WO2008041402A1 - outil de découpe d'un revêtement de surface - Google Patents
outil de découpe d'un revêtement de surface Download PDFInfo
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- WO2008041402A1 WO2008041402A1 PCT/JP2007/064135 JP2007064135W WO2008041402A1 WO 2008041402 A1 WO2008041402 A1 WO 2008041402A1 JP 2007064135 W JP2007064135 W JP 2007064135W WO 2008041402 A1 WO2008041402 A1 WO 2008041402A1
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- WIPO (PCT)
- Prior art keywords
- group
- oxygen
- hard layer
- cutting tool
- coated cutting
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T407/00—Cutters, for shaping
- Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a surface-coated cutting tool having a coating on a substrate.
- a surface-coated cutting tool in which a hard coating layer such as titanium nitride and a composite oxide layer of Al, Si, and Ti are laminated has been proposed as a coating formed on a substrate (special feature). No. 09-248702 (Patent Document 1)).
- This surface-coated cutting tool is said to have excellent chipping resistance even under severe conditions.
- the composite oxide layer is formed in an amorphous state, the hardness is inferior, so that further improvement in wear resistance is required.
- Patent Document 1 Japanese Patent Laid-Open No. 09-248702
- Patent Document 2 JP-A-2005-138210
- the present invention has been made in view of the current situation as described above.
- the object of the present invention is to provide excellent adhesion between each layer of a coating film formed on a substrate, and to provide wear resistance and resistance. It is an object of the present invention to provide a surface-coated cutting tool that is highly compatible with chipping properties.
- the surface-coated cutting tool of the present invention comprises a substrate and a coating formed on the substrate, and the coating comprises one or more hard layers and one or more oxygen-rich layers.
- a hard layer, the hard layer is made entirely of crystalline or crystalline part of which is amorphous, the oxygen-rich hard layer is laminated with the hard layer, and It is characterized in that it becomes amorphous at the interface region with the hard layer.
- the oxygen-rich hard layer is crystalline in a region other than the interface region.
- the interface region has a thickness of 1 nm to 500 nm from the interface with the hard layer. Les, preferably to have formed.
- the hard layer is composed of a group IVa element (Ti, Zr, Hf, etc.), a group Va element (V, Nb, Ta, etc.), a Via group element (Cr, Mo, W, etc.), A compound containing at least one element selected from the group consisting of Al, Mg, and Si and a nitrogen element, or IVa group element, Va group element, Via group element, Al, Mg, and Si in the periodic table It is preferably constituted by a compound containing at least one element selected from the group consisting of: nitrogen element; and at least one element selected from the group consisting of carbon, oxygen, and boron.
- the above compound containing at least one element selected from the group consisting of is selected from the group consisting of IVa group element, Va group element, Via group element, Al, Mg, and Si in the periodic table included in the compound Preferably, it has the same crystal structure as the crystal structure of the compound containing only at least one element and nitrogen element.
- the oxygen-rich hard layer includes at least one element selected from the group consisting of Group IVa elements, Group Va elements, Group Via elements, Al, Y, Mg, B, and Si in the periodic table.
- the compound constituting the oxygen-rich hard layer preferably contains A1, and together with A1, at least one selected from the group consisting of Zr, Hf, B, Ti, Cr, Y, and Si It is preferable to contain certain elements.
- the coating film has a thickness of 0.1 ⁇ m or more and 25 ⁇ m or less.
- the base material is cemented carbide, cermet, high speed steel, ceramics, cubic boron nitride. It is preferably constituted by either a sintered body or a diamond sintered body.
- the surface-coated cutting tool of the present invention has the above-described configuration, so that the adhesion of each layer of the coating film formed on the substrate is excellent, and the wear resistance and fracture resistance are high. This is a balance between
- FIG. 1 is a schematic diagram showing a schematic configuration of a film forming apparatus.
- the surface-coated cutting tool of the present invention comprises a base material and a coating film formed on the base material.
- the surface-coated cutting tool of the present invention having such a configuration is used for pin milling of a drill tip, an end minole, a milling or turning edge cutting type cutting tip, a metal saw, a cutting tool, a reamer, a tap, or a crankshaft. It can be used very effectively as a chip.
- a conventionally known material known as such a cutting tool substrate can be used without particular limitation.
