WO2007076718A1 - Film multicouche magnetique forme ferme comprenant ou non un noyau metallique et procede de fabrication correspondant et application correspondante - Google Patents

Film multicouche magnetique forme ferme comprenant ou non un noyau metallique et procede de fabrication correspondant et application correspondante Download PDF

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Publication number
WO2007076718A1
WO2007076718A1 PCT/CN2006/003799 CN2006003799W WO2007076718A1 WO 2007076718 A1 WO2007076718 A1 WO 2007076718A1 CN 2006003799 W CN2006003799 W CN 2006003799W WO 2007076718 A1 WO2007076718 A1 WO 2007076718A1
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Prior art keywords
layer
magnetic
multilayer film
closed
magnetic multilayer
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PCT/CN2006/003799
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English (en)
French (fr)
Inventor
Xiufeng Han
Ming Ma
Qihang Tan
Hongxiang Wei
Lixian Jiang
Yunan Han
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Institute Of Physics, Chinese Academy Of Sciences
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Priority claimed from CN2005101353707A external-priority patent/CN1992105B/zh
Priority claimed from CN2005101353656A external-priority patent/CN1992104B/zh
Priority claimed from CNB2006100001917A external-priority patent/CN100437817C/zh
Priority claimed from CNB2006100111688A external-priority patent/CN100476995C/zh
Priority claimed from CN200610011166A external-priority patent/CN101000821B/zh
Priority claimed from CN2006100111673A external-priority patent/CN101000822B/zh
Application filed by Institute Of Physics, Chinese Academy Of Sciences filed Critical Institute Of Physics, Chinese Academy Of Sciences
Priority to US12/159,657 priority Critical patent/US7936595B2/en
Priority to JP2008547841A priority patent/JP4959717B2/ja
Publication of WO2007076718A1 publication Critical patent/WO2007076718A1/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Definitions

  • the present invention relates to a closed shape magnetic multilayer film, a metal core-containing closed shape magnetic multilayer film, and a method of fabricating the same, and a magnetic random access memory (MRAM) based on these closed shape magnetic multilayer films ) and its control methods.
  • MRAM magnetic random access memory
  • GMR Giant Magneto Resistance
  • MRAM magnetic random access memory
  • the bit line and the write word line, the read word line are respectively located above and below the memory cell, arranged in a vertical and horizontal direction, and the memory cell is located at the intersection of the bit line and the word line.
  • the write operation of the MRAM memory cell is performed by the magnetic field inversion of the bit layer (layer) driven by the combined magnetic field generated by the two pulse currents flowing through the word line and the bit line, so this mode of operation is obviously dependent on the word line.
  • the magnetic field generated by the two pulse currents of the bit line is such an intermediate link to manipulate the magnetization state of the memory cell, which results in a complicated structure and process preparation process, which brings great inconvenience and embarrassment to the processing and integration of the MRAM device. cost.
  • the memory cells used in the prior art such as a bit layer (soft magnetic layer) and other pinned magnetic layers (or hard magnetic layers), have a non-closed structure, such as a rectangle, an ellipse, etc.
  • the structure will bring about large demagnetizing field and shape anisotropy under high-density small-size memory cells. This kind of defect will undoubtedly increase the reversal field (coercive force) and work of the bit layer (soft magnetic layer).
  • the magnetic coupling and mutual interference between the magnetic memory cells are inevitable in the high density state, and the uniformity and consistency of the magnetic properties of the memory cells also bring many adverse effects and magnetic noise, and the memory cells are given.
  • the design and preparation brings a lot of structural and process complexity.
  • the magnetic tunnel junction as a storage unit generally uses a sandwich type artificial pinning composite bit layer and a bottom pinning layer (for example: Co-Fe Ru/Co-Fe-B and Py/Ru/Co-Fe-B).
  • a sandwich type artificial pinning composite bit layer and a bottom pinning layer for example: Co-Fe Ru/Co-Fe-B and Py/Ru/Co-Fe-B.
  • the inversion field and power consumption of the bit layer have not been reduced to an ideal and expected minimum.
  • new geometry and device design principles must be used to eliminate the demagnetizing field generated by the memory cell itself after micro-machining and nano-machining small-sized patterning of the magnetic multilayer film, and further reduce the bit layer of the memory cell. Shape anisotropy. Summary of the invention
  • the object of the present invention is to overcome the defects in the physical structure of the existing magnetic multilayer film system, and to provide a closed shape magnetic multilayer film without demagnetizing field and weak shape anisotropy by changing the geometry of the multilayer film system. .
  • Another object of the present invention is to overcome the physical structural defects of the prior art magnetic multilayer film system, and to provide a metal core-free closure without demagnetizing field and weak shape anisotropy by changing the geometry of the multilayer film system. Shaped magnetic multilayer film.
  • a further object of the present invention is to provide a method for producing a magnetic multilayer film of the above-described closed shape and a magnetic multilayer film having a closed shape of a metal core.
  • Magnetic coupling and mutual interference between the magnetic memory cells in the state which causes some technical difficulties and defects in the MRAM write and read operation methods, thereby providing a magnetic multilayer film and a metal core-containing closure based on the above closed shape.
  • a magnetic multilayer film of a shape, a magnetic random access memory capable of eliminating a demagnetizing field of a memory cell, attenuating its shape anisotropy, and magnetic interaction and interference, and a control method thereof.
  • the present invention provides a magnetic multilayer film comprising a plurality of layers of a conventional magnetic multilayer film deposited on a substrate, the magnetic multilayer film being micromachined, each magnetic multilayer
  • the membrane unit has a closed annular shape including a circular ring shape and an elliptical ring shape, so that the magnetic moment or magnetic flux of each of the ferromagnetic films in the magnetic unit can form a closed state in a clockwise or counterclockwise direction.
  • the inner diameter of the circular ring is 10 to 100000 nm, and the outer diameter is 20 to 200000 nm, and the ring width is between 10 and 100,000 nm.
  • the minor axis of the elliptical inner ring is 10 to 100000 nm
  • the ratio of the minor axis to the major axis is 1: 1.1 to 5
  • the minor axis of the elliptical outer ring is 20 to 200000 nm
  • the ring width is between 10 and 1000OOm.
  • the metal core-containing closed shape magnetic multilayer film provided by the present invention further comprises a metal core at a geometric center position of the closed shape magnetic multilayer film, and the metal core has a circular or elliptical cross section correspondingly.
  • the radius of the toroidal metal core is 5 to 50000 nm
  • the minor axis of the elliptical metal core is 5 to 50000 nm
  • the ratio of the minor axis to the major axis of the ellipse is 1: 1.1 to 5.
  • the shape of the metal core matches the shape of the magnetic multilayer film of the closed shape, that is, if the shape of the magnetic multilayer film is circular, the metal core is also circular, and if the magnetic multilayer film is patterned
  • the shape of the elliptical ring is such that the metal core is elliptical.
  • the material of the metal core is a metal material having a small electrical resistivity, preferably an Au, Ag, Pt, Ta, W, Ti, Cu, Al or Si-Al alloy, etc., such as a SiAl alloy, etc.;
  • the current is applied from the outside, and the magnetization state of the memory cell after patterning of the magnetic multilayer film is controlled by the ring magnetic field generated by the current, so that the read and write operations of the magnetic multilayer film storage unit can be more conveniently performed, and at the same time, large
  • the pulse write current may cause damage to the barrier layer during repeated write operations' (current migration atomic effect).
  • the closed shape magnetic multilayer film and the metal core-containing closed shape magnetic multilayer film are classified according to the formed material, including a pinned type, a pinned type and Double intermediate layer type.
  • SL buffer conductive layer
  • HFM hard magnetic layer
  • CL overlay layer
  • SL buffer conductive layer
  • AFM antiferromagnetic pinning layer
  • I intermediate layer
  • FM soft magnetic layer
  • CL cover layer
  • the double-interlayer magnetic multilayer film having no pinning type and closed ring is a buffer conductive layer (hereinafter referred to as SL) 1.
  • the first hard magnetic layer (hereinafter referred to as HFM1) 21 a first intermediate layer (hereinafter abbreviated as II) 31, a soft magnetic layer (hereinafter referred to as SFM) 4, a second intermediate layer (hereinafter abbreviated as 12) 32, a second hard magnetic layer (hereinafter referred to as HFM2) 22, and a cover layer (hereinafter referred to as Referred to as CL) 5.
  • SL buffer conductive layer
  • AFM1 first antiferromagnetic pinning layer
  • FM1 first pinned magnetic layer
  • FM1 first intermediate layer
  • 11 a soft magnetic layer
  • FM soft magnetic layer
  • a second intermediate layer hereinafter referred to as 12
  • the substrate is a conventional substrate, such as Si, Si / Si0 2 , SiC, SiN or GaAs substrate, etc., a thickness of 0.3 ⁇ lmm;
  • the lower buffer conductive layer SL is composed of a metal material, preferably Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al or Si-Al alloy, etc., having a thickness of 2 to 200 nm;
  • the hard magnetic layer HFM, the first hard magnetic layer and the second hard magnetic layer are composed of a material having a large magnetoresistance effect, such as Co, Fe, Ni, CoFe, NiFeCo, CoFeB, CoFeSiB, etc., and the thickness is 2-20 Nm;
  • the intermediate layer I, the first intermediate layer and the second intermediate layer are each composed of a non-magnetic metal layer or an insulator barrier layer, wherein the material of the non-magnetic metal layer is Ti, Zn, ZnMn, Cr, Ru, Cu, V Or TiC, the material of the barrier layer of the insulator such as A1 2 0 3 , MgO, TiO, ZnO, (ZnMn) 0, CrO, VO, or TiCO, the thickness of the intermediate layer is 0.5 ⁇ 10 nm;
  • the soft magnetic layer SFM is composed of a ferromagnetic material having a spin polarization ratio ⁇ and a small coercive force, including - Co, Fe, Ni or their metal alloys NiFe, CoFeSiB, NiFeSiB, or amorphous CoiQ.
  • Qx -yFe x B y (0 ⁇ x ⁇ 100, 0 ⁇ y ⁇ 20), or a Heusler alloy such as Co 2 MnSi, Co 2 Cr 0 6 Fe 0 .4Al;
  • constituent material of the soft magnetic layer is preferably Co 90 Fe 10 , Co 75 Fe 25 , Co 4 oFe 40 B 20 , or Ni 79 Fe 21 ; the thickness of the soft magnetic layer is l ⁇ 20nm;
  • the cover layer CL is composed of a metal material that is not easily oxidized and has a large electrical resistance, and is preferably Ta, ⁇ , Ru, Pt, Ag, Au, Cr, or the like, or an alloy thereof, and has a thickness of 2 to 20 nm, and is used for protection. The material is not oxidized.
  • the antiferromagnetic pinning layer AFM, the first antiferromagnetic pinning layer and the second antiferromagnetic pinning layer are all composed of an alloy having antiferromagnetic properties, preferably IrMn, FeMn, PtMn, CrMn or Pt (Cr) , Mn) alloy, thickness of 3 ⁇ 30 mil;
  • the constituent material of the pinned magnetic layer FM, the first pinned magnetic layer and the second pinned magnetic layer is a ferromagnetic metal having a higher spin polarizability, such as Fe, Co, Ni and alloys thereof.
  • a CoFe alloy, a NiFe alloy, an amorphous CoFeB alloy, a CoFeSiB alloy, etc. having a thickness of 2 to 20 nm;
  • the present invention provides a method of preparing the closed shape magnetic multilayer film using a micromachining method, comprising the steps of:
  • a substrate after cleaning by a conventional method, depositing a lower buffer conductive layer on a conventional thin film growth apparatus (for example, magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, etc.)
  • a conventional thin film growth apparatus for example, magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, etc.
  • step 2) processing the substrate on which the magnetic multilayer film is deposited in step 2) into a closed ring or an elliptical ring structure by using a micromachining process and method; the specific steps of the micromachining process are as follows: , tm, then on the UV, deep UV exposure or electron beam exposure machine, according to the desired closed pattern (including the ring and the elliptical ring), the substrate is exposed, followed by development, fixing, post-baking, and then using ions
  • the etching method engraves the magnetic multilayer film into a closed shape, and finally immersing with a de-gelling agent to remove the glue;
  • the reactive ion etching machine can also be used for auxiliary degumming
  • step 3 On the etch-formed closed-shaped magnetic multilayer film obtained in the step 3), using conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, etc. Depositing an insulating layer to bury each closed annular multilayer film and isolating different units from each other;
  • conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, etc.
  • the insulating layer is a conventional insulator material, preferably SiO 2 , AI 2 O 3 , ZnO, TiO, SnO or organic molecular materials (such as polyvinyl chloride PVC, polyethylene PE, polypropylene PP, etc.), having a thickness of 100 to 1000 nm;
  • the step 4' For the preparation method of the magnetic multilayer film having a closed shape of the metal core, between the step 4) and the step 5) of the method for preparing the magnetic multilayer film of the above closed shape, the step 4') is included:
  • a metal core is prepared at the geometric center of the closed annular multilayer film, the metal core having a circular or elliptical cross section, wherein the radius or elliptical shape of the toroidal metal core
  • the micromachining process comprises: first positioning to a geometric center position of the closed annular multilayer film, and then using a micro-machining method such as focused ion beam etching, ultraviolet, deep ultraviolet exposure, electron beam exposure, and reactive etching to insulate
  • a micro-machining method such as focused ion beam etching, ultraviolet, deep ultraviolet exposure, electron beam exposure, and reactive etching to insulate
  • the layer is etched to form a columnar hole having a horizontal cross section of a circular or elliptical shape, and then a metal material is deposited at a hole position by an electrochemical deposition method, magnetron sputtering, focused ion beam assisted deposition, or the like to form a metal core;
  • the material of the metal core is a metal material having a small electrical resistivity, and is preferably Au, Ag, Pt, Ta, W, Ti, Cu, Al or a Si-Al alloy, or the like, such as a SiAl alloy.
  • the magnetic multilayer film obtained by the above method is further processed to extract the electrode, and the specific steps are as follows -
  • a conductive layer by conventional thin film growth means such as magnetron extinction, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like;
  • the conductive layer is a metal having a small resistivity, preferably Au, Ag, Pt, Cu, Al, SiAl, or the like, or a metal thereof, having a thickness of 2 to 200 nm; 7) processing a conductive layer into electrodes by a conventional semiconductor micromachining process, and each closed loop structure leads out four electrodes, thereby obtaining a component containing the magnetic multilayer film of the present invention;
  • the conventional semiconductor micromachining process comprises: firstly coating, pre-baking, and then using an lithographic plate with a pattern to be processed for exposure, followed by development, fixing, and post-exposure on an ultraviolet, deep ultraviolet exposure machine or an electron beam exposure machine. After baking, the conductive layer on the magnetic multilayer film is etched into the shape of four electrodes by ion etching, and finally immersed by a de-gelling agent or the like to remove the glue.
  • the magnetic multilayer film with or without a metal core shape of the present invention can be widely applied to various devices centered on a magnetic multilayer film, for example, a magnetic random access memory, a computer magnetic head, and a magnetic sensor. , magnetic logic devices and spin transistors.
  • the present invention provides a magnetic random access memory based on a closed magnetic multilayer film using the above-described closed magnetic magnetic multilayer film and a metal core-containing closed shape magnetic multilayer film as a memory cell.
  • the magnetic random access memory based on the closed magnetic multilayer film provided by the present invention includes the following types:
  • the present invention provides a magnetic random access memory based on a closed magnetic multilayer film, as shown in FIGS. 9A, 9B and 9C, comprising:
  • a memory read/write control unit array formed by a transistor TR unit 0 (including a source 0b, a drain 0a, and a lightly doped region 0c of the transistor), the read/write control unit array being integrated in the semiconductor substrate;
  • a storage unit 65 composed of a closed magnetic multilayer film storage unit (RML) and an array thereof, wherein the geometry of the storage unit 65 is a closed magnetic multilayer film; the closed metal core-containing magnetic multilayer film includes a non-nail
  • RML closed magnetic multilayer film storage unit
  • tie and pin type the characteristics of which are as described above.
  • the unit RML is directly connected.
  • the first contact conductive hole 3a and the second contact conductive hole 3b are respectively disposed on the source and the first drain of the transistor unit 0.
  • the first contact conductive hole 3a is provided with a ground line 4a, and the second contact conductive hole 3b is disposed.
  • the first transition metal layer 4b is disposed; the first transition metal layer 4b is connected to the lower end of the magnetic multilayer film storage unit 65; the word line 62 is also the gate of the transistor 0; the bit line 4c is arranged Above the magnetic multilayer film storage unit 65, perpendicular to the word line 62, and directly connected to the magnetic multilayer film storage unit 65; la, lb and lc are insulating spacer materials. And the bit line 4c is covered with an insulating passivation layer lf.
  • the present invention A control method for a magnetic random access memory based on a closed magnetic multilayer film, which is to perform a read operation and a write operation of an MRAM by a magnitude and a direction of a current flowing through a memory cell RML, as follows:
  • a specific low threshold / ⁇ corresponding current density Jc corpse 10 ⁇ 10 2 A/cm 2
  • current current density X closed magnetic multilayer film cross-sectional area
  • the write current exceeds the high critical current value I C2 (ie, greater than the critical current)
  • the magnetization state of the pinned magnetic layer (or hard magnetic layer) that is oriented clockwise or counterclockwise will be reversed, which will result in
  • the bit layer (soft magnetic layer) and the pinned magnetic layer (or hard magnetic layer) are inverted together to produce the same magnetization orientation, so the write current must be less than the high critical current value / C2 .
  • the read current is less than the low critical current value / c /
  • the write current must be greater than the low critical current / and less than the high critical current / c
  • the present invention provides another magnetic random access memory based on a closed metal core-containing magnetic multilayer film, as shown in Figs. 10A, 10B and 10C, comprising:
  • a memory read/write control unit array formed by a transistor TR unit 0 (including a source 0b, a drain 0a, and a lightly doped region 0c of the transistor), the read/write control unit array being integrated in the semiconductor substrate;
  • a memory cell 65 composed of a closed metal core-containing magnetic multilayer film memory cell and an array thereof, wherein the memory cell has a closed metal core-containing magnetic multilayer film; the closed metal core magnetic multilayer film It includes two types, non-pinning and pinning, and its characteristics are as described above.
  • transition metal layer 4b connecting the transistor TR unit and the closed metal core-containing magnetic multilayer film storage unit RML;
  • the second bit line 4d is directly connected to the metal core in the closed metal core-containing magnetic multilayer film storage unit RML, and is separated from the first bit line 4e by an insulating layer. La, lb, lc, le, and If are insulating spacers.
  • a current is applied to the metal core in the closed metal core-containing magnetic multilayer film storage unit RML. Since the magnetic field generated by the current is distributed in a ring shape, the magnetization state of the closed magnetic multilayer film can be conveniently controlled.
  • the write current exceeds the threshold current value I C2 (ie, greater than the critical current)
  • the magnetization state of the pinned magnetic layer (or hard magnetic layer) that is originally oriented clockwise or counterclockwise will be reversed, resulting in a bit
  • the layer (soft magnetic layer) and the pinned magnetic layer (reference layer or hard magnetic layer) are inverted together to produce the same magnetization orientation, so the write current must be less than the threshold current value J C2 .
  • the read current is less than the low critical current / C 7, and the write current must be greater than the low critical current / c / and less than the high critical current / ⁇ .
  • the present invention provides another magnetic random access memory based on a closed metal core-containing magnetic multilayer film controlled by a transistor, each of which is read and written, as shown in Figs. 11A, 11B and 11C, and includes:
  • a memory read/write control unit array formed by the first and second transistors TR unit 0 (including the source Obi and 0b2 of the first and second transistors, the shared drain 0a1, and the lightly doped region 0c),
  • the read/write control unit array is integrated in the semiconductor substrate; the first transistor switch controls the read operation and the third transistor switch controls the write operation.
  • the gate 67 of the first transistor also serves as the first word line 67 (shared), and the gate 63 of the second transistor also serves as the second word line 63 (shared);
  • the transistor has a drain O1, a source 0b1 of the first transistor, and a source 0b2 of the second transistor, respectively, a first conductive contact hole 3a, a second conductive contact hole 3b, and a third conductive contact hole 3b2.
  • the transition metal layer 4a above the first contact hole 3a also constitutes the ground line 4a; the fourth conductive contact hole 3d and the second transition metal
  • the layer 4f is connected; the second transition metal layer 4f is connected as a bottom conductive electrode to the lower end of the circular or elliptical annular magnetic multilayer film storage unit 65, and the circular or elliptical annular magnetic multilayer film storage unit 65
  • the upper end is provided with a bit line 4c and connected thereto;
  • the upper end of the circular or elliptical metal core disposed at the center of the annular or elliptical annular magnetic multilayer film storage unit 65 is in contact with the bit line 4c, and the lower end is connected to the first transition metal layer 4b; the fifth insulating passivation layer If Covered on the bit line 4c.
