WO2006109534A1 - 情報記録媒体とその製造方法 - Google Patents
情報記録媒体とその製造方法 Download PDFInfo
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- WO2006109534A1 WO2006109534A1 PCT/JP2006/306010 JP2006306010W WO2006109534A1 WO 2006109534 A1 WO2006109534 A1 WO 2006109534A1 JP 2006306010 W JP2006306010 W JP 2006306010W WO 2006109534 A1 WO2006109534 A1 WO 2006109534A1
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- information recording
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to an information recording medium that records and / or reproduces information optically or electrically and a manufacturing method thereof.
- FIG. 5 shows the configuration of this information recording medium (DVD-RAM).
- the information recording medium shown in FIG. 5 has a first dielectric layer 102, a first interface layer 103, a recording layer 4, a second interface layer 105, and a second dielectric layer 106 on one surface of a substrate 1.
- the light absorption correction layer 7 and the reflection layer 8 have a seven-layer structure in which they are laminated in this order.
- the first dielectric layer 102 is arranged at a position closer to the laser beam incident side than the second dielectric layer 106.
- the first interface layer 103 and the second interface layer 105 have the same positional relationship.
- the information recording medium is arranged in the order of “first” and “first” from the one closest to the incident laser light power. Called “2”, “Third”.
- the first dielectric layer 102 and the second dielectric layer 106 increase the light absorption efficiency of the recording layer 4 by adjusting the optical distance, and reflectivity and recording layer when the recording layer 4 is in a crystalline phase. It has the function of increasing the signal amplitude by increasing the difference from the reflectivity when 4 is an amorphous phase.
- a mixed material of ZnS and SiO used as a dielectric layer material in this specification, ZnS-SiO
- ZnS -SiO has mechanical properties that increase the deposition rate during film formation.
- the thermal conductivity of the first dielectric layer 102 and the second dielectric layer 106 is low, the thermal force generated when laser light is incident on the recording layer 4 In the plane of the dielectric layer 102 or 106 To spread in the direction It quickly diffuses in the thickness direction from the recording layer 4 to the reflective layer 8.
- the thermal conductivity of the second dielectric layer 106 is low, the second dielectric layer 106 further insulates the recording layer 4 from the reflective layer 8.
- the degree of heat insulation between the recording layer 4 and the reflective layer 8 is larger, the recording layer 4 is cooled in a shorter time, and an amorphous mark (record mark) is more easily formed. When it is difficult to form a recording mark, it is necessary to record at a high peak power.
- the thermal conductivity of the dielectric layers 102 and 106 is high, recording is performed at a high peak power, so that the recording sensitivity of the information recording medium is low.
- the dielectric layers 102 and 106 in the information recording medium exist in the form of a film that is so thin that the thermal conductivity cannot be accurately measured. For this reason, the inventors of the present application employ the recording sensitivity of the information recording medium as a relative criterion for knowing the magnitude of the thermal conductivity of the dielectric layer.
- the recording layer 4 is formed using a material that crystallizes at high speed, including Ge—Sn—Sb—Te.
- An information recording medium having a powerful material as the recording layer 4 has not only excellent initial recording performance but also excellent recording storability and rewrite storability.
- the rewritable phase change information recording medium records, erases, and rewrites information by utilizing the reversible phase change of the recording layer 4 between the crystalline phase and the amorphous phase.
- the recording layer 4 is irradiated with high-power laser light (peak power) and rapidly cooled, the irradiated portion becomes an amorphous phase and a recording mark is formed.
- the recording layer 4 When the recording layer 4 is heated by irradiating a low-power laser beam (bias power) and gradually cooled, the irradiated portion becomes a crystalline phase and the recorded information is erased.
- bias power a low-power laser beam
- the repeated rewrite performance is represented by the maximum number of times that rewrite can be repeated within a range where the jitter value has no practical problem. It can be said that the higher the number of times, the better the rewrite performance.
- an information recording medium for data files is desired to have excellent repeated rewriting performance.
- the first interface layer 103 and the second interface layer 105 are formed between the first dielectric layer 102 and the recording layer 4. And the function of preventing mass transfer that occurs between the second dielectric layer 106 and the recording layer 4 (see, for example, Patent Document 2 and Patent Document 3). This is because the ZnS-SiO sulfur atoms (hereinafter referred to as S atoms) contained in the first and second dielectric layers 102 and 106 are repeatedly rewritten while the recording layer 4 is irradiated with laser light. Prevents diffusion into recording layer 4
- Non-Patent Document 1 it is already known that when a large amount of S atoms diffuses into the recording layer 4, the reflectance of the recording layer 4 is lowered and the repeated rewriting performance deteriorates (for example, see Non-Patent Document 1).
