WO2007132933A1 - 研磨組成物の製造方法 - Google Patents
研磨組成物の製造方法 Download PDFInfo
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- WO2007132933A1 WO2007132933A1 PCT/JP2007/060290 JP2007060290W WO2007132933A1 WO 2007132933 A1 WO2007132933 A1 WO 2007132933A1 JP 2007060290 W JP2007060290 W JP 2007060290W WO 2007132933 A1 WO2007132933 A1 WO 2007132933A1
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- 239000000203 mixture Substances 0.000 title claims abstract description 313
- 238000005498 polishing Methods 0.000 title claims abstract description 269
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000007800 oxidant agent Substances 0.000 claims abstract description 29
- 239000006061 abrasive grain Substances 0.000 claims abstract description 27
- 239000002253 acid Substances 0.000 claims abstract description 27
- 239000004094 surface-active agent Substances 0.000 claims abstract description 25
- 150000007524 organic acids Chemical class 0.000 claims abstract description 20
- 150000007513 acids Chemical class 0.000 claims abstract description 12
- 150000001413 amino acids Chemical class 0.000 claims abstract description 12
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 12
- 235000005985 organic acids Nutrition 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 150000001875 compounds Chemical class 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 28
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical group C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000003513 alkali Substances 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 10
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 8
- 229930195729 fatty acid Natural products 0.000 claims description 8
- 239000000194 fatty acid Substances 0.000 claims description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 150000004665 fatty acids Chemical class 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 4
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 4
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003536 tetrazoles Chemical class 0.000 claims description 2
- 238000004380 ashing Methods 0.000 claims 1
- 239000012964 benzotriazole Substances 0.000 claims 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 3
- -1 phosphate ester Chemical class 0.000 description 61
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 29
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 229910019142 PO4 Inorganic materials 0.000 description 11
- 235000021317 phosphate Nutrition 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 10
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 10
- 239000010452 phosphate Substances 0.000 description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 9
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 9
- 239000004744 fabric Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229940024606 amino acid Drugs 0.000 description 8
- 235000001014 amino acid Nutrition 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 7
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 7
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 7
- 239000005642 Oleic acid Substances 0.000 description 7
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 7
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical group C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000003999 initiator Substances 0.000 description 7
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 7
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 229960004592 isopropanol Drugs 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 150000003851 azoles Chemical class 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 4
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- CWRVKFFCRWGWCS-UHFFFAOYSA-N Pentrazole Chemical compound C1CCCCC2=NN=NN21 CWRVKFFCRWGWCS-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 description 3
- 150000005215 alkyl ethers Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003093 cationic surfactant Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229960003067 cystine Drugs 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- WRKCIHRWQZQBOL-UHFFFAOYSA-N octyl dihydrogen phosphate Chemical compound CCCCCCCCOP(O)(O)=O WRKCIHRWQZQBOL-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000011550 stock solution Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 229920003169 water-soluble polymer Polymers 0.000 description 3
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- UAZLASMTBCLJKO-UHFFFAOYSA-N 2-decylbenzenesulfonic acid Chemical compound CCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O UAZLASMTBCLJKO-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- QWCKQJZIFLGMSD-UHFFFAOYSA-N alpha-aminobutyric acid Chemical compound CCC(N)C(O)=O QWCKQJZIFLGMSD-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- CVSVTCORWBXHQV-UHFFFAOYSA-N creatine Chemical compound NC(=[NH2+])N(C)CC([O-])=O CVSVTCORWBXHQV-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- XVOYSCVBGLVSOL-UHFFFAOYSA-N cysteic acid Chemical compound OC(=O)C(N)CS(O)(=O)=O XVOYSCVBGLVSOL-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229940031098 ethanolamine Drugs 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 2
- YGPSJZOEDVAXAB-UHFFFAOYSA-N kynurenine Chemical compound OC(=O)C(N)CC(=O)C1=CC=CC=C1N YGPSJZOEDVAXAB-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- UHGIMQLJWRAPLT-UHFFFAOYSA-N octadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCCCOP(O)(O)=O UHGIMQLJWRAPLT-UHFFFAOYSA-N 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001281 polyalkylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- DJKGDNKYTKCJKD-BPOCMEKLSA-N (1s,4r,5s,6r)-1,2,3,4,7,7-hexachlorobicyclo[2.2.1]hept-2-ene-5,6-dicarboxylic acid Chemical compound ClC1=C(Cl)[C@]2(Cl)[C@H](C(=O)O)[C@H](C(O)=O)[C@@]1(Cl)C2(Cl)Cl DJKGDNKYTKCJKD-BPOCMEKLSA-N 0.000 description 1
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- FNZSVEHJZREFPF-SSDOTTSWSA-N (2r)-2-pentylbutanedioic acid Chemical compound CCCCC[C@@H](C(O)=O)CC(O)=O FNZSVEHJZREFPF-SSDOTTSWSA-N 0.000 description 1
- XBTRYWRVOBZSGM-UHFFFAOYSA-N (4-methylphenyl)methanediamine Chemical compound CC1=CC=C(C(N)N)C=C1 XBTRYWRVOBZSGM-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- UKAUYVFTDYCKQA-UHFFFAOYSA-N -2-Amino-4-hydroxybutanoic acid Natural products OC(=O)C(N)CCO UKAUYVFTDYCKQA-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- LUTLAXLNPLZCOF-UHFFFAOYSA-N 1-Methylhistidine Natural products OC(=O)C(N)(C)CC1=NC=CN1 LUTLAXLNPLZCOF-UHFFFAOYSA-N 0.000 description 1
- UQOXSYQRUXKNQH-UHFFFAOYSA-N 1-hexadecoxyhexadecane;phosphoric acid Chemical compound OP(O)(O)=O.CCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCC UQOXSYQRUXKNQH-UHFFFAOYSA-N 0.000 description 1
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- IMQFZQVZKBIPCQ-UHFFFAOYSA-N 2,2-bis(3-sulfanylpropanoyloxymethyl)butyl 3-sulfanylpropanoate Chemical compound SCCC(=O)OCC(CC)(COC(=O)CCS)COC(=O)CCS IMQFZQVZKBIPCQ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 description 1
