WO2007032281A1 - GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 - Google Patents
GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 Download PDFInfo
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- WO2007032281A1 WO2007032281A1 PCT/JP2006/317881 JP2006317881W WO2007032281A1 WO 2007032281 A1 WO2007032281 A1 WO 2007032281A1 JP 2006317881 W JP2006317881 W JP 2006317881W WO 2007032281 A1 WO2007032281 A1 WO 2007032281A1
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- Prior art keywords
- light
- gan
- layer
- emitting element
- active layer
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Classifications
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133621—Illuminating devices providing coloured light
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Definitions
- GaN-based semiconductor light emitting device GaN-based semiconductor light emitting device, light emitting device, image display device, planar light source device, and liquid crystal display device assembly
- the present invention relates to a GaN-based semiconductor light-emitting device, and a light-emitting device, an image display device, a planar light source device, and a liquid crystal display device assembly incorporating the GaN-based semiconductor light-emitting device.
- GaN-based semiconductor light-emitting device having an active layer that also has gallium nitride (GaN) -based compound semiconductor power
- the band gap energy is controlled by the mixed crystal composition and thickness of the active layer.
- GaN-based semiconductor light-emitting elements that emit various colors are already on the market and are used in a wide range of applications such as image display devices, illumination devices, inspection devices, and disinfection light sources.
- Semiconductor lasers and light emitting diodes (LEDs) that emit blue-violet light have also been developed, and are used as pickups for writing and reading large capacity optical disks.
- GaN-based semiconductor light-emitting elements are known to shift their emission wavelength to the short wavelength side when the drive current (operating current) increases.
- the drive current is changed from 20 mA to 100 mA.
- the calorific value is increased, a shift in emission wavelength of 3 nm in the blue emission region and 19 nm in the green emission region has been reported (eg NSPB500S NSPB500S (See NSPG500 S product specification of Nya-Asia Engineering Co., Ltd.).
- the phenomenon of the shift of the emission wavelength and the phenomenon caused by the increase of the drive current (operating current) is particularly composed of a GaN-based compound semiconductor containing In atoms having an emission wavelength longer than that of visible light. This is a problem common to the active layer. Localization of carriers due to In atoms in the well layer constituting the active layer (for example, Y. Kawakami, et al "J. Phys. Condens. Matter 13 (2001) pp. 6993) and internal electric field effect due to lattice mismatch (see SF Chichibu, Materials Science and Engineering B59 (1999) pp.298). ing.
- Japanese Patent Laid-Open No. 2002-237619 discloses light emission in which the emission wavelength changes by changing the current value.
- a light emission color control method for a light emitting diode is disclosed in which a plurality of colors are emitted by supplying a pulse current having a plurality of peak current values to the diode.
- Japanese Patent Laid-Open No. 2003-22052 discloses a drive circuit for a light emitting element that drives a plurality of light emitting elements that are driven simultaneously.
- the driving circuit of the light emitting element includes a light emission wavelength correction unit that corrects a variation in light emission wavelength between the plurality of light emitting elements by controlling a current supplied to the light emitting element, and a luminance variation between the plurality of light emitting elements.
- Light emission luminance correction means for correcting.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-237619
- Patent Document 2 Japanese Patent Laid-Open No. 2003-22052
- Patent Document 3 Japanese Translation of Special Publication 2003-520453
- Non-Patent Document 1 Nichia Engineering Co., Ltd. Product Specification NSPB500S
- Non-Patent Document 2 Nichia Engineering Co., Ltd. Product Specification NSPG500S
- Non-patent literature 3 Y. Kawakami, et al, J. Phys. Condens. Matter 13 (2001) pp. 6993
- Non-patent literature 4 SF Chichibu, Materials Science and Engineering B59 (1999) pp.298
- Non-patent literature 5 Nikkei Electronics December 20, 2004 No. 889, page 128 Disclosure of Invention
- a GaN-based semiconductor light-emitting element having a blue emission wavelength
- a GaN-based semiconductor light-emitting element having a green emission wavelength
- an AlInGaP system having a red emission wavelength
- the display image is rough due to the shift of the emission wavelength of each light-emitting diode.
- the emission wavelength of the light-emitting element shifts and the emission wavelength is different from the desired emission wavelength. Totsu In such a case, there is a problem that the color reproduction range after adjustment becomes narrow.
- a light emitting device comprising a GaN-based semiconductor light emitting element and a color conversion material (for example, a light emitting device that emits white light by combining ultraviolet or blue light emitting diodes and phosphor particles)
- the luminance of the light emitting device When the drive current (operating current) of the GaN-based semiconductor light-emitting element is increased tl to increase (brightness), the color-converting material is excited. Efficiency may change, chromaticity may change, and it may be difficult to obtain a light-emitting device with uniform hue.
- a liquid crystal display device having a backlight using a GaN-based semiconductor light emitting element has been proposed.
- a liquid crystal display device in order to increase the brightness (brightness) of the knock light.
- the color reproduction range becomes narrow or changes due to the shift of the emission wavelength in the GaN semiconductor light emitting device.
- GaN-based semiconductor light-emitting elements In order to reduce the cost and increase the density (high definition) of lighting devices, knocklights, displays, etc. using GaN-based semiconductor light-emitting elements, the size of the light-emitting elements is reduced to the conventional 300 m square. The force that needs to be further reduced from a size such as 1 mm or 1 mm, and the same operating current value results in a higher operating current density, and a shift in emission wavelength at a higher operating current density becomes a problem.
- GaN-based semiconductor light-emitting elements can be applied to display devices in which minute light-emitting elements are arranged. It is important to reduce the shift in the emission wavelength of such minute light-emitting elements in terms of application to display devices. It is.
- the above-mentioned patent application publication only shows a calculation example in which the composition of the barrier layer is changed in stages, and does not specifically show asymmetry and its effect. Furthermore, the above-mentioned patent application publication or the above-mentioned document does not disclose any technology for suppressing a large shift in the emission wavelength even when the operating current density is increased.
- an object of the present invention is to provide a GaN-based semiconductor having a structure capable of suppressing a large shift in emission wavelength accompanying an increase in operating current density, and also capable of performing a wider range of luminance control.
- LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE INCLUDING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE, IMAGE DISPLAY DEVICE, SURFACE LIGHT SOURCE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE ASSEMBLY
- a GaN-based semiconductor light-emitting device of the present invention is
- an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer;
- a GaN-based semiconductor light emitting device comprising:
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- a light-emitting device of the present invention includes a GaN-based semiconductor light-emitting element, and light emitted from the GaN-based semiconductor light-emitting element is incident, and the light emitted from the GaN-based semiconductor light-emitting element has A light emitting device comprising a color conversion material that emits light having a wavelength different from the wavelength,
- GaN-based semiconductor light-emitting elements GaN-based semiconductor light-emitting elements
- an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer;
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- examples of the light emitted from the GaN-based semiconductor light emitting element include visible light, ultraviolet light, and a combination of visible light and ultraviolet light.
- the emitted light of the GaN-based semiconductor light emitting element force is blue, and the emitted light of the color conversion material force is selected from the group consisting of yellow, green, and red. Further, it can be configured to be at least one kind of light.
- (ME: Eu) S [where “ME” means at least one atom selected from the group force consisting of Ca, Sr and Ba, The same applies to the following.] (M: Sm) (Si, Al) (O, N) [where “M” is Li, Mg and Ca x 12 16
- Group force means at least one selected atom, and the same applies to the following.] M E Si N: Eu, (Ca: Eu) SiN, (Ca: Eu) AlSiN. GaN-based
- green light emitting phosphor particles As a color conversion material that is excited by blue light emitted from a semiconductor light emitting element and emits green, specifically, green light emitting phosphor particles, more specifically, (ME: Eu) Ga S, (ME: Eu) Ga S, (ME: Eu)
- yellow light emitting phosphor particles more specifically, YAG (yttrium.aluminum). .Garnet) -based phosphor particles.
- the color conversion material may be one kind or a mixture of two or more kinds. Furthermore, by using a mixture of two or more types of color conversion materials, it is possible to adopt a configuration in which emitted light of a color other than yellow, green, and red is emitted from the color conversion material mixture.
- green phosphor particles for example, LaPO: Ce, Tb, BaMgAl 2 O: Eu, Mn, Zn SiO: Mn, MgAl 2 O 3 : Ce
- Tb, Y SiO: Ce, Tb, MgAl 2 O: CE, Tb, Mn) and blue-emitting phosphor particles for example,
- the emission wavelength shifts little with increasing operating current density, but by defining the well layer density, the light emission efficiency is improved and the threshold current is reduced. Can be expected.
- red-emitting phosphor particles more specifically, YO: Eu, YVO: Eu, Y (P,
- a color conversion material that emits green light that is excited by ultraviolet light that is emitted from a semiconductor light emitting device, specifically, green-emitting phosphor particles, and more specifically, LaPO
- Tb BaMgAl 2 O: Eu, Mn, Zn SiO: Mn, MgAl 2 O: Ce, Tb, Y SiO: Ce, T
- blue-emitting phosphor particles As a color conversion material that emits blue light that is excited by ultraviolet light that is emitted from an N-based semiconductor light-emitting element, specifically, blue-emitting phosphor particles, more specifically, BaMgAl
- the color conversion material may be one kind or a mixture of two or more kinds.
- a mixture of two or more color conversion materials it is possible to adopt a configuration in which emitted light of a color other than yellow, green, and red is emitted from the color conversion material mixture.
- a structure emitting cyan light may be used, and a mixture of the above-mentioned green light emitting phosphor particles and blue light emitting phosphor particles may be used.
- the color conversion material is not limited to fluorescent particles.
- fluorescent particles For example, nanometer-sized CdSe / ZnS or nanometer-sized silicon and multicolor / high-efficiency light-emitting particles using the quantum effect are used. It is known that rare earth atoms added to semiconductor materials emit light sharply due to intra-shell transitions, and it is necessary to mention light emitting particles to which such a technique is applied.
- the light emitted from the GaN-based semiconductor light-emitting element and the light emitted from the color conversion material can be mixed to emit white light.
- the color conversion material for example, yellow; red and green; yellow and Red, green, yellow, and red
- the present invention is not limited to this, and variable color illumination and display applications are also possible.
- An image display device for achieving the above object is an image display device including a GaN-based semiconductor light-emitting element for displaying an image,
- the GaN-based semiconductor light-emitting element is a GaN-based semiconductor light-emitting element.
- A an IGaN-based compound semiconductor layer having an n-type conductivity type
- B an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- the image display device for example, an image display device having the configuration and structure described below can be cited.
- the number of GaN-based semiconductor light-emitting elements constituting the image display device or the light-emitting element panel may be determined based on specifications required for the image display device. Further, based on the specifications required for the image display device, a configuration in which a light bulb is further provided can be adopted.
- Each of the GaN-based semiconductor light-emitting elements emits light.
- the light-emitting state of the GaN-based semiconductor light-emitting element is displayed directly.
- Type image display device
- a projection-type image display device of noble matrix type or active matrix type that displays the image by controlling the light emission Z non-light emission state of each GaN-based semiconductor light-emitting element and projecting it onto the screen.
- a red light-emitting element panel in which semiconductor light-emitting elements emitting red light (for example, AlGalnP-based semiconductor light-emitting elements and GaN-based semiconductor light-emitting elements; the same applies hereinafter) are arranged in a two-dimensional matrix;
- a green light emitting device panel in which GaN-based semiconductor light emitting devices emitting green light are arranged in a two-dimensional matrix, and
- a color display image display device for controlling the light emission Z non-light emission state of each of a red light emitting semiconductor light emitting element, a green light emitting GaN semiconductor light emitting element, and a blue light emitting GaN semiconductor light emitting element.
- Light passage control device that is a kind of light 'valve for controlling the passage of Z light that is emitted from GaN-based semiconductor light-emitting elements
- LED digital micromirror devices
- LCOS Liquid Crystal On Silicon
- An image display device (direct view type or projection type) that displays an image by controlling the passage Z non-passage of the light emitted from the GaN-based semiconductor light emitting element by the light passage control device.
- the number of GaN-based semiconductor light-emitting elements can be one or more as long as it is determined based on specifications required for the image display device.
- means (light guiding member) for guiding the emitted light emitted from the GaN-based semiconductor light emitting element to the light passage control device a light guiding member, a microlens array, a mirror or a reflecting plate, a condensing lens Can be illustrated.
- An image display device (direct view type or projection type) that displays an image by controlling the passage Z non-passage of the light emitted from the GaN-based semiconductor light emitting element by the light passage control device.
- a red light emitting element panel in which semiconductor light emitting elements emitting red light are arranged in a two-dimensional matrix, and a red light for controlling the passage of Z light passing through the light emitted from the red light emitting element panel.
- Passage control device (light 'bulb'),
- Green light-emitting element panel in which GaN-based semiconductor light-emitting elements emitting green light are arranged in a two-dimensional matrix, and the passage of emitted light emitted from the green light-emitting element panel for controlling Z non-passage Green light passage control device (light bulb),
- a blue light emitting element panel in which GaN-based semiconductor light emitting elements emitting blue light are arranged in a two-dimensional matrix, and a blue light for controlling the passage of Z light that is emitted from the blue light emitting element panel.
- Light passage control device (light 'bulb'),
- ( ⁇ ) means for collecting light that has passed through the red light passage control device, the green light passage control device, and the blue light passage control device into one optical path;
- a color display image display device (direct view type or projection type) that displays an image by controlling the passage of light emitted from these light emitting element panels by the light passage control device.
- a field sequential color display image display device (direct view type or projection type) that displays an image by controlling whether light emitted from these light emitting elements is passed or not through a light passage control device.
- a field sequential color display image display device (direct view type or projection type) that displays images by controlling the passage of light emitted from these light emitting element panels by the light passage control device.
- Type direct view type or projection type
- the image display apparatus for achieving the above object includes a first light emitting element that emits blue light, a second light emitting element that emits green light, and a first light emitting element that emits red light.
- An image display device in which light-emitting element units configured to display color images, which are composed of three light-emitting elements, are arranged in a two-dimensional matrix,
- the GaN-based semiconductor light-emitting element constituting at least one of the first light-emitting element, the second light-emitting element, and the third light-emitting element is: (A) an IGaN-based compound semiconductor layer having an n-type conductivity type,
- an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer;
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- an image display apparatus having the configuration and structure described below can be cited.
- the number of light emitting element units may be determined based on specifications required for the image display device. Further, based on the specifications required for the image display device, a configuration in which a light bulb is further provided can be adopted.
