WO2011081321A3 - 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 - Google Patents

레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 Download PDF

Info

Publication number
WO2011081321A3
WO2011081321A3 PCT/KR2010/008849 KR2010008849W WO2011081321A3 WO 2011081321 A3 WO2011081321 A3 WO 2011081321A3 KR 2010008849 W KR2010008849 W KR 2010008849W WO 2011081321 A3 WO2011081321 A3 WO 2011081321A3
Authority
WO
WIPO (PCT)
Prior art keywords
resist
bottom layer
composition
manufacture
integrated circuit
Prior art date
Application number
PCT/KR2010/008849
Other languages
English (en)
French (fr)
Other versions
WO2011081321A2 (ko
Inventor
김미영
김상균
조현모
고상란
윤희찬
정용진
김종섭
Original Assignee
제일모직 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제일모직 주식회사 filed Critical 제일모직 주식회사
Priority to CN201080060221.8A priority Critical patent/CN102713758B/zh
Publication of WO2011081321A2 publication Critical patent/WO2011081321A2/ko
Publication of WO2011081321A3 publication Critical patent/WO2011081321A3/ko
Priority to US13/539,760 priority patent/US9140986B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

화학식 1로 표시되는 구조단위 40 내지 80 몰%를 포함하는 유기실란계 축중합물 및 용매를 포함하는 레지스트 하층막용 조성물이 제공된다.　 이로써, 본 발명은 저장안정성 및 내에칭성이 우수한 레지스트 하층막을 제공하여 우수한 패턴을 전사할 수 있는 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법을 제공할 수 있다.
PCT/KR2010/008849 2009-12-31 2010-12-10 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 WO2011081321A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080060221.8A CN102713758B (zh) 2009-12-31 2010-12-10 抗蚀剂底层组合物以及利用其制造半导体集成电路器件的方法
US13/539,760 US9140986B2 (en) 2009-12-31 2012-07-02 Resist underlayer composition and process of producing integrated circuit devices using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090136179A KR101344795B1 (ko) 2009-12-31 2009-12-31 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR10-2009-0136179 2009-12-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/539,760 Continuation US9140986B2 (en) 2009-12-31 2012-07-02 Resist underlayer composition and process of producing integrated circuit devices using the same

Publications (2)

Publication Number Publication Date
WO2011081321A2 WO2011081321A2 (ko) 2011-07-07
WO2011081321A3 true WO2011081321A3 (ko) 2011-11-03

Family

ID=44226952

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008849 WO2011081321A2 (ko) 2009-12-31 2010-12-10 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법

Country Status (5)

Country Link
US (1) US9140986B2 (ko)
KR (1) KR101344795B1 (ko)
CN (1) CN102713758B (ko)
TW (1) TWI497215B (ko)
WO (1) WO2011081321A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104380200A (zh) * 2012-07-30 2015-02-25 日产化学工业株式会社 含有磺酸*盐的含硅euv抗蚀剂下层膜形成用组合物
JP6681795B2 (ja) * 2015-09-24 2020-04-15 東京応化工業株式会社 表面処理剤及び表面処理方法
KR101862710B1 (ko) * 2015-10-30 2018-05-30 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
KR102028642B1 (ko) * 2016-12-19 2019-10-04 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치
US10186424B2 (en) 2017-06-14 2019-01-22 Rohm And Haas Electronic Materials Llc Silicon-based hardmask
CN111226175A (zh) * 2017-10-25 2020-06-02 日产化学株式会社 使用包含具有铵基的有机基的含硅抗蚀剂下层膜形成用组合物的半导体装置的制造方法
KR102551719B1 (ko) * 2021-07-20 2023-07-06 엠에이치디 주식회사 스타형 구조를 갖는 실리콘 함유 레지스트 하층막 형성용 조성물