- LTHNHFOGQMKPOV-UHFFFAOYSA-N 2-ethylhexan-1-amine Chemical compound CCCCC(CC)CN LTHNHFOGQMKPOV-UHFFFAOYSA-N 0.000 description 1
- LJKDOMVGKKPJBH-UHFFFAOYSA-N 2-ethylhexyl dihydrogen phosphate Chemical compound CCCCC(CC)COP(O)(O)=O LJKDOMVGKKPJBH-UHFFFAOYSA-N 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 1
- MLMQPDHYNJCQAO-UHFFFAOYSA-N 3,3-dimethylbutyric acid Chemical compound CC(C)(C)CC(O)=O MLMQPDHYNJCQAO-UHFFFAOYSA-N 0.000 description 1
- VCGFUDRPRFOWIF-UHFFFAOYSA-N 3-(16-methylheptadecoxy)propane-1,2-diol;phosphoric acid Chemical compound OP(O)(O)=O.CC(C)CCCCCCCCCCCCCCCOCC(O)CO VCGFUDRPRFOWIF-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- VJEFVEHNRRGNQX-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,1-diol Chemical compound C1=CC=C2N(CCC(O)O)N=NC2=C1 VJEFVEHNRRGNQX-UHFFFAOYSA-N 0.000 description 1
- BRMWTNUJHUMWMS-UHFFFAOYSA-N 3-Methylhistidine Natural products CN1C=NC(CC(N)C(O)=O)=C1 BRMWTNUJHUMWMS-UHFFFAOYSA-N 0.000 description 1
- QJZYHAIUNVAGQP-UHFFFAOYSA-N 3-nitrobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2(C(O)=O)[N+]([O-])=O QJZYHAIUNVAGQP-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical group NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 1
- YQIDDSOLYCXAEB-UHFFFAOYSA-N 4-benzylsulfanyl-2-methylbutane-1,2-diamine Chemical compound NCC(N)(C)CCSCC1=CC=CC=C1 YQIDDSOLYCXAEB-UHFFFAOYSA-N 0.000 description 1
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- IIAOJWVDGQZJOL-UHFFFAOYSA-N 4-trityl-2h-triazole Chemical compound N1N=NC(C(C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 IIAOJWVDGQZJOL-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- 229940117976 5-hydroxylysine Drugs 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- GWFKRMNDRBOERS-UHFFFAOYSA-N C(C)(=O)NC12C(CCC(C1(C)C)C2)C Chemical compound C(C)(=O)NC12C(CCC(C1(C)C)C2)C GWFKRMNDRBOERS-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 241001245789 Goodea atripinnis Species 0.000 description 1
- PMMYEEVYMWASQN-DMTCNVIQSA-N Hydroxyproline Chemical compound O[C@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-DMTCNVIQSA-N 0.000 description 1
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- FSBIGDSBMBYOPN-VKHMYHEASA-N L-canavanine Chemical compound OC(=O)[C@@H](N)CCONC(N)=N FSBIGDSBMBYOPN-VKHMYHEASA-N 0.000 description 1
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 1
- GGLZPLKKBSSKCX-YFKPBYRVSA-N L-ethionine Chemical compound CCSCC[C@H](N)C(O)=O GGLZPLKKBSSKCX-YFKPBYRVSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- UKAUYVFTDYCKQA-VKHMYHEASA-N L-homoserine Chemical compound OC(=O)[C@@H](N)CCO UKAUYVFTDYCKQA-VKHMYHEASA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- DWPCPZJAHOETAG-IMJSIDKUSA-N L-lanthionine Chemical compound OC(=O)[C@@H](N)CSC[C@H](N)C(O)=O DWPCPZJAHOETAG-IMJSIDKUSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- JDHILDINMRGULE-LURJTMIESA-N N(pros)-methyl-L-histidine Chemical compound CN1C=NC=C1C[C@H](N)C(O)=O JDHILDINMRGULE-LURJTMIESA-N 0.000 description 1
- BRMWTNUJHUMWMS-LURJTMIESA-N N(tele)-methyl-L-histidine Chemical compound CN1C=NC(C[C@H](N)C(O)=O)=C1 BRMWTNUJHUMWMS-LURJTMIESA-N 0.000 description 1
- AEAAPULBRBHRTM-UHFFFAOYSA-N N1(N=NC2=C1C=CC=C2)COP(OCN2N=NC1=C2C=CC=C1)=O Chemical compound N1(N=NC2=C1C=CC=C2)COP(OCN2N=NC1=C2C=CC=C1)=O AEAAPULBRBHRTM-UHFFFAOYSA-N 0.000 description 1
- RHGKLRLOHDJJDR-UHFFFAOYSA-N Ndelta-carbamoyl-DL-ornithine Natural products OC(=O)C(N)CCCNC(N)=O RHGKLRLOHDJJDR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FSBIGDSBMBYOPN-UHFFFAOYSA-N O-guanidino-DL-homoserine Natural products OC(=O)C(N)CCON=C(N)N FSBIGDSBMBYOPN-UHFFFAOYSA-N 0.000 description 1
- XVFQOVJWLJFUBJ-UHFFFAOYSA-N OP(O)(O)=O.CCCCCCCCCCCCCCCCCCOCC(O)CO Chemical compound OP(O)(O)=O.CCCCCCCCCCCCCCCCCCOCC(O)CO XVFQOVJWLJFUBJ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 239000004473 Threonine Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MEESPVWIOBCLJW-KTKRTIGZSA-N [(z)-octadec-9-enyl] dihydrogen phosphate Chemical compound CCCCCCCC\C=C/CCCCCCCCOP(O)(O)=O MEESPVWIOBCLJW-KTKRTIGZSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical class CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 229920003064 carboxyethyl cellulose Polymers 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229960002173 citrulline Drugs 0.000 description 1
- 235000013477 citrulline Nutrition 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229960003624 creatine Drugs 0.000 description 1
- 239000006046 creatine Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- SCIGVHCNNXTQDB-UHFFFAOYSA-N decyl dihydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(O)=O SCIGVHCNNXTQDB-UHFFFAOYSA-N 0.000 description 1
- YSMODUONRAFBET-UHFFFAOYSA-N delta-DL-hydroxylysine Natural products NCC(O)CCC(N)C(O)=O YSMODUONRAFBET-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- PMMYEEVYMWASQN-UHFFFAOYSA-N dl-hydroxyproline Natural products OC1C[NH2+]C(C([O-])=O)C1 PMMYEEVYMWASQN-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- YSMODUONRAFBET-UHNVWZDZSA-N erythro-5-hydroxy-L-lysine Chemical compound NC[C@H](O)CC[C@H](N)C(O)=O YSMODUONRAFBET-UHNVWZDZSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Natural products O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- DDRPCXLAQZKBJP-UHFFFAOYSA-N furfurylamine Chemical compound NCC1=CC=CO1 DDRPCXLAQZKBJP-UHFFFAOYSA-N 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 229960002743 glutamine Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- ZUVCYFMOHFTGDM-UHFFFAOYSA-N hexadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCOP(O)(O)=O ZUVCYFMOHFTGDM-UHFFFAOYSA-N 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000004021 humic acid Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical class Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-M isobutyrate Chemical compound CC(C)C([O-])=O KQNPFQTWMSNSAP-UHFFFAOYSA-M 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 150000002641 lithium Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- JASMWYNKLTULAN-UHFFFAOYSA-N octan-3-amine Chemical compound CCCCCC(N)CC JASMWYNKLTULAN-UHFFFAOYSA-N 0.000 description 1
- RLRKPMRCTMYDMP-UHFFFAOYSA-N octyl 2h-benzotriazole-4-carboxylate Chemical compound CCCCCCCCOC(=O)C1=CC=CC2=NNN=C12 RLRKPMRCTMYDMP-UHFFFAOYSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000002559 palpation Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000002072 seryl group Chemical group 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- 150000008027 tertiary esters Chemical class 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- KRIXEEBVZRZHOS-UHFFFAOYSA-N tetradecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCOP(O)(O)=O KRIXEEBVZRZHOS-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Definitions
- the present invention relates to a polishing composition for polishing a substrate, and more particularly to a method for producing a polishing composition for polishing a metal portion of a substrate.
- the present invention also relates to a method for brightly polishing a substrate and a method for manufacturing a substrate using the manufactured polishing composition.