- Each of the first light emitting element, the second light emitting element, and the third light emitting element controls the non-light emitting Z state and displays an image by projecting it onto the screen, a noisy matrix type or active matrix type projection.
- Type color display image display device.
- a light passage control device for controlling the passage of light Z emitted from the light emitting element units arranged in a two-dimensional matrix, and the first light emitting element and the first light emitting element in the light emitting element unit.
- the light-emitting Z and non-light-emitting states of the two light-emitting elements and the third light-emitting element are controlled in a time-sharing manner, and the light emitted from the first light-emitting element, the second light-emitting element, and the third light-emitting element by the light passage control device Passing Z Non-passing control displays the image by a field sequential color display image display device (direct view type ⁇ ⁇ Is a projection type).
- a planar light source device of the present invention for achieving the above object is a planar light source device that irradiates a transmissive or transflective liquid crystal display device with back force,
- the GaN-based semiconductor light-emitting element as the light source provided in the planar light source device is
- an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer;
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- the liquid crystal display device assembly of the present invention for achieving the above object is a transmissive type! / ⁇ is a transflective liquid crystal display device, and a planar light source for irradiating the liquid crystal display device from the back side
- a liquid crystal display device assembly including a device,
- the GaN-based semiconductor light-emitting element as the light source provided in the planar light source device is
- an active layer having a multiple quantum well structure comprising a well layer and a barrier layer separating the well layer and the well layer;
- the well layer density on the active layer side of the first IGaN compound semiconductor layer is d, and the second GaN system is used.
- the density of the well layer on the compound semiconductor layer side is d, so that d ⁇ d is satisfied.
- the well layer is arranged.
- the light source is a first light emitting element that emits blue light, and emits green light.
- the present invention is not limited to this.
- the light source in the planar light source device can also be configured as one or a plurality of light emitting device powers of the present invention.
- each of the first light emitting element, the second light emitting element, and the third light emitting element may be one or plural.
- the light source is the first light emitting element, the second light emitting element, and the third light source.
- the light emitting element at least one (one type) of the first light emitting element, the second light emitting element, and the third light emitting element is constituted by a GaN-based semiconductor light emitting element.
- any one of the first light-emitting element, the second light-emitting element, and the third light-emitting element has a GaN-based semiconductor light-emitting element power, and the remaining two types of light-emitting elements have other structures.
- any one of the first light-emitting element, the second light-emitting element, and the third light-emitting element is composed of a GaN-based semiconductor light-emitting element
- the remaining one type of light emitting element may be composed of semiconductor light emitting elements having other configurations, or all light emitting elements of the first light emitting element, the second light emitting element, and the third light emitting element. You may be comprised.
- An example of a semiconductor light emitting device having another configuration is an AlGalnP semiconductor light emitting device that emits red light.
- planar light source device of the present invention or the planar light source device in the liquid crystal display device assembly of the present invention has two types of planar light source devices (backlights), that is, for example, Japanese Utility Model Laid-Open No. 63-1871 20 N directly-type planar light source device disclosed in Japanese Patent Application Laid-Open No. 2002-277870, and edge light type (also called side light type) planar light source device disclosed in, for example, Japanese Patent Application Laid-Open No. 2002-131552 It can be.
- edge light type also called side light type planar light source device disclosed in, for example, Japanese Patent Application Laid-Open No. 2002-131552 It can be.
- the number of GaN-based semiconductor light-emitting elements is essentially arbitrary, and may be determined based on specifications required for the planar light source device.
- the first light emitting element, the second light emitting element, and the third light emitting element are arranged facing the liquid crystal display device, and the liquid crystal display device and the first light emitting device are arranged.
- a diffusion plate, a diffusion sheet, a prism sheet, a polarization conversion sheet, an optical function sheet group, and a reflection sheet are arranged between the 1 light-emitting element, the second light-emitting element, and the third light-emitting element.
- a semiconductor light emitting element that emits red light for example, wavelength 640nm
- a GaN-based semiconductor that emits green light for example, wavelength 530nm
- a body light emitting device and a GaN-based semiconductor light emitting device that emits blue light may be arranged and arranged in a housing, but is not limited thereto.
- a light emitting element array including a red light emitting semiconductor light emitting element, a green light emitting GaN semiconductor light emitting element, and a blue light emitting GaN semiconductor light emitting element is defined as a horizontal screen of the liquid crystal display device.
- a plurality of the light emitting element array can be formed in a row in the direction, and a plurality of the light emitting element arrays can be arranged in the vertical direction of the screen of the liquid crystal display device.
- a light emitting element array (one red light emitting semiconductor light emitting element, one green light emitting GaN semiconductor light emitting element, one blue light emitting GaN semiconductor light emitting element), (one red light emitting semiconductor light emitting element) , 2 green light emitting GaN-based semiconductor light emitting devices, 1 blue light emitting GaN based semiconductor light emitting device), (2 red light emitting semiconductor light emitting devices, 2 green light emitting GaN based semiconductor light emitting devices, 1 blue light emitting device)
- a plurality of combinations such as a GaN-based semiconductor light emitting device) can be given.
- a light emitting element that emits a fourth color other than red, green, and blue may be further provided.
- the GaN-based semiconductor light emitting element may be provided with, for example, a light extraction lens as described on page 128 of Nikkei Electronics, No. 889, December 20, 2004.
- a light guide plate is disposed opposite to the liquid crystal display device, and a GaN-based semiconductor light emitting element is disposed on a side surface (first side surface described below) of the light guide plate.
- the light guide plate includes a first surface (bottom surface), a second surface (top surface) facing the first surface, a first side surface, a second side surface, a third side surface facing the first side surface, and a second side surface. It has an opposing fourth side.
- a wedge-shaped truncated quadrangular pyramid shape can be cited as a whole.
- two opposing side surfaces of the truncated quadrangular pyramid correspond to the first surface and the second surface.
- the bottom of the truncated quadrangular pyramid corresponds to the first side.
- the surface portion of the first surface (bottom surface) is provided with a convex portion and Z or a concave portion.
- Light is incident from the first side surface of the light guide plate, and light is emitted from the second surface (top surface) toward the liquid crystal display device.
- the second surface of the light guide plate may be smooth (that is, may be a mirror surface), or a blast texture with a diffusion effect may be used. It may be provided (that is, it can be a fine uneven surface).
- the first surface (bottom surface) of the light guide plate is provided with a convex portion and Z or a concave portion. That is, it is desirable that the first surface of the light guide plate is provided with a convex portion, or a concave portion, or an uneven portion. When the uneven portion is provided, the recessed portion and the protruding portion may be continuous or discontinuous.
- the convex portion and the Z or concave portion provided on the first surface of the light guide plate are configured as a continuous convex portion and Z or concave portion extending along a direction forming a predetermined angle with the light incident direction to the light guide plate. be able to.
- a triangle is formed as a continuous convex or concave cross-sectional shape when the light guide plate is cut in a virtual plane perpendicular to the first surface in the light incident direction to the light guide plate;
- Any smooth curve can be exemplified, including any square including square, rectangle, trapezoid; any polygon; circle, ellipse, parabola, hyperbola, force tenery, and the like.
- the direction forming a predetermined angle with the light incident direction on the light guide plate means a direction of 60 degrees to 120 degrees when the light incident direction on the light guide plate is 0 degrees. The same applies to the following.
- the convex portions and Z or concave portions provided on the first surface of the light guide plate are discontinuous convex portions and Z or concave portions extending along a direction that forms a predetermined angle with the light incident direction to the light guide plate.
- a discontinuous convex shape or concave shape a pyramid, a cone, a cylinder, a polygonal column including a triangular column or a quadrangular column, a part of a sphere, a part of a spheroid, a rotation
- Various smooth curved surfaces such as a part of a parabola and a part of a rotating hyperbola can be illustrated.
- a convex portion or a concave portion may not be formed on the peripheral portion of the first surface. Furthermore, the light emitted from the light source cover and incident on the light guide plate collides with a convex portion or a concave portion formed on the first surface of the light guide plate and is scattered, but is provided on the first surface of the light guide plate.
- the height, depth, pitch, and shape of the convex or concave portions may be constant or may be changed as the distance from the light source is increased. In the latter case, for example, the pitch of the convex part or the concave part may be increased with increasing light source power.
- the pitch of the convex portion or the pitch of the concave portion means the pitch of the convex portion or the pitch of the concave portion along the light incident direction to the light guide plate.
- a planar light source device including a light guide plate
- a liquid crystal display device is arranged facing the second surface of the light guide plate .
- Light source power The emitted light enters the light guide plate from the first side surface of the light guide plate (for example, the surface corresponding to the bottom surface of the truncated quadrangular pyramid), collides with the convex portion or concave portion of the first surface, and is scattered.
- the first surface force is emitted, reflected by the reflecting member, incident on the first surface again, emitted from the second surface, and illuminates the liquid crystal display device.
- a diffusion sheet or a prism sheet may be disposed between the liquid crystal display device and the second surface of the light guide plate.
- the light source power may be guided directly to the light guide plate or indirectly to the light guide plate. In the latter case, for example, an optical fiber may be used.
- the light guide plate is made of a material strength light guide plate that does not absorb much light emitted from the light source.
- a material constituting the light guide plate for example, glass, plastic material (for example, PMMA, polycarbonate resin, acrylic resin, amorphous polypropylene resin, styrene containing AS resin) Can be mentioned.
- a transmissive color liquid crystal display device includes, for example, a front panel having a transparent first electrode, a rear panel having a transparent second electrode, and a front panel and a rear panel. Liquid crystal material arranged in
- the front panel is, for example, a first substrate made of, for example, a glass substrate or a silicon substrate, and a transparent first electrode (also called a common electrode) provided on the inner surface of the first substrate.
- a transparent first electrode also called a common electrode
- the front panel has a color filter coated with an overcoat layer made of acrylic resin, epoxy resin on the inner surface of the first substrate, and a transparent first electrode on the overcoat layer. It has a formed configuration.
- An alignment film is formed on the transparent first electrode. Examples of the color filter arrangement pattern include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangular arrangement.
- the rear panel more specifically includes, for example, a glass substrate or a second substrate that also has a silicon substrate force, a switching element formed on the inner surface of the second substrate, and a conduction Z by the switching element.
- a transparent second electrode also called a pixel electrode, which is made of, for example, ITO
- An alignment film is formed on the entire surface including the transparent second electrode.
- Various members constituting these transmissive color liquid crystal display devices can be composed of well-known members and materials. wear.
- switching elements include three-terminal elements such as MOS FETs and thin film transistors (TFTs) formed on a single crystal silicon semiconductor substrate, and two-terminal elements such as MIM elements, varistor elements, and diodes.
- the emission wavelength of the active layer when the operating current density is 30 AZcm 2 (nm)
- the active layer emission wavelength when the operating current density is lAZcm 2 is ⁇ (nm) and the operating current density is 30 AZcm 2.
- the emission wavelength of the active layer when the operating current density is 300 AZcm 2 (n)
- the emission wavelength of the active layer is ⁇ (nm) and the operating current density is 300 AZcm 2 .
- the active layer emission wavelength when the operating current density is lAZcm 2 is ⁇ (nm) and the operating current density is 30 AZcm 2.
- the emission wavelength of the active layer when the operating current density is 300 AZcm 2 (n)
- a light emitting wavelength of a semiconductor light emitting element is also changed by heat generation or temperature change during characteristic measurement. Therefore, in the present invention, characteristics at approximately room temperature (25 ° C.) are targeted. If the GaN-based semiconductor light-emitting element itself generates little heat, there is no problem with driving with direct current, but if the heat generation is large, the temperature of the GaN-based semiconductor light-emitting element itself (junction region) It is necessary to adopt a measurement method that does not change significantly from room temperature!
- the wavelength of the power peak in the spectrum is targeted.
- the operating current density of the GaN-based semiconductor light-emitting element is a value obtained by dividing the operating current value by the active layer area (bonding region area).
- the operating current density (unit: ampere / cm 2 ) obtained by dividing such a driving current value, which is not the driving current value itself, by the active layer area (junction area). It expresses with.
- the thickness of the well layer is made constant, and the thickness of the barrier layer is varied (specifically, on the second GaN compound semiconductor layer side in the active layer).
- the thickness of the barrier layer is preferably configured to be thinner than the thickness of the barrier layer on the IGaN-based compound semiconductor layer side, but the thickness of the barrier layer is not limited to this, Different well layer thicknesses (specifically, the second GaN compound semiconductor in the active layer)
- the thickness of the well layer on the layer side may be made thicker than the thickness of the well layer on the IGaN compound semiconductor layer side, or both the thickness of the well layer and the thickness of the barrier layer may be different. It may be configured.
- the well layer density d and the well layer density d are defined as follows. Immediately
- the active layer of total thickness t is divided into two in the thickness direction, the first IGaN compound semiconductor layer
- the thickness of the active layer first region AR which is the active layer region on the side, t, and the second GaN compound semiconductor
- the number of well layers included in the active region first region AR is WL (a positive number, limited to an integer).
- WL positive number, integer
- the active layer If there is one well layer (thickness t) straddling 1 2 1 and the active layer second region AR, the active layer
- the number of well layers included only in one area AR is included in WL and the second area AR in the active layer only.
- the number of well layers to be wrapped is WL 'and straddles the active layer first region AR and the active layer second region AR.
- the thickness included in the active layer first region AR in the well layer is the thickness t, and the active layer second region AR
- the well layer density d and the well layer density d are obtained from the following formulas (11) and (12).
- the total thickness of the active layer is t, and the IGaN system is formed in the active layer.
- the total thickness of the active layer is t
- the density of the well layer in 0 1 is d, the activity from the interface on the second GaN compound semiconductor layer side to the thickness (t Z2)
- the well layer may be arranged, or the total active layer thickness is t, and the active layer has an active force up to the IGaN-based compound semiconductor layer side interface force thickness (t Z3).
- the well layer in the active layer can be arranged as follows.
- the well layer in the active layer is disposed.
- such an arrangement can be realized by making the thickness of the barrier layer non-uniform.
- the thickness of the barrier layer in the active layer is set to the side force of the IGaN-based compound semiconductor layer. It can be realized by changing it toward the second GaN compound semiconductor layer side (for example, by changing it in multiple steps, or changing it in three steps or more). More specifically, for example, a structure in which the thickness of the barrier layer in the active layer is decreased stepwise toward the second GaN compound semiconductor layer side, for example, may be adopted.
- the thickness of the barrier layer located closest to the second GaN-based compound semiconductor layer is 20 nm or less.
