TW200731013A - Salt suitable for an acid generator and a chemically amplified resist composition containing the same - Google Patents

Salt suitable for an acid generator and a chemically amplified resist composition containing the same

Info

Publication number
TW200731013A
TW200731013A TW095142524A TW95142524A TW200731013A TW 200731013 A TW200731013 A TW 200731013A TW 095142524 A TW095142524 A TW 095142524A TW 95142524 A TW95142524 A TW 95142524A TW 200731013 A TW200731013 A TW 200731013A
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
resist composition
chemically amplified
amplified resist
Prior art date
Application number
TW095142524A
Other languages
Chinese (zh)
Other versions
TWI395062B (en
Inventor
Satoshi Yamaguchi
Yukako Harada
Isao Yoshida
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of TW200731013A publication Critical patent/TW200731013A/en
Application granted granted Critical
Publication of TWI395062B publication Critical patent/TWI395062B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/17—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C309/74—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of six-membered aromatic rings being part of condensed ring systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/24—Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

The present invention provides a salt of the formula (I): wherein ring X represents monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms, and one or more hydrogen atom in the monocyclic or polycyclic hydrocarbon group is optionally substituted with alkyl group having 1 to 10 carbon atom, alkoxy group having 1 to 10 carbon atom, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 10 carbon atoms or cyano group; Q1 and Q2 each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; and A+ represents organic counter ion. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (I).
TW095142524A 2005-11-21 2006-11-17 Salt suitable for an acid generator and a chemically amplified resist composition containing the same TWI395062B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005335361 2005-11-21

Publications (2)

Publication Number Publication Date
TW200731013A true TW200731013A (en) 2007-08-16
TWI395062B TWI395062B (en) 2013-05-01

Family

ID=38087948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142524A TWI395062B (en) 2005-11-21 2006-11-17 Salt suitable for an acid generator and a chemically amplified resist composition containing the same

Country Status (4)

Country Link
US (1) US7786322B2 (en)
KR (1) KR101334631B1 (en)
CN (1) CN1971421B (en)
TW (1) TWI395062B (en)

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TWI384325B (en) * 2007-09-12 2013-02-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of formimg resist pattern, novel compound and method of producing the same, and acid generator
TWI400562B (en) * 2007-09-05 2013-07-01 Shinetsu Chemical Co Novel photoacid generator, resist composition, and patterning process
TWI486342B (en) * 2010-07-15 2015-06-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of forming resist pattern, novel compound, and acid generator

