WO2009025317A1 - 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 - Google Patents

半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 Download PDF

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Publication number
WO2009025317A1
WO2009025317A1 PCT/JP2008/064910 JP2008064910W WO2009025317A1 WO 2009025317 A1 WO2009025317 A1 WO 2009025317A1 JP 2008064910 W JP2008064910 W JP 2008064910W WO 2009025317 A1 WO2009025317 A1 WO 2009025317A1
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WO
WIPO (PCT)
Prior art keywords
compound
solution
residue
value
removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064910
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English (en)
French (fr)
Inventor
Shingo Nakamura
Takehiko Kezuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP2009529053A priority Critical patent/JP4918939B2/ja
Priority to KR1020137033290A priority patent/KR20140018989A/ko
Priority to KR1020127024953A priority patent/KR101382998B1/ko
Priority to KR1020107005120A priority patent/KR101382700B1/ko
Priority to KR1020127024955A priority patent/KR101382935B1/ko
Priority to US12/671,419 priority patent/US8822396B2/en
Priority to CN200880103849A priority patent/CN101785087A/zh
Publication of WO2009025317A1 publication Critical patent/WO2009025317A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

　本発明は、従来のポリマー剥離液で解決し得なかった、Cu表面の亀裂および荒れを防止すると同時にCu表面の酸化を防止することが可能な表面保護剤を含むドライプロセス後の残渣除去液を提供し、これを用いた半導体デバイスの製造方法を提供する。ドライエッチング及び／又はアッシング後の半導体基板に存在する残渣の除去液であって、（１）式：＝Ｎ－ＮＨ－で示される構造を有するヘテロ五員環芳香族化合物（３個のＮが連続するものを除く）を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以下であるもの、（２）式：－Ｎ＝Ｃ（ＳＨ）－Ｘ－（式中、ＸはＮＨ、Ｏ又はＳを示す。）で示される構造を有するヘテロ五員環化合物を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以下であるもの、及び（３）窒素原子（Ｎ）を少なくとも１個有するヘテロ六員環芳香族化合物を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以上であるもの、からなる群より選ばれる少なくとも１種の化合物からなるCu表面保護剤と、Cu(銅)と錯体又はキレートを形成し得る化合物と、水とを含み、ｐＨが４～９である残渣除去液に関する。
PCT/JP2008/064910 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 Ceased WO2009025317A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009529053A JP4918939B2 (ja) 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
KR1020137033290A KR20140018989A (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
KR1020127024953A KR101382998B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
KR1020107005120A KR101382700B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
KR1020127024955A KR101382935B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
US12/671,419 US8822396B2 (en) 2007-08-22 2008-08-21 Solution for removing residue after semiconductor dry process and method of removing the residue using the same
CN200880103849A CN101785087A (zh) 2007-08-22 2008-08-21 半导体干式工艺后的残渣除去液和使用该残渣除去液的残渣除去方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-216241 2007-08-22
JP2007216241 2007-08-22

Publications (1)

Publication Number Publication Date
WO2009025317A1 true WO2009025317A1 (ja) 2009-02-26

Family

ID=40378216

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064910 Ceased WO2009025317A1 (ja) 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法

Country Status (6)

Country Link
US (1) US8822396B2 (ja)
JP (1) JP4918939B2 (ja)
KR (4) KR101382700B1 (ja)
CN (3) CN101785087A (ja)
TW (1) TWI431113B (ja)
WO (1) WO2009025317A1 (ja)

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JP2015133492A (ja) * 2015-01-28 2015-07-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP2019179829A (ja) * 2018-03-30 2019-10-17 ナガセケムテックス株式会社 エッチング液組成物
JP2020173361A (ja) * 2019-04-11 2020-10-22 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法

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WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
US9466488B2 (en) * 2014-05-09 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-semiconductor contact structure with doped interlayer
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
KR102326126B1 (ko) 2014-12-05 2021-11-15 삼성전자주식회사 포토레지스트용 고분자, 패턴 형성 방법 및 반도체 장치의 제조 방법
CN104845768B (zh) * 2015-05-12 2017-12-05 深圳市美克科技有限公司 一种线路板用中性水基清洗剂组合物
TWI818893B (zh) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
KR102663554B1 (ko) * 2016-06-10 2024-05-08 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조 방법
US11028340B2 (en) * 2017-03-06 2021-06-08 Fujimi Incorporated Composition for surface treatment, method for producing the same, surface treatment method using composition for surface treatment, and method for producing semiconductor substrate
JP7286806B2 (ja) * 2019-12-26 2023-06-05 富士フイルム株式会社 洗浄液、洗浄方法
CN113496868B (zh) * 2020-04-03 2023-03-10 重庆超硅半导体有限公司 一种硅片的抛光后清洗方法
CN115895800B (zh) * 2022-12-14 2024-12-27 芯越微电子材料(嘉兴)有限公司 半水基晶圆基底清洗液组合物及其使用方法

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
JP2015133492A (ja) * 2015-01-28 2015-07-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP2019179829A (ja) * 2018-03-30 2019-10-17 ナガセケムテックス株式会社 エッチング液組成物
JP7105084B2 (ja) 2018-03-30 2022-07-22 ナガセケムテックス株式会社 エッチング液組成物
JP2020173361A (ja) * 2019-04-11 2020-10-22 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
JP7274920B2 (ja) 2019-04-11 2023-05-17 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法

Also Published As

Publication number Publication date
KR20140018989A (ko) 2014-02-13
JP4918939B2 (ja) 2012-04-18
CN101785087A (zh) 2010-07-21
KR101382700B1 (ko) 2014-04-08
CN102839062A (zh) 2012-12-26
JPWO2009025317A1 (ja) 2010-11-25
KR20120115430A (ko) 2012-10-17
TW200932899A (en) 2009-08-01
US8822396B2 (en) 2014-09-02
KR20120115431A (ko) 2012-10-17
KR101382998B1 (ko) 2014-04-09
CN105543023A (zh) 2016-05-04
US20100203735A1 (en) 2010-08-12
KR101382935B1 (ko) 2014-04-09
TWI431113B (zh) 2014-03-21
KR20100051717A (ko) 2010-05-17

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