WO2007113037A1 - Couche conductrice transparente et texturee et son procede de realisation - Google Patents
Couche conductrice transparente et texturee et son procede de realisation Download PDFInfo
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- WO2007113037A1 WO2007113037A1 PCT/EP2007/051375 EP2007051375W WO2007113037A1 WO 2007113037 A1 WO2007113037 A1 WO 2007113037A1 EP 2007051375 W EP2007051375 W EP 2007051375W WO 2007113037 A1 WO2007113037 A1 WO 2007113037A1
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- Prior art keywords
- layer
- conductive layer
- substrate
- plasma
- hollows
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000005118 spray pyrolysis Methods 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 25
- 239000011787 zinc oxide Substances 0.000 description 12
- 238000000651 laser trapping Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 101150097381 Mtor gene Proteins 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001912 gas jet deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to the field of photoelectric devices. More particularly, it relates to a transparent conductive layer deposited on a substrate for a thin-film photoelectric device. Such a layer is more often called, by specialists, layer or electrode TCO (transparent conductive oxide English). The invention also relates to a method for producing this electrode.
- the present invention finds a particularly advantageous application for the production of photovoltaic cells intended for the production of electrical energy, but it also applies, more generally, to any structure in which a light radiation is converted into an electrical signal, such as photodetectors.
- thin film photoelectric devices typically having a thickness of less than 10 ⁇ m, consist of a transparent or non-transparent substrate, flexible or rigid, and deposited thereon, of a layer photoelectrically active formed of an inorganic semiconductor material or, more rarely, organic, and contacted on both sides by two electrodes of which at least one is transparent.
- the semiconductor layer generally consists of the stack of a p-type layer, an intrinsic-type active layer, and an n-type layer, together forming a p-i-n or n-i-p junction.
- the material used is mainly amorphous silicon or hydrogenated microcrystalline.
- an organic photoelectrically active layer it generally consists of the stack of a p-type layer and an n-type layer. The material used is then, for example, a polymer.
- the intrinsic active layer In order to limit the manufacturing costs of the photoelectric device, the intrinsic active layer must be relatively thin (between 100 nm and a few microns). However, such a layer leads to a low amount of light absorbed, particularly for indirect gap materials, such as microcrystalline silicon and, therefore, reduced efficiency. To compensate for this effect, it is therefore necessary to increase as much as possible the optical path of the light within the intrinsic layer. This is generally achieved by using a textured substrate - or layer - TCO, to diffuse or diffract incident light and thereby increase the path length of light in the active layer.
- Document DE 197 13 215 describes a solar cell whose substrate is covered with a TCO layer, advantageously zinc oxide (ZnO), formed by cathodic sputtering in an argon atmosphere from a ZnO target doped with aluminum.
- a TCO layer advantageously zinc oxide (ZnO)
- ZnO zinc oxide
- it is attacked either by a chemical process using an acid solution, or by an electrochemical process (anodic etching or reactive ion etching). The attack can be done during or after the deposition of the TCO layer.
- JP 62-297462 proposes to deposit a TCO layer by evaporation - and not by chemical means - and to interrupt this operation in order to soften the surface of the layer by an attack using an argon plasma.
- the optical trapping capacity of a layer is given by the "Haze factor" which takes the value 0% when no part of the incident light is diffused and the value 100% when all the light received is broadcast.
- the "Haze factor” of a solar cell must have a value as high as possible, typically at least 10%.
- the values provided in the aforementioned JP document are respectively 2 to 5% before the action of an argon plasma and 0.5% after treatment. These values clearly show that the argon plasma etching of an evaporated layer does not target the field of photovoltaic cells.
- EP 1 443 527 discloses a textured TCO layer having a surface morphology formed of an alternation of flat depressions which have many micro-asperities having a base of 0.1 to 0.3 ⁇ m, a height of 0.05 at 0.2 ⁇ m and a pitch (distance between the vertices) of 0.1 to 0.3 ⁇ m.
