WO2008133275A1 - 面放出型電子源および描画装置 - Google Patents

面放出型電子源および描画装置 Download PDF

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Publication number
WO2008133275A1
WO2008133275A1 PCT/JP2008/057852 JP2008057852W WO2008133275A1 WO 2008133275 A1 WO2008133275 A1 WO 2008133275A1 JP 2008057852 W JP2008057852 W JP 2008057852W WO 2008133275 A1 WO2008133275 A1 WO 2008133275A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
emission type
electron source
type electron
surface emission
Prior art date
Application number
PCT/JP2008/057852
Other languages
English (en)
French (fr)
Inventor
Akira Kojima
Hideyuki Ohyi
Original Assignee
Crestec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crestec Corporation filed Critical Crestec Corporation
Priority to KR1020097020219A priority Critical patent/KR101086901B1/ko
Priority to CN2008800118896A priority patent/CN101657875B/zh
Priority to US12/597,035 priority patent/US8232711B2/en
Priority to EP08740791A priority patent/EP2141725B1/en
Priority to AT08740791T priority patent/ATE531067T1/de
Publication of WO2008133275A1 publication Critical patent/WO2008133275A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

　本発明の面放出型電子源は、平面状の第１の電極と、第１の電極に対向して設けられた平面状の第２の電極と、第１の電極と第２の電極の間に設けられた電子通過層と、第２の電極および第１の電極に電圧を印加する電源部とを有する。電子通過層は、第１の電極から第２の電極に向かう第１の方向に伸びる量子細線が所定の間隔をあけて複数設けられているものであり、第２の電極の表面から電子が放出される。量子細線は、シリコンにより構成されているとともに、第１の方向に太さが細い部分が所定の間隔で複数形成されている。
PCT/JP2008/057852 2007-04-25 2008-04-23 面放出型電子源および描画装置 WO2008133275A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097020219A KR101086901B1 (ko) 2007-04-25 2008-04-23 면 방출형 전자원 및 묘화 장치
CN2008800118896A CN101657875B (zh) 2007-04-25 2008-04-23 面辐射型电子源和绘制装置
US12/597,035 US8232711B2 (en) 2007-04-25 2008-04-23 Surface emission type electron source and drawing device
EP08740791A EP2141725B1 (en) 2007-04-25 2008-04-23 Surface emission type electron source and drawing device
AT08740791T ATE531067T1 (de) 2007-04-25 2008-04-23 Oberflächenemissions-elektronenquelle und zeichnungseinrichtung

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007115471 2007-04-25
JP2007-115471 2007-04-25
JP2007207887A JP4122043B1 (ja) 2007-04-25 2007-08-09 面放出型電子源および描画装置
JP2007-207887 2007-08-09

Publications (1)

Publication Number Publication Date
WO2008133275A1 true WO2008133275A1 (ja) 2008-11-06

Family

ID=39704904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057852 WO2008133275A1 (ja) 2007-04-25 2008-04-23 面放出型電子源および描画装置

Country Status (7)

Country Link
US (1) US8232711B2 (ja)
EP (1) EP2141725B1 (ja)
JP (1) JP4122043B1 (ja)
KR (1) KR101086901B1 (ja)
CN (1) CN101657875B (ja)
AT (1) ATE531067T1 (ja)
WO (1) WO2008133275A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103390A (ja) * 2008-10-27 2010-05-06 Crestec Corp 相変化メモリ選択型電子源および描画装置
CN102074430B (zh) * 2010-12-03 2012-10-10 北京大学 声子助电子发射阴极和声子助电子发射器件
CN103500701B (zh) * 2013-10-18 2016-03-16 中国科学院微电子研究所 一种制备纳米器件的方法
WO2015077424A1 (en) * 2013-11-20 2015-05-28 Tel Epion Inc. Multi-step location specific process for substrate edge profile correction for gcib system
JP6532033B2 (ja) * 2015-02-20 2019-06-19 国立大学法人東京農工大学 処理装置及び薄膜の製造方法
CN113488443A (zh) * 2021-06-08 2021-10-08 电子科技大学 一种超高真空系统下的制冷型NEA GaN电子源组件结构

