WO2008102619A1 - 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 - Google Patents
有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 Download PDFInfo
- Publication number
- WO2008102619A1 WO2008102619A1 PCT/JP2008/051371 JP2008051371W WO2008102619A1 WO 2008102619 A1 WO2008102619 A1 WO 2008102619A1 JP 2008051371 W JP2008051371 W JP 2008051371W WO 2008102619 A1 WO2008102619 A1 WO 2008102619A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- film transistor
- organic thin
- manufacturing
- electrode
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 125000003545 alkoxy group Chemical group 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 125000001424 substituent group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 125000003396 thiol group Chemical group [H]S* 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08710630A EP2113944A4 (en) | 2007-02-23 | 2008-01-30 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR |
US12/449,568 US8030648B2 (en) | 2007-02-23 | 2008-01-30 | Organic thin film transistor and organic thin film transistor manufacturing process |
JP2009500124A JPWO2008102619A1 (ja) | 2007-02-23 | 2008-01-30 | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007043539 | 2007-02-23 | ||
JP2007-043539 | 2007-02-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008102619A1 true WO2008102619A1 (ja) | 2008-08-28 |
Family
ID=39709898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051371 WO2008102619A1 (ja) | 2007-02-23 | 2008-01-30 | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8030648B2 (ja) |
EP (1) | EP2113944A4 (ja) |
JP (1) | JPWO2008102619A1 (ja) |
WO (1) | WO2008102619A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010140439A1 (ja) * | 2009-06-04 | 2010-12-09 | コニカミノルタホールディングス株式会社 | 電子ペーパー用回路基板の製造方法及び有機薄膜トランジスタ素子の製造方法 |
WO2020100710A1 (ja) * | 2018-11-16 | 2020-05-22 | 株式会社ニコン | パターン形成方法、トランジスタの製造方法及びパターン形成用フィルム |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2959867B1 (fr) * | 2010-05-05 | 2013-08-16 | Commissariat Energie Atomique | Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif |
JP2012038924A (ja) * | 2010-08-06 | 2012-02-23 | Sony Corp | 半導体装置、表示装置、および電子機器 |
US9627445B2 (en) * | 2013-12-05 | 2017-04-18 | Infineon Technologies Dresden Gmbh | Optoelectronic component and a method for manufacturing an optoelectronic component |
CN106653812B (zh) * | 2016-12-20 | 2019-10-11 | 武汉华星光电技术有限公司 | 柔性显示面板的制作方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001316872A (ja) | 2000-05-10 | 2001-11-16 | Kunio Mori | 導電性金属についての表面機能化の方法 |
JP2003318190A (ja) | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | 半導体装置の製造方法、電気光学装置の製造方法、電子機器 |
JP2005051151A (ja) * | 2003-07-31 | 2005-02-24 | Seiko Epson Corp | 導電層の製造方法、導電層を有する基板、および電子デバイス |
JP2005072188A (ja) | 2003-08-22 | 2005-03-17 | Univ Of Tokyo | 有機トランジスタの製造方法、及び有機トランジスタ |
JP2005286158A (ja) * | 2004-03-30 | 2005-10-13 | Seiko Epson Corp | パターン形成方法、電子デバイス及びその製造方法並びに電子機器 |
JP2006059896A (ja) * | 2004-08-18 | 2006-03-02 | Sony Corp | 電界効果型トランジスタ |
JP2006216654A (ja) | 2005-02-02 | 2006-08-17 | Konica Minolta Holdings Inc | 有機半導体膜の形成方法および有機薄膜トランジスタの製造方法 |
JP2006213677A (ja) * | 2005-02-07 | 2006-08-17 | Iwate Univ | 水溶性アルコキシシラン含有トリアジンジチオール金属塩及びその製造方法、並びにそれを用いた固体表面への反応性付与方法及び表面反応性固体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
JP4635410B2 (ja) * | 2002-07-02 | 2011-02-23 | ソニー株式会社 | 半導体装置及びその製造方法 |
JP4228204B2 (ja) * | 2003-07-07 | 2009-02-25 | セイコーエプソン株式会社 | 有機トランジスタの製造方法 |
JP2005086147A (ja) * | 2003-09-11 | 2005-03-31 | Sony Corp | 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法 |
US20080048181A1 (en) * | 2004-06-10 | 2008-02-28 | Tatsuo Tanaka | Organic Semiconductor Thin Film, Organic Semiconductor Device, Organic Thin Film Transistor and Organic Electronic Luminescence Element |
JP4565181B2 (ja) * | 2004-09-13 | 2010-10-20 | 国立大学法人名古屋大学 | 金属コーティング方法 |
KR101240656B1 (ko) * | 2005-08-01 | 2013-03-08 | 삼성디스플레이 주식회사 | 평판표시장치와 평판표시장치의 제조방법 |
KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
-
2008
- 2008-01-30 US US12/449,568 patent/US8030648B2/en not_active Expired - Fee Related
- 2008-01-30 EP EP08710630A patent/EP2113944A4/en not_active Withdrawn
