WO2007015367A1 - 接続構造体の製造方法 - Google Patents
接続構造体の製造方法 Download PDFInfo
- Publication number
- WO2007015367A1 WO2007015367A1 PCT/JP2006/314179 JP2006314179W WO2007015367A1 WO 2007015367 A1 WO2007015367 A1 WO 2007015367A1 JP 2006314179 W JP2006314179 W JP 2006314179W WO 2007015367 A1 WO2007015367 A1 WO 2007015367A1
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- WIPO (PCT)
- Prior art keywords
- electrode
- adhesive
- circuit member
- anisotropic conductive
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present invention relates to a method for manufacturing a connection structure in which circuit boards facing each other are connected with an adhesive, in particular, for driving using an anisotropic conductive adhesive on a transparent electrode on a glass substrate of a liquid crystal panel.
- the present invention relates to a method for manufacturing a liquid crystal device mounting I c.
- liquid crystal device is generally used as a display device.
- Liquid crystal devices equipped with ICs are used in a large number of products such as fax machines, mobile phones, audio equipment, household products, liquid crystal printers, liquid crystal projectors, liquid crystal monitors, and liquid crystal television receivers.
- Patent Document 1 discloses a method for manufacturing a liquid crystal device in which a driving IC is directly mounted on a transparent electrode on a glass substrate of a liquid crystal panel.
- an anisotropic conductive adhesive is disposed on the extending portion of the glass substrate of the liquid crystal panel, and the driving IC is positioned face down on the anisotropic conductive adhesive, and then the back of the driving IC.
- a driving IC is mounted by applying pressure and heating using a heater block from the surface.
- the anisotropic conductive adhesive on the lower side of the driving IC is cured.
- An uncured portion is generated in the protruding portion of the anisotropic conductive adhesive around the outer periphery.
- the uncured portion of this anisotropic conductive adhesive absorbs moisture, causing electrolytic corrosion, for example, when the current is passed, the transparent electrode is electrolyzed (indium oxide force becomes S indium alone), breaks, and is energized. This is one of the causes of the phenomenon of being lost.
- Patent Document 2 discloses a method of curing by blowing hot air onto an uncured anisotropic conductive adhesive that protrudes around the periphery.
- Patent Document 1 Japanese Patent Laid-Open No. 62-244143
- Patent Document 2 Japanese Patent Laid-Open No. 2001-93936
- An object of the present invention is to provide a method for manufacturing a connection structure in which an uncured portion of an adhesive is cured to prevent an electrolytic corrosion phenomenon.
- connection structure manufacturing method is provided.
- Adhesive is placed on the first circuit member on which the first electrode is formed on the first substrate, and the second circuit member on which the second electrode is formed on the second substrate. In the state where the first electrode and the second electrode are opposed to each other with the adhesive sandwiched between the first electrode and the second electrode,
- the second circuit member is pressurized and heated in the connecting direction of the first electrode and the second electrode to cure the adhesive interposed between the first electrode and the second electrode.
- a method for producing a connection structure wherein an uncured portion of the adhesive protruding from the outer periphery of the second circuit member is cured by irradiating energy waves.
- connection structure according to claim 1 wherein the adhesive is an anisotropic conductive adhesive, the first circuit member is a glass substrate of a liquid crystal panel, and the second circuit member is a driving IC. Manufacturing method.
- connection structure in which an uncured portion of an adhesive is cured to prevent an electrolytic corrosion phenomenon.
- FIG. 1 is a process diagram showing an embodiment according to a method for manufacturing a connection structure of the present invention.
- connection structure Accordingly, a method for manufacturing a connection structure according to the present invention will be described with reference to the drawings.
- FIG. 1 is a process diagram showing an embodiment according to a method for manufacturing a connection structure of the present invention.
- the glass substrate (first circuit member) of the liquid crystal panel is connected to the driving IC (second circuit member) by an anisotropic conductive film (adhesive).
