WO2007097396A1 - 高融点金属からなる焼結体スパッタリングターゲット - Google Patents
高融点金属からなる焼結体スパッタリングターゲット Download PDFInfo
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- WO2007097396A1 WO2007097396A1 PCT/JP2007/053284 JP2007053284W WO2007097396A1 WO 2007097396 A1 WO2007097396 A1 WO 2007097396A1 JP 2007053284 W JP2007053284 W JP 2007053284W WO 2007097396 A1 WO2007097396 A1 WO 2007097396A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0466—Alloys based on noble metals
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Definitions
- the present invention relates to a sintered sputtering target including two or more refractory metals, and in particular, improves the target structure to prevent metal particles other than the main components forming a matrix from falling off and to perform arcing during sputtering.
- the present invention relates to a sintered sputtering target having a high melting point metal force that can improve the quality of film formation by reducing the generation of particles.
- Ruthenium (Ru), rhodium (Rh) or iridium (Ir), which are refractory metals, are excellent in thermal stability, and are excellent in low resistance and nori characteristics. In particular, it is attracting attention as a gate electrode material and various diffusion barrier materials.
- Ruthenium (Ru), rhodium (Rh), iridium (Ir), etc. may be used as a single thin film or a target material for forming the thin film, respectively. There is a problem with evil.
- a well-known sputtering method As a means for forming a thin film, a well-known sputtering method is generally used. As the sputtering method, a high frequency (RF) sputtering apparatus is usually used. In sputtering, it is indispensable to manufacture an alloy target having the above composition. In order to improve the quality of film formation, it is very important to improve the quality of the target.
- a target is manufactured by adding a refractory metal to ruthenium (Ru), rhodium (Rh), or iridium (Ir), which are the refractory metals, it may be possible to manufacture using a melting one plastic processing method. Since ruthenium, rhodium and iridium are fragile materials with high melting points, the melting equipment becomes very expensive, and plastic processing also requires special techniques, resulting in high manufacturing costs.
- the content of the alloying element as a secondary component is small in ruthenium (Ru), rhodium (Rh) or iridium (Ir), which are high melting point metals, there is no significant problem.
- the metal as a secondary component is present in the form of dots (islands) in the microstructure (matrix component) in which the metal is the main component. This is because the particles fall off and cause particles.
- gas components or other impurities present in the target are likely to gather at the interface of the structure, and the presence of such impurities also causes arcing during spattering.
- the problem is that the strength is weakened and the quality of the film is lowered.
- Molybdenum tungsten target consisting mainly of molybdenum and tungsten, sintered with molybdenum and tungsten particles with a diffusion bonding distance of 1.0 ⁇ m or less, and with a bending strength of 750 MPa or more (see Patent Document 1).
- a structure consisting of a titanium-tungsten alloy phase, tungsten phase, and titanium phase that has been sintered under pressure at 1500-1700 ° C and mixed with a mixture of tungsten powder and titanium powder and has an area ratio of 20% or more in the target cross section.
- a method for producing a tungsten-titanium target material for preventing particle generation to obtain a sintered body having an average crystal grain size of 50 m or less see Patent Document 2.
- Patent Document 1 Japanese Patent Laid-Open No. 11-36067
- Patent Document 2 JP-A-5-156384
- Patent Document 3 Japanese Patent Laid-Open No. 2000-355761
- the present invention relates to a sintered sputtering target containing two or more refractory metals, and in particular, drops of metal particles other than the main components that improve the target structure and form a matrix.
- a sintered sputtering target containing two or more refractory metals, and in particular, drops of metal particles other than the main components that improve the target structure and form a matrix.
- impurities reduce impurities such as gas components, improve density, reduce the generation of arcing particles at the time of notching, improve film formation quality, and improve target processability
- the present invention provides at least one main component selected from Ru, Rh or Ir and one or more powers selected from W, Ta or Hf.
- at least one main component selected from Ru, Rh or Ir and one or more powers selected from W, Ta or Hf.
- the secondary component of the above it is possible to prevent the particles from falling off, reduce the amount of impurities such as gas components, and improve the density. It was found that an alloy target for sputtering mainly composed of ruthenium, rhodium and iridium can be obtained.
- the present invention is based on this finding,
- the sintered sputtering target having a high melting point metal force of the present invention also has at least one main component force selected from Ru, Rh or Ir. These refractory metals may be single, composite, or misaligned, but they should be 50 at% or more in total as the main component.
- refractory metals have excellent thermal stability, low resistance, and excellent barrier properties. Therefore, it is useful as a film forming material for semiconductor elements, particularly as a gate electrode material and various diffusion barrier materials. It is desirable that the metal structure of Ru, Rh or Ir force as the matrix has a substantially uniform average particle diameter of about 10 to 30 / ⁇ ⁇ . This is not the main (essential) constituent requirement of the present invention, but is more preferable because it has the effect of further reducing the generation of arcing particles during sputtering and improves the uniformity of the sputtered film structure.
- W, Ta or Hf which is a minor component, is added at 5 at% or more and less than 50 at%.
- the amount added can be arbitrarily selected according to the purpose of use.
- These subcomponents have effects such as improving the plating wettability of a thin film made of a refractory metal which is the main component of Ru, Rh or Ir.
- the reason why the amount of the sub-component is 5 at% or more is that if it is less than this amount, there is no effect of the additive.
- the maximum addition amount of subcomponents should be less than 50at% as a subcomponent.
- the problem is the presence of these subcomponents in the target.
- the metal phase (including the alloy phase or the compound phase) as these accessory components exists as a granular material in the metal structure as the matrix.
- a granular material means a single, combined or combined shape of a piece, a sphere, a string, or other shape, and it is understood that the shape is particularly limited to 3 ⁇ 4V. It should be.
