TW200739920A - Method for manufacturing organic semiconductor device and composition for forming insulating film used therein - Google Patents

Method for manufacturing organic semiconductor device and composition for forming insulating film used therein

Info

Publication number
TW200739920A
TW200739920A TW096105858A TW96105858A TW200739920A TW 200739920 A TW200739920 A TW 200739920A TW 096105858 A TW096105858 A TW 096105858A TW 96105858 A TW96105858 A TW 96105858A TW 200739920 A TW200739920 A TW 200739920A
Authority
TW
Taiwan
Prior art keywords
insulating film
organic semiconductor
carbon atoms
composition
semiconductor device
Prior art date
Application number
TW096105858A
Other languages
Chinese (zh)
Other versions
TWI412136B (en
Inventor
Toshiyuki Ogata
Daisuke Kawana
Hideo Hada
Motoki Takahashi
Yutaka Ohmori
Hirotake Kajii
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Univ Osaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Univ Osaka filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200739920A publication Critical patent/TW200739920A/en
Application granted granted Critical
Publication of TWI412136B publication Critical patent/TWI412136B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)

Abstract

Disclosed is a composition for forming an insulating film, which is capable of reducing spaces between molecules, thereby forming a dense insulating film. Also disclosed are an insulating film and an organic semiconductor device which can be driven at a low voltage while having a stable driving voltage by using such an insulating film. Specifically disclosed is a composition for forming an insulating film between a gate electrode layer and an organic semiconductor film layer in an organic semiconductor device, which composition contains a resin component (A) having a silsesquioxane backbone. The resin component (A) is composed of a resin (A1) having a structural unit (a1) represented by the general formula (a-1) below. (a-1) (In the formula, X represents an alkylene group having 1-15 carbon atoms or a divalent aromatic hydrocarbon group having 6-15 carbon atoms; R1 represents a hydrogen atom, an alkyl group having 1-15 carbon atoms or an alkoxyalkyl group having 2-15 carbon atoms; R2 represents an alkyl group having 1-4 carbon atoms; and n represents 0 or 1.)
TW096105858A 2006-02-22 2007-02-15 The method for producing an organic semiconductor element and the composition for forming an insulating film used in the method TWI412136B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006045273 2006-02-22
JP2006221829A JP5087807B2 (en) 2006-02-22 2006-08-16 Method for producing organic semiconductor element and composition for forming insulating film used therefor

Publications (2)

Publication Number Publication Date
TW200739920A true TW200739920A (en) 2007-10-16
TWI412136B TWI412136B (en) 2013-10-11

Family

ID=38437252

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105858A TWI412136B (en) 2006-02-22 2007-02-15 The method for producing an organic semiconductor element and the composition for forming an insulating film used in the method

Country Status (3)

Country Link
JP (1) JP5087807B2 (en)
TW (1) TWI412136B (en)
WO (1) WO2007097212A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007254677A (en) * 2006-03-24 2007-10-04 Tokyo Ohka Kogyo Co Ltd Composition for forming silica-based film and silica-based film
JP4962714B2 (en) * 2007-03-15 2012-06-27 Ｊｓｒ株式会社 Method for forming silicon dioxide film and trench isolation and composition therefor
US9464172B2 (en) 2007-12-10 2016-10-11 Kaneka Corporation Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
CN102089870B (en) 2008-03-18 2013-08-28 东丽株式会社 Gate insulating material, gate insulating film, and organic field effect transistor
US8809414B2 (en) 2008-10-02 2014-08-19 Kaneka Corporation Photocurable composition and cured product
JP2011040634A (en) * 2009-08-13 2011-02-24 Ulvac Japan Ltd Precursor composition of porous film, porous film, method of manufacturing the same, and semiconductor device
JP5756334B2 (en) 2010-10-29 2015-07-29 東京応化工業株式会社 Laminated body and method for separating the laminated body
JP2012109538A (en) 2010-10-29 2012-06-07 Tokyo Ohka Kogyo Co Ltd Laminate and method for separating the same
JP5802106B2 (en) 2010-11-15 2015-10-28 東京応化工業株式会社 Laminate and separation method
US8623447B2 (en) 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors
KR101746270B1 (en) 2011-10-31 2017-06-12 도오꾜오까고오교 가부시끼가이샤 Adhesive composition for bonding wafer and supporting body for said wafer, and use thereof
JP6826361B2 (en) * 2015-05-13 2021-02-03 東京応化工業株式会社 Photosensitive composition for forming an insulating film and a method for forming an insulating film pattern
WO2024034385A1 (en) * 2022-08-08 2024-02-15 ダウ・東レ株式会社 Method for producing phenolic hydroxyl group-containing branched organopolysiloxane

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239312B2 (en) * 1994-03-31 2001-12-17 川崎製鉄株式会社 Electrical steel sheet with electrical insulation coating with excellent corrosion resistance
JP4095763B2 (en) * 2000-09-06 2008-06-04 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
JP2003031566A (en) * 2001-07-16 2003-01-31 Fujitsu Ltd Composition for forming low-permittivity insulation film, insulation film forming method using the same, and electronic component having the insulation film obtained by the method
JP4336310B2 (en) * 2002-07-11 2009-09-30 インターナショナル・ビジネス・マシーンズ・コーポレーション Silicon-containing antireflection layer as hard mask layer and method for forming the same
AU2003302990A1 (en) * 2002-12-02 2004-07-09 Tokyo Ohka Kogyo Co., Ltd. Chemical amplification type silicone base positive photoresist composition
KR100639862B1 (en) * 2002-12-02 2006-10-31 토쿄오오카코교 가부시기가이샤 Composition for forming antireflection coating
JP4343572B2 (en) * 2003-04-01 2009-10-14 キヤノン株式会社 Method for manufacturing organic semiconductor element
JP4194508B2 (en) * 2004-02-26 2008-12-10 三洋電機株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
WO2007097212A1 (en) 2007-08-30
JP2007258663A (en) 2007-10-04
TWI412136B (en) 2013-10-11
JP5087807B2 (en) 2012-12-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees