ポリマーを含有する反射防止膜形成組成物
WO2006126406A1 (ja) * 2005-05-24 2006-11-30 Nissan Chemical Industries, Ltd. ポリシラン化合物を含むリソグラフィー用下層膜形成組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761464A (en) * 1986-09-23 1988-08-02 Zeigler John M Interrupted polysilanes useful as photoresists
US4820788A (en) * 1986-10-31 1989-04-11 John M. Zeigler Poly(silyl silane)homo and copolymers
JP2001215703A (ja) * 2000-02-01 2001-08-10 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP3772077B2 (ja) * 2000-09-27 2006-05-10 株式会社東芝 パターン形成方法
JP4072643B2 (ja) 2002-11-08 2008-04-09 Ｊｓｒ株式会社 レジスト下層膜用組成物
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP4700929B2 (ja) 2003-06-03 2011-06-15 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP5296961B2 (ja) * 2005-09-12 2013-09-25 大阪瓦斯株式会社 コポリシラン及びこのコポリシランを含む樹脂組成物
US7622246B2 (en) * 2006-09-22 2009-11-24 Massachusetts Institute Of Technology Contrast enhancing layers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1160735A (ja) * 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
JP2000194128A (ja) * 1998-12-28 2000-07-14 Toshiba Corp パタ―ントランスファ組成物及びパタ―ントランスファ方法
JP2001093824A (ja) * 1999-09-27 2001-04-06 Shin Etsu Chem Co Ltd レジスト下層用組成物及びパターン形成方法
JP2004309561A (ja) * 2003-04-02 2004-11-04 Nissan Chem Ind Ltd 多環脂環式構造ポリマーを含有する反射防止膜形成組成物
WO2006126406A1 (ja) * 2005-05-24 2006-11-30 Nissan Chemical Industries, Ltd. ポリシラン化合物を含むリソグラフィー用下層膜形成組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210132038A (ko) 2019-02-22 2021-11-03 제이에스알 가부시끼가이샤 막 형성용 조성물 및 반도체 기판의 제조 방법

Also Published As

Publication number Publication date
CN101790704A (zh) 2010-07-28
JPWO2009028511A1 (ja) 2010-12-02
TW200925784A (en) 2009-06-16
CN101790704B (zh) 2012-07-18
US8283103B2 (en) 2012-10-09
US20110045404A1 (en) 2011-02-24
JP5158382B2 (ja) 2013-03-06
KR20100058591A (ko) 2010-06-03

Similar Documents

Publication Publication Date Title
WO2009028511A1 (ja) リソグラフィー用レジスト下層膜形成組成物及び半導体装置の製造方法
JP4579811B2 (ja) レジスト材料及びこれを用いたパターン形成方法
JP5101541B2 (ja) パターン形成方法
JP4822010B2 (ja) レジスト材料及びパターン形成方法
WO2015025949A1 (ja) 積層体
JP4687898B2 (ja) 含フッ素ケイ素化合物、シリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
SG159433A1 (en) Organic anti-reflective layer composition containing ring-opened phthalic anhydride and method for preparation thereof
JPWO2016175220A1 (ja) 積層体およびキット
TW200622501A (en) Polymer for forming anti-reflective coating layer
WO2009044742A1 (ja) レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤
TW200739268A (en) Antireflection film composition, substrate, and patterning process
JP2009069817A (ja) パターン形成方法及びこれに用いるパターン表面コート材
JP2009099986A5 (ja)
TW200626676A (en) Silicon-containing resist composition and method for forming pattern by using the same
TW201144944A (en) Positive type resist composition and method for producing microlens
WO2012067755A3 (en) Photoresist composition for negative development and pattern forming method using thereof
WO2008105266A1 (ja) 電子線リソグラフィー用レジスト下層膜形成組成物
CN104557552A (zh) 一种星形四苯基乙烯衍生物分子玻璃、正性光刻胶、正性光刻胶涂层及其应用
EP1975718A3 (en) Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent
JP2010285403A5 (ja)
TW200731461A (en) Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device
JP6044283B2 (ja) フラーレンｃ６０誘導体、並びに極紫外線光又は電子ビーム露光用レジスト組成物
WO2011081321A3 (ko) 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
TW200942972A (en) Light absorbent and organic antireflection coating composition containing the same
WO2009022583A1 (ja) 多孔質シリカ前駆体組成物及びその作製方法、多孔質シリカ膜及びその形成方法、半導体素子、画像表示装置、並びに液晶表示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880104686.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08828541

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009530130

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12673926

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107006404

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08828541

Country of ref document: EP

Kind code of ref document: A1