- the barrier layer located closest to the IGaN-based compound semiconductor layer side It is preferable to change the thickness of the barrier layer in the active layer, for example, stepwise so that the thickness is at least twice the thickness of the barrier layer located closest to the second GaN compound semiconductor layer. Yes.
- the active layer contains indium atoms, more specifically, Al Ga In N (however,
- Examples of the first IGaN compound semiconductor layer and the second GaN compound semiconductor layer include a GaN layer, an AlGaN layer, an InGaN layer, and an AlInGaN layer. Furthermore, these compound semiconductor layers may contain boron (B) atoms, thallium (T1) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms.
- the number of well layers (WL) in the active layer is preferably 2 or more, and preferably 4 or more.
- the GaN-based semiconductor light-emitting device includes:
- an undoped Ga N-based compound semiconductor layer is formed between the active layer and the superlattice structure layer, and the thickness of the undoped GaN-based compound semiconductor layer is 10 It is preferable that it is Onm or less.
- the total thickness of the superlattice structure layer is preferably 5 nm or more.
- the superlattice structure period in the superlattice structure layer is preferably 2 atomic layers or more and 20 nm or less.
- the concentration of the p-type dopant contained in the superlattice structure layer is preferably 1 ⁇ 10 18 / cm 3 to 4 ⁇ 10 2 ° / cm 3 .
- the thickness of the underlayer is 20 nm or more.
- a semiconductor layer is formed, and the thickness of the undoped GaN-based compound semiconductor layer is preferably 50 nm or less.
- the underlayer and the active layer contain In, the In composition ratio in the underlayer is 0.005 or more, and can be configured to be lower than the In composition ratio in the active layer.
- the underlayer can be configured to contain an n-type dopant of 1 ⁇ 10 16 Zcm 3 to 1 ⁇ 10 21 / cm 3 .
- the GaN-based compound semiconductor layer constituting the active layer is composed of an undoped GaN-based compound semiconductor.
- the n-type impurity concentration of the GaN-based compound semiconductor layer constituting the active layer is 2 X 10 It is preferably less than 17 Zcm 3 .
- the short side of the active layer including the various preferences, forms, and configurations described above, the short side of the active layer
- a certain ridge has a short diameter (when the planar shape of the active layer is circular or elliptical) and the length is 0.1 mm or less, preferably 0.03 mm or less. Doing power S.
- the planar shape of the active layer has a shape that cannot be defined by a short side or a short diameter, such as a polygon, the diameter of the circle when assuming a circle having the same area as the area of the active layer is “short”. It is defined as “diameter”.
- the GaN-based semiconductor light-emitting device of the present invention has a remarkable effect of reducing the shift of the emission wavelength particularly in a GaN-based semiconductor light-emitting device having a smaller size that can reduce the shift of the emission wavelength particularly at a high operating current density. Therefore, by applying the present invention to a GaN-based semiconductor light-emitting device having a size smaller than that of a conventional GaN-based semiconductor light-emitting device, a low-cost, high-density (high-definition) GaN-based semiconductor light-emitting device and its use V, An image display device can be realized.
- a 32-inch high-definition television receiver (1920 X 1080 X RGB), which is a general television receiver, is realized by arranging such GaN-based semiconductor light-emitting elements in a matrix, sub-pixels are used.
- the size of one pixel (pixel) that is a combination of a red light emitting element, green light emitting element, and blue light emitting element corresponding to is approximately 360 m square, and each subpixel has a long side of 300 ⁇ m and a short side of 100 ⁇ m.
- the size of 1 inch or less is desired in terms of optical design and cost. Even if a dichroic prism is used to make a three-plate system, a general DVD solution In order to achieve an image size of 720 x 480 with a diagonal size of 1 inch, the size of the GaN-based semiconductor light-emitting element must be 30 m or less.
- the short side (minor axis) to 0.1 mm or less, more preferably 0.03 mm or less, the emission wavelength shift in such a dimensional region is reduced. It can be significantly reduced compared with the semiconductor light emitting devices, and the practical application range is widened, making it extremely useful.
- GaN-based compound semiconductor layers such as an IGaN-based compound semiconductor layer, an active layer, and a second GaN-based compound semiconductor layer are formed.
- the method include metal organic chemical vapor deposition (MOCVD), MBE, and hydride vapor deposition in which halogen contributes to transport or reaction.
- Examples of the organic gallium source gas in the MOCVD method include trimethyl gallium (TMG) gas and trityl gallium (TEG) gas, and examples of the nitrogen source gas include ammonia gas and hydrazine gas.
- TMG trimethyl gallium
- TMG trityl gallium
- nitrogen source gas include ammonia gas and hydrazine gas.
- silicon (Si) may be added as an n-type impurity (n-type dopant), or p-type conductivity type.
- In forming the second GaN-based compound semiconductor layer having, for example, magnesium (Mg) may be added as a p-type impurity (p-type dopant).
- trimethylaluminum (TMA) gas may be used as the A1 source, and trimethylindium (TMI) as the In source.
- TMA trimethylaluminum
- TMI trimethylindium
- SiH gas monosilane gas
- SiH gas may be used as the Si source
- cyclopentadiene as the Mg source.
- -Rumagnesium gas may be methylcyclopentagel magnesium or biscyclopentagel magnesium (Cp Mg).
- n-type impurity n-type dopant
- p-type impurities include Zn, Cd, Be, Ca, Ba, and O in addition to Mg. be able to.
- the p-type electrode connected to the second GaN compound semiconductor layer having the p-type conductivity is palladium (Pd), platinum (Pt), nickel (Ni), A1 (aluminum), Ti (titanium).
- it has a single layer structure or a multilayer structure containing at least one metal selected from the group consisting of gold (Au) and silver (Ag), or ITO (Indium Tin Oxide Transparent) Conductive materials can be used, but silver that can reflect light with high efficiency
- the n-type electrode connected to the I-type compound semiconductor layer having the n-type conductivity is gold (Au), silver (Ag), palladium (Pd), A1 (aluminum), Ti ( Titanium), Tungsten (W), Cu (Copper), Zn (Zinc), Tin (Sn) and Indium (In) Forces Group force Containing at least one selected metal, having a single layer structure or multilayer structure
- TiZAu and Ti / AU Ti / PtZAu can be exemplified.
- the n-type electrode and the p-type electrode can be formed by a PVD method such as a vacuum deposition method or a sputtering method.
- a pad electrode may be provided on the n-type electrode or the p-type electrode in order to be electrically connected to an external electrode or circuit.
- the pad electrode is composed of at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), and Ni (nickel). It is desirable to have a configuration.
- the node electrode may have a multilayer configuration exemplified by a multilayer configuration of Ti / Pt / Au and a multilayer configuration of TiZAu.
- the assembly of the GaN-based semiconductor light-emitting device may have a face-up structure or a flip-chip structure. You may do it.
- the light emission amount (luminance) of the GaN-based semiconductor light-emitting element can be controlled by controlling the pulse width of the drive current, or by controlling the pulse density of the drive current. Alternatively, it can be performed at the peak current value of the driving current as well as the combination of these. This is because the influence of the change in the peak current value of the drive current on the emission wavelength of the GaN-based semiconductor light emitting element is small.
- the peak current value of the drive current when obtaining a certain emission wavelength ⁇ is I
- the pulse width of the drive current is ⁇
- T is one operating cycle of the operation of a GaN-based semiconductor light-emitting device in a conductor light-emitting device or a light-emitting device, image display device, planar light source device, or liquid crystal display assembly incorporating such a GaN-based semiconductor light-emitting device ,
- GaN-based semiconductor light-emitting device By controlling (adjusting) 0, the amount of light emitted from the GaN-based semiconductor light-emitting device (luminance) is controlled.
- the pulse width P of the drive current Pulse width control of the drive current
- the amount of light emitted from the N-based semiconductor light emitting device (brightness, brightness) can be controlled, and Z or
- GaN-based semiconductor light-emitting device has a pulse width P during one operating cycle T
- control of the light emission amount of the GaN-based semiconductor light-emitting element described above is, for example,
- Pulse drive current supply means for supplying a pulse drive current to a GaN-based semiconductor light emitting device
- Pulse drive current setting means for setting the pulse width and pulse density of the drive current
- the driving circuit for the GaN-based semiconductor light-emitting element can be applied not only to the GaN-based semiconductor light-emitting element of the present invention, which is characterized by the well layer density, but also to a conventional GaN-based semiconductor light-emitting element. You can also.
- GaN-based semiconductor light-emitting device of the present invention include a light-emitting diode (LED) and a semiconductor laser (LD).
- LED light-emitting diode
- LD semiconductor laser
- the laminated structure of the GaN-based compound semiconductor layer has a light emitting diode structure or a laser structure, there are no particular restrictions on the structure and configuration.
- the GaN-based semiconductor light-emitting device of the present invention automobiles, trains, and ships that can be used only by the above-described light-emitting device, image display device, planar light source device, and liquid crystal display device assembly including a color liquid crystal display device assembly
- Lamps and lights in transportation means such as airplanes (for example, headlights, taillights, high-mount stoplights, small lights, turn signal lamps, fog lights, room lights, instrument panel lights, light sources built into various buttons , Destination indicators, emergency lights, emergency exit lights, etc.), various types of lights and lights in buildings (outdoor lights, interior lights, lighting equipment, emergency lights, emergency exit lights, etc.), street lights, traffic lights, signs, machinery
- Various lighting fixtures in equipment, lighting fixtures in tunnels and underground passages, lighting units, special lighting in various inspection devices such as biological microscopes, and light Killing Examples include sterilization devices, deodorization and sterilization devices combined with photocatalysts, exposure devices in photography and semiconductor lithography, and devices
- d ⁇ d when the well layer density on the side of the first GaN compound semiconductor layer in the active layer is d and the well layer density on the side of the second GaN compound semiconductor layer is d, d ⁇ d is satisfied.
- the well layer in the active layer is arranged, and it is possible to suppress a large shift in the emission wavelength accompanying an increase in the operating current density while improving the luminous efficiency.
- the well layer contributing to light emission gradually shifts to the well layer on the second GaN-based compound semiconductor layer side. I was divided. The reason is the difference in the mobility of electrons and holes. In GaN-based compound semiconductors, the hole mobility is small, so that the holes do not reach the well layer near the second GaN-based compound semiconductor layer, and the light emitted from the recombination of holes and electrons is the second GaN-based compound semiconductor.
- the transmittance of carriers in the hetero-barrier consisting of a well layer and a barrier layer
- the factors causing the shift of the emission wavelength to the shorter wavelength side with the increase in operating current density in GaN-based semiconductor light-emitting devices are “local-level band filling” and “piezo electric field” accompanying the increase in carrier concentration in the well layer.
- the carrier concentration per well layer is reduced by uniformly allocating holes. It is considered that the shift of the emission wavelength to the short wavelength side can be reduced.
- the drive current (operating current) of the GaN-based semiconductor light-emitting element is increased tl to increase the light output of the GaN-based semiconductor light-emitting element, light emission caused by the increase in the drive current (operating current) It is possible to prevent problems such as wavelength shift.
- the operating current density is set to 30 AZcm 2 , 50AZcm 2 or lOOAZcm 2 or more, a much larger effect (increased brightness and shift of emission wavelength to shorter wavelength side) Reduction).
- a liquid crystal display device assembly including an image display device, a planar light source device, and a color liquid crystal display device assembly.
- the drive By driving the GaN-based semiconductor light-emitting element with a high peak current value of the current (operating current), the light output is increased, so that the shift of the emission wavelength is reduced, that is, the driving current (operating current) changes.
- the luminance can be increased while the emission wavelength does not fluctuate as much as the left.
- the brightness can be controlled based on the peak current value control of the drive current (operating current) in addition to the control of the pulse width and Z or pulse density of the drive current.
- brightness control of the entire device is performed by controlling the peak current value of the drive current (operating current)
- fine brightness control is performed by controlling the pulse width and Z or pulse density of the drive current.
- brightness control of the entire device is performed by controlling the pulse width and Z or pulse density of the drive current
- fine brightness control is performed for the peak current of the drive current (operating current). It may be performed by value control.
- the light-emitting device since the shift of the emission wavelength of the GaN-based semiconductor light-emitting element is small, stable chromaticity can be realized regardless of the current value. It is particularly useful for white light sources that combine blue and near-ultraviolet GaN-based semiconductor light-emitting elements and color conversion materials.
- FIG. 1 is a diagram conceptually showing a layer structure in a GaN-based semiconductor light-emitting element of Example 1.
- FIG. 2 is a schematic cross-sectional view of a GaN-based semiconductor light-emitting element of Example 1.
- Fig. 3 shows the operating current density and light of the GaN-based semiconductor light emitting devices of Example 1 and Comparative Example 1. It is a graph which shows the result of having measured the relationship with an output.
- FIG. 4 is a graph showing the relationship between the operating current density and the emission peak wavelength of the GaN-based semiconductor light emitting devices of Example 1 and Comparative Example 1.
- FIG. 5 is a conceptual diagram showing a state in which a drive current is supplied to the GaN-based semiconductor light-emitting element for evaluation of the GaN-based semiconductor light-emitting element.
- FIG. 6A is a schematic view of the GaN-based semiconductor light-emitting element of Example 1 as viewed from above.
- FIG. 6B is a schematic cross-sectional view (along with hatched lines) taken along the arrow BB in FIG. 6A.
- FIG. 7 is a schematic view of two GaN-based semiconductor light-emitting elements connected in series, looking at the top.
- FIG. 8 is a graph showing a band diagram and Fermi level near the active layer in Example 1.
- FIG. 9 is a graph showing a band diagram and Fermi level near the active layer in Comparative Example 1.
- FIG. 10 is a graph showing the results of calculating the hole concentration in Example 1.
- FIG. 11 is a graph showing the results of calculating the hole concentration in Comparative Example 1.
- FIG. 12 is a graph showing the results of calculating the hole concentration when the n-type impurity concentration of the active layer was changed in the structure of Example 1.
- FIG. 13 is a graph showing the calculation results of hole concentration in Example 1.
- FIG. 14 is a graph showing the hole concentration calculation results of Modification A of Example 1
- FIG. 15A is a graph showing the band diagram and Fermi level in the vicinity of the active layer in Modification B of Example 1.
- FIG. 15B is a graph showing the calculation results of the hole concentration in Modification B of Example 1.
- FIG. 16A is a graph showing the band diagram and Fermi level in the vicinity of the active layer in Modification C of Example 1.
- FIG. 16B is a graph showing the calculation results of the hole concentration in the modified example of Example 1-C. It is rough.
- FIG. 17A is a graph showing a band diagram and Fermi level in the vicinity of the active layer in Comparative Example 1-A.