- the granular materials as these subcomponents are composed of a granular subcomponent metal phase having an average particle diameter of 100 m to 500 m, or an alloy phase or a compound phase of the main component and the subcomponent. These are scattered in the form of particles in the metal structure consisting of the main components.
- the use of the expression “spotted” here means that they are almost independent and exist on average in the matrix.
- These refractory metals which are subcomponents, receive heat during sintering and form an alloy phase or a compound phase with the refractory metal, which is a main component in the surroundings.
- these alloy phases or compound phases act to strengthen the bond between the particles as subcomponents and the refractory metal of the surrounding matrix. Therefore, the presence of this alloy phase or compound phase is useful for preventing exfoliation of secondary component particles.
- a main component and an auxiliary component alloy phase or compound phase having an average width of 5 m to 50 m around the granular subcomponent metal phase More preferably, a particulate subcomponent metal phase is provided with a main component having a mean width of 5 m to 100 m and a subcomponent alloy phase or compound phase, more preferably a granular subcomponent metal phase. It is desirable to have an alloy phase or a compound phase of a main component and a subcomponent with an average width of up to 200 ⁇ m around. On the other hand, the alloy phase or the compound phase is inherently hard, and if it is present in a large amount, the workability may decrease. Therefore, the upper limit of the force due to the joining of refractory metal yarns should be about 200 m or less. It can be said that it is desirable.
- the present invention provides a sintered sputtering target having the above-mentioned refractory metal strength, wherein the oxygen content, which is an impurity of the gas component, is 300 wtppm or less and the carbon content is 100 wtppm or less.
- a sintered compact sputtering target having the above-mentioned refractory metal strength is provided in which the total amount of impurities other than gas components is 100 wtppm or less.
- the reduction of gas components and impurities are not the main (essential) requirements of the present invention, they have the effect of further reducing the generation of arcing particles during sputtering and improve the uniformity of the notch film structure. . Therefore, it is a preferable mode to reduce the gas component and other impurities at the same time.
- the sintered sputtering target having a high melting point metal force according to the present invention has a relative density force of 3 ⁇ 48% or more and no voids of 100 ⁇ m or more.
- the presence of voids is directly related to the density.
- the density is improved to prevent cracking of the target and to further reduce particles. . This is also the main (essential) of the present invention.
- the variation of the alloy composition per target area lcm 3 is ⁇ 10% or less. Since it is a sintered body made of two or more refractory metals according to the present invention, it is difficult to obtain a target material in a completely solid solution state. It is desirable that the variation of the alloy composition is ⁇ 10% or less. This is also not the main (essential) component requirement of the present invention!
- the sintered sputtering target having a high melting point metal force of the present invention improves the target structure to prevent the metal particles other than the main components forming the matrix from falling off, and to prevent impurities such as gas components. This has the excellent effect that the quality of the film can be improved by improving the density, reducing the generation of arcing particles during sputtering, and improving the workability of the target.
- the refractory alloy sputtering target having a ruthenium (Ru) alloy, rhodium (Rh) alloy, and iridium (Ir) alloy power of the present invention includes one or more of ruthenium powder, rhodium powder, or iridium powder, and tungsten (W ), Tantalum (Ta) or hafnium (Hf), which is a mixture of one or more subcomponents with a total amount of metal powder of less than 50 at%, and sintering this mixed powder to obtain a high melting point metal force. It is a body target.
- Films obtained by sputtering these targets are useful as film forming materials for semiconductor elements, particularly as gate electrode materials and various diffusion barrier materials.
- the present invention can be applied to materials other than these uses, not limited to these uses, and is included in the present invention.
- the grain size of the sintered powder is reflected in the sintered structure, it is necessary to adjust the grain size at the raw material powder stage. If excessively fine, it absorbs oxygen and lowers oxygen From this point of view, it can be said that it is desirable to avoid using excessively fine powder.
- the size of the raw material powder affects the refinement of the secondary component phase in the sintered structure, that is, if a large amount of fine particles are present on the target, it causes a partition.
- the size of the sintering raw material that affects the structure of the target after sintering must be limited to a certain level.
- ruthenium powder for example, commercially available 4N grade (99.99% purity) ruthenium powder, rhodium powder or iridium powder (respectively low oxygen products) ) Is introduced into an ultra-high vacuum chamber and the ruthenium powder is heated using high power infrared lamp heating or microwave heating to remove oxygen.
- the temperature of the powder body is about 1100-1300 ° C. This is because oxygen dissociation does not occur sufficiently if the temperature is not higher than 1100 ° C.
- This heating is because the ruthenium powder, rhodium powder or iridium powder is bonded and the sintering property is not lowered, and lamp heating or microwave heating is performed so that the powder body can be cooled to room temperature quickly. It is to make it. After confirming that sufficient oxygen has been released with an oxygen monitor connected to the chamber, stop heating and cool rapidly.
- argon gas is introduced, the ruthenium powder, rhodium powder or iridium powder is sealed in a container, and 4N grade (99.99 wt% purity) tungsten powder, tantalum powder or hafnium powder is mixed.
- This tungsten powder, tantalum powder or hafnium powder is obtained by pulverizing the EB ingot of each metal by repeated hydrogenation and dehydrogenation.
- This mixed powder is again deoxidized at 1100 ° C., hot-pressed in vacuum at a temperature of 1300-1800 ° C., and further subjected to hot isostatic pressing to produce a sintered body. This is further processed into a target shape (machining, etc.).
- the ruthenium alloy, rhodium alloy or iridium alloy sintered sputtering target thus obtained has a target purity excluding gas components of 99.99 wt% or more.
- Granular secondary component metal with an average particle size of 100 ⁇ m to 500 ⁇ m in the metal structure
- the interstitial phase or the alloy phase or the compound phase of the main component and subcomponent can be scattered by selecting the particle size of the powder and adjusting and selecting the sintering conditions (temperature, pressure).