- cemented carbide for example, WC-based cemented carbide, WC, Co, or carbon nitrides such as Ti, Ta, Nb, etc.
- cermet TiC, TiN , TiCN, etc.
- high-speed steel ceramics (titanium carbide, silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, and mixtures thereof), cubic boron nitride sintered body, diamond Sintered bodies etc. can be mentioned as an example of such a substrate.
- cemented carbide for example, WC-based cemented carbide, WC, Co, or carbon nitrides such as Ti, Ta, Nb, etc.
- cermet TiC, TiN , TiCN, etc.
- ceramics titanium carbide, silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, and mixtures thereof
- these substrates may have a modified surface.
- a / layer is formed on the surface, and in the case of cermet, a hardened layer may be formed. The effect of the invention is shown.
- the coating formed on the substrate of the surface-coated cutting tool of the present invention is formed by laminating one or more layers. More specifically, the coating includes one or more hard layers and one or more oxygen-rich hard layers. As long as each of these layers is included, other layers may be included.
- the film of the present invention is not limited to the one that covers the entire surface of the substrate, and includes a mode in which the film is not partially formed. [0022]
- the coating of the present invention is a force in which each layer acts synergistically to achieve both high wear resistance and fracture resistance. Particularly, the hard layer has wear resistance and fracture resistance.
- the oxygen-rich hard layer supports both wear resistance and fracture resistance from the side by contributing to the improvement of oxidation resistance and high-temperature stability. There is significance in laminating both.
- the coating of the present invention preferably has a compressive stress, but it is not necessary to precisely control the compressive stress of each layer as in the prior art. This is because by adopting the configuration described in detail below, each layer is laminated with high adhesion without precisely controlling the compressive stress.
- the total thickness of these films is preferably 0.1 ⁇ m or more and 25 ⁇ m or less, more preferably the upper limit is 15 zm or less. More preferably, it is not more than 10 zm, and the lower limit is not less than 0, more preferably not less than 1 ⁇ m. If the thickness is less than 0.1 ⁇ m, the effect of improving various properties such as wear resistance and oxidation resistance may not be sufficiently exhibited, and if it exceeds 25 ⁇ , the fracture resistance may decrease.
- the film will be described in more detail.
- the hard layer of the present invention is one or more layers contained in the coating, and the entire layer is composed of crystalline force including a crystalline force or a part thereof including an amorphous material.
- the whole layer also has a crystalline force” means that the entire layer has a substantially crystalline force, and a different phase (impure phase other than pure crystalline) becomes a very small part depending on the manufacturing conditions. If included, it means included.
- “being part of the crystalline force including amorphous” means, for example, a nanocomposite structure in which crystal particles are dispersed in an amorphous matrix, and the layer is crystalline. And an amorphous part are included.
- the hard layer of the present invention basically indicates that at least a part of the layer is crystalline, and the entire layer does not include an amorphous layer only.
- crystalline means that the state of the compound composing the layer is a crystalline state. More specifically, the structure of the structure can be determined by observation with a ⁇ (transmission electron microscope). This means that the boundary can be confirmed and the ⁇ ⁇ diffraction pattern does not halo.
- amorphous means that the compound exists in an amorphous state, and more specifically, M (transmission electron microscope) diffraction pattern is halo ring.
- Such a hard layer includes at least one element selected from the group consisting of group IVa elements, group Va elements, group Via elements, Al, Mg, and Si in the periodic table and a nitrogen element.
- the compound constituting the hard layer is preferably crystalline, but, for example, a nanocomposite in which crystal particles (TiN) are dispersed in an amorphous matrix (SiN) such as a compound represented by TiSiN. It can include a structure, a compound containing nitrogen and oxygen, and a part thereof including a crystalline compound containing amorphous material.
- the compound containing at least one element selected from the group consisting of Group IVa element, Group Va element, Group Via element, Al, Mg, and Si of the periodic table and nitrogen element For example, TiN, A1N, CrN, TiSiN, ZrN, AlZrN, TiAlN, TiAlSiN, TiAlCrSiN, AlCrN, AlCrSiN, TiZrN, TiAlMoN, TiAlNbN, AlCrTaN, AlTiVN, TiCrHfN, Cr SiWN, AlHfN, TiAlWN, TiAlWN, TiAlWN, TiAlWN, Z it can.
