WO2008105597A1 - Électrode transparente pour pile solaire et procédé de fabrication associé - Google Patents

Électrode transparente pour pile solaire et procédé de fabrication associé Download PDF

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Publication number
WO2008105597A1
WO2008105597A1 PCT/KR2008/001007 KR2008001007W WO2008105597A1 WO 2008105597 A1 WO2008105597 A1 WO 2008105597A1 KR 2008001007 W KR2008001007 W KR 2008001007W WO 2008105597 A1 WO2008105597 A1 WO 2008105597A1
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WO
WIPO (PCT)
Prior art keywords
transparent
layer
metal oxide
transparent electrode
solar cell
Prior art date
Application number
PCT/KR2008/001007
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English (en)
Inventor
Chong-Chan Lee
Jong-Bok Kim
Ho-Gi Bae
Original Assignee
Dongjin Semichem Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co., Ltd. filed Critical Dongjin Semichem Co., Ltd.
Priority to CN2008800065422A priority Critical patent/CN101622721B/zh
Publication of WO2008105597A1 publication Critical patent/WO2008105597A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a transparent electrode for a solar cell and a manufacturing method thereof, and more particularly, to a high quality transparent electrode for a solar cell which minimizes a lowering of light transmittance, sharply reduces specific resistance and improves a surface roughness to thereby enhance efficiency of a solar cell and provide a high efficiency solar cell, and a manufacturing method thereof.
  • Background Art
  • a conductive, transparent electrode is widely employed for various technical applications and also required to be developed for various areas, and particularly, for areas such as solar cells and display elements.
  • a transparent electrode which provides high conductivity and light transmittance rate is mainly used in a solar cell producing electricity with sunlight and in a display element displaying a light signal generated from a substrate to the outside.
  • the transparent electrode is manufactured by depositing a conductive material such as ITO (indium tin oxide) on an insulating base layer such as glass by sputtering.
  • a transparent electrode which is employed in an OLED requires a conductive material layer to have lower specific resistance and higher planarization because of characteristics of the OLED.
  • higher planarization is more necessary than lower specific resistance since the OLED layer is thin.
  • photoelectric conversion efficiency is most critical.
  • the conductive material has low specific resistance together with high light transmittance because of the characteristics of the application area.
  • a conductive material layer which is deposited on a transparent base layer should have lower specific resistance and lower surface roughness while providing higher transmittance.
  • a conventional amorphous ITO has a high specific resistance while having high planarization.
  • polycrystalline ITO has a lower specific resistance than the amorphous ITO does, but still higher.
  • a surface of the polycrystalline ITO is very rough.
  • a transparent electrode which is transparent and conductive to be employed in a solar cell, the transparent electrode comprising a transparent base layer; a first polycrystalline transparent metal oxide layer which is formed on the transparent base layer; a metal layer which is formed on the first polycrystalline transparent metal oxide layer; and a second polycrystalline transparent metal oxide layer which is formed on the metal layer.
  • a solar cell which comprises the transparent electrode for the solar cell, and a counter electrode facing the transparent electrode.
  • a manufacturing method of a transparent electrode for a solar cell comprising providing a transparent base layer; forming a first polycrystalline transparent metal oxide layer on the transparent base layer; forming a metal layer on the first polycrystalline transparent metal oxide layer; and forming a second polycrystalline transparent metal oxide layer on the metal layer.
  • the present invention provides a transparent electrode for a solar cell, a solar cell including the same and a manufacturing method thereof which minimizes a lowering of light transmittance, sharply reduces specific resistance and improves a surface roughness to thereby enhance efficiency of a solar cell and provide a high-efficiency solar cell.
  • FIG. 1 is a sectional view of a transparent electrode according to an exemplary embodiment of the present invention.
  • FIG. 2 is a sectional view of a dye- sensitized solar cell which employs the transparent electrode according to the present invention
  • FIG. 3 is a surface of the transparent electrode for the solar cell according to the present invention, captured by a scanning microscope;
  • FIG. 4 is a surface of a transparent electrode according to a comparative embodiment, captured by a scanning microscope. Mode for the Invention
  • the present invention relates to a transparent electrode for a solar cell which is transparent and conductive.
  • the transparent electrode includes a transparent base layer 10, a first poly crystalline transparent metal oxide layer 20 formed on the transparent base layer 10, a metal layer 30 formed on the first poly crystalline transparent metal oxide layer 20 and a second polycrystalline transparent metal oxide layer 40 formed on the metal layer 30.
  • a solar cell includes a transparent electrode through which sunlight is incident, and a counter electrode which faces the transparent electrode.
  • the transparent electrode should be both transparent and conductive to flow electricity therein.
  • the transparent electrode is manufactured by a conductive material. If the transparent electrode material includes an insulating material, a conductive material is coated on the insulating material.
  • the transparent electrode includes the transparent base layer 10, the first polycrystalline transparent metal oxide layer 20 formed on the transparent base layer 10, the metal layer 30 formed on the first polycrystalline transparent metal oxide layer 20 and the second polycrystalline transparent metal oxide layer 40 formed on the metal layer 30.
  • electrical conductivity of the conductive material layer is maximized by using a metal having a lower specific resistance.