- FIG. 17B is a graph showing the hole concentration calculation results in Comparative Example 1-A.
- FIG. 18 is a graph showing the relationship between the operating current density and the emission peak wavelength of the GaN-based semiconductor light-emitting elements of Example 3 and Comparative Example 3.
- FIG. 19A is a schematic view of the GaN-based semiconductor light-emitting element of Example 4 as viewed from above.
- FIG. 19B is a schematic cross-sectional view (along with hatched lines) taken along arrows BB in FIG. 19A.
- FIG. 20A is a graph showing the relationship between the operating current density and the peak wavelength shift amount in the GaN-based semiconductor light-emitting devices of Example 4A and Comparative Example 4A.
- FIG. 20B is a graph showing the relationship between the operating current density and the peak wavelength shift amount in the GaN-based semiconductor light-emitting devices of Example 4B and Comparative Example 4B.
- FIG. 21A is a circuit diagram of a passive matrix type direct-view image display apparatus (an image display apparatus according to the first embodiment) in Example 6.
- FIG. 21B is a schematic cross-sectional view of a light-emitting element panel in which GaN-based semiconductor light-emitting elements are arranged in a two-dimensional matrix.
- FIG. 22 is a circuit diagram of an active matrix type direct-view image display apparatus (an image display apparatus according to the mode 1A) in Example 6.
- FIG. 23 is a conceptual diagram of a process-type image display device (image display device according to the mode 1B) including a light-emitting element panel in which GaN-based semiconductor light-emitting elements are arranged in a two-dimensional matrix. is there.
- FIG. 24 is a conceptual diagram of a process-type color display image display device (image display device according to the mode 1C) including a red light-emitting element panel, a green light-emitting element panel, and a blue light-emitting element panel. It is.
- FIG. 25 is a diagram showing a GaN-based semiconductor light emitting device and a program including a light passage control device.
- 1 is a conceptual diagram of a chilled image display device (an image display device according to a 1D mode).
- FIG. 26 is a conceptual diagram of a color-type display-type image display device (image display device according to Embodiment 1D) including three sets of GaN-based semiconductor light-emitting elements and light passage control devices. .
- FIG. 27 is a conceptual diagram of a process-type image display device (image display device according to the 1E mode) including a light emitting element panel and a light passage control device.
- FIG. 28 is a conceptual diagram of a color display process type image display device (image display device according to the first F aspect) provided with three sets of a GaN-based semiconductor light emitting element and a light passage control device.
- FIG. 29 is a conceptual diagram of a color display process type image display device (image display device according to the 1G mode) including three sets of GaN-based semiconductor light-emitting elements and a light passage control device.
- FIG. 29 is a conceptual diagram of a color display process type image display device (image display device according to the 1G mode) including three sets of GaN-based semiconductor light-emitting elements and a light passage control device.
- FIG. 30 is a conceptual diagram of a color display process type image display device (image display device according to the 1H mode) including three sets of light emitting element panels and a light passage control device.
- FIG. 31 is a circuit diagram of an active matrix type direct-view color display image display device (an image display device according to a 2A mode) in the seventh embodiment.
- FIG. 32A is a diagram schematically showing the arrangement and arrangement of light emitting elements in the planar light source device of Example 8.
- FIG. 32B is a schematic partial cross-sectional view of the planar light source device and the color liquid crystal display device assembly.
- FIG. 33 is a schematic partial sectional view of a color liquid crystal display device.
- FIG. 34 is a conceptual diagram of a color liquid crystal display device assembly of Example 9.
- FIG. 35 is a schematic cross-sectional view of a GaN-based semiconductor light-emitting element having a flip-chip structure and LED power.
- FIG. 36 is a graph plotting the ratio of the blue emission peak component to the total in the GaN-based semiconductor light-emitting elements of Reference Sample 1 to Reference Sample 5.
- 2GaN-based compound semiconductor layer 18 ⁇ 'Mg-doped Ga N layer, 19 ⁇ ⁇ ⁇ -type electrode, 19 ⁇ ⁇ ⁇ -type electrode, 21 ⁇ Submount, 22 ⁇ "Plastic lens, 23 ⁇ ⁇ ' Gold wire, 23 ⁇ ⁇ 'External electrode, 24 ⁇ Reflector cup, 25 ⁇ ' Heat sink, 26 ⁇ 'Drive circuit, 27 ⁇ ' Control unit, 28 ⁇ 'Drive current source, 29 ...
- 'Pulse generation circuit 30 ⁇ Driver, 41, 43 ⁇ Column ⁇ Driver, 42, 44 ⁇ Low' driver, 45 ⁇ Dryno, 50 ⁇ Light emitting device panel, 51 ⁇ Support, 52 ⁇ ⁇ ⁇ Wiring direction ⁇ Wiring direction, 54 ⁇ ⁇ 'Transparent substrate, 55 ⁇ ' Micro lens, 56 ⁇ 'Projection lens, 57 ⁇ ' Dichroic 'prism, 58 ⁇ ⁇ LCD device, 59 ⁇ ⁇ ⁇ ⁇ Light guide member, 102 ⁇ 'Heat sink, 200, 200 ⁇ ⁇ ⁇ Color LCD display assembly, 210 ⁇ ' Color LCD display, 220 ⁇ ⁇ 'Front' panel, 221 '.' First substrate , 222 ...
- Color filter 223 ... Overcoat layer, 224 ... Transparent first electrode, 225 ... 'Orientation film, 226 ...' Polarizing film, 227 ... 'Liquid crystal material, 230 ...' Rear 'panel, 231 ...' second substrate, 232 ... 'switching element, 234 ...' transparent second electrode, 2 35 ... alignment film, 236 ... polarizing film, 240 ...
- Light source device 241 ⁇ Case, 242 ⁇ ⁇ Bottom of casing, 242 ⁇ ⁇ Side of casing, 243 ⁇ Outer frame, 244 ⁇ Inner frame, 245 ⁇ , 245 ⁇ ⁇ Spacer, 246 'Guide member 247 Bracket member 251 Diffuser plate 252 Diffuser sheet 253 Prism sheet 254 Polarization conversion sheet 255 Reflector sheet 250 ⁇ Light source device, 260 ⁇ Light source, 270 ⁇ Light guide plate, 271 ⁇ First surface of light guide plate, 272 ⁇ 'Uneven portion on first surface, 273 ⁇ ' No. Of light guide plate 2 side, 274 ... 'first side of light guide plate, 275 ...' second side of light guide plate, 276 ... 'third side of light guide plate, 281 ...' reflective member, 282 ... diffuser sheet 283, Prism sheet 301, 302 Solder layer 303 Aluminum layer 304 SiO layer 304 Passivation film
- a GaN-based semiconductor light-emitting device including an active layer having nine well layers and eight barrier layers A device (reference product 0) was produced.
- this GaN-based semiconductor light-emitting device as shown in the conceptual diagram of the layer structure, a nofer layer 11 (thickness 30 nm); an undoped GaN layer 12 (thickness: L) m); n-type conductivity type IGaN compound semiconductor layer 13 (thickness 3 / zm); undoped GaN layer 14 (thickness 5 nm); well layer and barrier layer separating the well layer from the well layer Active layer 15 having a multiple quantum well structure (well and barrier layers are not shown); undoped GaN layer 16 (thickness lOnm); second GaN compound semiconductor layer 17 having p-type conductivity (thickness) 20 nm); Mg-doped GaN layer (contact layer) 18 (thickness 100 nm) has a stacked structure and structure.
- the buffer layer 11, the undoped GaN layer 12, the undoped GaN layer 14, the undoped GaN layer 16, and the Mg-doped GaN layer 18 may be omitted.
- the undoped GaN layer 14 is provided to improve the crystallinity of the active layer 15 on which crystals are grown.
- the undoped Ga N layer 16 is a dopant (for example, Mg) in the second GaN compound semiconductor layer 17. Is provided to prevent diffusion into the active layer 15.
- the well layer in the active layer 15 is composed of an InGaN (InGaN) layer force having a thickness of 3 nm and an In composition ratio of 0.23, and the barrier layer has a thickness of
- InGaN InGaN
- the GaN layer strength of 15nm is also included.
- the well layer having such a composition may be referred to as a well layer of composition A for convenience.
- the emission peak wavelength at an operating current density of 60 AZcm 2 was 515 nm, and the light emission efficiency was 180 mWZA. Sales
- the total luminous flux measurement can be more than twice as efficient.
- a GaN-based semiconductor light-emitting device having the same layer structure and the same force, but adjusting the In composition ratio of only one specific layer among the nine well layers, that is, the thickness of 3 nm, the In composition ratio A well layer consisting of 0.15 InGaN (I n Ga N) layers (for convenience, it may be called a well layer of composition—B) 1
- a GaN-based semiconductor light-emitting device comprising a well layer of composition A was prepared.
- a GaN-based semiconductor light-emitting device in which the first well layer is composed of a well layer of composition B from the IGaN-based compound semiconductor layer side is referred to as reference product 1, and the third well layer is derived from the well layer of composition B.
- the other well layers are composed of the well layers having the composition A as described above.
- the purpose of this experiment is to determine the light emission ratio of each well layer force when a green light emitting GaN-based semiconductor light emitting device (light emitting diode) having nine well layers is made to emit light! / It is in visualizing.
- the emission peak wavelength at an operating current density of 60 AZcm 2 was 515 nm, and the luminous efficiency was 180 mWZA.
- the blue emission region is also caused by the presence of the well layer of composition B. A small emission peak was seen.
- the ratio of the blue emission peak component to the total is plotted in FIG. 36, the first layer, the third layer,... On the horizontal axis indicate the positions of the well layer of composition B from the IGaN-based compound semiconductor layer side.
- the band gap energy differs by 350 meV and the typical emission decay lifetime is different (for example, SF In Chichibu, et al., Materials Science & Engineering B59 (1999) p.29 8 Fig.6)
- the emission decay lifetime force in the LED with In composition ratio 0.15 (blue light emission) is nanosecond
- the method of experimentally showing the light emission distribution as shown in Fig. 36 has been conventionally used. There is no technique.
- light emission occurs in the active layer having the multiple quantum well structure at the second GaN-based compound semiconductor layer side in the active layer having a thickness direction of about 2 Z3 at any operating current density. Is biased. In addition, 80% of the emitted light is active on the second GaN compound semiconductor layer side. The thickness direction of the conductive layer is occupied by light emission from the region up to 1Z2. As described above, the reason why light emission is significantly biased is the difference in the mobility between electrons and holes as described in JP-T-2003-520453.
- holes Since the mobility of holes is small in GaN-based compound semiconductors, holes only reach the well layer near the second GaN-based compound semiconductor layer, and light emission that is a recombination of holes and electrons occurs in the second GaN-based compound semiconductor. It is thought that it is biased toward the compound semiconductor layer side. Also, in terms of the transmittance for carriers in the hetero barrier composed of a well layer and a barrier layer, holes having a large effective mass can reach the well layer on the IGaN-based compound semiconductor layer side across multiple barrier layers. The factor that it is difficult can also be considered.
- the multiple quantum having a well layer with an asymmetric distribution in which the distribution of the well layer is biased toward the second GaN-based compound semiconductor layer A well structure can be proposed. Furthermore, it can be seen that the peak of the emission distribution is located in the region of the active layer on the second GaN compound semiconductor layer side in the thickness direction 1Z3 to 1Z4. Identify well layers as light-emitting layers, such as semiconductor lasers and light-emitting diodes using the optical resonator effect (for example, see YC Shen, et al, Applied Physics Letters, vol.
- the distribution of the well layer was biased to a region of about 1Z3 in the thickness direction of the active layer on the second GaN compound semiconductor layer side It is desirable to use a multiple quantum well structure.
- Example 1 relates to the GaN-based semiconductor light-emitting device of the present invention, more specifically, a light-emitting diode (LED).
- the layer configuration is conceptually shown in FIG. 1 and the schematic cross-sectional view is shown in FIG. 2, the layer configuration of the GaN-based semiconductor light-emitting device 1 of Example 1 is the same as that of the active layer 15 except for the configuration and structure. It has the same structure and structure as the layer structure of product 0.
- Such a GaN-based semiconductor light-emitting element 1 is fixed to the submount 21, and the GaN-based semiconductor light-emitting element 1 is externally connected via a wiring (not shown) provided on the submount 21 and a gold wire 23A.
- the electrode 23B is electrically connected, and the external electrode 23B is electrically connected to the drive circuit 26.
- the submount 21 is attached to the reflector cup 24, and the reflector cup 24 is attached to the heat sink 25.
- GaN-based semiconductor light emitting devices 1 A plastic lens 22 is disposed above the GaN-based semiconductor light-emitting element 1 between the plastic lens 22 and the GaN-based semiconductor light-emitting element 1.
- Epoxy resin for example, 1.5
- gel material for example, Nye's trade name OCK-451 (refractive index: 1.51), trade name OCK-433 (refractive index: 1.46)]
- silicone rubber for example, silicone rubber
- silicone oil The compound is filled with a light-transmitting medium layer (not shown) exemplified by a Tatsumi oil compound material [for example, TSK5353 (refractive index: 1.45) of Toshiba Silicone Co., Ltd.].
- the active density is satisfied so that d ⁇ d is satisfied.
- the well layer in the active layer 15 is arranged.
- the details of the multiple quantum well structure that constitutes the active layer 15 are shown in Table 1 below.
- Table 1 or Tables 2 and 3 to be described later the numbers in parentheses on the right side of the values of the thickness of the well layer and the thickness of the barrier layer are the IGaN-based compound semiconductor layer side interface in the active layer 15 (More specifically, in Example 1, the accumulated thickness from the undoped GaN layer 14 and the active layer 15) is shown.
- Example 1 Comparative Example 1 Modification of Example 1 A Total active layer thickness nm) 1 50 1 47 1 62
- Example 1 10th well layer thickness (nm) 3 (1 50) 3 (1 47) 1 1 1--1
- the total thickness of the active layer 15 is t
- the thickness of the active layer 15 is IGaN system
- Compound semiconductor layer side interface (More specifically, in Example 1, the undoped GaN layer 14 and The well layer density in the active layer first region AR from the interface with the active layer 15) to the thickness (2t Z3)
- the well layer density d and the well layer density d are obtained from the equations (1 1) and (1 2).
- an n-type semiconductor light-emitting device is used for evaluation and for simplifying the manufacturing process, based on the lithographic process and the etching process.
