WO2007052796A1 - Module pour dispositif optique, procede de fabrication de ce module et structure du dispositif optique - Google Patents

Module pour dispositif optique, procede de fabrication de ce module et structure du dispositif optique Download PDF

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Publication number
WO2007052796A1
WO2007052796A1 PCT/JP2006/322121 JP2006322121W WO2007052796A1 WO 2007052796 A1 WO2007052796 A1 WO 2007052796A1 JP 2006322121 W JP2006322121 W JP 2006322121W WO 2007052796 A1 WO2007052796 A1 WO 2007052796A1
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WIPO (PCT)
Prior art keywords
effective pixel
optical device
translucent
solid
pixel region
Prior art date
Application number
PCT/JP2006/322121
Other languages
English (en)
Japanese (ja)
Inventor
Tohru Ida
Morihiro Kada
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2007052796A1 publication Critical patent/WO2007052796A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

Definitions

  • Optical device module optical device module manufacturing method, and structure
  • the present invention relates to an optical device module mounted as an imaging unit in an optical device, and a method for manufacturing the optical device module.
  • Patent Document 1 discloses an optical device module incorporated in a camera, that is, a camera module.
  • FIG. 9 is a cross-sectional view showing the structure of the camera module 100.
  • the camera module 100 includes an image sensor chip 101, a glass support substrate 102, and a lens 103.
  • the glass support substrate 102 is bonded and fixed on the light receiving surface 101 a of the image sensor chip 101.
  • the lens 103 is provided on the glass support substrate 102.
  • the light that has entered the lens 103 passes through the glass support substrate 102 and is condensed on the image sensor chip 101, and is converted into an electrical signal by the photoelectric conversion element formed on the light receiving surface 101a.
  • the glass supporting substrate 102 supports a thin image sensor chip 101 of about several hundreds / zm, and the image sensor chip 101 can be easily handled in the manufacturing process.
  • the camera module 100 further includes an electrode pad 106, a rewiring 107, and a bump electrode 108.
  • the electrode pad 106 is disposed on the surface of the image sensor chip 101 and is connected to an input / output circuit of the image sensor chip 101.
  • a rewiring 107 is formed from the back surface of the image sensor chip 101 to the electrode pad 106.
  • a bump electrode 108 serving as an external connection terminal is formed on a portion of the rewiring 107 exposed on the back surface of the chip.
  • a filter member 104 is attached to the curved surface of the lens 103.
  • the filter member 104 functions as a filter for blocking incident light in a predetermined wavelength region, specifically, an infrared cut filter.
  • a diaphragm member 105 is disposed on the filter member 104.
  • a camera module 100 that is small in size and low in manufacturing cost is realized by modularizing components such as a lens, an image sensor chip, and a glass support substrate.
  • Patent Document 1 Japanese Published Patent Publication “Japanese Unexamined Patent Publication No. 2004-226873 (Publication Date: August 12, 2004)”
  • Patent Document 2 Japanese Patent Publication “Japanese Patent Laid-Open No. 2004-296453 (Publication Date: October 21, 2004)”
  • a microlens array in which fine microlenses are formed in an array is provided in the effective pixel area of an image sensor chip (solid-state imaging device) for photoelectric conversion. It is indispensable to increase the light collecting property of the element.
  • the glass support substrate 102 is formed on the light receiving surface of the image sensor chip 101 by an adhesive. It is pasted directly. For this reason, when the above-mentioned conventional technology is applied to the image sensor chip 101 having fine microlenses formed on the surface, there is a problem that the microlenses are easily damaged in the manufacturing process.
  • the glass support substrate 102 is attached to the surface of the image sensor chip 101 with an adhesive in the manufacturing process. For this reason, when the above-described conventional technology is applied to the image sensor chip 101 on which fine microlenses are formed on the surface, the glass support substrate 102 comes into contact with the microphone opening lens when the glass support substrate 102 is attached. Cause damage. At this time, The periphery of the microlens formed on the surface of the chip 101 is filled with an adhesive.
  • the rewiring 107 is provided in the through hole 17 a extending from the back surface to the front surface of the image sensor chip 101.
  • the through hole is usually formed by deep etching from the back surface of the image sensor chip 101. In order to perform this deep etching, it is necessary to polish the back surface of the image sensor chip 101 with the glass support substrate 102 attached to the surface of the image sensor chip 101 to reduce the thickness of the chip.
  • the glass support substrate 102 is held and a mechanical force is applied to the image sensor chip 101 as in the above-described rear surface polishing, mechanical stress is applied to the microlens, and this mechanical This causes the problem of damage to the microlens due to mechanical stress.
  • the filter member 104 such as an infrared cut filter is attached to the curved surface of the force lens 103. For this reason, the entire surface of the filter is also curved, and depending on the incident angle of incident light, the predetermined filter performance determined at the time of designing the filter may not be sufficiently exhibited.
  • Electrode pad 106 is formed on the front surface, and bump electrode 108 is formed on the back surface through rewiring 107.
  • bump electrode 108 is formed on the back surface through rewiring 107.
  • the present invention has been made in view of the above problems, and an object of the present invention is a small module for an optical device including a solid-state imaging element including a microlens on a photoelectric conversion element, It is to realize a module for an optical device having a structure that can effectively prevent damage to a microlens in a manufacturing process.