- Such micro-asperities are not conducive to good subsequent growth of the photoelectric layer.
- they because of their small size, they increase little light trapping in the interesting range (red and infra-red).
- the fact that the recesses are flat has the disadvantage of increasing the reflection of the light and thereby reduce the light injected into the photovoltaic device, thereby reducing the photo-generated current.
- One of the aims of the present invention is to provide a TCO layer having a good light-trapping capacity while ensuring satisfactory subsequent growth of the photoelectric layer. More specifically, the invention relates to a textured transparent conductive layer deposited on a substrate for a photoelectric device, and having a surface morphology formed of an alternation of bumps and valleys.
- this layer is characterized in that: its recesses have a rounded bottom whose radius of curvature is greater than about 25 nm, said recesses are practically smooth, that is to say that if they present micro-asperities, they have, on average, a height less than 5 nm, and its flanks form, with the plane of the substrate, an angle whose median of the absolute value is between 30 ° and 75 °.
- the invention also relates to a method of producing, on a substrate for a photoelectric device, a textured transparent conductive layer. This process comprises the following essential operations:
- FIG. 1 represents the profile (height as a function of position) of a chemically deposited layer of ZnO respectively before (a) and after (b) its argon plasma attack
- FIG. 2 is a graph showing the evolution of the roughness R rm s of this layer as a function of the duration t of its attack
- FIGS. 3 and 4 are plan views of this layer before and after its attack
- FIG. 5 is a graph showing the efficiency ⁇ , as a function of the plasma etching time, of a photoelectric device equipped with such a layer.
- a photoelectric device whether it be a solar cell or a photodetector, is characterized by its efficiency. conversion ⁇ and its optical trapping capacity, the first depending on the second, as long as the collection of the photo-generated current is good.
- the conversion efficiency ⁇ of such a device is given by the ratio between the electrical power supplied by the device and the received luminous power, the power supplied being equal to the product: Short-circuit current (l sc ) x Circuit voltage open (V oc ) x FiII factor (FF).
- the method according to the invention comprises two essential operations, performed on a substrate for a photoelectric device, which may be plastic, metal, glass or any other insulating or conductive, flexible or rigid material.
- the first operation is the deposition, on the substrate, of a transparent conductive oxide layer TCO, consisting in particular of SnO 2 , ZnO, ITO, In 2 ⁇ 3, Cd 2 SnO 3 ... or a combination of these oxides , typically having a thickness of the order of 0.05 to 10 ⁇ m.
- the deposition is carried out chemically, this expression encompassing processes that are in themselves physical but in which a chemical reaction takes place.
- the deposit is made according to one of the techniques listed below in a non-exhaustive manner, with references from the literature that concern them:
- LPCVD Low pressure CVD
- APCVD atmospheric pressure
- Photo-induced organometallic CVD photo-MOCVD: "ZnO thin film for solar cells prepared by photo-induced metalorganic chemical vapor deposition", Masahiro Yoshino, Wilson Wenas W, Akira Yamada, Makoto Konagai and Kioshi Takahashi, Japanese Journal of Applied Physics, Vol 32 (1993), p.726-730, Part I, No. 2.
- - Chemical Bath Solgel CBD: "Novel Temperature Solution Deposition of Perpendicularly Oriented Rods of ZnO: Substrate Effects and Evidence of the importance of counter-ions in the control of crystallite growth ", David S.
- PECVD Plasma CVD
- RF magnetron sputtering "The fiber texture growth and the roughness surface of ZnO thin films", J. A. Anna Selvan, H.
- the valleys of the V are favorable places, during the growth of the semiconductor layers, the appearance of cracks or cracks may cause carrier recombination and other electrical problems (short circuit, .. ..) that affect the conversion efficiency of the device.
- the roughness of the chemically deposited TCO layer can be characterized by the standard deviation of the heights of the points constituting its "rms-roughness" surface whose value, shown in the graph of FIG. 2, is 202 nm.