- TiN, A1N, CrN, TiSiN, ZrN, AlZrN TiAlN, TiAlSiN, TiAlCrSiN, AlCrN, AlCrSiN, TiZrN, TiAlMoN, TiAlNbN, AlC
- the atomic ratios of the respective elements are not necessarily equal, and all conventionally known atomic ratios are included.
- the atomic ratio of Ti and N includes 1: 1, but also includes 2: 1, 1: 0.9.5, 1: 0.9, etc. (Unless otherwise noted, The same).
- the hardness of the hard layer may be inferior and the wear resistance may be reduced.
- the above compound containing at least one element selected from the group consisting of is selected from the group consisting of IVa group element, Va group element, Via group element, Al, Mg, and Si in the periodic table included in the compound
- a compound containing only at least one kind of element and nitrogen element (however, the former atomic ratio of element to nitrogen element is not limited to 1: 1) and has the same crystal structure Is preferred.
- a, b and d other than c are not particularly limited as long as the above conditions are satisfied.
- the thickness of such a hard layer (the total thickness when it is formed as two or more layers) is preferably 0.1 ⁇ m or more and 20 ⁇ m or less, more preferably The upper limit is 15 ⁇ m or less, more preferably 10 ⁇ m or less, and the lower limit is 0.5 am or more, more preferably 1 ⁇ m or more. If the thickness is less than 0.1 lzm, the effect of improving the wear resistance may not be sufficiently exhibited, and if it exceeds 20 xm, the fracture resistance may be reduced, which may be undesirable. [0038] ⁇ Oxygen-rich hard layer>
- the oxygen-rich hard layer of the present invention is one or more layers contained in the film, and is characterized in that it is laminated with the hard layer and is amorphous in an interface region with the hard layer. ing.
- the adhesiveness with the hard layer having a different chemical composition and crystal structure is dramatically improved, and delamination between the hard layer and the hard layer is achieved. It can prevent very effectively.
- the oxygen-rich hard layer and the hard layer act synergistically, it is possible to achieve a high degree of compatibility between wear resistance and fracture resistance.
- the present invention has a remarkable effect that the adhesion of each layer can be improved without precisely controlling the compression stress of each layer as in the prior art, and by controlling the compressive stress, This eliminates the problem of both wear resistance and fracture resistance.
- the oxygen-rich hard layer contains at least an oxygen element (more preferably, the oxygen element content is higher than that of the compound that constitutes the hard layer).
- the name is used.
- the oxygen-rich hard layer is preferably crystalline in a region other than the interface region. As a result, it is possible to prevent the hardness of the oxygen-rich hard layer from being lowered while maintaining the adhesion to the hard layer, and thus to prevent the wear resistance of the oxygen-rich hard layer itself from being lowered.
- the interface region is preferably formed to have a thickness of 1 nm to 500 nm from the interface with the hard layer. If the thickness is less than 1 nm, the amorphous state cannot be stabilized, and if it exceeds 500 nm, the hardness of the entire layer may decrease.
- the lower limit of the interface region is more preferably 50 nm or more, and further preferably lOOnm or more.
- the oxygen-rich hard layer becomes amorphous in all the interface regions.
- Such an oxygen-rich hard layer is composed of an IVa group element, a Va group element, a Via group element in the periodic table, A compound containing at least one element selected from the group consisting of Al, Y, Mg, B, and Si and an oxygen element, or a group IVa element, a group Va element, a group Via element, Al, Y, Consists of a compound containing at least one element selected from the group consisting of Mg, B, and Si, an oxygen element, and at least one element selected from the group consisting of carbon, nitrogen, and boron. It is preferable.
- Such an oxygen-rich hard layer can be composed of one or more compounds.
- a compound containing at least one element selected from the group consisting of IVa group element, Va group element, Via group element, Al, Y, Mg, B, and Si force in the periodic table and an oxygen element For example, Al ⁇ , YO, Mg ⁇ , SiO, CrO, Ti ⁇ , TiO, ⁇ 1 ⁇ , V ⁇ , ZrO, Hf
- At least one element selected from the group consisting of group IVa element, group Va element, group Via element, Al, Y, Mg, B, and Si in the periodic table oxygen element, carbon, nitrogen And the above compound containing at least one element selected from the group consisting of boron and
- the crystal structure of the compound is at least one selected from the group consisting of group IVa elements, group Va elements, group Via elements, Al, Y, Mg, B, and Si in the periodic table.