  • a manufacturing method of a small module for an optical device having a solid-state imaging device in which a microlens is formed on a photoelectric conversion element and a manufacturing method with a high yield that effectively prevents damage to the microlens. There is to serve.
  • an optical device module has an effective pixel region including a microlens array, and an electrode pad is disposed outside the effective pixel region.
  • a solid-state imaging device having a light-transmitting property and a translucent covering material that has translucency and covers the effective pixel region, and the translucent covering material is connected to an output or input terminal of the solid-state imaging device. It is fixed to an area outside the effective pixel area in the solid-state imaging element through a fixing portion provided to embed an electrode pad, and the effective pixel area and the translucent covering material are separated from each other. It is characterized by that.
  • the solid-state imaging device and the translucent covering material are fixed in a state where the effective pixel region and the translucent covering material are separated by the action of the fixing portion. Is done.
  • covering material contacts the said micro lens array directly, and does not damage a micro lens array.
  • the fixing portion is, for example, an adhesive
  • the temperature of the fixing portion increases when the adhesive is solidified
  • no thermal stress is applied to the microlens array.
  • the solid-state imaging device is externally mechanically held while the translucent coating material is held. Even if a general force is applied, no mechanical stress is applied to the microlens array.
  • the electrode pad is also fixed to the solid-state image sensor by the action of the fixing portion in addition to its own coupling force to the solid-state image sensor. For this reason, according to the above configuration, it is possible to increase the bonding force of the electrode pad to the solid-state imaging device.
  • a through-hole extending from the back surface of the solid-state image sensor to the electrode pad in a state where the translucent covering material is fixed to the solid-state image sensor.
  • a manufacturing method of forming a rewiring in this through hole can be adopted.
  • the electrode pad is strongly coupled to the solid-state imaging device by the action of the fixing portion, according to the configuration, the electrode pad is prevented from being detached from the solid-state imaging device when a rewiring is formed. it can.
  • the optical device module may further include one or more lenses arranged on the subject side of the translucent covering material.
  • the distance between the effective pixel region and the translucent covering material is preferably 10 m or more.
  • the distance from the effective pixel region to the lower surface of the translucent covering material is 10 / zm or more. For this reason, even if dust adheres to the lower surface of the translucent coating material in the manufacturing process, the dust does not have an adverse effect on the optical characteristics of the effective pixel region.
  • the distance from the effective pixel region to the surface of the translucent coating material facing the lens (hereinafter referred to as the upper surface) is also greater than 10 m. Therefore, for the same reason as described above, even if dust adheres to the upper surface of the translucent covering material, this dust does not have an effective adverse effect on the optical characteristics of the effective pixel region.
  • the thickness of the translucent coating material is 300 ⁇ m or more.
  • the dust When dust adheres to the surface of the translucent coating material facing the lens (hereinafter referred to as the upper surface), the dust creates a shadow on the effective pixel area, and this shadow is reflected in the effective pixel area.
  • the included pixels are defective pixel areas.
  • the distance between the upper surface of the translucent covering material and the effective pixel region is increased, the range of the defective pixel region is widened, but the shadow is reduced, and the dust optically in the defective pixel region is reduced. The impact will be reduced.
  • the distance force from the effective pixel region to the upper surface of the translucent coating material is greater than S300 m. For this reason, even if dust adheres to the upper surface of the translucent covering material in the manufacturing process, the dust does not have an adverse effect on the optical characteristics of the effective pixel region.
  • the total of the separation between the effective pixel region and the translucent coating material, the thickness of the translucent coating material, and the thickness of the solid-state imaging element is preferably 600 ⁇ m or more and 800 ⁇ m or less.
  • the fixing portion surrounds the effective pixel region, and seals a space formed between the effective pixel region and the translucent covering material. preferable.
  • the space formed between the effective pixel region and the translucent covering material is sealed by the fixing portion, so that foreign matters such as dust enter the space from the outside. None do. Therefore, it is possible to prevent a foreign pixel entering from the outside from attaching to the microlens array and generating a defective pixel region.
  • the light-transmitting coating material is plate-shaped, and it is preferable that an optical filter be formed on the surface of the light-transmitting coating material.
  • the optical filter is formed on the surface of a plate-like translucent coating material that does not curve. Therefore, according to the above configuration, when the predetermined filter performance determined at the time of design can be realized with respect to incident light having an arbitrary incident angle, a further effect can be obtained.
  • the fixing portion includes a photosensitive adhesive.
  • the fixing portion since the fixing portion includes a photosensitive adhesive, the fixing portion can be formed with high accuracy and efficiency by using a photolithography technique. The effect which becomes.
  • the solid-state imaging device includes the electrode.
  • the surface force on the back side of the surface on which the node is disposed also reaches the electrode pad and is connected to the electrode pad, and the surface on the back side of the surface on which the electrode pad is disposed is connected to the rewiring. It is preferable to have an external connection terminal.
  • the electrical signal output from the output terminal of the image sensor is transmitted to the external connection terminal disposed on the back surface of the solid-state image sensor via the electrode pad and rewiring. Is done.
  • the method for manufacturing a module for an optical device has an effective pixel region including a microlens array, and an electrode pad is disposed outside the effective pixel region.
  • a first step of fixing a translucent coating material covering the semiconductor wafer to a semiconductor wafer formed by arranging a plurality of solid-state imaging devices and in the first step, the translucent coating material
  • the electrode pad connected to the output or input terminal of the solid-state image sensor is embedded in an area outside the effective pixel area of each solid-state image sensor included in the semiconductor wafer, separated from the effective pixel area. It is characterized in that it is fixed through a fixing part that is provided.
