JP5186152B2 - 薄膜形成方法 - Google Patents
薄膜形成方法 Download PDFInfo
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- JP5186152B2 JP5186152B2 JP2007208789A JP2007208789A JP5186152B2 JP 5186152 B2 JP5186152 B2 JP 5186152B2 JP 2007208789 A JP2007208789 A JP 2007208789A JP 2007208789 A JP2007208789 A JP 2007208789A JP 5186152 B2 JP5186152 B2 JP 5186152B2
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- thin film
- sputtering
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- target
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- 239000010409 thin film Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 38
- 230000015572 biosynthetic process Effects 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 93
- 238000004544 sputter deposition Methods 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 239000012495 reaction gas Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000005546 reactive sputtering Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 22
- 238000001514 detection method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
11a スパッタ室
31、32 シールド
41a乃至41h ターゲット
65 スイッチング素子
8 ガス導入手段
E1乃至E4 交流電源
S 基板
Claims (6)
- 真空雰囲気中のスパッタ室内にスパッタガス及び反応ガスを導入しつつ、スパッタ室内で処理すべき基板に対向させて配置したターゲットに電力投入し、プラズマ雰囲気中のイオンでターゲットをスパッタリングし、反応性スパッタリングにより基板表面に所定の薄膜を形成する薄膜形成方法において、
前記ターゲットを、スパッタ室内に所定の間隔を置いて並設した同一組成を有する複数枚のターゲットから構成し、前記反応ガスを、ターゲットの背面側の空間で一旦拡散させた後、各ターゲット相互間の間隙を通って基板に向かって供給し、前記薄膜が所定の膜厚に達するまでの間で反応ガス成分の含有濃度が高い領域を形成することを特徴とする薄膜形成方法。 - 前記含有濃度が高い領域の形成を、スパッタリング中に、スパッタ室に導入される反応ガスの流量を一定に保持しつつ、ターゲットへの投入電力を高電力から低電力に切換えることで行うことを特徴とする請求項1記載の薄膜形成方法。
- 前記投入電力の切換えを一定の周期で行うことを特徴とする請求項2記載の薄膜形成方法。
- 前記含有濃度が高い領域の形成を、スパッタリング中に、ターゲットへの投入電力を一定に保持しつつ、スパッタ室に導入される反応ガスの流量を低流量から高流量に切換えることで行うことを特徴とする請求項1記載の薄膜形成方法。
- 前記反応ガスの流量の増加を一定の周期で行うことを特徴とする請求項4記載の薄膜形成方法。
- 反応ガスとして酸素含有のものを用い、上記請求項1〜請求項5のいずれか1項に記載の薄膜形成方法により基板表面にCu含有の酸化物膜を形成する工程と、この酸化物膜表面にPVD法によりCu含有の金属膜を形成する工程と、この金属膜表面に、所定のプロセスガスを用いてCVD法により絶縁膜を形成する工程とを含むことを特徴とする薄膜形成方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208789A JP5186152B2 (ja) | 2007-08-10 | 2007-08-10 | 薄膜形成方法 |
KR1020107002777A KR101209019B1 (ko) | 2007-08-10 | 2008-08-05 | 박막 형성 방법 |
CN2008801028384A CN101778962B (zh) | 2007-08-10 | 2008-08-05 | 薄膜形成方法 |
PCT/JP2008/064007 WO2009022573A1 (ja) | 2007-08-10 | 2008-08-05 | 薄膜形成方法 |
TW097130421A TWI433950B (zh) | 2007-08-10 | 2008-08-08 | Film forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208789A JP5186152B2 (ja) | 2007-08-10 | 2007-08-10 | 薄膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009041082A JP2009041082A (ja) | 2009-02-26 |
JP5186152B2 true JP5186152B2 (ja) | 2013-04-17 |
Family
ID=40350627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007208789A Active JP5186152B2 (ja) | 2007-08-10 | 2007-08-10 | 薄膜形成方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5186152B2 (ja) |
KR (1) | KR101209019B1 (ja) |
CN (1) | CN101778962B (ja) |
TW (1) | TWI433950B (ja) |
WO (1) | WO2009022573A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5339965B2 (ja) * | 2009-03-02 | 2013-11-13 | 株式会社アルバック | スパッタリング装置用の交流電源 |
JP5604056B2 (ja) * | 2009-05-15 | 2014-10-08 | 関東化学株式会社 | 銅含有積層膜用エッチング液 |
US20140083841A1 (en) * | 2011-05-13 | 2014-03-27 | Sharp Kabushiki Kaisha | Thin film-forming method |
CN102978570B (zh) * | 2012-11-26 | 2014-10-08 | 蔡莳铨 | 金属蒸镀薄膜及其制作中间体和相关制作方法 |
CN104064454A (zh) * | 2014-06-11 | 2014-09-24 | 京东方科技集团股份有限公司 | 薄膜及阵列基板的制备方法、阵列基板 |
KR101673224B1 (ko) * | 2014-11-17 | 2016-11-16 | 전영권 | 태양전지 및 그 제조방법 |
KR102376098B1 (ko) * | 2018-03-16 | 2022-03-18 | 가부시키가이샤 알박 | 성막 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114965A (ja) * | 1986-11-01 | 1988-05-19 | Tosoh Corp | 積層膜の製造方法 |
JP2001192822A (ja) | 2000-01-07 | 2001-07-17 | Nippon Sheet Glass Co Ltd | 被膜の被覆方法およびそれにより得られる物品 |
JP4071020B2 (ja) * | 2002-03-18 | 2008-04-02 | 株式会社アルバック | 光触媒層形成方法 |
JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
JP2006302975A (ja) * | 2005-04-15 | 2006-11-02 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4669992B2 (ja) * | 2005-09-28 | 2011-04-13 | Dowaホールディングス株式会社 | 窒素含有クロム被膜、その製造方法及び機械部材 |
CN1966758A (zh) * | 2005-11-18 | 2007-05-23 | 电子科技大学 | 一种氧化钒薄膜的制备方法 |
JP5291907B2 (ja) * | 2007-08-31 | 2013-09-18 | 株式会社アルバック | スパッタリング装置 |
-
2007
- 2007-08-10 JP JP2007208789A patent/JP5186152B2/ja active Active
-
2008
- 2008-08-05 WO PCT/JP2008/064007 patent/WO2009022573A1/ja active Application Filing
- 2008-08-05 CN CN2008801028384A patent/CN101778962B/zh active Active
- 2008-08-05 KR KR1020107002777A patent/KR101209019B1/ko active IP Right Grant
- 2008-08-08 TW TW097130421A patent/TWI433950B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2009022573A1 (ja) | 2009-02-19 |
CN101778962A (zh) | 2010-07-14 |
KR20100041821A (ko) | 2010-04-22 |
CN101778962B (zh) | 2012-11-28 |
KR101209019B1 (ko) | 2012-12-10 |
TWI433950B (zh) | 2014-04-11 |
TW200912022A (en) | 2009-03-16 |
JP2009041082A (ja) | 2009-02-26 |
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