- the gas component can be achieved by adopting a process that can be removed under conditions where oxygen and carbon are not mixed.
- ruthenium powder low oxygen product
- 4N grade ruthenium powder (low oxygen product) was introduced into an ultra-high vacuum chamber, and oxygen was removed from the ruthenium powder by heating with a high-power infrared lamp.
- the raw material Ru powder has an oxygen concentration of 1200 ppm and a particle size of 1.5 ⁇ m.
- the temperature of the powder body was about 1200 ° C. After confirming that oxygen was released sufficiently with an oxygen monitor connected to the chamber, the heating was stopped, rapidly cooled, and cooled to room temperature.
- EB electron beam melting ingot repeatedly by hydrogenation and dehydrogenation
- Tungsten powder, tantalum powder, and hafnium powder were mixed with ruthenium powder with the addition amount changed to 5 at%, 15 at%, and 30 at%, respectively.
- the oxygen concentration of the tungsten raw material powder is 20 ppm
- the oxygen concentration of the tantalum raw material powder is 80 ppm
- the oxygen concentration of the hafnium raw material powder is 130 ppm.
- FIG. 1 is a view showing the structure of a refractory metal target of Example 12 shown below.
- the target density was in the range of 98 wt% or more, and the oxygen amount was in the range of 40 to 220 wtppm.
- Example 1 1 (indicated in the table as “Actual 1 1”, the same shall apply hereinafter), the W metal phase composed of granular subcomponents is 147 m in size, and around the subcomponent metal phase. An alloy phase with an average thickness of 60 ⁇ m (alloy phase of main component and subcomponent) or compound phase is formed! I was ashamed.
- Example 1-2 the W metal phase, which also has a granular subcomponent force, has a size of 133 m, and an alloy phase (main component) having an average thickness of 52 ⁇ m is around the subcomponent metal phase. And an alloy phase of a secondary component) or a compound phase was formed.
- the W metal phase which also has a granular subcomponent force, has a size of 139 m, and around the subcomponent metal phase is an alloy phase (main component and subcomponents) with an average thickness of 56 m.
- An alloy phase) or a compound phase is formed.
- Example 2-1 the Ta metal phase also having a granular subcomponent force has a size of 124 m, and the subcomponent Ta metal phase is surrounded by an alloy phase (main component 48 m in average thickness). Alloy phase) and subcomponents) or compound phases were formed. As a result, processability is excellent, the occurrence of further particle generation of arcing Nag is 4 X 10- 3 Ke / cm 2, obtained excellent Ru-5at% Ta capacitor one target.
- Example 2-2 the Ta metal phase, which also has a granular subcomponent force, has a size of 131 ⁇ m, and around the subcomponent Ta metal phase, an alloy phase having an average thickness of 39 m (the main component and the subcomponent force). An alloy phase with the component) or a compound phase was formed. As a result, workability is good, occurrence of further particle generation of arcing Nag is 9 X 10- 3 Ke / cm 2, obtained excellent Ru- 15 at% Ta capacitor one target.
- the Ta metal phase which also has a granular subcomponent force, has a size of 118 m, and the subcomponent Ta metal phase has an alloy phase (main component and subcomponents) with an average thickness of 30 m. Alloy phase) or a compound phase.
- workability was good, arcing was not generated, and particles were generated at 4 ⁇ 10 3 / cm 2 , and a good Ru-30at% Ta target was obtained.
- the Hf metal phase which also has a granular subcomponent force, has a size of 185 m, and the subcomponent Hf metal phase is surrounded by an alloy phase (main component 9 m in average thickness). Alloy phase) and subcomponents) or compound phases were formed. As a result, the processability was good, arcing was not generated, and particles were generated at 10 ⁇ 10 3 / cm 2 , and an excellent Ru-5at% Hf target was obtained.
- the Hf metal phase which is the granular subcomponent force, has a size of 192 m, and the subcomponent Hf metal phase is surrounded by an alloy phase (main component and subcomponent) having an average thickness of 10 m. Alloy phase) or a compound phase.
- alloy phase main component and subcomponent
- Alloy phase main component and subcomponent
- a compound phase main component and subcomponent
- workability is good
- occurrence of further particle generation of arcing Nag is 13 X 10- 3 Ke / cm 2, obtained excellent Ru- 15 at% Hf data one target.
- the Hf metal phase which is a granular subcomponent force, has a size of 210 m, and around the subcomponent Hf metal phase, an alloy phase with an average thickness of 11 m (main component and subcomponent) Alloy phase) or a compound phase.
- the processability is good and the arcing Generation generation of further particles Nag is 14 X 10- 3 Ke / cm 2, good Ru-30at% Hf data one target was obtained.
- a mixed powder was produced in the same manner as in Example 1-3. However, tungsten powder, tantalum As the powder and hafnium powder, powder classified to 200 mesh or less was used. This was hot-pressed at 1600 ° C. in a vacuum and further subjected to hot isostatic pressing to produce a sintered body. The results are shown in Table 1.
- tungsten shown in Comparative Example 1, tantalum shown in Comparative Example 2, and hafnium loadings shown in Comparative Example 3 were changed to 5 at%, 15 at%, and 30 at%, respectively. is there .
- the density of the sintered body was in the range of 98.3 to 99.6%, and both exceeded 98%.
- the oxygen concentration was in the range of 350 to 1960 wtppm, and the oxygen content was high. It was.
- subcomponent metal phase The average particle size of the granular subcomponent metal phase or the main component and subcomponent alloy phase or compound phase (hereinafter referred to as “subcomponent metal phase”), which is particularly important, satisfies all the conditions of the present invention. I'm sorry.
- the target density was in the range of 98 wt% or more
- the oxygen content was in the range of 350 to 1960 wtppm
- the oxygen content was high.