  • the solid-state imaging device and the translucent material are separated in a state where the effective pixel region and the translucent covering material are separated by the action of the fixing portion.
  • the light coating material is fixed.
  • covering material and the said solid-state image sensor can be fixed without damaging a micro lens array.
  • the fixing portion is, for example, an adhesive
  • the temperature of the fixing portion increases when the adhesive is solidified
  • thermal stress is not applied to the microlens array.
  • mechanical force is applied from the outside to the solid-state image sensor while holding the translucent coating material, for example, for polishing the back surface of the solid-state image sensor, mechanical stress is applied to the microlens array.
  • the electrode pad is fixed to the solid-state image sensor by the action of the fixing portion in addition to its own binding force to the solid-state image sensor. For this reason, according to the above configuration, there is an effect of increasing the coupling force of the electrode pad to the solid-state imaging device.
  • a manufacturing method may be employed in which a through hole is formed from the back surface of the solid-state imaging device to the electrode pad, and a rewiring is formed in the through hole.
  • a through hole is formed from the back surface of the solid-state imaging device to the electrode pad, and a rewiring is formed in the through hole.
  • the manufacturing method is arranged on the surface of the translucent coating material opposite to the surface facing the semiconductor wafer, corresponding to the arrangement of the solid-state imaging elements on the semiconductor wafer.
  • a second step of attaching a lens assembly plate composed of a plurality of lenses may be included.
  • the distance between the effective pixel region and the translucent covering material is preferably 10 m or more.
  • the distance from the effective pixel region to the lower surface of the translucent covering material is 10 / zm or more. For this reason, even if dust adheres to the lower surface of the translucent coating material in the manufacturing process, the dust does not have an adverse effect on the optical characteristics of the effective pixel region.
  • the distance from the effective pixel region to the surface of the translucent covering material facing the lens (hereinafter referred to as the upper surface) is also greater than 10 m. Therefore, for the same reason as described above, even if dust adheres to the upper surface of the translucent covering material, this dust does not have an effective adverse effect on the optical characteristics of the effective pixel region.
  • the cost for dust management in the manufacturing environment can be reduced.
  • the defect occurrence rate due to dust can be reduced, and the yield of the optical device module manufactured by the above manufacturing method can be further improved.
  • the translucent coating material preferably has a thickness of 300 m or more.
  • the dust When dust adheres to the surface of the translucent coating material facing the lens (hereinafter referred to as the upper surface), the dust creates a shadow on the effective pixel region, and this shadow is reflected in the effective pixel region.
  • the included pixels are defective pixel areas.
  • the distance between the upper surface of the translucent covering material and the effective pixel region is increased, the range of the defective pixel region is widened, but the shadow becomes thin, and the optical effect of the dust in the defective pixel region is reduced. Will reduce
  • the distance force S300 m from the effective pixel region to the upper surface of the translucent covering material is larger. For this reason, even if dust adheres to the upper surface of the translucent covering material in the manufacturing process, the dust does not have an adverse effect on the optical characteristics of the effective pixel region.
  • the separation between the effective pixel region and the translucent coating material, the thickness of the translucent coating material, and the solid-state imaging device is preferably 600 ⁇ m or more and 800 ⁇ m or less.
  • the cost for dust management in the manufacturing process of the optical device module is reduced without causing an increase in the size of the optical device module, and the optical device module adheres to the translucent coating material.
  • the fixing portion is formed so as to surround each effective pixel region, and each effective pixel region and the translucent coating are formed. It is preferable to seal the space formed between the materials.
  • the space formed between the effective pixel region and the translucent covering material is sealed by the fixing portion. Therefore, it is possible to prevent foreign matter such as external force dust from entering the space after the first completion. Even when the structure produced by the first step is exposed to a chemical solution, such as an etching process using a chemical solution, after the first step, according to the above configuration, the microlens by the chemical solution is used. If damage or contamination, or contamination of the translucent covering material by a chemical solution can be prevented, a further effect can be obtained.
  • the translucent coating material is plate-shaped and an optical filter is formed on the surface of the translucent coating material.
  • the optical filter 1 is formed on the surface of the plate-shaped translucent covering material without being curved. Therefore, according to the above configuration, it is possible to manufacture an optical device module including an optical filter that realizes a predetermined filter performance determined at the time of design for incident light having an arbitrary incident angle. Play.
  • the fixing portion preferably includes a photosensitive adhesive.
  • the fixing portion includes a photosensitive adhesive
  • the fixing portion is formed with high accuracy using a photolithography technique, and the solid-state imaging device and the translucent coating material are formed. It has the further effect that it can be efficiently fixed.
  • each solid-state imaging device included in the semiconductor wafer reaches the electrode pad from the surface behind the surface on which the electrode pad is arranged.
  • a rewiring connected to the electrode pad; and an external connection terminal disposed on the back side of the surface on which the electrode pad is disposed and connected to the rewiring.
  • the solid-state imaging device is provided.
  • the fixing part is preferably formed so as to embed the electrode pad.
  • the electrical signal output from the output terminal of the image sensor is used as an external connection terminal disposed on the back surface of the solid-state image sensor via the electrode pad and rewiring. It is possible to manufacture a module for an optical device which can be transmitted to
  • the size of the translucent coating material is larger than the size of the semiconductor wafer.
