WO2008111303A1 - 半導体デバイス、その製造方法および光ピックアップモジュール - Google Patents

半導体デバイス、その製造方法および光ピックアップモジュール Download PDF

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Publication number
WO2008111303A1
WO2008111303A1 PCT/JP2008/000512 JP2008000512W WO2008111303A1 WO 2008111303 A1 WO2008111303 A1 WO 2008111303A1 JP 2008000512 W JP2008000512 W JP 2008000512W WO 2008111303 A1 WO2008111303 A1 WO 2008111303A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
manufacturing
optical pickup
pickup module
dam
Prior art date
Application number
PCT/JP2008/000512
Other languages
English (en)
French (fr)
Inventor
Junya Furuyashiki
Syouzou Moribe
Hiroki Utatsu
Noriyuki Yoshikawa
Toshiyuki Fukuda
Masanori Minamio
Hiroyuki Ishida
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN200880003392XA priority Critical patent/CN101647115B/zh
Priority to US12/525,499 priority patent/US20100001174A1/en
Publication of WO2008111303A1 publication Critical patent/WO2008111303A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G11B7/1275—Two or more lasers having different wavelengths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/1461—MEMS
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/16315—Shape

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　全体の大きさを小型にでき、特に略矩形のパッケージの４辺のうち対向する一対の２辺の長さを小さくできる半導体デバイスを提供する。 　半導体デバイス１は略矩形のパッケージ５０に半導体素子１０を搭載している。搭載面６２の一対の対向する外縁には第１のリブ７０，７０が上方に突き出すように設けられており、その上面７０ｂには蓋体９０の外縁が載せられて接着剤８５によって固定されている。第１のリブ上面７０ｂの外縁にはダム８０が設けられており、接着剤８５が蓋体９０の側面からダム８０まで連続して存している。
PCT/JP2008/000512 2007-03-14 2008-03-10 半導体デバイス、その製造方法および光ピックアップモジュール WO2008111303A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880003392XA CN101647115B (zh) 2007-03-14 2008-03-10 半导体装置及其制造方法、拾光模块
US12/525,499 US20100001174A1 (en) 2007-03-14 2008-03-10 Semiconductor device, its manufacturing method and optical pickup module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-064795 2007-03-14
JP2007064795A JP5132957B2 (ja) 2007-03-14 2007-03-14 半導体デバイス、その製造方法および光ピックアップモジュール

Publications (1)

Publication Number Publication Date
WO2008111303A1 true WO2008111303A1 (ja) 2008-09-18

Family

ID=39759246

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000512 WO2008111303A1 (ja) 2007-03-14 2008-03-10 半導体デバイス、その製造方法および光ピックアップモジュール

Country Status (4)

Country Link
US (1) US20100001174A1 (ja)
JP (1) JP5132957B2 (ja)
CN (1) CN101647115B (ja)
WO (1) WO2008111303A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222104A (ja) * 2010-04-14 2011-11-04 Sharp Corp 受光素子、光ピックアップ装置およびその製造方法
CN102176432B (zh) * 2011-02-24 2012-11-21 北京时代民芯科技有限公司 一种数字化三维组装结构设计的光探测器
JP6743880B2 (ja) * 2016-03-02 2020-08-19 ソニー株式会社 発光装置及び発光装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064292A (ja) * 2003-08-14 2005-03-10 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
JP2006504279A (ja) * 2002-10-25 2006-02-02 フリースケール セミコンダクター インコーポレイテッド イメージセンサ装置

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2891385B2 (ja) * 1991-01-30 1999-05-17 新光電気工業株式会社 電子部品収納装置とその製造方法
US6125087A (en) * 1996-11-07 2000-09-26 Hitachi, Ltd. Optical pickup for optical disk apparatus
US5949655A (en) * 1997-09-09 1999-09-07 Amkor Technology, Inc. Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
US6753922B1 (en) * 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
JP2004129089A (ja) * 2002-10-04 2004-04-22 Toyo Commun Equip Co Ltd 表面実装型圧電発振器、その製造方法、及びシート状基板母材
JP3838572B2 (ja) * 2003-09-03 2006-10-25 松下電器産業株式会社 固体撮像装置およびその製造方法
JP4315833B2 (ja) * 2004-02-18 2009-08-19 三洋電機株式会社 回路装置
JP2005327403A (ja) * 2004-05-14 2005-11-24 Sony Corp 光ピックアップ及び光学記録媒体記録再生装置
JP2006197547A (ja) * 2004-12-15 2006-07-27 Tokyo Denpa Co Ltd 圧電発振器の製造方法、圧電発振器シート基板、及び圧電発振器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006504279A (ja) * 2002-10-25 2006-02-02 フリースケール セミコンダクター インコーポレイテッド イメージセンサ装置
JP2005064292A (ja) * 2003-08-14 2005-03-10 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法

Also Published As

Publication number Publication date
CN101647115A (zh) 2010-02-10
US20100001174A1 (en) 2010-01-07
JP2008227231A (ja) 2008-09-25
JP5132957B2 (ja) 2013-01-30
CN101647115B (zh) 2012-04-25

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