  • oxide layers 20 and 40 are formed on and under the metal layer 30 to reflect metal reflective light again, i.e., the metal layer 30 is sandwiched between the oxide layers 20 and 40 to minimize the lowering of transmittance due to the introduction of the metal layer 30, highly-electrical conductive multiple layers may be manufactured.
  • the transparent base layer 10 may include various known transparent materials to be employed in a solar cell, e.g., an insulating body or a conductive body.
  • the transparent base layer 10 includes glass which has structural and chemical stability.
  • the oxide layer 20 is formed on the transparent base layer 10 to apply high conductivity to the transparent base layer 10, to provide a surface to form the metal layer 30 thereon and to prevent the metal layer 30 from being introduced thereto.
  • the oxide layer 20 forms the first polycrystalline transparent metal oxide layer 20 including crystalloid rather than amorphous.
  • the transparent metal oxide may include various known metal oxides which are transparent and conductive. More specifically, the transparent metal oxide may include e.g., tin oxide having antimony or fluorine as a dopant, zinc oxide having aluminium or potassium as a dopant, ITO having tin as a dopant or crystal In-W-O of Japanese Patent First Publication No. 2004-43851.
  • the transparent metal oxide may include ITO or FTO which is widely used, convenient and highly-conductive, and more preferably, ITO. That is, the transparent metal oxide layer (film) which acts as an antireflection layer due to the introduction of the metal layer 30 includes ITO widely used for an existing transparent conductive layer.
  • the ITO layer provides high transmittance in the visible ray area while having a low specific resistance.
  • the ITO layer has good surface planarization and highly refractive index by controlling the deposition condition. Thus, when the metal layer is 30 formed later, it is not broken, but continuous even if it is thin. Further, the specific resistance is lowered. Thus, the ITO layer is appropriate for the antireflection layer of the metal layer 30.
  • the first polycrystalline transparent metal oxide layer 20 influences on optical activity to enhance transmittance rate, prevents diffusion of a substrate material and acts as a nucleation modification layer influencing on initial nuclei generation of metal, as well as playing a critical role in determining planarization of the overall sandwich configuration.
  • the ITO transparent metal oxide layer may be formed by various known deposition methods, e.g., vacuum deposition, ion plating, sputtering, a method of applying a liquid to form a transparent conductive layer, etc.
  • the ITO transparent metal oxide layer is preferably formed by sputtering to control the thickness and for conveniences.
  • the ITO transparent metal oxide layer should include polycrystalline to lower the specific resistance and to prevent diffusion and coupling of the metal layer 30 and the oxide layers 20 and 40. Generally, amorphous ITO is annealed into polycrystalline.
  • the thickness of the first polycrystalline transparent metal oxide layer 20 ranges from 250 to 800 A to secure sufficient transmittance and to improve conductivity by forming the metal layer 30 within a range not damaging the transmittance.
  • the surface roughness does not deteriorate.
  • the polycrystalline ITO has anisotropy having a rapid crystal growth rate in the direction (400), the surface roughness deteriorates and the transmittance is lowered or the metal layer 30 becomes thicker if polycrystalline grows too much.
  • the thickness of the first polycrystalline transparent metal oxide layer 20 is preferably within the foregoing range. [24] As shown in FIG. 1, the metal layer 30 is formed on the first polycrystalline transparent metal oxide layer 20.
  • the metal layer 30 As a specific resistance of the conductive material of the transparent base layer 10 is sharply reduced by the metal layer 30, a thicker metal layer is better in an aspect of electrical conductivity. However, if the metal layer 30 is too thick, the transmittance of the transparent electrode is lowered. Thus, the thickness of the metal layer 30 is preferably a maximum of 500 A more preferably 50 to 150 A and most preferably around 100 A to secure sufficient conductivity and transmittance. After all, most of electrical conductivity is implemented by the metal layer 30, and thus the metal layer 30 should be planar, complete and continuous.
  • the metal layer 30 may include various known metals which are highly conductive.
  • the metal layer 30 includes a material that is selected at least one from the group consisting of silver (Ag), silver alloy, platinum (Pt), platinum ally, gold (Au), gold alloy, copper (Cu), copper alloy and a mixture (alloy) thereof which is highly conductive and easily deposited. More preferably, the metal layer 30 includes a material that is selected at least one from the group consisting of silver (Ag), platinum (Pt), gold (Au), copper (Cu) and a mixture (alloy) thereof, and most preferably silver (Ag) which is highly conductive. If the metal layer 30 includes silver that is highly conductive and absorbs less visible rays, the transparent electrode for the solar cell has sufficient transmittance rate with multiple layers.
  • the metal layer 30 may be formed by various known deposition methods, and preferably by sputtering to be manufactured without difficulty and to adjust the thickness.
  • the metal layer 30 is formed by room temperature deposition process without heating the base layer to restrain the coarsening of the first polycrystalline metal oxide layer 20 and interaction between the metal and metal oxide and to lower the specific resistance.
  • the second polycrystalline transparent metal oxide layer 40 may be further formed on the metal layer 30 by the same method as that of the first polycrystalline transparent metal oxide layer 20 to thereby protect and contain the metal layer 30.
  • the second polycrystalline transparent metal oxide layer 40 acts as an antireflection layer optically and enhances transmittance rate as well as protecting the metal layer 30.
  • the second polycrystalline transparent metal oxide layer 40 may include polycrystalline to improve electrical conductivity.
  • the second polycrystalline transparent metal oxide layer 40 is required to have a planar surface to form other layers later without difficulty and to secure transmittance.
