WO2007101138A3 - Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques - Google Patents
Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques Download PDFInfo
- Publication number
- WO2007101138A3 WO2007101138A3 PCT/US2007/062766 US2007062766W WO2007101138A3 WO 2007101138 A3 WO2007101138 A3 WO 2007101138A3 US 2007062766 W US2007062766 W US 2007062766W WO 2007101138 A3 WO2007101138 A3 WO 2007101138A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- particles
- planar
- inter
- metallic
- nanoflakes
- Prior art date
Links
- 239000002245 particle Substances 0.000 title abstract 6
- 239000002060 nanoflake Substances 0.000 title abstract 4
- 239000002243 precursor Substances 0.000 title abstract 3
- 229910000765 intermetallic Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000905 alloy phase Inorganic materials 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000001995 intermetallic alloy Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
L'invention concerne des procédés et dispositifs pour transformer des matériaux précurseurs plans ou non plans dans un véhicule approprié dans les conditions voulues pour créer des dispersions de particules planes avec des rapports stœchiométriques d'éléments égaux à celui de la charge de départ ou des matériaux précurseurs, même après sédimentation de forces sélectives. En particulier, les particules planes se dispersent plus facilement, forment des revêtements beaucoup plus denses (ou forment des revêtements avec une zone de contact interparticulaire accrue), et se recuisent en films fondus, denses à une température plus basse et/ou en un temps plus court que leurs homologues réalisés à partir de nanoparticules sphériques. Ces particules planes peuvent être des nanoflocons d'un rapport d'allongement élevé. Les films denses résultants formés à partir de nanoflocons sont particulièrement utiles dans la formation de dispositifs photovoltaïques. Selon un mode de réalisation, au moins un ensemble des particules d'encre peut être des particules de flocons intermétalliques (microflocon ou nanoflocon) contenant au moins une phase d'alliage intermétallique de groupe IB-IIIA.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07757448A EP1997150A2 (fr) | 2006-02-23 | 2007-02-23 | Impression a haut rendement de couche precurseur semi-conductrice a partir de particules de nanoflocons intermetalliques |
CN200780014617.7A CN101443919B (zh) | 2006-02-23 | 2007-02-23 | 形成吸收层的方法、用于形成吸收层的前体材料以及太阳能电池 |
JP2008556573A JP2009528682A (ja) | 2006-02-23 | 2007-02-23 | 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 |
Applications Claiming Priority (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/361,497 | 2006-02-23 | ||
US11/361,103 US20070169809A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
US11/361,103 | 2006-02-23 | ||
US11/361,522 US20070166453A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of chalcogen layer |
US11/361,522 | 2006-02-23 | ||
US11/361,521 | 2006-02-23 | ||
US11/361,497 US20070163638A1 (en) | 2004-02-19 | 2006-02-23 | Photovoltaic devices printed from nanostructured particles |
US11/361,521 US20070163383A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of nanostructured semiconductor precursor layer |
US11/361,433 | 2006-02-23 | ||
US11/361,515 | 2006-02-23 | ||
US11/361,515 US20070163640A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides |
US11/361,433 US7700464B2 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US11/395,438 US20070163643A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
US11/394,849 US20070163641A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
US11/395,438 | 2006-03-30 | ||
US11/394,849 | 2006-03-30 | ||
US11/395,668 | 2006-03-30 | ||
US11/395,668 US8309163B2 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2007101138A2 WO2007101138A2 (fr) | 2007-09-07 |
WO2007101138A3 true WO2007101138A3 (fr) | 2008-10-23 |
WO2007101138A9 WO2007101138A9 (fr) | 2008-12-31 |
Family
ID=38459767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/062766 WO2007101138A2 (fr) | 2006-02-23 | 2007-02-23 | Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1997150A2 (fr) |
JP (2) | JP2009528682A (fr) |
CN (2) | CN103824896A (fr) |