- the method of manufacturing wiring using copper or copper alloy is to form a groove in the interlayer insulating film 1 1 in advance, and if necessary, a barrier film such as tantalum or tantalum nitride.
- a barrier film such as tantalum or tantalum nitride.
- damascene process in which 1 2 is formed thin and a layer of copper or copper alloy 1 3 is deposited.
- the wiring 1 3 ′ is formed by polishing to remove the copper alloy.
- MRAM magnetic storage device
- bit write lines and vertical write lines that cross the array vertically and horizontally are provided, and only elements located at the intersection region are used.
- a method of performing selective writing see, for example, Japanese Patent Laid-Open No. 10-1 1 6 4 90.
- metal wiring is formed, but metal wiring is composed of a conductor layer made of aluminum or aluminum alloy, copper or copper alloy, and a ferromagnetic layer such as nickel ferrous iron (permalloy) surrounding the conductor layer.
- a barrier film such as tantalum or tantalum nitride is formed thin so as to sandwich the ferromagnetic layer.
- This metal wiring is formed by the damascene method, but the excess conductor layer, ferromagnetic layer and barrier film are planarized and removed while polishing.
- the cap layer and antireflection film 15 formed before the formation of the barrier film 12 may be left.
- the film thickness of the anti-reflection film is thick, if the dicing is small, when the anti-reflection film has been shaved by barrier polishing, the wiring copper 1 3 ′ is raised and the wiring is shorted, etc. Cause. For this reason, a certain degree of deep dishing is formed at the time of wiring metal polishing, and measures are taken to prevent the wiring from rising during barrier polishing.
- the thickness of such an antireflection film is about several tens of nanometers, and when combined with the barrier film, it is about 20 to 100 nanometers. This thickness is the low force of the first layer It is thin in the world and thick in the global.
- the amount of dressing may change with each polishing batch due to factors other than the polishing composition (for example, deterioration of the polishing pad). If a polishing composition in which the dishing amount is adjusted for each polishing batch so as to cancel out this change amount can be used, a constant dishing can be obtained regardless of the polishing batch.
- the present invention relates to a method for producing a polishing composition capable of controlling the dicing, a substrate polishing method for flattening a substrate with the polishing composition, and a substrate production method including the step of flattening by this method. It is intended to provide a method.
- “controlling the date” means that only the amount of the date is adjusted, and other characteristics (for example, polishing rate, etc.) do not change significantly.
- the present inventors have found that the above problems can be solved by mixing two kinds of polishing compositions (preliminary compositions), and have completed the present invention.
- a metal film embedded so as to cover the recess on the substrate having the recess, or a barrier metal film is formed on the substrate having the recess to cover the recess.
- composition (A) and (B) are produced by mixing at different mixing ratios, and as a preliminary composition (A), (a) abrasive grains, (b) oxidizing agent, (c) amino acid, organic acid, One or more acids selected from the group consisting of inorganic acids, (d) a composition containing a surface active agent is used, and (a) abrasive grains, (b) as a preliminary composition (B) )
- Preliminary composition (B) Ca ⁇ (c) One or more acids selected from the group consisting of amino acids, organic acids, and inorganic acids, (d) A surfactant, In the product (A) and the preliminary composition (B), at least one of the concentrations of at least one of (a), (b), (c), (d) is different, and the plurality of types of polishing according to the above [1] A method for producing a composition.
- the concentration of one or more acids (c) selected from the group consisting of amino acids, organic acids and inorganic acids in the preliminary composition (A) is lower than that in the preliminary composition (B).
- Both the preliminary composition (A) and (B) contain the azole group-containing compound, and the concentration of the azole group-containing compound in the preliminary composition (A) is higher than that of the preliminary composition (B).
- Both the pre-compositions (A) and (B) contain the anticorrosive agent, and the anti-corrosion agent concentration of the pre-composition (A) is higher than that of the pre-composition (B).
- Both the preliminary compositions (A) and (B) contain the alkali, and the alkali concentration of the preliminary composition (A) is that of the preliminary composition (B).
- [15] A method for producing a plurality of types of polishing compositions according to any one of [1] to [14], wherein the polishing composition to be produced has a pH of 5 to 11.
- the surfactant is selected from the group consisting of an alkyl aromatic sulfonic acid having 8 or more carbon atoms, a phosphate ester having an alkyl group having 8 or more carbon atoms, and a fatty acid having an alkyl group having 8 or more carbon atoms.
- the method for producing a plurality of types of polishing compositions according to any one of the above [1] to [15], which is one type or two or more types.
- a polishing composition is produced by the method according to any one of [1] to [20], and the substrate is polished with the polishing composition, thereby adjusting the amount of substrate dicing. And polishing the substrate for planarization.
- the dicing can be controlled by polishing with a combination of two kinds of pre-compositions, a dedicated gold is used when a plurality of planarization steps are included in the manufacturing process of one IC chip. It becomes possible to produce a substrate without having to use a plurality of metal polishing compositions.
- Fig. 1 is a cross-sectional view illustrating a method of manufacturing wiring using copper or copper alloy.
- FIG. 2 is a cross-sectional view for explaining a method of manufacturing a wiring using copper or a copper alloy when an antireflection film is left.
- FIG. 3 is a cross-sectional view for explaining dating. BEST MODE FOR CARRYING OUT THE INVENTION
- the present invention is embedded on a substrate having a recess so as to cover the recess.
- a method for producing a plurality of types of polishing compositions having different amounts of dipping for forming a barrier metal film on a substrate having a metal film or a recess and polishing the metal film embedded so as to cover the recess The plurality of kinds of polishing compositions are produced by mixing two kinds of preliminary compositions having different compositions at different mixing ratios, and the polishing composition is, for example, This is a method for producing a plurality of types of polishing compositions so as to give a predetermined dishing amount in the range of nm.
- pre-compositions include: (a) abrasive grains, (b) oxidizing agents, (c) one or more acids selected from the group consisting of amino acids, organic acids, inorganic acids, and (d Pre-composition (A) containing a surfactant and (a) abrasive grains and (b) pre-composition (B) containing an oxidizing agent can be used.
- the preliminary composition (B) may further comprise (c) one or more acids selected from the group consisting of amino acids, organic acids, and inorganic acids, and (d) a surfactant.
- a surfactant selected from the group consisting of amino acids, organic acids, and inorganic acids.
- the preliminary compositions (A) and (B) can be mixed at any mixing ratio (ie, in the final polishing composition prepared by mixing) so as to give a predetermined amount of de-itching ranging from 1 to 300 nm.
- the proportion of one preliminary composition is greater than 0% and less than 100% (the proportion of the other preliminary mixture is correspondingly less than 100% and greater than 0%)) it can.
- a polishing composition When producing a polishing composition according to the present invention, it is possible to change the types of components having the same function between the two pre-mixtures. For example, the abrasive grains contained in one preliminary mixture may be different from the abrasive grains contained in the other preliminary mixture. Next, the components used in each preliminary composition will be described.
- abrasives such as silica, alumina, ceria, organic abrasives can be used as the abrasive grains. These abrasives may be used alone or in combination of two or more. The purpose of these abrasives is to increase the polishing rate sufficiently, but depending on the type of abrasive, scratches or other scratches may be made on the substrate surface.
- a preferred abrasive that suppresses scratches while sufficiently increasing the polishing rate is silica.
- a more preferable abrasive is a material mainly composed of colloidal silica produced by hydrolysis from alkoxysilane.
- the content of these abrasives may be from 0.11 to 30% by mass, preferably from 0.1 to 20% by mass, more preferably from 0.2 to 10%, based on the polishing composition at the time of polishing. % By mass. If the abrasive content is too high, scratching may occur, and if it is too low, the polishing rate cannot be increased sufficiently, or the metal film residue on the barrier film may not be eliminated.
- the size of the abrasive is preferably a particle size of 1 X m or less, more preferably from 0.11 to 0.5 m. If the abrasive particle size is too small, the polishing rate may not be increased sufficiently, and if it is too large, it may cause scratches on the metal surface such as scratches.
- the oxidizing agent used in the present invention oxidizes a metal or a metal alloy and contributes to an improvement in the polishing rate.
- Oxidizing agents include oxygen, ozone, hydrogen peroxide, alkyl peroxides such as t-butylhydride peroxide, ethylbenzenehydride peroxide, peracids such as peracetic acid and perbenzoic acid, potassium permanganate, etc.
- Permanganate, periodate such as potassium periodate, ammonium persulfate, Examples include persulfates such as potassium persulfate, hypochlorites such as potassium hypochlorite, and polyoxoacids.
- hydrogen peroxide and persulfate which are easy to handle are preferable.
- the content of the oxidizing agent may be 0.01 to 30% by mass with respect to the polishing composition at the time of polishing, preferably 0.05 to 20% by mass, and more preferably 0.1 to 10% by mass. %. If the amount is too small, the polishing rate may become too low. If the amount is too large, it is not only wasteful but also the polishing rate may be suppressed.
- An acid selected from the group consisting of inorganic acids, organic acids and amino acids used in the present invention can be added as an etchant to promote polishing and to perform stable polishing.
- amino acid is not included in the organic acid.
- examples of such inorganic acids include sulfuric acid, phosphoric acid, phosphonic acid, and nitric acid.
- Organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylethylbutyric acid, 4-methylpentanoic acid, n —Heptanoic acid, 2—Methylhexanoic acid, n—Periodic acid, 2 —Ethylhexanoic acid, Benzoic acid, Glycolic acid, Salicylic acid, Glyceric acid, Succinic acid, Malonic acid, Succinic acid, Daltaric acid And carboxylic acids such as adipic acid, pimelic acid, maleic acid, phthalic acid, phosphonic acid, tartaric acid, citrate, and lactic acid, and salts thereof.
- carboxylic acids such as adipic acid, pimelic acid, maleic acid, phthalic acid, phosphonic acid, tartaric acid, cit
- amino acids include glycine, alanine, jS-alanine, 2-aminobutyric acid, norparin, parin, leucine, normouth isine, isoleucine, aloisoleucine, phenylalanine, proline, sarcosine, oroline.
- These acids such as organic acids, organic acids and anoic acids may use seeds. ⁇ Use of more than one kind.
- the content of these acids is based on the polishing composition during polishing.
- the content may be 0.010% by mass, preferably 0.025% by mass, and more preferably ⁇ is 0.052% by mass. If the amount is too small, it is difficult to obtain a high polishing rate ⁇ If it is too large, the etching rate of metal or metal alloy may become too high. 3 ⁇ 4
- the tasting can be adjusted.However, the acid may cause corrosion. Therefore, it is preferable to adjust the concentration within a range where corrosion does not occur.
- One surfactant that can be used in the present invention is an alkyl aromatic sulfonic acid having 8 or more carbon atoms.
- alkyl aromatic sulfonic acids include decylbenzene sulfonic acid, untecyl benzene sulfonic acid, decyl benzene sulfonic acid tridecyl benzene sulphonic acid, teratesyl benzene sulfonic acid or a mixture thereof, alkyl benzene sulfonic acid, alkyl Formalin condensates of naphthalene sulfonic acid and alkyl naphthenic sulfonic acid may be mentioned.
- Such an alkyl aromatic sulfonic acid having 8 or more carbon atoms may be a salt such as strong ammonium or ammonium. Of these, Decylbenzenesulfonic acid is preferred.
- Such alkyl aromatic sulfonic acid having 8 or more carbon atoms may contain one kind or two or more kinds. The content of the aromatic sulfonic acid having 8 or more carbon atoms may be 5% by mass or less, preferably 1% by mass or less, more preferably 0.5% by mass or less, based on the polishing composition at the time of polishing. .
- Alkyl aromatic sulfonic acids having 8 or more carbon atoms are considered to contribute to the improvement of the level difference of metal films. Alkyl aromatic sulfonic acids with 8 or more carbon atoms contribute to dishing reduction when added.
- a phosphate ester having an alkyl group having 8 or more carbon atoms can also be used.
- Phosphate esters include octyl phosphate, decyl phosphate, lauryl phosphate, myristyl phosphate, cetyl phosphate, stearyl phosphate, secondary alkyl (average carbon number 13) phosphate, 2-ethylhexyl phosphate, Alkyl phosphates such as oleyl phosphate, monostearyl glyceryl ether phosphate, monocetyl daryl seryl ether phosphate, mono oleyl glyceryl monoterphosphate, isostearyl glyceryl ether phosphate, polyoxyethylene octyl ether phosphate Polyoxyethylene decyl ether phosphate, polyoxyethylene lauryl ether phosphate, polyoxyethylene myristyl ether phosphate, boroxyethylene cetyl ether
- Such phosphate ester may be a salt such as potassium or ammonium, and may be a primary, secondary, tertiary ester or a mixture thereof.
- alkyl phosphoric acid having 8 to 18 carbon atoms such as octyl phosphoric acid, lauryl phosphoric acid, stearyl phosphoric acid, polyoxyethylene lauryl ether phosphoric acid, polyoxyethylene secondary alkyl (average carbon number 1 3) ether phosphoric acid
- polyoxyalkylene ether phosphate More preferably, it is a polyoxyalkylene monoterphosphate having 10 to 15 carbon atoms.
- the phosphoric acid ester having an alkyl group having 8 or more carbon atoms used in the present invention may contain one kind or two or more kinds.
- the content of these compounds in the polishing composition at the time of polishing may be 5% by mass or less, preferably 1% by mass or less, and more preferably 0.5% by mass or less.
- Such phosphoric acid esters or polyoxyalkylene ether phosphoric acid esters exhibit dishing suppression, but when added in a small amount, the dipping suppression effect is small, and when added in a large amount, the dipping can be reduced but the high polishing rate. However, it is difficult to apply it where practical use is required.
- a fatty acid having 8 or more carbon atoms can be further used. These fatty acids having 8 or more carbon atoms can be used alone or in combination with a azole group-containing compound having a molecular weight of 300 to 15 500 having 3 or more azole groups in the molecule. Is suppressed.
- Such fatty acids having 8 or more carbon atoms include strong prillic acid, perargonic acid, strong purine acid, lauric acid, myristic acid, pendecyl acid, palmitic acid, margaric acid, stearic acid, araquinic acid.
- Saturated fatty acids such as behenic acid, lignoceric acid, serotic acid, montanic acid, and melisic acid, and unsaturated fatty acids such as eicosapenic acid, oleic acid, linoleic acid, and linolenic acid.
- These may be a salt such as humic acid, may contain one kind, or may contain two or more kinds. Of these, preferably Acid.
- Oleic acid may be used alone, or a mixture of fatty acids in which 50% by mass or more is oleic acid may be used.
- the content of such a fatty acid having 8 or more carbon atoms may be 5% by mass or less, preferably 1% by mass or less, more preferably 0.5% by mass or less as a concentration during polishing. If the amount is too large, a metal film residue on the barrier film may be generated. Therefore, it is preferable to contain the minimum amount that can sufficiently reduce the surface roughness of the metal film.
- any other cationic, cationic, anionic or nonionic surfactants can be used.
- the cationic surfactant include aliphatic amines or salts thereof, and aliphatic ammonium salts.
- the anionic surfactants include alkyl ether carboxylic acids or salts thereof, sulfate esters such as higher alcohol sulfates, alkyl ether sulfates or salts thereof, and the like.
- Nonionic surfactants include ether types such as polyoxyethylene alkyl ether, ether ester types such as glycerin ester polyoxyethylene ether, and ester types such as polyethylene glycol fatty acid ester, glycerin ester, and sorbin ester. Can be mentioned.
- a water-soluble polymer can be further added to the polishing composition of the present invention.
- water-soluble polymers include polyacrylic acid, polymethacrylic acid and its ammonium salt, polyisopropyl acrylamide, polydimethyl acrylamide, polymethyl amide, polymethoxyethylene, polyvinyl alcohol, hydroxyxetyl cellulose, Examples thereof include carboxymethyl cellulose, carboxyethyl cellulose, and polyvinyl pyrrolidone.
- the content of these water-soluble polymers and other surfactants is preferably 5% by mass or less, respectively, based on the polishing composition at the time of polishing. . More preferably, it is 1% by mass or less, and particularly preferably 0.5% by mass or less.
- an azole group-containing compound having a molecular weight of 3 00 to 15 500 having 3 or more azole groups in the molecule by being contained in one or both of two types of preliminary compositions Can be added.
- the azole group-containing compound having a molecular weight of 300 to 1500 having 3 or more azole groups in the molecule is a azole group-containing compound having 3 or more azole groups in one molecule. It can be manufactured by various methods. Examples of azoles include imidazole, triazole, tetrazol, and thiazole, and some of them have reactive substituents such as a hydroxyl group, a force oxyl group, and an amino group. Examples include 4-force lupoxyru 1 H-benzotriazole, 4-hydroxybenzotriazole, 2-aminoimidazole, and the like.
- the strong lpoxyl group reacts with a polyhydric alcohol and a polyhydric amine to produce an ester and an amide, respectively.
- a compound having three or more azoles can be produced by using a trivalent or higher compound as the polyhydric alcohol or polyvalent amine.
- a compound having three or more azol groups can be produced by reacting from a azole having a hydroxyl group or amino group with a compound having a site that reacts with them.
- an azole group-containing compound used in the present invention can be produced by polymerizing an azole having a vinyl group.
- the azole having a vinyl group include 1-vinyl imidazole, 2— [3 1 (2 H-benzotriazo 1 1-yl) 1 4-hydroxyphenyl] ethyl methacrylate, and the like.
- a polymer containing an azole unit having a vinyl group is preferred. This polymer is obtained by polymerizing an azole having a vinyl group.
- the biazole-containing azole may be polymerized alone or may be copolymerized with other pinyl compounds.
- the amount of molecules per azole group of the azole group-containing compound is 90 to 300, particularly preferably 90 to 200, Compounds can be synthesized.
- Acrylic acid methacrylic acid, methyl acrylate, methyl methacrylate, acrylic amide, N-pinylacetamide, N-vinylformamide, acryloylmorpholine, N-vinylpyrrolidone, pinyl acetate, styrene, etc. Can be mentioned.
- radical polymerization in an aqueous solution or an organic solvent is generally used.
- radical initiators such as azobisisobutyronitrile
- chain transfer agents such as dodecyl mercabtan, trimethylol propane tris (3-mercaptopropionate) and hymethylstyrene dimer. You can also.
- the molecular weight of such a polymer those having a mass average molecular weight of 300 to 1500 can be used.
- it is from 5 0 00 to; L 0 0 0 0, more preferably from 2 0 0 to 8 0 0 0, or still more preferably from 4 5 0 0 to 6 5 0 0.
- the content of the azol group-containing compound used in the present invention in the polishing composition is preferably 0.001 to 1% by mass, preferably 0.002 to 0.5% by mass, more preferably 0.03 to 0.1% by mass. Dish adjustment is possible even with an azole group-containing compound.
- the polishing composition of the present invention can be used in any of an organic solvent composition, an organic solvent / water mixture composition, and an aqueous composition. However, in consideration of cost, usability, etc., the polishing composition is an aqueous solution. It is desirable. Therefore, it is desirable that the azole group-containing compound used in the present invention is also water-soluble.
- the solubility in water of the azole group-containing compound used in the present invention is preferably at least 0.01% by mass, and more preferably at least 0.03% by mass.
- the azole group used in the present invention interacts with a metal such as copper, and this is considered to have reduced step relief and dating. Further, the azole group-containing compound used in the present invention can control the polishing rate of a barrier film such as tantalum, which is considered to be effective in obtaining a small erosion characteristic. In contrast, basic compounds commonly used to control the polishing rate of the barrier film, such as ethanolamine, reduce the erosion, but increase the step-relaxing property and the dicing. .
- the present invention uses a azole group-containing compound having 3 or more azole groups and having a molecular weight of 300 to 1500, thereby causing a complex action and reducing each of step relief, dating, and erosion.
- an azole group-containing compound having three or more azole groups having a molecular weight exceeding 15500 is likely to cause a metal residue other than the wiring, for example, on the barrier film when polishing the wiring metal.
- Use of the abrasive slurry may be limited.
- the polishing composition of the present invention further contains an anticorrosive agent (protective film forming agent). Can be made. If an anticorrosive is used, it can be included in one or both of the preliminary compositions (A) and (B).
- Components that can be used as anticorrosives include benzimidazole-2-thiol, 2- [2- (benzothiazolyl)] thiopropionic acid, 2— [2- (benzothiazolyl) thiobutyric acid, 2-mercapsenezothiazool.
- the content of the anticorrosive may be 5% by mass or less, preferably 2% by mass or less, more preferably 0.5% by mass or less, with respect to the polishing composition at the time of polishing. Inclusion of such an anticorrosive agent is effective in preventing the metal film surface from getting dirty.
- alkali can be added to the polishing composition as long as the performance and physical properties are not adversely affected.
- Alkaline is a pre-composition ( It can be included in one or both of A) and (B). Alkaline is used for the purpose of maintaining stable polishing performance, pH adjusting agent, and buffering agent.
- alkalis examples include ammonia, sodium hydroxide, potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, ammonium hydrogen carbonate, methylamine, ethylamine, propylamine, isopropylamine, ptylamine, Isoptylamine, t-Ptylamine, Amylamine, Arylamine, 2-Ethylhexylamine, Cyclohexylamine, Benzylamine, Furfurylamine and other alkylmonoamines, ⁇ -Aminophenol, Ethanol amine, 3-Amino Monoamines having a hydroxyl group such as 1-propanol, 2-amino-1-propanol, ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentaamine, pentaethylenehexamine, O—Phenylenediamine, ⁇ Limethylenediamine, 2, 2 —Diaminodi n —Propylamine, 2 ⁇
- alkalis ammonia, hydroxylated lithium, ethylenediamine, and propylenediamine are preferable.
- the addition of alkali may be 10% by mass or less, preferably 5% by mass or less, and more preferably 1% by mass or less based on the polishing composition. Some of these alkalis do not affect the date, but generally they are additives that can increase the date.
- the polishing composition used in the present invention is used between pH 2 and l 2 It is preferable to do. More preferably, the pH is 3 to 11, more preferably 5 to 10. As the reagent for adjusting pH in this way, the inorganic acid, the organic acid, and the alkali can be used.
- the polishing composition used in the present invention can be preferably used in the range of 0 to 100 ° C. In general, the vicinity of the room temperature to be used is preferable, but it is also possible to adjust the temperature of the polishing composition for the purpose of adjusting the polishing rate. If the temperature is too low, the polishing rate will not increase, and if it is less than 0, it may freeze. In addition, side reactions may occur at high temperatures.
- the temperature is preferably 10 to 50 ° C, more preferably 15 to 40 ° C.
- the dripping amount of the polishing composition used in the present invention to the polishing machine is determined by the size of the polishing machine and the wafer.
- it can be used in a range of 10 to 100 ml Z.
- it is 50 to 500 m 1 / min, and more preferably 10 00 to 400 m 1 Z min.
- Metals may be mentioned as objects to be polished, in which the polishing composition of the present invention is preferably used.
- preferable metals include platinum group metals such as aluminum, copper, iron, tungsten, nickel, tantalum, ruthenium and platinum. Or the alloy of these metals is mentioned.
- a metal film that covers the wiring part or the wiring part of the multilayer wiring part, and is embedded on the substrate having the concave part so as to cover the concave part. More preferably, it can be used for copper or a copper alloy, iron or iron alloy which becomes a wiring part of a multilayer wiring part.
- a barrier film may be formed between the wiring metal film and the substrate, and in this case, the barrier film can be polished together with the metal film.
- a barrier film material tantalum, tantalum alloy, tantalum nitride, titanium, titanium alloy and the like are preferably used. Also, between the barrier film and the interlayer insulating film The cap material may contain an antireflection film. The film thickness is about several 10 to 100 nm.
- a substrate having a metal film to be polished is pressed against the polishing cloth while supplying the polishing composition of the present invention onto the polishing cloth of the polishing surface plate.
- a method of polishing the metal film to be polished by moving the polishing surface plate and the substrate relatively is mentioned.
- a polishing apparatus a general polishing apparatus having a holder for holding a semiconductor substrate and a surface plate to which a polishing cloth is attached can be used. Since the rotation speed of the polishing platen is completely different depending on the structure and size of the polishing machine, it is difficult to specify here, but polishing is performed at 10 to 500 m / min.
- the substrate is 20 to 300 m / min, more preferably 30 to 150 m / min.
- the substrate has approximately the same number of revolutions as the polishing platen, but the number of revolutions may be slightly increased or decreased to achieve uniformity.
- the substrate is pressed against the polishing cloth through the holder, and the pressure can be 0.1 to 10 O K Pa. Since the pressure tends to be low when the rotation speed of the polishing platen is high, it is difficult to specify, but preferably 0.5 to 80 KPa, more preferably l to 50 KPa. is there.
- polishing cloth a general nonwoven fabric, polyurethane foam, or the like can be used. Many polishing cloths are grouped for the purpose of increasing the polishing speed and improving the discharge of slurry. There are XY group, K group and the like, and any group can be used for the polishing composition of the present invention. In addition, in order to prevent clogging and to perform stable polishing, the polishing cloth is dressed with a dresser with diamond or the like, but a generally known method can be used. As a method for supplying the polishing composition of the present invention onto the polishing cloth of the polishing surface plate, it is continuously supplied by a pump or the like.
- the polishing composition may be supplied as one liquid containing all components, and further, each preliminary composition may be supplied in a separate line.
- each preliminary composition may be supplied in a separate line.
- Each preliminary composition used in the present invention may be divided into a plurality of parts and / or transported or stored as a concentrated composition in consideration of convenience of handling such as liquid stability.
- it can be divided into two stock solutions of oxidizer and other solutions, or the stock solution of components other than the oxidizer is divided into those mainly composed of abrasive grains and those other than that, for a total of 3 stock solutions
- the undiluted solutions may be mixed and diluted if necessary to form a preliminary composition, and further, a kit that becomes a polishing composition used for polishing.
- the preparatory composition may be a thicker composition (for example, 2 to 5 times) as described above, and may be diluted with water at the time of production of the polishing composition so as to have a concentration suitable for polishing.
- a substrate having a flat metal film can be produced.
- This process will be further described as a method of forming wiring on the element.
- grooves and openings for forming wirings are opened in an interlayer insulating film on the substrate, and a thin barrier film is formed on the insulating film.
- a metal film for metal wiring such as copper is formed by a method such as plating so as to fill the groove and the opening.
- the metal wiring consists of a conductor layer made of aluminum or aluminum alloy, or copper or copper alloy, and a ferromagnetic layer such as nickel ferrous iron (permalloy) surrounding the conductor layer. If necessary, a barrier film such as tantalum or tantalum nitride is formed thin so as to sandwich the ferromagnetic layer. This metal wiring is formed by the damascene method, but the excess conductor layer, ferromagnetic layer, and barrier film are planarized and removed while polishing.
- the interlayer insulating film here refers to an inorganic interlayer insulating film containing a large amount of silicon such as a silicon oxide film, a hydroxysilane sesquioxane (HSQ), or a methylsilsesquioxane (MSQ), or a benzocyclobutene It is also possible to use an organic interlayer insulating film such as a film made of, or a low dielectric constant interlayer insulating film in which pores are provided.
- HSQ hydroxysilane sesquioxane
- MSQ methylsilsesquioxane
- initiator solution 1 5 5 g (hereinafter referred to as initiator solution 1) ) was added in each quantitative pump. The addition time is 4 hours for the monomer solution and 7 hours for the initiator solution 1. After the addition of initiator solution 1, the reaction was continued for 1 hour, and then dimethyl 2,2'-azobis (2-methylpropionate) 0.21 g ⁇ 'was dissolved in 2-propanol 6.59 g (Hereinafter referred to as initiator solution 2) was added. The reaction of adding the same initiator solution 2 every 1 hour (addition of additional initiator) was repeated 5 more times, and the reaction was continued for 4 hours. After cooling to room temperature, about 380 g of a brown clear solution was obtained. The brown transparent solution was concentrated with a rotary vacuum evaporator, and water dissolution was repeated twice to replace the solvent from 2-propanol with water. The solid concentration was 15% and was used for slurry preparation without isolation.
- the molecular weight of the synthesized compound (hereinafter sometimes referred to as “compound E”) was measured in terms of polyethylene glycol using gel permeation chromatography (GPC). The molecular weight was 500.000.
- Blanket wafer A silicon wafer with a uniform copper film and tantalum film (barrier film).
- Pattern wafer Silicon wafer with a groove depth of 500 nm, tantalum formed as a barrier film with a thickness of 25 nm, and a copper film with a thickness of 100 nm (see the upper figure in Figure 1) .
- Relative speed between substrate and polishing surface plate 70 m / min
- Polishing pad Mouth Dale Nitsuya IC 1 0 0 0 / SUBA 4 0 0
- Polishing composition supply rate 20 m / min
- Blanket copper, tantalum film thickness measurement Measured from sheet resistance.
- Pattern copper film thickness measurement Measured from the sheet resistance of a copper film having no pattern near the site to be evaluated.
- polishing rate The copper film and barrier film thickness were measured from the electrical resistance values before and after polishing, and converted from the polishing time.
- Polishing of pattern wafer When Mirra made by Applied Materials was used as a polishing machine, the end point was detected with a standard end point detector, and polishing was completed after 20 seconds per polishing.
- Compound E having a molecular weight of 500 was used as an azole compound.
- polishing machine As the polishing machine, an 8-inch wafer was evaluated using Mirra made by Applied Materials.
- the relative speed between the substrate and the polishing platen is 75 m / min
- the polishing composition supply rate is 20 m / min
- the pressure is 14 kPa.
- an IC 1 00 0 0 (k 1 XY group) manufactured by Rodel Nitta was used as the polishing pad.
- a preliminary composition having the composition shown in Table 1 was used.
- the components other than those shown in the table of each composition are water, and the amount of each component in the table is shown in mass% with respect to the mass of the entire composition including water.
- ammonia was used in an amount sufficient to give pH in the table.
- APS ammonium persulfate
- DBS dodecylbenzenesulfonic acid
- PE polyoxyethylene secondary alkyl ether phosphate ester
- OLA is oleic acid
- BZI benzimidazole
- PDA propylenediamine.
- Colloidal silica with a particle diameter of 120 nm was used as the abrasive force for the abrasive grains.
- Polishing compositions 1 to 15 as shown in Table 2 were prepared using one of the compositions shown in Table 1 as a preliminary composition (A) and the other as a preliminary composition (B). Polishing compositions 1, 5, and 9 using only a single premix are control examples. Polishing compositions 1 to 4 are abrasive composition, oxidizing agent, organic acid, surfactant, azole compound and anticorrosive composition 1 as a preliminary composition (A), and abrasive grains, oxidizing agent, organic acid, surface activity The composition 2 containing the agent and the azo compound was used as a preliminary composition (B), and they were mixed and polished. The dishing varies from 11 nm to 83 nm in Control 1 I was able to.
- polishing compositions 5 to 8 the composition 3 having the increased amount of the anticorrosive material of the composition 1 was used as the preliminary composition (A), and the composition 2 was used as the preliminary composition (B). Even with these polishing compositions, although the dishing was slightly smaller than the polishing compositions 1 to 4, it was possible to control from 4 nm to 125 nm of the control example 4.
- Polishing Compositions 9 to 11 have a composition 4 containing abrasive grains, an oxidizing agent, an organic acid, a surfactant, an azole compound, and an anticorrosive as a preliminary composition (A), and a propylenediamine as an alkali in composition 4.
- composition 5 to which was added was used as the preliminary composition (B).
- Dating was able to vary from 14 nm to 7 lnm in Control Example 9.
- composition 1 was used as a preliminary composition (A)
- composition 7 having an increased amount of ammonium persulfate as an oxidizing agent of composition 1 was used as a preliminary composition (B).
- the dating can also be controlled by changing the concentration of the oxidizer in the polishing composition produced by mixing the two preliminary compositions.
- composition 1 was used as the preliminary composition (A)
- composition 6 except the oxidizing agent and abrasive grains of composition 1 was used as the preliminary composition (B).
- Compound E having a molecular weight of 5 O 0 O was used as an azole compound.
- An 8-inch wafer was evaluated using Mirra manufactured by Applied Materials.
- the relative speed between the substrate and the polishing platen is 75 m / min, the polishing composition supply rate is 200 ml / min, and the pressure is 14 kPa. Polished.
- polishing pad I C 1 00 0 0 (k 1 XY groove) manufactured by Rodel Nibuta Corporation was used.
- a preliminary composition having the composition shown in Table 3 was used.
- the components other than those shown in the table of each composition are water, and the amount of each component in the table is shown in mass% with respect to the mass of the entire composition including water.
- the ammonia used was an amount sufficient to give pH in the table.
- APS represents ammonium persulfate
- DBS represents dodecylbenzenesulfonic acid
- POE polyoxyethylene secondary alkyl ether phosphate
- ⁇ LA represents oleic acid
- BZI represents benzimidazole.
- a colloidal shear force with a particle diameter of 120 nm was used as the abrasive force.
- Polishing compositions 16 to 25 as shown in Table 4 were prepared using one of the compositions shown in Table 3 as a preliminary composition (A) and the other as a preliminary composition (B). Polishing compositions 16, 20, 21, 25 using only a single premix are control examples. Polishing composition 16 to 20 was prepared by using composition 8 containing a compound having three or more abrasive grains, an oxidizing agent, an organic acid, a surfactant, an anticorrosive, and an azole as a preliminary composition (A). As the product (B), a composition 9 in which the compound having three or more azoles having the composition 8 was increased from 0.02 mass% to 0.07 mass% was used. As the polishing compositions 21 to 25, compositions 10 and 11 having increased amounts of the anticorrosives having compositions 8 and 9 were used as the preliminary compositions (A) and (B), respectively. In both cases, dating control was possible.
- Compound E having a molecular weight of 500 was used as an azole compound.
- the 8-inch wafer was evaluated using Mirra manufactured by Applied Materials. Polishing was performed at a relative speed of 75 m / min between the substrate and the polishing platen, a polishing composition supply speed of 200 ml / min, and a pressure of 14 kPa. As the polishing pad, an IC 1 00 0 0 (k-XY groove) manufactured by Kuchi Dale Nikko was used. To prepare the polishing composition, a preliminary composition having the composition shown in Table 5 was used. The components other than those shown in the table of each composition are water, and the amount of each component in the table is shown in mass% with respect to the mass of the entire composition including water.
- APS ammonium persulfate
- DBS dodecylbenzene sulfonic acid
- POE polyoxyethylene secondary alkyl ether phosphate
- OLA is oleic acid
- BZI benzimidazole.
- the abrasive colloidal silica with a particle size of 12 O nm was used.
- Polishing compositions 26 to 35 as shown in Table 6 were prepared with one of the compositions shown in Table 5 as the preliminary composition A and the other as the preliminary composition B. Polishing compositions using only a single premix are 26, 30, 31 and 35 are control examples. Polishing compositions 26 to 30 were prepared using a composition 12 containing a compound having three or more abrasive grains, an oxidizing agent, an organic acid, a surfactant, an anticorrosive, and an azole as a preliminary composition (A). As the composition (B), the composition 13 in which the compound having three or more azoles having the composition 12 was increased from 0.04% by mass to 0.08% by mass was used.