- First conductivity type IGaN-based compound semiconductor layer 13 is partially exposed, p-type electrode 19B made of AgZNi is formed on Mg-doped GaN layer 18, and TiZAl is formed on first IGaN-based compound semiconductor layer 13
- the n-type electrode 19A was formed, and the n-type electrode 19A and the p-type electrode 19B were probed with a probe, the drive current was supplied, and the light emitted from the back surface of the substrate 10 was detected.
- FIG. 6A shows a schematic view of the GaN-based semiconductor light-emitting element 1 as viewed from above
- FIG. 6B shows a schematic cross-sectional view along the arrow BB in FIG. 6A (the hatched lines are omitted).
- the operating current density of the GaN-based semiconductor light-emitting element is a value obtained by dividing the operating current value by the active layer area (junction region area). For example, the operating current density in the case where the active layer area of the GaN-based semiconductor light-emitting device 1 shown in FIGS.
- a current of the driving current of 20mA is, 33AZcm 2 When Calculated. Further, for example, even when the GaN-based semiconductor light emitting devices 1 as shown in FIG. 7 are connected in series, the operating current density is calculated to be 33 AZcm 2 .
- the results of measuring the relationship between the operating current density of the GaN-based semiconductor light-emitting device and the light output are shown in FIG. 3.
- the light output of the GaN-based semiconductor light-emitting device 1 of Example 1 is the conventional GaN-based semiconductor. Compared to Comparative Example 1, which is a light-emitting element, the number is increased.
- the difference in light output between the GaN-based semiconductor light-emitting device of Example 1 and the GaN-based semiconductor light-emitting device of Comparative Example 1 becomes significant when the operating current density is 50 A / cm 2 or more, and when the operating current density is lOOAZcm 2 or more. The difference is more than 10%.
- the GaN-based semiconductor light-emitting element 1 of Example 1 has an operating current density of 50 AZcm 2 or more, preferably an operating current density of lOOAZcm 2 or more, and the light output is greatly increased as compared with the conventional GaN-based semiconductor light-emitting element. It is desirable to use an operating current density of 50 AZcm 2 or more, preferably an operating current density of lOOAZcm 2 or more.
- FIG. 4 shows the relationship between the operating current density and the emission peak wavelength of the GaN-based semiconductor light emitting device.
- the operating current density is increased from 0.1 lAZcm 2 to 300 AZcm 2
- ⁇ ⁇ — 19 nm in Comparative Example 1
- ⁇ ⁇ — 8 nm in Example 1.
- a small emission wavelength shift is realized.
- no wavelength shift is observed when the operating current density is 30 AZcm 2 or more.
- the operating current density is set to 30 AZcm 2 or more, only a slight change in emission wavelength occurs, which is preferable in terms of management of emission wavelength and emission color.
- the GaN-based semiconductor light-emitting device 1 of Example 1 is the conventional GaN-based of Comparative Example 1.
- the advantage that the wavelength shift is remarkably smaller than that of the semiconductor light emitting device is apparent.
- Example 1 band diagrams of Example 1 and Comparative Example 1 were calculated.
- the composition, doping concentration, and the like were values described in [Step-100] to [Step-140] described later, and the n-type impurity concentration in the active layer was 1 ⁇ 10 17 / cm 3 .
- the external bias was 3 volts.
- FIG. 8 and FIG. 9 show the band diagrams and Fermi levels in the vicinity of the active layer in Example 1 and Comparative Example 1 obtained by calculation.
- Example 1 and Comparative Example 1 there are 10 well layers in the active layer, but the slope of the band due to the piezo electric field in the well layer (downward to the right) and before and after the well layer It is characterized by a large band bend (up to the right).
- the difference between Example 1 and Comparative Example 1 appears in the envelope, and in Comparative Example 1 in which the well layers are evenly distributed, there is a gentle downward force, but in Example 1, the thickness of the barrier layer (Between the active layer and the IGaN-based compound semiconductor interface force is also about 1Z3).
- Between the active layer and the IGaN-based compound semiconductor interface force is also about 1Z3
- Example 1 the results of calculating the hole concentration in Example 1 and Comparative Example 1 are shown in FIG. 10 and FIG.
- Comparative Example 1 holes are allocated only from the interface of the second GaN compound semiconductor to the third well layer, but in Example 1, it is! / It can be seen that the hole concentration is distributed to the 9th layer of the second GaN compound semiconductor interface force, which is higher than that of Comparative Example 1.
- the hole concentration distribution in Comparative Example 1 is a force that is considered to be because the holes reach only the vicinity of the second GaN-based compound semiconductor interface in terms of mobility and effective mass. Holes can be distributed to more well layers and well layers farther away from the second GaN-based compound semiconductor interface, which is thought to have improved the output of light-emitting elements and reduced the shift in emission wavelength.
- FIG. 12 shows the result of calculating the hole concentration when the n-type impurity concentration of the active layer is changed in the structure of Example 1 using the same calculation.
- the n-type impurity concentration is 5 ⁇ 10 16 / cm 3
- the concentration is two orders of magnitude higher than when the n-type impurity concentration is 1 ⁇ 10 17 / cm 3.
- Holes are allocated to the four well layers.
- the n-type impurity concentration is 2 ⁇ 10 17 Zcm 3 or more, holes reach only the two or three well layers in the vicinity of the second GaN compound semiconductor interface, and the concentration is low.
- the n-type impurity concentration is preferably less than 2 ⁇ 10 17 / cm 3 or undoped.
- the n-type impurity concentration should be less than 2 X 10 17 / cm 3 when the entire active layer is averaged. Is desirable.
- Example 1 As a modification of Example 1, a GaN-based semiconductor light-emitting device having the structure shown in the right column of Table 1 was produced.
- the thickness of the first barrier layer was doubled to 50 nm.
- the thickness of the entire active layer was adjusted by reducing the well layer and barrier layer by one. In general, the thickness of the barrier layer decreases gradually.
- Example 1 The calculation results of the hole concentration of Example 1 and Modification A of Example 1 are shown in FIGS.
- Example 1 holes with a higher concentration were distributed in more well layers than in Comparative Example 1, but there was only one well layer with a particularly high hole concentration.
- the modified example A of Example 1 there are two well layers having a higher concentration, which is considered to be effective by improving the light emission efficiency and reducing the shift of the light emission wavelength.
- the structure of the modified example of example 1 (modified example B of example 1 and modified example of example 1-C) in which the number of well layers is four and the structure of comparative example 1-A are as follows: Table 2 shows.
- Table 2 shows.
- the band diagram and Fermi level in the vicinity of the active layer in the modified example B of example 1, the modified example C of example 1, and the comparative example 1A obtained by calculation are shown in FIG. 15A, FIG. 17A, and the hole concentration calculation results are shown in FIGS. 15B, 16B, and 17B.
- the hole concentration in the rightmost well layer closest to the second GaN compound semiconductor interface
- the blue power of the GaN-based semiconductor light-emitting element has the effect of improving the light emission efficiency in the visible light range such as green and reducing the shift of the light emission wavelength. It is considered effective for improving the luminous efficiency even in the region of (wavelength of about 400 nm), and effective in reducing the emission wavelength shift and improving the luminous efficiency even in the ultraviolet region (up to 365 nm wavelength) by the AlGaN system with a larger piezoelectric field. It is done.
- the light emission amount (luminance) of such a GaN-based semiconductor light-emitting element may be controlled by the pulse width control of the drive current in addition to the method of performing the drive current peak current value I, or or
- the light emission amount (luminance) of the GaN-based semiconductor light-emitting element may be controlled by the same method.
- the total thickness of the active layer 15 is t, and the IGaN-based compound semiconductor layer side boundary in the active layer 15 is
- the density of the well layer in the first region AR of the active layer up to (Z2) is d, and the second GaN compound semiconductor layer side interface (
- Thickness (t / 3) from interface (more specifically, interface between undoped GaN layer 14 and active layer 15)
- Active layer second region at 0 When the well layer density in the AR is d, the active layer is active so that d ⁇ d is satisfied.
- the density d is calculated as follows using the formulas (1-1) and (1-2) forces.
- the drive circuit 26 includes a control unit 27, a drive current source 28 that is a supply source of drive current, a pulse generation circuit 29 that generates a predetermined pulse signal, Driver 30 is provided.
- the drive current source 28, the pulse generation circuit 29, and the driver 30 force correspond to pulse drive current supply means for supplying a pulse drive current to the GaN-based semiconductor light emitting element.
- the control unit 27 corresponds to pulse driving current setting means for setting the pulse width and pulse density of the pulse driving current and means for setting the peak current value.
- the peak current value I of the drive current is controlled under the control of the control unit 27.
- the pulse width P of the GaN-based semiconductor light-emitting element 1 is controlled under the control of the control unit 27, and one operation cycle T of the operation of the GaN-based semiconductor light-emitting element 1 is achieved.
- a pulse signal is output from the pulse generation circuit 29.
- pulse modulation is performed on the drive current sent from the drive current source 28 based on the pulse signal sent from the pulse generation circuit 29. Then, this pulse driving current is supplied to the GaN-based semiconductor light emitting device 1. Thereby, the light emission amount of the Ga N-based semiconductor light-emitting element 1 is controlled.
- sapphire with the C-plane as the main surface is used as the substrate 10, and after cleaning the substrate for 10 minutes at a substrate temperature of 1050 ° C in a carrier gas consisting of hydrogen, the substrate temperature is lowered to 500 ° C. .
- a carrier gas consisting of hydrogen a carrier gas consisting of hydrogen
- the substrate temperature is lowered to 500 ° C. .
- ammonia gas which is a nitrogen raw material
- TMG trimethylgallium
- a 30 nm thick buffer layer 11 with low-temperature GaN power is crystallized on the substrate 10, and then the TMG gas is supplied. Interrupt.
- the doping concentration is about 5 ⁇ 10 18 Zcm 3 .
- TMG triethylgallium
- TMI trimethylindium
- TMG triethylgallium
- TMG triethylgallium
- TMI trimethylindium
- the thickness is increased.
- 5 nm undoped GaN layer 14 is crystal-grown, followed by an InGaN well layer with an undoped or n-type impurity concentration of less than 2 X 10 17 Zcm 3 and an undoped or n-type impurity concentration of 2 X 10 17 / cm
- An active layer 15 having a multiple quantum well structure composed of a barrier layer made of GaN that is less than 3 is formed.
- the In composition ratio in the well layer is, for example, 0.23, which corresponds to an emission wavelength of 515 nm.
- the In composition ratio in the well layer may be determined based on a desired emission wavelength.
- the details of the multiple quantum well structure are as shown in Table 1, for example.
- the substrate temperature is raised to 800 ° C. while growing the undoped lOnm GaN layer 16, trimethylaluminum (TMA) gas as the A1 source, and biscyclohexane as the Mg source.
- TMA trimethylaluminum
- Cp Mg pentacyclomagnesium
- AlAl (AlGaN: Mg) force with a composition ratio of 0.20 is also formed, and p-type conductivity thickness
- a second GaN compound semiconductor layer 17 having a thickness of 20 nm is grown.
- the doping concentration is about 5 ⁇ 10 19 Zcm 3 .
- an Mg-doped GaN layer (GaN: Mg) 18 having a thickness of lOOnm is grown on the second GaN-based compound semiconductor layer 17.
- the doping concentration is about 5 ⁇ 10 19 Zcm 3 .
- the emission wavelength is assumed to be nm.
- thermal degradation of the active layer 15 can be suppressed.
- the substrate is annealed in a nitrogen gas atmosphere at 800 ° C. for 10 minutes to activate the p-type impurity (p-type dopant). Then normal LE
- the chipping is performed by dicing through the photolithographic process, the etching process, the formation process of the p-type electrode and the n-type electrode by metal deposition, and further, the resin mold, By performing the package, various light emitting diodes such as a shell type and a surface mount type can be manufactured.
- the second embodiment is a modification of the first embodiment.
- the GaN-based semiconductor light-emitting device of Example 2 between the IGaN-based compound semiconductor layer 13 and the active layer 15 (more specifically, in Example 2, the IGaN-based compound semiconductor layer 13 A base layer containing In atoms is formed between the active layer 15 and the second GaN-based compound semiconductor layer 17 (more specifically, in Example 2).
- a superlattice structure layer containing a p-type dopant is formed between the undoped GaN layer 16 and the second GaN-based compound semiconductor layer 17).
- the underlayer is formed of a 150 nm thick Si-doped InGaN layer with an In composition ratio of 0.03.
- the doping concentration is 5 ⁇ 10 18 / cm 3 .
- the superlattice structure layer has a superlattice structure in which five cycles of a 2.4 nm thick AlGaN layer (Mg doping) and a 1.6 nm thick GaN layer (Mg doping) are stacked.
- the Al composition ratio in the AlGaN layer is 0.15.
- the concentration of the P-type dopant contained in the superlattice structure layer is 5 ⁇ 10 19 / cm 3 .
- the GaN-based semiconductor light-emitting device of Example 2 has the same configuration and structure as the GaN-based semiconductor light-emitting device of Example 1, and thus detailed description thereof is omitted.
- the configuration and structure of the GaN-based semiconductor light-emitting element of Example 2 can also be applied to the GaN-based semiconductor light-emitting elements of Examples 3 to 4 described later.
- the third embodiment is a modification of the first embodiment.
- the details of the multiple quantum well structure constituting the active layer 15 in the GaN-based semiconductor light-emitting device of Example 3 are shown in Table 3 below.
- Example 3 and Comparative Example 3 the In composition ratio of the well layer was adjusted so that the emission wavelength was approximately 445 nm.
- the well layer density d and the well layer density d are obtained from the formulas (1 1) and (1 2), and are as follows.
- Example 3 the GaN-based semiconductor light-emitting devices of Example 3 and Comparative Example 3 were evaluated based on the same method as in Example 1.
- FIG. 18 shows the relationship between the operating current density and the emission peak wavelength of the GaN-based semiconductor light-emitting device.
- the operating current density is increased from 0.1 lAZcm 2 to 300 A / cm 2
- ⁇ ⁇ —9 nm in Comparative Example 3
- ⁇ ⁇ 9 nm in Example 3.
- An extremely small emission wavelength shift of lnm has been realized.
- the GaN-based semiconductor light-emitting device 1 of Example 3 that emits blue light has a significantly smaller wavelength shift than the conventional GaN-based semiconductor light-emitting device of Comparative Example 3.
- Example 4 The fourth embodiment is also a modification of the first embodiment.
- a schematic view of the GaN-based semiconductor light-emitting element 1 of Example 4 as viewed from above is shown in FIG. 19A, and a schematic cross-sectional view along arrow BB in FIG. 19A ( However, the oblique lines are omitted).
