WO2008111304A1 - 半導体デバイスの製造方法、半導体デバイスおよび光ピックアップモジュール - Google Patents

半導体デバイスの製造方法、半導体デバイスおよび光ピックアップモジュール Download PDF

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Publication number
WO2008111304A1
WO2008111304A1 PCT/JP2008/000514 JP2008000514W WO2008111304A1 WO 2008111304 A1 WO2008111304 A1 WO 2008111304A1 JP 2008000514 W JP2008000514 W JP 2008000514W WO 2008111304 A1 WO2008111304 A1 WO 2008111304A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
adjoining
connection
optical pickup
separated
Prior art date
Application number
PCT/JP2008/000514
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English (en)
French (fr)
Inventor
Junya Furuyashiki
Syouzou Moribe
Hiroki Utatsu
Noriyuki Yoshikawa
Toshiyuki Fukuda
Masanori Minamio
Hiroyuki Ishida
Original Assignee
Panasonic Corporation
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Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/525,217 priority Critical patent/US20100091633A1/en
Publication of WO2008111304A1 publication Critical patent/WO2008111304A1/ja

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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • G11B7/123Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • GPHYSICS
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    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

 全体の大きさを小型にでき、特に略矩形のパッケージの4辺のうち対向する一対の2辺の長さを小さくできる半導体デバイスを効率よく製造する方法を提供する。  平板であって、接続電極75、内部配線76、外部接続部77が設けられた基板用原板130を用意する。この基板用原板130の隣り合う接続電極75間の部分を切削し、溝55を形成する。この溝55に複数の半導体素子10を搭載し、電極パッド20と接続電極75とを金属細線22で接続し、さらに透明な蓋体90を各半導体素子10の上方を覆うようにスペーサ80’の上に載せて接着させる。この後隣り合う溝55間において2列に並ぶ接続電極75の列間を切断して切り離す。さらに隣り合う半導体素子10の間を切り離す。
PCT/JP2008/000514 2007-03-14 2008-03-10 半導体デバイスの製造方法、半導体デバイスおよび光ピックアップモジュール WO2008111304A1 (ja)

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JP2007-064806 2007-03-14
JP2007064806A JP2008227232A (ja) 2007-03-14 2007-03-14 半導体デバイスの製造方法、半導体デバイスおよび光ピックアップモジュール

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KR102588807B1 (ko) * 2016-12-15 2023-10-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지 및 그 제조방법, 자동 초점 장치
KR20180088067A (ko) * 2017-01-26 2018-08-03 주식회사 아모센스 센서 패키지용 윈도우 커버
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