WO2008153109A1 - ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 - Google Patents

ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 Download PDF

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Publication number
WO2008153109A1
WO2008153109A1 PCT/JP2008/060799 JP2008060799W WO2008153109A1 WO 2008153109 A1 WO2008153109 A1 WO 2008153109A1 JP 2008060799 W JP2008060799 W JP 2008060799W WO 2008153109 A1 WO2008153109 A1 WO 2008153109A1
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WIPO (PCT)
Prior art keywords
resist composition
pattern
negative development
forming
acid
Prior art date
Application number
PCT/JP2008/060799
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English (en)
French (fr)
Inventor
Hideaki Tsubaki
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to US12/664,117 priority Critical patent/US7851140B2/en
Priority to JP2009519307A priority patent/JP4551970B2/ja
Priority to EP08765543.7A priority patent/EP2157479B1/en
Publication of WO2008153109A1 publication Critical patent/WO2008153109A1/ja
Priority to US12/941,386 priority patent/US8642253B2/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/285—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety
    • C08F220/286—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety and containing polyethylene oxide in the alcohol moiety, e.g. methoxy polyethylene glycol (meth)acrylate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

　パターンの食い込みが改善された良好な形状のパターンを形成し、更にはラインエッジラフネスが低減され、パターン寸法の面内均一性が高められた、ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法及びこれを用いたパターン形成方法を提供する。 　（Ａ）酸の作用により極性が増大し、ポジ型現像液に対する溶解度が増大し、ネガ型現像液に対する溶解度が減少する樹脂、（Ｂ）活性光線又は放射線の照射により酸解離指数ｐＫａが－４．０以下の酸を発生する化合物及び（Ｃ）溶剤を含有するネガ型現像用レジスト組成物及びこれを用いたパターン形成方法。
PCT/JP2008/060799 2007-06-12 2008-06-12 ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 WO2008153109A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/664,117 US7851140B2 (en) 2007-06-12 2008-06-12 Resist composition for negative tone development and pattern forming method using the same
JP2009519307A JP4551970B2 (ja) 2007-06-12 2008-06-12 ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
EP08765543.7A EP2157479B1 (en) 2007-06-12 2008-06-12 Resist composition for negative development and method of forming pattern therewith
US12/941,386 US8642253B2 (en) 2007-06-12 2010-11-08 Resist composition for negative tone development and pattern forming method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-155083 2007-06-12
JP2007155083 2007-06-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/664,117 A-371-Of-International US7851140B2 (en) 2007-06-12 2008-06-12 Resist composition for negative tone development and pattern forming method using the same
US12/941,386 Continuation US8642253B2 (en) 2007-06-12 2010-11-08 Resist composition for negative tone development and pattern forming method using the same

Publications (1)

Publication Number Publication Date
WO2008153109A1 true WO2008153109A1 (ja) 2008-12-18

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PCT/JP2008/060799 WO2008153109A1 (ja) 2007-06-12 2008-06-12 ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法

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US (2) US7851140B2 (ja)
EP (1) EP2157479B1 (ja)
JP (1) JP4551970B2 (ja)
KR (1) KR100989565B1 (ja)
WO (1) WO2008153109A1 (ja)

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JP2009251037A (ja) * 2008-04-01 2009-10-29 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
WO2009152276A2 (en) * 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
US20110076615A1 (en) * 2009-09-30 2011-03-31 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
WO2011118855A1 (en) * 2010-03-25 2011-09-29 Fujifilm Corporation Pattern forming method and resist composition
WO2011118824A1 (en) * 2010-03-23 2011-09-29 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film
WO2012046581A1 (ja) * 2010-10-06 2012-04-12 Jsr株式会社 パターン形成方法及び感放射線性樹脂組成物
WO2012053527A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
JP2013011833A (ja) * 2011-06-01 2013-01-17 Jsr Corp パターン形成方法及び現像液
JP2013047783A (ja) * 2011-07-28 2013-03-07 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
WO2013062066A1 (en) * 2011-10-27 2013-05-02 Fujifilm Corporation Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
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US8795954B2 (en) 2010-10-15 2014-08-05 Jsr Corporation Resist pattern-forming method, and radiation-sensitive resin composition
US9164387B2 (en) 2010-10-04 2015-10-20 Jsr Corporation Pattern-forming method, and radiation-sensitive resin composition