- the GaN-based semiconductor light-emitting device 1 of Example 4 is different from the GaN-based semiconductor light-emitting device 1 of Example 1 shown in FIGS. 6A and 6B in the planar shape of the active layer. That is, in Example 4, the planar shape of the active layer 15 of the GaN-based semiconductor light-emitting element 1 is a circle having a diameter (corresponding to the minor axis) and an L force of 14 m.
- the GaN-based semiconductor light-emitting element 1 of Example 4 has the same configuration and structure as the GaN-based semiconductor light-emitting element 1 of Example 1.
- the GaN-based semiconductor light-emitting device 1 of Example 4 is referred to as the GaN-based semiconductor light-emitting device of Example 4A.
- the GaN-based semiconductor light-emitting element 1 is referred to as the GaN-based semiconductor light-emitting element of Example 4B for convenience.
- a GaN-based semiconductor light-emitting device having the same structure as the GaN-based semiconductor light-emitting device 1 of Example 4 but having the same structure as that of Comparative Example 1 was prepared as Comparative Example 4.
- the GaN-based semiconductor light-emitting device of Comparative Example 4 is referred to as a GaN-based semiconductor light-emitting device of Comparative Example 4A.
- the planar shape of the active layer of the GaN-based semiconductor light-emitting device has a length L of one side (corresponding to the short side) of 300. Shape with a part of m square cut out (area: approx. 6.8 X 10 " 4 cm 2
- the GaN-based semiconductor light emitting device is manufactured.
- This GaN-based semiconductor light-emitting element is referred to as the GaN-based semiconductor light-emitting element of Comparative Example 4B for convenience.
- Example 4A and Comparative Example 4A when driving the GaN-based semiconductor light - emitting element of Example 4B and Comparative Example 4B with operating current density 30AZcm 2, the drive current value, respectively, about 5
- FIG. 20A shows the relationship between the operating current density and the peak wavelength shift amount in the GaN-based semiconductor light-emitting devices of Example 4A and Comparative Example 4A.
- FIG. 20B shows the relationship between the operating current density and the peak wavelength shift amount in the light-emitting element.
- Example 4A has a smaller emission wavelength shift than Example 4B.
- the GaN-based semiconductor light emitting device there are variations in the composition, thickness, doping, light emission, and threshold voltage of the quantum well layer. The maximum and minimum widths of this variation are more The larger the GaN-based semiconductor light emitting device, the larger.
- the GaN-based semiconductor light emitting device is large in size and has a path through which a current flows in the lateral direction, it is difficult to flow the current uniformly due to the sheet resistance of the layer, and the uneven operating current density is in-plane. Arise. For these reasons, it is considered that the emission wavelength shift accompanying the change in operating current density is more emphasized in large GaN-based semiconductor light-emitting devices. Conversely, the sizing power of GaN-based semiconductor light-emitting elements, in which case it can be said that the shift of the emission wavelength can be further reduced.
- Example 5 relates to a light-emitting device of the present invention.
- the light-emitting device of Example 5 has a wavelength different from the wavelength of the GaN-based semiconductor light-emitting element and the light emitted from the GaN-based semiconductor light-emitting element, which is incident on the GaN-based semiconductor light-emitting element force. It consists of a color conversion material that emits light.
- the structure of the light emitting device of Example 5 itself has the same structure as the conventional light emitting device, and the color conversion material is applied on, for example, the light emitting portion of a GaN-based semiconductor light emitting element. It is.
- the basic configuration and structure of the GaN-based semiconductor light-emitting device are the same as described in Example 1 to Example 4,
- the well layer density on the active layer 15 on the IGaN compound semiconductor layer side is d, the second GaN system
- the active layer 15 When the density of the well layer on the compound semiconductor layer side is d, the active layer 15 so that d ⁇ d is satisfied.
- the well layer in is arranged.
- Example 5 the light emitted from the GaN-based semiconductor light-emitting element is blue, the light emitted from the color conversion material is yellow, and the color conversion material is YAG (yttrium aluminum garnet).
- the light emitted from the GaN-based semiconductor light emitting element (blue) and the light emitted from the color conversion material (yellow) are mixed to emit white light.
- the light emitted from the GaN-based semiconductor light-emitting element is blue
- the light emitted from the color conversion material is composed of green and red
- the light emitted from the GaN-based semiconductor light-emitting element The emitted light (blue) and the emitted light (green and red) of the color conversion material force are mixed to emit a white color.
- the color conversion material that emits green light is specifically SrGa S
- a GaN-based semiconductor light emitting device such as Eu is also composed of green-emitting phosphor particles that are excited by the emitted blue light, and the color conversion material that emits red light is specifically a GaN-based semiconductor such as CaS: Eu.
- the light emitting element force is also composed of red light emitting phosphor particles that are excited by the emitted blue light.
- the driving of the GaN-based semiconductor light-emitting element in the light-emitting device of Example 5 includes, for example, the peak current value of a desired driving current that can be performed by the driving circuit 26 described in Example 1, and the driving current.
- the driving current By performing the pulse width control and the Z or drive current pulse density control, the luminance (brightness) of the light emitting device can be controlled.
- the same GaN-based semiconductor light-emitting element (light-emitting diode) as described in Example 1 to Example 4 By using, it is possible to suppress a large shift in the emission wavelength, and thus to stabilize the emission wavelength of the GaN-based semiconductor light-emitting element.
- Example 6 relates to the image display device according to the first aspect of the present invention.
- the image display device of Example 6 is an image display device including a GaN-based semiconductor light-emitting element for displaying an image.
- the basic configuration and structure of the GaN-based semiconductor light-emitting element are as follows: Same as described in Example 1 to Example 4,
- the well layer density on the active layer 15 on the IGaN compound semiconductor layer side is d, the second GaN system
- the active layer 15 When the density of the well layer on the compound semiconductor layer side is d, the active layer 15 so that d ⁇ d is satisfied.
- the well layer in is arranged.
- the driving current pulse width control and Z in addition to controlling the operating current density (or driving current) of the GaN-based semiconductor light-emitting device for displaying an image, the driving current pulse width control and Z Alternatively, the luminance (brightness) of the display image can be controlled by controlling the pulse density of the driving current.
- the brightness control parameters are increased compared to the conventional technology, and it is possible to perform brightness control over a wide range, and it is possible to widen the brightness dynamic range. Specifically, for example, brightness control of the entire image display device is performed by controlling the peak current value of the drive current (operating current), and fine brightness control is performed by controlling the pulse width and Z or pulse density of the drive current.
- brightness control of the entire image display device is performed by controlling the pulse width and Z or pulse density of the drive current, and fine brightness control of the drive current (operating current). If you use peak current control.
- the use of the same GaN-based semiconductor light-emitting element (light-emitting diode) as described in Examples 1 to 4 can achieve suppression of a large shift in the emission wavelength.
- the light emission wavelength of the semiconductor light emitting element can be stabilized.
- a GaN-based semiconductor light-emitting element 1 includes a light-emitting element panel 50 arranged in a two-dimensional matrix
- Each of the GaN-based semiconductor light-emitting elements 1 emits light.
- the light-emitting state of the Ga N-based semiconductor light-emitting element 1 can be directly viewed to display an image.
- Type image display device
- FIG. 21A shows a circuit diagram including the light-emitting element panel 50 constituting such a passive matrix type direct-view image display device, and light emission in which GaN-based semiconductor light-emitting elements 1 are arranged in a two-dimensional matrix.
- a schematic cross-sectional view of the element panel is shown in FIG. 21B.
- One electrode (p-type electrode or n-type electrode) of each GaN-based semiconductor light-emitting element 1 is connected to a column driver 41, and each GaN-based semiconductor light-emitting element
- the other electrode of 1 is connected to the row 'driver 42.
- each GaN-based semiconductor light-emitting element 1 is controlled by, for example, a row 'drying board 42, and a driving current for driving each GaN-based semiconductor light-emitting element 1 is supplied from a column' driver 41.
- the One of the functions of the column 'driver 41 is the same as that of the drive circuit 26 in the first embodiment.
- the selection, driving, and operation of each GaN-based semiconductor light-emitting element 1 can be a well-known method, and thus detailed description thereof is omitted.
- the light-emitting element panel 50 is formed on, for example, a support 51 having a printed wiring board force, a GaN-based semiconductor light-emitting element 1 attached to the support 51, and the support 51, and a GaN-based semiconductor light-emitting element. 1 is electrically connected to one electrode (P-type electrode or n-type electrode), and there is a column driver 41.
- the transparent light-emitting element 1 includes a transparent base 54 that covers the light-emitting element 1 and a microlens 55 that is provided on the transparent base 54.
- the light emitting element panel 50 is not limited to such a configuration.
- a GaN-based semiconductor light-emitting element 1 is provided with a light-emitting element panel arranged in a two-dimensional matrix
- GaN-based semiconductor light-emitting device 1 Direct emission type of active matrix type that displays images by directly viewing the light-emitting state of Ga N-based semiconductor light-emitting device 1 by controlling the light emission of each GaN-based semiconductor light-emitting device 1 Z Image display device.
- FIG. 22 shows a circuit diagram including the light emitting element panel constituting such an active matrix type direct-view image display device.
- One electrode (P-type electrode) of each GaN-based semiconductor light-emitting element 1 is shown in FIG.
- the n-type electrode is connected to the driver 45, and the dry cylinder 45 is connected to the column “driver 43” and the row “driver” 44.
- the other electrode (n-type electrode or p-type electrode) of each GaN-based semiconductor light-emitting element 1 is connected to a ground line.
- each GaN-based semiconductor light-emitting element 1 is controlled by, for example, selection of the driver 45 by the row driver 44, and the luminance for driving each GaN-based semiconductor light-emitting element 1 from the column driver 43.
- a signal is supplied to the driver 45.
- a predetermined voltage is separately supplied to each driver 45 from a power source (not shown), and the driver 45 supplies a driving current (based on PDM control or PWM control) corresponding to the luminance signal to the GaN-based semiconductor light emitting element 1. .
- One of the functions of the column driver 43 is the same as the function of the drive circuit 26 in the first embodiment. Selection and driving of each GaN-based semiconductor light-emitting element 1 can be a well-known method, and thus detailed description thereof is omitted.
- a GaN-based semiconductor light-emitting element 1 includes a light-emitting element panel 50 arranged in a two-dimensional matrix
- Each GaN-based semiconductor light-emitting device 1 emits light Z is controlled in non-light-emitting state and projected onto a screen to display an image.
- FIG. 23 shows a conceptual diagram of the light-emitting element panel 50 and the like in which the GaN-based semiconductor light-emitting elements 1 are arranged in a two-dimensional matrix. Light emitted from the light-emitting element panel 50 is also transmitted through the projection lens 56. Projected on the screen. Since the configuration and structure of the light-emitting element panel 50 can be the same as the configuration and structure of the light-emitting element panel 50 described with reference to FIG. 21B, detailed description thereof is omitted.
- Green light emitting element panel 50G in which GaN-based semiconductor light emitting elements 1G emitting green light are arranged in a two-dimensional matrix, and
- Red light emitting device panel 50R, green light emitting device panel 50G and blue light emitting device panel 50B means for collecting the emitted light into one optical path (for example, dichroic prism 52),
- Red-light-emitting semiconductor light-emitting element 1R green-light-emitting GaN-based semiconductor light-emitting element 1G, and blue-light-emitting GaN-based semiconductor light-emitting element 1B.
- the circuit diagram including the light emitting element panel constituting such a passive matrix type image display device is the same as that shown in FIG. 21A, and includes the light emitting element panel constituting the active matrix type image display device. Since the circuit diagram is the same as that shown in FIG. 22, detailed description thereof is omitted.
- GaN-based semiconductor light-emitting elements 1R, 1G, and 1B are two-dimensional Fig. 24 shows a conceptual diagram of light emitting element panels 50R, 50G, 50B, etc. arranged in a matrix. Light emitting element panels 50R, 50G, 50B force The emitted light is incident on dichroic prism 57. The optical paths of these lights are combined into a single optical path.
- the light path is viewed directly.
- the screen passes through a projection lens 56, Projected on.
- the configuration and structure of the light emitting element panels 50R, 50G, and 50B can be the same as the configuration and structure of the light emitting element panel 50 described with reference to FIG. 21B, and thus detailed description thereof is omitted.
- the semiconductor light emitting elements 1R, 1G, and 1B constituting the light emitting element panels 50R, 50G, and 50B are replaced with the GaN-based semiconductor described in the first to fourth embodiments.
- the semiconductor light-emitting element 1R constituting the light-emitting element panel 50R is made of an AlInGaP-based compound semiconductor light-emitting diode to form the light-emitting element panels 50G and 50B.
- the semiconductor light emitting devices 1G and 1B may be the GaN-based semiconductor light emitting device 1 described in the first to fourth embodiments.
- Light passage control device which is a kind of light 'valve for controlling the passage of Z light not passing through the light emitted from the GaN-based semiconductor light emitting device 101 (for example, a high-temperature polysilicon type thin film transistor is provided.
- Liquid crystal display 58 The same applies to the following),
- a direct-view or projection-type image display device that displays an image by controlling the passage Z non-passage of the emitted light emitted from the GaN-based semiconductor light emitting element 101 by the liquid crystal display device 58 that is a light passage control device.
- the number of GaN-based semiconductor light-emitting elements can be one or more as long as it is determined based on specifications required for the image display device.
- the number of the GaN-based semiconductor light-emitting elements 101 is one, and the GaN-based semiconductor light-emitting elements 101 are attached to the heat sink 102.
- Light emitted from the GaN-based semiconductor light emitting device 101 is guided by a light guiding member 59 made of a light guide member made of a light-transmitting material such as silicone resin, epoxy resin, polycarbonate resin, or a reflector such as a mirror. Then, it enters the liquid crystal display device 58.
- the light emitted from the liquid crystal display device 58 is directly viewed in the direct-view image display device, or is projected onto the screen via the projection lens 56 in the case of the projection-type image display device.
- the GaN-based semiconductor light-emitting element 101 can be the GaN-based semiconductor light-emitting element 1 described in the first to fourth embodiments.
- semiconductor light-emitting elements that emit red light for example, AlGalnP-based semiconductor light-emitting elements and GaN-based semiconductor light-emitting elements
- semiconductor light-emitting elements that emit red light 101R pass through the emitted light
- Light transmission control device for example, liquid crystal display device 58R
- the light passing control device for example, a liquid crystal display device 58G
- a GaN-based semiconductor light emitting device 101B that emits blue light
- a light passage control device e.g., a liquid crystal display device 58B
- a display device By using a display device, a direct-view or projection-type image display device with a power display can be obtained.
