WO2007116979A1 - 封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品 - Google Patents

封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品 Download PDF

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Publication number
WO2007116979A1
WO2007116979A1 PCT/JP2007/057789 JP2007057789W WO2007116979A1 WO 2007116979 A1 WO2007116979 A1 WO 2007116979A1 JP 2007057789 W JP2007057789 W JP 2007057789W WO 2007116979 A1 WO2007116979 A1 WO 2007116979A1
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WO
WIPO (PCT)
Prior art keywords
resin composition
semiconductor chip
sealing filler
flip chip
chip mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/057789
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Osamu Matsuzaka
Rieko Hayashi
Takenori Ookubo
Tomohiro Hirata
Katsuhiko Yasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2008509895A priority Critical patent/JPWO2007116979A1/ja
Priority to TW096112933A priority patent/TW200804463A/zh
Publication of WO2007116979A1 publication Critical patent/WO2007116979A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • FIG. 1 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.
  • Examples of the (A) tetracarboxylic dianhydride component having an alkylene chain of 5 to 20 carbon atoms in the main chain include compounds represented by the following general formula (8).
  • the heat resistance of the package can be freely adjusted by changing the (A) tetracarboxylic dianhydride component and (B) diamine component used.
  • the elastic modulus of the bonding layer (including polyimide) obtained by re-solidifying the resin composition for sealing filler of the present invention after thermosetting or heat-melting is preferably 10 or more and 3500 MPa or less. More preferably, it is 10 or more and 3000 MPa or less. 50 or more and 2800 MPa or less is particularly preferable. 50 or more and 1500 MPa or less is more preferable. 100 or more lOOOMPa or less is most preferable. ! /
  • the thickness of the resin composition 6 for sealing filler to be applied is generally about 50 to 70 m depending on the wiring height and the like.
  • a general coating method includes a spin coating method or a printing method, and a resin composition for sealing filler.
  • the resin composition layer for sealing filler can be formed by drying and thermosetting. The drying and curing temperature depends on the solvent used, but it is common to gradually increase the temperature from about 100 ° C to about 300 ° C.
  • FIG. 5 to 7 are schematic cross-sectional views illustrating a process of a flip chip mounting method in which a resin composition for a sheet-like sealing filler is bonded onto a printed circuit board to bond the semiconductor chip and the printed circuit board. .
  • the precursor (polyamic acid) for the resin composition for sealing filler obtained in Example 1 and Example 2 was applied to a glass plate, and 100 ° CX for 1 hour, 200 ° CX30. Min., 250 ° CX for 1 hour, cured and peeled in warm water to obtain a film of a resin composition for sealing filler.
  • the temperature was raised to 60 ° C., and the mixture was stirred for 1 hour to obtain an N-methyl-2-pyrrolidone solution of polyamic acid.
  • the solid content in the obtained solution was 40% in mass, and the number average molecular weight of the precursor (polyamic acid) for the resin composition for sealing filler was 31000.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Sealing Material Composition (AREA)
  • Wire Bonding (AREA)
PCT/JP2007/057789 2006-04-12 2007-04-06 封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品 Ceased WO2007116979A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008509895A JPWO2007116979A1 (ja) 2006-04-12 2007-04-06 封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品
TW096112933A TW200804463A (en) 2006-04-12 2007-04-12 Resin composition for encapsulating filler, method of flip chip mounting with the same, and product of flip chip mounting

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006109693 2006-04-12
JP2006-109693 2006-04-12

Publications (1)

Publication Number Publication Date
WO2007116979A1 true WO2007116979A1 (ja) 2007-10-18

Family

ID=38581258

Family Applications (1)

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PCT/JP2007/057789 Ceased WO2007116979A1 (ja) 2006-04-12 2007-04-06 封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品

Country Status (4)