  • the present invention provides a closed magnetic ring-shaped structure prepared by a micromachining method in which a magnetic multilayer film containing or not having a metal core shape is closed, instead of the conventional magnetic multilayer film.
  • a magnetic multilayer film containing or not having a metal core shape is closed, instead of the conventional magnetic multilayer film.
  • the magnetization state of the magnetic multilayer film is not easily changed due to the influence of the demagnetizing field and the shape anisotropy caused by the conventional structure, and it must be externally applied in the application of the device.
  • a large magnetic field or a synthetic magnetic field generated by a large pulse current manipulates its magnetization state, which consumes a large amount of power and is costly, and brings many disadvantages to the processing, integration, and use of the device, such as noise and magnetic coupling between adjacent cells.
  • the invention can overcome the above defects by changing the geometric structure of the magnetic multilayer film, and improve the performance of the magnetic multilayer film, so that it has no demagnetizing field and minimum while maintaining the original characteristics and performance of the magnetic multilayer film.
  • the requirement of large-scale productization, that is, the magnetic multilayer film with or without a metal core shape of the present invention is more suitable for the preparation of a deviceized magnetic random access memory, a novel magnetic multilayer film sensor.
  • the data write operation of the MRAM relies on the interaction of the magnetic fields generated by the write line and the bit line to manipulate the magnetization state of the bit layer of the memory cell. Therefore, in the process structure, two metal wiring layers are required to respectively arrange the write lines. And bit lines.
  • the magnetic random access memory based on the closed magnetic multilayer film provided by the present invention adopts a new annular magnetic multilayer film geometry as a storage unit, and utilizes both positive and negative directions.
  • the torque effect causes the data read and write operations to be completed by a 3 ⁇ 4 line;
  • the ring-shaped magnetic field generated by the current in the metal core drives the bit layer magnetization state of the closed magnetic multilayer film, and the driving magnetic field spatial distribution matches the geometry of the memory cell. Better, thus making the drive of the device easier.
  • the magnetic random access memory based on the closed magnetic multilayer film of the present invention avoid the adverse effects caused by the uneven distribution of the magnetic field space, which is beneficial to the stability of the device performance and the extension of the device lifetime;
  • the magnetic random access memory based on the closed magnetic multilayer film of the present invention removes a writing line dedicated to the writing operation in the prior art, which greatly reduces the complexity of the conventional MRAM structure, the difficulty and cost of the manufacturing process, and The shortcomings of the prior art are overcome, and the application value of the MRAM is improved.
  • FIG. 1 is a schematic view showing the structure of a pinned-type, single-barrier closed elliptical ring-shaped magnetic multilayer film of the present invention
  • 1-1 is a top view
  • FIG. 1-2 is a cross-sectional structural view
  • FIG. 2 is a schematic structural view of a pinned-type, single-barrier closed elliptical annular magnetic multilayer film of the present invention
  • FIG. 2-1 is a top view
  • FIG. 2-2 is a cross-sectional structural view
  • FIG. 3 is a schematic structural view of a pinned-type, metal core-containing, single-barrier closed elliptical ring-shaped magnetic multilayer film of the present invention
  • FIG. 3-1 is a top view
  • FIG. 3-2 is a cross-sectional structural view
  • FIG. 4 is a schematic view showing the structure of a pinned type, metal core-containing, single-barrier closed elliptical ring-shaped magnetic multilayer film of the present invention
  • FIG. 4-1 is a top view
  • FIG. 4-2 is a cross-sectional structural view
  • Figure 5 is a schematic view showing the structure of a pinned-type, closed elliptical double interlayer magnetic tunnel junction multilayer film of the present invention
  • Figure 5-1 is a top view
  • Figure 5-2 is a cross-sectional structure view
  • FIG. 6 is a schematic structural view of a double-intermediate magnetic tunnel junction multilayer film of a pinned type and a closed elliptical ring according to the present invention
  • FIG. 6-1 is a top view
  • FIG. 6-2 is a cross-sectional structural view
  • Figure 7 is a schematic view showing the structure of a pin-free type, metal core-containing, closed elliptical double intermediate layer magnetic tunnel junction multilayer film of the present invention
  • Figure 7-1 is a top view
  • Figure 7-2 is a cross-sectional structure view. ;
  • FIG. 8 is a schematic structural view of a pinned type, metal core-containing, closed elliptical double interlayer magnetic tunnel junction multilayer film of the present invention
  • FIG. 8-1 is a top view
  • FIG. 8-2 is a cross-sectional structural view
  • 1 to 8 1-buffered conductive layer; 2-hard magnetic layer; 3-intermediate layer; 4-soft magnetic layer; 5-cover layer; 6-metal core; 8-antiferromagnetic pinning layer; - pinned magnetic layer; 21 - first hard magnetic layer; 22 - second hard magnetic layer; 31 - first intermediate layer; 32 - second intermediate layer; 81 - first antiferromagnetic pinning layer; a second antiferromagnetic pinning layer; 91 a first pinned magnetic layer; 92 - a second pinned magnetic layer; 31 - a first intermediate layer; 32 - a second intermediate layer;
  • Figure 9 is a schematic view showing the structure of an MRAM cell based on a magnetic random access memory of a closed (including a ring-shaped and elliptical ring-shaped) magnetic multilayer film in Embodiment 65;
  • Figure 10 is a closed-cell (including annular and elliptical ring-shaped metal core-containing magnetic multilayer film) in Example 66, using one transistor to control a memory cell read and write process while simultaneously Schematic diagram of an MRAM cell structure of a magnetic random access memory operating using a magnetic field driven mode generated by a current in a metal core;
  • Figure 11 is a closed-cell (including annular and elliptical ring-shaped metal core-containing magnetic multilayer film) in Example 67, using two transistors to control a memory cell read and write process, respectively. And a cross-sectional structure diagram of the MRAM cell of the magnetic random access memory operating with the magnetic field driven by the current in the metal core;
  • 0 transistor TR, 0a transistor TR drain, Ob is the source of transistor TR
  • 0M and 0b2 are the source of the first transistor and the second transistor
  • 0c transistor light miscellaneous region 62 is the gate of transistor 0 (word line WL)
  • 63 and 67 are the gates of the second transistor and the first transistor (first word line WL1 and second word line WL2), la, lb, lc, ld, respectively.
  • Le is the insulating layer in the MRAM cell, If is the insulating passivation layer, 3a is the first conductive contact hole, 3b is the second conductive contact hole, 3b2 is the third conductive contact hole, 4a ground line GND, 4b is the first The transition metal layer, 4e is the first bit line, 4d is the second bit line, and 65 is the closed magnetic multilayer film storage unit belly L. detailed description
  • a lower buffer conductive layer 1 Au having a thickness of 2 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm were sequentially deposited on a 1 mm thick Si0 2 /Si substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the magnetic multilayer film is engraved into a ring shape by ion etching. Finally, the glue is removed by immersion to form a ring-shaped geometric structure.
  • the inner diameter of the ring is 500 nm
  • the outer diameter is 800 nm
  • the width is 300nm.
  • a layer of 100 nm thick is deposited on the etched annular magnetic multilayer film by conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, and the like.
  • each annular multilayer film is buried and isolated from each other, and is etched by using micro-machining technology in the prior art, that is, firstly, the position where the annular multilayer film is deposited is positioned on the focused ion beam device. Then, the Si0 2 insulating layer is etched by a focused ion beam etching method to expose the annular magnetic multilayer film buried under the insulating layer.
  • the high-vacuum magnetron sputtering equipment is used to deposit a conductive layer Au with a thickness of 2mn.
  • the growth conditions are as described above, and the electrodes are processed by conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue-free immersion is performed to remove the glue, thereby obtaining the pin-free type annular magnetic multilayer film of the present invention.
  • a pin-free type annular magnetic multilayer film was prepared by the micromachining method in the same manner as in Example 1, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 1.
  • Table 1 Structure of the present invention for preparing a pin-free type annular magnetic multilayer film by a micromachining method.
  • Thickness lnm lnm lnm lnm lnm lnm lnm lnm lnm composition CoFeB NiFeSiB NiFe NiFe CoFeB NiFeSiB soft magnetic layer 4
  • Thickness 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm Composition Al Au Cu Al Au Cu Conductive layer
  • a low-voltage buffer layer l Au having a thickness of 2 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm are sequentially deposited on a 1 mm-thick Si0 2 /Si substrate cleaned by a conventional method using a high-vacuum magnetron sputtering apparatus.
  • the deposited magnetic multi-layer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-supply, and then on an electron beam exposure machine, the substrate is exposed according to a desired closed elliptical ring, and then developed, Fixing, post-supply, and then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 600 nm, the outer diameter of the long axis is 900 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:1.2.
  • a thin layer of 100 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the SiO 2 insulating layer is buryed and isolated from each other by the closed annular multilayer film, and is etched by using the micromachining technique in the prior art, that is, firstly, a closed rectangular ring is deposited on the focused ion beam device.
  • the growth conditions are as described above, and the electrode is processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the X pattern to be added is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the degumming is carried out by immersion in a de-glue, that is, the magnetic multi-layer film of the pin-free type closed shape of the present invention is obtained, and the structural schematic diagram thereof is shown in FIG. Example 9,
  • a lower buffer conductive layer 1 Au having a thickness of 2 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm were sequentially deposited on a 1 mm thick Si0 2 /Si substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on a beam exposure machine according to a desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, the outer diameter of the long axis is 2800 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • each closed annular multilayer film is buried and isolated from each other, and is etched by using micro-machining technology in the prior art, that is, firstly, a closed rectangular annular multilayer is deposited on the focused ion beam device.
  • a layer of conductive layer Au with a thickness of 2 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrode is processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming to obtain the magnetic multi-layer film of the pinned-type closed shape of the present invention.
  • Thickness lnm lnm lnm lnm lnm lnm lnm lnm lnm composition CoFeB FeSiB NiFe NiFe CoFeB NiFeSiB soft magnetic layer 4
  • Thickness 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm Conductive layer composition Al Au Cu Al Au Cu Short axis inner diameter lOnm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOnm Closed elliptical short axis outer diameter 20nm 400 nm 2000 nm 3200 nm 4000 run 200000nm Ring structure long axis Inner diameter 20nm 400 nm 3000 nm 4800 nm 8000 nm 400000nm Long axis outer diameter 30nm 600 nm 4000 nm 6400 nm 10000 nm 500000nm Example 16.
  • a low-buffered conductive layer l Au having a thickness of 2 nm and an antiferromagnetic pinning layer (AFM) having a thickness of 10 nm were sequentially deposited on a 0.8 mm thick Si/SiO 2 substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • AFM antiferromagnetic pinning layer
  • the deposited magnetic multilayer film is micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on an electron beam exposure machine according to a desired annular pattern, followed by development, Fixing, post-baking, then engraving the magnetic multilayer film into a ring shape by ion etching, and finally degumming with a de-glue agent to form a ring-shaped geometric structure, the inner diameter of the ring is 300 nm, the outer diameter is 600 nm, and the width is It is 300 nm.
  • each annular multilayer film is buried and isolated from each other, and is etched by using micro-machining technology in the prior art, that is, firstly, the position where the annular multilayer film is deposited is positioned on the focused ion beam device. Then, the Si0 2 insulating layer is etched by a focused ion beam etching method to expose the annular magnetic multilayer film buried under the insulating layer.
  • a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being coated, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming to obtain the pinned type annular magnetic multilayer film of the present invention. Examples 17 to 22
  • a pin-type annular magnetic multilayer film was prepared by the micromachining method in the same manner as in Example 3, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 3.
  • a low-buffered conductive layer l Au having a thickness of 2 nm and an antiferromagnetic pinning layer (AFM) having a thickness of lOnm were sequentially deposited on a 0.8 mm thick Si/SiO 2 substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • AFM antiferromagnetic pinning layer
  • a pinned magnetic layer (FM) having a thickness of '3 nm 9 Co 9 oFe 10 ; then depositing 1 nm of Al, an insulating layer formed by plasma oxidation for 50 seconds as an intermediate layer (1) 3;
  • a soft magnetic layer (FM) 4 Co 9Q F eu) having a thickness of 3 nm and a cover layer 5 Au having a thickness of 2 nm were sequentially deposited on the layer.
  • the deposited magnetic multilayer film is available The micromachining technology in the technology, that is, first, after gluing, pre-baking, and then on the electron beam exposure machine, the substrate is exposed according to the desired closed elliptical ring, followed by development, fixing, post-baking, and then ion etching.
  • the magnetic multilayer film was engraved into a closed shape, and finally degummed with a de-gelling agent to form a closed elliptical ring geometry.
  • the elliptical ring has a short axis inner diameter of 500 nm, a short axis outer diameter of 800 nm, and a long axis inner diameter of 600nm, the long axis outer diameter is 900nm, and the ratio of the short axis of the elliptical ring to the inner diameter of the long axis is 1:1.2.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • each closed annular multilayer film is buried and isolated from each other, and is etched by using micro-machining technology in the prior art, that is, firstly, a closed loop is deposited on the focused ion beam device. The position of the film, followed by etching the SiO 2 insulating layer by a focused ion beam etching method, exposes the closed-shaped magnetic multilayer film buried under the insulating layer. Finally, a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, by gluing, pre-baking, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed to remove the glue, that is, the magnetic multilayer film of the pinned type closed shape of the present invention is obtained, and the structure diagram thereof is shown in FIG. 2 .
  • Example 24 Example 24
  • a lower buffer conductive layer 1 Au having a thickness of 2 nm and an antiferromagnetic pinning layer (AFM) having a thickness of 10 nm were sequentially deposited on a 0.8 mm thick Si/SiO 2 substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • AFM antiferromagnetic pinning layer
  • a pinned magnetic layer (FM) having a thickness of 3 nm 9 Co 9 oFe 10 ; then depositing 1 nm of A1, an insulating layer formed by plasma oxidation for 50 seconds as an intermediate layer (I) 3; in the intermediate layer A soft magnetic layer (FM) 4 Co 9Q Fe 1 () having a thickness of 3 nm and a cover layer 5 Au having a thickness of 2 nm were sequentially deposited thereon.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on the electron beam exposure machine according to the desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, the outer diameter of the long axis is 2800 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the SiO 2 insulating layer is buryed and isolated from each other, and is etched by a micromachining technique in the prior art, that is, firstly, a closed annular multilayer is deposited on the focused ion beam device. The position of the film, followed by etching the SiO 2 insulating layer by a focused ion beam etching method, The closed-shaped magnetic multilayer film buried under the insulating layer is exposed.
  • a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming to obtain the magnetic multilayer film of the pinned closed shape of the present invention.
  • Example 31 Preparation of magnetic non-pinned ring-shaped metal core-containing magnetic multilayer film by micromachining method
  • a lower buffer conductive layer 1 Ru having a thickness of 5 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm are sequentially deposited on a 1 mm thick Si0 2 /Si substrate cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the magnetic multilayer film is engraved into a ring shape by ion etching, and finally degummed with a de-gelling agent to form a ring-shaped geometric structure.
  • the inner diameter of the ring is 500 nm
  • the outer diameter is 800 nm
  • the width is 300nm.
  • a layer of 100 nm thick is deposited on the etched annular magnetic multilayer film by conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, and the like.
  • the Si0 2 insulating layer is buryed and isolated from each other.
  • the geometric center position of the annular multilayer film is positioned on the focused ion beam device, and then the Si0 2 insulating layer is etched by the focused ion beam etching method to form a diameter. It is a 300 nm columnar hole, and then a metal material Au is deposited at the hole position by a focused ion beam assisted deposition method to form an Au metal core 6 having a diameter of 300 nm.
  • etching is performed by using the micro-machining technique in the prior art, that is, the position where the annular multilayer film is deposited is firstly positioned on the focused ion beam device, and then the Si0 2 insulating layer is engraved by the focused ion beam etching method. The etch causes the annular magnetic multilayer film buried under the insulating layer to be exposed. Finally, a layer of conductive layer Au with a thickness of 2 nm is deposited by a high-vacuum magnetron sputtering apparatus. The growth conditions are as described above, and the electrode is processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the degumming agent is used for immersion to obtain a magnetic multi-layer film of the pin-free type annular metal-containing core of the present invention. Examples 32 to 37
  • a magnetic multi-layer film of a pin-free type annular metal-containing core was prepared by the micromachining method in the same manner as in Example 31, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 5.
  • Thickness lnm lnm lnm lnm lnm lnm lnm lnm lnm composition CoFeB NiFeSiB NiFe NiFe CoFeB NiFeSiB soft magnetic layer 4
  • Thickness 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm Composition Al Au Cu Al Au Cu Conductive layer
  • a low-voltage buffer layer l Au having a thickness of 2 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm are sequentially deposited on a 1 mm-thick Si0 2 /Si substrate cleaned by a conventional method using a high-vacuum magnetron sputtering apparatus.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on a beam exposure machine according to a desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-glue to remove the glue, that is, forming a closed elliptical ring geometry
  • the short-axis inner diameter of the elliptical ring is 500 nm
  • short The outer diameter of the shaft is 800 nm
  • the inner diameter of the long axis is 600 nm
  • the outer diameter of the long axis is 900 nm
  • the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:1.2.
  • a thin layer of 100 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the Si0 2 insulating layer is etched by a focused ion beam etching method to form a horizontal A columnar hole having an elliptical cross section, wherein the short axis of the ellipse is 300 nm, and the ratio of the minor axis to the major axis is 1: 1.2, and then a focused ion beam assisted deposition method is used to deposit the metal material Au at the hole position to form a cross section.
  • the cylindrical Au metal core 6 having a rectangular shape has a sectional shape as described above.
  • the etching is then performed using the micromachining technique of the prior art, that is, the deposition is first closed on the focused ion beam device. Position of the rectangular ring-shaped multi-layered film, followed by focused ion beam etching method for etching the insulating layer Si0 2, such that a closed shape of the magnetic multilayer film be buried under the insulating layer is exposed. Finally, a layer of conductive layer Au with a thickness of 2 nm is deposited by a high-vacuum magnetron sputtering apparatus. The growth conditions are as described above, and the electrode is processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue-free immersion is performed to remove the glue, that is, the magnetic multi-layer film of the pin-free type closed shape of the present invention is obtained, and the structural schematic diagram thereof is shown in FIG. Example 39,
  • a lower buffer conductive layer 1 Au having a thickness of 2 nm and a hard magnetic layer (HFM) 2 Co having a thickness of 3 nm were sequentially deposited on a 1 mm thick Si0 2 /Si substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-supply, and then on an electron beam exposure machine, the substrate is exposed according to a desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, and the outer diameter of the long axis is 2800 nm.
  • the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin layer of 100 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the Si0 2 insulating layer is etched by a focused ion beam etching method to form a horizontal A columnar hole having an elliptical cross section, wherein the short axis of the ellipse is 300 nm, and the ratio of the minor axis to the major axis is 1:5, and then the metal material Au is deposited at the hole position by a focused ion beam assisted deposition method to form a rectangular cross section.
  • the columnar Au metal core 6 has a cross-sectional shape as described above.
  • etching is performed by using the micromachining technique in the prior art, that is, first, the position where the closed rectangular annular multilayer film is deposited is positioned on the focused ion beam device, and then the Si0 2 insulating layer is performed by the focused ion beam etching method. Etching, exposing the closed shape magnetic multilayer film buried under the insulating layer. Finally, a conductive layer Au with a thickness of 2 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming, that is, the magnetic multi-layer of the pinned type closed shape of the present invention is obtained.
  • a low-buffered conductive layer 1 Cr with a thickness of 25 nm and an antiferromagnetic pinning layer (AFM) with a thickness of lOnm were sequentially deposited on a 0.8 mm thick Si0 2 /Si substrate cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the substrate is exposed, then developed, fixed, post-baked, and then the magnetic multilayer film is engraved into a ring shape by ion etching, and finally immersed in a de-glue to remove the glue, thereby forming an annular geometric structure, and the inner diameter of the ring is 300 nm. , the outer diameter is 600nm and the width is 300nm.
  • a 50 nm thick layer is deposited on the etched annular magnetic multilayer film by conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, and the like.
  • the Si0 2 insulating layer is buryed and isolated from each other.
  • the geometric center position of the annular multilayer film is positioned on the focused ion beam device, and then the SiO 2 insulating layer is etched by a focused ion beam etching method to form a diameter of A 300 nm columnar hole is then deposited by a focused ion beam assisted deposition method at the hole location to form a Cu metal core 6 having a diameter of 300 nm.
  • the micro-machining technique in the prior art is used for etching, that is, the position where the annular multilayer film is deposited is firstly positioned on the focused ion beam device, and then the Si0 2 insulating layer is engraved by the focused ion beam etching method.
  • the etch causes the annular magnetic multilayer film buried under the insulating layer to be exposed.
  • a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being coated, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming to obtain the magnetic multilayer film of the pinned type annular metal core of the present invention. Examples 47 to 52
  • a magnetic multilayer film of a pinned type annular metal core was prepared by the micromachining method in the same manner as in Example 46, and the material and thickness of each layer of the magnetic multilayer film are shown in Table 7.