- FIG. 1 (a) shows a process of attaching the anisotropic conductive film 20 on the substrate.
- the anisotropic conductive film 20 is temporarily fixed at a predetermined position on the conductive pattern (first electrode) 13 formed on the extended portion 12 of the lower glass substrate 11 of the liquid crystal panel 10.
- An anisotropic conductive film (not shown) is usually composed of a base film and an anisotropic conductive film laminated on the base film.
- the anisotropic conductive film is usually composed of an insulating resin 21 such as a thermoplastic resin and conductive particles 22 as shown in FIGS. 1 (d) and 1 (e).
- the base film functions as a carrier tape for the anisotropic conductive film, and there is no particular limitation on the forming material, thickness, and the like thereof as long as transfer of the anisotropic conductive film to the substrate is not hindered.
- the forming material, thickness, and the like thereof as long as transfer of the anisotropic conductive film to the substrate is not hindered.
- polytetrafluoroethylene, a polyethylene terephthalate (PET) film that has been subjected to a release treatment, or the like can be used.
- An anisotropic conductive film is usually a conductive particle dispersed in an insulating resin, but the insulating resin itself is the same as a known anisotropic conductive film. It can be.
- the insulating resin various thermosetting adhesives and thermoplastic adhesives can be used. From the viewpoint of reliability after mounting the IC chip, it is preferable to use a thermosetting adhesive such as an epoxy resin, a urethane resin, an acrylate resin, or a BT resin resin.
- a single type of resin component or a mixture of multiple types may be used.
- the conductive particles for example, various kinds of particles having a good electric conductor force such as metal powders made of Ni, Ag, Cu, or alloys thereof, and the like, and the surface of spherical resin particles are subjected to metal plating Can be used. It is also possible to use particles in which an insulating film is formed on such particles having good electrical conductor power.
- the particle size of the conductive particles is preferably 0.2 to 20 / ⁇ ⁇ .
- the base film of the anisotropic conductive film is peeled off, and the anisotropic conductive film 20 is stuck on the substrate.
- the size L1 (for example, 2.0 to 3.Omm) of the anisotropic conductive film 20 is equal to the size L2 (for example, 1.8 to 2.8 mm) of the driving IC 30 as shown in FIG. ) Or slightly larger.
- an anisotropic conductive film is used, but the adhesive may be disposed by printing or potting instead of tape-like (film-like) adhesive.
- FIG. 1 (b) shows a process of positioning and temporarily fixing the driving IC 30 and face down with the bump (second electrode) 32 of the driving IC 30 on the anisotropic conductive film 20 facing down. Leave it still in the In the driving IC 30, for example, a bump 32 is formed on a pad electrode (not shown) Au-plated on Cu. A conductive pattern 13 of the lower glass substrate 12 is provided at a position facing the pad electrode.
- FIG. 1 (c) is a process of applying pressure and heating with the heater block 40 from the back surface of the driving IC 30.
- the bumps 32 are electrically connected to the conductive pattern 13 by the conductive particles 22 of the interposed anisotropic conductive film 20 as shown in FIG. Connect.
- the resin 21 of the anisotropic conductive film 20 is fixed when cooled, and the bump 32 of the driving IC 30 is fixed to the conductive pattern 13 of the lower glass substrate 12.
- the protruding portion 23 (uncured portion) of the resin occurs around the outer periphery of the driving IC 30.
- the grease of the protruding portion 23 around the outer periphery of the driving IC 30 is hardly cured.
- FIG. 1 (e) is a step of curing an uncured portion by laser irradiation.
- the laser generator 51 is used to irradiate the protruding portion 23 with the laser beam 51 to cure the resin.
- the protruding greaves are cured to prevent corrosion or the like of this portion.
- the uncured portion is cured by laser irradiation, but can be cured by energy waves other than laser.
- energy waves other than laser.
- far infrared rays, high frequency, etc. may be used.