Country Link
JP (1) JPWO2007116979A1 (https=)
KR (1) KR101077020B1 (https=)
TW (1) TW200804463A (https=)
WO (1) WO2007116979A1 (https=)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008120764A1 (ja) * 2007-03-29 2008-10-09 Hitachi Chemical Company, Ltd. ポリアミック酸樹脂組成物、該樹脂組成物を用いた硬化膜および半導体装置
JP2009049115A (ja) * 2007-08-17 2009-03-05 Seiko Epson Corp 半導体装置及びその製造方法
JP2009263611A (ja) * 2008-04-01 2009-11-12 Hitachi Chem Co Ltd 半導体封止用フィルム状接着剤及び半導体装置の製造方法
JP2010006983A (ja) * 2008-06-27 2010-01-14 Hitachi Chem Co Ltd 封止充填剤及び半導体装置
JP2013112735A (ja) * 2011-11-28 2013-06-10 Ube Industries Ltd ポリイミド溶液組成物
JP2013155329A (ja) * 2012-01-31 2013-08-15 T & K Toka Co Ltd 溶剤可溶性ポリイミド樹脂及びその製造方法、並びに前記ポリイミド樹脂を含有するポリイミド組成物、ポリイミドフィルム、及びコーティング物品
JP2014051673A (ja) * 2013-11-01 2014-03-20 Nippon Steel & Sumikin Chemical Co Ltd ポリイミド樹脂組成物
JP2015526561A (ja) * 2012-08-24 2015-09-10 クローダ インターナショナル パブリック リミティド カンパニー ポリイミド組成物
JP2015180750A (ja) * 2015-07-08 2015-10-15 新日鉄住金化学株式会社 溶剤可溶性ポリイミド樹脂
JP2016020495A (ja) * 2015-07-08 2016-02-04 新日鉄住金化学株式会社 接着剤用ポリイミド樹脂
JP2017025332A (ja) * 2016-09-21 2017-02-02 新日鉄住金化学株式会社 溶剤可溶性ポリイミド樹脂
JP2017115154A (ja) * 2017-01-20 2017-06-29 新日鉄住金化学株式会社 ボンディングシート用原料ポリイミド樹脂及びボンディングシート
JP2017133001A (ja) * 2017-01-20 2017-08-03 新日鉄住金化学株式会社 接着剤用原料ポリイミド樹脂、カバーレイフィルム及びボンディングシート
JP2019189882A (ja) * 2019-08-08 2019-10-31 日鉄ケミカル＆マテリアル株式会社 溶剤可溶性ポリイミド樹脂の製造方法
US20240203899A1 (en) * 2022-12-15 2024-06-20 Qing Ding Precision Electronics (Huaian) Co.,Ltd System-in-package module and method for manufacturing the same

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JPH08283692A (ja) * 1995-04-17 1996-10-29 Kanegafuchi Chem Ind Co Ltd 電子モジュール
JPH10226778A (ja) * 1990-11-30 1998-08-25 Ube Ind Ltd 耐熱性樹脂接着剤シ−トおよび基板
JP2000026602A (ja) * 1998-07-07 2000-01-25 Nitto Denko Corp 熱融着性ポリイミド樹脂フィルムおよびこれを用いた半導体装置ならびに多層配線板
JP2001269797A (ja) * 2000-03-27 2001-10-02 Sumitomo Bakelite Co Ltd 半田接合用レジスト、半導体パッケージ及びその製造方法
JP2001279118A (ja) * 2000-03-30 2001-10-10 Tdk Corp 封止材料、はんだ付け用フラックス、はんだぺ一スト、電子部品装置、電子回路モジュール及び電子回路装置
JP2005175338A (ja) * 2003-12-15 2005-06-30 Sumitomo Bakelite Co Ltd 半導体用接着フィルムおよび半導体装置
JP2005175345A (ja) * 2003-12-15 2005-06-30 Tdk Corp 電子部品およびその製造方法
JP2007080885A (ja) * 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法

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JP2000252321A (ja) * 1999-03-03 2000-09-14 Hitachi Chem Co Ltd 電子部品装置の製造法
JP3915604B2 (ja) * 2002-06-10 2007-05-16 宇部興産株式会社 一液性エポキシ樹脂組成物および硬化物
JP2004292602A (ja) * 2003-03-26 2004-10-21 Nitto Denko Corp アンダーフィル用接着フィルム及びこれを用いた半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10226778A (ja) * 1990-11-30 1998-08-25 Ube Ind Ltd 耐熱性樹脂接着剤シ−トおよび基板
JPH08283692A (ja) * 1995-04-17 1996-10-29 Kanegafuchi Chem Ind Co Ltd 電子モジュール
JP2000026602A (ja) * 1998-07-07 2000-01-25 Nitto Denko Corp 熱融着性ポリイミド樹脂フィルムおよびこれを用いた半導体装置ならびに多層配線板
JP2001269797A (ja) * 2000-03-27 2001-10-02 Sumitomo Bakelite Co Ltd 半田接合用レジスト、半導体パッケージ及びその製造方法
JP2001279118A (ja) * 2000-03-30 2001-10-10 Tdk Corp 封止材料、はんだ付け用フラックス、はんだぺ一スト、電子部品装置、電子回路モジュール及び電子回路装置
JP2005175338A (ja) * 2003-12-15 2005-06-30 Sumitomo Bakelite Co Ltd 半導体用接着フィルムおよび半導体装置
JP2005175345A (ja) * 2003-12-15 2005-06-30 Tdk Corp 電子部品およびその製造方法
JP2007080885A (ja) * 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法

Cited By (17)

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