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US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
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KR20100017783A (ko) * 2007-06-12 2010-02-16 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
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JP5349765B2 (ja) * 2007-06-13 2013-11-20 東京応化工業株式会社 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
CN101943860B (zh) * 2009-06-08 2013-12-11 罗门哈斯电子材料有限公司 平版印刷方法
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JP5775701B2 (ja) 2010-02-26 2015-09-09 富士フイルム株式会社 パターン形成方法及びレジスト組成物
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
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US9213234B2 (en) 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
JP5948187B2 (ja) * 2012-08-30 2016-07-06 富士フイルム株式会社 パターン形成方法、並びに、これを用いた電子デバイスの製造方法
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CN106847676A (zh) * 2015-12-03 2017-06-13 中芯国际集成电路制造(上海)有限公司 半导体器件的图案化方法及形成方法
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US10727055B2 (en) 2017-02-10 2020-07-28 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
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WO2020205789A1 (en) * 2019-03-31 2020-10-08 Massachusetts Institute Of Technology Small molecule and polymeric anions for lithium-solvate complexes: synthesis and battery applications

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749568A (ja) * 1993-05-31 1995-02-21 Sony Corp 感光性組成物及びパターン形成方法
JPH07199467A (ja) * 1993-12-28 1995-08-04 Nec Corp 感光性樹脂組成物およびパターン形成方法
JP2003162061A (ja) * 2001-09-14 2003-06-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006084530A (ja) * 2004-09-14 2006-03-30 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP2006091421A (ja) * 2004-09-24 2006-04-06 Fuji Photo Film Co Ltd 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2006350212A (ja) * 2005-06-20 2006-12-28 Fujifilm Holdings Corp ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743529A (en) * 1986-11-21 1988-05-10 Eastman Kodak Company Negative working photoresists responsive to shorter visible wavelengths and novel coated articles
US5061607A (en) * 1990-02-13 1991-10-29 Eastman Kodak Company Composition for protecting the surface of lithographic printing plates
JPH06138666A (ja) * 1992-10-23 1994-05-20 Nikon Corp レジスト現像液
JPH06194847A (ja) 1992-12-22 1994-07-15 Tokuyama Sekiyu Kagaku Kk ネガ型フォトレジスト用現像液
US5866304A (en) 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
JPH07261392A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 化学増幅レジスト及びこれを用いるレジストパターンの形成方法
JP3943741B2 (ja) 1999-01-07 2007-07-11 株式会社東芝 パターン形成方法
JP3444821B2 (ja) 1999-10-06 2003-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP2001215731A (ja) 2000-02-01 2001-08-10 Nippon Zeon Co Ltd レジスト現像液および現像方法
JP2003532765A (ja) * 2000-05-05 2003-11-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト用コポリマーおよびそのための方法
US6660459B2 (en) * 2001-03-14 2003-12-09 Advanced Micro Devices, Inc. System and method for developing a photoresist layer with reduced pattern collapse
JP4645789B2 (ja) 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
US6818379B2 (en) 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
JP4193478B2 (ja) 2001-12-03 2008-12-10 住友化学株式会社 スルホニウム塩及びその用途
JP4225046B2 (ja) * 2001-12-13 2009-02-18 住友化学株式会社 エネルギー活性なスルホニウム塩及びその用途
JP4199958B2 (ja) 2002-06-03 2008-12-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2004069841A (ja) * 2002-08-02 2004-03-04 Sharp Corp マスクパターンおよびそれを用いたレジストパターンの形成方法
JP2006156422A (ja) 2002-12-27 2006-06-15 Nikon Corp パターン形成方法、電子デバイス製造方法、及び電子デバイス
JP2005101498A (ja) * 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
ATE370975T1 (de) * 2003-06-26 2007-09-15 Jsr Corp Photoresistpolymerzusammensetzungen
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
KR100942627B1 (ko) * 2004-04-09 2010-02-17 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 재료 및 이를 이용한 패턴 형성 방법
US7459261B2 (en) 2005-01-06 2008-12-02 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7510972B2 (en) 2005-02-14 2009-03-31 Tokyo Electron Limited Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device