WO (1) | WO2007101138A2 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8354294B2 (en) * | 2006-01-24 | 2013-01-15 | De Rochemont L Pierre | Liquid chemical deposition apparatus and process and products therefrom |
US20100197068A1 (en) * | 2008-10-30 | 2010-08-05 | Hak Fei Poon | Hybrid Transparent Conductive Electrode |
JP5383162B2 (ja) * | 2008-11-26 | 2014-01-08 | 京セラ株式会社 | 薄膜太陽電池の製法 |
JP5137794B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 薄膜太陽電池の製法 |
JP5317648B2 (ja) * | 2008-11-26 | 2013-10-16 | 京セラ株式会社 | 薄膜太陽電池の製法 |
JP2010129648A (ja) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | 薄膜太陽電池の製法 |
BRPI1006965A2 (pt) * | 2009-01-21 | 2016-04-12 | Purdue Research Foundation | selenização de camada precursora contendo nanopartículas de cuins2 |
JP2010225985A (ja) * | 2009-03-25 | 2010-10-07 | Fujifilm Corp | 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池 |
JP2013501381A (ja) * | 2009-08-04 | 2013-01-10 | プリカーサー エナジェティクス, インコーポレイテッド | 制御された化学量論を有する光起電性アブソーバーのための方法 |
KR101610382B1 (ko) * | 2009-10-30 | 2016-04-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
FR2964044B1 (fr) * | 2010-08-26 | 2012-09-14 | Commissariat Energie Atomique | Emulsion de metal liquide |
JP2013539912A (ja) * | 2010-09-15 | 2013-10-28 | プリカーサー エナジェティクス, インコーポレイテッド | 光起電のための堆積過程およびデバイス |
TWI538235B (zh) * | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
EP3001438B1 (fr) | 2012-07-20 | 2022-03-16 | Asahi Kasei Kabushiki Kaisha | Cellule solaire et procede de sa fabrication |
KR101723062B1 (ko) * | 2014-11-18 | 2017-04-04 | 주식회사 엘지화학 | 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법 |
CN109830549B (zh) * | 2018-12-13 | 2021-01-05 | 广东工业大学 | 一种硫化铟/石墨烯复合薄膜及其制备方法和应用 |
CN113324970B (zh) * | 2021-04-25 | 2023-04-21 | 中国科学技术大学 | 一种结构可调的高热点三维网筛纳米拉曼基底及其制备、应用 |
CN117866484B (zh) * | 2024-03-12 | 2024-06-04 | 成都先进金属材料产业技术研究院股份有限公司 | 一种液态金属油墨及其制备方法 |
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US5728231A (en) * | 1995-05-15 | 1998-03-17 | Matsushita Electric Industrial Co., Ltd. | Precursor for semiconductor thin films and method for producing semiconductor thin films |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
JP2001044464A (ja) * | 1999-07-28 | 2001-02-16 | Asahi Chem Ind Co Ltd | Ib―IIIb―VIb2族化合物半導体層の形成方法、薄膜太陽電池の製造方法 |
US20030041893A1 (en) * | 2001-08-31 | 2003-03-06 | Matsushita Electric Industrial Co. Ltd. | Solar cell, method for manufacturing the same, and apparatus for manufacturing the same |
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
JP2004087535A (ja) * | 2002-08-22 | 2004-03-18 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
KR20040089569A (ko) * | 2003-04-11 | 2004-10-21 | 소니 가부시끼 가이샤 | 광전변환소자 제조방법, 광전변환소자, 전자장치제조방법, 전자장치, 금속막 형성방법 및 층구조, 및반도체 미립자층 및 층구조 |
CN1295765C (zh) * | 2004-03-04 | 2007-01-17 | 上海交通大学 | 光伏半导体薄膜渡液及光伏半导体薄膜的制备方法 |
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2007
- 2007-02-23 EP EP07757448A patent/EP1997150A2/fr not_active Withdrawn
- 2007-02-23 CN CN201410025475.6A patent/CN103824896A/zh active Pending
- 2007-02-23 CN CN200780014617.7A patent/CN101443919B/zh not_active Expired - Fee Related
- 2007-02-23 WO PCT/US2007/062766 patent/WO2007101138A2/fr active Application Filing
- 2007-02-23 JP JP2008556573A patent/JP2009528682A/ja active Pending
-
2012
- 2012-10-03 JP JP2012220990A patent/JP2013033987A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5728231A (en) * | 1995-05-15 | 1998-03-17 | Matsushita Electric Industrial Co., Ltd. | Precursor for semiconductor thin films and method for producing semiconductor thin films |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
JP2001044464A (ja) * | 1999-07-28 | 2001-02-16 | Asahi Chem Ind Co Ltd | Ib―IIIb―VIb2族化合物半導体層の形成方法、薄膜太陽電池の製造方法 |
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US20030041893A1 (en) * | 2001-08-31 | 2003-03-06 | Matsushita Electric Industrial Co. Ltd. | Solar cell, method for manufacturing the same, and apparatus for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2007101138A2 (fr) | 2007-09-07 |
EP1997150A2 (fr) | 2008-12-03 |
JP2013033987A (ja) | 2013-02-14 |
CN103824896A (zh) | 2014-05-28 |
JP2009528682A (ja) | 2009-08-06 |
WO2007101138A9 (fr) | 2008-12-31 |
CN101443919A (zh) | 2009-05-27 |
CN101443919B (zh) | 2014-03-05 |
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