- the uncured portion can be selectively irradiated and cured, so that the curing can be performed efficiently without damaging other parts of the circuit electrode. It can be carried out
- the above embodiment uses an anisotropic conductive adhesive, it is mounted with an isotropic conductive adhesive instead of the anisotropic conductive adhesive, and in the vicinity of the IC chip mounted face-down.
- After applying the liquid resin onto the circuit board heat the circuit board to reduce the viscosity of the liquid resin, and fill the gap between the IC chip and the circuit board with the reduced viscosity liquid resin.
- this embodiment has been described. So that the liquid crystal Using an energy wave such as laser light, the uncured part can be efficiently irradiated and cured so as not to affect the panel deflection plate.
- the anisotropic conductive adhesive is used in the above embodiment, a conductive paste is used in place of the anisotropic conductive adhesive, COG mounting is performed, and then the IC chip is mounted with a resin. The same effect can be obtained even if the present invention is used as a means for curing the peripheral resin.
- connection structure of the present invention can be widely used in the electrical / electronic field.
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- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
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Abstract
第一の基板(12)上に第一の電極(13)が形成された第一の回路部材に、接着剤(20)を仮止めし、第二の基板上に第二の電極(32)が形成された第二の回路部材(30)を、第一の電極(13)と第二の電極(32)の間に接着剤(20)を挟んで、第一の電極(13)と第二の電極(32)とを対向させた状態で、配置し、第一の電極(13)と第二の電極(32)の接続方向に、第二の回路部材(30)を加圧加熱して、第一の電極(13)と第二の電極(32)の間に介在する接着剤(20)を硬化させ、第二の回路部材(30)の外周よりはみだした接着剤の未硬化部分(23)に、エネルギー波(51)を照射させて硬化させる接続構造体の製造方法。
Description
明 細 書
接続構造体の製造方法
技術分野
[0001] 本発明は、相対向する回路基板を接着剤で接続する接続構造体の製造方法、特 に、液晶パネルのガラス基板上の透明電極に、異方性導電接着剤を用いて駆動用 I cを実装する液晶装置の製造方法に関する。
背景技術
[0002] 近年、携帯用の軽薄短小化した情報処理装置等が使用されている。この種の装置 では、表示装置として一般的に液晶装置が用いられている。 ICを実装した液晶装置 は、ファックス機器、携帯電話、オーディオ機器、家庭製品、液晶プリンタ、液晶プロ ジェクタ、液晶モニタ、液晶テレビジョン受像機と非常に多くの商品に使用されている
[0003] 最近は液晶セルのチップ 'オン'グラスと称される液晶駆動用 ICの実装方式におけ る導電部材が銀ペーストから異方性導電接着剤に変わってきている。特許文献 1に は、液晶パネルのガラス基板上の透明電極に駆動用 ICを直接実装する液晶装置の 製造方法が開示されている。
