WO2008142992A1 - 単結晶の製造方法 - Google Patents

単結晶の製造方法 Download PDF

Info

Publication number
WO2008142992A1
WO2008142992A1 PCT/JP2008/058482 JP2008058482W WO2008142992A1 WO 2008142992 A1 WO2008142992 A1 WO 2008142992A1 JP 2008058482 W JP2008058482 W JP 2008058482W WO 2008142992 A1 WO2008142992 A1 WO 2008142992A1
Authority
WO
WIPO (PCT)
Prior art keywords
increase
single crystal
evaporation rate
dopant
chamber
Prior art date
Application number
PCT/JP2008/058482
Other languages
English (en)
French (fr)
Inventor
Yasuhito Narushima
Fukuo Ogawa
Shinichi Kawazoe
Toshimichi Kubota
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to US12/515,725 priority Critical patent/US8580032B2/en
Priority to DE112008000034.4T priority patent/DE112008000034B4/de
Publication of WO2008142992A1 publication Critical patent/WO2008142992A1/ja
Priority to US14/046,493 priority patent/US8852340B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　単結晶引き上げ装置（１）を利用した単結晶（６）の製造時における偏析の影響、揮発性ドーパントの蒸発面積、引き上げ速度の影響を考慮に入れて、ドーパント蒸発速度を算出するための蒸発速度式を導出する。引き上げ時の所定のタイミングにおいて、蒸発速度式から算出されるドーパント蒸発累積量が所定量となる状態に、チャンバ（３０）のガス流量および炉内圧力を制御する。このため、蒸発速度式に基づき予想した単結晶（６）の抵抗率プロファイルと、実際の抵抗率プロファイルとの差異を小さくすることができる。また、揮発性ドーパントを後から添加しないので、作業者の負担の増加、製造時間の長期化、チャンバ（３０）内に付着するアモルファスの増大、単結晶化の阻害、チャンバ（３０）内清掃時の負担の増加を抑制できる。
PCT/JP2008/058482 2007-05-10 2008-05-07 単結晶の製造方法 WO2008142992A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/515,725 US8580032B2 (en) 2007-05-10 2008-05-07 Method for manufacturing single crystal
DE112008000034.4T DE112008000034B4 (de) 2007-05-10 2008-05-07 Verfahren zum Herstellen eines Einkristalls
US14/046,493 US8852340B2 (en) 2007-05-10 2013-10-04 Method for manufacturing single crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-125847 2007-05-10
JP2007125847A JP5118386B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/515,725 A-371-Of-International US8580032B2 (en) 2007-05-10 2008-05-07 Method for manufacturing single crystal
US14/046,493 Division US8852340B2 (en) 2007-05-10 2013-10-04 Method for manufacturing single crystal

Publications (1)

Publication Number Publication Date
WO2008142992A1 true WO2008142992A1 (ja) 2008-11-27

Family

ID=40031707

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058482 WO2008142992A1 (ja) 2007-05-10 2008-05-07 単結晶の製造方法

Country Status (4)