  • the semiconductor wafer in the manufacturing process, the semiconductor wafer can be prevented from being damaged by coming into contact with an external obstacle.
  • the structure according to the present invention has an effective pixel region including a microlens array, and a solid-state imaging in which an electrode pad is disposed outside the effective pixel region
  • the above optical device module can be manufactured by dividing the above structure into individual pieces.
  • the module for an optical device includes a solid-state imaging device having an effective pixel region having a microlens array, and a translucent coating that has translucency and covers the effective pixel region.
  • the translucent covering material is fixed to an area outside the effective pixel area in the solid-state imaging device via a fixing portion, and the effective pixel area and the translucent covering material are separated from each other. Therefore, at least the translucent coating material is in direct contact with the microlens array and does not damage the microlens array. Further, it is possible to prevent thermal stress or mechanical stress from being applied to the microlens array in the manufacturing process of the optical device module.
  • the fixing portion is provided so as to embed the electrode pad connected to the output or input terminal of the solid-state image sensor, the electrode pad is applied to the solid-state image sensor. Coupling force can be increased, and for example, when the rewiring leading to the electrode pad is formed, the electrode pad can be prevented from being separated from the solid-state imaging device force.
  • the manufacturing method of the module for an optical device according to the present invention is as described above. Including a first step of fixing a translucent covering material covering the semiconductor wafer to a semiconductor wafer formed by arranging a plurality of solid-state imaging devices having an effective pixel region having a lens array, and the first step Then, the translucent covering material is fixed to a region outside the effective pixel region in each solid-state imaging device included in the semiconductor wafer via a fixing unit, apart from the effective pixel region.
  • the solid-state imaging device and the solid-state imaging device can be fixed without damaging the microlens array. Further, in the process following the first step, it is possible to prevent thermal stress or mechanical stress from being applied to the microlens array.
  • the fixing portion is also provided so as to embed the electrode pad connected to the output or input terminal of the solid-state imaging device, so that the electrode pad is applied to the solid-state imaging device. Coupling force can be increased, and for example, when the rewiring leading to the electrode pad is formed, the electrode pad can be prevented from being separated from the solid-state imaging device force.
  • FIG. 1 is a cross-sectional view showing a configuration of an optical device module according to an embodiment of the present invention.
  • FIG. 2 is a top view showing a configuration of a module for an optical device according to an embodiment of the present invention.
  • FIG. 3 is a perspective view showing a configuration of an optical device module according to an embodiment of the present invention.
  • FIG. 4 is an explanatory diagram for explaining the outline of the method for manufacturing the module for an optical device according to the embodiment of the present invention.
  • FIG. 5 (a) is a top view of a translucent plate material and a semiconductor wafer, showing a pattern of a light-sensitive adhesive in the method for manufacturing an optical device module according to the embodiment of the present invention.
  • FIG. 5 (b) is a cross-sectional view of a light-sensitive adhesive plate and a semiconductor wafer, showing a pattern of a light-sensitive adhesive in a method for manufacturing an optical device module according to an embodiment of the present invention.
  • FIG. 5 (c) shows another pattern of the photosensitive adhesive in the method for manufacturing the module for an optical device according to the embodiment of the present invention, and is a cross-sectional view of a translucent plate material and a semiconductor wafer. is there. 6 (a)] A pattern of a photosensitive adhesive in the method for manufacturing a module for an optical device according to an embodiment of the present invention, showing a translucent plate and a top view of a semiconductor wafer.
  • FIG. 6 (b)] shows a pattern of a light-sensitive adhesive in the method for manufacturing a module for an optical device according to an embodiment of the present invention, and is a cross-sectional view of a translucent plate material and a semiconductor wafer.
  • FIG. 6 (c)] is a sectional view of the light-sensitive adhesive material and the semiconductor wafer, showing another pattern of the photosensitive adhesive in the method for manufacturing the module for an optical device according to the embodiment of the present invention. .
  • FIG. 7 (a)] shows a step of forming a rewiring and an external connection terminal in the method for manufacturing a module for an optical device according to an embodiment of the present invention, and shows an upper surface of a translucent plate material and a semiconductor wafer.
  • ⁇ 7 (b)] shows a step of forming rewiring and external connection terminals in the method for manufacturing an optical device module according to the embodiment of the present invention, and shows a cross section of a translucent plate material and a semiconductor wafer FIG.
  • ⁇ 7 (c)] shows a step of forming a rewiring and an external connection terminal in the method for manufacturing a module for an optical device according to an embodiment of the present invention, and shows a cross section of a translucent plate material and a semiconductor wafer FIG.
  • ⁇ 7 (d)] shows a step of forming the rewiring and the external connection terminal in the method for manufacturing the module for an optical device according to the embodiment of the present invention, and shows a cross section of the translucent plate material and the semiconductor wafer.
  • FIG. 7 (e)] shows a step of forming a rewiring and an external connection terminal in the method for manufacturing a module for an optical device according to an embodiment of the present invention, and shows a bottom surface of a light-transmitting plate and a semiconductor wafer.
  • FIG. 8 (a)] shows the structure of a structure including a translucent plate, a semiconductor wafer, and a lens assembly plate in the method for manufacturing an optical device module according to an embodiment of the present invention.
  • 1 is a cross-sectional view of a structure including a light plate, a semiconductor wafer, and a lens assembly plate.
  • FIG. 9 is a cross-sectional view showing a configuration of a camera module, which is a conventional module for an optical device.