具体的には、液晶パネルのガラス基板の延出部に異方性導電接着剤を配設し、異 方性導電接着剤上に駆動用 ICをフェースダウンで位置決めした後、駆動用 ICの裏 面よりヒータブロックを使って、加圧 '加熱することにより駆動用 ICを実装している。
[0004] しかし、上記の方法では、駆動用 ICの下側の異方性導電接着剤は硬化する力 外 周周辺の異方性導電接着剤のはみ出した部分には未硬化部分が発生する。この異 方性導電接着剤の未硬化部分が水分を吸収し、電食現象、例えば、電流を流したと き透明電極が電気分解し (酸化インジウム力 Sインジウム単体になり)、断線し、通電し なくなる現象を起こす原因の一つとなる。
[0005] 尚、特許文献 2では、外周周辺にはみ出した未硬化の異方性導電接着剤に、熱風 を吹き付けることにより硬化させる方法が開示されている。
特許文献 1:特開昭 62— 244143号公報
特許文献 2 :特開 2001— 93936号公報
[0006] 本発明の目的は、接着剤の未硬化部分を硬化させて電食現象を防止する接続構 造体の製造方法を提供するものである。
発明の開示
[0007] 本発明によれば、以下の接続構造体の製造方法が提供される。
1.第一の基板上に第一の電極が形成された第一の回路部材に、接着剤を載置し、 第二の基板上に第二の電極が形成された第二の回路部材を、前記第一の電極と 前記第二の電極の間に前記接着剤を挟んで、前記第一の電極と前記第二の電極と を対向させた状態で、配置し、
前記第一の電極と前記第二の電極の接続方向に、前記第二の回路部材を加圧加 熱して、前記第一の電極と前記第二の電極の間に介在する接着剤を硬化させ、 前記第二の回路部材の外周よりはみだした接着剤の未硬化部分をエネルギー波 照射させて硬化させる接続構造体の製造方法。
2.前記接着剤が異方性導電接着剤であり、前記第一の回路部材が液晶パネルの ガラス基板であり、前記第二の回路部材が駆動用 ICである 1記載の接続構造体の製 造方法。
[0008] 本発明によれば、接着剤の未硬化部分を硬化させて電食現象を防止する接続構 造体の製造方法を提供できる。
図面の簡単な説明
[0009] [図 1]本発明の接続構造体の製造方法に係る一実施形態を示す工程図である。
発明を実施するための最良の形態
[0010] 以下図面に基づいて本発明の接続構造体の製造方法について説明する。
図 1は本発明の接続構造体の製造方法に係る一実施形態を示す工程図である。こ の実施形態では、液晶パネルのガラス基板 (第一の回路部材)を、異方性導電膜 (接 着剤)により、駆動用 IC (第二の回路部材)に接続する。
図 1 (a)は、異方性導電膜 20を基板上に貼付する工程を示す。
この図に示すように、液晶パネル 10の下ガラス基板 11の延出部 12上に形成された 導電パターン (第一の電極) 13上の所定の位置に、異方性導電膜 20を仮止めする。
異方性導電フィルム(図示せず)は、通常ベースフィルムとその上に膜状に積層さ れた異方性導電膜からなる。異方性導電膜は、通常、図 1 (d) , (e)に示すように、熱 可塑性榭脂等の絶縁性榭脂 21と導電粒子 22からなる。
[0011] ここで、ベースフィルムとしては、異方性導電膜のキャリアテープとして機能し、異方 性導電膜の基板への転着を阻害しない限り、その形成材料や厚み等に特に制限は ない。例えば、ポリテトラフルォロエチレン、剥離処理が施されたポリエチレンテレフタ レート(PET)フィルム等を使用することができる。
[0012] 異方性導電膜は、通常、絶縁性榭脂中に導電粒子を分散させたものであるが、絶 縁性榭脂ゃ導電粒子それ自体は、公知の異方性導電膜と同様とすることができる。 例えば、絶縁性榭脂としては、種々の熱硬化性接着剤や熱可塑性接着剤を使用 することができる。 ICチップ実装後の信頼性の点からは、エポキシ系榭脂、ウレタン 系榭脂、アタリレート系榭脂、 BTレジン榭脂等の熱硬化性接着剤を使用することが 好ましい。尚、これら榭脂成分から絶縁性榭脂を調製する場合に、単一種の榭脂成 分を使用してもよぐ複数種を混合して使用してもよい。
[0013] 一方、導電粒子としては、例えば、 Ni、 Ag、 Cu又はこれらの合金等からなる金属粉 、球状榭脂粒子の表面に金属メツキを施したもの等、電気的良導体力 なる粒子を 種々使用することができる。このような電気的良導体力もなる粒子上に絶縁被膜を形 成した粒子も使用することができる。また、導電粒子の粒径は、 0. 2〜20 /ζ πιとする ことが好ましい。
[0014] この工程 (a)にお 、ては、異方性導電フィルムのベースフィルムを剥がして、異方性 導電膜 20を基板上に貼付する。
異方性導電膜 20の大きさ L1 (例えば、 2. 0〜3. Omm)は、図 1 (b)に示すように、 駆動用 IC30の大きさ L2 (例えば、 1. 8〜2. 8mm)と同じか多少大きめに設定する。 尚、本実施形態では異方性導電膜を用いるが、接着剤をテープ状 (膜状)とする代 わりに、印刷塗布や、ポッティングにより配設してもよい。
[0015] 図 1 (b)は、駆動用 IC30を位置決め及び仮固定する工程で、異方性導電膜 20の 上に駆動用 IC30のバンプ (第二の電極) 32を下側にしてフェースダウンした状態で 静置する。
