WO2009016928A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2009016928A1
WO2009016928A1 PCT/JP2008/062266 JP2008062266W WO2009016928A1 WO 2009016928 A1 WO2009016928 A1 WO 2009016928A1 JP 2008062266 W JP2008062266 W JP 2008062266W WO 2009016928 A1 WO2009016928 A1 WO 2009016928A1
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WO
WIPO (PCT)
Prior art keywords
layer
metal layer
semiconductor device
manufacturing
semiconductor substrate
Prior art date
Application number
PCT/JP2008/062266
Other languages
English (en)
French (fr)
Inventor
Shouji Higashida
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US12/671,581 priority Critical patent/US20110284948A1/en
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to EP08790927A priority patent/EP2175488A4/en
Priority to JP2009525323A priority patent/JP5460320B2/ja
Publication of WO2009016928A1 publication Critical patent/WO2009016928A1/ja
Priority to US14/790,162 priority patent/US20150303184A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

　順方向損失の増加を抑制し、かつ逆回復損失を低減化する半導体装置およびその製造方法を提供する。 　第１導電型を有し、ドレイン層を形成する半導体基板(１０)と、半導体基板の表面上に配置され、第２導電型を有するベース層(６)と、ベース層(６)上に配置され、第１導電型を有するソース層(４)と、ベース層(６)およびソース層(４)上に配置されたゲート絶縁膜(２)と、ゲート絶縁膜(２)上に配置されたゲート電極(３)と、ベース層(６)およびソース層(４)に接続されたソース電極(１)と、半導体基板(１０)の裏面上に配置され、半導体基板(１０)とアロイ処理された金属層(１１)と、金属層(１１)上に配置された金属層(１２)と、金属層(１２)上に配置された金属層(１４)と、金属層(１４)上に配置された金属層(１６)とを備える半導体装置およびその製造方法。
PCT/JP2008/062266 2007-07-31 2008-07-07 半導体装置およびその製造方法 WO2009016928A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/671,581 US20110284948A1 (en) 2007-07-31 2007-07-07 Semiconductor device and fabrication method for the same
EP08790927A EP2175488A4 (en) 2007-07-31 2008-07-07 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
JP2009525323A JP5460320B2 (ja) 2007-07-31 2008-07-07 半導体装置およびその製造方法
US14/790,162 US20150303184A1 (en) 2007-07-31 2015-07-02 Semiconductor device and fabrication method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007199122 2007-07-31
JP2007-199122 2007-07-31

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/671,581 A-371-Of-International US20110284948A1 (en) 2007-07-31 2007-07-07 Semiconductor device and fabrication method for the same
US14/790,162 Continuation US20150303184A1 (en) 2007-07-31 2015-07-02 Semiconductor device and fabrication method for the same

Publications (1)

Publication Number Publication Date
WO2009016928A1 true WO2009016928A1 (ja) 2009-02-05

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ID=40304165

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PCT/JP2008/062266 WO2009016928A1 (ja) 2007-07-31 2008-07-07 半導体装置およびその製造方法

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US (2) US20110284948A1 (ja)
EP (1) EP2175488A4 (ja)
JP (1) JP5460320B2 (ja)
WO (1) WO2009016928A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス
JP2016046288A (ja) * 2014-08-20 2016-04-04 新日鐵住金株式会社 金属酸化膜半導体電界効果トランジスタ及び半導体デバイス

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658568B (zh) * 2017-01-03 2019-05-01 Leadtrend Technology Corporation 高壓半導體元件以及同步整流控制器
CN108305872B (zh) * 2017-01-12 2020-12-11 通嘉科技股份有限公司 高压半导体元件以及同步整流控制器

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US5273917A (en) 1989-08-19 1993-12-28 Fuji Electric Co., Ltd. Method for manufacturing a conductivity modulation MOSFET
US5589408A (en) 1995-07-05 1996-12-31 Motorola, Inc. Method of forming an alloyed drain field effect transistor and device formed
JPH10173166A (ja) * 1996-12-05 1998-06-26 Murata Mfg Co Ltd 電界効果トランジスタ及びその製造方法
JPH10178188A (ja) * 1996-12-16 1998-06-30 Murata Mfg Co Ltd ショットキー接合半導体装置の製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811065A (en) 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US5273917A (en) 1989-08-19 1993-12-28 Fuji Electric Co., Ltd. Method for manufacturing a conductivity modulation MOSFET
US5589408A (en) 1995-07-05 1996-12-31 Motorola, Inc. Method of forming an alloyed drain field effect transistor and device formed
JPH10173166A (ja) * 1996-12-05 1998-06-26 Murata Mfg Co Ltd 電界効果トランジスタ及びその製造方法
JPH10178188A (ja) * 1996-12-16 1998-06-30 Murata Mfg Co Ltd ショットキー接合半導体装置の製造方法
JPH10178190A (ja) * 1996-12-16 1998-06-30 Murata Mfg Co Ltd 半導体装置の製造方法
JPH10308359A (ja) * 1997-05-07 1998-11-17 Sanken Electric Co Ltd 半導体素子及びその電極の形成方法
JP2004303755A (ja) * 2003-03-28 2004-10-28 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US20050242411A1 (en) 2004-04-29 2005-11-03 Hsuan Tso [superjunction schottky device and fabrication thereof]

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Title
See also references of EP2175488A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013516058A (ja) * 2009-12-23 2013-05-09 ユナイティッド モノリスィック セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子デバイスの製造方法および該方法により製造された電子デバイス
JP2016046288A (ja) * 2014-08-20 2016-04-04 新日鐵住金株式会社 金属酸化膜半導体電界効果トランジスタ及び半導体デバイス

Also Published As

Publication number Publication date
US20110284948A1 (en) 2011-11-24
US20150303184A1 (en) 2015-10-22
EP2175488A4 (en) 2010-12-08
JPWO2009016928A1 (ja) 2010-10-14
JP5460320B2 (ja) 2014-04-02
EP2175488A1 (en) 2010-04-14

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