JPS5799785A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS5799785A JPS5799785A JP17672780A JP17672780A JPS5799785A JP S5799785 A JPS5799785 A JP S5799785A JP 17672780 A JP17672780 A JP 17672780A JP 17672780 A JP17672780 A JP 17672780A JP S5799785 A JPS5799785 A JP S5799785A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- rim
- substrate
- barrier metal
- slope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 5
- 239000002184 metal Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 241000478345 Afer Species 0.000 abstract 1
- 229910015365 Au—Si Inorganic materials 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve inverse characteristics without deteriorating the characteristics in normal direction, by making hole open to the surface of an insulating film, providing a barrier metal layer on an exposed Si-substrate, and making a rim-contacting Si-layer a high resistant or inactive layer. CONSTITUTION:A slope 11 is made by opening a hole 3a to SiO2 2a on an N type Si-substrate 1, and etching with solution of (pure water):HF=1:30. A Pt film 6 is evaporated. A barrier metal 4 of Au-Si alloy is made afer a proper heat treatment. Next, the accelerating voltage, dose, and the like are selected after B-ion implantation. The metal layer 4 does not pass through before reaching the substrate 1 because of a thin film of the slope. A high-resistant P<-> or N<-> or electrically inactive layer 7 is made after heat treatment and activation. The layer 7 does not enter under the rim of barrier metal 4. And so, an effective area of Schottky barrier diode does not decrease. The existence of layer 7 relieaves field concentration at the rim of layer 4 at inverse bias. The good inverse characteristics can be obtained without decrease of normal characteristics. The increase of area is very little.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17672780A JPS5799785A (en) | 1980-12-11 | 1980-12-11 | Schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17672780A JPS5799785A (en) | 1980-12-11 | 1980-12-11 | Schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5799785A true JPS5799785A (en) | 1982-06-21 |
Family
ID=16018717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17672780A Pending JPS5799785A (en) | 1980-12-11 | 1980-12-11 | Schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799785A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2175488A1 (en) * | 2007-07-31 | 2010-04-14 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1980
- 1980-12-11 JP JP17672780A patent/JPS5799785A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2175488A1 (en) * | 2007-07-31 | 2010-04-14 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP2175488A4 (en) * | 2007-07-31 | 2010-12-08 | Rohm Co Ltd | Semiconductor device and method for manufacturing the same |
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