- Comparative Example 1 1 In Comparative Example 1 1 (indicated as “Ratio 1 1” in the table, the same shall apply hereinafter), the W metal phase composed of granular subcomponents is 90 m in size and does not satisfy the conditions of the present invention. I helped. In addition, an alloy phase (alloy phase of main component and subcomponent) or a compound phase having an average thickness of 35 ⁇ m was slightly formed around the subcomponent W metal phase. As a result, workability is good, there was no occurrence of ⁇ over King, generation of particles is 21 X 10- 3 Ke / cm 2, obtained poor Ru-5at% W target in comparison to the Examples It was.
- the W metal phase which is the granular secondary component force
- an alloy phase (alloy phase of main component and subcomponent) or compound phase with an average thickness of 28 ⁇ m is formed around the subcomponent W metal phase! .
- Workability may Nag arcing occurrence of impotence ivy force more particles is 32 X 10- 3 Ke / cm 2, poor Ru-15at% W target was obtained.
- the W metal phase which is the granular subcomponent force
- the force application property in which an alloy phase (alloy phase of main component and subcomponent) or compound phase having an average thickness of 24 m was formed around the subcomponent W metal phase was poor.
- the Ta metal phase which is a granular subcomponent force, was 53 ⁇ m in size, and did not satisfy the conditions of the present invention.
- An alloy phase with an average thickness of 15 m (alloy phase of main component and accessory component) or a compound phase was formed around the minor component Ta metal phase, but the workability was not good and arcing There occurs, the generation of further particles are 49 X 10- 3 Ke / cm 2, poor Ru-5at% Ta target was obtained.
- the Ta metal phase which is a granular secondary component force, was 64 m in size, and did not satisfy the conditions of the present invention.
- An alloy phase (alloy phase of main component and accessory component) or compound phase with an average thickness of 18 / zm or compound phase was formed around the accessory component Ta metal phase, but workability was poor and arcing occurred. There are further generation of particles is 58 X 10- 3 Ke / cm 2, poor Ru-15at% Ta target was obtained.
- the Ta metal phase which is a granular subcomponent force, was 33 m in size, and did not satisfy the conditions of the present invention.
- An alloy layer with an average thickness (alloy phase of main component and subcomponent) or compound phase was formed around the minor component Ta metal phase, but the workability was poor and arcing occurred. Furthermore particle generation significantly more and 89 X 10- 3 Ke / cm 2, poor Ru-30at% Ta target was obtained.
- the Hf metal phase which is the granular secondary component force, was 26 m in size, and did not satisfy the conditions of the present invention.
- An alloy phase (alloy phase of main component and accessory component) or compound phase with an average thickness of 1 / zm or compound phase was formed around the accessory component Hf metal phase, but the workability was poor and arcing occurred. is there further particle generation becomes very large as 52 X 10- 3 Ke / cm 2, defective Ru-5at% Hf target were obtained.
- the Hf metal phase which is the granular secondary component force, is 16 m in size. He did not meet the requirements of the claimed invention. An alloy phase (alloy phase of main component and accessory component) or compound phase with an average thickness of 1 / zm or compound phase was formed around the accessory component Hf metal phase, but the workability was poor and arcing occurred. There are further generation of particles becomes large as 69 X 10- 3 Ke / cm 2, defective Ru-15at% Hf target were obtained.
- the Hf metal phase which is the granular subcomponent force, was 11 m in size, and did not satisfy the conditions of the present invention.
- An alloy phase (alloy phase of main component and accessory component) or compound phase with an average thickness of 1 / zm or compound phase was formed around the accessory component Hf metal phase, but the workability was poor and arcing occurred. There are, the generation of further particles abnormally large as 84 X 10- 3 Ke / cm 2, defective Ru-30at% Hf target were obtained.
- Table 1 shows the results of Comparative Example 1 and Comparative Example 3.
- Example 4 Example 4, Example 5, Example 6)
- Rh low oxygen product
- tungsten powder, tantalum powder, and hafnium powder were mixed with ruthenium powder while changing the amount of added calories to 5 at%, 15 at%, and 30 at%, respectively.
- the oxygen concentration of tandasten raw material powder is 20 ppm
- the oxygen concentration of tantalum raw material powder is 80 ppm
- the oxygen concentration of hafnium raw material powder is 130 ppm.
- the tungsten shown in Example 4 As shown in Table 2, the tungsten shown in Example 4, the tantalum shown in Example 5, and the hafnium loading amount shown in Example 6 were changed to 5 at%, 15 at%, and 30 at%, respectively. Is. As a result, the density of the sintered body was in the range of 98.0 to 99.8%, and both exceeded 98%.
- the oxygen concentration was in the range of 40 to 260 wtppm, and low oxygen was achieved.
- the average crystal grain size of the rhodium matrix structure, which is the main component was in the range of 13 to 34 ⁇ m.
- the average particle size of the granular subcomponent metal phase or the alloy phase or compound phase of the main component and subcomponent (hereinafter referred to as “subcomponent metal phase”), which is particularly important, satisfied the conditions of the present invention. .
- the metal phase having the granular subcomponent force was evenly scattered.
- the target purity is in the range of 98 wt% or more (excluding gas components and other impurities), and the oxygen content is in the range of 40 to 260 wtppm. To the end.
- Example 4 1 (denoted as “Act 4 1” in the table, the same shall apply hereinafter), the W metal phase composed of granular subcomponents is 138 m in size, and is around the subcomponent metal phase.
- Example 4-2 the W metal phase, which also has a granular subcomponent force, has a size of 130 m, and around the subcomponent metal phase is an alloy phase (with the main component and 26 m in average thickness). Alloy phase with subcomponents) or compound phase was formed. As a result, processability is excellent, the occurrence of further particles occurrence of arcing Nag is 7 X 10- 3 Ke / cm 2, obtained excellent Rh- 15 at% W target.