  • Table 7 Structure of a magnetic multilayer film of a pinned type annular metal-containing core prepared by a micromachining method of the present invention.
  • Example 47 48 ' 49 50
  • 51 52
  • Thickness lnm lnm lnm lnm lnm lnm lnm lnm lnm composition Co Fe CoFeB NiFeCo CoFe CoFeSiB soft magnetic layer 4 thickness 4nm 5nm 5nm 5nm 5nm 4nm
  • Thickness 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm Composition Al Au Cu Al Au Cu Conductive layer
  • a lower buffer conductive layer 1 Au having a thickness of 2 nm and an antiferromagnetic pinning layer (AFM) having a thickness of 10 nm were sequentially deposited on a 0.8 mm thick Si/SiO 2 substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • 8 IrMn a pinned magnetic layer (FM) having a thickness of 3 nm 9 Co 90 Fe 10 ; then depositing 1 nm of Al, an insulating layer formed by plasma oxidation for 50 seconds as an intermediate layer (I) 3; in the intermediate layer A soft magnetic layer (FM) 4 Co 9 having a thickness of 3 nm was deposited in this order.
  • Growth conditions of the magnetic multilayer film Preparation bottom Vacuum: 5> ⁇ 10-7 Pa; high purity argon sputtering gas pressure: 0.07 Pa; Sputtering power: 120 W; sample holder rotation rate: 20 rpm; Growth temperature: Room temperature; growth rate: 0.3 to 1.1 ⁇ /sec; growth time: film thickness/growth rate; a plane induced magnetic field of 150 Oe was applied while depositing the pinned magnetic layer 8 and the soft magnetic layer 4.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on the electron beam exposure machine according to the desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 600 nm, the outer diameter of the long axis is 900 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:1.2.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the Si0 2 insulating layer is etched by a focused ion beam etching method to form a horizontal A columnar hole having an elliptical cross section, wherein the short axis of the ellipse is 300 nm, and the ratio of the minor axis to the major axis is 1: 1.2, and then the metal material Au is deposited at the hole position by a focused ion beam assisted deposition method to form a cross section of the moment.
  • the columnar Au metal core has a cross-sectional shape as described above.
  • etching is performed by using the micromachining technique in the prior art, that is, first, the position where the closed annular multilayer film is deposited is positioned on the focused ion beam apparatus, and then the Si0 2 insulating layer is performed by the focused ion beam etching method. Etching, exposing the closed shape magnetic multilayer film buried under the insulating layer. Finally, a conductive layer Cu with a thickness of 5 nm was deposited by a ⁇ vacuum magnetron sputtering apparatus. The growth conditions were as described above, and the electrodes were processed by a conventional semiconductor micromachining process, that is, first, by gluing, pre-baking, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed to remove the glue, that is, the magnetic multilayer film of the pinned type closed shape of the present invention is obtained, and the structure diagram thereof is shown in FIG. 4 .
  • Example 54
  • a low-buffered conductive layer 1 Au having a thickness of 2 nm and an antiferromagnetic pinning layer (AFM) having a thickness of 1 nm were sequentially deposited on a 0.8 mm thick Si/SiO 2 substrate which was cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on the electron beam exposure machine according to the desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, the outer diameter of the long axis is 2800 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the Si0 2 insulating layer is etched by a focused ion beam etching method to form a horizontal A columnar hole having an elliptical cross section, wherein the short axis of the ellipse is 300 nm, and the ratio of the minor axis to the major axis is 1:5, and then the metal material Au is deposited at the hole position by a focused ion beam assisted deposition method to form a rectangular cross section.
  • the columnar Au metal core 6 has a cross-sectional shape as described above.
  • etching is performed by using the micromachining technique in the prior art, that is, the position where the closed annular multilayer film is deposited is firstly positioned on the focused ion beam device, and then the Si0 2 insulating layer is engraved by the focused ion beam etching method. The etch causes the closed-type magnetic multilayer film buried under the insulating layer to be exposed. Finally, a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus. The growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being coated, pre-baked, and then in ultraviolet light.
  • a magnetic multilayer film of a pinned closed annular metal-containing core was prepared by a micromachining method, and the materials and thicknesses of the respective layers of the magnetic multilayer film are shown in Table 8.
  • Example 55 56 57 58 59 60 Component Si/SiO 2 Si/SiO 2 SiC SiC GaAs GaAs substrate
  • Thickness 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm 5nm Composition Al Au Cu Al Au Cu Conductive layer
  • a lower buffer conductive layer 1 Ta having a thickness of 2 nm and a first hard magnetic layer (HFM) having a thickness of 3 nm are sequentially deposited on a 1 mm thick Si0 2 /Si substrate cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • a first intermediate layer 3 1 A1 2 0 3 having a thickness of 1 nm a soft magnetic layer (SFM) 4 NiFe having a thickness of 1 nm, a second intermediate layer 3 2 A1 2 0 3 having a thickness of 1 nm, and a thickness of 3 nm.
  • Growth conditions of the above magnetic multilayer film bottom vacuum: 5X10' 7 Pa; sputtering argon purity argon gas pressure - 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20 rpm ; growth temperature: room temperature; Rate: 0.3-1.1 ⁇ /sec; Growth time: film thickness/growth rate; a 150 Oe plane-inducing magnetic field was applied during deposition of the ferromagnetic layer.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on a beam exposure machine according to a desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, the outer diameter of the long axis is 2800 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the SiO 2 insulating layer is buryed and isolated from each other, and is etched by the micromachining technique of the prior art, that is, firstly, a closed annular multilayer is deposited on the focused ion beam device. The position of the film is then followed by etching the SiO 2 insulating layer by a focused ion beam etching method so that the closed-shaped magnetic multilayer film buried under the insulating layer is exposed.
  • a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being coated, pre-baked, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed to remove the glue, that is, the closed elliptical ring double intermediate layer type magnetic tunnel junction of the present invention is obtained, and the structure diagram thereof is shown in FIG. 5 .
  • Example 62
  • a lower buffer conductive layer 1 Ta having a thickness of 2 nm and a first antiferromagnetic pinning layer 81 having a thickness of lOnm are sequentially deposited on a 1 mm thick Si0 2 /Si substrate which has been conventionally cleaned by a high vacuum magnetron sputtering apparatus.
  • a first pinned magnetic layer 91 CoFeB having a thickness of 5 nm
  • a first intermediate layer 31 A1 2 0 3 having a thickness of 1 nm
  • a soft magnetic layer 4 Co having a thickness of 1 nm
  • a second intermediate layer 3 2 having a thickness of 1 nm A1 2 0 3
  • a second pinned magnetic layer CoFeB having a thickness of 5 nm
  • a second antiferromagnetic pinning layer IrMn having a thickness of 1 nm
  • a cap layer Ru having a thickness of 4 nm.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then exposed on a beam exposure machine according to a desired closed elliptical ring, and then developed, Fixing, post-baking, then engraving the magnetic multilayer film into a closed shape by ion etching, and finally immersing it with a de-gelling agent to remove the glue, that is, forming a closed elliptical ring geometry, the short-axis inner diameter of the elliptical ring is 500 nm, short The outer diameter of the shaft is 800 nm, the inner diameter of the long axis is 2500 nm, the outer diameter of the long axis is 2800 nm, and the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer, the closed annular multilayer film is buried and isolated from each other, and is etched by using the micro-technique technique in the prior art, that is, firstly, a closed ring is deposited on the focused ion beam device.
  • a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering device.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, after being glued, pre-baked, and then ultraviolet.
  • a lower buffer conductive layer 1Ta having a thickness of 2 nm and a thickness of 3 nm of the first hard magnetic layer (HFM) 21Co were sequentially deposited on a 1 mm thick Si0 2 /Si substrate which was cleaned by a conventional method using a vacuum magnetron sputtering apparatus.
  • the short-axis inner diameter of the elliptical ring is 500 nm
  • the outer diameter of the short axis is 800 nm
  • the inner diameter of the long axis is 2500 nm
  • the outer diameter of the long axis is 2800 nm
  • the ratio of the minor axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the focused ion beam etching method is used for the Si0 2
  • the edge layer is etched to form a columnar hole having an elliptical cross section, wherein the elliptical short axis is 300 nm, and the short axis to the axis ratio is 1:5, and then the metal material Au is deposited at the hole position by the focused ion beam assisted deposition method.
  • a columnar Au metal core 6 having an elliptical cross section is formed, and the cross-sectional shape is as described above.
  • etching is performed by using the micromachining technique in the prior art, that is, first, the position where the closed annular multilayer film is deposited is positioned on the focused ion beam device, and then the Si0 2 insulating layer is engraved by the focused ion beam etching method. The etch causes the closed-type magnetic multilayer film buried under the insulating layer to be exposed. Finally, a conductive layer Cu with a thickness of 5 nm is deposited by a high-vacuum magnetron sputtering apparatus.
  • the growth conditions are as described above, and the electrodes are processed by a conventional semiconductor micromachining process, that is, first, by gluing, pre-baking, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is exposed, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed to remove the glue, that is, the double-intermediate layer magnetic tunnel junction of the closed elliptical ring-shaped metal core of the present invention is obtained, and the structure diagram thereof is shown in FIG. 7 .
  • Embodiment 64
  • a lower buffer conductive layer 1 Ta having a thickness of 2 nm and a first antiferromagnetic pinning layer 81 having a thickness of 10 nm are sequentially deposited on a 1 mm thick Si0 2 /Si substrate cleaned by a conventional method using a high vacuum magnetron sputtering apparatus.
  • a first pinned magnetic layer 91 CoFeB having a thickness of 5 nm
  • a first intermediate layer 31 A1 2 0 3 having a thickness of 1 nm
  • a soft magnetic layer 4 Co having a thickness of 1 nm
  • a second intermediate layer 32 A1 having a thickness of 1 nm 2 0 3
  • a second pinned magnetic layer 92 CoFeB having a thickness of 5 nm
  • a second antiferromagnetic pinning layer 82 IrMn having a thickness of 10 nm
  • a cap layer 5 Ru having a thickness of 4 nm.
  • the deposited magnetic multilayer film adopts the micro-machining technology in the prior art, that is, first, after being glued, pre-baked, and then on an electron beam exposure machine, the substrate is exposed according to a desired closed elliptical ring, and then developed. After fixing, post-baking, and then etching the magnetic multilayer film into a closed shape by ion etching method, finally removing the glue by immersion in a de-glue, thereby forming a closed elliptical ring geometry, and the short-axis inner diameter of the elliptical ring is 500 nm.
  • the outer diameter of the short axis is 800 nm
  • the inner diameter of the long axis is 2500 nm
  • the outer diameter of the long axis is 2800 nm
  • the ratio of the short axis of the elliptical ring to the inner diameter of the long axis is 1:5.
  • a thin film of 50 nm is deposited by a conventional thin film growth means such as magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy, or the like.
  • the Si0 2 insulating layer is buried and isolated from each other.
  • the geometric center position of the closed annular multilayer film is positioned on the focused ion beam device, and then the SiO 2 insulating layer is etched by a focused ion beam etching method to form a horizontal A columnar hole having an elliptical cross section, wherein the short axis of the ellipse is 300 nm, and the ratio of the minor axis to the axis is 1:5, and then the metal material Au is deposited at the hole position by the focused ion beam assisted deposition method to form an elliptical cross section.
  • the columnar Au metal core 6 has a cross-sectional shape as described above.
  • Intraoperative micromachining technology is etched, that is, firstly, the position of the closed annular multilayer film is deposited on the focused ion beam device, and then the Si0 2 insulating layer is etched by the focused ion beam etching method to make the insulation.
  • the closed shape magnetic multilayer film buried under the layer is exposed.
  • a conductive layer Cu with a thickness of 5 nm was deposited by a ⁇ vacuum magnetron sputtering apparatus.
  • the growth conditions were as described above, and the electrodes were processed by a conventional semiconductor micromachining process, that is, first, by gluing, pre-baking, and then in ultraviolet light.
  • the photolithography plate with the pattern to be processed is used for exposure, followed by development, fixing, post-baking, and then the conductive layer on the magnetic multilayer film is patterned into four electrodes by ion etching.
  • the glue is immersed for degumming to obtain the double-intermediate layer magnetic tunnel junction of the closed elliptical ring-shaped metal core of the present invention, and the structure diagram thereof is shown in FIG. Example 65
  • the magnetic random access memory memory cell array is composed of a plurality of MRAM cells, and includes a closed elliptical annular magnetic multilayer film memory cell (RML) 65 and a transistor in one MRAM cell.
  • RML closed elliptical annular magnetic multilayer film memory cell
  • the first transition metal layer (TM) 4b the contact holes (3a, 3b), and a set of wiring, that is, a bit line (BL) 4c, a word line (WL) 62, and a ground line (GND) 4a.
  • the structure of the magnetic multilayer film in the closed elliptical annular magnetic multilayer film storage unit (RML) 65 is a lower buffer conductive layer 1 Au having a thickness of 2 nm grown on the first transition metal layer (TM) 4b, and having a thickness of 5 nm.
  • the conductive layer Au, the preparation of the closed structure is given in detail in the patent application.
  • the elliptical ring has a minor axis inner diameter of 500 nm, a short axis outer diameter of 800 nm, a long axis inner diameter of 2500 nm, and a long axis outer diameter of 2800 nm.
  • the ratio of the minor axis of the elliptical ring to the inner diameter of the major axis is 1:5.
  • the closed elliptical annular magnetic multilayer film storage unit (RML) 65 and the transistor (TR) 0 are connected to each other through the first transition metal layer (TM) 4b and the contact hole (3b).
  • the bit line (BL) 4c is disposed above the closed elliptical annular magnetic multilayer film storage unit RML (65) in a layout and directly connected to the closed magnetic multilayer film storage unit (RML) 65.
  • the entire MRAM cell is composed of a plurality of layers la, lb, lc, If, and non-functional regions in these layers are buried by an insulating buried medium such as SiO 2 or the like.
  • the metal wiring layer has only two layers in the MRAM cell, that is, a bit line (BL) 4c and a ground line (GND) 4a and a first transition metal layer (TM) 4b, and a closed magnetic multilayer film memory unit (RML) 65 is disposed in Below the bit line (BL) 4c and its upper electrode is directly connected to the bit line (BL) 4c; the lower electrode of the closed magnetic multilayer film memory cell (RML) 65 passes through the transition metal layer (TM) 4b, the contact hole (3b) Connected to the drain (Ob) of transistor (TR)0.
  • a read current having a magnitude smaller than the low threshold Ici is derived from the selected bit line (BL) 4c, and the read current is passed from the bit line BL1 (4c) via the closed magnetic 'multilayer film.
  • Memory cell (RML) 65 First transition metal layer (TM) 4b, contact hole (3b), drain (0b) of transistor (TR) 0, source (0a) of transistor TR(0), contact hole ( 3a) to reach the ground line GND (4a;), thereby obtaining a closed magnetic "multilayer film memory cell (RML) 65 bit layer (soft magnetic layer or soft magnetic layer) current magnetization state, that is, stored in the MRAM cell Data; in the address write operation of the MRAM, an appropriate level is first given by the selected word line (WL) 62 to cause the transistor (TR) 0 to operate in an on state and then by the selected bit line ( BL) 4c derives a write current whose magnitude is greater than the low threshold Ici and less than the high threshold I C2 , due to the effect of the spin torque effect, the closed magnetic multilayer film storage unit (RML) The magnetization state of 65 will be determined by the direction of the write current, so when the write current is contacted by the bit line (BL) 4c via the closed magnetic multilayer film memory cell (R
  • the magnetic random access memory cell array is composed of a plurality of MRAM cells, and in one MRAM cell, a closed elliptical annular magnetic multilayer film storage unit 65 is disposed in the closed elliptical ring.
  • the closed elliptical annular magnetic multilayer film storage unit 65 and the transistor 0 are connected to each other through the first transition metal layer 4b and the contact hole 3b.
  • the bit line second bit line 4d is disposed above the closed elliptical annular magnetic multilayer film storage unit 65 on the layout and directly connected to the closed elliptical annular magnetic multilayer film storage unit, and the first bit line 4e is disposed at the The upper portion of the bit line 4d is parallel to the second bit line 4d, and is separated by an insulating layer le.
  • the structure of the magnetic multilayer film in the closed elliptical annular magnetic multilayer film storage unit 65 is a lower buffer conductive layer 1Cr having a thickness of 10 nm grown on the first transition metal layer 4b, and an antiferromagnetic pinning layer having a thickness of 10 nm.
  • the elliptical ring has a short axis inner diameter of 500 nm, a short axis outer diameter of 800 nm, a long axis inner diameter of 2500 nm, a long axis outer diameter of 2800 nm, and a ratio of the minor axis of the elliptical ring to the inner diameter of the long axis. It is 1:5.
  • the metal core 6 disposed at the geometric center of the closed magnetic multilayer film storage unit 65 is an Au metal core having an elliptical cross section, the elliptical short axis is 300 nm, and the width ratio of the short side to the long side is 1:5.
  • the entire MRAM cell is composed of a plurality of layers la, lb, lc, le, If, and non-functional regions in these layers are buried by an insulating buried medium such as SiO 2 or the like.
  • the metal wiring layer has only three layers in the MRAM cell, that is, the first bit line 4e, the second bit line 4d, and the ground line GND4a and the first transition metal layer 4b, and the closed magnetic multilayer film storage unit 65 is disposed on the second bit line.
  • the lower electrode of the closed magnetic multilayer film storage unit 65 is connected to the drain Ob of the transistor 0 through the first transition metal layer 4b, the contact hole 3b;
  • the metal core 6 of the geometric center of the closed magnetic multilayer film storage unit 65 is directly connected to the first bit line 4e at the top and the first transition metal layer 4b at the bottom.
  • the low-resistance and high-resistance states (that is, the two states of high output voltage and low output voltage), that is, the MRAM write operation can be realized by controlling the direction of the current.
  • the write current is from the first bit line 4e to the ground line 4a via the metal core 6, the first transition metal layer 4b, the contact hole 3b, the source 0b of the transistor 0, the drain 0a of the transistor 0, and the contact hole (3a).
  • the magnetization state of the bit layer (soft magnetic layer 4) of the closed magnetic multilayer film storage unit 65 is also written by the write current, thus completing the writing of data in the MRAM cell.
  • the magnetic random access memory cell array is composed of a plurality of MRAM cells, and in one MRAM cell, a closed elliptical annular magnetic multilayer film storage unit 65 is disposed in the closed elliptical ring.
  • a metal core 6 of a geometric center of the magnetic multilayer film storage unit 65 a transistor 0, a first transition metal layer 4b, a ground line 4a, contact holes (3a, 3b, 3b2), and a set of wiring, that is, a bit line 4c, The word line 63, the first word line 67, and the ground line 4a.
  • the closed elliptical annular magnetic multilayer film storage unit 65 and the transistor 0 are connected to each other through the first transition metal layer 4b and the contact hole 3b. Arranging the bit line 4e on the closed elliptical annular magnetic multilayer film storage unit on the layout Above 65 and directly connected to the closed elliptical annular magnetic multilayer film storage unit 65.
  • the structure of the magnetic multilayer film in the closed elliptical annular magnetic multilayer film storage unit 65 is a lower buffer conductive layer 1Ta having a thickness of 2 nm sequentially deposited on the second transition metal layer 4f, and an antiferromagnetic nail having a thickness of 5 nm.
  • the metal core 6 disposed at the geometric center of the closed elliptical annular magnetic multilayer film storage unit 65 is an Au metal core 6 having an elliptical cross section, the elliptical short axis is 500 nm, and the width ratio of the short side to the long side is 1:5.
  • the entire MRAM cell is composed of a plurality of layers la, lb, lc, ld, If, and non-functional regions in these layers are buried by an insulating buried medium such as SiO 2 or the like.
  • the closed magnetic multilayer film storage unit 65 is disposed under the bit line 4c and its upper electrode and bit The wire 4c is directly connected; the lower electrode of the closed magnetic multilayer film storage unit 65 is connected to the first drain Obi of the transistor 0 through the first transition metal layer 4b, the contact hole 3b, and the contact hole 3d; The metal core 6 of the geometric center of the film storage unit 65 is directly connected to the top bit line 4c and the bottom second transition metal layer 4f; the transistor 0 is composed of two working areas, and the two working areas share the same drain 0al, The sources of the first transistor and the second transistor are Obi and 0b2, respectively, and the respective operating states of the two transistors are controlled by the levels given by the first word line 67 and the second word line 63 disposed above the gate, respectively. .
  • the appropriate first level is given by the selected first word line 67 to operate the first transistor of the transistor 0.
  • the cross-sectional area of the layer film the read current is from the bit line 4c via the closed magnetic multilayer film storage unit 65, the second transition metal layer 4f, the contact hole 3b, the first transition metal layer 4b, the contact hole 3b, and the transistor 0.