- the example shown in the conceptual diagram in FIG. 26 is a color display projection type image display apparatus.
- the semiconductor light emitting elements 101R, 101G, and 101B be the GaN-based semiconductor light emitting element 1 described in Examples 1 to 4.
- the semiconductor light-emitting element 101R is composed of an AlInGaP-based compound semiconductor light-emitting diode, and the semiconductor light-emitting elements 101G and 101B are the same as the GaN-based semiconductor light-emitting element 1 described in Examples 1 to 4.
- a direct-view or projection-type image display device that displays an image by controlling the passage Z non-passage of the emitted light emitted from the GaN-based semiconductor light-emitting element 1 by the light passage control device (liquid crystal display device 58).
- the conceptual diagram of the light emitting element panel 50 and the like is shown in FIG. 27.
- the configuration and structure of the light emitting element panel 50 may be the same as the configuration and structure of the light emitting element panel 50 described with reference to FIG. 21B. Since it can, detailed explanation is omitted.
- the passage, non-passage, and brightness of the light emitted from the light-emitting element panel 50 are controlled by the operation of the liquid crystal display device 58. Therefore, the GaN-based semiconductor light-emitting element 1 constituting the light-emitting element panel 50 is always used. It may be lit, or it may be lit at an appropriate cycle.
- the light emitted from the light emitting element panel 50 enters the liquid crystal display device 58, and the light emitted from the liquid crystal display device 58 is directly viewed in the direct-view image display device or is projected.
- the image is projected onto the screen via the projection lens 56.
- red light emitting device panel 50R In which 1R is arranged in a two-dimensional matrix, and red light emitting device panel 50R Red light passage control device (liquid crystal display device 58R) to control the passage of the emitted light and Z non-passage,
- red light emitting device panel 50R Red light passage control device (liquid crystal display device 58R) to control the passage of the emitted light and Z non-passage
- GaN-based semiconductor light-emitting elements emitting green light 1G are arranged in a two-dimensional matrix Green light-emitting element panel 50G, green light-emitting element panel 50G
- Green light passage control device liquid crystal display 58G for controlling Z non-passage
- OB force Color-directed direct-view or projection-type image display device that displays an image by controlling the passage of the emitted light.
- GaN-based semiconductor light-emitting elements 1R, 1G, and 1B are arranged in a two-dimensional matrix.
- Light-emitting elements Nonore 50R, 50G, and 50B The emitted light is controlled by the light passage control devices 58R, 58G, and 58B to pass through Z and is incident on the dichroic prism 57. The light paths of these lights are combined into a single light path for direct viewing. In the case of the type image display device, it is viewed directly, or in the case of the projection type image display device, it is projected onto the screen via the projection lens 56. Since the configuration and structure of the light emitting element panels 50R, 50G, and 50B can be the same as the configuration and structure of the light emitting element panel 50 described with reference to FIG. 21B, detailed description thereof is omitted.
- the semiconductor light emitting elements 1R, 1G, and 1B constituting the light emitting element panels 50R, 50G, and 50B are replaced with the GaN-based semiconductor described in the first to fourth embodiments.
- the semiconductor light-emitting element 1R constituting the light-emitting element panel 50R is made of an AlInGaP-based compound semiconductor light-emitting diode to form the light-emitting element panels 50G and 50B.
- the semiconductor light emitting devices 1G and 1B may be the GaN-based semiconductor light emitting device 1 described in the first to fourth embodiments.
- a field sequential color display image display device displays an image by controlling the passage Z non-passage of the emitted light emitted from these light emitting elements by the light passage control device 58. ).
- FIG. 29 shows a conceptual diagram of the semiconductor light emitting elements 101R, 101G, 101B, etc.
- the light emitted by the semiconductor light emitting elements 101R, 101G, 101B is incident on the dichroic prism 57 and the optical path of these lights Are collected in a single optical path, and these lights emitted from the dichroic prism 57 are controlled to pass Z non-passage by the light passage control device 58, and are directly viewed in the direct view type image display device, or In the case of a process type image display device, the image is projected onto a screen via a projection lens 56.
- the semiconductor light emitting elements 101R, 101G, and 101B be the GaN-based semiconductor light emitting element 1 described in Examples 1 to 4, but in some cases, for example,
- the semiconductor light emitting device 101R may be composed of an AlInGaP based compound semiconductor light emitting diode, and the semiconductor light emitting devices 101G and 101B may be the GaN semiconductor light emitting device 1 described in the first to fourth embodiments.
- Green light emitting element panel 50G in which GaN-based semiconductor light emitting elements 1G emitting green light are arranged in a two-dimensional matrix, and
- ( ⁇ ) Means for collecting light emitted from each of the red light-emitting element panel 50R, the green light-emitting element panel 50G, and the blue light-emitting element panel 50B into one optical path (e.g., dichromat prism 57), and ,
- Light-emission control device 58 emits light from these light-emitting element panels 50R, 50G, and 50B.
- Field-sequential color display that displays images by controlling the passage of the emitted light and the non-passage of Z.
- Equipment directly view type or production type).
- GaN-based semiconductor light-emitting elements 1R, 1G, and 1B are arranged in a two-dimensional matrix.
- Light-emitting elements Nonore 50R, 50G, 50B, etc. The light that is also emitted is incident on the dichroic 'prism 57, and the optical paths of these lights are combined into a single optical path.
- the non-passage is controlled, and the direct-view image display device is directly viewed.
- the projection-type image display device is projected onto the screen via the projection lens 56. Since the configuration and structure of the light emitting element panels 50R, 50G, and 50B can be the same as the configuration and structure of the light emitting element panel 50 described with reference to FIG. 21B, detailed description thereof is omitted.
- the semiconductor light emitting elements 1R, 1G, and 1B constituting the light emitting element panels 50R, 50G, and 50B are replaced with the GaN-based semiconductor described in the first to fourth embodiments.
- the semiconductor light-emitting element 1R constituting the light-emitting element panel 50R is made of an AlInGaP-based compound semiconductor light-emitting diode to form the light-emitting element panels 50G and 50B.
- the semiconductor light emitting devices 1G and 1B may be the GaN-based semiconductor light emitting device 1 described in the first to fourth embodiments.
- Example 7 relates to an image display device according to the second aspect of the present invention.
- the image display device of Example 7 includes a first light emitting element that emits blue light, a second light emitting element that emits green light, and a third light emitting element that emits red light.
- a GaN-based semiconductor that is an image display device in which element units UN are arranged in a two-dimensional matrix, and constitutes at least one light emitting element among the first light emitting element, the second light emitting element, and the third light emitting element
- the basic configuration and structure of the light-emitting element (light-emitting diode) are the same as described in Example 1 to Example 4, (A) an IGaN-based compound semiconductor layer 13 having an n-type conductivity type,
- the well layer density on the active layer 15 on the IGaN compound semiconductor layer side is d, the second GaN system
- the active layer 15 When the density of the well layer on the compound semiconductor layer side is d, the active layer 15 so that d ⁇ d is satisfied.
- the well layer in is arranged.
- any one of the first light emitting element, the second light emitting element, and the third light emitting element is used as the GaN-based semiconductor light emitting device described in Examples 1 to 4.
- a red light emitting element may be composed of an AlInGaP compound semiconductor light emitting diode.
- the pulse width control of the driving current is performed.
- the pulse density of Z or drive current the brightness (brightness) of the displayed image can be controlled.
- the brightness control parameters are increased compared to the prior art, and a wider range of brightness control can be performed, and the brightness dynamic range can be increased.
- brightness control of the entire image display apparatus is performed by controlling the peak current value of the drive current (operating current)
- fine brightness control is performed by controlling the pulse width and Z or pulse density of the drive current.
- brightness control of the entire image display device is performed by controlling the pulse width and Z or pulse density of the drive current, and fine brightness control of the drive current (operating current).
- the peak current value control may be performed.
- the same GaN-based semiconductor light-emitting element (light-emitting diode) as described in Examples 1 to 4 can be used, it is possible to suppress a large shift in the emission wavelength.
- the emission wavelength of the semiconductor light emitting device can be stabilized.
- image display device of the seventh embodiment for example, an image display device having the configuration and structure described below can be cited.
- the number of light emitting element units UN may be determined based on the specifications required for the image display device.
- Image display device according to the first and second light-emitting devices and image display device according to the second and second light-emitting devices Control the light emission and non-light emission state of each of the first light-emitting element, the second light-emitting element, and the third light-emitting element.
- an image display device of a direct-view type color display of a noxious matrix type or an active matrix type that displays an image by directly visualizing the light emission state of each light emitting element, and the first light emitting element,
- the light emission of each of the second light emitting element and the third light emitting element ⁇ Passive matrix type or active matrix type projection type power control that displays the image by controlling the non-light emitting state and projecting it on the screen Display image display device.
- FIG. 31 shows a circuit diagram including a light-emitting element panel constituting such an active matrix type direct-view color display image display device.
- Each GaN-based semiconductor light-emitting element 1 (FIG. 31) is shown. ), A semiconductor light emitting device emitting red light is indicated by “R”, a GaN semiconductor light emitting device emitting green light is indicated by “G”, and a GaN semiconductor light emitting device emitting blue light is indicated by “B”).
- One electrode p-type electrode or n-type electrode
- the driver 45 is connected to a column 'driver 43 and a row' driver 44.
- each GaN-based semiconductor light-emitting element 1 is connected to a ground line.
- the light emission Z non-light emission state of each GaN-based semiconductor light-emitting element 1 is controlled by, for example, selection of the dry-grind 45 by the low-dry 44, and each GaN-based semiconductor light-emitting element 1 is driven from the column dry-light 43.
- a luminance signal is supplied to the driver 45.
- a predetermined voltage is separately supplied to each driver 45 from a power source (not shown), and the driver 45 supplies a drive current (based on PDM control or PWM control) corresponding to the luminance signal to the GaN-based semiconductor light-emitting element 1.
- One of the functions of the column 'driver 43 is the same as the function of the drive circuit 26 in the first embodiment.
- the semiconductor light emitting element R that emits red light, the GaN-based semiconductor light emitting element G that emits green light, and the GaN-based semiconductor light emitting element B that emits blue light are selected by the driver 45, and these semiconductor light emitting elements that emit red light R, GaN-based semiconductor light-emitting element G that emits green light, and GaN-based semiconductor light-emitting element B that emits blue light
- Each of the non-light-emitting states may be controlled in a time-sharing manner or may be simultaneously emitted Good.
- each GaN-based semiconductor light-emitting element 1 can be a well-known method, and thus detailed description thereof is omitted.
- direct view type image display devices direct view
- the projection image is projected onto the screen via a projection lens.
- a light passage control device for example, a liquid crystal display device for controlling passage of light Z emitted from the light emitting element units arranged in a two-dimensional matrix, for example, a first light emitting element in the light emitting element unit; Light emission of each of the second light-emitting element and the third light-emitting element is controlled in a time-sharing manner, and light emitted from the first light-emitting element, the second light-emitting element, and the third light-emitting element is controlled by the light passage control device.
- Pass-through A field-sequential color display direct-view or projection-type image display device that displays images by controlling Z non-passage.
- Example 8 relates to a planar light source device and a liquid crystal display device assembly (specifically, a color liquid crystal display device assembly) of the present invention.
- the planar light source device of Example 8 is a planar light source device that irradiates a transmissive or transflective color liquid crystal display device from the back.
- the color liquid crystal display device assembly of Example 8 is a transmissive or semi-transmissive color liquid crystal display device, and a power liquid crystal device including a planar light source device that irradiates the color liquid crystal display device from the back side.
- a display device assembly is a planar light source device that irradiates the color liquid crystal display device from the back side.
- the active layer 15 When the density of the well layer on the compound semiconductor layer side is d, the active layer 15 so that d ⁇ d is satisfied.
- the well layer in is arranged.
- the driving current pulse width control and Z or driving By controlling the current pulse density, it is possible to control the brightness (brightness) of the GaN-based semiconductor light-emitting device as the light source.
- the brightness control parameters are increased compared to the conventional technology, so that a wider range of brightness control can be performed, and a wide dynamic range of brightness can be obtained.
- brightness control of the entire planar light source device is performed by controlling the peak current value of the drive current (operating current)
- fine brightness control is performed by controlling the pulse width and Z or pulse density of the drive current.
- brightness control of the entire planar light source device is performed by controlling the pulse width and Z or pulse density of the drive current, and fine brightness control is performed by the drive current (operation This can be done by controlling the peak current value of (current).
- fine brightness control is performed by the drive current (operation This can be done by controlling the peak current value of (current).
- the same GaN-based semiconductor light-emitting element (light-emitting diode) as described in Examples 1 to 4 can be used, a large shift in the emission wavelength can be achieved.
- the light emission wavelength of the semiconductor light emitting device can be stabilized.
- FIG. 32A The arrangement and arrangement of the light emitting elements in the planar light source device of Example 8 are schematically shown in Fig. 32A, and a schematic partial sectional view of the planar light source device and the color liquid crystal display device assembly is shown in Fig. 32B.
- FIG. 33 shows a schematic partial cross-sectional view of the color liquid crystal display device.
- the color liquid crystal display device assembly 200 of Example 8 includes:
- a transmissive color liquid crystal display device 210 comprising a liquid crystal material 227 disposed between the front 'panel 220 and the rear' panel 230, and
- a planar light source device having a semiconductor light emitting element 1R, 1G, 1B as a light source (direct backlight) 240,
- planar light source device (direct type knock light) 240 is a rear panel 230.
- the color liquid crystal display device 210 is also irradiated with the rear side panel side force.
- the direct type planar light source device 240 includes a casing 241 that includes an outer frame 243 and an inner frame 244.
- the end of the transmissive color liquid crystal display device 210 is held by the outer frame 243 and the inner frame 244 so as to be sandwiched between the spacers 245A and 245B.
- a guide member 246 is disposed between the outer frame 243 and the inner frame 244 so that the color liquid crystal display device 210 sandwiched between the outer frame 243 and the inner frame 244 does not shift.
- a diffusion plate 251 is attached to the inner frame 244 via a spacer 245C and a bracket member 247 inside and above the casing 241.
- a group of optical function sheets such as a diffusion sheet 252, a prism sheet 253, and a polarization conversion sheet 254 are laminated.
- a reflection sheet 255 is provided inside and below the housing 241.
- the reflection sheet 255 is disposed so that the reflection surface thereof faces the diffusion plate 251 and is attached to the bottom surface 242A of the housing 241 via an attachment member (not shown).
