WO2007101138A9 - Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques - Google Patents

Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques Download PDF

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Publication number
WO2007101138A9
WO2007101138A9 PCT/US2007/062766 US2007062766W WO2007101138A9 WO 2007101138 A9 WO2007101138 A9 WO 2007101138A9 US 2007062766 W US2007062766 W US 2007062766W WO 2007101138 A9 WO2007101138 A9 WO 2007101138A9
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WIPO (PCT)
Prior art keywords
particles
planar
inter
metallic
nanoflakes
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Application number
PCT/US2007/062766
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English (en)
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WO2007101138A2 (fr
WO2007101138A3 (fr
Inventor
Duren Jeroen K J Van
Craig R Leidholm
Matthew R Robinson
Original Assignee
Duren Jeroen K J Van
Craig R Leidholm
Matthew R Robinson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority to EP07757448A priority Critical patent/EP1997150A2/fr
Priority to JP2008556573A priority patent/JP2009528682A/ja
Priority to CN200780014617.7A priority patent/CN101443919B/zh
Application filed by Duren Jeroen K J Van, Craig R Leidholm, Matthew R Robinson filed Critical Duren Jeroen K J Van
Publication of WO2007101138A2 publication Critical patent/WO2007101138A2/fr
Publication of WO2007101138A3 publication Critical patent/WO2007101138A3/fr
Publication of WO2007101138A9 publication Critical patent/WO2007101138A9/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/541—CuInSe2 material PV cells
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

L'invention concerne des procédés et dispositifs pour transformer des matériaux précurseurs plans ou non plans dans un véhicule approprié dans les conditions voulues pour créer des dispersions de particules planes avec des rapports stoehiométriques d'éléments égaux à celui de la charge de départ ou des matériaux précurseurs, même après sédimentation de forces sélectives. En particulier, les particules planes se dispersent plus facilement, forment des revêtements beaucoup plus denses (ou forment des revêtements avec une zone de contact interparticulaire accrue), et se recuisent en films fondus, denses à une température plus basse et/ou en un temps plus court que leurs homologues réalisés à partir de nanoparticules sphériques. Ces particules planes peuvent être des nanoflocons d'un rapport d'allongement élevé. Les films denses résultants formés à partir de nanoflocons sont particulièrement utiles dans la formation de dispositifs photovoltaïques. Selon un mode de réalisation, au moins un ensemble des particules d'encre peut être des particules de flocons intermétalliques (microflocon ou nanoflocon) contenant au moins une phase d'alliage intermétallique de groupe IB-IIIA.
PCT/US2007/062766 2006-02-23 2007-02-23 Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques WO2007101138A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07757448A EP1997150A2 (fr) 2006-02-23 2007-02-23 Impression a haut rendement de couche precurseur semi-conductrice a partir de particules de nanoflocons intermetalliques
CN200780014617.7A CN101443919B (zh) 2006-02-23 2007-02-23 形成吸收层的方法、用于形成吸收层的前体材料以及太阳能电池
JP2008556573A JP2009528682A (ja) 2006-02-23 2007-02-23 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US11/361,497 2006-02-23
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US11/361,103 2006-02-23
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,522 2006-02-23
US11/361,521 2006-02-23
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/361,433 2006-02-23
US11/361,515 2006-02-23
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,438 2006-03-30
US11/394,849 2006-03-30
US11/395,668 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material

Publications (3)

Publication Number Publication Date
WO2007101138A2 WO2007101138A2 (fr) 2007-09-07
WO2007101138A3 WO2007101138A3 (fr) 2008-10-23
WO2007101138A9 true WO2007101138A9 (fr) 2008-12-31

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PCT/US2007/062766 WO2007101138A2 (fr) 2006-02-23 2007-02-23 Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques

Country Status (4)

Country Link
EP (1) EP1997150A2 (fr)
JP (2) JP2009528682A (fr)
CN (2) CN103824896A (fr)
WO (1) WO2007101138A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354294B2 (en) * 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
US20100197068A1 (en) * 2008-10-30 2010-08-05 Hak Fei Poon Hybrid Transparent Conductive Electrode
JP5383162B2 (ja) * 2008-11-26 2014-01-08 京セラ株式会社 薄膜太陽電池の製法
JP5137794B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 薄膜太陽電池の製法
JP5317648B2 (ja) * 2008-11-26 2013-10-16 京セラ株式会社 薄膜太陽電池の製法
JP2010129648A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法
BRPI1006965A2 (pt) * 2009-01-21 2016-04-12 Purdue Research Foundation selenização de camada precursora contendo nanopartículas de cuins2
JP2010225985A (ja) * 2009-03-25 2010-10-07 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
JP2013501381A (ja) * 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド 制御された化学量論を有する光起電性アブソーバーのための方法
KR101610382B1 (ko) * 2009-10-30 2016-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
JP2013539912A (ja) * 2010-09-15 2013-10-28 プリカーサー エナジェティクス， インコーポレイテッド 光起電のための堆積過程およびデバイス
TWI538235B (zh) * 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
EP3001438B1 (fr) 2012-07-20 2022-03-16 Asahi Kasei Kabushiki Kaisha Cellule solaire et procede de sa fabrication
KR101723062B1 (ko) * 2014-11-18 2017-04-04 주식회사 엘지화학 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법
CN109830549B (zh) * 2018-12-13 2021-01-05 广东工业大学 一种硫化铟/石墨烯复合薄膜及其制备方法和应用
CN113324970B (zh) * 2021-04-25 2023-04-21 中国科学技术大学 一种结构可调的高热点三维网筛纳米拉曼基底及其制备、应用
CN117866484B (zh) * 2024-03-12 2024-06-04 成都先进金属材料产业技术研究院股份有限公司 一种液态金属油墨及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743686A3 (fr) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Précurseur pour des couches minces semi-conductrices et méthode de fabrication de couches minces semi-conductrices
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
JP2001044464A (ja) * 1999-07-28 2001-02-16 Asahi Chem Ind Co Ltd Ｉｂ―ＩＩＩｂ―ＶＩｂ２族化合物半導体層の形成方法、薄膜太陽電池の製造方法
JP4341124B2 (ja) * 1999-11-25 2009-10-07 ソニー株式会社 半導体装置の製造方法
US7091136B2 (en) * 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US20030041893A1 (en) * 2001-08-31 2003-03-06 Matsushita Electric Industrial Co. Ltd. Solar cell, method for manufacturing the same, and apparatus for manufacturing the same
JP2004087535A (ja) * 2002-08-22 2004-03-18 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
KR20040089569A (ko) * 2003-04-11 2004-10-21 소니 가부시끼 가이샤 광전변환소자 제조방법, 광전변환소자, 전자장치제조방법, 전자장치, 금속막 형성방법 및 층구조, 및반도체 미립자층 및 층구조
CN1295765C (zh) * 2004-03-04 2007-01-17 上海交通大学 光伏半导体薄膜渡液及光伏半导体薄膜的制备方法

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EP1997150A2 (fr) 2008-12-03
JP2013033987A (ja) 2013-02-14
CN103824896A (zh) 2014-05-28
JP2009528682A (ja) 2009-08-06
WO2007101138A3 (fr) 2008-10-23
CN101443919A (zh) 2009-05-27
CN101443919B (zh) 2014-03-05

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