  • the magnetization state of the bit layer (soft magnetic layer 4) of the closed magnetic multilayer film storage unit 65 is oriented in the clockwise or counterclockwise direction so that the magnetization states of the bit layer (soft magnetic layer 4)
  • the ground line is reached.
  • the magnetization state of the bit layer (soft magnetic layer 4) of the closed magnetic multilayer film storage unit 65 is also written by the write current, thus completing the writing of data in the MRAM cell.
  • the ring shape may also be a square ring, a rectangular ring, a triangular ring, a hexagonal ring, or a pentagonal ring.
  • the magnetic multilayer film in this embodiment may also be other as described above. structure.
  • the size of the ring, the diameter of the core, and the material of the ring are all patented, and will not be repeated here.

Description

包含和非包含金属芯的闭合形状磁性多层膜及它们的制备方法和用途 技术领域
本发明涉及一种闭合形状的磁性多层膜、 一种含金属芯的闭合形状的磁性多层膜、 及它们的制备方法， 和基于这些闭合形状磁性多层膜的磁性随机存取存储器 (MRAM)及 其控制方法。 背景技术
自 20世纪 80年代末期 Baibich等人在磁性多层膜系统中首次观察到巨磁电阻效应 (Giant Magneto Resistance, GMR)以来， 磁性多层膜体系的研究一直是科研人员普遍关 注的一个课题。 由于 GMR效应具有很高的磁电阻比值， 因此可以广泛应用到磁电阻型 传感器、 磁记录读出磁头等领域。 用 GMR制成的器件不仅具有灵敏度高、 体积小、 功 耗低等优良特点，还可以带来抗辐射、非易失性信息存储等许多新特性。特别是将 GMR 效应用于磁记录读出磁头则给整个信息记录领域带来了一场深刻的革命，并对相关产业 产生了直接而深远的影响。 1994年 IBM公司利用 GMR效应成功研制出硬磁盘读出磁 头， 将磁盘存储系统的记录密度提高了近 20 , 使计算机产业取得了突破性进展； 基 于 GMR效应制成的各类传感器件则由于输出信号增强而使得器件设计大为简化， 这直 接导致了器件的小型化与廉价化。
继 GMR效应发现之后， 1995年日本科学家 T. Miyazaki和美国科学家 J. S. Moodera 在磁性隧道结 (MTJ)中分别独立获得了室温下 18%和 10%的隧道磁电阻 (Tunneling Magneto Resistance, TMR)比值，从而掀起了磁性隧道结的研究髙潮。研究人员基于 GMR 效应以及磁性隧道结而设计了一种新型磁性随机存取存储器 (Magnetic Random Access Memory, MRAM)的器件模型， 这种器件由于采用了全新的设计而具有许多激动人心的 新特性， 诸如抗辐射、 非易失性信息存储等。 典型的 MRAM器件设计其核心部分结构 由四部分构成： 位线 (Bit Line)、 写字线 (Word Line), 读字线 (Read Line)和存储单元。 位 线和写字线， 读字线分别位于存储单元的上方和下方， 呈纵横交叉排列， 存储单元则位 于位线和字线的交叉处。 MRAM存储单元的写操作过程则是通过流经字线和位线的两 个脉冲电流共同产生的合成磁场驱动比特层 (层)磁矩反转来完成， 因此这种工作方式明 显依赖于字线和位线两个脉冲电流所产生的磁场这样一个中间环节来操控存储单元的 磁化状态， 导致其结构和工艺制备过程十分复杂， 给 MRAM器件的加工和集成带来了 极大的不便和较髙成本。
1996年， 美国科学家 J. Slonczewski从理论上预言了一种新的物理机制一自旋转矩 (Spin Torque, ST)效应， 这种物理机制可以利用电流自身实现对存储单元磁化状态的操 控，当存储单元中流过的电流小于某个特定的临界值 Jc时，存储单元磁化状态不会被存 储单元中流过的电流所改变， 从而可以实现读操作； 而当存储单元中流过的电流大于这 个临界值/ C时，存储单元磁化状态将由存储单元中流过的电流的方向所决定，从而可以 实现写操作。在随后的十几年中，科学家们对这种新效应进行了大量广泛而深入的研究。 如果将这种新机制应用到磁性多层膜系统以及 MRAM等器件中， 则能够极大地简化器 件结构和加工工艺， 这将为信息存储领域带来又一次革命性的突破。
然而由于现有技术中使用的存储单元一如比特层 (软磁层)和其它被钉扎磁性层 (或 硬磁层）一的几何结构均采用非闭合结构， 如矩形、 椭圆形等， 这种结构在高密度小尺 寸存储单元下将会带来较大的退磁场和形状各向异性， 这种缺陷无疑会增大比特层（软 磁层）的反转场（矫顽力）和功耗， 同时在高密度状态下磁存储单元之间的磁耦合和相 互干扰不可避免，对存储单元的磁电性能的均匀性和一致性也带来许多不利的影响和磁 噪声, 并且给存储单元的设计和制备带来诸多结构上和工艺过程中的复杂性。 目前为减 小退磁场，作为存储单元的磁性隧道结其上下磁电极一般大都采用三明治式人工钉扎复 合型的比特层和底部钉扎层 （如： Co-Fe Ru/Co-Fe-B和 Py/Ru/Co-Fe-B)。 但其比特层 的反转场和功耗仍然没有降低到一个理想和期望的最低值。为了克服这些问题， 必须采 用新的几何结构和器件设计原理来消除磁性多层膜经过微加工和纳米加工小尺寸图型 化后存储单元自身产生的退磁场， 并进一步减小存储单元比特层的形状各向异性。 发明内容
本发明的目的在于克服现有的磁性多层膜系统物理结构上的缺陷，通过改变多层膜 系统的几何结构， 提供一种无退磁场和弱形状各向异性的闭合形状的磁性多层膜。
本发明的另一目的在于克服现有的磁性多层膜系统物理结构上的缺陷，通过改变多 层膜系统的几何结构，提供一种无退磁场和弱形状各向异性的含金属芯的闭合形状的磁 性多层膜。
本发明的再一目的在于提供上述闭合形状的磁性多层膜和含金属芯的闭合形状的 磁性多层膜的制备方法。
本发明的还一目的在于克服现有的磁性随机存取存储器使用非闭合结构的磁性多 层膜作为存储单元时， 由于非闭合结构存储单元的退磁场和形状各向异性的影响 以及 在高密度状态下磁存储单元之间存在磁耦合和相互干扰， 使得 MRAM在写和读操作方 法上产生的一些技术困难和缺陷，从而提供一种基于上述闭合形状的磁性多层膜和含金 属芯的闭合形状的磁性多层膜、可以消除存储单元的退磁场、减弱其形状各向异性以及 磁相互作用和干扰的磁随机存取存储器， 及其控制方法。
本发明的目的是通过如下的技术方案实现的：
本发明提供的具有几何形状的磁性多层膜，包括沉积在衬底上的常规的磁性多层膜 的各层，所述的磁性多层膜经过微加工图型化后，每一个磁性多层膜单元呈闭合的环形， 该环形包括圆环形和椭圆环形，因此其磁性单元中每一层铁磁性薄膜的磁矩或磁通量可 以形成顺时针或逆时针的闭合状态。 优选的， 圆环形的内径为 10〜100000nm， 外径为 20〜200000nm，环宽在 10〜100000nm之间。优选的，椭圆内环的短轴为 10〜100000nm， 短轴与长轴的比值为 1： 1.1〜5，椭圆外环的短轴为 20〜200000nm，环宽在 10〜 lOOOOOnm 之间。
本发明提供的含金属芯的闭合形状的磁性多层膜，是在上述闭合形状的磁性多层膜 的几何中心位置还包括一个金属芯， 该金属芯的横截面相应地为圆形或椭圆形， 其中圆 环形金属芯的半径为 5〜50000nm，椭圆形金属芯的的短轴为 5〜50000nm，椭圆形的短 轴与长轴比值为 1 : 1.1〜5。 金属芯的形状与闭合形状的磁性多层膜的形状相匹配， 即 若磁性多层膜图型化后的形状为圆环则金属芯亦为圆环形，若磁性多层膜图型化后的形 状为椭圆环则金属芯为椭圆形。
所述的金属芯的材料为电阻率较小的金属材料， 优选 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al或 Si-Al合金等， '如 SiAl合金等； 该金属芯的作用是从外部施加电流， 通过电 流产生的环形磁场操控磁性多层膜图型化后的存储单元的磁化状态，从而可以更方便的 进行磁性多层膜存储单元的读写操作， 同时可以避免较大的脉冲写电流反复写操作时对 势垒层可能产生的损伤 '（电流迁移原子效应）。 - 在本发明的技术方案中，所述的闭合形状的磁性多层膜和含金属芯的闭合形状的磁 性多层膜， 按照形成的材料分类， 包括无钉扎型的、 钉扎型的和双中间层型的。
对于无钉扎型闭合形状的磁性多层膜，如图 1和图 3所示，其依次为缓冲导电层 (以 下简称 SL) 1、硬磁层 (以下简称 HFM) 2、中间层 (以下简称 1) 3、软磁层 (以下简称 SFM) 4及覆盖层 (以下简称 CL) 5。
对于钉扎型闭合形状的磁性多层膜， 如图 2和图 4所示， 其依次为缓冲导电层 (以 下简称 SL) 1、 反铁磁钉扎层 (以下简称 AFM) 8、 被钉扎磁性层 (以下简称 FM) 9、 中间 层 (以下简称 I) 3、 软磁层 (以下简称 FM) 4及覆盖层 (以下简称 CL) 5。
对于无钉扎型闭合环状的双中间层磁性多层膜， 如图 5和图 7所示， 其依次为缓冲 导电层 (以下简称 SL) 1、第一硬磁层 (以下简称 HFM1) 21、第一中间层 (以下简称 II) 31、 软磁层 (以下简称 SFM) 4、第二中间层 (以下简称 12) 32、第二硬磁层 (以下简称 HFM2) 22、 及覆盖层 (以下简称 CL) 5。
对于钉扎型闭合环状的双中间层磁性多层膜， 如图 6和图 8所示， 其依次为缓冲导 电层 (以下简称 SL) 1、第一反铁磁钉扎层 (以下简称 AFM1) 81、第一被钉扎磁性层 (以下 简称 FM1) 91、第一中间层 (以下简称 11) 31、软磁层 (以下简称 FM) 4、第二中间层 (以下 简称 12) 32、第二被钉扎磁性层 (以下简称 FM2) 92、第二反铁磁钉扎层 (以下简称 AFM2) 82及覆盖层 (以下简称 CL) 5。 .
在本发明的技术方案中- 所述的衬底为常规衬底， 如 Si、 Si/Si02、 SiC、 SiN或 GaAs衬底等， 厚度为 0.3〜lmm; 所述的下部缓冲导电层 SL由金属材料组成， 优选 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al或 Si-Al合金等， 厚度为 2〜200nm;
所述的硬磁层 HFM、 第一硬磁层和第二硬磁层由巨磁电阻效应大的材料， 如 Co, Fe， Ni, CoFe, NiFeCo, CoFeB, CoFeSiB等组成， 厚度为 2〜20 nm;
所述的中间层 I、 第一中间层和第二中间层均由非磁性金属层或者绝缘体势垒层构 成， 其中非磁性金属层的材料如 Ti, Zn， ZnMn, Cr， Ru， Cu, V或 TiC， 绝缘体势垒 层的材料如 A1203， MgO， TiO, ZnO, (ZnMn)0, CrO, VO, 或 TiCO， 中间层的厚度 为 0.5〜10nm;
所述的软磁层 SFM的组成材料为自旋极化率髙， 矫顽力较小的铁磁材料， 包括 - Co, Fe， Ni或它们的金属合金 NiFe， CoFeSiB, NiFeSiB,或非晶 CoiQQ-x-yFexBy(0<x<100， 0<y < 20)，或 Heusler合金，如 Co2MnSi, Co2Cr0.6Fe0.4Al;软磁层的组成材料优选 Co90Fe10， Co75Fe25, Co4oFe40B20, 或 Ni79Fe21 ; 所述的软磁层的厚度为 l〜20nm;
所述的覆盖层 CL由不易被氧化的且具有较大电阻的金属材料组成， 优选 Ta、 Οι、 Ru、 Pt、 Ag、 Au、 Cr等或其合金， 厚度为 2〜20 nm， 用于保护材料不被氧化。
所述的反铁磁钉扎层 AFM、 第一反铁磁钉扎层和第二反铁磁钉扎层均由具有反铁 磁性的合金组成， 优选 IrMn, FeMn, PtMn, CrMn或 Pt (Cr, Mn)合金， 厚度为 3〜 30 mil;
所述的被钉扎磁性层 FM、 第一被钉扎磁性层和第二被钉扎磁性层的组成材料为具 有较高自旋极化率的铁磁性金属， 如 Fe、 Co、 Ni及其合金， 优选 CoFe合金， NiFe合 金， 非晶 CoFeB合金， CoFeSiB合金等， 厚度为 2〜20 nm;
本发明提供一种利用微加工方法制备所述的闭合形状的磁性多层膜的方法，包括如 下的步骤：
1 )选择一个衬底，经过常规方法清洗之后，在常规的薄膜生长设备 (例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等)上沉积下部缓冲导电层 （该 下部缓冲导电层在后续加工时成为导电电极)；
2)利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉沖激光沉积、 电化 学沉积、分子束外延等，在下部缓冲导电层上依次沉积本发明的无钉扎式的磁性多层膜 的硬磁层 HFM、 中间层 11、 '软磁层 SFM以及覆盖层； 在沉积硬磁层和软磁层时， 可以 选择施加 50〜5000 Oe的平面诱导磁场；
或是利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化 学沉积、分子束外延等，在下部缓冲导电层上依次沉积本发明的钉扎式的磁性多层膜的 反铁磁钉扎层 AFM、被钉扎磁性层 FM1、 中间层 12、软磁层 SFM以及覆盖层； 沉积反 铁磁钉扎层、 被钉扎磁性层和软磁层时， 可以选择施加 50〜5000 Oe的平面诱导磁场； 或是利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化 学沉积、分子束外延等，在下部缓冲导电层上依次沉积本发明的双中间层磁性多层膜的 第一反铁磁钉扎层 AFM1、 第一被钉扎磁性层 FM1、第一中间层 Π、 软磁层 SFM、 第 二中间层 12、 第二被钉扎磁性层 FM2、 第二反铁磁钉扎层 AFM2及覆盖层； 沉积反铁 磁钉扎层、 被钉扎磁性层和软磁层时， 可以选择施加 50〜5000 Oe的平面诱导磁场；
3)釆用微加工工艺和方法将步骤 2)中沉积了磁性多层膜的衬底加工成闭合形圆环 或者椭圆环状结构； 所述的微加工工艺的具体步骤为： 首先经过涂胶、 tm, 再在在紫 外、 深紫外曝光或电子束曝光机上， 根据所需的闭合状图形 (包括圆环和椭圆环)对片基 迸行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶；
必要时还可以利用反应离子刻蚀机进行辅助去胶；
4)在步骤 3)得到的刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长 手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积 一层绝缘层将各闭合环状多层膜进行掩埋并且相互隔离不同的单元；
所述的绝缘层为常规的绝缘体材料， 优选 Si02， AI2O3, ZnO, TiO, SnO或有机分 子材料 (如聚氯乙烯 PVC， 聚乙烯 PE， 聚丙烯 PP等)， 厚度为 100〜1000nm;
5)利用微加工工艺的紫外、 深紫外曝光或电子束曝光方法， 以及聚焦离子束刻蚀 或者化学反应干刻或化学反应湿刻，在沉积有闭合环状多层膜的位置上对绝缘层进行刻 蚀使绝缘层下掩埋的磁性多层膜暴露， 得到本发明的闭合形状的磁性多层膜；
对于含金属芯的闭合形状的磁性多层膜的制备方法，在上述闭合形状的磁性多层膜 的制备方法的步骤 4)和步骤 5)之间， 包括步骤 4'):
4') 利用微加工工艺， 在闭合环状多层膜的几何中心位置制备一个金属芯， 该金 属芯的横截面为圆环形或椭圆形， 其中， 圆环形金属芯的半径或者椭圆形金属芯的短轴 为 5〜50000nm， 短轴 a与长轴 b的比值可以为 a： b = 1:1〜1:5之间， 金属芯的形状与 闭合形状的磁性多层膜的形状相匹配，即若磁性多层膜图型化后的形状为圆环则金属芯 亦为圆环形， 若磁性多层膜图型化后的形状为椭圆环则金属芯为椭圆形。
所述的微加工工艺包括： 首先定位到闭合环状多层膜的几何中心位置， 接着利用聚 焦离子束刻蚀、 紫外、深紫外曝光、 电子束曝光、 学反应刻蚀等微加工方法对绝缘层 进行刻蚀， 形成水平横截面为圆环形或椭圆形的柱状孔洞， 之后利用电化学沉积方法、 磁控溅射、 聚焦离子束辅助沉积等方法在孔洞位置沉积金属材料， 形成金属芯；
所述的金属芯的材料为电阻率较小的金属材料， 优选 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al或 Si-Al合金等， 如 SiAl合金等。
使用时， 上述方法得到的磁性多层膜进一步加工， 引出电极， 具体歩骤如下-
6)利用常规的薄膜生长手段， 例如磁控滅射、 电子束蒸发、 脉冲激光沉积、 电化 学沉积、 分子束外延等， 沉积一层导电层；
所述的导电层为电阻率较小的金属， 优选 Au、 Ag、 Pt、 Cu、 Al、 SiAl等或其金属 合 ， 厚度为 2〜200nm; 7)利用常规的半导体微加工工艺， 将导电层加工成电极， 每个闭合环状结构引出 四个电极， 即得到含有本发明的磁性多层膜的元器件；
所述的常规半导体微加工工艺包括： 首先经过涂胶、 前烘， 再在紫外、 深紫外曝光 机或电子束曝光机上，利用带有待加工图案的光刻版进行曝光， 接着显影、定影、后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状，最后用去胶剂等浸 泡进行去胶。
本发明的闭合含（或不含）金属芯形状的磁性多层膜能够广泛应用于以磁性多层膜 为核心的各种器件， 例如， 磁性随机存取存储器， 计算机磁读头， 磁敏传感器， 磁逻辑 器件和自旋晶体管等。
本发明提供一种基于闭合状磁性多层膜的磁性随机存取存储器，其使用上述闭合形 状的磁性多层膜和含金属芯的闭合形状的磁性多层膜作为存储单元。
本发明提供的基于闭合状磁性多层膜的磁性随机存取存储器包括以下几种类型：
1.本发明提供一种基于闭合状磁性多层膜的磁性随机存取存储器， 如图 9A、 9B 和图 9C所示， 包括：
晶体管 TR单元 0(包括晶体管的源极 0b、 漏极 0a和轻掺杂区域 0c)构成的存储器 读写控制单元阵列， 该读写控制单元阵列集成在半导体衬底中；
闭合状磁性多层膜存储单元 (RML)构成的存储单元 65及其阵列， 其中存储单元 65 的几何结构为闭合状磁性多层膜;所述的闭合状含金属芯磁性多层膜包括非钉扎式和钉 扎式两类， 其特征如前所述。
连接上述晶体管单元 0和闭合状磁性多层膜存储单元 65的过渡金属层 (4a、 4b); 以及字线 62、 位线 4c、 地线 4a， 所述的字线同时也是所述的晶体管 0的栅极， 所述的 位线 BL布置在所述的闭合状磁性多层膜存储单元 65的上方， 并与所述的字线 WL相 互垂直， 而且与所述的闭合状磁性多层膜存储单元 RML直接连接。
其中所述晶体管单元 0的源极和第一漏极上分别设置第一接触导电孔 3a、 第二接 触导电孔 3b， 第一接触导电孔 3a上设置地线 4a， 第二接触导电孔 3b上设置第一过渡 金属层 4b; 第一过渡金属层 4b与磁性多层膜存储单元 65的下端连接； 所述的字线 62 同时也是所述的晶体管 0的栅极；所述的位线 4c布置在所述的磁性多层膜存储单元 65 的上方， 与所述的字线 62相互垂直， 并且与所述的磁性多层膜存储单元 65直接连接； la、 lb和 lc是绝缘隔离材料。 并且在所述的位线 4c上覆盖一层绝缘钝化层 lf。
在此技术方案中， 所述的磁性多层膜存储单元 65的形状为中间空心的带有宽度的 圆环或者椭圆环；所述的圆环的内径 10〜100000nm、圆环的外径 20〜200000nm; 所述 的椭圆环内环的短轴为 a=10〜100000nm， 短轴与长轴的比值为 a:b=l : 1〜5， 椭圆外 环的短轴为 20〜200000nm， 圆环和椭圆环的宽度为 20〜200000nm;所述的闭合状含金 属芯磁性多层膜包括非钉扎式和钉扎式两类， 其特征如前所述。
根据背景技术中介绍过的自旋转力矩效应和电流产生的闭合状磁场效应，本发明提 供一种上述基于闭合状磁性多层膜的磁性随机存取存储器的控制方法，其为通过流经存 储单元 RML中的电流的大小和方向来实现 MRAM的读操作和写操作， 具体如下： 当闭合状磁性多层膜存储单元 RML中的电流小于一个特定的低临界值 /α (：相应电 流密度 Jc尸 10〜102A/cm2，电流 =电流密度 X闭合状磁性多层膜截面积)时，其比特层（软 磁层或软磁层） 的磁化状态不会受到改变， 从而实现 MRAM的读操作；
当闭合状磁性多层膜存储单元 RML中的电流大于这个低临界值 /c/并且小于高临 界值 /C 相应电流密度 J =102〜106A/cm2，电流 =电流密度 X闭合状磁性多层膜截面积) 时， 电流的方向将会改变闭合状磁性多层膜存储单元比特层（软磁层）的磁化状态， 通 过正向和负向自旋极化隧穿电流（即通过极化隧穿电流诱导的环行磁场的驱动作用和自 旋转力矩的联合作用）， 实现其比特层 （软磁层） 的磁化状态沿顺时针或逆时针方向取 向， 使得比特层 (软磁层)与被钉扎磁性层 (参考层或硬磁层)的磁化状态分别沿顺时针或 逆时针方向相同或相反（即磁化强度平行或反平行）反转取向， 从而获得低电阻和高电 阻两种状态 （即获得高输出电压和低输出电压两种状态)， 也就是通过控制电流的大小 和方向就可以实现 MRAM的写操作；
如果写电流超过高临界电流值 IC2 (即大于该临界电流后）， 被钉扎磁性层 (或硬磁 层)的原来沿顺时针或逆时针取向的磁化状态将被反转， 即会导致比特层（软磁层）和 被钉扎磁性层 (或硬磁层)一起被反转从而产生相同的磁化强度取向， 所以写电流必须小 于高临界电流值 /C2。即读电流要小于低临界电流值 /c/，写电流必须大于低临界电流 / 而小于高临界电流 /c
2.本发明提供另一种基于闭合状含金属芯的磁性多层膜的磁性随机存取存储器， 如图 10A、 10B和 10C所示， 包括：
晶体管 TR单元 0(包括晶体管的源极 0b、 漏极 0a和轻掺杂区域 0c)构成的存储器 读写控制单元阵列， 该读写控制单元阵列集成在半导体衬底中；
闭合状含金属芯的磁性多层膜存储单元构成的存储单元 65及其阵列， 其中存储单 元的几何结构为闭合状含金属芯磁性多层膜；所述的闭合状含金属芯磁性多层膜包括非 钉扎式和钉扎式两类， 其特征如前所述。
连接上述晶体管 TR单元和闭合状含金属芯的磁性多层膜存储单元 RML的过渡金 属层 4b;
以及字线 62、第一位线 4e和第二位线 4d，所述的字线 WL同时也是所述的晶体管 0的栅极， 所述的两条位线 4e和 4d布置在所述的闭合状含金属芯的磁性多层膜存储单 元 RML的上方， 第一位线 4e与所述的字线 WL相互垂直， 并且与所述的闭合状含金 属芯的磁性多层膜存储单元 RML直接连接， 第二位线 4 d与所述的闭合状含金属芯的 磁性多层膜存储单元 RML中的金属芯直接相连， 并且由一层绝缘层与第一位线 4e相 互隔离。 la、 lb、 lc、 le和 If是绝缘隔离材料。
本发明提供上述基于闭合状含金属芯的磁性多层膜的磁性随机存取存储器的存取 存储方法，其为通过对存储单元 RML中的金属芯施加的电流来实现 MRAM的写操作， 通过对存储单元 RML中的闭合状磁性多层膜施加的隧穿电流来实现 MRAM的读操作， 具体如下- 在闭合状含金属芯的磁性多层膜存储单元 RML的磁性多层膜中的施加的电流小于 一个特定的低临界值 /c; (相应电流密度 Jc产 10〜102A/cm2， 电流 =电流密度 X闭合状磁 性多层膜截面积)时， 其比特层（软磁层） 的磁化状态不会受到改变， 从而实现 MRAM 的读操作；
在闭合状含金属芯磁性多层膜存储单元 RML中的金属芯中施加电流， 由于电流产 生的磁场呈环状分布，因此可以方便的控制闭合状磁性多层膜的磁化状态，具体方法为： 当闭合状含金属芯磁性多层膜存储单元 RML中的金属芯中施加电流大于低临界值 Ici 并且小于高临界值 /C2(相应电流密度 JC2=\ 02〜 106A/cm2， 电流 =电流密度 X金属芯截面 积)时， 电流的方向将会改变闭合状磁性多层膜存储单元 RML比特层（软磁层）的磁化 状态，通过正向和负向的驱动电流产生顺时针或逆时针方向的磁场， 实现其比特层（软 磁层）的磁化状态沿顺时针或逆时针方向取向，使得比特层 (软磁层)与被钉扎磁性层 (参 考层或硬磁层)'的磁化状态分别沿顺时针或逆时针方向相同或相反 （即磁化强度平行或 反平行）， 从而获得低电阻和高电阻两种状态（即获得高输出电压和低输出电压两种状 态）， 也就是通过控制电流的方向就可以实现 MRAM的写操作。
如果写电流超过髙临界电流值 IC2 (即大于该临界电流后）， 被钉扎磁性层 (或硬磁 层)原来沿顺时针或逆时针取向的磁化状态将被反转， 即会导致比特层 （软磁层）和被 钉扎磁性层 (参考层或硬磁层)一起被反转从而产生相同的磁化强度取向， 所以写电流必 须小于髙临界电流值 JC2。 即读电流要小于低临界电流 /C7， 写电流必须大于低临界电流 /c /而小于高临界电流 /Ω。