- the compound constituting the oxygen-rich hard layer as described above contains A1, and together with A1, it is selected from the group consisting of Zr, Hf, B, Ti, Cr, Y, and Si. More preferably, it contains at least one element selected.
- A1 particularly high hardness is obtained, and by further including at least one element selected from the group consisting of Zr, Hf, B, Ti, Cr, Y, and Si, the crystal structure becomes smaller. This is because high hardness can be obtained. Therefore, as the compound that constitutes the oxygen-rich hard layer, Al 2 O 3 (Oxidation resistance is also improved by using an oxide at the same time) is particularly preferred.
- Al 2 O 3 Oxidation resistance is also improved by using an oxide at the same time
- At least one element selected from the group consisting of Y, Y, and Si is further included.
- the mode in which at least one element selected from the group force consisting of Zr, Hf, B, Ti, Cr, Y, and Si is included in the compound is not particularly limited. This includes any case where it enters as a substitution type at a normal position of the crystal lattice, enters as an interstitial type between the crystal lattices, forms an intermetallic compound, or exists as an amorphous state.
- at least one element selected from the group consisting of Zr, Hf, B, Ti, Cr, Y, and Si is included in the compound in an amount of 0.01 atomic% to 10 atomic%. Is preferred. More preferably, the lower limit is 0.5 atomic% or more. If the content is less than 0.01 atomic%, the effect of improving the hardness may not be sufficiently exhibited. If it exceeds the upper limit, the crystallinity in the non-amorphous region is lowered and the hardness may be lowered.
- the Al O force! Contains at least one element selected from the group force consisting of Hf, B, Ti, Cr, Y, and Si, the crystal structure does not include that element. Preferably the structure is the same.
- the thickness of such an oxygen-rich hard layer is preferably 0.1 ⁇ m or more and 20 ⁇ m or less.
- the upper limit is 10 ⁇ m or less, and the lower limit is 0.5 ⁇ m or more. If the thickness is less than 0.1 ⁇ m, the effect of improving the wear resistance and oxidation resistance may not be sufficiently exhibited, and if it exceeds 20 zm, the fracture resistance is lowered, which is not preferable.
- the mode of lamination of the hard layer and the oxygen-rich hard layer is not particularly limited and can be arbitrarily laminated.
- the layer formed immediately above the substrate so as to be in contact with the substrate may be a hard layer or an oxygen-rich hard layer.
- different layers may be alternately stacked one by one, or two or more of the same kind of layers may be stacked.
- the layer constituting the surface as the uppermost layer of the coating may be either a hard layer or an oxygen-rich hard layer.
- other layers other than the hard layer and the oxygen-rich hard layer may be included.
- Examples of the method for producing the surface-coated cutting tool of the present invention include a method in which each layer of the coating is formed on the substrate by physical vapor deposition or chemical vapor deposition.
- each layer of the coating is particularly preferably formed by physical vapor deposition.
- any conventionally known physical vapor deposition method can be adopted.
- sputtering is preferred when coating with a non-conductive compound (eg, Al 2 O 3).
- a magnetron sputtering method using a pulse power source for the force sword.
- a combination of a sputtering method and an arc ion plating method, or a conductive material dispersed in a non-conductive compound imparts conductivity, thereby providing an arc.
- a method of forming a film by an ion plating method can also be adopted.
- the conditions for making the interface region with the hard layer amorphous in the oxygen-rich hard layer are as follows.
- the bias voltage is not applied and the substrate (base material) temperature is set to obtain the crystal quality.
- the oxygen gas flow rate is 50% or less of the flow rate for obtaining a crystalline compound
- the pulse DC power value is 35% or less of the same power value for obtaining a crystalline compound. It can be made amorphous by controlling the voltage.
- the chemical composition (compound composition) of each film below was confirmed by XPS (X-ray photoelectron spectrometer), and the identification of crystalline and amorphous was confirmed by TEM. Further, the residual stress (compressive stress) is an arbitrary point 3 points (these points of switching cutting tool surface flat portion by sin 2 phi method using X-ray stress measuring device to each other in earthenware pots by can represent the stress of the site at a distance of more than 0.