  • the thickness of the second polycrystalline transparent metal oxide layer 40 ranges from 250 to 800 A not to lower the surface roughness and to secure the transmittance.
  • the present invention provides a solar cell which includes the transparent electrode according to the present invention.
  • the solar cell includes the transparent electrode for the solar cell, and a counter electrode facing the transparent electrode.
  • the solar cell includes various known solar cells having a transparent electrode to which sunlight is incident.
  • the solar cell includes a silicon type solar cell, a dye-sensitized solar cell and the like. The configuration of the foregoing solar cells is known in the art, and thus detailed descriptions will be omitted.
  • FIG. 2 illustrates a dye-sensitized solar cell which includes the transparent electrode according to the present invention.
  • the solar cell includes the transparent electrode having i) the transparent base layer 10, ii) the conductive layer (20+30+40) including the first polycrystalline transparent metal oxide layer 20, the metal layer 30 and the second polycrystalline transparent metal oxide layer 40, and the counter electrode (70+80+90) (a catalyst metal layer 70 including platinum, a conductive coating layer 80 and a glass layer 90 as a base of the counter electrode).
  • a dye-sensitized solar cell may further include a porous layer 50 including a dye and an electrolyte layer 60 formed on the porous layer 50.
  • the present invention provides a manufacturing method of the transparent electrode for a solar cell.
  • the manufacturing method of the transparent electrode for the solar cell according to the present invention includes an operation of providing a transparent base layer, an operation of forming the first polycrystalline transparent metal oxide layer on the transparent base layer, an operation of forming the metal layer on the first polycrystalline transparent metal oxide layer and an operation of forming the second polycrystalline transparent metal oxide layer on the metal layer.
  • the transparent metal oxide layers 20 and 40 and the metal layer 30 are described as above.
  • the transparent metal oxide layers 20 and 40 include ITO and the metal layer 30 includes silver (Ag).
  • the metal layer 30 may be formed while the base layer 10 is at room temperatures, to thereby lower the specific resistance and manufacture high efficiency solar cell.
  • the ITO layer may be formed by annealing amorphous ITO into polycrystalline. More preferably, the ITO layer is formed while the base layer 10 has heat of 200 + 50 0 C. Under such circumstances, the ITO layer is manufactured without difficulty, grows properly and secures appropriate roughness.
  • the method of forming the transparent metal oxide layers 20 and 40 and the metal layer 30 may include various known methods, and preferably a sputtering vacuum deposition method as described above.
  • the thickness of the metal layer 30 is a maximum of 500 A, and more preferably 50 to 150 A.
  • the thickness of the first poly crystalline transparent metal oxide layer 20 is 250 to 800 A and that of the second polycrystalline transparent metal oxide layer 40 is 250 to 800 A.
  • the overall transparent electrode is preferably annealed after the foregoing manufacturing process.
  • the annealing condition may include known annealing conditions.
  • the ITO metal oxide is heat treated at 220 ⁇ 50 0C for 30 minutes to 2 hours to restrain the coarsening of the particle size and surface reaction and to lower the specific resistance.
  • a sample was prepared on a glass base with the configuration of layers (p-ITO refers to polycrystalline ITO), thickness condition, deposition temperature condition and annealing treatment condition as shown in Table 1.
  • p-ITO refers to polycrystalline ITO
  • thickness condition As shown in Table 1, a silver (Ag) layer was deposited at room temperatures. After the sample was provided, surface resistance, specific resistance, (light) transmittance and surface roughness were measured and shown in Table 2.
  • the transparent electrodes according to the exemplary embodiments 1 and 2 have much lower surface resistance and specific resistance and improve electrical conductivity more than that according to the comparative embodiment. Also, the transparent electrodes according to the exemplary embodiments 1 and 2 rarely lose transmittance, and improve surface roughness. As shown in FIG. 3, the transparent electrode according to the exemplary embodiment 1 has a minute configuration in which crystal grains are not coarsened while the transparent electrode according to the comparative embodiment has larger crystal grains and a higher roughness value.
  • the present invention provides a transparent electrode for a solar cell, a solar cell including the same and a manufacturing method thereof which minimizes a lowering of light transmittance, sharply reduces specific resistance and improves a surface roughness to thereby enhance efficiency of a solar cell and provide a high-efficiency solar cell.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à une électrode transparente pour pile solaire et à un procédé de fabrication associé, et plus précisément à une électrode transparente qui est transparente, conductrice et conçue pour être utilisée dans une pile solaire, et à un procédé associé. L'électrode transparente selon l'invention comprend : une couche de base transparente; une première couche d'oxyde métallique transparente polycristalline, qui est formée sur ladite couche de base transparente; une couche métallique, qui est formée sur la première couche d'oxyde métallique transparente polycristalline; et une seconde couche d'oxyde métallique transparente polycristalline, qui est formée sur la couche métallique. Ainsi, l'électrode transparente selon l'invention réduit au minimum la baisse de la transmittance, réduit considérablement la résistance spécifique et améliore la rugosité de surface, ce qui permet d'améliorer l'efficacité d'une pile solaire et d'obtenir une pile solaire à haute efficacité.
PCT/KR2008/001007 2007-02-28 2008-02-21 Électrode transparente pour pile solaire et procédé de fabrication associé WO2008105597A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008800065422A CN101622721B (zh) 2007-02-28 2008-02-21 太阳能电池用透明电极及其制造方法