3.本发明提供另一种读和写过程分别各用一个晶体管控制的基于闭合状含金属芯 的磁性多层膜的磁性随机存取存储器， 如图 11A、 11B和 11C所示， 包括：
所述的第一和第二晶体管 TR单元 0(包括第一和第二晶体管的源极 Obi和 0b2、 共 用的漏极 0a l、轻掺杂区域 0c)构成的存储器读写控制单元阵列， 该读写控制单元阵列 集成在半导体衬底中；第一晶体管开关控制读操作，第三晶体管开关控制写操作。第一 晶体管的栅极 67也作为第一字线 67 (共用)， 第二晶体管的栅极 63也作为第二字线 63 (共用)； ■
所述的晶体管共用漏极 Oa l、第一晶体管的源极 0bl、第二晶体管的源极 0b2之上 分别设置第一导电接触孔 3a、 第二导电接触孔 3b、 第三导电接触孔 3b2， 并且分别与 及其上的第一过渡金属层 4a和 4b连接； 第一接触孔 3a之上的过渡金属层 4a也同时 构成所设置的地线 4a;第四导电接触孔 3d和第二过渡金属层 4f相连；该第二过渡金属 层 4f作为底部传导电极与所述的圆环形或椭圆环形磁性多层膜存储单元 65的下端相 连，该圆环或椭圆环形的磁性多层膜存储单元 65的上端设置位线 4c并与之相连；所述 的设置在圆环或者椭圆环形的磁性多层膜存储单元 65中心处的圆形或者椭圆形金属芯 上端与位线 4c接触， 下端与第一过渡金属层 4b连接； 第五绝缘钝化层 If 覆盖在位线 4c上。
所述的闭合状含金属芯的磁性多层膜存储单元 RML构成的存储单元 65及其阵列， 其中存储单元的几何结构为闭合状含金属芯磁性多层膜；所述的闭合状含金属芯磁性多 层膜包括非钉扎式和钉扎式两类， 其特征如前所述。
本发明提供的闭合含（或不含）金属芯形状的磁性多层膜， 使用微加工方法制备的 闭合环状结构， 来代替常规的磁性多层膜。 在现有技术使用常规的非闭合环状结构时， 由于常规结构带来的退磁场和形状各向异性的影响， 使磁性多层膜的磁化状态不易改 变，在器件应用上必须依赖外部施加的较大磁场或者由较大脉冲电流产生的合成磁场来 操控其磁化状态， 功耗大、 成本高， 并给器件的加工、 集成和使用带来许多不利因素， 如噪声和近邻单元间的磁耦合和磁干扰以及热效应和散热问题等，并且对器件的性能产 生不良的影响。而本发明通过改变磁性多层膜的几何结构， 可以克服上述缺陷， 提高磁 性多层膜的性能， 使其在保持磁性多层膜原有特征和性能的情况下， 还具有无退磁场和 最小磁各向异性， 磁化状态易于改变并且可由电流直接操控等优点， 避免了使用外磁场 或者由较大脉冲电流产生的合成磁场来操控磁化状态所带来的结构和工艺上的复杂性， 能够满足大规模产品化的要求， 即本发明的闭合含（或不含）金属芯形状的磁性多层膜 更适合于器件化的磁性随机存取存储器、 新型磁性多层膜传感器的制备。
在现有技术中 MRAM的数据写操作是依靠写字线和位线所产生的磁场的共同作用 来操控存储单元比特层的磁化状态，因此在工艺结构上需要有两个金属布线层分别布置 写字线和位线。而与现有技术相比， 本发明提供的基于闭合状磁性多层膜的磁性随机存 取存储器，通过采用新的环状的磁性多层膜几何结构作为存储单元， 利用正负两个方向 的极化隧穿电流自身产生的环行磁场或者金属芯中正负两个方向的驱动电流产生的环 形磁场，并结合自旋转力矩效应， 进行数据的读写操作， 使得 MRAM的控制更加简便： 利用自选转力矩效应使得数据的读、 写操作由一条 ¾线来完成； 利用金属芯中电流产生 的环形磁场驱动闭合状磁性多层膜的比特层磁化状态，驱动磁场空间分布与存储单元的 几何形状匹配较好， 因此使得器件的驱动更加容易。这些特点使得本发明的基于闭合状 磁性多层膜的磁性随机存取存储器避免了由于磁场空间分布不均勾而带来的不利影响， 有利于器件工作性能的稳定和器件寿命的延长； 同时由于本发明的基于闭合状磁性多层 膜的磁性随机存取存储器去除了现有技术中专门用于写操作的一条写字线，大大降低了 传统 MRAM结构的复杂性、制造工艺的难度及成本，并克服了现有技术中存在的缺点， 提髙了 MRAM的应用价值。 附图说明
图 1是本发明的无钉扎型、单势垒的闭合椭圆环状的磁性多层膜的结构示意图； 图 1-1为顶视图， 图 1-2为剖面结构图；
图 2是本发明的钉扎型、单势垒的闭合椭圆环状的磁性多层膜的结构示意图；图 2-1 为顶视图， 图 2-2为剖面结构图；
图 3是本发明的无钉扎型、含金属芯的、单势垒的闭合椭圆环状的磁性多层膜的结 构示意图； 图 3-1为顶视图， 图 3-2为剖面结构图；
图 4是本发明的钉扎型、含金属芯的、单势垒的闭合椭圆环状的磁性多层膜的结构 示意图； 图 4-1为顶视图， 图 4-2为剖面结构图；
图 5是本发明的无钉扎型、闭合椭圆环状的双中间层磁性隧道结多层膜的结构示意 图； 图 5-1为顶视图， 图 5-2为剖面结构图； ·
图 6是本发明的钉扎型、闭合椭圆环状的双中间层磁性隧道结多层膜的结构示意图； 图 6-1为顶视图， 图 6-2为剖面结构图；
图 7是本发明的无钉扎型、含金属芯的、 闭合椭圆环状的双中间层磁性隧道结多层 膜的结构示意图； 图 7-1为顶视图， 图 7-2为剖面结构图；
图 8是本发明的钉扎型、含金属芯的、 闭合椭圆环状的双中间层磁性隧道结多层膜 的结构示意图； 图 8-1为顶视图， 图 8-2为剖面结构图；
图 1一图 8中： 1-缓冲导电层； 2-硬磁层； 3-中间层； 4-软磁层； 5-覆盖层； 6-金属 芯； 8-反铁磁钉扎层； 9-被钉扎磁性层； 21-第一硬磁层； 22-第二硬磁层； 31-第一中 间层； 32-第二中间层； 81-第一反铁磁钉扎层； 82-第二反铁磁钉扎层； 91第一被钉扎 磁性层； 92-第二被钉扎磁性层； 31-第一中间层； 32-第二中间层；
图 9(A, B， C)是实施例 65中基于闭合状 (包括圆环状和椭圆环状)磁性多层膜的磁性 随机存取存储器的的 MRAM单元结构示意图；
图 10(A， B， C)是实施例 66中基于闭合状 (包括圆环状和椭圆环状)含金属芯磁性多层 膜的、利用一个晶体管控制一个存储单元读和写过程的、 同时利用金属芯中电流产生的 磁场驱动方式工作的磁性随机存取存储器的 MRAM单元结构示意图；
图 11(A, B, C)是实施例 67中基于闭合状 (包括圆环状和椭圆环状)含金属芯磁性多层 膜的、利用两个晶体管分别控制一个存储单元读和写过程的、 同时禾 11用金属芯中电流产 生的磁场驱动方式工作的磁性随机存取存储器的 MRAM单元剖面结构图；
.图 9一图 11中， 0晶体管 TR、 0a晶体管 TR的漏极、 Ob是晶体管 TR的源极、 0M 和 0b2分别是第一晶体管和第二晶体管的源极、 0c晶体管轻惨杂区、 62是晶体管 0的 栅极 (字线 WL)、 63和 67分别是第二晶体管和第一晶体管的栅极（第一字线 WL1和第 二字线 WL2)、 la、 lb、 lc、 ld、 le为 MRAM单元中的各绝缘层、 If为绝缘钝化层、 3a为第一导电接触孔、 3b为第二导电接触孔、 3b2为第三导电接触孔、 4a地线 GND、 4b为第一过渡金属层、 4e为第一位线、 4d为第二位线、 65为闭合状磁性多层膜存储单 元腹 L。 具体实施方式
实施例 1、
利用微加工方法制备无钉扎型环状磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 3nm的硬磁层 （HFM) 2 Co, 厚度为 lnm 的中间层（I) 3 Cu, 厚度为 lnm的软磁层（SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10·7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 施加 150Oe平面 诱导磁场。沉积好的磁性多层膜采用现有技术中的微加工技术，即首先经过涂胶、前烘， 再在电子束曝光机上， 根据所需的环状图形对片基进行曝光， 接着显影、 定影、 后供， 然后用离子刻蚀方法把磁性多层膜刻成环形， 最后用去胶剂浸泡进行去胶， 即形成圆环 状几何结构， 环的内径为 500nm， 外径为 800nm， 宽度为 300nm。然后在此刻蚀成形的 环状磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光 沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘层， 将各环状多层 膜进行掩埋并且相互隔离， 采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子 束设备上定位到沉积有环状多层膜的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘 层进行刻蚀， 使得绝缘层下掩埋的环状磁性多层膜暴露。最 利用高真空磁控溅射设备 沉积一层厚度为 2mn的导电层 Au， 生长条件如前所述， 用常规半导体微加工工艺加工 出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外曝光机上， 利用带有待加工图案的 光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电 层刻成四个电极的形状， 最后用去胶剂浸泡进行去胶， 即得到本发明的无钉扎型环状磁 性多层膜。 实施例 2〜7、
按照实施例 1相同的方法， 利用微加工方法制备无钉扎型环状磁性多层膜， 其磁性 多层膜的各层材料和厚度列于表 1中。
表 1、 本发明的利用微加工方法制备无钉扎型环状磁性多层膜的结构 实施例 2 . 3 4 5 6 7 成分 Si/Si02 Si/Si02 SiC SiC GaAs GaAs 片基
厚度 0.3mm 0.5mm 0.5mm 0.7讓 0.7mm 1mm 下部缓冲 成分 Cr Ta Ta Cr Ru Pt 导电层 1 厚度 5nm lOnm 50nm lOOnm 150nm 300nm 成分 Co Co CoFeB NiFeCo CoFe CoFeSiB 硬磁层 2
厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cu Cu MgO A1203 A1N ZnO 中间层 3
厚度 lnm lnm lnm lnm lnm lnm 成分 CoFeB NiFeSiB NiFe NiFe CoFeB NiFeSiB 软磁层 4
厚度 4nm 3nm 3nm 4nm 3nm 6nm 成分 Cr Ta Ta Cr Ru Pt 蘿 戸
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Al Au Cu Al Au Cu 导电层
厚度 5nm 5nm 5nm 5nm 5nm 5nm 内径 lOnm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOrun 环状结构
外径 20nm 400 nm 2000 nm 3200 nm 4000 nm 200000nm 实施例 8、
制备无钉扎型闭合椭圆环状的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 l Au， 厚度为 3nm的硬磁层（HFM) 2 Co, 厚度为 lnm 的中间层（I) 3 Cu, 厚度为 lnm的软磁层（SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5xl0_7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 施加 150Oe平面 诱导磁场。沉积好的磁性多层膜采用现有技术中的微加工技术，即首先经过涂胶、前供， 再在电子束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后 供， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm, 长轴内 径为 600nm， 长轴外径为 900nm， 椭圆环的短轴与长轴内径的比值为 1:1.2。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘 层，将各闭合环状多层膜进行掩埋并且相互隔离， 采用现有技术中的微加工技术进行刻 蚀， 即首先在聚焦离子束设备上定位到沉积有闭合矩形环状多层膜的位置， 接着利用聚 焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合形状的磁性多层 膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 2nm的导电层 Au， 生长条件如 前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深 紫外曝光机上， 利用带有待加 X图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后 用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状，最后用去胶剂浸泡进行 去胶， 即得到本发明的无钉扎型闭合形状的磁性多层膜， 其结构示意图如图 1所示。 实施例 9、
制备无钉扎型闭合椭圆环状的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 3nm的硬磁层 （HFM) 2 Co, 厚度为 lnm 的中间层（I) 3 Cu, 厚度为 lnm的软磁层（SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10_7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 施加 150Oe平面 诱导磁场。沉积好的磁性多层膜采用现有技术中的微加工技术，即首先经过涂胶、前烘， 再在电子束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后 烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内 径为 2500nm， 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘 层， 将各闭合环状多层膜进行掩埋并且相互隔离， 采用现有技术中的微加工技术进行刻 蚀， 即首先在聚焦离子束设备上定位到沉积有闭合矩形环状多层膜的位置， 接着利用聚 焦离子束刻蚀方法对 SiO2绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合形状的磁性多层 膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 2nm的导电层 Au， 生长条件如 前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深 紫外曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后 用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状，最后用去胶剂浸泡进行 去胶， 即得到本发明的无钉扎型闭合形状的磁性多层膜。 实施例 10〜： 15
按照实施例 8和 9相同的方法，利用微加工方法制备无钉扎型闭合橢圆环状的磁性 多层膜， 其磁性多层膜的各层材料和厚度列于表 2中。
表 2、 本发明的无钉扎型闭合椭圆环状的磁性多层膜的结构 实施例 10 11 12 13 14 15 成分 Si/Si02 Si/Si02 SiC SiC GaAs GaAs 片基
'厚度 0.3mm 0.5mm 0.5mm 0.7mm 0.7mm 1mm 下部缓冲 成分 Cr Ta Ta Cr Ru Pt 导电层 1 厚度 5nm lOnm 50nm lOOnm 150nm 300nm 成分 Co Co CoFeB NiFeCo CoFe CoFeSiB 硬磁层 2
厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cu Cu MgO A1203 A1N ZnO 中间层 3
厚度 lnm lnm lnm lnm lnm lnm 成分 CoFeB FeSiB NiFe NiFe CoFeB NiFeSiB 软磁层 4
厚度 4nm 3nm 3nm 4nra 3nm 6nm 成分 Cr Ta Ta Cr Ru Pt 覆盖层 5
厚度 5nm 5nm 5nm 5nm 5nm 5nm 导电层 成分 Al Au Cu Al Au Cu 短轴内径 lOnm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOnm 闭合椭圆短轴外径 20nm 400 nm 2000 nm 3200 nm 4000 run 200000nm 环状结构长轴内径 20nm 400 nm 3000 nm 4800 nm 8000 nm 400000nm 长轴外径 30nm 600 nm 4000 nm 6400 nm 10000 nm 500000nm 实施例 16、
利用微加工方法制备钉扎型环状磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si/Si02衬底上依次沉 积厚度为 2nm的下部缓冲导电层 l Au， 厚度为 10nm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 3nm的被钉扎磁性层（FM) 9 Co90Felo; 然后沉积 lnm的 Al， 经等离子体氧化 50秒形成的绝缘层作为中间层 (I) 3；在该中间层上依次沉积厚度为 3nm的软磁层 (FM) 4 Co9()Fe1()和厚度为 2nm的覆盖层 5 Au。上述磁性多层膜的生长条件:备底真空： 5χ10'7 帕； 溅射用高纯度氩气气压- 0.07帕； 溅射功率- 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层 9和软磁层 4时，施加 150Oe的平面诱导磁场。沉积好的磁性多层膜釆用 现有技术中的微加工技术， 即首先经过涂胶、前烘， 再在电子束曝光机上， 根据所需的 环状图形对片基进行曝光， 接着显影、 定影、后烘， 然后用离子刻蚀方法把磁性多层膜 刻成环形， 最后用去胶剂浸泡进行去胶， 即形成圆环状几何结构， 环的内径为 300nm， 外径为 600nm， 宽度为 300nm。然后在此刻蚀成形的环状磁性多层膜上， 利用常规的薄 膜生长手段，例如磁控溅射、 电子束蒸发、脉冲激光沉积、 电化学沉积、分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将各环状多层膜进行掩埋并且相互隔离， 采用现有技 术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有环状多层膜的位 置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的环状 磁性多层膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu， 生 长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在 紫外、 深紫外曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后 烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂 浸泡进行去胶， 即得到本发明的钉扎型环状磁性多层膜。 实施例 17〜22
按照实施例 3相同的方法， 利用微加工方法制备钉扎型环状磁性多层膜， 其磁性多 层膜的各层材料和厚度列于表 3中。
表 3、 本发明的利用微加工方法制备钉扎型环状磁性多层膜的结构
Figure imgf000017_0001
实施例 23、
制备钉扎型闭合椭圆环状的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si/Si02衬底上依次沉 积厚度为 2nm的下部缓冲导电层 l Au， 厚度为 lOnm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 ' 3nm的被钉扎磁性层（FM) 9 Co9oFe10; 然后沉积 lnm的 Al， 经等离子体氧化 50秒形成的绝缘层作为中间层 (1) 3；在该中间层上依次沉积厚度为 3nm的软磁层（FM) 4 Co9QFeu)和厚度为 2nm的覆盖层 5 Au。上述磁性多层膜的生长条件:备底真空: 5χ 10_7 帕； 溅射用髙纯度氩气气压： 0.07帕； 溅射功率- 120瓦； 样品架 ¾转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层和软磁层时， 加 150Oe的平面诱导磁场。沉积好的磁性多层膜采用现有 技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的闭合 状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜 刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合状椭圆环几何结构， 椭圆环的 短轴内径为 500nm， 短轴外径为 800nm， 长轴内径为 600nm， 长轴外径为 900nm, 椭圆 环的短轴与长轴内径的比值为 1:1.2。然后在此刻蚀成形的闭合形状的磁性多层膜上，利 用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、、 电化学沉积、 分 子束外延等，沉积一层 50nm厚的 Si02绝缘层，将各闭合环状多层膜进行掩埋并且相互 隔离， 采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积 有闭合环状多层膜的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使 得绝缘层下掩埋的闭合形状的磁性多层膜暴露。最后利用高真空磁控溅射设备沉积一层 厚度为 5nm的导电层 Cu， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、前烘， 再在紫外、 深紫外曝光机上， 利用带有待加工图案的光刻版进 行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四 个电极的形状， 最后用去胶剂浸泡进行去胶， 即得到本发明的钉扎型闭合形状的磁性多 层膜， 其结构示意图如图 2所示。 实施例 24、
制备钉扎型闭合椭圆环状的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si/Si02衬底上依次沉 积厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 10nm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 3nm的被钉扎磁性层（FM) 9 Co9oFe10; 然后沉积 lnm的 A1, 经等离子体氧化 50秒形成的绝缘层作为中间层 (I) 3；在该中间层上依次沉积厚度为 3nm的软磁层（FM) 4 Co9QFe1()和厚度为 2nm的覆盖层 5 Au。上述磁性多层膜的生长条件:备底真空 : 5χ10_7 帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层 9和软磁层 4时，施加 150Oe的平面诱导磁场。沉积好的磁性多层膜采用 现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的 闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多 层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合状椭圆环几何结构， 椭圆 环的短轴内径为 500nm，短轴外径为 800nm，长轴内径为 2500nm，长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。然后在此刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 50nm厚的 Si02绝缘层，将各闭合环状多层膜进行掩埋并且相 互隔离， 采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉 积有闭合环状多层膜的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合形状的磁性多层膜暴露。最后利用高真空磁控溅射设备沉积一 层厚度为 5nm的导电层 Cu，生长条件如前所述，用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外曝光机上， 利用带有待加工图案的光刻版进 行曝光， 接着显影、定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四 个电极的形状， 最后用去胶剂浸泡进行去胶， 即得到本 明的钉扎型闭合形状的磁性多 层膜。 实施例 25〜30
按照实施例 23和 24相同的方法，利用微加工方法制备钉扎型闭合椭圆环状的磁性 多层膜， 其磁性多层膜的各层材料和厚度列于表 4中。