- the W metal phase which also has a granular subcomponent force, is 130 m in size
- An alloy phase (alloy phase of main component and subcomponent) or a compound phase having an average thickness of 25 ⁇ m was formed around the subcomponent metal phase.
- the processability was excellent, arcing was not generated, and particles were generated at 12 ⁇ 10 3 / cm 2 , and a good Rh-30at% W target was obtained.
- Example 5-1 the Ta metal phase that also has a granular subcomponent force has a size of 136 m, and an alloy phase (main component and main component) having an average thickness of 30 m is surrounded by the subcomponent metal phase. Alloy phase with subcomponents) or compound phase was formed. As a result, processability is excellent, the occurrence of further particles occurrence of arcing Nag is 3 X 10- 3 Ke / cm 2, obtained excellent Rh-5at% Ta Target Tsu bets.
- Example 5-2 the Ta metal phase, which also has a granular subcomponent force, has a size of 118 m, and an alloy phase (main component and subcomponent) having an average thickness of 22 ⁇ m is surrounded around the subcomponent metal phase. Alloy phase) or a compound phase.
- workability is good, occurrence of further particles occurrence of arcing Nag is 4 X 10- 3 Ke / cm 2, obtained excellent Rh- 15 at% Ta target.
- the Ta metal phase which also has a granular subcomponent force, is 169 m in size, and around the subcomponent metal phase is an alloy phase with an average thickness of 30 m (main component and subcomponent). Alloy phase) or a compound phase.
- workability is good, occurrence of further particles occurrence of arcing Nag is 9 X 10- 3 Ke / cm 2, better Rh-30at% Ta target was obtained.
- Example 6-1 the Hf metal phase, which is a granular subcomponent force, has a size of 209 m, and around the subcomponent metal phase, an alloy phase having an average thickness of 10 m (with the main component and Alloy phase with subcomponents) or compound phase was formed.
- workability is good, occurrence of further particles occurrence of arcing Nag is 6 X 10- 3 Ke / cm 2, obtained excellent Rh-5at% Hf Target Tsu bets.
- the Hf metal phase which is a granular subcomponent force, has a size of 162 m, and around the subcomponent metal phase, an alloy phase (main component and subcomponent Alloy phase) or a compound phase.
- an alloy phase main component and subcomponent Alloy phase
- a compound phase main component and subcomponent Alloy phase
- the Hf metal phase which is a granular subcomponent force, has a size of 208 m, and around the subcomponent metal phase, an alloy phase with an average thickness of 9 m (main component and subcomponent) Alloy phase) or a compound phase.
- workability is good, occurrence of further particles occurrence of arcing Nag is 14 X 10- 3 Ke / cm 2, better Rh-30at% Hf target were obtained.
- a mixed powder was produced in the same manner as in Examples 4-6. However, tungsten powder, tantalum powder, and hafnium powder were classified to 200 mesh or less. This was hot-pressed at 1600 ° C. in a vacuum and further subjected to hot isostatic pressing to produce a sintered body. The results are shown in Table 2.
- the oxygen concentration was in the range of 500 to 2220 wtppm, and the oxygen content was high.
- the average crystal grain size of the rhodium matrix structure, which is the main component, was in the range of 6 to 28 ⁇ m.
- the particularly important granular subcomponent power metal phase has a size of 21 ⁇ m to 93 ⁇ m, both of which are outside the scope of the present invention. Details will be described below.
- Comparative Examples 4 to 6 all had a target density in the range of 98 wt% or more, except that the oxygen content was in the range of 500 to 2220 wtppm, and the oxygen content was high.
- the W metal phase which is a granular subcomponent force, had a size of 64 m, and did not satisfy the conditions of the present invention. There is an average thickness of 12 around the minor component W metal phase. m alloy phase (alloy phase of main component and subcomponent) or compound phase was formed. As a result, Caro workability is good, there is the occurrence of arcing, the occurrence of further particles are 54 X 10- 3 Ke / cm 2, poor Ru-15at% W target was obtained.
- the W metal phase which is the granular subcomponent force, was 64 m in size, and did not satisfy the conditions of the invention of this application.
- the Ta metal phase which is the granular secondary component force, was 93 ⁇ m in size, and did not satisfy the conditions of the present invention.
- the Ta metal phase which is a granular subcomponent force, was 78 m in size, and did not satisfy the conditions of the present invention.
- there is arcing further generation of particles is 78 XI 0- 3 Ke / cm 2, poor Rh-15at% Ta target was obtained.
- the Ta metal phase which is a granular subcomponent force, was 85 m in size, and did not satisfy the conditions of the present invention.
- the Hf metal phase which is a granular subcomponent force, was 44 m in size, and did not satisfy the conditions of the invention of the present application.
- the Hf metal phase which is a granular subcomponent force, was 21 ⁇ m in size, and did not satisfy the conditions of the invention of this application.
- the Hf metal phase which is the granular secondary component force, was 30 m in size, and did not satisfy the conditions of the invention of this application.
- a commercially available 3N grade iridium powder (low oxygen product: Ir) was introduced into an ultra-high vacuum chamber, and oxygen was removed from the Ir powder by heating with a high-power infrared lamp.
- the oxygen concentration of the raw material Ir powder is 1800 ppm and the particle size is 1.8 ⁇ m.
- the temperature of the powder body was about 1200 ° C.
- the oxygen monitor connected to the chamber confirmed that sufficient oxygen had been released, stopped the force heating, cooled rapidly, and cooled to room temperature.
- tungsten powder, tantalum powder, and hafnium powder were mixed with ruthenium powder while changing the amount of added calories to 5 at%, 15 at%, and 30 at%, respectively.