Country Link
US (2) US8580032B2 (ja)
JP (1) JP5118386B2 (ja)
DE (1) DE112008000034B4 (ja)
WO (1) WO2008142992A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5118386B2 (ja) * 2007-05-10 2013-01-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
JP5067406B2 (ja) * 2009-08-26 2012-11-07 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶製造装置
JP5170061B2 (ja) * 2009-11-02 2013-03-27 信越半導体株式会社 抵抗率計算プログラム及び単結晶の製造方法
JP5595318B2 (ja) * 2011-03-29 2014-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上装置及び単結晶引き上げ方法
KR101390797B1 (ko) * 2012-01-05 2014-05-02 주식회사 엘지실트론 실리콘 단결정 성장 방법
JP2016503964A (ja) * 2012-12-31 2016-02-08 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニＭＥＭＣ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ， ＳｐＡ インジウムドープシリコンウェハおよびそれを用いた太陽電池セル
WO2018159108A1 (ja) * 2017-02-28 2018-09-07 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶インゴット
JP7080017B2 (ja) 2017-04-25 2022-06-03 株式会社Sumco ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
JP6881560B1 (ja) * 2019-12-24 2021-06-02 株式会社Sumco シリコン単結晶の製造方法、シリコン単結晶
JP7272343B2 (ja) * 2020-12-01 2023-05-12 株式会社Sumco ｎ型シリコン単結晶の製造方法
CN112981520A (zh) * 2021-01-08 2021-06-18 隆基绿能科技股份有限公司 一种单晶硅拉晶工艺方法
CN115341268A (zh) * 2021-05-13 2022-11-15 内蒙古中环协鑫光伏材料有限公司 一种自动控制单晶硅电阻率的方法
CN113564693B (zh) * 2021-08-02 2022-09-27 宁夏中欣晶圆半导体科技有限公司 低电阻率重掺砷硅单晶生产方法
CN113584585B (zh) * 2021-08-05 2022-09-27 宁夏中欣晶圆半导体科技有限公司 能够降低头部电阻率的重掺As硅单晶生产方法
CN114717647A (zh) * 2022-04-06 2022-07-08 广东高景太阳能科技有限公司 一种晶棒的掺杂剂添加量的确定方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570279A (ja) * 1991-09-17 1993-03-23 Nippon Steel Corp シリコン単結晶の製造方法
JPH07232994A (ja) * 1993-12-28 1995-09-05 Res Dev Corp Of Japan 単結晶引上げ用Ｓｉ融液の調整方法
JPH09227275A (ja) * 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
JP2000233994A (ja) * 1999-02-10 2000-08-29 Mitsubishi Materials Silicon Corp シリコン単結晶の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JPH0777994B2 (ja) 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
DE69428302T2 (de) * 1993-03-29 2002-07-04 Japan Res Dev Corp Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.
US5477805A (en) 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6592662B2 (en) 2000-02-28 2003-07-15 Shin-Etsu Handotai Co., Ltd. Method for preparing silicon single crystal and silicon single crystal
DE10250822B4 (de) 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
JP4813313B2 (ja) * 2006-09-29 2011-11-09 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上げ装置及び該装置に使用される黒鉛部材並びに黒鉛部材の劣化防止方法
JP5118386B2 (ja) * 2007-05-10 2013-01-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570279A (ja) * 1991-09-17 1993-03-23 Nippon Steel Corp シリコン単結晶の製造方法
JPH07232994A (ja) * 1993-12-28 1995-09-05 Res Dev Corp Of Japan 単結晶引上げ用Ｓｉ融液の調整方法
JPH09227275A (ja) * 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
JP2000233994A (ja) * 1999-02-10 2000-08-29 Mitsubishi Materials Silicon Corp シリコン単結晶の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HUANG X. ET AL.: "Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 33, no. 7A, 1 July 1994 (1994-07-01), pages L902 - L904 *

Also Published As

Publication number Publication date
DE112008000034B4 (de) 2020-02-27
JP5118386B2 (ja) 2013-01-16
US8580032B2 (en) 2013-11-12
US8852340B2 (en) 2014-10-07
DE112008000034T5 (de) 2009-08-13
JP2008280211A (ja) 2008-11-20
US20140033967A1 (en) 2014-02-06
US20100071612A1 (en) 2010-03-25

Similar Documents

Publication Publication Date Title
WO2008142992A1 (ja) 単結晶の製造方法
MXPA05007031A (es) Sistema y metodo de control de arranque de hvac.
WO2008131210A3 (en) System and method for water breakthrough detection and intervention in a production well
CN103192047B (zh) 连铸机结晶器冷却水自动控制系统及其控制方法
CN101126173B (zh) 单晶硅的培育工艺中溶液的液面位置监视装置
NZ596007A (en) A method of calibrating inertial sensors
WO2007103498A3 (en) Apparatus and method for predictive control of a power generation system
IN2014DN05650A (ja)
CN201922012U (zh) 方坯连铸机二冷配水先进控制装置
FR2966474B1 (fr) Procede de fabrication d'un materiau nanocristallin
JP2014036216A5 (ja)
CN102059333A (zh) 方坯连铸机二冷配水先进控制系统
WO2010056350A3 (en) Methods for casting by a float process and associated appratuses
WO2010088338A3 (en) Rapid cooling of a substrate by motion
WO2009054529A1 (ja) 石英ガラスルツボとその製造方法およびその用途
WO2012082860A3 (en) Closed-loop silicon etching control method and system
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
WO2008055067A3 (en) Method and apparatus for forming a silicon wafer
TW201447059A (zh) 將單晶直徑控制爲給定直徑的方法
CN104837780A (zh) 浮法玻璃制造装置和浮法玻璃制造方法
WO2008142993A1 (ja) 単結晶の製造方法
WO2008146724A1 (ja) シリコン単結晶の製造方法及びシリコン単結晶基板
CN104909824A (zh) 坩埚隔绝层的制造方法及其所应用的喷涂装置
CN104499999B (zh) 油气井排采的控制方法及系统
MY160227A (en) Method for treating a natural gas containing carbon dioxide

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752374

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1120080000344

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 12515725

Country of ref document: US

RET De translation (de og part 6b)

Ref document number: 112008000034

Country of ref document: DE

Date of ref document: 20090813

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08752374

Country of ref document: EP

Kind code of ref document: A1