- the reflection sheet 255 can be composed of, for example, a silver-enhanced reflection film having a structure in which a silver reflection film, a low refractive index film, and a high refractive index film are sequentially laminated on a sheet base material.
- the reflective sheet 255 is emitted from a plurality of AlGalnP semiconductor light emitting devices 1R that emit red light, a plurality of GaN semiconductor light emitting devices 1G that emit green light, and a plurality of GaN semiconductor light emitting devices 1B that emit blue light.
- the light and the light reflected by the side surface 242B of the housing 241 are reflected.
- red, green, and blue emitted from the plurality of semiconductor light emitting elements 1R, 1G, and 1B are mixed, and white light with high color purity can be obtained as illumination light.
- the illumination light passes through the optical function sheet group such as the diffusion plate 251, the diffusion sheet 252, the prism sheet 253, and the polarization conversion sheet 254, and irradiates the color liquid crystal display device 210 with back force.
- the arrangement state of the light emitting elements is, for example, a light emitting element array including a red light emitting AlGalnP semiconductor light emitting element 1R, a green light emitting GaN semiconductor light emitting element 1G, and a blue light emitting GaN semiconductor light emitting element 1B.
- a plurality of light emitting element arrayes are formed in a row in the horizontal direction, and a plurality of light emitting element array arrays are arranged in the vertical direction.
- the number of each light emitting element constituting the element array is, for example, (two red light emitting AlGalnP semiconductor light emitting elements, two green light emitting GaN semiconductor light emitting elements, one blue light emitting GaN semiconductor light emitting element).
- AlGalnP-based semiconductor light-emitting elements emitting red light
- GaN-based semiconductor light-emitting elements emitting green light
- GaN-based semiconductor light-emitting elements emitting blue light
- AlGalnP-based semiconductor light-emitting elements emitting red light ing.
- the front panel 220 constituting the color liquid crystal display device 210 is provided, for example, on a first substrate 221 made of a glass substrate cover and the outer surface of the first substrate 221. And a polarizing film 226.
- the inner surface of the first substrate 221 is provided with a color filter 22 2 covered with an overcoat layer 223 made of acrylic resin or epoxy resin, and a transparent first electrode (common electrode) is formed on the overcoat layer 223.
- 224 is also formed (for example, also having ITO force), and an alignment film 225 is formed on the transparent first electrode 224.
- the rear panel 230 more specifically includes, for example, a second substrate 231 having a glass substrate force, and a switching element (specifically, a thin film transistor, a TFT) formed on the inner surface of the second substrate 231.
- a switching element specifically, a thin film transistor, a TFT
- a transparent second electrode also referred to as a pixel electrode, for example, made of ITO
- An alignment film 235 is formed on the entire surface including the transparent second electrode 234.
- the front 'panel 220 and the rear' panel 230 are joined to each other at their outer peripheral portions via a sealing material (not shown).
- the switching element 232 is not limited to a TFT, and may be configured as, for example, a MIM element cover.
- Reference numeral 237 in the drawing is an insulating layer provided between the switching element 232 and the switching element 232.
- transmissive color liquid crystal display devices can be constituted by well-known members and material forces, and thus detailed description thereof is omitted.
- Each of the red light emitting semiconductor light emitting device 1R, the green light emitting GaN semiconductor light emitting device 1G, and the blue light emitting GaN semiconductor light emitting device 1B has the structure shown in FIG. Connected to circuit 26. Then, it is driven by the same method as described in the first embodiment.
- the planar light source device is divided into a plurality of regions, and each region is dynamically controlled independently. Thus, it is possible to further expand the dynamic range related to the brightness of the color liquid crystal display device. That is, the planar light source device is divided into a plurality of regions for each image display frame, and the brightness of the planar light source device is changed in accordance with the image signal for each region (for example, the image corresponding to each region is displayed). By making the luminance of the corresponding area of the planar light source device proportional to the maximum luminance of the area), in the bright area of the image, the corresponding area of the planar light source device is brightened and matched to the dark area of the image.
- the contrast ratio of the color liquid crystal display device can be greatly improved by darkening the corresponding area of the planar light source device. Furthermore, the average power consumption can be reduced. In this technology, it is important to reduce color unevenness between areas of the planar light source device.
- GaN-based semiconductor light-emitting elements are likely to cause variations in emission color during manufacturing.
- the GaN-based semiconductor light-emitting elements used in Example 8 are the GaN-based semiconductor light-emitting elements described in Examples 1 to 4, and are It is possible to achieve a planar light source device with little emission color variation for each.
- the driving force is also controlled by controlling the driving current pulse width and Z or driving current pulse density.
- the brightness (brightness) of the GaN-based semiconductor light-emitting device can be controlled, so it is more reliable and easy to divide into multiple regions and control each region dynamically independently. It can be carried out. Specifically, for example, the brightness control of each area of the planar light source device is performed by the peak current value control of the drive current (operating current), and the fine brightness control is performed by the pulse width and Z of the drive current.
- the luminance control of the entire planar light source device is performed by controlling the pulse width and Z or pulse density of the drive current, and fine luminance control is performed. If the peak current value of the drive current (operating current) is controlled.
- Example 9 is a modification of Example 8.
- the planar light source device was a direct type.
- the planar light source device is an edge light type.
- a conceptual diagram of the color liquid crystal display device assembly of Example 9 is shown in FIG.
- a schematic partial cross-sectional view of the color liquid crystal display device in Example 9 is the same as the schematic partial cross-sectional view shown in FIG.
- the color liquid crystal display assembly 200A of Example 9 is (a) Front 'panel 220 with transparent first electrode 224,
- a transmissive color liquid crystal display device 210 comprising a liquid crystal material 227 disposed between the front 'panel 220 and the rear' panel 230, and
- a planar light source device 250 which comprises a light guide plate 270 and a light source 260 and irradiates the color liquid crystal display device 210 from the rear panel side.
- the light guide plate 270 is disposed so as to face (face to face) the rear panel 230.
- the light source 260 includes, for example, a red light emitting AlGalnP semiconductor light emitting element, a green light emitting GaN semiconductor light emitting element, and a blue light emitting GaN semiconductor light emitting element. These semiconductor light emitting elements are not specifically shown.
- the GaN-based semiconductor light-emitting device emitting green light and the GaN-based semiconductor light-emitting device emitting blue light can be the same as the GaN-based semiconductor light-emitting devices described in Examples 1 to 4.
- the configuration and structure of the front 'panel 220 and the rear' panel 230 constituting the color liquid crystal display device 210 are the same as those of the front 'panel 220 and the rear' panel 230 of the eighth embodiment described with reference to FIG. Since it can be set as a structure and a structure, detailed description is abbreviate
- a light guide plate 270 made of polycarbonate resin has a first surface (bottom surface) 271, a second surface (top surface) 273 opposite to the first surface 271, a first side surface 274, a second side surface 275, A third side 276 facing the first side 274 and a fourth side facing the second side 274 are included.
- a more specific shape of the light guide plate 270 is a wedge-shaped truncated quadrangular pyramid as a whole, and two opposing side surfaces of the truncated quadrangular pyramid correspond to the first surface 271 and the second surface 273, and The bottom of the quadrangular pyramid corresponds to the first side 274.
- an uneven portion 272 is provided on the surface portion of the first surface 271.
- the cross-sectional shape of the continuous convex and concave portions when the light guide plate 270 is cut in a virtual plane perpendicular to the first surface 271 in the light incident direction to the light guide plate 270 is a triangle.
- the uneven portion 272 provided on the surface portion of the first surface 271 has a prism shape.
- the second surface 273 of the light guide plate 270 may be smooth (that is, may be a mirror surface) or may be provided with a blast texture having a diffusion effect (that is, a fine uneven surface).
- a reflective member 281 is disposed to face the first surface 271 of the light guide plate 270. Further, the color liquid is opposed to the second surface 273 of the light guide plate 270.
- a crystal display device 210 is arranged.
- a diffusion sheet 282 and a prism sheet 283 are disposed between the color liquid crystal display device 210 and the second surface 273 of the light guide plate 270.
- the light emitted from the light source 260 is incident on the light guide plate 270 from the first side surface 274 of the light guide plate 270 (for example, the surface corresponding to the bottom surface of the truncated quadrangular pyramid), and collides with the uneven portion 272 of the first surface 271.
- the color liquid crystal display device 210 is irradiated.
- GaN-based semiconductor light-emitting elements described in the embodiments, and light-emitting devices, image display devices, planar light source devices, and color liquid crystal display device assemblies incorporating such GaN-based semiconductor light-emitting elements are examples.
- the members, materials, and the like constituting these are also examples, and can be changed as appropriate.
- the order of stacking in the GaN-based semiconductor light emitting device may be reversed.
- a direct-view image display device may be an image display device that projects an image on a human retina.
- the n-type electrode and the p-type electrode were formed on the same side (upper side) of the GaN-based semiconductor light-emitting device.
- the substrate 10 was peeled off, and the n-type electrode and the p-type electrode were formed. May be formed on different sides of the GaN-based semiconductor light emitting device, that is, the n-type electrode on the lower side and the p-type electrode on the upper side.
- a form using a reflective electrode such as silver or aluminum, which is not a transparent electrode, or a form having different long sides (major axis) and short sides (minor axis) can be adopted.
- FIG. 35 shows a schematic cross-sectional view of a GaN-based semiconductor light-emitting element 1 having an LED power having a flip-chip structure. However, in FIG. 35, the hatching of each component is omitted.
- the layer structure of the GaN-based semiconductor light-emitting element 1 can be the same as the layer structure of the GaN-based semiconductor light-emitting element 1 described in Examples 1 to 4.
- the side surfaces of each layer are covered with a passivation film 305, an n-type electrode 19A is formed on the exposed portion of the IGaN-based compound semiconductor layer 13, and the Mg-doped GaN layer 18 is also used as a light reflecting layer.
- a functioning p-type electrode 19B is formed.
- the lower part of the GaN-based semiconductor light-emitting element 1 has an SiO layer 30
- the p-type electrode 19B and the aluminum layer 303 are fixed to the submount 21 by solder layers 301 and 302. Live here
- a semiconductor laser can be constituted by a GaN-based semiconductor light emitting element.
- a layer configuration of such a semiconductor laser a configuration in which the following layers are sequentially formed on a GaN substrate can be exemplified.
- the emission wavelength is about 450 nm.
- An active layer having a multiple quantum well structure (from the bottom, consisting of an InGaN layer with a thickness of 3 nm
- Well layer Z Barrier layer consisting of InGaN layer with a thickness of 15 nm Z InGaN layer with a thickness of 3 nm
- Well layer composed of N layer Z In barrier layer composed of InGa N layer with a thickness of 5 nm Indium with a thickness of 3 nm
- Mg-doped GaN layer is one set, and five sets are stacked, doping concentration is 5 X 10 19 Zcm 3 )
- Temperature characteristics (temperature vs. emission wavelength) of AlGalnP semiconductor light emitting elements and GaN semiconductor light emitting elements are obtained in advance, and AlGalnP semiconductor light emitting elements and GaN in planar light source devices or color liquid crystal display device assemblies are obtained. By monitoring the temperature of the semiconductor light emitting device, stable operation of the AlGalnP semiconductor light emitting device and GaN semiconductor light emitting device can be realized immediately after the power is turned on.
- the drive circuit 26 described above is not limited to the driving of the GaN-based semiconductor light-emitting device of the present invention.
- the GaN-based semiconductor light-emitting device has a conventional configuration and structure (for example, the GaN-based semiconductor light-emitting device described in Comparative Example 1).
- the present invention can also be applied to driving of a semiconductor light emitting device.
- the drive circuit disclosed in Japanese Patent Laid-Open No. 2003-22052 can also be used.
- This drive circuit includes an emission wavelength correction unit that corrects variations in emission wavelength among a plurality of GaN-based semiconductor light-emitting elements by controlling a current supplied to the GaN-based semiconductor light-emitting element, and luminance between the GaN-based semiconductor light-emitting elements. It has a light emission luminance correction means for correcting the variation.
- the emission wavelength correcting means has a current mirror circuit provided for each driven GaN-based semiconductor light-emitting element, and the current mirror circuit is configured to adjust the current flowing through the GaN-based semiconductor light-emitting element. it can.
- the current flowing through the reference side of the current mirror circuit is controlled by controlling the current flowing through a plurality of active elements connected in parallel.
- the light emission luminance correction means can be configured to have a constant current circuit that supplies current to the driven GaN-based semiconductor light emitting element, and to control on / off of the switching element of the constant current circuit.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US11/718,862 US8168966B2 (en) | 2005-09-13 | 2006-09-08 | GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly |
KR1020077010323A KR101299996B1 (ko) | 2005-09-13 | 2006-09-08 | GaN계 반도체 발광 소자, 발광 장치, 화상 표시 장치,면상 광원 장치 및 액정 표시 장치 조립체 |
EP06783241.0A EP1926151B1 (en) | 2005-09-13 | 2006-09-08 | GaN-BASE SEMICONDUCTOR LIGHT EMITTING ELEMENT, LUMINESCENT DEVICE, IMAGE DISPLAY DEVICE, PLANAR LIGHT SOURCE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE ASSEMBLY |
Applications Claiming Priority (2)
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JP2005264938 | 2005-09-13 | ||
JP2005-264938 | 2005-09-13 |
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WO2007032281A1 true WO2007032281A1 (ja) | 2007-03-22 |
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PCT/JP2006/317881 WO2007032281A1 (ja) | 2005-09-13 | 2006-09-08 | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
Country Status (7)
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US (1) | US8168966B2 (ja) |
EP (1) | EP1926151B1 (ja) |
JP (1) | JP2007110090A (ja) |
KR (1) | KR101299996B1 (ja) |
CN (1) | CN100527457C (ja) |
TW (1) | TW200802961A (ja) |
WO (1) | WO2007032281A1 (ja) |
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- 2006-09-08 WO PCT/JP2006/317881 patent/WO2007032281A1/ja active Application Filing
- 2006-09-08 US US11/718,862 patent/US8168966B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
KR20080048980A (ko) | 2008-06-03 |
TWI364117B (ja) | 2012-05-11 |
KR101299996B1 (ko) | 2013-08-26 |
TW200802961A (en) | 2008-01-01 |
CN101091262A (zh) | 2007-12-19 |
EP1926151A1 (en) | 2008-05-28 |
EP1926151B1 (en) | 2020-06-10 |
CN100527457C (zh) | 2009-08-12 |
EP1926151A4 (en) | 2014-03-19 |
US20070284564A1 (en) | 2007-12-13 |
US8168966B2 (en) | 2012-05-01 |
JP2007110090A (ja) | 2007-04-26 |
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