- the oxygen concentration of tandasten raw material powder is 20 ppm
- the oxygen concentration of tantalum raw material powder is 80 ppm
- the oxygen concentration of hafnium raw material powder is 130 ppm.
- Example 7 As shown in Table 3, tungsten shown in Example 7, tantalum shown in Example 8, and hafnium loadings shown in Example 9 were changed to 5 at%, 15 at%, and 30 at%, respectively. is there .
- the density of the sintered body was in the range of 98.7 to 99.9%, and all exceeded 98%.
- the oxygen concentration was in the range of 30 to 220 wtppm, and low oxygen was achieved.
- the average crystal grain size of the iridium matrix structure as the main component was in the range of ll to 30 / zm.
- the metal phase which also has an important granular subcomponent force has a size of 122 ⁇ m to 212 ⁇ m, which satisfies the conditions of the present invention.
- the target purity is 98 wt% or more (excluding gas components and other impurities), and the oxygen content is 30 to 220 wtppm. To the end.
- Example 7-1 In the table, described as “Actual 7-1”, the same shall apply hereinafter, the W metal phase composed of the granular subcomponent is 128 m in size, and the subcomponent metal phase An alloy phase (alloy phase of main component and subcomponent) or a compound phase having an average thickness of 25 ⁇ m was formed around.
- Example 7-2 the W metal phase that also has a granular subcomponent force has a size of 122 m, and an alloy phase (main component) having an average thickness of 22 ⁇ m is around the subcomponent metal phase.
- An alloy phase of bismuth and subcomponents) or a compound phase was formed.
- processability is excellent, the occurrence of further particles occurrence of arcing Nag is 12 X 10- 3 Ke / cm 2, obtained excellent Ir- 15 at% W target.
- Example 7-3 the W metal phase, which also has a granular subcomponent force, has a size of 161 ⁇ m, and an alloy phase (the main component and subcomponents) having an average thickness of 32 ⁇ m is formed around the subcomponent metal phase. Alloy phase with ingredients ) Or a compound phase was formed.
- excellent in workability generation of further particles occurrence of arcing Nag is 9 X 10- 3 Ke / cm 2, better Ir-30at% W Target Tsu bets were obtained.
- Example 8-1 the Ta metal phase, which is a granular subcomponent force, has a size of 149 m, and an alloy phase (main component) having an average thickness of 15 ⁇ m is around the subcomponent metal phase.
- An alloy phase of bismuth and subcomponents) or a compound phase was formed.
- processability is excellent, the occurrence of further particles occurrence of arcing Nag is 7 X 10- 3 Ke / cm 2, obtained excellent Ir-5at% Ta Target Tsu bets.
- the Ta metal phase which also has a granular subcomponent force, has a size of 170 m, and around the subcomponent metal phase, an alloy phase (main component and subcomponent Alloy phase) or a compound phase.
- an alloy phase main component and subcomponent Alloy phase
- a compound phase As a result, workability is good, occurrence of further particles occurrence of arcing Nag is 5 X 10- 3 Ke / cm 2, obtained excellent Ir-15at% Ta target.
- the Ta metal phase which also has a granular subcomponent force, has a size of 179 m, and around the subcomponent metal phase is an alloy phase (main component and subcomponent Alloy phase) or a compound phase.
- the subcomponent metal phase is an alloy phase (main component and subcomponent Alloy phase) or a compound phase.
- Example 9-1 the Hf metal phase that also has a granular subcomponent force has a size of 196 m, and an alloy phase (main component and main component) having an average thickness of 7 m is surrounded around the subcomponent metal phase. Alloy phase with subcomponents) or compound phase was formed. As a result, workability is good, occurrence of further particles occurrence of arcing Nag is 5 X 10- 3 Ke / cm 2, obtained excellent Ir-5at% Hf Target Tsu bets.
- the Hf metal phase which is a granular subcomponent force, has a size of 182 m.
- the Hf metal phase which is a granular subcomponent force, has a size of 212 ⁇ m, and an alloy phase (main component and subcomponent) having an average thickness of 11 m is formed around the subcomponent metal phase. Alloy phase) or a compound phase.
- workability is good, occurrence of further particles occurrence of arcing Nag is 8 X 10- 3 Ke / cm 2, good Ir- 30 at% Hf Target Tsu bets were obtained.
- a mixed powder was produced in the same manner as in Examples 7-9. However, tungsten powder, tantalum powder, and hafnium powder were classified to 200 mesh or less. This was hot-pressed at 1600 ° C. in a vacuum and further subjected to hot isostatic pressing to produce a sintered body. The results are shown in Table 3.
- tungsten shown in Comparative Example 7, tantalum shown in Comparative Example 8, and hafnium loadings shown in Comparative Example 9 were changed to 5 at%, 15 at%, and 30 at%, respectively. is there .
- the density of the sintered body was in the range of 95.8 to 99.9%, and in the case of the Hf additive, there was also a material in which the decrease in density was significantly cut by 98%.
- the oxygen concentration was in the range of 350-2320 wtppm, and the oxygen content was high.
- the average crystal grain size of the iridium matrix structure as the main component was in the range of 13 to 28 ⁇ m. Particularly important is the granular subcomponent power, which is 27 ⁇ ! The size was ⁇ 63 m, and none of them was within the scope of the present invention. Details will be described below.
- the target purity is in the range of 98 wt% or more (excluding gas components and other impurities), but the oxygen amount is 350 to 2320 wtppm. It was in the range, and the oxygen content was strong.
- the W metal phase composed of the granular subcomponent is 52 m in size, and the subcomponent metal phase An alloy phase (alloy phase of main component and subcomponent) or a compound phase having an average thickness m was formed around.
- the occurrence of adverse device arcing workability occurrence of impotence ivy force the particles is 39 X 10- 3 Ke / cm 2, poor Ir-5at% W target in comparison to the embodiment was obtained.
