CN116157487A - 研磨组成物及其使用方法 - Google Patents
研磨组成物及其使用方法 Download PDFInfo
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- CN116157487A CN116157487A CN202280006341.2A CN202280006341A CN116157487A CN 116157487 A CN116157487 A CN 116157487A CN 202280006341 A CN202280006341 A CN 202280006341A CN 116157487 A CN116157487 A CN 116157487A
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
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- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本公开涉及研磨组成物,其包括(1)至少一种磨料;(2)至少一种有机酸或其盐;(3)至少一种胺化合物;(4)至少一种氮化物去除速率降低剂;及(5)水性溶剂。
Description
相关申请的交叉引用
本申请要求于2021年3月26日提交的美国临时申请编号63/166,340的优先权,其全部内容在此通过引用并入。
背景技术
半导体产业不断地通过制程及集成创新使组件进一步小型化,从而提高晶圆性能。化学机械研磨/平坦化(Chemical Mechanical Polishing/Planarization,CMP)是一项强大的技术,因为其使许多晶体管层次的复杂集成方案成为可能,从而促进晶圆密度的增加。
CMP是一种通过使用基于磨损的物理过程与基于表面的化学反应同时去除材料来平坦化/平面化晶圆表面的制程。一般而言,CMP制程涉及将CMP浆料(如,水性化学制剂)施加到晶圆表面上,同时使晶圆表面与研磨垫接触并相对于晶圆移动研磨垫。浆料通常包括磨料组份及溶解的化学组分,根据在CMP过程期间晶圆上用于与浆料及研磨垫相互作用的材料的不同(如,金属、金属氧化物、金属氮化物、介电材料,如氧化硅及氮化硅等),对应的浆料有明显的差异。
钼是一种过渡金属,具有很低的化学反应性、高硬度、极佳的导电性、强耐磨性及高耐腐蚀性。钼还可以与其他元素形成杂多及合金化合物。就其在微电子产业中的用途而言,钼及其合金可用作互连、扩散阻挡层、光掩膜及塞填充材料。然而,由于其硬度和耐化学性,钼很难以高去除速率(removal rate,RR)及低缺陷率研磨,这对含钼基材的CMP是一个重大挑战。
发明内容
提供发明内容是为了介绍以下在具体实施方式中进一步描述的概念的选择。本发明内容不旨在识别所要求保护的主题的关键或基本特征,也不旨在帮助限制所要求保护的主题的范围。
本公开是基于意外发现某些研磨组成物可在CMP过程期间相对于半导体基材中的其它材料(即,氮化硅)以受控的方式选择性地去除钼(Mo)及/或其合金,对Mo具有优异的耐腐蚀性及低静态蚀刻速率。
一方面,本公开的特征在于一种研磨组成物,其包括至少一种磨料;至少一种有机酸或其盐;至少一种胺化合物,该至少一种胺化合物包括胺基酸、具有6-24个碳烷基链的烷基胺,或其的混合物;至少一种氮化物去除速率降低剂;及水性溶剂;其中该研磨组成物具有约2至约9的pH。
另一方面,本公开的特征在于一种方法,其包括(a)将本文所述的研磨组成物施加到一基材上,该基材表面上含有钼或其合金;及(b)使一垫与该基材的表面接触并相对于该基材移动该垫。
具体实施方式
本公开涉及研磨组成物及使用该研磨组成物来研磨半导体基材的方法。在一些实施例中,本公开涉及研磨组成物,其用于研磨包括至少一个含钼(Mo)金属及其合金的部分的基材。在一或多个实施例中,本公开涉及研磨组成物,其用于研磨包括至少一个含钼(Mo)金属及其合金的部分的基材且具有停在(即,实质上不去除)介电材料(如,氮化物,如氮化硅)上的能力。
在一或多个实施例中,本文所述的研磨组成物可包括至少一种磨料、至少一种有机酸或其盐、至少一种胺化合物、至少一种氮化物去除速率降低剂及水性溶剂。在一或多个实施例中,根据本公开的研磨组成物可包括重量百分比从约0.01%至约50%的至少一种磨料、重量百分比从约0.001%至约10%的至少一种有机酸、重量百分比从约0.001%至约5%的至少一种胺化合物、重量百分比从约0.001%至约10%的至少一种氮化物去除速率降低剂及剩余重量百分比(如,重量百分比从约30%至约99.99%)的水性溶剂(如,去离子水)。
在一或多个实施例中,本公开提供一种浓缩研磨组成物,其可在使用前用水稀释最多2倍,或最多4倍,或最多6倍,或最多8倍,或最多10倍,或最多15倍,或最多20倍。在其它实施例中,本公开提供一种使用点(point-of-use,POU)研磨组成物,其包含上述研磨组成物、水及任选地氧化剂。
在一或多个实施例中,一种POU研磨组成物可包括重量百分比从约0.01%至约25%的至少一种磨料、重量百分比从约0.001%至约1%的至少一种有机酸、重量百分比从约0.001%至约0.5%的至少一种胺化合物、重量百分比从约0.001%至约1%的至少一种氮化物去除速率降低剂及剩余重量百分比(如,从约65%至约99.99%)的水性溶剂(如,去离子水)。
在一或多个实施例中,一种浓缩研磨组成物可包括重量百分比从0.02%至约50%的至少一种磨料、重量百分比从约0.01%至约10%的至少一种有机酸、重量百分比从约0.01%至约5%的至少一种胺化合物、重量百分比从约0.01%至约10%的至少一种氮化物去除速率降低剂及剩余重量百分比(如,从约35%至约99.98%)的水性溶剂(如,去离子水)。
在一或多个实施例中,本文所述的研磨组成物可包含至少一种(如,二或三种)磨料。在一或多个实施例中,该至少一种磨料是选自于由阳离子磨料、实质上中性磨料及阴离子磨料所组成的群组。在一或多个实施例中,该至少一种磨料是选自于由下列所组成的群组:氧化铝、二氧化硅、氧化钛、氧化铈、氧化锆、其的共成形产物(即,氧化铝、二氧化硅、氧化钛、氧化铈或氧化锆的共成形产物)、涂布磨料、表面改性磨料,及其的混合物。在一些实施例中,该至少一种磨料不包括氧化铈。在一些实施例中,该至少一种磨料具有高纯度,且可具有小于约100ppm的醇、小于约100ppm的氨及小于约100ppb的碱阳离子如钠阳离子。以POU研磨组成物的总重量为基础,该磨料存在的量可从约0.01%至约12%(如,从约0.5%至约10%)或其任一个子范围。
在一或多个实施例中,该磨料是二氧化硅基磨料,如选自于由胶态二氧化硅、气相二氧化硅及其的混合物所组成的群组中的一种。在一或多个实施例中,该磨料可用有机基团及/或非硅质无机基团进行表面改性。例如,该阳离子磨料可包括式(I)的端基:
-Om-X-(CH2)n-Y (I),
其中m是从1至3的一整数;n是从1至10的一整数;X是Al、Si、Ti、Ce或Zr;及Y是阳离子胺基或硫醇基。作为另一个例子,该阴离子磨料可包括式(I)的端基:
-Om-X-(CH2)n-Y (I),
其中m是从1至3的一整数;n是从1至10的一整数;X是Al、Si、Ti、Ce或Zr;及Y是酸基。
在一或多个实施例中,本文所述的磨料可具有从至少约1nm(如,至少约5nm、至少约10nm、至少约20nm、至少约40nm、至少约50nm、至少约60nm、至少约80nm或至少约100nm)至最多约1000nm(如,最多约800nm、最多约600nm、最多约500nm、最多约400nm或最多约200nm)的平均粒度。本文中所使用的平均粒度(mean particle size,MPS)是通过动态光散射技术测定。
在一或多个实施例中,该至少一种磨料的量为本文所述的研磨组成物的重量的至少约0.01%(如,至少约0.05%、至少约0.1%、至少约0.2%、至少约0.4%、至少约0.5%、至少约0.6%、至少约0.8%、至少约1%、至少约1.2%、至少约1.5%、至少约1.8%或至少约2%)至最多约50%(如,最多约45%、最多约40%、最多约35%、最多约30%、最多约25%、最多约20%、最多约15%、最多约12%、最多约10%、最多约5%、最多约4%、最多约3%、最多约2%、最多约1%)。
在一或多个实施例中,本文所述的研磨组成物包括至少一种(如,二或三种)有机酸或该有机酸的盐。在一些实施例中,该有机酸可为包括一或多个(如,二、三或四个)羧酸基团的羧酸,如二羧酸或三羧酸。在一或多个实施例中,该有机酸是选自于由下列所组成的群组:葡萄糖酸、乳酸、柠檬酸、酒石酸、苹果酸、羟乙酸、丙二酸、甲酸、草酸、乙酸、丙酸、过乙酸、丁二酸、乳酸、胺基乙酸、苯氧乙酸、二羟乙甘胺酸、缩二羟乙酸、甘油酸及其的混合物。不希望受理论的约束,据信有机酸(如上述那些)可用作本文所述的研磨组成物中的有效的金属去除速率增强剂,以提高半导体基材中钼及/或其合金的去除速率。
在一个或多个实施例中,该至少一种有机酸或其盐的量为本文所述的研磨组成物的总重量的至少约0.001%(如,至少约0.003%、至少约0.005%、至少约0.01%、至少约0.03%、至少约0.05%、至少约0.1%、至少约0.3%、至少约0.5%、至少约1%、至少约1.3%或至少约1.5%)至最多约10%(如,最多约9%、最多约8%、最多约7%、最多约6%、最多约5%、最多约4%、最多约3%、最多约2.5%、最多约2.2%、最多约2%、最多约1.7%、最多约1.5%、最多约1.2%、最多约1%、最多约0.7%、最多约0.5%、最多约0.2%、最多约0.15%、最多约0.1%、最多约0.07%或最多约0.05%)。在该研磨组成物中包含超过一种有机酸的实施例中,上述范围可独立地适用于每一种有机酸,或适用于该组成物中有机酸的总量。
在一或多个实施例中,本文所述的研磨组成物包括至少一种(如,二或三种)胺化合物。在一或多个实施例中,该胺化合物可为胺基酸。在一或多个实施例中,该胺化合物可为选自于由下列所组成的群组的胺基酸:三(羟甲基)甲基甘胺酸(tricine)、丙胺酸、组胺酸、缬胺酸、苯丙胺酸、脯胺酸、麸酰胺酸、天冬胺酸、麸胺酸、精胺酸、离胺酸、酪胺酸、丝胺酸、白胺酸、异白胺酸、甘胺酸、色胺酸、天冬酰胺酸、半胱胺酸、甲硫胺酸、天冬胺酸盐、麸胺酸盐、苏胺酸、牛磺酸及其的混合物。在一或多个实施例中,该胺化合物可为包括至少二个胺基的胺基酸(如,组胺酸、离胺酸、精胺酸等)。在一或多个实施例中,该胺化合物可为烷基胺化合物,该烷基胺化合物具有至少一个(如,二或三个)包括6至24个(即6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23或24个)碳的烷基链。在一或多个实施例中,该烷基链可为直链、支链或环状烷基。在一或多个实施例中,该烷基胺化合物可为一级、二级、三级或环状胺化合物。在一或多个实施例中,该烷基胺化合物可为烷氧基化胺(如,包括乙氧基化物及/或丙氧基化物基团)。在一或多个实施例中,该烷氧基化胺可包括2至100个乙氧基化物及/或丙氧基化物基团。在一些实施例中,该至少一种烷基胺化合物具有包括6至18个碳的烷基链。在一些实施例中,该烷基胺是选自于由下列所组成的群组:己胺、辛胺、癸胺、十二烷胺、十四烷胺、十五烷胺、十六烷胺、十八烷胺、环己胺、二环己胺及其的混合物。在一些实施例中,本文所述的研磨组成物可包括至少一种胺基酸及至少一种烷基胺化合物二者。不希望受理论的约束,令人惊讶的是,上述的胺化合物可以显著地降低或最小化半导体基材中钼及/或其合金的腐蚀或蚀刻,从而控制钼及/或其合金的去除速率。
在一或多个实施例中,该至少一种胺化合物的量为本文所述的研磨组成物的总重量的至少约0.001%(如,至少约0.003%、至少约0.005%、至少约0.01%、至少约0.03%、至少约0.05%、至少约0.1%、至少约0.3%、至少约0.5%)至最多约5%(如,最多约4.5%、最多约4%、最多约3.5%、最多约3%、最多约2.5%、最多约2%、最多约1.5%、最多约1%、最多约0.8%、最多约0.6%、最多约0.5%、最多约0.4%、最多约0.2%、最多约0.1%、最多约0.08%、最多约0.05%、最多约0.02%、最多约0.01%、最多约0.0075%或最多约0.005%)。
在一或多个实施例中,该至少一种(如,二或三种不同的)氮化物去除速率降低剂包括化合物(如,非聚合化合物),该化合物包括疏水部分,其含有C6至C40烃基(如,含有烷基、烯基、芳基(如,苯基)及/或芳烷基(如,苯甲基));及亲水部分,其含有至少一个选自于由下列所组成的群组的基团:亚磺酸酯基团(sulfinite group)、硫酸酯基团、磺酸酯基团、羧酸酯基团、磷酸酯基团及膦酸酯基团。在一或多个实施例中,该疏水部分与该亲水部分之间相隔0至10个(如,1、2、3、4、5、6、7、8或9个)环氧烷基团(如,-(CH2)nO-基团,其中n可为1、2、3或4)。在一或多个实施例中,该氮化物去除速率降低剂的疏水部分与亲水部分之间相隔零个环氧烷基团。不希望受理论的约束,据信在一些实施例中,在氮化物去除速率降低剂内存在环氧烷基团可能不是优选的,因为环氧烷基团可能会产生浆料稳定性的问题及增加氮化硅的去除速率。
在一或多个实施例中,该氮化物去除速率降低剂具有含烃基的疏水部分,该烃基包括至少6个碳原子(C6)(如,至少8个碳原子(C8)、至少10个碳原子(C10)、至少12个碳原子(C12)、至少14个碳原子(C14)、至少16个碳原子(C16)、至少18个碳原子(C18)、至少20个碳原子(C20)或至少22个碳原子(C22))及/或最多40个碳原子(C40)(如,最多38个碳原子(C38)、最多36个碳原子(C36)、最多34个碳原子(C34)、最多32个碳原子(C32)、最多30个碳原子(C30)、最多28个碳原子(C28)、最多26个碳原子(C26)、最多24个碳原子(C24)或最多22个碳原子(C22))。本文所提及的烃基,意指含有碳及氢原子且任选地被一或多个卤素(如,F、Cl、Br或I)、C1-C40烷氧基或芳氧基取代的基团。该烃基可包括饱和基团(如,直链、支链或环状烷基)及不饱和基团(如,直链、支链或环状烯基;直链、支链或环状炔基;或芳族基团(如,苯基、苯甲基或萘基))。在一个或多个实施例中,该氮化物去除速率降低剂的亲水部分含有至少一个选自于磷酸酯基团及膦酸酯基团的基团。应注意,术语“膦酸酯基团”明确旨在包括膦酸基团。
在一或多个实施例中,该氮化物去除速率降低剂是选自于由下列所组成的群组:磷酸月桂酯、磷酸肉豆蔻酯、磷酸鲸蜡酯、磷酸硬脂酯、十八烷基膦酸、磷酸油酯、磷酸山嵛酯、硫酸十八烷基酯、磷酸三十二烷基酯、油醇聚醚-3-磷酸酯、油醇聚醚-10-磷酸酯、1,4-苯二膦酸、十二烷基膦酸、癸基膦酸、己基膦酸、辛基膦酸、苯基膦酸、1,8-辛基二膦酸、2,3,4,5,6-五氟苯甲基膦酸、十七氟癸基膦酸及12-五氟苯氧基十二烷基膦酸。
在一或多个实施例中,该氮化物去除速率降低剂可包括阴离子聚合物。在一或多个实施例中,该阴离子聚合物可包括一或多种阴离子基团,如亚磺酸酯基团(sulfinitegroup)、硫酸酯基团、磺酸酯基团、羧酸酯基团、磷酸酯基团及膦酸酯基团。在一或多个实施例中,该阴离子聚合物是由一或多种选自于由下列所组成的群组的单体形成:(甲基)丙烯酸、顺丁烯二酸、丙烯酸、乙烯基膦酸、乙烯基磷酸、乙烯基磺酸、烯丙基磺酸、苯乙烯磺酸、丙烯酰胺、丙烯酰胺丙基磺酸及次亚膦酸钠(sodium phosphinite)。在更具体的实施例中,该阴离子聚合物可选自于由下列所组成的群组:聚(4-苯乙烯磺酸)(PSSA)、聚丙烯酸(PAA)、聚(乙烯基膦酸)(PVPA)、聚(2-丙烯酰胺-2-甲基-1-丙磺酸)、聚(N-乙烯基乙酰胺)(PNVA)、聚乙烯亚胺(PEI)、阴离子聚(甲基丙烯酸甲酯)(PMMA)、阴离子聚丙烯酰胺(PAM)、聚天冬胺酸(PASA)、阴离子聚(丁二酸乙烯酯)(PES)、阴离子聚丁二酸丁二醇酯(PBS)、聚(乙烯醇)(PVA)、2-丙烯酸与2-甲基-2-((1-侧氧-2-丙烯基)胺基)-1-丙磺酸单钠盐及次亚磷酸钠(sodium phosphinite)的共聚物、2-丙烯酸与2-甲基-2-((1-侧氧-2-丙烯基)胺基)-1-丙磺酸单钠盐及亚硫酸氢钠钠盐的共聚物及2-丙烯酰胺-2-甲基-1-丙磺酸-丙烯酸共聚物、聚(4-苯乙烯磺酸-共-丙烯酸-共-乙烯基膦酸)三元共聚物,及其的混合物。不希望受理论的约束,据信阴离子聚合物可溶解晶圆表面上的疏水性研磨材料及/或缺陷并促进其在CMP制程及/或CMP后清洁制程期间的去除。
在一或多个实施例中,该阴离子聚合物可具有范围从至少约250g/mol(如,至少约500g/mol、至少约1000g/mol、至少约2,000g/mol、至少约5,000g/mol、至少约50,000g/mol、至少约100,000g/mol、至少约200,000g/mol或至少约250,000g/mol)至最多约500,000g/mol(如,最多约400,000g/mol、最多约300,000g/mol、最多约200,000g/mol、最多约100,000g/mol,或最多约50,000g/mol,或最多约10,000g/mol)的重量平均分子量。在一些实施例中,该至少一种阴离子聚合物可具有范围从至少约1000g/mol至最多约10,000g/mol的重量平均分子量。在一些实施例中,该阴离子聚合物可具有范围从至少约2,000g/mol至最多约6,000g/mol的重量平均分子量。在又一些实施例中,该阴离子聚合物可具有约5,000g/mol的重量平均分子量。
在一或多个实施例中,本文所述的至少一种氮化物去除速率降低剂可包括(1)至少一种(如,二或三种)化合物(如,非聚合化合物),其包括疏水部分及亲水部分及(2)至少一种(如,二或三种)阴离子聚合物。
在一或多个实施例中,该氮化物去除速率降低剂的量为本文所述的研磨组成物的重量的至少约0.001%(如,至少约0.003%、至少约0.005%、至少约0.01%、至少约0.03%、至少约0.05%、至少约0.1%、至少约0.3%、至少约0.5%)至最多约10%(如,最多约9%、最多约8%、最多约7%、最多约6%、最多约5%、最多约4%、最多约3%、最多约2%、最多约1%、最多约0.8%、最多约0.6%、最多约0.5%、最多约0.4%、最多约0.2%、最多约0.1%、最多约0.08%、最多约0.05%、最多约0.02%、最多约0.0075%或最多约0.005%)。不希望受理论的约束,据信上述氮化物去除速率降低剂可显著地减少研磨组成物对氮化物基材材料(如,氮化硅)的去除速率,从而提供在此类基材材料上停止的能力。
在一或多个实施例中,若需要,本文所述的研磨组成物可任选地包括至少一种(如,二或三种)pH调节剂,以便将pH调节至所需值。在一些实施例中,该至少一种pH调节剂可为酸(如,有机或无机酸)或碱(如,有机或无机碱)。例如,该pH调节剂可选自于由下列所组成的群组:硝酸、盐酸、硫酸、丙酸、柠檬酸、丙二酸、氢溴酸、氢碘酸、过氯酸、氨、氢氧化铵、氢氧化钠、氢氧化钾、氢氧化铯、单乙醇胺、二乙醇胺、三乙醇胺、甲基乙醇胺、甲基二乙醇胺、四丁基氢氧化铵、四丙基氢氧化铵、四乙基氢氧化铵、四甲基氢氧化铵、乙基三甲基氢氧化铵、二乙基二甲基氢氧化铵、二甲基二丙基氢氧化铵、苯甲基三甲基氢氧化铵、三(2-羟乙基)甲基氢氧化铵、氢氧化胆碱及其任何组合。
在一或多个实施例中,该至少一种pH调节剂的量为本文所述的研磨组成物的重量的至少约0.001%(如,至少约0.005%、至少约0.01%、至少约0.05%、至少约0.1%、至少约0.2%、至少约0.4%、至少约0.5%、至少约1%或至少约1.5%)至最多约2.5%(如,最多约2%、最多约1.5%、最多约1%、最多约0.5%、最多约0.1%或最多约0.5%)。
在一或多个实施例中,本文所述的研磨组成物可为酸性或碱性的。在一些实施例中,该研磨组成物可具有范围从至少约2至最多约9的pH。例如,该pH的范围可从至少约2(如,至少约2.5、至少约3、至少约3.5、至少约4、至少约4.5或至少约5)至最多约9(如,最多约8.5、最多约8、最多约7.5、最多约7、最多约6.5、最多约6、最多约6.5或最多约5)。在一或多个实施例中,本文所述的研磨组成物可具有酸性pH,如重量百分比从约2至约6(如,从约2至约4)。不希望受理论的约束,据信,在此酸性条件下,本文所述的研磨组成物可具有提高的钼去除速率及降低的氮化物材料(如,氮化硅)去除速率。
在一或多个实施例中,本文所述的研磨组成物可包括溶剂(如,第一溶剂),如水性溶剂(如,水或包括水的溶剂及有机溶剂)。在一些实施例中,该溶剂(如,水)的量为本文所述的研磨组成物的重量的至少约20%(如,至少约25%、至少约30%、至少约35%、至少约40%、至少约45%、至少约50%、至少约55%、至少约60%、至少约65%、至少约70%、至少约75%、至少约80%、至少约85%、至少约90%、至少约92%、至少约94%、至少约95%或至少约97%)至最多约99%(如,最多约98%、最多约96%、最多约94%、最多约92%、最多约90%、最多约85%、最多约80%、最多约75%、最多约70%或最多约65%)。
在一或多个实施例中,在本公开的研磨组成物(如,POU或浓缩研磨组成物)中可使用一任选的第二溶剂(如,有机溶剂),该第二溶剂可帮助溶解成分(如,含唑类腐蚀抑制剂,若存在的话)。在一或多个实施例中,该第二溶剂可为一或多种醇类、烷二醇类或烷二醇醚类。在一或多个实施例中,该第二溶剂包括一或多种选自于由下列所组成的群组:乙醇、1-丙醇、2-丙醇、正丁醇、丙二醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇丙醚及乙二醇的溶剂。
在一些实施例中,该第二溶剂的量为本文所述的研磨组成物的重量的至少约0.001%(如,至少约0.005%、至少约0.01%、至少约0.02%、至少约0.05%、至少约0.1%、至少约0.2%、至少约0.4%、至少约0.5%、至少约0.6%、至少约0.8%、至少约1%、至少约3%、至少约5%或至少约10%)至最多约10%(如,最多约7.5%、最多约5%、最多约3%、最多约2%、最多约1%、最多约0.8%、最多约0.6%、最多约0.5%或最多约0.1%)。
在一或多个实施例中,本文所述的研磨组成物可进一步包括至少一种选自于由下列所组成的群组的任择的添加剂:螯合剂、唑类化合物、氧化剂、界面活性剂、腐蚀抑制剂及水溶性聚合物。
该螯合剂没有特别限制,但其具体例子包括由下列所组成的群组:1,2-乙二磺酸、4-胺基-3-羟基-1-萘磺酸、8-羟喹啉-5-磺酸、胺基甲磺酸、苯磺酸、羟胺O-磺酸、甲磺酸、间二甲苯-4-磺酸、聚(4-苯乙烯磺酸)、聚茴香脑磺酸、对甲苯磺酸、三氟甲磺酸、乙二胺四乙酸、二伸乙三胺五乙酸、氮三乙酸、乙酰丙酮、胺基三(亚甲基膦酸)、1-羟亚乙基(1,1-二膦酸)、2-膦酰基-1,2,4-丁烷三羧酸、六亚甲基二胺四(亚甲基膦酸)、乙二胺-四(亚甲基膦酸)、二伸乙三胺五(亚甲基膦酸),其的盐类,及其的混合物。
在一些实施例中,该螯合剂可占本文所述的研磨组成物的重量的至少约0.001%(如,至少约0.002%、至少约0.003%、至少约0.004%、至少约0.005%、至少约0.006%、至少约0.007%、至少约0.008%、至少约0.009%或至少约0.01%)至最多约10%(如,最多约9%、最多约8%、最多约7%、最多约6%、最多约5%、最多约4%、最多约3%、最多约2%、最多约1%、最多约0.8%、最多约0.6%、最多约0.5%、最多约0.4%、最多约0.2%、最多约0.1%、最多约0.08%、最多约0.05%、最多约0.02%、最多约0.0075%或最多约0.005%)。
该唑类化合物没有特别限制,但其具体例子包括杂环唑类、取代或未取代的三唑类(如,苯并三唑)、取代或未取代的四唑类、取代或未取代的二唑类(如,咪唑、苯并咪唑、噻二唑及吡唑)及取代或未取代的苯并噻唑类。在此,取代的二唑、三唑或四唑意指经由例如羧基、烷基(如,甲基、乙基、丙基、丁基、戊基或己基)、卤素基团(如,F、Cl、Br或I)、胺基或羟基,取代该二唑、三唑或四唑中的一或二个或多个氢原子所获得的产物。在一或多个实施例中,该唑类化合物可选自于由下列所组成的群组:四唑、苯并三唑、甲苯基三唑、甲基苯并三唑(如,1-甲基苯并三唑、4-甲基苯并三唑及5-甲基苯并三唑)、乙基苯并三唑(如,1-乙基苯并三唑)、丙基苯并三唑(如,1-丙基苯并三唑)、丁基苯并三唑(如,1-丁基苯并三唑及5-丁基苯并三唑)、戊基苯并三唑(如,1-戊基苯并三唑)、己基苯并三唑(如,1-己基苯并三唑及5-己基苯并三唑)、二甲基苯并三唑(如,5,6-二甲基苯并三唑)、氯苯并三唑(如,5-氯苯并三唑)、二氯苯并三唑(如,5,6-二氯苯并三唑)、氯甲基苯并三唑(如,1-(氯甲基)-1-H-苯并三唑)、氯乙基苯并三唑、苯基苯并三唑、苯甲基苯并三唑、胺基三唑、胺苯并咪唑、吡唑、咪唑、胺基四唑、腺嘌呤、苯并咪唑、噻苯达唑(thiabendazole)、1,2,3-三唑、1,2,4-三唑、1-羟基苯并三唑、2-甲基苯并噻唑、2-胺基苯并咪唑、2-胺基-5-乙基-1,3,4-噻二唑、3,5-二胺基-1,2,4-三唑、3-胺基-5-甲基吡唑、4-胺基-4H-1,2,4-三唑、胺基四唑、四唑、苯基四唑、苯基-四唑-5-硫醇及其的组合。不希望受理论的约束,据信唑类化合物可用作本文所述的研磨组成物中的腐蚀抑制剂,以降低研磨过程期间某些材料(如,金属或介电材料)的去除。
在一些实施例中,该唑类化合物可占本文所述的研磨组成物的重量的至少约0.001%(如,至少约0.002%、至少约0.004%、至少约0.005%、至少约0.006%、至少约0.008%、至少约0.01%、至少约0.02%、至少约0.04%、至少约0.05%、至少约0.06%、至少约0.08%或至少约0.1%)至最多约5%(如,最多约4.5%、最多约4%、最多约3.5%、最多约3%、最多约2.5%、最多约2%、最多约1.5%、最多约1%,最多约0.9%、最多约0.8%、最多约0.7%、最多约0.6%、最多约0.5%、最多约0.4%、最多约0.3%、最多约0.2%、最多约0.18%、最多约0.16%、最多约0.15%、最多约0.14%、最多约0.12%、最多约0.1%、最多约0.08%、最多约0.06%、最多约0.05%、最多约0.04%、最多约0.03%、最多约0.02%或最多约0.01%)。
该氧化剂没有特别限制,但其具体例子包括过硫酸铵、过硫酸钾、过氧化氢、硝酸铁、硝酸二铵铈、硫酸铁、次氯酸、臭氧、过碘酸钾及过乙酸。不希望受理论的约束,据信该氧化剂可促进研磨过程期间材料的去除。
在一些实施例中,该氧化剂可占本文所述的研磨组成物的重量的至少约0.01%(如,至少约0.05%、至少约0.1%、至少约0.2%、至少约0.3%、至少约0.4%、至少约0.5%、至少约0.6%、至少约0.7%、至少约0.8%、至少约0.9%、至少约1%、至少约1.5%或至少约2%)至最多约10%(如,最多约9%、最多约8%、最多约7%、最多约6%、最多约5%、最多约4%、最多约3%、最多约2%或最多约1%)。
在一或多个实施例中,本文所述的研磨组成物还可包括一或多种选自于由下列所组成的群组的界面活性剂:阴离子界面活性剂、非离子界面活性剂、两性界面活性剂、阳离子界面活性剂及其的混合物。
该阳离子界面活性剂没有特别限制,但其具体例子包括脂族胺盐及脂族铵盐。
该非离子界面活性剂没有特别限制,但其具体例子包括醚类界面活性剂、醚酯类界面活性剂、酯类界面活性剂及乙炔基界面活性剂。该醚类界面活性剂没有特别限制,但其具体例子包括聚乙二醇单-4-壬基苯基醚、聚乙二醇单油基醚及三乙二醇单十二烷基醚。该醚酯类界面活性剂没有特别限制,但其具体例子是甘油酯的聚氧乙烯醚。该酯类界面活性剂没有特别限制,但其具体例子包括聚乙二醇脂肪酸酯、甘油酯及山梨醇酯。该乙炔基界面活性剂没有特别限制,但其具体例子包括乙炔醇、乙炔二醇(acetylene glycol)及乙炔二醇(acetylene diol)的环氧乙烷加成物。
该两性界面活性剂没有特别限制,但其具体例子包括甜菜碱基界面活性剂。
该阴离子界面活性剂没有特别限制,但其具体例子包括羧酸盐、磺酸盐、硫酸盐及磷酸盐。该羧酸盐没有特别限制,但其具体例子包括脂肪酸盐(如,皂)及烷基醚羧酸盐。该磺酸盐的例子包括烷基苯磺酸盐、烷基萘磺酸盐及α-烯烃磺酸盐。该硫酸盐没有特别限制,但其具体例子包括高级醇硫酸盐及烷基硫酸盐。该磷酸盐没有特别限制,但其具体例子包括烷基磷酸盐及烷基酯磷酸盐。
该腐蚀抑制剂没有特别限制,但其具体例子包括氢氧化胆碱、胺基醇(如,单乙醇胺及3-胺基-4-辛醇)、胺基酸(如,本文所述的那些)及其的混合物。
该水溶性聚合物没有特别限制,但其具体例子包括聚丙烯酰胺、聚乙烯醇、聚乙烯吡咯烷酮、聚丙烯酸、羟乙基纤维素及包括的前所列的聚合物的共聚物。不希望受理论的约束,据信该水溶性聚合物可用作去除速率抑制剂,以降低研磨过程期间基材上某些不打算去除或应该以较低的去除速率去除的暴露材料的去除速率。
在一或多个实施例中,该水溶性聚合物可占本文所述的研磨组成物的重量的至少约0.01%(如,至少约0.02%、至少约0.03%、至少约0.04%、至少约0.05%、至少约0.06%、至少约0.07%、至少约0.08%、至少约0.09%或至少约0.1%)至最多约1%(如,最多约0.8%、最多约0.6%、最多约0.5%、最多约0.4%、最多约0.2%、最多约0.1%、最多约0.08%、最多约0.06%或最多约0.05%)。
在一或多个实施例中,本文所述的研磨组成物可实质上不含一或多种特定成分,如有机溶剂、pH调节剂、含氟化合物(如,氟化物化合物或氟化化合物(如,氟化聚合物/界面活性剂))、盐类(如,卤化物盐或金属盐)、聚合物(如,非离子、阳离子或阴离子聚合物)、季铵化合物(如,例如四烷基铵盐的盐类或例如氢氧化四烷铵的氢氧化物)、腐蚀抑制剂(如,唑类或非唑类腐蚀抑制剂)、碱基(如,碱金属氢氧化物)、含硅化合物如硅烷(如,烷氧基硅烷)、含氮化合物(如,胺基酸、胺、亚胺(如,脒,如1,8-二氮杂双环[5.4.0]-7-十一烯(DBU)及1,5-二氮杂双环[4.3.0]壬-5-烯(DBN))、酰胺或酰亚胺)、多元醇、无机酸(如,盐酸、硫酸、磷酸或硝酸)、界面活性剂(如,阳离子界面活性剂、阴离子界面活性剂、非聚合物界面活性剂或非离子界面活性剂)、塑化剂、氧化剂(如,H2O2及高碘酸)、腐蚀抑制剂(如,唑类或非唑类腐蚀抑制剂)、电解质(如,聚电解质)及/或某些磨料(如,氧化铈磨料、非离子磨料、表面改性磨料或负/正带电磨料)。可从该研磨组成物中排除的卤化物盐包括碱金属卤化物(如,卤化钠或卤化钾)或卤化铵(如,氯化铵),且可为氟化物、氯化物、溴化物或碘化物。如本文所用,研磨组成物中“实质上不含”的成分,意指不是有意添加到研磨组成物中的成分。在一些实施例中,本文所述的研磨组成物可具有最多约1000ppm(如,最多约500ppm、最多约250ppm、最多约100ppm、最多约50ppm、最多约10ppm或最多约1ppm)的一或多种上述该研磨组成物中实质上不含的成分。在一些实施例中,所述的研磨组成物可完全不含一种或多种上述成分。
在一或多个实施例中,本文所述的研磨组成物可具有从至少约2:1(如,至少约3:1、至少约4:1、至少约5:1、至少约10:1、至少约25:1、至少约50:1、至少约60:1、至少约75:1、至少约100:1、至少约150:1、至少约200:1、至少约250:1或至少约300:1)至最多约1000:1(如,最多约500:1、最多约300:1、最多约250:1、最多约200:1、最多约150:1或最多约100:1)的钼及/或其合金的去除速率对氮化物材料(如,氮化硅)的去除速率的比(即,去除速率比或选择性)。在一或多个实施例中,本文所述的研磨组成物可具有从至少约1:50(如,至少约1:45、至少约1:40、至少约1:35、至少约1:30、至少约1:25、至少约1:20、至少约1:15、至少约1:10、至少约1:8、至少约1:6、至少约1:5、至少约1:4、至少约1:2或至少约1:1)至最多约50:1(如,最多约45:1、最多约40:1、最多约35:1、最多约30:1、最多约25:1、最多约20:1、最多约15:1、最多约10:1、最多约8:1、最多约6:1、最多约5:1、最多约4:1、最多约2:1或最多约1:1)的钼及/或其合金的去除速率对氧化物材料(如,氧化硅如TEOS)的去除速率的比(即,去除速率比或选择性)。在一或多个实施例中,当在测量研磨镀膜晶圆(blanket wafers)或图案化晶圆(如,包括导电层、阻挡层及/或介电层的晶圆)的去除速率时,上述比可适用。
在一或多个实施例中,该钼及/或TEOS去除速率范围可从至少约 (如,至少约/>至少约/>至少约/>至少约/>至少约至少约/>至少约/>或至少约/>)至最多约(如,最多约/>最多约/> 最多约/>最多约最多约/>最多约/> 最多约/>最多约最多约/>或最多约/>)。在一或多个实施例中,该氮化物(如,氮化硅)去除速率可为最多约/>(如,最多约/>最多约/>最多约/> 最多约/>最多约/>最多约/>最多约最多约/>最多约/>最多约/>最多约/>或最多约/>或最多约/>或最多约/>或最多约/> 或最多约/>或基本上/>)。
在一或多个实施例中,本公开的特征在于一种研磨方法,其可包括将根据本公开的研磨组成物施加到基材(如,晶圆,例如镀膜晶圆(blanket wafer)或图案化晶圆)上;及使垫(如,研磨垫)与该基材的表面接触并相对于该基材移动该垫。在一或多个实施例中,该基材可包括下列中的至少一种:氧化硅(如,四乙基正硅酸盐(TEOS)、高密度电浆氧化物(HDP)、高深宽比制程氧化物(HARP)或硼磷硅酸盐玻璃(BPSG))、旋涂薄膜(如,基于无机粒子的薄膜或基于可交联碳聚合物的薄膜)、氮化硅、碳化硅、高K介电质(如,铪、铝或锆的金属氧化物)、硅(如,多晶硅、单晶硅或非晶硅)、碳、金属(如,钨、铜、钴、钌、钼、钛、钽或铝)或其合金、金属氮化物(如,氮化钛或氮化钽)及其的混合物或组合。在一或多个实施例中,该研磨方法可包括将本文所述的研磨组成物施加到在基材表面上含有钼及/或其合金的基材(如,晶圆)上。
在一或多个实施例中,使用本文所述的研磨组成物的方法,可进一步包括通过一或多个步骤从利用该研磨组成物处理的基材生产半导体组件。例如,可使用光蚀刻、离子植入、干/湿蚀刻、电浆蚀刻、沉积(如,PVD、CVD、ALD、ECD)、晶圆贴片(wafer mounting)、晶粒切割、封装及测试,从利用本文所述的研磨组成物处理的基材生产半导体组件。
下面的具体实施例应解释为仅仅是说明性的,且不以任何方式限制本公开的其余部分。无需进一步说明,相信本领域技术人员可以根据本文的描述充分利用本发明。
实施例
在这些实施例中,研磨是在300mm晶圆上,使用具有VP6000垫或H804垫的AMATReflexion LK CMP研磨机及175mL/min或300mL/min浆料流速进行。
实施例中使用的通用组成物如下表1所示。讨论各自的实施例时,将更详细地解释测试组成物的差异的具体细节。
表1
组份 | 占组成物的重量(%) |
pH调节剂(碱) | 0.005–1 |
第一有机酸 | 0.1–3 |
第一胺(胺基酸或包括6-24个碳烷基的烷基胺) | 0.001–1(若有使用) |
氮化硅去除速率降低剂 | 0.001–0.5(若有使用) |
磨料(二氧化硅) | 0.1–5 |
氧化剂 | 0.1–5 |
溶剂(DI水) | 75-99 |
pH | 2-6 |
实施例1
针对研磨组成物1-5,测量其等对TEOS、SiN及钼(Mo)的去除速率以及Mo静态蚀刻速率(Static Etch Rate,SER)。在45℃下将Mo试样悬浮在研磨组成物中1分钟,测量Mo的SER。通过研磨指定材料的镀膜晶圆(blanket wafer)测量去除速率。组成物1-4是相同的,除了(1)组成物1是对照组且不包括胺化合物,(2)组成物2-5分别包括1X、2X、3X、4X浓度的胺基酸(如本文所述的胺化合物)。组成物1-5全部都包括4X的本文所述的氮化物去除速率降低剂。测试结果总结在下表2中。
表2
*已清除表示RR/SER高到无法测量,因为晶圆上的Mo已被清除。
结果显示组成物2-5中的胺基酸(即,本文所述的胺化合物)有效地降低了钼静态蚀刻速率,随着数量增加显示出更多的降低。不含胺化合物的组成物1完全地清除了钼材料,表明该组成物的环境对钼太具腐蚀性。这些结果表明,胺基酸化合物可用作CMP过程中Mo的腐蚀抑制剂。
实施例2
如上所述,测量研磨组成物6-9对TEOS、SiN及Mo的去除速率以及Mo静态蚀刻速率(SER)。组成物6-9是相同的,除了其的pH值不同(即,分别为2.5、3、4及5)。组成物6-9包括1X的胺基酸作为本文所述的胺化合物及4X的氮化物去除速率降低剂。测试结果总结在下表3中。
表3
结果显示,较低的pH产生较高的Mo RR,然而SER从pH 2.5到pH 5相对稳定。对SiN的RR在pH 4以上时显著增加。
实施例3
测量研磨组成物10-13对TEOS、SiN及Mo的去除速率。组成物10-13是相同的,除了组成物10不包括任何氮化物去除速率降低剂,而组成物11-13分别包括1X、2X及4X的本文所述的氮化物去除速率降低剂。组成物10-13全部都包括1X的胺基酸作为本文所述的胺化合物。测试结果总结在下表4中。
表4
结果显示本文所述的氮化物去除速率降低剂显著地降低SiN RR。此外,该氮化物去除速率降低剂对TEOS或Mo去除速率没有明显影响。
实施例4
测量上述研磨组成物14-17对TEOS、SiN及Mo的去除速率以及Mo静态蚀刻速率(SER)。组成物14-17是相同的,除了其等分别包括0X、1X、2X及3X的包括6-24个碳烷基的烷基胺作为本文所述的胺化合物。组成物14-17全部都包括2X的本文所述的氮化物去除速率降低剂。结果总结在下表5中。
表5
*已清除表示RR/SER高到无法测量,因为晶圆上的Mo已被清除
结果显示,添加包含6-24个碳烷基的烷基胺作为胺化合物显著降低了Mo RR及SER,然而不会明显影响TEOS或SiN的去除速率。
实施例5
如上述针对研磨组成物18-22测量Mo SER。组成物18是不包括任何胺化合物的对照组。组成物19-22包括与组成物18相同的组分,除了组成物19-22分别包括相同重量%的6碳、8碳、12碳及16碳烷基胺化合物。所有组成物均包括相同量的所有其他组分,组成物18由于缺少烷基胺而包含稍多的水。结果总结在下表6中。
表6
结果显示,与对照组(组成物18)相比,添加烷基胺化合物在Mo SER方面产生显著的降低。此外,随着碳链长度从6个碳增加到16个碳时,Mo SER的降低增加。组成物21及组成物22的SER测量值指出,发生了非常少的Mo腐蚀,且为Mo提供了非常保护的环境,这应该提供了少量缺陷的受控的研磨速率。
实施例6
测量研磨组成物23-25对TEOS、SiN及Mo的去除速率。组成物23-25是相同的,除了其等分别包括C6、C12和C18氮化物去除速率降低剂。组成物23-25全部都包括相同的胺基酸作为本文所述的胺化合物。测试结果总结在下表7中。
表7
结果显示,随着氮化物去除速率降低剂中碳链长度的增加,氮化硅去除速率逐步降低。TEOS及Mo去除速率显示出类似的进展,但幅度较小。因此,以上结果表明氮化物去除速率降低剂中碳链越长,能够提供越有效的停止在氮化物上的能力。
实施例7
测量研磨组成物26-29的Mo SER及对TEOS、SiN及Mo的去除速率。组成物26-29是相同的,除了其等各自包括不同的胺基酸作为本文所述的胺化合物。组成物26-29全部都包括相同的氮化物去除速率降低剂。测试结果总结在下表8中。
表8
结果显示,与其他组成物相比,组成物28无法充分保护Mo(即,高SER及RR)。此外,组成物28还显示出显著地增加的SiN RR。以上结果表明,与仅含一个胺基的胺基酸(如,甘胺酸)相比,含至少二个胺基的胺基酸(如,组胺酸、精胺酸及离胺酸)对Mo表现出优异的腐蚀抑制作用。