- the method according to the present invention corrects this weakness by means of a second operation which consists of an attack of the TCO layer using a rare gas plasma, such as helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) and radon (Rn).
- a rare gas plasma such as helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) and radon (Rn).
- a simple atmospheric attack provides the desired effect.
- the attack can be done using at least one other gas such as hydrogen (H 2 ), oxygen (O 2 ), nitrogen (N 2 ), chlorine (Cl 2 ), methane (CH 4 ), water (H 2 O) and carbon dioxide (CO 2 ).
- the attack is performed by an argon plasma.
- the TCO layer according to the invention advantageously still has the following main geometrical characteristics:
- the vertical gap between its bumps and hollows is between 100 and 800 nm;
- the distance between the peaks of the bumps is between 100 and 1500 nm.
- FIG. 5 shows the improvement, as a function of the duration t of the plasma etching, of the conversion efficiency ⁇ of a hydrogenated microcrystalline silicon photoelectric device provided with a substrate coated with a layer of TCO deposited chemically.
- the microcrystalline silicon layers are deposited by the PECVD method (it is to be noted that the value of ⁇ before the attack is only 3.3% at baseline but it rises to 9.2% after 40 minutes to remain constant then an optimal duration of plasma treatment under the aforementioned operating conditions is therefore about 40 minutes.
- the standard deviation of the roughness does not down to a value below 180 nm, still quite satisfactory for optimal trapping of light in the cell.
- the table below shows, by way of example, the evolution of the various characteristics (already mentioned) of a hydrogenated microcrystalline silicon photoelectric device provided with a chemically deposited TCO layer before and after its plasma attack. .
- the density of photocurrent lj nv provided under reverse voltage which is an indicator of the optical trapping capacity of the device is substantially unaffected by plasma etching.
- the open circuit voltage V oc and the FiII factor FF, both of which contribute to the conversion efficiency of the device, are very greatly improved since, after 60 minutes of attack, they jump 21, 1% and 66%. , 4% respectively. - Finally, the conversion efficiency ⁇ , jumped by 238%.
- the production yield of the layer obtained by the process according to the invention is greater than 95% whereas it is 60%, on average, when uses other methods. This is due to the fact that the plasma treatment effectively eliminates all the dust and particles present in the working environment, which could short-circuit the cells.
- any thin film photoelectric device can benefit from the substrate according to the invention. It can therefore be, for example, one of the following devices: • hydrogenated amorphous silicon solar cell,
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Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT07704549T ATE463842T1 (de) | 2006-03-30 | 2007-02-13 | Texturierte transparente leitfähige schicht und herstellungsverfahren dafür |
JP2009501977A JP2009531842A (ja) | 2006-03-30 | 2007-02-13 | 起伏のある透明導電層及びその製造方法 |
KR1020087025467A KR101504553B1 (ko) | 2006-03-30 | 2007-02-13 | 텍스쳐링된 투명 전도층 및 그 제조방법 |
US12/294,936 US8723020B2 (en) | 2006-03-30 | 2007-02-13 | Textured transparent conductive layer and method of producing it |
CN2007800112081A CN101410980B (zh) | 2006-03-30 | 2007-02-13 | 有织纹的透明导电层及其制造方法 |
EP07704549A EP2005473B1 (fr) | 2006-03-30 | 2007-02-13 | Couche conductrice transparente et texturee et son procede de realisation |
AU2007233965A AU2007233965B2 (en) | 2006-03-30 | 2007-02-13 | Textured transparent conductive layer and method of producing it |