- the W metal phase which is a granular subcomponent force, has a size of 62 ⁇ m, and an alloy phase (mainly 9 ⁇ m thick) around the subcomponent metal phase. Alloy phase of component and accessory component) or A compound phase was formed. As a result, workability is rather good, but the occurrence of arcing was no generation of particles is 28 X 10- 3 Ke / cm 2, poor Ir- 15 at% W Target Tsu bets were obtained.
- the W metal phase which is a granular subcomponent force, has a size of 63 m, and an alloy phase (main component and subcomponent) having an average thickness of 9 ⁇ m is surrounded by the subcomponent metal phase. Alloy phase) or a compound phase.
- workability is rather good, but also there is arcing further generation of particles increased with 85 X 10- 3 Ke / cm 2, poor Ir-30at% W target was obtained.
- the Ta metal phase which is a granular subcomponent force, has a size of 41 ⁇ m, and an alloy phase (main component) having an average thickness of 4 m is formed around the subcomponent metal phase. Alloy phase) and a minor component) or a compound phase was formed. As a result, workability is a little good tool occurrence of arcing free bur generation of particles is 39 X 10- 3 Ke / cm 2, poor Ir-5at% Ta target was obtained.
- the Ta metal phase which is a granular subcomponent force, has a size of 42 m, and around the subcomponent metal phase, an alloy phase (main component and subcomponent Alloy phase) or a compound phase.
- an alloy phase main component and subcomponent Alloy phase
- a compound phase As a result, although there is no occurrence of adverse device arcing workability, generation of particles is 35 X 10- 3 Ke / cm 2, poor Ir-15at% Ta target was obtained.
- the Ta metal phase which is a granular subcomponent force, has a size of 28 m, and an alloy phase (main component and subcomponent) having an average thickness of 2 ⁇ m is surrounded by the subcomponent metal phase. Alloy phase) or a compound phase.
- processability is poor, there is arcing, further particle generation 76 X 10- 3 Ke / cm 2 remarkably tag poor Ir-30at% Ta target was obtained.
- the Hf metal phase which is a granular subcomponent force, has a size of 36 m, and an alloy phase (average component and main component) having an average thickness of 1 ⁇ m is formed around the subcomponent metal phase.
- An alloy phase with subcomponents) or a compound phase was formed.
- processability is poor, there is arcing, further particle generation becomes very large as 52 X 10- 3 Ke / cm 2, defective Ir-5at% Hf data one target was obtained.
- the Hf metal phase which is a granular subcomponent force, has a size of 27 m, and an alloy phase (main component and subcomponent) having an average thickness of 1 ⁇ m is surrounded around the subcomponent metal phase. Alloy phase) or a compound phase.
- processability is poor, there is arcing further generation of particles becomes large as 77 X 10- 3 Ke / cm 2, defective Ir-15at% Hf target were obtained.
- the Hf metal phase which is a granular subcomponent force, has a size of 28 m, and an alloy phase having an average thickness of 1 ⁇ m (a main component and subcomponents) around the subcomponent metal phase. Alloy phase) or a compound phase.
- processability is poor, there is the occurrence of arcing, the occurrence of further particles becomes abnormally large as 103 X 103 Ke / cm 2, defective Ir- 30 at% Hf target were obtained.
- Table 1 shows the results of Comparative Example 7 and Comparative Example 9.
- Example 10 when the W amount is 15 at% and the average particle size of the subcomponent phase is 128 to 135 m under the conditions of Example 1, as Example 11, the Ta amount of Example 2 is 15 at%.
- the average particle size of the subcomponent phase is 131 to 140 / ⁇ ⁇
- the amount of Hf of Example 3 is 15 at%
- the average particle size of the subcomponent phase is 191 to 202 / ⁇ ⁇
- Table 4 shows the results for the processability, final king, and number of particles when the average particle size, relative density, oxygen content, and carbon content of the matrix change.
- Example 10 Example 11, and Example 12 shown in Table 4, no arcing occurred in any case.
- Example 10 W addition
- the workability is very good.
- the oxygen and carbon contents are slightly increased, the number of particles is slightly increased, and both results are good. became.
- Example 11 As the amount of oxygen and carbon increased, the workability slightly decreased and the number of particles showed a tendency to increase slightly.
- Example 12 Hf addition
- the average particle size of the subcomponent phase became slightly larger, and when the oxygen content and the carbon content increased, the workability slightly decreased.
- the number of particles showed a tendency to increase slightly.
- none of them was a problem.
- the workability can be further improved and the number of particles can be reduced by adjusting the average particle size of the subcomponent phase and reducing the amount of oxygen and carbon.
- the amount of oxygen and the amount of carbon should be as small as possible. There were no noticeable effects on other factors.
- Example 13 under the conditions of Example 4, the W amount is 15 at%, the average particle size of the subcomponent phase is 127 to 134 m, the amount of Ta in Example 5 is 15 at%, and the average particle size of the subcomponent phase is 117 to 120 i um.
- the Hf content of 6 is 15at% and the average particle size of the subcomponent phase is 158 to 162 / ⁇ Table 5 shows the results for all the kings and particles.
- Example 13 Example 14, and Example 15 shown in Table 5, no arcing occurred.
- Example 13 (W addition) and Example 14 (Ta addition) the workability is very good, and when the amount of oxygen and the amount of carbon are slightly increased, the number of particles is slightly increased. In both cases, good results were obtained.
- Example 15 (addition of Hf), the average particle size of the subcomponent phase was slightly increased, and when the oxygen content and the carbon content were large, the workability slightly decreased. However, this level was acceptable and was not particularly problematic.
- the workability can be further improved and the number of particles can be reduced by adjusting the average particle size of the subcomponent phase and reducing the amount of oxygen and carbon.