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TWI378325B (en) * 2005-03-30 2012-12-01 Sumitomo Chemical Co Salt suitable for an acid generator and a chemically amplified resist composition containing the same
TWI394004B (en) * 2005-03-30 2013-04-21 Sumitomo Chemical Co Asaltsuitable for an acid generator and a chemically amplified resist composition containing the same
KR20070045980A (en) * 2005-10-28 2007-05-02 스미또모 가가꾸 가부시키가이샤 A salt suitable for an acid generator and a chemically amplified resist composition containing the same
TWI395062B (en) 2005-11-21 2013-05-01 Sumitomo Chemical Co Salt suitable for an acid generator and a chemically amplified resist composition containing the same
CN1991585B (en) * 2005-12-27 2011-06-01 住友化学株式会社 Salt suitable for an acid generator and a chemically amplified corrosion resistant composition containing the same
TWI421635B (en) * 2006-06-09 2014-01-01 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI399617B (en) * 2006-08-02 2013-06-21 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI412888B (en) * 2006-08-18 2013-10-21 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI402249B (en) * 2006-08-22 2013-07-21 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
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JP4355725B2 (en) * 2006-12-25 2009-11-04 信越化学工業株式会社 Positive resist material and pattern forming method
CN101211113B (en) * 2006-12-27 2012-01-11 住友化学株式会社 Chemically amplified corrosion-resisting agent composition
CN101236357B (en) * 2007-01-30 2012-07-04 住友化学株式会社 Chemically amplified corrosion-resisitng agent composition
JP4844436B2 (en) * 2007-03-07 2011-12-28 住友化学株式会社 Chemically amplified resist composition
JP5012122B2 (en) * 2007-03-22 2012-08-29 住友化学株式会社 Chemically amplified resist composition
US7745097B2 (en) * 2007-07-18 2010-06-29 Tokyo Ohka Kogyo Co., Ltd. Compound, manufacturing method thereof, acid generator, resist composition and method of forming resist pattern
TW200918495A (en) * 2007-10-15 2009-05-01 Jsr Corp Sulfone compound, sulfonate and radiation-sensitive resin composition
JP5210612B2 (en) * 2007-12-05 2013-06-12 東京応化工業株式会社 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
US9034556B2 (en) * 2007-12-21 2015-05-19 Tokyo Ohka Kogyo Co., Ltd. Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern
TWI407256B (en) * 2007-12-21 2013-09-01 Tokyo Ohka Kogyo Co Ltd Novel compound and method of producing the same, acid generator, resist composition and method of forming resist
US20100279226A1 (en) * 2007-12-28 2010-11-04 Mitsuhiro Hata Resist processing method
JP5245956B2 (en) * 2008-03-25 2013-07-24 信越化学工業株式会社 Novel photoacid generator, resist material and pattern forming method using the same
JP4569786B2 (en) 2008-05-01 2010-10-27 信越化学工業株式会社 Novel photoacid generator, resist material and pattern forming method using the same
TWI462938B (en) * 2008-05-21 2014-12-01 Sumitomo Chemical Co Polymer and chemically amplified resist composition comprising the same
JP5997873B2 (en) * 2008-06-30 2016-09-28 富士フイルム株式会社 Photosensitive composition and pattern forming method using the same
JP5244711B2 (en) 2008-06-30 2013-07-24 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5277128B2 (en) * 2008-09-26 2013-08-28 富士フイルム株式会社 Positive resist composition for immersion exposure and pattern forming method
JP5103420B2 (en) * 2009-02-24 2012-12-19 富士フイルム株式会社 PATTERN FORMING METHOD USING NEGATIVE DEVELOPING RESIST COMPOSITION
JP5287552B2 (en) * 2009-07-02 2013-09-11 信越化学工業株式会社 Photoacid generator, resist material and pattern forming method
KR101736748B1 (en) * 2009-09-16 2017-05-29 스미또모 가가꾸 가부시키가이샤 Photoresist composition
JP5608492B2 (en) * 2009-09-18 2014-10-15 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5565231B2 (en) * 2009-09-25 2014-08-06 住友化学株式会社 Resist composition
KR101115581B1 (en) * 2009-10-01 2012-03-06 금호석유화학 주식회사 Method for preparing sulfonium salt and sulfonium salt prepared by the same
JP2011123480A (en) * 2009-11-10 2011-06-23 Sumitomo Chemical Co Ltd Resist composition
US8765351B2 (en) * 2009-11-18 2014-07-01 Sumitomo Chemical Company, Limted Salt and photoresist composition containing the same
TWI476172B (en) * 2009-11-18 2015-03-11 Sumitomo Chemical Co Salt and photoresist composition containing the same
TWI491980B (en) * 2009-11-18 2015-07-11 Sumitomo Chemical Co Salt and photoresist composition containing the same
JP5521999B2 (en) * 2009-11-26 2014-06-18 住友化学株式会社 Chemically amplified photoresist composition and method for producing resist pattern
EP2332960B1 (en) * 2009-12-10 2016-08-10 Rohm and Haas Electronic Materials LLC Cholate photoacid generators and photoresists comprising same
JP5723626B2 (en) * 2010-02-19 2015-05-27 富士フイルム株式会社 Pattern forming method, chemically amplified resist composition, and resist film
EP2539316B1 (en) 2010-02-24 2019-10-23 Basf Se Latent acids and their use
JP5953670B2 (en) 2010-08-27 2016-07-20 住友化学株式会社 Salt, resist composition and method for producing resist pattern
US20120076996A1 (en) * 2010-09-28 2012-03-29 Fujifilm Corporation Resist composition, resist film therefrom and method of forming pattern therewith
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TWI395062B (en) 2005-11-21 2013-05-01 Sumitomo Chemical Co Salt suitable for an acid generator and a chemically amplified resist composition containing the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400562B (en) * 2007-09-05 2013-07-01 Shinetsu Chemical Co Novel photoacid generator, resist composition, and patterning process
TWI384325B (en) * 2007-09-12 2013-02-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of formimg resist pattern, novel compound and method of producing the same, and acid generator
TWI486342B (en) * 2010-07-15 2015-06-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of forming resist pattern, novel compound, and acid generator

Also Published As

Publication number Publication date
KR101334631B1 (en) 2013-11-29
US7786322B2 (en) 2010-08-31
CN1971421A (en) 2007-05-30
CN1971421B (en) 2012-05-30
US20070122750A1 (en) 2007-05-31
KR20070053619A (en) 2007-05-25
TWI395062B (en) 2013-05-01

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