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150328A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 電子ビ−ム転写装置
JPH0574333A (ja) 1991-09-13 1993-03-26 Fujitsu Ltd 量子化電子線発生装置
JPH07296755A (ja) 1994-04-26 1995-11-10 Hitachi Ltd 電子線源およびこれを用いた電子線応用装置
JPH08250766A (ja) * 1995-03-09 1996-09-27 Res Dev Corp Of Japan 半導体冷電子放出素子及びこれを用いた装置
JPH1079222A (ja) 1996-09-03 1998-03-24 Nikon Corp 電子線源
JP2003045318A (ja) * 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 電界放射型電子源
JP2004127936A (ja) * 2002-10-03 2004-04-22 Hewlett-Packard Development Co Lp 集束用柱状体を有する放出器素子
JP2004206975A (ja) * 2002-12-24 2004-07-22 Matsushita Electric Works Ltd 電界放射型電子源
JP2005243632A (ja) * 2004-02-24 2005-09-08 Samsung Sdi Co Ltd 弾道電子の表面放出装置エミッタ、それを採用した電界放出表示装置及び電界放出型バックライト素子
JP2005317657A (ja) 2004-04-27 2005-11-10 Matsushita Electric Works Ltd 電子線露光装置
JP2006040725A (ja) 2004-07-27 2006-02-09 Matsushita Electric Works Ltd 電子線露光用電子源
JP2006120410A (ja) * 2004-10-20 2006-05-11 Canon Anelva Corp 電子ビーム発生装置
JP2006147518A (ja) 2004-10-22 2006-06-08 National Univ Corp Shizuoka Univ 窒化物半導体共鳴トンネル電子放出素子
JP2006179890A (ja) * 2004-12-20 2006-07-06 Samsung Electronics Co Ltd 電子ビームリソグラフィシステムの電磁集束法
JP2007109637A (ja) * 2005-10-12 2007-04-26 Samsung Sdi Co Ltd 電子放出部を備えたプラズマディスプレイパネル

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* Cited by examiner, † Cited by third party
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US5362972A (en) * 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
JP2002279892A (ja) 2001-03-21 2002-09-27 Ricoh Co Ltd 電子放出素子の製造方法、電子放出素子、帯電装置及び画像形成装置
KR100625836B1 (ko) * 2002-03-08 2006-09-20 마츠시다 덴코 가부시키가이샤 양자장치
JP2003331710A (ja) * 2002-05-15 2003-11-21 Nippon Hoso Kyokai <Nhk> 電界放出型電子源のゲート電極およびその製造方法
DE10250868B8 (de) * 2002-10-31 2008-06-26 Qimonda Ag Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors
CA2522358A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
KR100779090B1 (ko) * 2006-07-18 2007-11-27 한국전자통신연구원 아연 산화물을 이용하는 가스 감지기 및 그 제조 방법
DE202007018948U1 (de) * 2006-07-18 2009-12-31 University Of Southern California, Los Angeles Elektroden mit Nanoröhrchen für organische optoelektronische Einrichtung

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150328A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 電子ビ−ム転写装置
JPH0574333A (ja) 1991-09-13 1993-03-26 Fujitsu Ltd 量子化電子線発生装置
JPH07296755A (ja) 1994-04-26 1995-11-10 Hitachi Ltd 電子線源およびこれを用いた電子線応用装置
JPH08250766A (ja) * 1995-03-09 1996-09-27 Res Dev Corp Of Japan 半導体冷電子放出素子及びこれを用いた装置
JPH1079222A (ja) 1996-09-03 1998-03-24 Nikon Corp 電子線源
JP2003045318A (ja) * 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 電界放射型電子源
JP2004127936A (ja) * 2002-10-03 2004-04-22 Hewlett-Packard Development Co Lp 集束用柱状体を有する放出器素子
JP2004206975A (ja) * 2002-12-24 2004-07-22 Matsushita Electric Works Ltd 電界放射型電子源
JP2005243632A (ja) * 2004-02-24 2005-09-08 Samsung Sdi Co Ltd 弾道電子の表面放出装置エミッタ、それを採用した電界放出表示装置及び電界放出型バックライト素子
JP2005317657A (ja) 2004-04-27 2005-11-10 Matsushita Electric Works Ltd 電子線露光装置
JP2006040725A (ja) 2004-07-27 2006-02-09 Matsushita Electric Works Ltd 電子線露光用電子源
JP2006120410A (ja) * 2004-10-20 2006-05-11 Canon Anelva Corp 電子ビーム発生装置
JP2006147518A (ja) 2004-10-22 2006-06-08 National Univ Corp Shizuoka Univ 窒化物半導体共鳴トンネル電子放出素子
JP2006179890A (ja) * 2004-12-20 2006-07-06 Samsung Electronics Co Ltd 電子ビームリソグラフィシステムの電磁集束法
JP2007109637A (ja) * 2005-10-12 2007-04-26 Samsung Sdi Co Ltd 電子放出部を備えたプラズマディスプレイパネル

Also Published As

Publication number Publication date
JP2008294389A (ja) 2008-12-04
ATE531067T1 (de) 2011-11-15
EP2141725B1 (en) 2011-10-26
CN101657875B (zh) 2011-06-29
US8232711B2 (en) 2012-07-31
US20100072875A1 (en) 2010-03-25
KR20090119778A (ko) 2009-11-19
EP2141725A4 (en) 2010-09-15
JP4122043B1 (ja) 2008-07-23
CN101657875A (zh) 2010-02-24
EP2141725A1 (en) 2010-01-06
KR101086901B1 (ko) 2011-11-25

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