表 4、 本发明的钉扎型闭合椭圆环状的磁性多层膜的结构
Figure imgf000019_0001
实施例 31、 利用微加工方法制备无钉扎型环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 5nm的下部缓冲导电层 1 Ru， 厚度为 3nm的硬磁层（HFM) 2 Co, 厚度为 lnm 的中间层 （I) 3 Cu， 厚度为 lnm的软磁层 （SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10_7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 要加上诱导磁场 150Oe。 沉积好的磁性多层膜采用现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的环状图形对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜刻成环形， 最后用去胶剂浸泡进行去胶， 即形成圆环 状几何结构， 环的内径为 500nm， 外径为 800nm， 宽度为 300nm。 然后在此刻蚀成形的 环状磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光 沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘层， 将各环状多层 膜进行掩埋并且相互隔离。釆用现有技术中的微加工技术， 即首先在聚焦离子束设备上 定位到环状多层膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行 刻蚀，形成直径为 300mn的柱状孔洞，之后利用聚焦离子束辅助沉积方法在孔洞位置沉 积金属材料 Au， 形成一个直径为 300nm的 Au金属芯 6。 然后采用现有技术中的微加 工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有环状多层膜的位置， 接着利 用聚焦离子束刻蚀方法对. Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的环状磁性多层膜 暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 2nm的导电层 Au， 生长条件如前 所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫 外曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、后烘， 然后用 离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状，最后用 '去胶剂浸泡进行去 胶， 即得到本发明的无钉扎型环状含金属芯的磁性多层膜。 实施例 32〜37
按照实施例 31相同的方法， 利用微加工方法制备无钉扎型环状含金属芯的磁性多 层膜， 其磁性多层膜的各层材料和厚度列于表 5中。
表 5、 本发明的利用微加工方法制备无钉扎型环状含金属芯的磁性多层膜的结构 实施例 - 32 33 34 34 36 37 成分 Si/Si02 Si/Si02 SiC SiC GaAs GaAs 片基
厚度 0.3mm 0.5mm 0.5mm 0.7mm 0.7mm 1mm 下部缓冲 成分 Cr Ta Cr Ta Ru Pt 导电层 1 厚度 5nm lOnm 50ran lOOnm. 150nm 300nm 硬磁层 2 成分 Co Co CoFeB NiFeCo CoFe CoFeSiB 厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cu Cu MgO A1203 A1N ZnO 中间层 3
厚度 lnm lnm lnm lnm lnm lnm 成分 CoFeB NiFeSiB NiFe NiFe CoFeB NiFeSiB 软磁层 4
厚度 4nm 3nm 3nm 4nm 3nm 6nm 成分 Cr Ta Ta Cr Ru Pt 覆盖层 5
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Al Au Cu Al Au Cu 导电层
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Au Ag Pt Ta W Ti 金属芯 6
直径 5nm 100 ran 500 nm 800 nm 1000 nm 50000 nm 内径 lOnm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOnm 环状结构
外径 20nm 400 nm 2000 nm 3200 nm 4000 nm 200000 nm 实施例 38、
制备无钉扎型闭合椭圆环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 l Au， 厚度为 3nm的硬磁层（HFM) 2 Co, 厚度为 lnm. 的中间层（I) 3 Cu, 厚度为 lnm的软磁层（SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10_7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 施加 150Oe平面 诱导磁场。沉积好的磁性多层膜采用现有技术中的微加工技术，即首先经过涂胶、前烘， 再在电子束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、后 烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内 径为 600nm， 长轴外径为 900nm， 椭圆环的短轴与长轴内径的比值为 1:1.2。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘 层， 将各闭合环状多层膜进行掩埋并且相互隔离。采用现有技术中的微加工技术， 即首 先在聚焦离子束设备上定位到闭合环状多层膜的几何中心位置，接着利用聚焦离子束刻 蚀方法对 Si02绝缘层进行刻蚀， 形成横截面为椭圆形的柱状孔洞， 其中椭圆形短轴为 300nm, 短轴与长轴比值为 1 : 1.2，'之后利用聚焦离子束辅助沉积方法在孔洞位置沉禾^ 金属材料 Au， 形成一个横截面为矩形的柱状的 Au金属芯 6，截面形状如前所述。然后 采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有闭合 矩形环状多层膜的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得 绝缘层下掩埋的闭合形状的磁性多层膜暴露。最后利用高真空磁控溅射设备沉积一层厚 度为 2nm的导电层 Au， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即 首先经过涂胶、 前烘， 再在紫外、深紫外曝光机上， 利用带有待加工图案的光刻版进行 曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个 电极的形状， 最后用去胶剂浸泡进行去胶， 即得到本发明的无钉扎型闭合形状的磁性多 层膜， 其结构示意图如图 3所示。 实施例 39、
制备无钉扎型闭合椭圆环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 3nm的硬磁层（HFM) 2 Co, 厚度为 lnm 的中间层（I) 3 Cu， 厚度为 lnm的软磁层（SFM) 4 Co和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10·7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积硬磁层 2和软磁层 4时， 施加 50Oe平面诱 导磁场。 沉积好的磁性多层膜采用现有技术中的微加工技术， 即首先经过涂胶、 前供， 再在电子束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后 烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内 径为 2500nm， 长轴外径为 2800nm，，椭圆环的短轴与长轴内径的比值为 1 :5。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 lOOnm厚的 Si02绝缘 层， 将各闭合环状多层膜进行掩埋并且相互隔离。采用现有技术中的微加工技术， 即首 先在聚焦离子束设备上定位到闭合环状多层膜的几何中心位置，接着利用聚焦离子束刻 蚀方法对 Si02绝缘层进行刻蚀， 形成横截面为椭圆形的柱状孔洞， 其中椭圆形短轴为 300nm, 短轴与长轴比值为 1 : 5， 之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金 属材料 Au，形成一个横截面为矩形的柱状的 Au金属芯 6， 截面形状如前所述。然后采 用现有技术中的微加工技术进行刻蚀，即首先在聚焦离子束设备上定位到沉积有闭合矩 形环状多层膜的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝 缘层下掩埋的闭合形状的磁性多层膜暴露。最后利用高真空磁控溅射设备沉积一层厚度 为 2nm的导电层 Au， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首 先经过涂胶、前烘， 再在紫外、 深紫外曝光机上， 利用带有待加工图案的光刻版进行曝 光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个电 极的形状，最后用去胶剂浸泡进行去胶， 即得到本发明的无钉扎型闭合形状的磁性多层 膜。 实施例 40〜45
按照实施例 38和 39相同的方法，利用微加工方法制备无钉扎型闭合含金属芯形状 的磁性多层膜， 其磁性多层膜的各层材料和厚度列于表 6中。
表 6、 本发明的无钉扎型闭合含金属芯形状的磁性多层膜的结构
Figure imgf000023_0001
实施例 46、
利用微加工方法制备钉扎型环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si02/Si衬底上依次沉 积厚度为 25nm的下部缓冲导电层 1 Cr， 厚度为 lOnm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 3nm的被钉扎磁性层（FM) 9 Co90Fe10! 然后沉积 lnm的 Al， 经等离子体氧化 50秒形成的绝缘层作为中间层 (1) 3；在该中间层上依次沉积厚度为 lnm的软磁层（FM) 4 Co9QFe1()和厚度为 2nm的覆盖层 5 Cu。上述磁性多层膜的生长条件：备底真空： 5xl0'7 帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层 9和软磁层 4吋， 要加上诱导磁场 150Oe。沉积好的磁性多层膜经过背景 技术中介绍的微加工采用现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子 束曝光机上， 根据所需的环状图形对片基进行曝光， 接着显影、 定影、 后烘， 然后用离 子刻蚀方法把磁性多层膜刻成环形， 最后用去胶剂浸泡进行去胶， 即形成圆环状几何结 构， 环的内径为 300nm， 外径为 600nm， 宽度为 300nm。然后在此刻蚀成形的环状磁性 多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电 化学沉积、分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将各环状多层膜进行掩埋 并且相互隔离。采用现有技术中的微加工技术， 即首先在聚焦离子束设备上定位到环状 多层膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 形成 直径为 300nm的柱状孔洞，之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料 Cu，形成一个直径为 300nm的 Cu金属芯 6。然后釆用现有技术中的微加工技术进行刻 蚀， 即首先在聚焦离子束设备上定位到沉积有环状多层膜的位置， 接着利用聚焦离子束 刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的环状磁性多层膜暴露。 最后利 用高真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu， 生长条件如前所述， 用常规 半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法 把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂浸泡进行去胶， 即得到本 发明的钉扎型环状含金属芯的磁性多层膜。 实施例 47〜52
按照实施例 46相同的方法， 利用微加工方法制备钉扎型环状含金属芯的磁性多层 膜， 其磁性多层膜的各层材料和厚度列于表 7中。
表 7、 本发明的利用微加工方法制备钉扎型环状含金属芯的磁性多层膜的结构 实施例 47 48 ' 49 50 51 52 成分 Si/Si02 Si/Si02 SiC SiC GaAs GaAs 片基
厚度 0.3mm 0.5mm 0.5mm 0.7mm 0.7mm 1mm 下部缓冲 成分 Cr Ta Cr Ta Ru Pt 导电层 1 厚度 5nm lOnm 50nm lOOnra 150nm 300nm 反铁磁 成分 IrMn FeMn IrMn CrMn IrMn PtMn 钉扎层 8 厚度 lOnm lOnm lOnm lOnm lOnm lOnm 被钉扎 成分 Co . Fe CoFeB NiFeCo CoFe CoFeSiB 磁性层 9 厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cu Cr MgO A1203 A1N ZnO 中间层 3
厚度 lnm lnm lnm lnm lnm lnm 成分 Co Fe CoFeB NiFeCo CoFe CoFeSiB 软磁层 4 厚度 4nm 5nm 5nm 5nm 5nm 4nm
Cr a Ta Cr Ru Pt 薦 曰 r 成分 T
俊皿 。
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Al Au Cu Al Au Cu 导电层
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Au Ag Pt Ta W Ti 金属芯 6
直径 5nm 100 nm 500 nm 800 nm 1000 nm 50000 nm 内径 lOnm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOnm 环状结构
外径 20nm . 400 nm 2000 nm 3200 nm 4000 nm 200000 nm 实施例 53、
制备钉扎型闭合椭圆环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si/Si02衬底上依次沉 积厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 10nm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 3nm的被钉扎磁性层（FM) 9 Co90Fe10; 然后沉积 lnm的 Al， 经等离子体氧化 50秒形成的绝缘层作为中间层 (I) 3；在该中间层上依次沉积厚度为 3nm的软磁层（FM) 4 Co9。Fe1Q和厚度为 2nm的覆盖层 5 Au。上述磁性多层膜的生长条件:备底真空: 5><10—7 帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层 8和软磁层 4时，施加 150Oe的平面诱导磁场。沉积好的磁性多层膜采用 现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的 闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多 层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合状椭圆环几何结构， 椭圆 环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内径为 600nm， 长轴外径为 900nm， 椭圆环的短轴与长轴内径的比值为 1:1.2。 然后在此刻蚀成形的闭合形状的磁性多层膜 上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化学沉 积、分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将各闭合环状多层膜进行掩埋并 且相互隔离。采用现有技术中的微加工技术， 即首先在聚焦离子束设备上定位到闭合环 状多层膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 形 成横截面为椭圆形的柱状孔洞， 其中椭圆形短轴为 300nm， 短轴与长轴比值为 1 : 1.2， 之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料 Au， 形成一个横截面为矩 形的柱状的 Au金属芯， 截面形状如前所述。 然后釆用现有技术中的微加工技术进行刻 蚀， 即首先在聚焦离子束设备上定位到沉积有闭合环状多层膜的位置， 接着利用聚焦离 子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合形状的磁性多层膜暴 露。 最后利用髙真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu， 生长条件如前所 述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外 曝光机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离 子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂浸泡进行去 胶， 即得到本发明的钉扎型闭合形状的磁性多层膜， 其结构示意图如图 4所示。 实施例 54、
制备钉扎型闭合椭圆环状含金属芯的磁性多层膜
利用高真空磁控溅射设备在经过常规方法清洗的 0.8mm厚的 Si/Si02衬底上依次沉 积厚度为 2nm的下部缓冲导电层 1 Au， 厚度为 lOnm的反铁磁钉扎层（AFM) 8 IrMn, 厚度为 3nm的被钉扎磁性层（FM) 9 Co90Felo; 然后沉积 lnm的 A1, 经等离子体氧化 50秒形成的绝缘层作为中间层 (I) 3；在该中间层上依次沉积厚度为 3nm的软磁层（FM) 4 Co9。Fei()和厚度为 2nm的覆盖层 5 Au。上述磁性多层膜的生长条件：备底真空： 5x10'7 帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1 埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积 被钉扎磁性层 9和软磁层 4时，施加 150Oe的平面诱导磁场。沉积好的磁性多层膜采用 现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上， 根据所需的 闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多 层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合状椭圆环几何结构， 椭圆 环的短轴内径为 500nm，短轴外径为 800nm，长轴内径为 2500nm，长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。然后在此刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激光沉积、 电化学沉积、 分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将各闭合环状多层膜进行掩埋并且相 互隔离。采用现有技术中的微加工技术， 即首先在聚焦离子束设备上定位到闭合环状多 层膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 形成横 截面为椭圆形的柱状孔洞， 其中椭圆形短轴为 300nm， 短轴与长轴比值为 1 : 5，之后利 用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料 Au， 形成一个横截面为矩形的柱 状的 Au金属芯 6 , 截面形状如前所述。 然后采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有闭合环状多层膜的位置，接着利用聚焦离子束 刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合形状的磁性多层膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外曝光 机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离子刻 蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂浸泡进行去胶， 即 得到本发明的钉扎型闭合形状的磁性多层膜。 实施例 55〜60
按照实施例 53和 54相同的方法，利用微加工方法制备钉扎型闭合环状含金属芯的 磁性多层膜， 其磁性多层膜的各层材料和厚度列于表 8中。
表 8、 本发明的钉扎型闭合含金属芯形状的磁性多层膜的结构 实施例 55 56 57 58 59 60 成分 Si/Si02 Si/Si02 SiC SiC GaAs GaAs 片基
厚度 0.3mm 0.5mm 0.5mm 0.7mm 0.7mm 1mm 下部缓冲 成分 Cr Ta Cr Ta Ru Pt 导电层 1 厚度 5nm lOnm 50nm lOOnm 150nm 300nm 反铁磁 成分 IrMn FeMn IrMn CrMn IrMn PtMn 钉扎层 8 厚度 lOnm lOnm lOnm lOnm lOnm lOnm 被钉扎 成分 Co Fe CoFeB NiFeCo CoFe CoFeSiB 磁性层 9 厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cu Cr MgO A1203 A1N ZnO 中间层 3
厚度 . lnm lnm lnm lnm lnm lnm 成分 Co Fe CoFeB NiFeCo CoFe CoFeSiB 软磁层 4 厚度 4nm 5nm 5nm 5nm 5nm 4nm 成分 Cr Ta Ta Cr Ru Pt
■iS.sm.ls。
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Al Au Cu Al Au Cu 导电层
厚度 5nm 5nm 5nm 5nm 5nm 5nm 成分 Au Ag Pt Ta W Ti 金属芯 6 短轴 lOnm 50 nm 250 nm 1000 nm 250 nm 20000nm 长轴 lOnm 100 nm 750 nm 3000 nm lOOOnm 80000nm 短轴内径 20nm 200 nm 1000 nm 1600 nm 2000 nm lOOOOOnm 闭合椭圆短轴外径 30nm 400 nm 2000 nm 3200 nm 4000 nm 200000nm 环状结构长轴内径 20nm 400 nm 3000 nm 4800 nm 8000 nm 400000nm 长轴外径 30nm 600 nm 4000 nm 6400 nm lOOOO nm 500000nm 实施例 61、
制备无钉扎型闭合椭圆环状的双中间层型磁性隧道结