  • One embodiment of the module for an optical device according to the present invention is based on Figs.
  • V is as follows.
  • FIG. 1 is a cross-sectional view of an optical device module 1 according to the present embodiment
  • FIG. FIG. 2 is a top view of the module 1 for academic equipment
  • FIG. 3 is a perspective view of the module 1 for the optical device.
  • the cross-sectional view shown in FIG. 1 shows a cross section of the optical device module 1 along the line XX, as shown in FIGS.
  • the optical device module 1 includes a solid-state imaging device 11, a translucent lid 12 (a translucent covering material), and a lens 13.
  • the solid-state image sensor 11 has a rectangular effective pixel area including a photoelectric conversion element in the vicinity of a central portion of a surface (hereinafter referred to as an upper surface) facing a translucent lid portion 12 described later. 11a.
  • the effective pixel region 11a includes a plurality of photoelectric conversion elements such as photodiodes corresponding to a plurality of pixels, and converts the light received by each photoelectric conversion element into an electrical signal and outputs it.
  • the effective pixel region 11a includes a microlens array l ib that covers the surface of the effective pixel region 11a and includes a plurality of microlenses arranged in an array. As a result, the light incident on the effective pixel region 11a can be converted into electric power by the photoelectric conversion element with high light collection efficiency.
  • the translucent lid 12 is a plate-like glass, and covers the effective pixel region 11a as shown in FIG.
  • the translucent lid 12 is bonded and fixed to the solid-state imaging device 11 via an adhesive portion 14 (fixing portion) in a state of being separated from the effective pixel region 11a.
  • the translucent lid 12 is not limited to plate-like glass, but may be a translucent covering material, that is, a transparent member that has translucency and covers the effective pixel region 11a.
  • An air layer 15 is formed between the translucent lid 12 and the effective pixel region 11a.
  • a photosensitive adhesive can be used as the bonding portion 14.
  • the bonding portion 14 can be formed by photolithography.
  • the bonding portion 14 is formed on the outer peripheral region 11c outside the effective pixel region 11a and surrounding the effective pixel region 11a shown in FIG. 2, and the translucent lid 12 and the effective pixel region 11a Air layer 15 (space) between is sealed.
  • the lens 13 has a configuration for refracting incident light so as to form an image of a subject on the effective pixel region 11a.
  • the lens 13 is supported by a lens frame 13a integrated with the lens 13, and the image formation distance of the lens 13 and the optical distance between the lens 13 and the effective pixel region 11a coincide with each other. Is held in.
  • the light incident on the lens 13 is transmitted through the translucent lid. Is transmitted through the unit 12 and the air layer 15 and collected on the effective pixel region 11a of the solid-state imaging device 11, and converted into an electric signal by the photoelectric conversion element formed on the effective pixel region 11a.
  • the optical device module 1 further includes an electrode pad 16, a rewiring 17, and an external connection terminal 18.
  • the electrode pad 16 is disposed in the outer peripheral region 11c of the solid-state image sensor 11, and is connected to an input / output circuit of the solid-state image sensor.
  • the solid-state image sensor 11 is provided with a rewiring 17 extending from the back surface of the solid-state image sensor 11 to the electrode pad 16. Further, an external connection terminal 18 is formed on a portion of the rewiring 17 exposed on the back surface of the solid-state imaging device 11. As a result, the electric signal generated by the photoelectric conversion element in the effective pixel region 11a can be taken out from the external connection terminal 18 provided on the back surface of the solid-state imaging element 11.
  • the electrode pad 16 is embedded in the bonding portion 14 described above. Accordingly, it is possible to prevent the electrode pad 16 from being detached from the solid-state image sensor 11 when rewiring is formed from the back surface of the solid-state image sensor 11. A method for forming the rewiring 17 will be described later.
  • the optical device module 1 further includes an optical filter 19.
  • the optical filter 19 is a filter that blocks incident light in a specific wavelength region, for example, an infrared cut filter that blocks infrared rays.
  • the optical filter 19 is formed on a translucent lid portion 12 formed in a plate shape. Therefore, unlike the case where the optical filter 19 is attached to the lens 13 having a curved surface, the optical filter 19 is capable of receiving incident light of a specific wavelength with a predetermined performance determined at the time of design. Can be cut off.
  • the optical filter 19 is a force applied to the upper surface of the translucent lid 12, that is, the surface facing the lens 13. Is not limited to this. That is, the optical filter 19 may be configured to be attached to the lower surface of the translucent lid portion 12, that is, the surface facing the effective pixel region 11a. When the optical filter 19 is attached to the lower surface of the translucent lid 12, damage to the optical filter 19 and adhesion of dust can be effectively prevented in the manufacturing process described later.
  • a diaphragm member having a window portion in the center may be provided on the upper surface or the lower surface of the translucent lid portion 12.
  • the optical filter 19 and the diaphragm member may be provided at the same time.
  • the optical device module 1 the solid-state imaging device 11, the translucent lid 12, and the separation between the translucent lid 12 and the effective pixel region 11a, that is, the air layer 15
  • the thickness will be further explained.
  • the thickness of the solid-state imaging device 11 is h3 and the thickness of the translucent lid 12 is h2.
  • the thickness of the air layer 15 is hi.
  • the lower surface of the translucent lid 12 and the effective pixel region The distance hi between 1 la is preferably 10 m or more. Furthermore, if the distance hi between the lower surface of the translucent lid 12 and the effective pixel region 11a is 20 m or more, dust adhering to the lower surface of the translucent lid 12 enters the light receiving state of the effective pixel region 11a. The impact can be further reduced.
  • the thickness h2 of the translucent lid 12 is preferably 300 ⁇ m or more. At this time, the distance between the upper surface of the transparent lid 12 and the effective pixel region 11a is at least 300 m or more. Therefore, it is possible to prevent dust attached to the upper surface of the translucent lid 12 from having an effective influence on the light receiving state of the effective pixel region 11a. Furthermore, if the thickness h2 of the translucent lid 12 is 400 m or more, the influence of dust attached to the upper surface of the translucent lid 12 on the light receiving state of the effective pixel region 11a can be further reduced.
  • the total hl + h2 + h3 of the thickness hl of the air layer 15, the thickness h2 of the light-transmitting lid 12 and the thickness h3 of the solid-state imaging device 11 is 600 / zm or more and 800 m or less. It's better! By setting the total thickness to 600 m or more and 800 m or less, it is possible to prevent the optical device module 1 from being damaged during the process transfer without causing an increase in the size of the optical device module 1.
  • the total thickness is 700 m to 800 m
  • the total thickness is 650 ⁇ m to 750 ⁇ m
  • the total thickness is 600 ⁇ m or more. It should be 700 ⁇ m or less.
  • FIG. 4 is an explanatory diagram showing an outline of a method for manufacturing the optical device module 1 according to the present embodiment.
  • the semiconductor wafer 21 and the translucent plate 22 are fixed.
  • the semiconductor wafer 21 is an aggregate of solid-state image sensors in which a plurality of solid-state image sensors are arranged in an array. Since each individual image pickup device in the semiconductor wafer 21 has the same configuration as that of the solid-state image pickup device 11 described above, the description thereof is omitted here, and the constituent members of the individual image pickup devices are members of the constituent members of the solid-state image pickup device 11. Reference with the same part number as the number. In addition, on the surface of the semiconductor wafer 21 on which the effective pixel region 11a of each individual image sensor 1 is formed, the electrode pad 16 is formed in advance, and the electrode pad 16 and the output terminal of the solid-state image sensor 11 are electrically connected. Keep it.
  • the translucent plate 22 is glass formed in a plate shape, and the one obtained by dividing the glass into the size of the solid-state imaging device 11 corresponds to the translucent lid 12.
  • the translucent plate material 22 is not limited to plate-like glass, and any transparent member that covers the semiconductor wafer 21 is sufficient.
  • twenty three Including a step (first step) of bonding and fixing via the (fixing portion).
  • Battering of the photosensitive adhesive 23 and the process of solidifying the photosensitive adhesive 23 and bonding and fixing the semiconductor wafer 21 and the translucent plate 2 2 are well known as photolithography techniques. It can be performed by each process such as development. Thereby, the position of the fixed portion and the height of the fixed portion (that is, the distance between the translucent lid portion 12 and the effective pixel region 11a) in the optical device module 1 can be adjusted with high accuracy.
  • the transparent plate member 22 fixed to the thin semiconductor wafer 21 functions as a wafer support in the manufacturing process of the module for an optical device.
  • the semiconductor wafer 21 can be transported without being damaged, and the back surface of the semiconductor wafer 21 can be polished as will be described later.
  • the size of the translucent plate 22 is preferably set larger than the size of the semiconductor wafer 21, for example, 0.1 to 2 mm larger than the size of the semiconductor wafer 21. As a result, it is possible to prevent the semiconductor wafer 21 from coming into contact with external obstacles and being damaged in the manufacturing process, particularly the manufacturing process after the process of polishing the back surface of the semiconductor wafer 21 described later.
  • the photosensitive adhesive 23 may be applied to the light transmissive plate 22 side, or may be applied to the semiconductor wafer 21 side. Therefore, the case where the photosensitive adhesive 23 is applied to the translucent plate 22 will be described with reference to FIG. 5, and the case where the photosensitive adhesive 23 is applied to the semiconductor wafer 21 will be described with reference to FIG. While explaining.
  • FIG. 5 is a view for explaining the patterning of the photosensitive adhesive 23 when the photosensitive adhesive 23 is applied to the translucent plate 22.
  • Fig. 5 (a) is a top view of the translucent plate 22 and the semiconductor wafer 21
  • Fig. 5 (b) is a cross-sectional view of the translucent plate 22 and the semiconductor wafer 21 along the Y-Y 'cross section
  • FIG. 5C is a cross-sectional view of the light-transmitting plate 22 and the semiconductor wafer 21 taken along the line YY ′ for showing another patterning of the photosensitive adhesive 23.
  • the photosensitive adhesive 23 is bonded to a lattice-like region including a scribe line corresponding to the boundary 21a of the solid-state imaging element 11 on the semiconductor wafer 21 after bonding. 23 is applied so as not to contact each effective pixel region 11a. Further, as shown in FIG. 5 (c), the photosensitive adhesive 23 is an area excluding the lattice area force scribe line directly above. You may apply to.
  • FIG. 6 is a diagram for explaining the patterning of the photosensitive adhesive 23 when the photosensitive adhesive 23 is applied to the semiconductor wafer 21.
  • FIG. 6 (a) is a top view of the translucent plate 22 and the semiconductor wafer 21
  • FIG. 6 (b) is a cross-sectional view of the translucent plate 22 and the semiconductor wafer 21 in the Y-Y 'cross section
  • FIG. (c) is a cross-sectional view of the light-transmitting plate 22 and the semiconductor wafer 21 taken along the line YY ′, showing another patterning of the photosensitive adhesive 23.
  • the photosensitive adhesive 23 is applied to the grid-like region including the boundary 21a of the solid-state imaging element 11 on the semiconductor wafer 21 so as not to contact each effective pixel region 11a. It is. Further, as shown in FIG. 6 (c), the photosensitive adhesive 23 may be applied to a region excluding the scribe line from the lattice region.
  • the electrode pad 16 is embedded in the photosensitive adhesive 23 both when the patterning shown in FIG. 5 is adopted and when the patterning shown in FIG. 6 is adopted. Therefore, even when the photosensitive adhesive 23 is solidified or annealed, even if the fixing portion made of the photosensitive adhesive 23 is slightly deformed, the sealing of the air layer 15 by the photosensitive adhesive 23 is broken. That It can be effectively prevented.
  • the thickness of the photosensitive adhesive 23 is preferably set to have a thickness of 10 m or more after solidification, and is more preferably set to have a thickness of 20 m or more after solidification. Is preferable. By setting the thickness of the photosensitive adhesive 23 in this way, even if dust adheres to the translucent plate 22, the optical device module that does not effectively affect the light receiving state of the effective pixel area 1 la. 1 can be manufactured.
  • the pattern of the photosensitive adhesive 23 is not limited to that described above, and at least the area outside the effective pixel area 11a of each individual image sensor 11 included in the semiconductor wafer 21 and the translucent plate 22 are included. Any material can be used as long as it is fixed via the photosensitive adhesive 23.
  • the photosensitive adhesive 23 preferably further has flame retardancy.
  • V-0 By manufacturing the optical device module 1 using a photosensitive adhesive having flame retardancy as the photosensitive adhesive 23, V-0 can be confirmed, for example, in a flame retardant test in accordance with UL-94. It is possible to provide the optical device module 1 that passes the flammability test. Such an optical device module 1 can be suitably used for an optical device that is supposed to be used in a high temperature environment.
  • the photosensitive adhesive 23 is used as a fixing portion for fixing the semiconductor wafer 21 and the translucent plate member 22.
  • the present invention is not limited to this. Absent. That is, for example, a sheet-like photosensitive film can be patterned by photolithography, and the semiconductor wafer 21 and the translucent plate 22 can be fixed using this as a fixing part. It is also possible to print and form the fixed part using a print mask.
  • the back surface of the semiconductor wafer 21 is polished.
  • the backside polishing of the semiconductor wafer 21 is a process for thinning the semiconductor wafer 21 to a thickness of several tens / z m to several hundreds / z m.
  • the back surface of the semiconductor wafer 21 is polished using, for example, a back grinder, using the translucent plate 22 as a wafer support.
  • the thickness of the semiconductor wafer 21 after polishing is such that the through-hole 17a leading to each electrode pad 16 can be formed in a practical time without technical trouble by the back surface force of the semiconductor wafer 21. If so, good.
  • the semiconductor wafer 21 and the wafer support are used. Mechanical stress is applied between the translucent plate 22. However, since the semiconductor wafer 21 and the translucent plate 22 are fixed via the photosensitive adhesive 23 in the area outside the effective pixel area 11a, this mechanical stress is applied to the microscopic area on the effective pixel area 11a. It does not affect the lens array l ib. Therefore, the microlens array 1 lb is not damaged in this process.
  • FIG. 7 (a) is a top view of the structure composed of the semiconductor wafer 21 and the translucent plate 22, and FIGS. 7 (b) to 7 (d) show Y—Y ′ of the structure.
  • FIG. 7 (e) is a bottom view showing the state of the bottom surface of the structure after the external connection terminals 18 are formed.
  • through-holes 17a reaching the respective electrode pads 16 are formed by deep etching as well as the back surface force of the semiconductor wafer 21.
  • the through hole 17a may be formed by reactive ion etching that is generally performed.
  • an insulating film is formed on the inner wall of the through hole 17a after the through hole 17a is formed.
  • the insulating film may be formed by plasma CVD.
  • a conductive layer composed of a noria layer such as TaN, a Cu seed layer, and Cu plating is formed, and then a through hole 17a and a rewiring 17 are formed on the back surface of the wafer by photolithography and etching.
  • a protective film is formed on the back side of the semiconductor wafer 21, and an external connection terminal 18 is formed at a part where a part of the protective film is opened and the rewiring 17 is exposed so as to be electrically connected to the part.
  • the electrode pad 16 also presses the rewiring 17 with the surface side force of the semiconductor wafer 21, thereby preventing the rewiring 17 from being exposed to the surface side of the semiconductor wafer 21.
  • the electrode pad 16 since the electrode pad 16 is embedded in the solidified translucent adhesive 23 as described above, the electrode pad 16 does not release the surface force of the semiconductor wafer 21.
  • the external connection terminals 18 are arranged in the periphery of the back surface of each solid-state imaging element 11 included in the semiconductor wafer 21, but in addition to these external connection terminals 18, each individual imaging element is further provided.
  • the external connection terminal 18a may be arranged at the center of the back surface of 1.
  • the external connection terminals 18a arranged in the center of these are the above-mentioned external terminals arranged in the periphery.
  • it may be electrically connected to the output or input terminal of the solid-state imaging device 11, or may be a dummy terminal. In this way, FIG.
  • FIG. 7 (d) shows a cross-sectional view of the semiconductor wafer 21 with external connection terminals formed on the entire back surface of each individual image pickup device 11 included in the semiconductor wafer 21, and FIG. Shown in (e).
  • FIG. 7 (e) by arranging the external connection terminals 18 and 18a in a well-balanced manner on the entire back surface of the solid-state imaging device 11, when mounting the optical device module 1 on the optical device, the optical device module Thermal stress or mechanical stress applied to 1 can be effectively dispersed to prevent the optical device module 1 from being damaged.
  • a step (second step) of fixing the lens assembly plate 24 to the structure composed of the semiconductor wafer 21 and the translucent plate 22 is performed.
  • the lens assembly plate 24 has a plurality of lens forces arranged corresponding to the arrangement of the solid-state imaging elements 11 on the semiconductor wafer 21.
  • each lens included in the lens assembly plate 24 has the same structure as the lens 13 described above.
  • the lens assembly plate 24 is aligned and transparent so that the center of each lens included in the lens assembly plate 24 and the center of the effective pixel region 11a of each solid-state imaging device 11 included in the semiconductor wafer 21 are aligned. Bonded and fixed to the optical plate 22.
  • FIG. 8 shows a structure 25 composed of a semiconductor wafer 21, a translucent plate member 22, and a lens assembly plate 24 obtained by completing the process of fixing the lens assembly plate 24.
  • FIG. 8 (a) is a top view of the structure 25
  • FIG. 8 (b) is a sectional view showing a Y-Y 'cross section of the structure
  • the structure 25 including the semiconductor wafer 21, the translucent plate 22 and the lens assembly plate 24 is replaced with, for example, a dicing saw 26 or the like.
  • the above-described individual optical device modules 1 are formed by dividing into individual pieces using.
  • the module for an optical device according to the present invention is used as an imaging means mounted on the optical device.
  • it is suitable for use in a small optical device such as a camera-equipped mobile phone.
  • a camera module for in-vehicle use or medical equipment.
  • OPIC Optical IC: registered trademark.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Filters (AREA)

Abstract

Cette invention concerne la réalisation d'un module pour dispositif optique doté d'une structure empêchant une microlentille d'être endommagée au cours de la fabrication. A cette fin, on utilise pour le dispositif optique un module (1) équipé d'un élément de saisie d'image transistorisé (11) comprenant une région d'image effective (11a) avec ensemble de microlentille (11b), et un couvercle transparent (12) recouvrant la région d'image effective (11a). Le couvercle transparent (12) est fixé sur la partie extérieure de la région d'image effective (11a) de l'élément transistorisé de saisie d'image (11) au moyen d'une partie adhésive (14), la région d'image effective (11a) étant séparée du couvercle transparent (12). De plus, la partie adhésive (14) comprend une pastille-électrode disposée en dehors de la région d'image effective (11a).
PCT/JP2006/322121 2005-11-07 2006-11-06 Module pour dispositif optique, procede de fabrication de ce module et structure du dispositif optique WO2007052796A1 (fr)

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JP2005-322687 2005-11-07
JP2005322687A JP2007129164A (ja) 2005-11-07 2005-11-07 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体

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US8456560B2 (en) * 2007-01-26 2013-06-04 Digitaloptics Corporation Wafer level camera module and method of manufacture
JP2009010261A (ja) * 2007-06-29 2009-01-15 Fujikura Ltd 半導体パッケージおよびその製造方法
KR100959922B1 (ko) 2007-11-20 2010-05-26 삼성전자주식회사 카메라 모듈 및 그 제조방법
TWI402979B (zh) 2007-12-13 2013-07-21 Sharp Kk 電子元件晶圓模組、電子元件模組、感測器晶圓模組、感測器模組、透鏡陣列盤、感測器模組之製造方法、及電子資訊裝置
JP4800291B2 (ja) * 2007-12-13 2011-10-26 シャープ株式会社 センサモジュールの製造方法および電子情報機器の製造方法
JP4891214B2 (ja) * 2007-12-13 2012-03-07 シャープ株式会社 電子素子ウエハモジュール、電子素子モジュール、センサウエハモジュール、センサモジュール、レンズアレイ板、センサモジュールの製造方法および電子情報機器
TW200937642A (en) * 2007-12-19 2009-09-01 Heptagon Oy Wafer stack, integrated optical device and method for fabricating the same
FR2931587B1 (fr) * 2008-05-21 2011-05-13 Commissariat Energie Atomique Procede de realisation d'un dispositif optique a composants optoelectroniques integres
JP4764941B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4768060B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4819152B2 (ja) * 2008-09-25 2011-11-24 シャープ株式会社 光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4764942B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP5165524B2 (ja) * 2008-10-10 2013-03-21 シャープ株式会社 ウエハスケールレンズ、ウエハスケールモジュール、および、電子機器
JP5498684B2 (ja) 2008-11-07 2014-05-21 ラピスセミコンダクタ株式会社 半導体モジュール及びその製造方法
US9419032B2 (en) 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
JP5010661B2 (ja) * 2009-09-30 2012-08-29 株式会社東芝 電子機器および電子機器の製造方法
US8388793B1 (en) * 2011-08-29 2013-03-05 Visera Technologies Company Limited Method for fabricating camera module

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