駆動用 IC30は、例えば、 Cu上に Auメツキされたパッド電極(図示せず)上にバン プ 32が形成されている。このパッド電極と相対する位置に下ガラス基板 12の導電パ ターン 13が設けられている。
[0016] 図 1 (c)は、駆動用 IC30の裏面よりヒータブロック 40で加圧 ·加熱する工程である。
駆動用 IC30の裏面からヒータブロック 40で、加圧'加熱すると、図 1 (d)に示すように 、バンプ 32が、介在する異方性導電膜 20の導電粒子 22により、導電パターン 13と 電気的に接続する。
また、異方性導電膜 20の榭脂 21は冷却すると固着し、駆動用 IC30のバンプ 32を 下ガラス基板 12の導電パターン 13に固定する。
このとき、駆動用 IC30の外周周辺には、榭脂のはみ出し部 23 (未硬化部分)が生 ずる。この駆動用 IC30の外周周辺のはみ出し部 23の榭脂はほとんど硬化していな い。
[0017] 図 1 (e)は、レーザー照射により未硬化部分を硬化させる工程である。レーザーを照 射する手段としては、例えば、レーザー発生装置 50を使用して、レーザー光 51をは み出し部 23に照射し、榭脂を硬化させる。
このようにはみ出し榭脂が硬化することにより、この部分の腐蝕等を防ぐことができる
[0018] 尚、本実施形態では、レーザー照射により未硬化部分を硬化させるが、レーザー以 外のエネルギー波により硬化させることができる。例えば、遠赤外線、高周波等を用 いてもよい。このように、エネルギー波により硬化させることにより、未硬化部だけを選 択的に照射して硬化させることができるため、回路電極の他の部分にダメージを与え ることなく、効率的に硬化を行うことができる
[0019] 尚、上記の実施形態は異方性導電接着剤を用いるが、異方性導電接着剤の代わ りに、等方性導電接着剤により実装し、フェースダウンで実装した ICチップの近傍の 回路基板上に液状の榭脂を塗布した後、回路基板を加熱して液状の榭脂を低粘度 化して ICチップと回路基板の間隙に低粘度化した液状の榭脂を充填し、さらに、高 Vヽ温度で液状の榭脂を硬化させる製造方法にお!、ても、 ICチップの外周周辺には み出した榭脂に未硬化部分が存在する場合は、本実施形態で説明したように、液晶
パネルの偏向板に影響しないように、レーザー光等のエネルギー波を使用して、未 硬化部分を効率良く照射して硬化させることができる。
[0020] また、上記の実施形態は異方性導電接着剤を用いるが、異方性導電接着剤の代 わりに導電ペーストを用い、 COG実装した後、榭脂でモールドする実装方法におい て ICチップ周辺の榭脂を硬化する手段として本発明を用いても同様な効果が得られ る。
産業上の利用可能性
[0021] 本発明の接続構造体の製造方法は、電気'電子分野で幅広く使用できる。
Claims
[1] 第一の基板上に第一の電極が形成された第一の回路部材に、接着剤を載置し、 第二の基板上に第二の電極が形成された第二の回路部材を、前記第一の電極と 前記第二の電極の間に前記接着剤を挟んで、前記第一の電極と前記第二の電極と を対向させた状態で、配置し、
前記第一の電極と前記第二の電極の接続方向に、前記第二の回路部材を加圧加 熱して、前記第一の電極と前記第二の電極の間に介在する接着剤を硬化させ、 前記第二の回路部材の外周よりはみだした接着剤の未硬化部分をエネルギー波 照射させて硬化させる接続構造体の製造方法。
[2] 前記接着剤が異方性導電接着剤であり、前記第一の回路部材が液晶パネルのガ ラス基板であり、前記第二の回路部材が駆動用 ICである請求項 1記載の接続構造体 の製造方法。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007529205A JPWO2007015367A1 (ja) | 2005-08-04 | 2006-07-18 | 接続構造体の製造方法 |
| CN2006800279973A CN101233608B (zh) | 2005-08-04 | 2006-07-18 | 连接构造体的制造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005226090 | 2005-08-04 | ||
| JP2005-226090 | 2005-08-04 |
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| Publication Number | Publication Date |
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| WO2007015367A1 true WO2007015367A1 (ja) | 2007-02-08 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/JP2006/314179 Ceased WO2007015367A1 (ja) | 2005-08-04 | 2006-07-18 | 接続構造体の製造方法 |