- 2008-01-30 WO PCT/JP2008/051371 patent/WO2008102619A1/ja active Application Filing
- 2008-01-30 JP JP2009500124A patent/JPWO2008102619A1/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001316872A (ja) | 2000-05-10 | 2001-11-16 | Kunio Mori | 導電性金属についての表面機能化の方法 |
JP2003318190A (ja) | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | 半導体装置の製造方法、電気光学装置の製造方法、電子機器 |
JP2005051151A (ja) * | 2003-07-31 | 2005-02-24 | Seiko Epson Corp | 導電層の製造方法、導電層を有する基板、および電子デバイス |
JP2005072188A (ja) | 2003-08-22 | 2005-03-17 | Univ Of Tokyo | 有機トランジスタの製造方法、及び有機トランジスタ |
JP2005286158A (ja) * | 2004-03-30 | 2005-10-13 | Seiko Epson Corp | パターン形成方法、電子デバイス及びその製造方法並びに電子機器 |
JP2006059896A (ja) * | 2004-08-18 | 2006-03-02 | Sony Corp | 電界効果型トランジスタ |
JP2006216654A (ja) | 2005-02-02 | 2006-08-17 | Konica Minolta Holdings Inc | 有機半導体膜の形成方法および有機薄膜トランジスタの製造方法 |
JP2006213677A (ja) * | 2005-02-07 | 2006-08-17 | Iwate Univ | 水溶性アルコキシシラン含有トリアジンジチオール金属塩及びその製造方法、並びにそれを用いた固体表面への反応性付与方法及び表面反応性固体 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2113944A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010140439A1 (ja) * | 2009-06-04 | 2010-12-09 | コニカミノルタホールディングス株式会社 | 電子ペーパー用回路基板の製造方法及び有機薄膜トランジスタ素子の製造方法 |
WO2020100710A1 (ja) * | 2018-11-16 | 2020-05-22 | 株式会社ニコン | パターン形成方法、トランジスタの製造方法及びパターン形成用フィルム |
Also Published As
Publication number | Publication date |
---|---|
US20100025666A1 (en) | 2010-02-04 |
JPWO2008102619A1 (ja) | 2010-05-27 |
EP2113944A4 (en) | 2012-08-22 |
EP2113944A1 (en) | 2009-11-04 |
US8030648B2 (en) | 2011-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008102619A1 (ja) | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 | |
Liu et al. | High‐performance flexible transparent thin‐film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel | |
Yoon et al. | Effects of deposition temperature on the device characteristics of oxide thin-film transistors using In–Ga–Zn–O active channels prepared by atomic-layer deposition | |
Münzenrieder et al. | Flexible self-aligned double-gate IGZO TFT | |
TW200802864A (en) | Field effect transistor | |
WO2009028660A1 (ja) | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ | |
WO2009075281A1 (ja) | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 | |
WO2008111461A1 (ja) | 含フッ素多環芳香族化合物、含フッ素重合体、有機薄膜及び有機薄膜素子 | |
WO2009041254A1 (ja) | 有機薄膜トランジスタ | |
WO2009028460A1 (ja) | ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ | |
US8912536B2 (en) | Transistors, methods of manufacturing the same and electronic devices including transistors | |
TW200715562A (en) | Thin film transistor substrate and fabrication thereof | |
TW200737520A (en) | Gate dielectric structure and an organic thin film transistor based thereon | |
WO2009060731A1 (ja) | 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ | |
TW200739920A (en) | Method for manufacturing organic semiconductor device and composition for forming insulating film used therein | |
TW200735366A (en) | Double gate thin-film transistor and method for forming the same | |
EP2323167A1 (en) | Transistors, electronic devices including a transistor and methods of manufacturing the same | |
Bak et al. | Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications | |
WO2008117362A1 (ja) | 有機トランジスタ及びその製造方法 | |
WO2006052791A3 (en) | Insulation film semiconductor device and method | |
TW200711140A (en) | Thin film transistor substrate and method for fabricating the same | |
TW200516330A (en) | Light-emitting device and method for manufacturing the same | |
Kim et al. | InGaZnO thin‐film transistors with YHfZnO gate insulator by solution process | |
WO2007142894A3 (en) | Apparatus and method of forming a mosfet with atomic layer deposited gate dielectric | |
TW200727520A (en) | Thin film transistor, organic electro-luminescent display device and method of fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08710630 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009500124 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12449568 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008710630 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |