WO2009025317A1 - 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 - Google Patents

半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 Download PDF

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Publication number
WO2009025317A1
WO2009025317A1 PCT/JP2008/064910 JP2008064910W WO2009025317A1 WO 2009025317 A1 WO2009025317 A1 WO 2009025317A1 JP 2008064910 W JP2008064910 W JP 2008064910W WO 2009025317 A1 WO2009025317 A1 WO 2009025317A1
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WIPO (PCT)
Prior art keywords
compound
solution
residue
value
removal
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PCT/JP2008/064910
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English (en)
French (fr)
Inventor
Shingo Nakamura
Takehiko Kezuka
Original Assignee
Daikin Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Daikin Industries, Ltd. filed Critical Daikin Industries, Ltd.
Priority to CN200880103849A priority Critical patent/CN101785087A/zh
Priority to KR1020127024955A priority patent/KR101382935B1/ko
Priority to KR1020137033290A priority patent/KR20140018989A/ko
Priority to JP2009529053A priority patent/JP4918939B2/ja
Priority to KR1020127024953A priority patent/KR101382998B1/ko
Priority to US12/671,419 priority patent/US8822396B2/en
Priority to KR1020107005120A priority patent/KR101382700B1/ko
Publication of WO2009025317A1 publication Critical patent/WO2009025317A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

　本発明は、従来のポリマー剥離液で解決し得なかった、Cu表面の亀裂および荒れを防止すると同時にCu表面の酸化を防止することが可能な表面保護剤を含むドライプロセス後の残渣除去液を提供し、これを用いた半導体デバイスの製造方法を提供する。ドライエッチング及び／又はアッシング後の半導体基板に存在する残渣の除去液であって、（１）式：＝Ｎ－ＮＨ－で示される構造を有するヘテロ五員環芳香族化合物（３個のＮが連続するものを除く）を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以下であるもの、（２）式：－Ｎ＝Ｃ（ＳＨ）－Ｘ－（式中、ＸはＮＨ、Ｏ又はＳを示す。）で示される構造を有するヘテロ五員環化合物を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以下であるもの、及び（３）窒素原子（Ｎ）を少なくとも１個有するヘテロ六員環芳香族化合物を基本骨格として含む化合物であり、その水溶液（１０ｐｐｍ、２３°C）のｐＨが７以上であるもの、からなる群より選ばれる少なくとも１種の化合物からなるCu表面保護剤と、Cu(銅)と錯体又はキレートを形成し得る化合物と、水とを含み、ｐＨが４～９である残渣除去液に関する。
PCT/JP2008/064910 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 WO2009025317A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN200880103849A CN101785087A (zh) 2007-08-22 2008-08-21 半导体干式工艺后的残渣除去液和使用该残渣除去液的残渣除去方法
KR1020127024955A KR101382935B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
KR1020137033290A KR20140018989A (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
JP2009529053A JP4918939B2 (ja) 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
KR1020127024953A KR101382998B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법
US12/671,419 US8822396B2 (en) 2007-08-22 2008-08-21 Solution for removing residue after semiconductor dry process and method of removing the residue using the same
KR1020107005120A KR101382700B1 (ko) 2007-08-22 2008-08-21 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-216241 2007-08-22
JP2007216241 2007-08-22

Publications (1)

Publication Number Publication Date
WO2009025317A1 true WO2009025317A1 (ja) 2009-02-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064910 WO2009025317A1 (ja) 2007-08-22 2008-08-21 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法

Country Status (6)

Country Link
US (1) US8822396B2 (ja)
JP (1) JP4918939B2 (ja)
KR (4) KR20140018989A (ja)
CN (3) CN105543023A (ja)
TW (1) TWI431113B (ja)
WO (1) WO2009025317A1 (ja)

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JP2015133492A (ja) * 2015-01-28 2015-07-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP2019179829A (ja) * 2018-03-30 2019-10-17 ナガセケムテックス株式会社 エッチング液組成物
JP2020173361A (ja) * 2019-04-11 2020-10-22 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法

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CN104845768B (zh) * 2015-05-12 2017-12-05 深圳市美克科技有限公司 一种线路板用中性水基清洗剂组合物
TWI818893B (zh) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
KR102663554B1 (ko) * 2016-06-10 2024-05-08 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조 방법
CN110383426B (zh) * 2017-03-06 2023-05-09 福吉米株式会社 表面处理组合物及其制造方法、以及使用表面处理组合物的表面处理方法及半导体基板的制造方法
CN113496868B (zh) * 2020-04-03 2023-03-10 重庆超硅半导体有限公司 一种硅片的抛光后清洗方法
CN115895800A (zh) * 2022-12-14 2023-04-04 芯越微电子材料(嘉兴)有限公司 半水基晶圆基底清洗液组合物及其使用方法

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JP2015133492A (ja) * 2015-01-28 2015-07-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP2019179829A (ja) * 2018-03-30 2019-10-17 ナガセケムテックス株式会社 エッチング液組成物
JP7105084B2 (ja) 2018-03-30 2022-07-22 ナガセケムテックス株式会社 エッチング液組成物
JP2020173361A (ja) * 2019-04-11 2020-10-22 東京応化工業株式会社 洗浄液、及び金属レジストを備えた支持体の洗浄方法
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Also Published As

Publication number Publication date
JP4918939B2 (ja) 2012-04-18
TW200932899A (en) 2009-08-01
KR20120115431A (ko) 2012-10-17
JPWO2009025317A1 (ja) 2010-11-25
KR20100051717A (ko) 2010-05-17
KR101382998B1 (ko) 2014-04-09
KR20140018989A (ko) 2014-02-13
CN105543023A (zh) 2016-05-04
CN102839062A (zh) 2012-12-26
CN101785087A (zh) 2010-07-21
US8822396B2 (en) 2014-09-02
US20100203735A1 (en) 2010-08-12
KR101382935B1 (ko) 2014-04-09
KR20120115430A (ko) 2012-10-17
TWI431113B (zh) 2014-03-21
KR101382700B1 (ko) 2014-04-08

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