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si 底上依次沉积 厚度为 2nm的下部缓冲导电层 l Ta， 厚度为 3nm的第一硬磁层（HFM) 2 1 Co, 厚度 为 lnm的第一中间层 3 1 A1203， 厚度为 lnm的软磁层（SFM)4 NiFe,厚度为 lnm的第 二中间层 3 2 A1203,厚度为 3nm的第二硬磁层（HFM) 2 2 Co9oFe1()和厚度为 4nm的覆 盖层 5 Ru。上述磁性多层膜的生长条件：备底真空： 5X10'7帕；溅射用髙纯度氩气气压- 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3-1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积铁磁层时， 施加 150Oe的平面 诱导磁场。沉积好的磁性多层膜采用现有技术中的微加工技术，即首先经过涂胶、前烘， 再在电子束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后 烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm, 短轴外径为 800nm， 长轴内 径为 2500nm， 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发、脉冲激光沉积、电化学沉积、分子束外延等，沉积一层 50nm厚的 Si02绝缘层， 将各闭合环状多层膜进行掩埋并且相互隔离， 采用现有技术中的微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有闭合环状多层膜的位置，接着利用聚焦离子束 刻蚀方法对 Si02绝缘层进行刻^， 使得绝缘层下掩埋的闭合形状的磁性多层膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘， 再在紫外、 深紫外曝光 机上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离子刻 蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂浸泡进行去胶， 即 得到本发明的闭合椭圆环状的双中间层型磁性隧道结， 其结构示意图如图 5所示。 实施例 62、
制备钉扎型闭合椭圆环状的双中间层型磁性隧道结
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 1 Ta， 厚度为 lOnm的第一反铁磁钉扎层 81 IrMn, 厚度 为 5nm的第一被钉扎磁性层 91 CoFeB,厚度为 lnm的第一中间层 31 A1203,厚度为 lnm 的软磁层 4 Co，厚度为 lnm的第二中间层 3 2 A1203,厚度为 5nm的第二被钉扎磁性层 CoFeB, 厚度为 lOnm的第二反铁磁钉扎层 IrMn和厚度为 4nm的覆盖层 Ru。 上述磁性 多层膜的生长条件： 备底真空： 5xlO_7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长 时间： 薄膜厚度 /生长速率； 在沉积第一反铁磁钉扎层 81、 第二反铁磁钉扎层 82、 第一 被钉扎磁性层 91、 第二被钉扎磁性层 92和软磁层 4时， 施加 150Oe的平面诱导磁场。 沉积好的磁性多层膜采用现有技术中的微加工技术， 即首先经过涂胶、前烘， 再在电子 束曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后 用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合 状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内径为 2500nm, 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。 然后在此刻蚀 成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸 发、脉冲激光沉积、 电化学沉积、分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将 各闭合环状多层膜进 fi掩埋并且相互隔离， 采用现有技术中的微 ¾1工技术进行刻蚀， 即 首先在聚焦离子束设备上定位到沉积有闭合环状多层膜的位置，接着利用聚焦离子束刻 蚀方法对 Si02绝缘层进行刻蚀, 使得绝缘层下掩埋的闭合形状的磁性多层膜暴露。 最 后利用高真空磁控溅射设备沉积、一层厚度为 5nm的导电层 Cu， 生长条件如前所述， 用 常规半导体微加工工艺加工出电极， 即首先经过涂胶、前烘， 再在紫外、 深紫外曝光机 上， 利用带有待加工图案的光刻版进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀 方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶剂浸泡进行去胶， 即得 到本发明的闭合椭圆环状的双中间层型磁性隧道结， 其结构示意图如图 6所示。 实施例 63、
制备无钉扎型闭合椭圆环状含金属芯的双中间层型磁性隧道结
利用 真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 lTa， 厚度为 3nm第一硬磁层（HFM) 21Co， 厚度为 lnm 的第一中间层 31 A1203， 厚度为 lnm的软磁层（SFM)4 NiFe,厚度为 lnm的第二中间 层 32 A1203，厚度为 3nm的第二硬磁层（HFM)22 CogoFeK)和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10'7帕； 溅射用高纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积铁磁层时， 施加 150Oe平面诱导磁场。 沉 积好的磁性多层膜釆用现有技术中的微加工技术， 即首先经过涂胶、前烘， 再在电子束 曝光机上， 根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后烘， 然后用 离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即形成闭合状 椭圆环几何结构，椭圆环的短轴内径为 500nm，短轴外径为 800nm，长轴内径为 2500nm， 长轴外径为 2800nm，椭圆环的短轴与长轴内径的比值为 1:5。然后在此刻蚀成形的闭合 形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子束蒸发、 脉冲激 光沉积、 电化学沉积、 分子束外延等， 沉积一层 50nm厚的 Si02绝缘层， 将各闭合环状 多层膜进行掩埋并且相互隔离。采用现有技术中的微加工技术， 即首先在聚焦离子束设 备上定位到闭合环状多层膜的几何中心位置， 接着利用聚焦离子束刻蚀方法对 Si02绝 缘层进行刻蚀， 形成横截面为椭圆形的柱状孔洞， 其中椭圆形短轴为 300nm， 短轴与轴 比值为 1 : 5， 之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料 Au， 形成一 个横截面为椭圆形的柱状的 Au金属芯 6， 截面形状如前所述。 然后采用现有技术中的 微加工技术进行刻蚀， 即首先在聚焦离子束设备上定位到沉积有闭合环状多层膜的位 置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的闭合 形状的磁性多层膜暴露。 最后利用高真空磁控溅射设备沉积一层厚度为 5nm的导电层 Cu,生长条件如前所述，用常规半导体微加工工艺加工出电极， 即首先经过涂胶、前烘， 再在紫外、深紫外曝光机上， 利用带有待加工图案的光刻版进^曝光，接着显影、定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后用去胶 剂浸泡进行去胶， 即得到本发明的闭合椭圆环状含金属芯的双中间层型磁性隧道结， 其 结构示意图如图 7所示。 实施例 64、
制备钉扎型闭合椭圆环状含金属芯的双中间层型磁性隧道结
利用高真空磁控溅射设备在经过常规方法清洗的 1mm厚的 Si02/Si衬底上依次沉积 厚度为 2nm的下部缓冲导电层 1 Ta， 厚度为 10nm的第一反铁磁钉扎层 81 IrMn, 厚度 为 5nm的第一被钉扎磁性层 91 CoFeB, 厚度为 lnm的第一中间层 31 A1203， 厚度为 lnm的软磁层 4 Co, 厚度为 lnm的第二中间层 32 A1203， 厚度为 5nm的第二被钉扎磁 性层 92 CoFeB,厚度为 10nm的第二反铁磁钉扎层 82 IrMn和厚度为 4nm的覆盖层 5 Ru。 上述磁性多层膜的生长条件： 备底真空： 5χ10_7帕； 溅射用髙纯度氩气气压： 0.07帕； 溅射功率： 120瓦； 样品架旋转速率： 20rmp; 生长温度： 室温； 生长速率： 0.3〜1.1埃 /秒； 生长时间： 薄膜厚度 /生长速率； 在沉积第一反铁磁钉扎层 81 、 第二反铁磁钉扎 层 82、 第一被钉扎磁性层 91、 第二被钉扎磁性层 92和软磁层 4时， 施加 50Oe平面诱 导磁场。 沉积好的磁性多层膜采用现有技术中的微加工技术， 即首先经过涂胶、 前烘， 再在电子束曝光机上，，根据所需的闭合状椭圆环对片基进行曝光， 接着显影、 定影、 后 烘， 然后用离子刻蚀^法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶， 即 形成闭合状椭圆环几何结构， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内 径为 2500nm, 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。 然后在此 刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长手段， 例如磁控溅射、 电子 束蒸发、脉冲激光沉积、电化学沉积、分子束外延等，沉积一层 50nm厚的 Si02绝缘层， 将各闭合环状多层膜进行掩埋并且相互隔离。采用现有技术中的微加工技术， 即首先在 聚焦离子束设备上定位到闭合环状多层膜的几何中心位置，接着利用聚焦离子束刻蚀方 法对 Si02绝缘层进行刻蚀，形成横截面为椭圆形的柱状孔洞，其中椭圆形短轴为 300nm， 短轴与轴比值为 1 : 5,之后利用聚焦离子束辅助沉积方法在孔洞位置沉积金属材料 Au， 形成一个横截面为椭圆形的柱状的 Au金属芯 6， 截面形状如前所述。 然后采用现有技 术中的微加工技术进 刻蚀， 即首先在聚焦离子束设备上定位到沉积有闭合环状多层膜 的位置， 接着利用聚焦离子束刻蚀方法对 Si02绝缘层进行刻蚀， 使得绝缘层下掩埋的 闭合形状的磁性多层膜暴露。最后利用髙真空磁控溅射设备沉积一层厚度为 5nm的导电 层 Cu， 生长条件如前所述， 用常规半导体微加工工艺加工出电极， 即首先经过涂胶、 前烘，再在紫外、深紫外曝光机上，利用带有待加工图案的光刻版进行曝光，接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜上的导电层刻成四个电极的形状， 最后 用去胶剂浸泡进行去胶，即得到本发明的闭合椭圆环状含金属芯的双中间层型磁性隧道 结， 其结构示意图如图 8所示。 实施例 65
如图 9A— C所示，磁性随机存取存储器存储单元阵列由大量的 MRAM单元组合而 成， 在一个 MRAM单元中， 包括一个闭合椭圆环状磁性多层膜存储单元 (RML)65、 晶 体管 (TR
)0、第一过渡金属层 (TM)4b、接触孔 (3a、 3b)和一组布线， 即位线 (BL) 4c、 字线 (WL) 62 以及地线 (GND) 4a。
该闭合椭圆环状磁性多层膜存储单元 (RML)65 中的磁性多层膜的结构为生长在第 一过渡金属层 (TM)4b 上厚度为 2nm的下部缓冲导电层 l Au， 厚度为 5nm的硬磁层 (HFM) 2 CoFe, 厚度为 lnm的中间层（I) 3 Cu， 厚度为 lnm的软磁层（SFM) 4 NiFe 和厚度为 4nm的覆盖层 5 Ru、 厚度为 1 0 nm的导电层 Au， 闭合状结构的制备已于另 案申请的专利中详细给出， 椭圆环的短轴内径为 500nm， 短轴外径为 800nm， 长轴内径 为 2500nm， 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值为 1:5。
该闭合椭圆环状磁性多层膜存储单元 (RML)65和晶体管 (TR)0通过第一过渡金属层 (TM)4b及接触孔 (3b)相互连接。在布局上将位线 (BL)4c布置在闭合椭圆环状磁性多层膜 存储单元 RML(65)的上方并且与闭合状磁性多层膜存储单元 (RML)65直接相连。
如图 9B所示， 整个 MRAM单元由若干层 la、 lb、 lc、 If构成， 这些层中的非功 能区域由绝缘掩埋介质如 Si02等所掩埋。在 MRAM单元中金属布线层仅有两层， 即位 线 (BL) 4c和地线 (GND)4a与第一过渡金属层 (TM)4b， 闭合状磁性多层膜存储单元 (RML)65布置在位线 (BL) 4c下方并且其上部电极与位线 (BL)4c直接连接； 闭合状磁性 多层膜存储单元 (RML)65的下部电极通过过渡金属层 (TM)4b、接触孔 (3b)与晶体管 (TR)0 的漏极 (Ob)相连接。
在 MRAM的读写操作中，根据背景技术中介绍过的自旋转力矩效应，当位线 (BL)4c 中的电流小于一个低临界值 相应电流密度 Ja=102A/cm2，电流 =电流密度 X闭合状磁 性多层膜截面积)吋， 位线 (BL) 4c 中的电流不会改变闭合状磁性多层膜存储单元 (RML)65的磁化状态， 从而实现 MRAM的读操作； 而当位线 (BL)4c中的电流大于这个 低临界值 IC1而小于高临界值 /C2 (相应电流密度 JC2=105A/cm2， 电流 =电流密度 X闭合状 磁性多层膜截面积)时， 位线 (BL)4c 中的电流的方向将会决定闭合状磁性多层膜存储单 元 (RML)65的比特层 （软磁层或软磁层） 的磁化状态， 使得比特层 (软磁层或软磁层)与 被钉扎磁性层 (或硬磁层)的磁化状态分别沿顺时针或逆时针方向相同或相反 （即磁化强 度平行或反平行)， 从而获得低电阻和高电阻两种状态（即获得高输出电压和低输出电 压两种状态），也就是通过控制电流的方向就可以实现 MRAM的写操作。这就是本实施 例的 MRAM利用自旋转力矩效应方式的工作原理。
由此， 以图 9A、 9B所示的单元为例， 在 MRAM的寻址读出操作中， 首先由被选 择的字线 (WL)62给出一个适当的电平使晶体管 (TR)0工作于导通状态，然后由被选择的 位线 (BL)4c导出一个量值小于低临界值 Ici的读出电流， 则读出电流由位线 BLl(4c)经 由闭合状磁'性多层膜存储单元 (RML)65、 第一过渡金属层 (TM)4b、 接触孔 (3b)、 晶体管 (TR) 0的漏极 (0b)、 晶体管 TR(0)的源极 (0a)、 接触孔 (3a)而到达地线 GND(4a；)， 从而获 得闭合状磁'性多层膜存储单元 (RML)65 比特层 （软磁层或软磁层） 当前的磁化状态， 即 MRAM单元中存储的数据；在 MRAM的寻址写入操作中，首先由被选择的字线 (WL) 62给出一个适当的电平使晶体管 (TR)0工作于导通状态，然后由被选择的位线 (BL)4c导 出一个量值大于低临界值 Ici而小于高临界值 IC2的写入电流， 由于自旋转力矩效应的作 用， 闭合状磁性多层膜存储单元 (RML)65的磁化状态将由写入电流的方向所决定， 因此 当写入电流由位线 (BL)4c经由闭合状磁性多层膜存储单元 (RML)65、 第一过渡金属层 (TM)4b、 接触孔 (3b)、 晶体管 (TR)0的漏极 (0b)、 晶体管 (TR)0的源极 (0a)、 接触孔 (3a) 到达地线 GND(4a)后， 闭合状磁性多层膜存储单元 (RML)65 的比特层 （软磁层） 的磁 化状态也随即由写入电流所写入， 于是完成了 MRAM单元中数据的写入。 实施例 66
如图 10A— C所示， 磁性随机存取存储器存储单元阵列由大量的 MRAM单元组合 而成， 在一个 MRAM单元中， 包括一个闭合椭圆环状磁性多层膜存储单元 65、 布置在 闭合椭圆环状磁性多层膜存储单元 65的几何中心的金属芯 6、 晶体管 0、第一过渡金属 层 4b、接触孔 (3a、 3b)和一组布线， 即第一位线 4e、第二位线 4d、字线 62以及地线 4a。 闭合椭圆环状磁性多层膜存储单元 65和晶体管 0通过第一过渡金属层 4b及接触孔 3b 相互连接。在布局上将位线第二位线 4d布置在闭合椭圆环状磁性多层膜存储单元 65的 上方并且与该闭合椭圆环状磁性多层膜存储单元直接相连， 第一位线 4e布置在第二位 线 4d的上方， 且与第二位线 4d平行， 两者之间由绝缘层 le隔离。
该闭合椭圆环状磁性多层膜存储单元 65 中的磁性多层膜的结构为生长在第一过渡 金属层 4b上厚度为 10nm的下部缓冲导电层 lCr，厚度为 10nm的反铁磁钉扎层 8 PtMn, 厚度为 2nm的被钉扎磁性层 9Ni79Fe21， 厚度为 0.8nm的中间层 (1)3 TiO, 厚度为 lnm的 软磁层 4 Ni79Fe2^t!厚度为 2nm的覆盖层 5 Pt， 椭圆环的短轴内径为 500nm， 短轴外径 为 800nm， 长轴内径为 2500nm， 长轴外径为 2800nm， 椭圆环的短轴与长轴内径的比值 为 1:5。布置在闭合状磁性多层膜存储单元 65的几何中心的金属芯 6为截面为椭圆形的 Au金属芯， 椭圆形短轴 300nm， 短边与长边的宽度比值为 1:5。
如图 10B所示， 整个 MRAM单元由若干层 la、 lb、 lc、 le、 If构成， 这些层中的 非功能区域由绝缘掩埋介质如 Si02等所掩埋。 在 MRAM单元中金属布线层仅有三层， 即第一位线 4e、 第二位线 4d和地线 GND4a与第一过渡金属层 4b， 闭合状磁性多层膜 存储单元 65布置在第二位线 4d上方并且其上部电极与第一位线 4e直接连接； 闭合状 磁性多层膜存储单元 65的下部电极通过第一过渡金属层 4b、接触孔 3b与晶体管 0的漏 极 Ob相连接；布置在闭合状磁性多层膜存储单元 65的几何中心的金属芯 6与顶部的第 一位线 4e和底部的第一过渡金属层 4b直接连接。
由此， 以图 10A、 10B所示的单元为例， 在 MRAM的寻址读出操作中， 首先由被 选择的字线 62给出一个适当的电平使晶体管 0工作于导通状态， 然后由被选择的第二 位线 4d导出一个量值小于低临界值 la的读出电流 (相应电流密度 Jc;=102A/cm2， 电流 = 电流密度 X闭合状磁性多层膜截面积)， 则读出电流由第二位线经由闭合状磁性多层膜 存储单元 65、 第一过渡金属层 4b、 接触孔 3b、 晶体管 0的源极 0b、 晶体管 0的漏极 0a、 接触孔 3a而到达地线 4a， 从而获得闭合状磁性多层膜存储单元 65 比特层（软磁 层或软磁层） 当前的磁化状态， 即 MRAM单元中存储的数据； 在 MRAM的寻址写入 操作中， 首先由被选择的字线 62给出一个适当的电平使晶体管 0工作于导通状态， 然 后由被选择的第一位线 4e导出一个量值大于低临界值 /α而小于高临界值 /C2的写入电 流 (相应电流密度 JC2=105A/cm2， 电流 =电流密度 X金属芯截面积)， .由于写入电流产生的 磁场也呈环状分布， 因而可以操控闭合状磁性多层膜存储单元 65的比特层 （软磁层 4) 的磁化状态沿顺时针或逆时针方向取向， 使得比特层 (软磁层 4)与被钉扎磁性层 9的磁 化状态分别沿顺时针或逆时针方向相同或相反 （即磁化强度平行或反平行）， 从而获得 低电阻和高电阻两种状态 （即获得高输出电压和低输出电压两种状态）， 也就是通过控 制电流的方向就可以实现 MRAM的写操作。 当写入电流由第一位线 4e经由金属芯 6、 第一过渡金属层 4b、 接触孔 3b、 晶体管 0的源极 0b、 晶体管 0的漏极 0a、 接触孔 (3a) 到达地线 4a后， 闭合状磁性多层膜存储单元 65的比特层 （软磁层 4) 的磁化状态也随 即由写入电流所写入， 于是完成了 MRAM单元中数据的写入。 实施例 67
如图 11A— C所示， 磁性随机存取存储器存储单元阵列由大量的 MRAM单元组合 而成， 在一个 MRAM单元中， 包括一个闭合椭圆环状磁性多层膜存储单元 65、布置在 闭合椭圆环状磁性多层膜存储单元 65的几何中心的金属芯 6、 晶体管 0、第一过渡金属 层 4b、 地线 4 a、 接触孔 (3a、 3b、 3b2)和一组布线， 即位线 4c、第二字线 63、 第一字线 67以及地线 4a。闭合椭圆环状磁性多层膜存储单元 65和晶体管 0通过第一过渡金属层 4b及接触孔 3b相互连接。在布局上将位线 4e布置在闭合椭圆环状磁性多层膜存储单元 65的上方并且与闭合椭圆环状磁性多层膜存储单元 65直接相连。
该闭合椭圆环状磁性多层膜存储单元 65中的磁性多层膜的结构为在第二过渡金属 层 4f上依次沉积的厚度为 2nm的下部缓冲导电层 lTa， 厚度为 5nm的反铁磁钉扎磁性 层 8 IrMn, 厚度为 2nm的被钉扎磁性层（FM)9 CoFeB, 厚度为 0.8nm的中间层 (1)3 A1203，厚度为 lnm的软磁层（FM)4 CoFeB和厚度为 2nm的覆盖层 5Ta，椭圆环的短轴 内径为 lOOOnm, 短轴外径为 2000nm， 长轴内径为 5000nm， 长轴外径为 6000nm， 椭圆 环的短轴与长轴内径的比值为 1:5。布置在闭合椭圆环状磁性多层膜存储单元 65的几何 中心的金属芯 6为截面为椭圆形的 Au金属芯 6， 椭圆形短轴 500nm， 短边与长边的宽 度比值为 1:5。
如图 11B所示， 整个 MRAM单元由若干层 la、 lb、 lc、 ld、 If构成， 这些层中的 非功能区域由绝缘掩埋介质如 Si02等所掩埋。 在 MRAM单元中金属布线层仅有三层， 即位线 4c、第二过渡金属层 4f、 第一过渡金属层 4b， 闭合状磁性多层膜存储单元 65布 置在位线 4c下方并且其上部电极与位线 4c直接连接； 闭合状磁性多层膜存储单元 65 的下部电极通过第一过渡金属层 4b、 接触孔 3b、 接触孔 3d与晶体管 0的第一漏极 Obi 相连接； 布置在闭合状磁性多层膜存储单元 65的几何中心的金属芯 6与顶部的位线 4c 和底部的第二过渡金属层 4f直接连接； 晶体管 0由两个工作区组成， 两个工作区共用 同一个漏极 0al， 第一晶体管和第二晶体管的源极分别为 Obi和 0b2， 两个晶体管各自 的工作状态分别由布置在栅极上方的第一字线 67和第二字线 63所给出的电平来控制。
由此， 以图 11A、 11B所示的单元为例， 在 MRAM的寻址读出操作中， 首先由被 选择的第一字线 67给出一个适当的电平使晶体管 0的第一晶体管工作于导通状态， 然 后由被选择的位线 4c 导出一个量值小于低临界值 IC1的读出电流 (相应电流密度 Jc/=102A/cm2, 电流 =电流密度 X闭合状磁性多层膜截面积)， 则读出电流由位线 4c经由 闭合状磁性多层膜存储单元 65、 第二过渡金属层 4f、 接触孔 3b、 第一过渡金属层 4b、 接触孔 3b、 晶体管 0的第一源极 Obi、 晶体管 0的公共漏极 0al、接触孔 3a而到达地线 4a, 从而获得闭合状磁性多层膜存储单元 65 比特层 （软磁层 4) 当前的磁化状态， 即 MRAM单元中存储的数据； 在 MRAM的寻址写入操作中， 首先由被选择的第二字线 63给出一个适当的电平使晶体管 0 的第二晶体管工作于导通状态， 然后由被选择的位 线 4c导出一个量值大于低临界值 Icl而小于高临界值 IC2的写入电流 (相应电流密度 JC2=105A/cm2， 电流 =电流密度 X金属芯截面积)， 由于写入电流产生的磁场也呈环状分 布， 因而可以操控闭合状磁性多层膜存储单元 65的比特层（软磁层 4)的磁化状态沿顺 时针或逆时针方向取向， 使得比特层 (软磁层 4)与被钉扎磁性层 9的磁化状态分别沿顺 时针或逆时针方向相同或相反 （即磁化强度平行或反平行）， 从而获得低电阻和高电阻 两种状态 （即获得高输出电压和低输出电压两种状态）， 也就是通过控制电流的方向就 可以实现 MRAM的写操作。 当写入电流由位线 4c经由金属芯 6、 第一过渡金属层 4b、 接触孔 3b2、 晶体管 0的第二源极 0b2、 晶体管 0的公共漏极 0a、 接触孔 3a到达地线 4a后， 闭合状磁性多层膜存储单元 65的比特层 （软磁层 4) 的磁化状态也随即由写入 电流所写入， 于是完成了 MRAM单元中数据的写入。
值得注意的是， 本实施例中环状也可以是方形环、 矩形环、 三角形环、 六角形环、 五边形环， 本实施例中的磁性多层膜也可以是如前所述的其他结构。 另外， 环的尺寸、 芯的直径大小以及环所构成的材料均巳申请专利， 在此不一一赘述。

Claims

权利要求
1、 一种具有几何形状的磁性多层膜， 包括沉积在衬底上的常规的磁性多层膜的各 层， 其特征在于： 所述的磁性多层膜的横截面呈闭合的椭圆环形， 该磁性多层膜中的具 有铁磁性的薄膜层的磁失巨或磁通量形成顺时针或逆时针的闭合状态。
2、 如权利要求 1所述的具有几何形状磁性多层膜， 其特征在于： 所述的椭圆环形 的磁性多层膜的横截面的内环的短轴为 10〜100000nm， 短轴与长轴的比值为 1 : 1〜5， 椭圆外环的短轴为 20〜200000nm， 环宽在 10〜100000nm之间； 所述的短轴和长轴比 值为 1 : 1的椭圆环形即圆环形。
3、 如权利要求 1所述的磁性多层膜， 其特征在于： 所述的横截面呈闭合的椭圆环 形的磁性多层膜为无钉扎型的磁性多层膜， 包括缓冲导电层、 硬磁层、 中间层、 软磁层 及覆盖层；
所述的缓冲导电层由金属材料组成， 厚度为 2〜200nm;
所述的硬磁层由巨磁电阻效应的材料组成， 厚度为 2〜20 nm;
所述的中间层由非磁性金属层或者绝缘体势垒层构成，中间层的厚度为 0.5〜10nm; 所述的软磁层的组成材料为自旋极化率高， 矫顽力小的铁磁材料， 所述的软磁层的 厚度为 l〜20nm;
所述的覆盖层由不易被氧化的金属材料组成， 厚度为 2〜20 nm。
4、 如权利要求 3所述的磁性多层膜， 其特征在于：
所述的缓冲导电层的组成材料为 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al 或 Si-Al合金;.