JP2006227174A (ja) 2005-02-16 2006-08-31 Ricoh Co Ltd レジスト現像液及びパターン形成方法
JP2006258925A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
JP2007071978A (ja) * 2005-09-05 2007-03-22 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP2007108581A (ja) * 2005-10-17 2007-04-26 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2007140188A (ja) * 2005-11-18 2007-06-07 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
EP2138898B1 (en) * 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
WO2008140119A1 (ja) * 2007-05-15 2008-11-20 Fujifilm Corporation パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
KR100989565B1 (ko) 2007-06-12 2010-10-25 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) * 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP5746818B2 (ja) * 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP5639755B2 (ja) 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749568A (ja) * 1993-05-31 1995-02-21 Sony Corp 感光性組成物及びパターン形成方法
JPH07199467A (ja) * 1993-12-28 1995-08-04 Nec Corp 感光性樹脂組成物およびパターン形成方法
JP2003162061A (ja) * 2001-09-14 2003-06-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006084530A (ja) * 2004-09-14 2006-03-30 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP2006091421A (ja) * 2004-09-24 2006-04-06 Fuji Photo Film Co Ltd 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2006350212A (ja) * 2005-06-20 2006-12-28 Fujifilm Holdings Corp ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009251037A (ja) * 2008-04-01 2009-10-29 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
US10310375B2 (en) 2008-06-10 2019-06-04 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
WO2009152276A2 (en) * 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
WO2009152276A3 (en) * 2008-06-10 2010-02-04 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
US8685616B2 (en) 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
US20110076615A1 (en) * 2009-09-30 2011-03-31 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
US8940471B2 (en) * 2009-09-30 2015-01-27 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
US8647812B2 (en) 2010-03-23 2014-02-11 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film
WO2011118824A1 (en) * 2010-03-23 2011-09-29 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film
JP2011221501A (ja) * 2010-03-23 2011-11-04 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
US20130011619A1 (en) * 2010-03-23 2013-01-10 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film
US9551935B2 (en) 2010-03-25 2017-01-24 Fujifilm Corporation Pattern forming method and resist composition
JP2011221509A (ja) * 2010-03-25 2011-11-04 Fujifilm Corp パターン形成方法及びレジスト組成物
WO2011118855A1 (en) * 2010-03-25 2011-09-29 Fujifilm Corporation Pattern forming method and resist composition
US9164387B2 (en) 2010-10-04 2015-10-20 Jsr Corporation Pattern-forming method, and radiation-sensitive resin composition
WO2012046581A1 (ja) * 2010-10-06 2012-04-12 Jsr株式会社 パターン形成方法及び感放射線性樹脂組成物
US9170488B2 (en) 2010-10-15 2015-10-27 Jsr Corporation Resist pattern-forming method, and radiation-sensitive resin composition
US8795954B2 (en) 2010-10-15 2014-08-05 Jsr Corporation Resist pattern-forming method, and radiation-sensitive resin composition
WO2012053527A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
JPWO2012053527A1 (ja) * 2010-10-22 2014-02-24 Jsr株式会社 パターン形成方法及び感放射線性組成物
US9034559B2 (en) 2010-10-22 2015-05-19 Jsr Corporation Pattern-forming method, and radiation-sensitive composition
JP2015172755A (ja) * 2010-10-22 2015-10-01 Jsr株式会社 パターン形成方法
US9335630B2 (en) 2010-10-22 2016-05-10 Jsr Corporation Pattern-forming method, and radiation-sensitive composition
JP2013011833A (ja) * 2011-06-01 2013-01-17 Jsr Corp パターン形成方法及び現像液
JP2013047783A (ja) * 2011-07-28 2013-03-07 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
US9417528B2 (en) 2011-10-27 2016-08-16 Fujifilm Corporation Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
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