Applications Claiming Priority (2)

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KR10-2007-0020487 2007-02-28
KR1020070020487A KR101352779B1 (ko) 2007-02-28 2007-02-28 태양전지용 투명전극 및 그 제조방법

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WO2008105597A1 true WO2008105597A1 (fr) 2008-09-04

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TW (1) TWI456772B (fr)
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US10490317B2 (en) 2015-05-15 2019-11-26 Lg Chem, Ltd. Conductive laminate and transparent electrode including same

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KR101051662B1 (ko) * 2009-03-27 2011-07-26 한국과학기술원 휨 특성이 뛰어난 투명 전도막, 및 그것을 이용한 투명 전극 및 유기 전자 소자
TWI398008B (zh) * 2009-06-24 2013-06-01 Univ Nat Chunghsing Solar cell and its production method
CN101908582A (zh) * 2010-06-29 2010-12-08 通用光伏能源(烟台)有限公司 一种透光型薄膜太阳能电池组件的制作方法
CN102479844A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 用于阻隔红外光的薄膜太阳能电池组成结构
JP5913809B2 (ja) * 2011-01-05 2016-04-27 リンテック株式会社 透明電極基板、その製造方法、該透明電極基板を有する電子デバイス及び太陽電池
US9257579B2 (en) 2012-07-30 2016-02-09 Electronics And Telecommunications Research Institute Electronic devices and method of fabricating the same
KR101541517B1 (ko) 2014-03-26 2015-08-03 부산대학교 산학협력단 단결정 구리를 이용한 나노 망사 다층 구조의 투명전극 및 그 제조방법
CN104916709B (zh) * 2015-05-29 2017-08-08 中山大学 一种结构为氧化物‑金属多层膜/硅基太阳电池
CN105449106B (zh) * 2015-12-28 2018-10-23 中国科学院重庆绿色智能技术研究院 一种基于超薄金属的透明电极及其制备方法
CN106847940A (zh) * 2017-02-04 2017-06-13 江苏神科新能源有限公司 一种透明导电叠层和硅基异质结太阳能电池
CN112234106A (zh) * 2019-06-28 2021-01-15 成都珠峰永明科技有限公司 金属tco叠层薄膜及其制备方法和hit太阳能电池
CN113421822B (zh) * 2021-06-16 2024-05-07 华能新能源股份有限公司 一种透明导电电极及其低温制备方法和应用
KR102625556B1 (ko) * 2021-10-27 2024-01-15 인천대학교 산학협력단 다중층의 전면전극을 갖는 투명태양전지 및 그 제조방법

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TWI456772B (zh) 2014-10-11
CN101622721A (zh) 2010-01-06
KR101352779B1 (ko) 2014-01-16
TW200840061A (en) 2008-10-01
CN101622721B (zh) 2011-06-01
KR20080079891A (ko) 2008-09-02

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