所述的硬磁层的组成材料为 Co， Fe， Ni, CoFe, NiFeCo, CoFeB或 CoFeSiB; 所述的中间层的非磁性金属层为 Ti， Zn, ZnMn, Cr, Ru, Cu, V或 TiC; 所述的 中间层的绝缘体势垒层为 A1203， MgO, TiO， ZnO, (ZnMn)0, CrO， VO, 或 TiCO; 所述的软磁层的组成材料为 Co, Fe, Ni或它们的金属合金，该合金为 NiFe， CoFeSiB 或 NiFeSiB,或非晶 Co^-x-yFexBy，其中 0<x<100， 0<y < 20，或 Co2MnSi， Co2Cr0.6Feo.4Al; 所述的覆盖层的组成材料为 Ta、 Cu、 Ru、 Pt、 Ag、 Au、 Cr或其合金。
5、 如权利要求 1所述的磁性多层膜， 其特征在于： 所述的闭合形状的磁性多层膜 为钉扎型的磁性多层膜， 包括缓冲导电层、 反铁磁钉扎层、 被钉扎磁性层、 中间层、 软 磁层及覆盖层；
所述的缓冲导电层由金属材料组成， 厚度为 2〜200nm;
所述的反铁磁钉扎层由具有反铁磁性的合金组成， 厚度为 3〜30 nm;
所述的被钉扎磁性层的组成材料为具有高自旋极化率的铁磁性金属， 厚度为 2〜20 nm;
所述的中间层由非磁性金属层或者绝缘体势垒层构成，中间层的厚度为 0.5〜10nm; 所述的软磁层的组成材料为自旋极化率高、矫顽力小的铁磁材料，厚度为 l〜20nm; 所述的覆盖层由不易被氧化的金属材料组成， 厚度为 2〜20 nm。
6、 如权利要求 5所述的闭合形状的磁性多层膜， 其特征在于：
所述的缓冲导电层的组成材料为 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al 或 Si-Al合金；
所述的反铁磁钉扎层的组成材料为 IrMn, FeMn, PtMn, CrMn或 Pt (Cr, Mn)合 金；
所述的被钉扎磁性层的组成材料为 Fe、 Co, Ni或其合金；
所述的中间层的非磁性金属层为 Ti, Zn， ZnMn, Cr, Ru, Cu， V或 TiC; 所述的 中间层的绝缘体势垒层为 A1203， MgO, TiO, ZnO, (ZnMn)0, CrO, VO, 或 TiCO; 所述的软磁层的组成材料为 Co， Fe， Ni或它们的金属合金，或非晶 Co1CQ_x.yFexBy， 其中， 0<x<100， 0<y < 20, 或 NiFeSiB, 或 Heusler合金；
所述的覆盖层的组成材料为 Ta、 Cu、 Ru、 Pt、 Ag、 Au、 Cr或其合金。
7、 如权利要求 1所述的磁性多层膜， 其特征在于： 所述的闭合形状的磁性多层膜 为无钉扎型闭合环状的双中间层磁性多层膜， 包括： 缓冲导电层、 第一硬磁层、第一中 间层、 软磁层、 第二中间层、 第二硬磁层、 及覆盖层；
所述的缓冲导电层由金属材料组成， 厚度为 2〜200nm;
所述的第一和第二硬磁层由巨磁电阻效应大的材料组成， 厚度为 2〜20 nm;
所述的第一和第二中间层由非磁性金属层或者绝缘体势垒层构成， 中间层的厚度为 0.5〜 Onm;
所述的软磁层的组成材料为自旋极化率高， 矫顽力小的铁磁材料， 所述的软磁层的 厚度为 l〜20nm;
所述的覆盖层由不易被氧化的金属材料组成， 厚度为 2〜20 nm。
8、 如权利要求 7所述的磁性多层膜磁性存储单元， 其特征在于：
所述的缓冲导电层的组成材料为 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al 或 Si-Al合金；
所述的第一和第二硬磁层的组成材料为 Co， Fe, Ni, CoFe, NiFeCo, CoFeB 或 CoFeSiB;
所述的第一和第二中间层的非磁性金属层为 Ti， Zn， ZnMn, Cr, Ru, Cu， V或 TiC; 所述的中间层的绝缘体势垒层为 A1203， MgO, TiO, ZnO, (ZnMn)0, CrO, VO, 或 TiCO;
所述的软磁层的组成材料为 Co， Fe, Ni或它们的金属合金 NiFe， CoFeSiB, NiFeSiB, 或非晶 Co100-x-yFexBy , 其中 0<x<100， 0<y≤20, 或 Co2MnSi， Co2Cr0.6Fe0.4Al;
所述的覆盖层的组成材料为 Ta、 Cu、 Ru、 Pt、 Ag、 Au、 Cr或其合金。
9、 如权利要求 1所述的磁性多层膜， 其特征在于： 所述的闭合形状的磁性多层膜 为钉扎型闭合环状的双中间层磁性多层膜， 包括： 缓冲导电层、 第一反铁磁钉扎层、 第 一被钉扎磁性层、 第一中间层、 软磁层、 第二中间层、 第二被钉扎磁性层、 第二反铁磁 钉扎层及覆盖层；
所述的缓冲导电层由金属材料组成， 厚度为 2〜200nm;
所述的第一和第二反铁磁钌扎层由具有反铁磁性的合金组成， 厚度为 3〜30 nm; 所述的第一和第二被钉扎磁性层的组成材料为具有高自旋极化率的铁磁性金属，厚 度为 2〜20 nm;
所述的第一和第二中间层由非磁性金属层或者绝缘体势垒层构成， 中间层的厚度为 0.5〜10nm;
所述的软磁层的组成材料为自旋极化率高、矫顽力小的铁磁材料，厚度为 l〜20nm; 所述的覆盖层由不易被氧化的金属材料组成， 厚度为 2〜20 nm。
10、 如权利要求 9所述的磁性多层膜， 其特征在于：
所述的缓冲导电层的组成材料为 Ta、 Ru、 Cr、 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al 或 Si-Al合金；
所述的第一和第二反铁磁钉扎层的组成材料为 IrMn， FeMn, PtMn, CrMn或 Pt (Cr, Mn)合金；
所述的第一和第二被钉扎磁性层的组成材料为 Fe、 Co、 Ni或其合金；
所述的第一和第二中间层的非磁性金属层为 Ti， Zn, ZnMn, Cr, Ru, Cu， V或
TiC; 所述的中间层的绝缘体势垒层为 A1203， MgO, TiO, ZnO， (ZnMn)0, CrO, VO, 或 TiCO;
所述的软磁层的组成材料为 Co, Fe, M或它们的金属合金，或非晶 Co1(M).x_yFexBy， 其中， 0<x<100， 0<y < 20, 或 NiFeSiB， 或 Heusler合金；
所述的覆盖层的组成材料为 Ta、 Cu、 Ru、 Pt、 Ag、 Au、 Cr或其合金。
11、 一种制备权利要求 1所述的磁性多层膜的制作方法， 包括如下的步骤-
1 )选择一个衬底， 经过常规方法清洗之后， 在常规的薄膜生长设备上沉积下部缓 冲导电层；
2) 利用常规的薄膜生长手段， 在下部缓冲导电层上依次沉积磁性多层膜的各层； 在沉积磁性层时， 选择施加 50〜5000 Oe的平面诱导磁场；
3 )采用微加工工艺， 将步骤 2)得到的衬底上沉积了磁性多层膜的片基， 进行微加 工工艺加工成闭合形圆环或者椭圆环状结构；
所述的微加工工艺的具体步骤为： 首先经过涂胶、 前烘， 再在在紫外、 深紫外曝光 或电子束曝光机上， 根据所需的闭合状图形对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁'性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶；
4)在步骤 3 )得到的刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长 手段，沉积一层 100〜1000nm绝缘层，将各闭合环状多层膜进行掩埋并且相互隔离不同 的单元；
5)利用微加工工艺的紫外、 深紫外曝光或电子束曝光方法， 以及聚焦离子束刻蚀 或者化学反应干刻或化学反应湿刻，在沉积有闭合环状多层膜的位置上对绝缘层进行刻 蚀使绝缘层下掩埋的磁性多层膜暴露， 得到本发明的闭合形状的磁性多层膜。
12、 按权利要求 1、 3、 5、 7、 9所述的磁性多层膜， 其特征在于： 还包括一个位于 所述磁性多层膜的几何中心位置、 具有相应形状的横截面的金属芯。
13、 按权利要求 12所述的磁性多层膜， 其特征在于： 所述的椭圆形金属芯的短轴. 为 5〜50000nm， 椭圆形的短轴与长轴比值为 1 : 1〜5。
14、 如权利要求 13所述的包含金属芯的闭合形状的磁性多层膜， 其特征在于： 所 述的金属芯的材料为 Au、 Ag、 Pt、 Ta、 W、 Ti、 Cu、 Al或 Si-Al合金。
15、 一种制备权利要求 14所述的包含金属芯的闭合形状的磁性多层膜的方法， 包 括如下的步骤：
1 )选择一个衬底， 经过常规方法清洗之后， 在常规的薄膜生长设备上沉积下部缓 冲导电层， 该下部缓冲导电层在后续加工时成为导电电极；
2)利用常规的薄膜生长手段， 在下部缓冲导电层上依次沉积磁性多层膜的各层； 在沉积磁性层时， 选择施加 50〜5000 Oe的平面诱导磁场；
3 )采用微加工工艺和方法将步骤 2)中沉积了磁性多层膜的衬底加工成闭合形圆环 或者椭圆环状结构；
所述的微加工工艺的具体步骤为： 首先经过涂胶、 前供， 再在在紫外、深紫外曝光 或电子束曝光机上， 根据所需的闭合状图形对片基进行曝光， 接着显影、 定影、 后烘， 然后用离子刻蚀方法把磁性多层膜刻成闭合形状， 最后用去胶剂浸泡进行去胶；
4)在步骤 3 ) 得到的刻蚀成形的闭合形状的磁性多层膜上， 利用常规的薄膜生长 手段，沉积一层 100〜1000nm绝缘层将各闭合环状多层膜进行掩埋并且相互隔离不同的 早兀；
5)利用微加工工艺， 在闭合环状多层膜的几何中心位置制备一个金属芯， 该金属 芯的形状与闭合形状的磁性多层膜的形状相匹配， 其横截面为圆环形或椭圆形；
6)利用微加工工艺的紫外、 深紫外曝光或电子束曝光方法， 以及聚焦离子束刻蚀 或者化学反应干刻或化学反应湿刻，在沉积有闭合环状多层膜的位置上对绝缘层进行刻 蚀使绝缘层下掩埋的磁性多层膜暴露，得到本发明的包含金属芯的闭合形状的磁性多层 膜。
16、 一种权利要求 1、 3、 5、 7、 9所述的磁性多层膜磁性存储单元制作的磁性随机 存取存储器， 包括： '
晶体管单元构成的存储器读写控制单元阵列，该读写控制单元阵列集成在半导体衬 底中；
存储单元及其阵列； 连接上述晶体管单元和磁性多层膜存储单元的过渡金属层；
以及字线、位线和地线， 所述的字线同时也是所述的晶体管的栅极， 所述的位线布 置在所述的磁性多层膜存储单元的上方， 并与所述的字线相互垂直， 而且与所述的磁性 多层膜存储单元直接连接； 其特征在于： 所述的磁性多层膜存储单元为磁性多层膜的横 截面呈闭合的椭圆环形， 该闭合椭圆环形的横截面的内环短轴为 10〜100000nm， 短轴 与长轴的比值为 1 : 1〜5， 椭圆外环的短轴为 20〜200000nm， 环宽在 10〜100000nm之 间； 所述的短轴和长轴比值为 1 : 1的椭圆环形即圆环形。
17、一种权利要求 14所述的磁性多层膜磁性存储单元制作的磁性随机存取存储器， 包括：
晶体管 元构成的存储器读写控制单元阵列，该读写控制单元阵列集成在半导体衬 底中；
存储单元及其阵列;其特征在于:构成所述存储单元的磁性多层膜的几何中心位置、 具有相应形状的横截面的金属芯。
连接上述晶体管单元和闭合状含金属芯的磁性多层膜存储单元的过渡金属层； 以及字线和两条位线，所述的字线同时也是所述的晶体管的栅极，所述的两条位线 布置在所述的闭合状含金属芯的磁性多层膜存储单元的上方，其中第一条位线与所述的 字线相互垂直，并且与所述的闭合状含金属芯的磁性多层膜存储单元直接连接，第二条 位线与所述的闭合状含金属芯的磁性多层膜存储单元中的金属芯直接相连，并且由一层 绝缘层与第一条位线相互隔离。
18、 一种权利要求 14所述的包含金属芯的闭合状磁性多层膜的磁性随机存取存储 器， 包括：
第一和第二晶体管单元构成的存储器读写控制单元阵列，该读写控制单元阵列集成 在半导体衬底中； 第一晶体管开关控制读操作，第二晶体管开关控制写操作；第一晶体 管的栅极也作为第一字线， 第二晶体管的栅极也作为第二字线；
存储单元及其阵列;其特征在于:构成所述存储单元的磁性多层膜的几何中心位置、 具有相应形状的横截面的金属芯。
在晶体管共用漏极、第一晶体管的源极、第二晶体管的源极之上分别设置第一导电 接触孔、第二导电接触孔、第三导电接触孔，并且分别与及其上的过渡金属层各自连接； 第一接触孔之上的过渡金属层也同时构成所设置的地线；第四导电接触孔和第三过渡金 属层相连；该第三过渡金属层作为底部传导电极与所述的闭合状含金属芯的磁性多层膜 的下端相连，该闭合状含金属芯的磁性多层膜的上端设置位线并与之相连；所述的设置 在闭合状含金属芯的磁性多层膜中心处的金属芯上端与位线接触，下端与第一过渡金属 层连接； 第五绝缘层覆盖在位线上。
19、 一种权利要求 16所述的闭合状磁性多层膜的磁性随机存取存储器的存取存储 的方法， 其为通过流经存储单元 RML中的电流的大小和方向来实现 MRAM的读操作 和写操作， 具体如下：
通过控制流经闭合状磁性多层膜存储单元 RML中的电流， 当小于低临界值½ ， 其比特层磁化状态不会受到改变， 实现 MRAM的读操作， 所述比特层为软磁层； 通过控制流经闭合状磁性多层膜存储单元 RML中的电流， 当大于低临界值 /c /并 且小于高临界值 ½时， 电流的方向将会改变闭合状磁性多层膜存储单元 RML比特层 的磁化状态，通过正向和负向自旋极化隧穿电流，即通过极化隧穿电流诱导的环行磁场 的驱动作用和自旋转力矩的联合作用，实现其比特层的磁化状态沿顺时针或逆时针方向 取向，使得比特层与被钉扎磁性层或硬磁层的磁化状态分别沿顺时针或逆时针方向相同 或相反， 即磁化强度平行或反平行， 获得低电阻和高电阻两种状态， 即获得高输出电压 和低输出电压两种状态， 也就是通过控制电流的大小和方向就可以实现 MRAM的写操 作；
所述的低临界值 ½ =电流密度 Jci 闭合状磁性多层膜截面积， 电流密度 JC =10〜 102A/cm2;
所述的高临界值 IC2 =电流密度 Jc2X闭合状磁性多层膜截面积，电流密度 J =102〜 106A/cm
20、 一种权利要求 17所述的闭合状磁性多层膜的磁性随机存取存储器的存取存储 的方法， 其为通过对存储单元 R L中的金属芯施加的电流来实现 MRAM的写操作， 通过对存储单元 ML中的闭合状磁性多层膜施加的隧穿电流来实现 MRAM的读操作， 具体如下：
通过控制流经闭合状含金属芯的磁性多层膜存储单元的电流小于低临界值 Ici时， 其比特层的磁化状态不会受到改变， 实现 MRAM的读操作；
通过控制流经闭合状含金属芯磁性多层膜存储单元中的金属芯中的电流，由于电流 产生的磁场呈环状分布， 控制闭合状磁性多层膜的磁化状态， 实现 MRAM的写操作， 具体方法为： 当闭合状含金属芯磁性多层膜存储单元 RML中的金属芯中施加电流大于 低临界值 IC并且小于高临界值 IC2时，电流的方向将会改变闭合状磁性多层膜存储单元 比特层的磁化状态，通过正向和负向的驱动电流产生顺时针或逆时针方向的磁场，实现 其比特层的磁化状态沿顺时针或逆时针方向取向，使得比特层与被钉扎磁性层或硬磁层 的磁化状态分别沿顺时针或逆时针方向相同或相反，获得低电阻和髙电阻两种状态，也 就是通过控制电流的方向就可以实现 MRAM的写操作；
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