- the amount of oxygen and the amount of carbon should be as small as possible. There were no noticeable effects on other factors.
- Example 16 when the W amount is 15 at% and the average particle size of the subcomponent phase is 120 to 130 m under the conditions of Example 7, as Example 17, the Ta amount of Example 8 is 15 at%,
- the average particle size of the component phase is 170 to 175 / ⁇ ⁇
- Example 18 as the case where the Hf amount of Example 9 is 15 at% and the average particle size of the subcomponent phase is 180 to 190 / ⁇ ⁇
- Table 6 shows the results for the processability, arcing, and number of parts when the average particle size, relative density, oxygen content, and carbon content of the matrix are changed.
- Example 16 Example 17, and Example 18 shown in Table 6, no arcing occurred in any case.
- the average particle size of the subcomponent phase was slightly increased, and when the amount of carbon was increased tl, the workability was slightly reduced, but the others were very good.
- Example 17 In the case of Example 17 (Ta addition), the average particle size of the subcomponent phase slightly increased, and the workability decreased slightly as the oxygen content and the carbon content increased. However, there were no major fluctuations.
- Example 18 Hf addition
- the average particle size of the subcomponent phase was increased, and the cacheability decreased slightly as the oxygen content and carbon content increased. There was no significant change in the number of particles. However, none of them was a problem. Conversely, when this was reduced, the processability was improved and the number of particles tended to decrease.
- the workability can be further improved by adjusting the average particle size of the subcomponent phase and decreasing the oxygen content and the carbon content.
- it can be said that it is desirable that the amount of oxygen and carbon be as small as possible. There were no noticeable effects on other factors.
- the refractory metals ruthenium, rhodium, and iridium which are the main components in the present invention, are all Group 8 elements and are similar elements. In this example, each alone Although examples of combinations of these elements and subcomponents have been shown, it should be understood that similar results can be obtained with a refractory alloy to which these are added in combination. Therefore, the present invention includes alloys in which ruthenium, rhodium and iridium are added in combination.
- tungsten, tantalum, and hafnium are in different groups as groups 6, 5, and 4 in the periodic table of elements, but as shown in the examples of the present invention, these are the aforementioned ruthenium, rhodium, and so on.
- iridium When added to iridium, it was confirmed that similar properties and effects were exhibited. Therefore, it should be understood that similar effects and effects are exhibited even when these metals are added in combination. Therefore, it goes without saying that the case where these are added in combination is also included in the present invention.
- the alloy-sintered sputtering target made of a refractory metal mainly composed of ruthenium, rhodium or iridium according to the present invention is a metal particle other than the main component that forms a matrix by improving the yarn and weave of the target. , Prevents impurities from falling off, reduces gas components and other impurities, improves density, reduces arcing particles during sputtering, improves film formation quality, and improves target processability Therefore, the present invention is extremely useful as a film forming material for semiconductor elements, particularly as a gate electrode material or a film-forming notching target for various diffusers.
- FIG. 1 is a diagram showing the structure of a refractory metal target of Example 1-2.
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EP07714782.5A EP2003226B1 (en) | 2006-02-22 | 2007-02-22 | Sintered sputtering target made of high-melting metals |
US12/279,067 US8118984B2 (en) | 2006-02-22 | 2007-02-22 | Sintered sputtering target made of refractory metals |
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EP2270252A1 (en) * | 2008-03-17 | 2011-01-05 | Nippon Mining & Metals Co., Ltd. | Sintered target and method for production of sintered material |
WO2022004354A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社フルヤ金属 | スパッタリングターゲット及びその製造方法 |
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JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
US7951708B2 (en) * | 2009-06-03 | 2011-05-31 | International Business Machines Corporation | Copper interconnect structure with amorphous tantalum iridium diffusion barrier |
JP5863411B2 (ja) * | 2011-11-17 | 2016-02-16 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
CN105026607B (zh) * | 2013-01-28 | 2017-05-31 | 吉坤日矿日石金属株式会社 | 稀土磁铁用溅射靶及其制造方法 |
JP5856710B2 (ja) | 2013-03-22 | 2016-02-10 | Jx日鉱日石金属株式会社 | タングステン焼結体スパッタリングターゲット |
CN110312818B (zh) * | 2016-11-21 | 2023-01-13 | 美题隆公司 | 用于生物传感器的钌合金 |
CN112359257A (zh) * | 2020-08-18 | 2021-02-12 | 长沙南方钽铌有限责任公司 | 一种钽合金、钽合金无缝管制备方法及钽合金无缝管 |
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EP2270252A1 (en) * | 2008-03-17 | 2011-01-05 | Nippon Mining & Metals Co., Ltd. | Sintered target and method for production of sintered material |
EP2270252A4 (en) * | 2008-03-17 | 2011-08-03 | Nippon Mining Co | SINTERED TARGET AND METHOD FOR PRODUCTION OF SINTERED MATERIAL |
WO2022004354A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社フルヤ金属 | スパッタリングターゲット及びその製造方法 |
Also Published As
Publication number | Publication date |
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KR101026660B1 (ko) | 2011-04-04 |
EP2003226A4 (en) | 2009-04-01 |
US8118984B2 (en) | 2012-02-21 |
TW200738899A (en) | 2007-10-16 |
JPWO2007097396A1 (ja) | 2009-07-16 |
TWI346714B (ja) | 2011-08-11 |
CN101389784B (zh) | 2011-04-20 |
EP2003226B1 (en) | 2013-04-24 |
EP2003226A1 (en) | 2008-12-17 |
KR20080087169A (ko) | 2008-09-30 |
US20090173627A1 (en) | 2009-07-09 |
JP4860685B2 (ja) | 2012-01-25 |
CN101389784A (zh) | 2009-03-18 |
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