WO2008096648A1 - 高融点金属合金、高融点金属珪化物、高融点金属炭化物、高融点金属窒化物あるいは高融点金属ホウ化物の難焼結体からなるターゲット及びその製造方法並びに同スパッタリングターゲット-バッキングプレート組立体及びその製造方法 - Google Patents
高融点金属合金、高融点金属珪化物、高融点金属炭化物、高融点金属窒化物あるいは高融点金属ホウ化物の難焼結体からなるターゲット及びその製造方法並びに同スパッタリングターゲット-バッキングプレート組立体及びその製造方法 Download PDFInfo
- Publication number
- WO2008096648A1 WO2008096648A1 PCT/JP2008/051364 JP2008051364W WO2008096648A1 WO 2008096648 A1 WO2008096648 A1 WO 2008096648A1 JP 2008051364 W JP2008051364 W JP 2008051364W WO 2008096648 A1 WO2008096648 A1 WO 2008096648A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- melting point
- point metal
- target
- sintering
- resistant material
- Prior art date
Links
- 238000002844 melting Methods 0.000 title abstract 21
- 239000002184 metal Substances 0.000 title abstract 17
- 239000000463 material Substances 0.000 title abstract 5
- 229910001092 metal group alloy Inorganic materials 0.000 title abstract 4
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- 229910021332 silicide Inorganic materials 0.000 title abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 4
- 238000005245 sintering Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000013077 target material Substances 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 1
- 238000007731 hot pressing Methods 0.000 abstract 1
Classifications
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
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- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Composite Materials (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/302,319 US9677170B2 (en) | 2007-02-09 | 2008-01-30 | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
KR1020087030241A KR101086661B1 (ko) | 2007-02-09 | 2008-01-30 | 고융점 금속 합금, 고융점 금속 규화물, 고융점 금속 탄화물, 고융점 금속 질화물 혹은 고융점 금속 붕소화물의 난소결체로 이루어지는 타겟 및 그 제조 방법 그리고 동스퍼터링 타겟-백킹 플레이트 조립체 및 그 제조 방법 |
JP2008557077A JP4927102B2 (ja) | 2007-02-09 | 2008-01-30 | 高融点金属合金、高融点金属珪化物、高融点金属炭化物、高融点金属窒化物あるいは高融点金属ホウ化物の難焼結体からなるターゲット及びその製造方法並びに同スパッタリングターゲット−バッキングプレート組立体及びその製造方法 |
CN2008800004185A CN101542011B (zh) | 2007-02-09 | 2008-01-30 | 由高熔点难烧结物质构成的靶、靶-背衬板组件的制造方法 |
EP08704146.3A EP2119808B1 (en) | 2007-02-09 | 2008-01-30 | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
US15/271,372 US10344373B2 (en) | 2007-02-09 | 2016-09-21 | Process for producing a target formed of a sintering-resistant material of a high-melting point metal alloy, silicide, carbide, nitride or boride |
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JP2007-030792 | 2007-02-09 | ||
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US12/302,319 A-371-Of-International US9677170B2 (en) | 2007-02-09 | 2008-01-30 | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
US15/271,372 Division US10344373B2 (en) | 2007-02-09 | 2016-09-21 | Process for producing a target formed of a sintering-resistant material of a high-melting point metal alloy, silicide, carbide, nitride or boride |
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US (2) | US9677170B2 (ja) |
EP (2) | EP2806048B1 (ja) |
JP (2) | JP4927102B2 (ja) |
KR (1) | KR101086661B1 (ja) |
CN (2) | CN102367567B (ja) |
TW (1) | TW200844243A (ja) |
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Cited By (2)
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TWI671276B (zh) * | 2014-03-26 | 2019-09-11 | 日商Jx日鑛日石金屬股份有限公司 | 由碳化鎢或碳化鈦構成之濺鍍靶、及其等之製造方法 |
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- 2008-01-30 EP EP14178019.7A patent/EP2806048B1/en active Active
- 2008-01-30 EP EP08704146.3A patent/EP2119808B1/en active Active
- 2008-01-30 CN CN201110262878.9A patent/CN102367567B/zh active Active
- 2008-01-30 WO PCT/JP2008/051364 patent/WO2008096648A1/ja active Application Filing
- 2008-01-30 CN CN2008800004185A patent/CN101542011B/zh active Active
- 2008-01-30 JP JP2008557077A patent/JP4927102B2/ja active Active
- 2008-02-05 TW TW097104524A patent/TW200844243A/zh unknown
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US9546418B2 (en) | 2011-02-14 | 2017-01-17 | Tosoh Smd, Inc. | Diffusion-bonded sputter target assembly and method of manufacturing |
TWI671276B (zh) * | 2014-03-26 | 2019-09-11 | 日商Jx日鑛日石金屬股份有限公司 | 由碳化鎢或碳化鈦構成之濺鍍靶、及其等之製造方法 |
Also Published As
Publication number | Publication date |
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CN101542011A (zh) | 2009-09-23 |
CN102367567B (zh) | 2015-04-01 |
CN101542011B (zh) | 2011-11-23 |
JPWO2008096648A1 (ja) | 2010-05-20 |
CN102367567A (zh) | 2012-03-07 |
EP2119808B1 (en) | 2014-09-17 |
JP4927102B2 (ja) | 2012-05-09 |
KR101086661B1 (ko) | 2011-11-24 |
EP2119808A1 (en) | 2009-11-18 |
TW200844243A (en) | 2008-11-16 |
US20170009335A1 (en) | 2017-01-12 |
US20090229975A1 (en) | 2009-09-17 |
EP2806048A3 (en) | 2014-12-24 |
EP2119808A4 (en) | 2012-07-11 |
KR20090032037A (ko) | 2009-03-31 |
TWI373534B (ja) | 2012-10-01 |
US10344373B2 (en) | 2019-07-09 |
EP2806048A2 (en) | 2014-11-26 |
JP5346096B2 (ja) | 2013-11-20 |
EP2806048B1 (en) | 2017-10-11 |
US9677170B2 (en) | 2017-06-13 |
JP2012136779A (ja) | 2012-07-19 |
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