WO2008102619A1 - 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 - Google Patents

有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 Download PDF

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Publication number
WO2008102619A1
WO2008102619A1 PCT/JP2008/051371 JP2008051371W WO2008102619A1 WO 2008102619 A1 WO2008102619 A1 WO 2008102619A1 JP 2008051371 W JP2008051371 W JP 2008051371W WO 2008102619 A1 WO2008102619 A1 WO 2008102619A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
electrode
Prior art date
Application number
PCT/JP2008/051371
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English (en)
French (fr)
Inventor
Takeshi Hakii
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to US12/449,568 priority Critical patent/US8030648B2/en
Priority to JP2009500124A priority patent/JPWO2008102619A1/ja
Priority to EP08710630A priority patent/EP2113944A4/en
Publication of WO2008102619A1 publication Critical patent/WO2008102619A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明は、簡便な方法によりスイッチング特性が良好で安定した有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法を提供する。この有機薄膜トランジスタは、基板の上に、少なくともソース電極と、ドレイン電極と、該ソース電極及び該ドレイン電極とを連結する有機半導体と、ゲート電極及び該有機半導体と該ゲート電極との間にある複数の膜で構成される絶縁膜とを有し、かつ下記一般式（Ｉ）で表されるメルカプト基を有する化合物を構成中に含有していることを特徴とする。 　一般式（Ｉ）　（Ｒ）n－Ｓｉ（Ａ）3-n－（Ｂ） 〔式中、Ｒは炭素原子数８以下のアルキル基を表し、Ａはアルコキシ基またはハロゲン原子を表し、ＢはＳＨ基を含む置換基を表し、ｎは０～２の整数を表す。〕
PCT/JP2008/051371 2007-02-23 2008-01-30 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 WO2008102619A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/449,568 US8030648B2 (en) 2007-02-23 2008-01-30 Organic thin film transistor and organic thin film transistor manufacturing process
JP2009500124A JPWO2008102619A1 (ja) 2007-02-23 2008-01-30 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
EP08710630A EP2113944A4 (en) 2007-02-23 2008-01-30 ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007043539 2007-02-23
JP2007-043539 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008102619A1 true WO2008102619A1 (ja) 2008-08-28

Family

ID=39709898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051371 WO2008102619A1 (ja) 2007-02-23 2008-01-30 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法

Country Status (4)

Country Link
US (1) US8030648B2 (ja)
EP (1) EP2113944A4 (ja)
JP (1) JPWO2008102619A1 (ja)
WO (1) WO2008102619A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010140439A1 (ja) * 2009-06-04 2010-12-09 コニカミノルタホールディングス株式会社 電子ペーパー用回路基板の製造方法及び有機薄膜トランジスタ素子の製造方法
WO2020100710A1 (ja) * 2018-11-16 2020-05-22 株式会社ニコン パターン形成方法、トランジスタの製造方法及びパターン形成用フィルム

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2959867B1 (fr) 2010-05-05 2013-08-16 Commissariat Energie Atomique Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif
JP2012038924A (ja) * 2010-08-06 2012-02-23 Sony Corp 半導体装置、表示装置、および電子機器
US9627445B2 (en) * 2013-12-05 2017-04-18 Infineon Technologies Dresden Gmbh Optoelectronic component and a method for manufacturing an optoelectronic component
CN106653812B (zh) * 2016-12-20 2019-10-11 武汉华星光电技术有限公司 柔性显示面板的制作方法

Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2001316872A (ja) 2000-05-10 2001-11-16 Kunio Mori 導電性金属についての表面機能化の方法
JP2003318190A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp 半導体装置の製造方法、電気光学装置の製造方法、電子機器
JP2005051151A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 導電層の製造方法、導電層を有する基板、および電子デバイス
JP2005072188A (ja) 2003-08-22 2005-03-17 Univ Of Tokyo 有機トランジスタの製造方法、及び有機トランジスタ
JP2005286158A (ja) * 2004-03-30 2005-10-13 Seiko Epson Corp パターン形成方法、電子デバイス及びその製造方法並びに電子機器
JP2006059896A (ja) * 2004-08-18 2006-03-02 Sony Corp 電界効果型トランジスタ
JP2006213677A (ja) * 2005-02-07 2006-08-17 Iwate Univ 水溶性アルコキシシラン含有トリアジンジチオール金属塩及びその製造方法、並びにそれを用いた固体表面への反応性付与方法及び表面反応性固体
JP2006216654A (ja) 2005-02-02 2006-08-17 Konica Minolta Holdings Inc 有機半導体膜の形成方法および有機薄膜トランジスタの製造方法

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JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
JPWO2005122278A1 (ja) * 2004-06-10 2008-04-10 コニカミノルタホールディングス株式会社 有機半導体薄膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子
JP4565181B2 (ja) * 2004-09-13 2010-10-20 国立大学法人名古屋大学 金属コーティング方法
KR101240656B1 (ko) * 2005-08-01 2013-03-08 삼성디스플레이 주식회사 평판표시장치와 평판표시장치의 제조방법
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001316872A (ja) 2000-05-10 2001-11-16 Kunio Mori 導電性金属についての表面機能化の方法
JP2003318190A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp 半導体装置の製造方法、電気光学装置の製造方法、電子機器
JP2005051151A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 導電層の製造方法、導電層を有する基板、および電子デバイス
JP2005072188A (ja) 2003-08-22 2005-03-17 Univ Of Tokyo 有機トランジスタの製造方法、及び有機トランジスタ
JP2005286158A (ja) * 2004-03-30 2005-10-13 Seiko Epson Corp パターン形成方法、電子デバイス及びその製造方法並びに電子機器
JP2006059896A (ja) * 2004-08-18 2006-03-02 Sony Corp 電界効果型トランジスタ
JP2006216654A (ja) 2005-02-02 2006-08-17 Konica Minolta Holdings Inc 有機半導体膜の形成方法および有機薄膜トランジスタの製造方法
JP2006213677A (ja) * 2005-02-07 2006-08-17 Iwate Univ 水溶性アルコキシシラン含有トリアジンジチオール金属塩及びその製造方法、並びにそれを用いた固体表面への反応性付与方法及び表面反応性固体

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2113944A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010140439A1 (ja) * 2009-06-04 2010-12-09 コニカミノルタホールディングス株式会社 電子ペーパー用回路基板の製造方法及び有機薄膜トランジスタ素子の製造方法
WO2020100710A1 (ja) * 2018-11-16 2020-05-22 株式会社ニコン パターン形成方法、トランジスタの製造方法及びパターン形成用フィルム

Also Published As

Publication number Publication date
US20100025666A1 (en) 2010-02-04
EP2113944A1 (en) 2009-11-04
US8030648B2 (en) 2011-10-04
JPWO2008102619A1 (ja) 2010-05-27
EP2113944A4 (en) 2012-08-22

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