虽然已经针对本文中阐述的实施例描述了本公开,但是应当理解,在不脱离发明申请专利范围所界定的本公开的精神和范围的情况下,其他修改和变化是可能的。
Claims (21)
1.一种研磨组成物,包括:
至少一种磨料;
至少一种有机酸或其盐;
至少一种胺化合物,所述至少一种胺化合物包括胺基酸和具有6-24个碳烷基链的烷基胺,或其混合物;
至少一种氮化物去除速率降低剂;及
水性溶剂;
其中所述研磨组成物具有约2至约9的pH。
2.如权利要求1所述的研磨组成物,其中,所述至少一种磨料是选自于由下列所组成的群组:氧化铝、二氧化硅、氧化钛、氧化铈、氧化锆;氧化铝、二氧化硅、氧化钛、氧化铈或氧化锆的共成形产物;涂布磨料、表面改性磨料,及其的混合物。
3.如权利要求1所述的研磨组成物,其中,所述至少一种磨料的量为该组成物的重量的约0.01%至约50%。
4.如权利要求1所述的研磨组成物,其中,所述至少一种有机酸是选自于由下列所组成的群组:葡萄糖酸、乳酸、柠檬酸、酒石酸、苹果酸、羟乙酸、丙二酸、甲酸、草酸、乙酸、丙酸、过乙酸、丁二酸、乳酸、胺基乙酸、苯氧乙酸、二羟乙甘胺酸、缩二羟乙酸、甘油酸,及其的混合物。
5.如权利要求1所述的研磨组成物,其中,所述至少一种有机酸的量为该组成物的重量的约0.001%至约10%。
6.如权利要求1所述的研磨组成物,其中,所述至少一种胺化合物是选自于由下列所组成的群组:三(羟甲基)甲基甘胺酸、丙胺酸、组胺酸、缬胺酸、苯丙胺酸、脯胺酸、麸酰胺酸、天冬胺酸、麸胺酸、精胺酸、离胺酸、酪胺酸、丝胺酸、白胺酸、异白胺酸、甘胺酸、色胺酸、天冬酰胺酸、半胱胺酸、甲硫胺酸、天冬胺酸盐、麸胺酸盐、苏胺酸、牛磺酸、己胺、辛胺、癸胺、十二烷胺、十四烷胺、十六烷胺、十八烷胺,及其的混合物。
7.如权利要求1所述的研磨组成物,其中,所述至少一种胺化合物的量为所述组成物的重量的约0.001%至约5%。
8.如权利要求1所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂包括:
疏水部分,包括C6至C40烃基;及
亲水部分,包括至少一个选自于由下列所组成的群组的基团:亚磺酸酯基团、硫酸酯基团、磺酸酯基团、羧酸酯基团、磷酸酯基团及膦酸酯基团;且
所述疏水部分与所述亲水部分之间相隔0至10个环氧烷基团。
9.如权利要求8所述的研磨组成物,其中,所述疏水部分包括C12至C32烃基。
10.如权利要求8所述的研磨组成物,其中,所述亲水部分包括磷酸酯基团或膦酸酯基团。
11.如权利要求8所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂的所述疏水部分与所述亲水部分之间相隔零个环氧烷基团。
12.如权利要求1所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂是选自于由下列所组成的群组:磷酸月桂酯、磷酸肉豆蔻酯、磷酸鲸蜡酯、磷酸硬脂酯、十八烷基膦酸、磷酸油酯、磷酸山嵛酯、硫酸十八烷基酯、磷酸三十二烷基酯、油醇聚醚-3-磷酸酯、油醇聚醚-10-磷酸酯、1,4-苯二膦酸、十二烷基膦酸、癸基膦酸、己基膦酸、辛基膦酸、苯基膦酸、1,8-辛基二膦酸、2,3,4,5,6-五氟苯甲基膦酸、十七氟癸基膦酸及12-五氟苯氧基十二烷基膦酸。
13.如权利要求1所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂包括阴离子聚合物。
14.如权利要求13所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂包括聚(4-苯乙烯磺酸)(PSSA)、聚丙烯酸(PAA)、聚(乙烯基膦酸)(PVPA)、聚(2-丙烯酰胺-2-甲基-1-丙磺酸)、聚(N-乙烯基乙酰胺)(PNVA)、阴离子聚(甲基丙烯酸甲酯)(PMMA)、阴离子聚丙烯酰胺(PAM)、聚天冬胺酸(PASA)、阴离子聚(丁二酸乙烯酯)(PES)、阴离子聚丁二酸丁二醇酯(PBS)、聚(乙烯醇)(PVA)、2-丙烯酸与2-甲基-2-((1-侧氧-2-丙烯基)胺基)-1-丙磺酸单钠盐及次亚磷酸钠的共聚物、2-丙烯酸与2-甲基-2-((1-侧氧-2-丙烯基)胺基)-1-丙磺酸单钠盐及亚硫酸氢钠钠盐的共聚物、2-丙烯酰胺-2-甲基-1-丙磺酸-丙烯酸共聚物、聚(4-苯乙烯磺酸-共-丙烯酸-共-乙烯基膦酸)三元共聚物,或其的混合物。
15.如权利要求1所述的研磨组成物,其中,所述至少一种氮化物去除速率降低剂占该组成物的重量的0.001%至10%。
16.如权利要求1所述的研磨组成物,其中,所述研磨组成物还包括至少一种唑类化合物。
17.如权利要求16所述的研磨组成物,其中,所述至少一种唑类化合物占所述组成物的重量的0.001%至5%。
18.如权利要求1所述的研磨组成物,其中,所述研磨组成物还包括:
有机溶剂,其量为该组成物的重量的0.001%至10%。
19.如权利要求18所述的研磨组成物,其中,所述有机溶剂是选自于由下列所组成的群组:乙醇、1-丙醇、2-丙醇、正丁醇、丙二醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇丙醚、乙二醇,及其任何组合。
20.一种方法,包括:
将如权利要求1-19中任一项所述的研磨组成物施加到基材上,所述基材表面上包括钼或其合金;及
使一垫与所述基材的表面接触并相对于所述基材移动所述垫。
21.如权利要求20所述的方法,其中,所述方法还包括:从所述基材形成半导体组件。
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