- each layer of the film is formed by a combination of an unbalanced magnetron sputtering method and a force sword arc ion plating method, which are physical vapor deposition methods. This includes cases where
- WC-based cemented carbide with grade JIS standard M20, and shape power SJIS standard CNMG120408 as a cutting tip (used for two types of wear resistance tests described later) and grade force SJIS standard P20 WC-based cemented carbides with the shape force SJIS standard SDEX42MT as cutting tips (used for the intermittent test described later) were prepared (the above JIS standards are for the 1998 version) . Then, form the coating on each substrate in the same way as follows. Made.
- FIG. 1 is a schematic diagram showing a schematic configuration of the film forming apparatus 10.
- a plurality of arc evaporation sources 21, 22, 23, 24 and an unbalanced magnetron sputtering evaporation source (hereinafter referred to as UBM sputtering source) 25 are arranged in the film forming apparatus 10 shown in FIG.
- the base material 20 was attached to a holder 14 that rotates in the center so as to face the evaporation sources 2:! To 25 respectively.
- the necessary gas is introduced into the film forming apparatus 10 from the gas inlet 15.
- a heater 16 is provided in the film forming apparatus 10.
- a predetermined metal raw material (eg, TiAl or Ti) is set in one or more of the arc evaporation sources 21, 22, 23, and 24, and for example, Al (Zr, Hf, B, Ti, Cr, Y, Si, etc. may be included). That is, as a coating on the substrate, an oxygen-rich hard layer is formed by a UBM sputtering source, and a hard layer is formed by an arc evaporation source.
- argon gas is introduced to maintain the pressure in the apparatus at 3. OPa, and while gradually increasing the substrate bias power supply voltage to 1000 V, the substrate surface is cleaned for 15 minutes. became. After that, I was disgusted with Anolegon gas.
- the chemical composition and the laminated structure are set in the evaporation source so that the chemical composition and the laminated structure are as shown in Table 1 and Table 2 below.
- Each such target was set.
- the bias voltage is not applied at the initial stage of film formation and at the end of film formation or at the end of film formation, and the flow rate of oxygen gas is set to other than the initial stage of film formation and at the end of film formation or the end of film formation.
- the discharge voltage is controlled so that the pulsed DC power value is 35% or less of the same power value other than at the beginning of film formation and / or at the end of film formation.
- the substrate (substrate) temperature is set to 400 to 600 ° C, and one or more gases of nitrogen, methane (as a carbon source), and oxygen are introduced as a vacuum or a reaction gas.
- nitrogen, methane (as a carbon source), and oxygen are introduced as a vacuum or a reaction gas.
- methane as a carbon source
- oxygen is introduced as a vacuum or a reaction gas.
- the first layer is formed as a coating directly on the substrate, and the second and subsequent layers are sequentially formed on the first layer.
- the blank area indicates that the corresponding layer is not formed.
- the compound marked with “*” is an oxygen-rich hard layer, and the others are hard layers.
- the oxygen-rich hard layer “amo” indicates amorphous, and the numerical value in parentheses (nm) indicates the amorphous thickness (that is, the thickness of the interface region with the hard layer).
- “hi” and “ ⁇ ” indicate that it is crystalline (“hi” indicates that it is a crystal structure of the diamond, and “ ⁇ ” indicates that it is a crystal structure of the ⁇ type. " ⁇ , ⁇ " indicates that the ⁇ -type crystal structure and the ⁇ -type crystal structure coexist) 0
- the third oxygen-rich hard layer of No. 1 in Table 1 indicates that the compound constituting it is A 1 O, and “amo (80) —y—amo (200)”
- the notation is the second hard layer
- Amorphous Al 2 O having a thickness of 80 nm (80 nm from the interface with the hard layer) is formed in the interface region with (TiAIN), and the thickness is in the interface region with the fourth hard layer (TiCN).
- Amorphous Al 2 O of 200 nm (thickness from the interface with the hard layer is 200 nm) is formed, and
- the crystalline Al (y-type crystal structure) Al is the thickness of 1.22 ⁇ (the thickness of the entire oxygen-rich hard layer 1. ⁇ ⁇
- composition of the compound constituting the hard layer in Tables 1 and 2 is a conventionally known composition, and its crystal structure is IVa of the periodic table contained in the compound (but crystalline). Having the same crystal structure as that of a compound containing only at least one element selected from the group consisting of Group element, Va group element, Via group element, Al, Mg, and Si and nitrogen element It was confirmed.
