WO2009054487A1 - Polyimide precursor and photosensitive resin composition containing polyimide precursor - Google Patents

Polyimide precursor and photosensitive resin composition containing polyimide precursor Download PDF

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Publication number
WO2009054487A1
WO2009054487A1 PCT/JP2008/069315 JP2008069315W WO2009054487A1 WO 2009054487 A1 WO2009054487 A1 WO 2009054487A1 JP 2008069315 W JP2008069315 W JP 2008069315W WO 2009054487 A1 WO2009054487 A1 WO 2009054487A1
Authority
WO
WIPO (PCT)
Prior art keywords
polyimide precursor
resin composition
carbon atoms
composition containing
photosensitive resin
Prior art date
Application number
PCT/JP2008/069315
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Hayakawa
Takeki Shimizu
Kanako Ogasawara
Hideaki Takahashi
Original Assignee
Asahi Kasei Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Kabushiki Kaisha filed Critical Asahi Kasei Kabushiki Kaisha
Priority to CN200880000934.8A priority Critical patent/CN101568572B/en
Priority to KR1020097007187A priority patent/KR101110938B1/en
Priority to JP2009501647A priority patent/JP5129230B2/en
Publication of WO2009054487A1 publication Critical patent/WO2009054487A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075—Partially aromatic polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075—Partially aromatic polyimides
    • C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Laminated Bodies (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

Disclosed is a polyimide precursor characterized by having a polyimide structure represented by the general formula (1) below and a polyamide acid structure represented by the general formula (2) below. [chemical formula 1] [chemical formula 2] (In the formulae, R1 and R6 each represents a tetravalent organic group having 1-50 carbon atoms; R2 represents a divalent organic group having 1-30 carbon atoms; R5 represents a divalent organic group having 1-80 carbon atoms; R3 represents a monovalent organic group having 1-30 carbon atoms; and n represents an integer not less than 1 but not more than 30.)
PCT/JP2008/069315 2007-10-26 2008-10-24 Polyimide precursor and photosensitive resin composition containing polyimide precursor WO2009054487A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880000934.8A CN101568572B (en) 2007-10-26 2008-10-24 Polyimide precursor and photosensitive resin composition containing polyimide precursor
KR1020097007187A KR101110938B1 (en) 2007-10-26 2008-10-24 Photosensitive resin composition which comprise polyimide precursor composition and polyimide composition
JP2009501647A JP5129230B2 (en) 2007-10-26 2008-10-24 Photosensitive resin composition

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-279503 2007-10-26
JP2007279503 2007-10-26
JP2008-072020 2008-03-19
JP2008072020 2008-03-19
JP2008-113176 2008-04-23
JP2008113176 2008-04-23
JP2008223599 2008-09-01
JP2008-223599 2008-09-01

Publications (1)

Publication Number Publication Date
WO2009054487A1 true WO2009054487A1 (en) 2009-04-30

Family

ID=40579589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069315 WO2009054487A1 (en) 2007-10-26 2008-10-24 Polyimide precursor and photosensitive resin composition containing polyimide precursor

Country Status (4)

Country Link
JP (1) JP5129230B2 (en)
KR (1) KR101110938B1 (en)
CN (1) CN101568572B (en)
WO (1) WO2009054487A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009053646A (en) * 2007-07-31 2009-03-12 Asahi Kasei Corp Photosensitive resin composition and photosensitive film using the same
JP2010018802A (en) * 2008-07-09 2010-01-28 Lg Chem Ltd Polyimide-polyamic acid copolymer, process for producing same, photosensitive composition containing same, and protective film provided using same
WO2011122198A1 (en) * 2010-03-31 2011-10-06 Jsr株式会社 Polyimide precursor, resin composition containing said precursor, and method for forming a film using resin composition
JP2011195736A (en) * 2010-03-19 2011-10-06 Asahi Kasei E-Materials Corp Polyimide precursor and photosensitive resin composition
JP2011228493A (en) * 2010-04-20 2011-11-10 Asahi Kasei E-Materials Corp Method for manufacturing flexible wiring board
JP2011242531A (en) * 2010-05-17 2011-12-01 Asahi Kasei E-Materials Corp Photosensitive resin composition and photosensitive film using the same
CN102449070A (en) * 2009-06-09 2012-05-09 旭化成电子材料株式会社 Resin composition, cured product, and circuit board using same
WO2012098734A1 (en) * 2011-01-18 2012-07-26 旭化成イーマテリアルズ株式会社 Resin composition, cured object, resin film, and wiring board
WO2012118020A1 (en) * 2011-02-28 2012-09-07 Jsr株式会社 Resin composition and film formation method using same
CN104016870A (en) * 2014-06-25 2014-09-03 中山大学 Diamine compound with meta-terphenyl structure as well as synthetic method and application thereof

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101304590B1 (en) * 2010-03-11 2013-09-05 주식회사 엘지화학 Photosensitive resin composition for insulator of OLED devices
KR101620675B1 (en) * 2011-03-25 2016-05-12 가부시키가이샤 아이.에스.티 Polyimide precursor solution, polyimide precursor, polyimide resin, mixture slurry, electrode, mixture slurry production method, and electrode formation method
US20140114000A1 (en) * 2011-06-21 2014-04-24 Mitsubishi Gas Chemical Company, Inc. Flameproofed alicyclic polyimide resin composition and thin-walled molded body of same
CN106104381B (en) * 2014-03-17 2019-12-13 旭化成株式会社 Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device
CN104017214B (en) * 2014-06-25 2016-09-14 中山大学 Light-coloured transparent polyimides based on meta-terphenyl structure diamidogen and its preparation method and application
KR102511999B1 (en) * 2014-12-31 2023-03-21 하나 마이크론(주) electron device and method of manufacturing the same
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
KR102090451B1 (en) * 2015-08-21 2020-03-18 아사히 가세이 가부시키가이샤 Photosensitive resin composition, polyimide production method, and semiconductor device
CN109348718B (en) * 2016-06-24 2021-03-12 东丽株式会社 Polyimide resin, polyimide resin composition, and use thereof
CN109517172B (en) * 2017-09-18 2023-08-29 嘉兴山蒲照明电器有限公司 Organosilicon modified polyimide resin composition and application thereof
KR20210132030A (en) * 2019-02-26 2021-11-03 도레이 카부시키가이샤 Polyamic acid resin composition, polyimide resin film and manufacturing method thereof, laminate, and electronic device and manufacturing method thereof
CN111333839B (en) * 2020-03-17 2022-07-26 浙江大学宁波理工学院 Polyimide resin containing furan ring and preparation method thereof

