WO2009028552A1 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
WO2009028552A1
WO2009028552A1 PCT/JP2008/065298 JP2008065298W WO2009028552A1 WO 2009028552 A1 WO2009028552 A1 WO 2009028552A1 JP 2008065298 W JP2008065298 W JP 2008065298W WO 2009028552 A1 WO2009028552 A1 WO 2009028552A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
targets
reaction gas
sputtering apparatus
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065298
Other languages
English (en)
French (fr)
Inventor
Yuichi Oishi
Yasuhiko Akamatsu
Makoto Arai
Motoshi Kobayashi
Junya Kiyota
Satoru Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to KR1020107004987A priority Critical patent/KR101196650B1/ko
Priority to CN2008801048814A priority patent/CN101790598B/zh
Publication of WO2009028552A1 publication Critical patent/WO2009028552A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

基板全面に亘って反応ガスを略均等に供給し、膜厚分布や比抵抗値などの膜質を基板全面で略均一にできる簡単な構成のスパッタリング装置を提供する。スパッタ室１１ａ内に所定の間隔を置いて並設した複数枚のターゲット４１と、各ターゲットへの電力投入を可能とするスパッタ電源Ｅと、スパッタ室へのスパッタガス及び反応ガスの導入を可能とするガス導入手段８とを備え、反応ガスを導入するガス導入手段は、少なくとも１本のガス供給管８４を有し、このガス供給管は、並設した各ターゲットの背面側で各ターゲットから離間させて配置されると共に、反応ガスを噴射する噴射口８４ａが形成されている。ターゲット相互間の各間隙を通って流れる前記反応ガス流量の調整を可能とする調節手段９が設けられている。 　 　 　 　 　 　 　 　 　 　
PCT/JP2008/065298 2007-08-31 2008-08-27 スパッタリング装置 Ceased WO2009028552A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020107004987A KR101196650B1 (ko) 2007-08-31 2008-08-27 스퍼터링 장치
CN2008801048814A CN101790598B (zh) 2007-08-31 2008-08-27 溅镀装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-226392 2007-08-31
JP2007226392A JP5291907B2 (ja) 2007-08-31 2007-08-31 スパッタリング装置

Publications (1)

Publication Number Publication Date
WO2009028552A1 true WO2009028552A1 (ja) 2009-03-05

Family

ID=40387269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065298 Ceased WO2009028552A1 (ja) 2007-08-31 2008-08-27 スパッタリング装置

Country Status (5)

Country Link
JP (1) JP5291907B2 (ja)
KR (1) KR101196650B1 (ja)
CN (1) CN101790598B (ja)
TW (1) TWI433951B (ja)
WO (1) WO2009028552A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015139739A1 (en) * 2014-03-18 2015-09-24 Applied Materials, Inc. Process gas segmentation for static reactive sputter processes
CN118166328A (zh) * 2024-03-20 2024-06-11 无锡尚积半导体科技有限公司 一种用于反应磁控溅射的反应气体控制系统及调试方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD589322S1 (en) 2006-10-05 2009-03-31 Lowe's Companies, Inc. Tool handle
JP5186152B2 (ja) * 2007-08-10 2013-04-17 株式会社アルバック 薄膜形成方法
KR20120130518A (ko) * 2011-05-23 2012-12-03 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
KR101794586B1 (ko) 2011-05-23 2017-11-08 삼성디스플레이 주식회사 스퍼터링용 분할 타겟 장치 및 그것을 이용한 스퍼터링 방법
JP5718767B2 (ja) * 2011-08-30 2015-05-13 株式会社アルバック スパッタリング装置
JP5875462B2 (ja) * 2012-05-21 2016-03-02 株式会社アルバック スパッタリング方法
KR20140108028A (ko) * 2013-02-28 2014-09-05 삼성디스플레이 주식회사 스퍼터링 장치 및 그것을 이용한 스퍼터링 방법
KR101683414B1 (ko) 2013-04-10 2016-12-06 캐논 아네르바 가부시키가이샤 스퍼터링 장치
KR102248048B1 (ko) * 2014-07-22 2021-05-04 주성엔지니어링(주) 가스 분배장치
JP6935283B2 (ja) * 2017-09-27 2021-09-15 株式会社アルバック 処理装置
CN111902562B (zh) * 2018-03-16 2022-08-12 株式会社爱发科 成膜方法
CN109023289B (zh) * 2018-08-08 2020-07-31 武汉华星光电半导体显示技术有限公司 靶材清洁组件及靶材清洁方法、成膜设备
CN109913830B (zh) * 2019-04-17 2021-08-06 深圳天成机器有限公司 一种多功能真空镀膜机
JP7263111B2 (ja) * 2019-05-13 2023-04-24 株式会社アルバック スパッタ成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11193458A (ja) * 1998-01-05 1999-07-21 Sony Corp スパッタ装置
JP2002129317A (ja) * 2000-10-24 2002-05-09 Nitto Denko Corp 反応性スパッタにおける反応性ガス導入装置
JP2004027277A (ja) * 2002-06-25 2004-01-29 Sanyo Shinku Kogyo Kk スパッタリング装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置
JP2005298966A (ja) * 2004-03-19 2005-10-27 Ulvac Japan Ltd スパッタリング方法及びその装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298996A (ja) * 2004-04-08 2005-10-27 Niwayuu:Kk 抗菌寝具の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11193458A (ja) * 1998-01-05 1999-07-21 Sony Corp スパッタ装置
JP2002129317A (ja) * 2000-10-24 2002-05-09 Nitto Denko Corp 反応性スパッタにおける反応性ガス導入装置
JP2004027277A (ja) * 2002-06-25 2004-01-29 Sanyo Shinku Kogyo Kk スパッタリング装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置
JP2005298966A (ja) * 2004-03-19 2005-10-27 Ulvac Japan Ltd スパッタリング方法及びその装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015139739A1 (en) * 2014-03-18 2015-09-24 Applied Materials, Inc. Process gas segmentation for static reactive sputter processes
JP2017509795A (ja) * 2014-03-18 2017-04-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静的反応性スパッタ処理のための処理ガスセグメンテーション
CN118166328A (zh) * 2024-03-20 2024-06-11 无锡尚积半导体科技有限公司 一种用于反应磁控溅射的反应气体控制系统及调试方法

Also Published As

Publication number Publication date
JP2009057608A (ja) 2009-03-19
CN101790598B (zh) 2011-10-05
KR101196650B1 (ko) 2012-11-02
CN101790598A (zh) 2010-07-28
JP5291907B2 (ja) 2013-09-18
KR20100049638A (ko) 2010-05-12
TW200925307A (en) 2009-06-16
TWI433951B (zh) 2014-04-11

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