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725795B1 (ko) * 2005-12-26 2007-06-08 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR20070095736A (ko) * 2006-03-22 2007-10-01 제일모직주식회사 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR20070122250A (ko) * 2006-06-26 2007-12-31 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3414251B2 (ja) * 1998-03-13 2003-06-09 信越化学工業株式会社 シリコーン樹脂含有エマルジョン組成物及びその製造方法並びに該組成物の硬化被膜を有する物品
FR2787100B1 (fr) * 1998-12-15 2001-03-09 Essilor Int Procede de preparation d'un sol organosilicie et materiaux obtenus a partir d'un tel sol
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
JP2004059738A (ja) * 2002-07-29 2004-02-26 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2004161876A (ja) * 2002-11-13 2004-06-10 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
KR100882409B1 (ko) * 2003-06-03 2009-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 반사 방지용 실리콘 수지, 반사 방지막 재료, 이것을 이용한 반사 방지막 및 패턴 형성 방법
KR100882794B1 (ko) 2005-03-01 2009-02-09 제이에스알 가부시끼가이샤 레지스트 하층막용 조성물 및 그의 제조 방법
CN101322074B (zh) 2005-12-06 2013-01-23 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的含有硅的抗蚀剂下层膜形成用组合物
JP4421566B2 (ja) 2005-12-26 2010-02-24 チェイル インダストリーズ インコーポレイテッド フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
US20070212886A1 (en) 2006-03-13 2007-09-13 Dong Seon Uh Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions
US7629260B2 (en) 2006-03-22 2009-12-08 Cheil Industries, Inc. Organosilane hardmask compositions and methods of producing semiconductor devices using the same
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
KR100813850B1 (ko) * 2007-03-29 2008-03-17 삼성에스디아이 주식회사 발광 장치
EP2072528A1 (en) * 2007-12-19 2009-06-24 Labeit, Mr. Siegfried A host cell deficient for MuRF1 and MuRF2
KR100930672B1 (ko) * 2008-01-11 2009-12-09 제일모직주식회사 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법
KR101354637B1 (ko) * 2009-12-30 2014-01-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725795B1 (ko) * 2005-12-26 2007-06-08 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR20070095736A (ko) * 2006-03-22 2007-10-01 제일모직주식회사 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR20070122250A (ko) * 2006-06-26 2007-12-31 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스

Also Published As

Publication number Publication date
US9140986B2 (en) 2015-09-22
KR101344795B1 (ko) 2013-12-26
CN102713758A (zh) 2012-10-03
WO2011081321A2 (ko) 2011-07-07
KR20110079195A (ko) 2011-07-07
US20120267766A1 (en) 2012-10-25
CN102713758B (zh) 2014-12-31
TWI497215B (zh) 2015-08-21
TW201135367A (en) 2011-10-16

Similar Documents

Publication Publication Date Title
WO2011081316A3 (ko) 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
WO2011081321A3 (ko) 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
WO2008101187A3 (en) Pro-drugs of peripheral phenolic opioid antagonists
WO2009127338A8 (de) Oxo-heterocyclisch substituierte carbonsäure-derivate und ihre verwendung
WO2010111238A3 (en) Improved biodegradable polymers
TWI367221B (en) Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process
WO2010054729A3 (de) Materialien für organische elektrolumineszenzvorrichtungen
WO2005121078A3 (de) Substituierte cyclopenten-verbindungen
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2011049325A3 (en) Novel compound for organic photoelectric device and organic photoelectric device including the same
WO2011117591A3 (en) Amine synergists and their use in radiation curing
WO2009108173A3 (en) Methods for formation of substrate elements
WO2011055933A3 (ko) 유기광전소자용 조성물, 이를 이용한 유기광전소자 및 이를 포함하는 표시장치
WO2008092954A8 (en) Polymorphic forms of a macrocyclic inhibitor of hcv
WO2008105497A1 (ja) ベンゾイミダゾール化合物およびその医薬用途
WO2011021804A3 (ko) 감응성 고분자 캡슐 및 그 제조방법
WO2010027236A3 (en) Fused heterocyclic compound
WO2010107249A3 (ko) 유기발광소자 및 이의 제조방법
WO2010097229A3 (en) Amorphous salt of a macrocyclic inhibitor of hcv
WO2006092076A3 (en) Carboxylic acid amides provoking a cooling sensation
WO2011081285A3 (ko) 레지스트 하층막용 방향족 고리 함유 중합체 및 이를 포함하는 레지스트 하층막 조성물
EP2474538A4 (en) CYCLIC COMPOUND, METHOD FOR PRODUCING THE SAME, RADIO-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMING METHOD
SG122018A1 (en) Multiple layer resist scheme implementing etch recipe particular to each layer
WO2008052379A3 (en) Organic compounds
WO2012124979A3 (ko) 도전성 잉크 조성물, 이를 이용한 인쇄 방법 및 이에 의하여 제조된 도전성 패턴

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080060221.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10841153

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10841153

Country of ref document: EP

Kind code of ref document: A2