Citations (8)

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JPS61207438A (en) * 1985-03-11 1986-09-13 Chisso Corp Soluble polyimidedisiloxane precursor and its production
JPH0441527A (en) * 1990-06-08 1992-02-12 Sumitomo Bakelite Co Ltd Soluble polymidesiloxane
JPH09185064A (en) * 1995-12-28 1997-07-15 Japan Synthetic Rubber Co Ltd Imide group-containing polyamic acid and its production as well as liquid crystal orienting agent
JPH11153868A (en) * 1997-11-19 1999-06-08 Hitachi Chem Co Ltd Positive photosensitive polyimide precursor resin composition and production of relief pattern using the same
JP2002162740A (en) * 2000-11-22 2002-06-07 Kanegafuchi Chem Ind Co Ltd Composition for photosensitive cover lay film and photosensitive cover lay film
JP2002277880A (en) * 2001-03-14 2002-09-25 Jsr Corp Liquid crystal aligning agent for coating resin substrate, and liquid crystal display element
JP2006160958A (en) * 2004-12-09 2006-06-22 Kaneka Corp Polyimide precursor and photosensitive resin composition using the same
JP2008189694A (en) * 2007-01-31 2008-08-21 Ube Ind Ltd Copolymer having repeating unit of amic acid structure partly converted to imide structure and method for producing the same

Family Cites Families (1)

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EP1431822A4 (en) * 2001-09-26 2005-01-05 Nissan Chemical Ind Ltd Positive photosensitive polyimide resin composition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207438A (en) * 1985-03-11 1986-09-13 Chisso Corp Soluble polyimidedisiloxane precursor and its production
JPH0441527A (en) * 1990-06-08 1992-02-12 Sumitomo Bakelite Co Ltd Soluble polymidesiloxane
JPH09185064A (en) * 1995-12-28 1997-07-15 Japan Synthetic Rubber Co Ltd Imide group-containing polyamic acid and its production as well as liquid crystal orienting agent
JPH11153868A (en) * 1997-11-19 1999-06-08 Hitachi Chem Co Ltd Positive photosensitive polyimide precursor resin composition and production of relief pattern using the same
JP2002162740A (en) * 2000-11-22 2002-06-07 Kanegafuchi Chem Ind Co Ltd Composition for photosensitive cover lay film and photosensitive cover lay film
JP2002277880A (en) * 2001-03-14 2002-09-25 Jsr Corp Liquid crystal aligning agent for coating resin substrate, and liquid crystal display element
JP2006160958A (en) * 2004-12-09 2006-06-22 Kaneka Corp Polyimide precursor and photosensitive resin composition using the same
JP2008189694A (en) * 2007-01-31 2008-08-21 Ube Ind Ltd Copolymer having repeating unit of amic acid structure partly converted to imide structure and method for producing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009053646A (en) * 2007-07-31 2009-03-12 Asahi Kasei Corp Photosensitive resin composition and photosensitive film using the same
JP2010018802A (en) * 2008-07-09 2010-01-28 Lg Chem Ltd Polyimide-polyamic acid copolymer, process for producing same, photosensitive composition containing same, and protective film provided using same
CN102449070A (en) * 2009-06-09 2012-05-09 旭化成电子材料株式会社 Resin composition, cured product, and circuit board using same
JP2011195736A (en) * 2010-03-19 2011-10-06 Asahi Kasei E-Materials Corp Polyimide precursor and photosensitive resin composition
WO2011122198A1 (en) * 2010-03-31 2011-10-06 Jsr株式会社 Polyimide precursor, resin composition containing said precursor, and method for forming a film using resin composition
JP2011228493A (en) * 2010-04-20 2011-11-10 Asahi Kasei E-Materials Corp Method for manufacturing flexible wiring board
JP2011242531A (en) * 2010-05-17 2011-12-01 Asahi Kasei E-Materials Corp Photosensitive resin composition and photosensitive film using the same
WO2012098734A1 (en) * 2011-01-18 2012-07-26 旭化成イーマテリアルズ株式会社 Resin composition, cured object, resin film, and wiring board
JP5820825B2 (en) * 2011-01-18 2015-11-24 旭化成イーマテリアルズ株式会社 Resin composition, cured product, resin film and wiring board
WO2012118020A1 (en) * 2011-02-28 2012-09-07 Jsr株式会社 Resin composition and film formation method using same
CN104016870A (en) * 2014-06-25 2014-09-03 中山大学 Diamine compound with meta-terphenyl structure as well as synthetic method and application thereof

Also Published As

Publication number Publication date
CN101568572A (en) 2009-10-28
KR20090073141A (en) 2009-07-02
JP5129230B2 (en) 2013-01-30
CN101568572B (en) 2012-03-21
JPWO2009054487A1 (en) 2011-03-10
KR101110938B1 (en) 2012-03-14

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