- polishing composition For the products 3 1 to 3 5, the compositions 14 and 15 with the added amount of abrasive grains of the compositions 12 and 13 were used as the preliminary compositions (A) and (B), respectively. In both cases, dating control was possible. In addition, the larger the amount of colloidal silica, the larger the dating, and it was shown that the dishing can be controlled by the amount of colloidal silli force of the abrasive grains.
- polishing machine an 8-inch wafer was evaluated using Mirra made by Applied Materials. Polishing was performed at a relative speed of 75 m / min between the substrate and the polishing surface plate, a polishing composition supply speed of 1550 ml / min, and a pressure of 14 kPa.
- the polishing pad is made by Rodel Nikko IC 1 0 0 0 (k 1 XY Glue 60290) was used.
- the polishing composition shown in Table 8 was produced.
- the components other than those shown in the table of each composition are water, and the amount of each component in the table is shown in mass% with respect to the mass of the entire composition including water.
- the amount of ammonia used was sufficient to give PH in the table.
- APS ammonium persulfate
- DBS is dodecylbenzenesulfonic acid
- OLA oleic acid.
- Colloidal silica with a particle diameter of 120 nm was used as the abrasive force of the abrasive grains.
- the pre-composition (A) and the pre-composition (B) contain different amounts of surfactant D B S.
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/300,762 US20090194504A1 (en) | 2006-05-16 | 2007-05-14 | Method for producing abrasive composition |
JP2008515605A JP5153623B2 (ja) | 2006-05-16 | 2007-05-14 | 研磨組成物の製造方法 |
EP07743725A EP2019419A4 (en) | 2006-05-16 | 2007-05-14 | METHOD FOR PRODUCING A POLISHING COMPOSITION |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-136524 | 2006-05-16 | ||
JP2006136524 | 2006-05-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007132933A1 true WO2007132933A1 (ja) | 2007-11-22 |
Family
ID=38694017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/060290 WO2007132933A1 (ja) | 2006-05-16 | 2007-05-14 | 研磨組成物の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090194504A1 (ja) |
EP (1) | EP2019419A4 (ja) |
JP (1) | JP5153623B2 (ja) |
KR (1) | KR101068483B1 (ja) |
CN (1) | CN101443890A (ja) |
TW (1) | TWI415927B (ja) |
WO (1) | WO2007132933A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
WO2010024404A1 (ja) * | 2008-08-28 | 2010-03-04 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
TWI803390B (zh) * | 2022-07-15 | 2023-05-21 | 三福化工股份有限公司 | 蝕刻液組成物及其蝕刻方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1870928A4 (en) * | 2005-04-14 | 2009-01-21 | Showa Denko Kk | POLISHING COMPOSITION |
JP5940270B2 (ja) * | 2010-12-09 | 2016-06-29 | 花王株式会社 | 研磨液組成物 |
CN102533118B (zh) * | 2010-12-10 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料 |
CN102560510B (zh) * | 2010-12-10 | 2016-12-07 | 安集微电子(上海)有限公司 | 一种金属防腐清洗液 |
CN102559061A (zh) * | 2010-12-28 | 2012-07-11 | 安集微电子(上海)有限公司 | 含有机酸的硅和铜化学机械平坦化浆料 |
US9145465B2 (en) * | 2011-10-20 | 2015-09-29 | Baker Hughes Incorporated | Low dosage kinetic hydrate inhibitors for natural gas production systems |
CN103865400A (zh) * | 2012-12-10 | 2014-06-18 | 安集微电子(上海)有限公司 | 一种磷酸酯表面活性剂在自停止抛光中的应用 |
CN104745086A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 |
US10106705B1 (en) * | 2017-03-29 | 2018-10-23 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods of use thereof |
CN107841288A (zh) * | 2017-12-12 | 2018-03-27 | 戚明海 | Cmp研磨剂及其制造方法 |
US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10759970B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
JP7222315B2 (ja) | 2019-06-13 | 2023-02-15 | 日本精工株式会社 | ダストカバー |
US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN116157487A (zh) * | 2021-03-26 | 2023-05-23 | 富士胶片电子材料美国有限公司 | 研磨组成物及其使用方法 |
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JPH10116490A (ja) | 1996-08-23 | 1998-05-06 | Motorola Inc | 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法 |
JP2004363574A (ja) * | 2003-05-12 | 2004-12-24 | Jsr Corp | 化学機械研磨剤キットおよびこれを用いた化学機械研磨方法 |
JP2005340755A (ja) * | 2003-11-14 | 2005-12-08 | Showa Denko Kk | 研磨組成物および研磨方法 |
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US6066266A (en) * | 1998-07-08 | 2000-05-23 | Lsi Logic Corporation | In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation |
JP2002151451A (ja) * | 2000-11-14 | 2002-05-24 | Jsr Corp | 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法 |
JP2003086548A (ja) * | 2001-06-29 | 2003-03-20 | Hitachi Ltd | 半導体装置の製造方法及びその研磨液 |
DE602004007718T2 (de) * | 2003-05-12 | 2008-04-30 | Jsr Corp. | Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben |
TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
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2007
- 2007-05-14 WO PCT/JP2007/060290 patent/WO2007132933A1/ja active Application Filing
- 2007-05-14 KR KR1020087024844A patent/KR101068483B1/ko not_active IP Right Cessation
- 2007-05-14 EP EP07743725A patent/EP2019419A4/en not_active Withdrawn
- 2007-05-14 US US12/300,762 patent/US20090194504A1/en not_active Abandoned
- 2007-05-14 JP JP2008515605A patent/JP5153623B2/ja not_active Expired - Fee Related
- 2007-05-14 CN CNA2007800177118A patent/CN101443890A/zh active Pending
- 2007-05-16 TW TW096117383A patent/TWI415927B/zh not_active IP Right Cessation
Patent Citations (3)
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JPH10116490A (ja) | 1996-08-23 | 1998-05-06 | Motorola Inc | 積層メモリ・セルを有する磁気ランダム・アクセス・メモリおよびその製造方法 |
JP2004363574A (ja) * | 2003-05-12 | 2004-12-24 | Jsr Corp | 化学機械研磨剤キットおよびこれを用いた化学機械研磨方法 |
JP2005340755A (ja) * | 2003-11-14 | 2005-12-08 | Showa Denko Kk | 研磨組成物および研磨方法 |
Non-Patent Citations (1)
Title |
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See also references of EP2019419A4 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
WO2010024404A1 (ja) * | 2008-08-28 | 2010-03-04 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
JPWO2010024404A1 (ja) * | 2008-08-28 | 2012-01-26 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
TWI803390B (zh) * | 2022-07-15 | 2023-05-21 | 三福化工股份有限公司 | 蝕刻液組成物及其蝕刻方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101443890A (zh) | 2009-05-27 |
KR20080103596A (ko) | 2008-11-27 |
KR101068483B1 (ko) | 2011-09-28 |
EP2019419A4 (en) | 2011-04-20 |
TWI415927B (zh) | 2013-11-21 |
TW200813200A (en) | 2008-03-16 |
EP2019419A1 (en) | 2009-01-28 |
JP5153623B2 (ja) | 2013-02-27 |
JPWO2007132933A1 (ja) | 2009-09-24 |
US20090194504A1 (en) | 2009-08-06 |
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