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| Country | Link |
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| JP (1) | JPWO2007015367A1 (ja) |
| KR (1) | KR20080031311A (ja) |
| CN (1) | CN101233608B (ja) |
| TW (1) | TW200708218A (ja) |
| WO (1) | WO2007015367A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008251827A (ja) * | 2007-03-30 | 2008-10-16 | Optrex Corp | 基板への電子回路の搭載方法 |
| CN102541353A (zh) * | 2010-08-13 | 2012-07-04 | 友达光电股份有限公司 | 电子装置 |
| CN111814126A (zh) * | 2015-01-21 | 2020-10-23 | 李振华 | 可动态组合和调整的个人工作系统 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102078019B1 (ko) * | 2012-11-28 | 2020-02-18 | 엘지디스플레이 주식회사 | 소수성 특성을 갖는 접착수단을 포함하는 표시장치 및 접착수단을 이용한 구동 ic의 실장 방법 |
| CN108901144A (zh) * | 2018-07-17 | 2018-11-27 | 天津瑞爱恩科技有限公司 | 增强印刷线路板软硬板组合强度的方法 |
| CN112327128B (zh) * | 2020-11-06 | 2021-05-14 | 法特迪精密科技(苏州)有限公司 | 一种测试装置及测试方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156114A (ja) * | 1999-09-14 | 2001-06-08 | Sony Chem Corp | 異方性導電接続体および製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153896A (ja) * | 1993-11-29 | 1995-06-16 | Toshiba Corp | 樹脂封止型半導体装置及びその製造方法 |
-
2006
- 2006-07-18 KR KR1020087001818A patent/KR20080031311A/ko not_active Ceased
- 2006-07-18 WO PCT/JP2006/314179 patent/WO2007015367A1/ja not_active Ceased
- 2006-07-18 CN CN2006800279973A patent/CN101233608B/zh not_active Expired - Fee Related
- 2006-07-18 JP JP2007529205A patent/JPWO2007015367A1/ja not_active Withdrawn
- 2006-07-26 TW TW095127332A patent/TW200708218A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156114A (ja) * | 1999-09-14 | 2001-06-08 | Sony Chem Corp | 異方性導電接続体および製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008251827A (ja) * | 2007-03-30 | 2008-10-16 | Optrex Corp | 基板への電子回路の搭載方法 |
| CN102541353A (zh) * | 2010-08-13 | 2012-07-04 | 友达光电股份有限公司 | 电子装置 |
| CN111814126A (zh) * | 2015-01-21 | 2020-10-23 | 李振华 | 可动态组合和调整的个人工作系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101233608B (zh) | 2011-02-02 |
| JPWO2007015367A1 (ja) | 2009-02-19 |
| CN101233608A (zh) | 2008-07-30 |
| KR20080031311A (ko) | 2008-04-08 |
| TW200708218A (en) | 2007-02-16 |
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