WO2008126821A1 - へテロ接合を有する半導体装置 - Google Patents
へテロ接合を有する半導体装置 Download PDFInfo
- Publication number
- WO2008126821A1 WO2008126821A1 PCT/JP2008/056869 JP2008056869W WO2008126821A1 WO 2008126821 A1 WO2008126821 A1 WO 2008126821A1 JP 2008056869 W JP2008056869 W JP 2008056869W WO 2008126821 A1 WO2008126821 A1 WO 2008126821A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- hetero junction
- semiconductor device
- plane
- hetero
- junction
- Prior art date
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- 125000005842 heteroatom Chemical group 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 150000004767 nitrides Chemical class 0.000 abstract 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
Abstract
半導体装置10は、バンドギャップの幅が異なる2種類の窒化物半導体で構成されている第1ヘテロ接合40bと、その第1ヘテロ接合40bに電気的に接続可能であるとともにバンドギャップの幅が異なる2種類の窒化物半導体で構成されている第2ヘテロ接合50bと、第2ヘテロ接合50bに対向しているゲート電極58を備えている。第1ヘテロ接合40bはc面であり、第2ヘテロ接合50bはa面又はm面である。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/595,253 US8299498B2 (en) | 2007-04-09 | 2008-04-07 | Semiconductor device having hetero junction |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007101346A JP4938531B2 (ja) | 2007-04-09 | 2007-04-09 | 半導体装置 |
JP2007-101346 | 2007-04-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008126821A1 true WO2008126821A1 (ja) | 2008-10-23 |
Family
ID=39863918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056869 WO2008126821A1 (ja) | 2007-04-09 | 2008-04-07 | へテロ接合を有する半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8299498B2 (ja) |
JP (1) | JP4938531B2 (ja) |
WO (1) | WO2008126821A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012063529A1 (ja) * | 2010-11-08 | 2012-05-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2015018998A (ja) * | 2013-07-12 | 2015-01-29 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
Families Citing this family (9)
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JP5504660B2 (ja) * | 2009-03-24 | 2014-05-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5853187B2 (ja) * | 2011-05-30 | 2016-02-09 | パナソニックIpマネジメント株式会社 | スイッチ装置 |
KR20130014850A (ko) * | 2011-08-01 | 2013-02-12 | 삼성전자주식회사 | 파워소자의 제조방법 |
JP2015099903A (ja) * | 2013-10-17 | 2015-05-28 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
KR102137749B1 (ko) * | 2014-03-06 | 2020-07-24 | 엘지이노텍 주식회사 | 전력 반도체 소자 |
JP6444045B2 (ja) * | 2014-04-02 | 2018-12-26 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP6600984B2 (ja) * | 2015-05-18 | 2019-11-06 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP6666305B2 (ja) | 2017-06-09 | 2020-03-13 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN112993007A (zh) * | 2019-12-13 | 2021-06-18 | 南通尚阳通集成电路有限公司 | 超结结构及超结器件 |
Citations (6)
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JP2006100820A (ja) * | 2004-09-24 | 2006-04-13 | Internatl Rectifier Corp | パワー半導体デバイス |
JP2006245564A (ja) * | 2005-02-07 | 2006-09-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2008004720A (ja) * | 2006-06-22 | 2008-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体を用いたヘテロ構造電界効果トランジスタ |
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JP4564510B2 (ja) * | 2007-04-05 | 2010-10-20 | 株式会社東芝 | 電力用半導体素子 |
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2007
- 2007-04-09 JP JP2007101346A patent/JP4938531B2/ja active Active
-
2008
- 2008-04-07 WO PCT/JP2008/056869 patent/WO2008126821A1/ja active Application Filing
- 2008-04-07 US US12/595,253 patent/US8299498B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06163928A (ja) * | 1992-11-20 | 1994-06-10 | Res Dev Corp Of Japan | トンネル注入半導体装置 |
JP2002198516A (ja) * | 2000-12-26 | 2002-07-12 | Fujitsu Ltd | Hemt |
JP2004260140A (ja) * | 2003-02-06 | 2004-09-16 | Toyota Central Res & Dev Lab Inc | Iii族窒化物半導体を有する半導体素子 |
JP2006100820A (ja) * | 2004-09-24 | 2006-04-13 | Internatl Rectifier Corp | パワー半導体デバイス |
JP2006245564A (ja) * | 2005-02-07 | 2006-09-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2008004720A (ja) * | 2006-06-22 | 2008-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体を用いたヘテロ構造電界効果トランジスタ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012063529A1 (ja) * | 2010-11-08 | 2012-05-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
US8890239B2 (en) | 2010-11-08 | 2014-11-18 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for producing the same |
JP2015018998A (ja) * | 2013-07-12 | 2015-01-29 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100117119A1 (en) | 2010-05-13 |
JP4938531B2 (ja) | 2012-05-23 |
US8299498B2 (en) | 2012-10-30 |
JP2008258514A (ja) | 2008-10-23 |
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