DE602007005787T DE602007005787D1 (de) | 2006-03-30 | 2007-02-13 | Rstellungsverfahren dafür |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06112013A EP1840966A1 (fr) | 2006-03-30 | 2006-03-30 | Couche conductrice transparente et texturée et son procédé de réalisation |
EP06112013.5 | 2006-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007113037A1 true WO2007113037A1 (fr) | 2007-10-11 |
Family
ID=36545206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2007/051375 WO2007113037A1 (fr) | 2006-03-30 | 2007-02-13 | Couche conductrice transparente et texturee et son procede de realisation |
Country Status (10)
Country | Link |
---|---|
US (1) | US8723020B2 (fr) |
EP (2) | EP1840966A1 (fr) |
JP (1) | JP2009531842A (fr) |
KR (1) | KR101504553B1 (fr) |
CN (1) | CN101410980B (fr) |
AT (1) | ATE463842T1 (fr) |
AU (1) | AU2007233965B2 (fr) |
DE (1) | DE602007005787D1 (fr) |
ES (1) | ES2343378T3 (fr) |
WO (1) | WO2007113037A1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007288043A (ja) * | 2006-04-19 | 2007-11-01 | Kaneka Corp | 光電変換装置用透明導電膜とその製造方法 |
EP2190024A1 (fr) | 2008-11-19 | 2010-05-26 | Université de Neuchâtel | Dispositif photoélectrique a jonctions multiples et son procédé de realisation |
US20130213464A1 (en) * | 2012-02-21 | 2013-08-22 | Samsung Corning Precision Materials Co., Ltd. | Conductive film substrate, photovoltaic cell having the same, and method of manufacturing the same |
US9337367B2 (en) * | 2010-07-29 | 2016-05-10 | Ecole Polytechnique Federale De Lausanne | Multiple-junction photoelectric device and its production process |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120003859A (ko) * | 2009-03-17 | 2012-01-11 | 아이엠이씨 | 플라즈마 텍스처링 방법 |
US20130000721A1 (en) * | 2010-03-15 | 2013-01-03 | Yoshiyuki Nasuno | Substrate for photoelectric conversion device, photoelectric conversion device using the substrate, and method for producing the substrate and device |
US9276142B2 (en) | 2010-12-17 | 2016-03-01 | First Solar, Inc. | Methods for forming a transparent oxide layer for a photovoltaic device |
US8476105B2 (en) | 2010-12-22 | 2013-07-02 | General Electric Company | Method of making a transparent conductive oxide layer and a photovoltaic device |
EP2518789B1 (fr) * | 2011-04-18 | 2016-04-13 | Corning Precision Materials Co., Ltd. | Procédé de fabrication d'un substrat d'extraction de lumière pour un dispositif électroluminescent |
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JP2007288043A (ja) * | 2006-04-19 | 2007-11-01 | Kaneka Corp | 光電変換装置用透明導電膜とその製造方法 |
EP2190024A1 (fr) | 2008-11-19 | 2010-05-26 | Université de Neuchâtel | Dispositif photoélectrique a jonctions multiples et son procédé de realisation |
US8368122B2 (en) | 2008-11-19 | 2013-02-05 | Universite De Neuchatel | Multiple-junction photoelectric device |
US9337367B2 (en) * | 2010-07-29 | 2016-05-10 | Ecole Polytechnique Federale De Lausanne | Multiple-junction photoelectric device and its production process |
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US9297069B2 (en) * | 2012-02-21 | 2016-03-29 | Corning Precision Materials Co., Ltd. | Conductive film substrate, photovoltaic cell having the same, and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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US20100126575A1 (en) | 2010-05-27 |
AU2007233965A1 (en) | 2007-10-11 |
CN101410980B (zh) | 2012-11-07 |
EP1840966A1 (fr) | 2007-10-03 |
DE602007005787D1 (de) | 2010-05-20 |
KR20090015898A (ko) | 2009-02-12 |
CN101410980A (zh) | 2009-04-15 |
ATE463842T1 (de) | 2010-04-15 |
JP2009531842A (ja) | 2009-09-03 |
US8723020B2 (en) | 2014-05-13 |
KR101504553B1 (ko) | 2015-03-23 |
ES2343378T3 (es) | 2010-07-29 |
AU2007233965B2 (en) | 2012-03-29 |
EP2005473A1 (fr) | 2008-12-24 |
EP2005473B1 (fr) | 2010-04-07 |
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