- the third oxygen-rich hard layer of No. 8 and No. 9 in Table 1 has no amorphous region formed in the interface region with TiN of the fourth layer.
- Four layers of TiN can be thought of as positioning other layers rather than hard layers.
- the second oxygen-rich hard layer of No. 10 and No. 11 has no amorphous region formed in the interface region with TiN of the first layer.
- TiN can be considered as a layer other than a hard layer.
- Crystalline Al 2 O is formed also in the interface region with the third layer TiSiBCNO, and amorphous Al 2 O is 220 nm thick in the region other than these interface regions (ie, the central region in the thickness direction).
- the notation “( ⁇ 2. / 0 )” indicates that Al ⁇ contains 2 atomic% of B.
- the surface-coated cutting tools of the examples of the present invention of No .:! To No. 18 all have excellent wear resistance and fracture resistance. It was. That is, in the surface-coated cutting tools of these examples, the layers constituting the coating are excellent in adhesion to each other, so that the layers act synergistically to achieve both high wear resistance and fracture resistance. it is conceivable that.
- the surface-coated cutting tools of Comparative Examples No. 19 to No. 23 are inferior in adhesion and inferior in wear resistance and fracture resistance as compared to those in the above Examples. It was. Therefore, it was confirmed that the structure of the surface-coated cutting tool of the present invention was excellent.
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Abstract
La présente invention concerne un outil de découpe d'un revêtement de surface comportant un matériau de base et, formé sur celui-ci, un revêtement, caractérisé en ce que le revêtement comprend au moins une couche dure et au moins une couche dure enrichie en oxygène, et en ce que la couche dure dans sa totalité consiste en une substance cristalline ou une substance cristalline contenant une substance non cristalline dans une partie, et en ce que la couche dure enrichie en oxygène est stratifiée sur la couche dure et est non cristalline dans sa région d'interface avec la couche dure.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008537424A JP5172687B2 (ja) | 2006-10-02 | 2007-07-18 | 表面被覆切削工具 |
US12/303,331 US8071211B2 (en) | 2006-10-02 | 2007-07-18 | Surface-coated cutting tool |
EP07790890.3A EP2077172B1 (fr) | 2006-10-02 | 2007-07-18 | Outil de découpe d'un revêtement de surface |
IL197842A IL197842A0 (en) | 2006-10-02 | 2009-03-26 | Surface coating cutting tool |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006-271066 | 2006-10-02 | ||
JP2006271066 | 2006-10-02 |
Publications (1)
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WO2008041402A1 true WO2008041402A1 (fr) | 2008-04-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/064135 WO2008041402A1 (fr) | 2006-10-02 | 2007-07-18 | outil de découpe d'un revêtement de surface |
Country Status (5)
Country | Link |
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US (1) | US8071211B2 (fr) |
EP (1) | EP2077172B1 (fr) |
JP (1) | JP5172687B2 (fr) |
IL (1) | IL197842A0 (fr) |
WO (1) | WO2008041402A1 (fr) |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011125944A (ja) * | 2009-12-16 | 2011-06-30 | Sumitomo Electric Ind Ltd | 被膜、切削工具および被膜の製造方法 |
JP2012157939A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具 |
JP2012157938A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具 |
JP2012157940A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具 |
JP2014522916A (ja) * | 2011-08-10 | 2014-09-08 | インテグリス・インコーポレーテッド | 任意のイットリア被覆層を有するAlONコーティングされた基体 |
JP2017128811A (ja) * | 2011-08-10 | 2017-07-27 | インテグリス・インコーポレーテッド | 任意のイットリア被覆層を有するAlONコーティングされた基体 |
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JP2015182207A (ja) * | 2014-03-26 | 2015-10-22 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
WO2017038435A1 (fr) * | 2015-08-28 | 2017-03-09 | 株式会社神戸製鋼所 | Revêtement dur et élément recouvert de revêtement dur |
Also Published As
Publication number | Publication date |
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EP2077172A1 (fr) | 2009-07-08 |
EP2077172A4 (fr) | 2011-07-20 |
US20090202312A1 (en) | 2009-08-13 |
IL197842A0 (en) | 2009-12-24 |
JP5172687B2 (ja) | 2013-03-27 |
US8071211B2 (en) | 2011-12-06 |
JPWO2008041402A1 (ja) | 2010-02-04 |
EP2077172B1 (fr) | 2020-05-06 |
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