- the light absorption correction layer 107 adjusts the ratio AcZAa between the light absorption rate Ac when the recording layer 4 is in the crystalline state and the light absorption rate Aa when the recording layer 4 is in the amorphous state, and changes the mark shape at the time of rewriting. Has the function of suppressing distortion.
- the reflective layer 8 optically has a function of increasing the amount of light absorbed by the recording layer 4, and thermally diffuses the heat generated in the recording layer 4 quickly to quench the recording layer 4, thereby making the recording layer 4 non-conductive. It has a function of facilitating crystallisation.
- the reflective layer 8 also has a function of protecting the multilayer film from the use environment.
- the information recording medium shown in FIG. 5 has an excellent repetitive rewriting at a large capacity of 4.7 GB by adopting a structure in which seven layers each functioning as described above are laminated. Ensure performance and high reliability!
- the number of layers constituting the medium be as small as one. This is because the reduction in the number of layers can reduce the material cost, make the manufacturing equipment small and simple, and increase the production volume by shortening the manufacturing time, resulting in a reduction in the price of the media. .
- the interface layer has a thickness of 2 ⁇ ! It is a very thin layer of ⁇ 5nm and is structurally weak. Therefore, film breakage occurs during repeated recording, and as a result, atomic diffusion tends to occur. Therefore, it is desirable to eliminate the interface layer from the viewpoint of the stability of the information recording medium.
- Patent Document 1 Japanese Patent Laid-Open No. 2001-322357
- Patent Document 2 Japanese Patent Laid-Open No. 10-275360
- Patent Document 3 Pamphlet of International Publication No. 97Z34298
- Non-Patent Document 1 N. Yamada et al. Japanese Journal of Applied Physics, Vol. 37, 1998, pp. 2104- 2110
- An object of the present invention is to provide an information recording medium having high reliability and good repeated rewriting performance even when no interface layer is provided.
- the information recording medium of the present invention is an information recording medium that performs recording and Z or reproduction by irradiation of light or application of electrical energy, and includes at least one element selected from the group GM consisting of Sn and Ga, Ta and It has a material layer containing oxygen and at least one element selected from the group GL consisting of Y.
- the method for producing an information recording medium of the present invention comprises at least one element selected from the group GM consisting of Sn and Ga, at least one element selected from the group GL consisting of Ta and Y force, and oxygen.
- a material layer is formed by a sputtering method using the included sputtering target.
- the information recording medium and the manufacturing method thereof of the present invention the number of constituent layers is reduced, the recording sensitivity and the repetitive rewriting characteristics are excellent, and the information recording medium is highly productive. Can be manufactured by the method.
- the material used for the material layer in the information recording medium of the present invention has high adhesion to the recording layer with low thermal conductivity, the information recording medium to which electric energy is applied is used for recording. If the layer is used as a layer for thermal insulation, a phase change of the recording layer can be caused with a smaller electric energy.
- FIG. 1 is a partial cross-sectional view showing an example of an information recording medium according to Embodiment 1 of the present invention.
- FIG. 2 is a partial cross-sectional view showing an example of an information recording medium in Embodiment 2 of the present invention.
- FIG. 3 is a perspective view showing an example of the information recording medium of the present invention on which information is recorded by application of electrical energy.
- FIG. 4 is a schematic diagram showing an example of a system using the information recording medium shown in FIG.
- FIG. 5 is a partial sectional view showing an example of a conventional information recording medium. Explanation of symbols
- the material layer is formed in contact with the recording layer.
- the material layer In order to eliminate the interface layer, it is necessary to form the material layer with a material that does not cause the mass transfer of S, that is, a material system that does not contain S atoms.
- the material of the material layer (1) sufficient reflected light for ensuring efficient light absorption in the recording layer and recording the recorded information satisfactorily.
- the recording medium In order to secure the recording medium, it must have a certain degree of transparency with respect to the light of the wavelength to be recorded and reproduced, and (2) the information recording medium of the seven-layer structure provided with the interface layer or more. Recording sensitivity can be obtained, (3) Thermal stability and high melting point without melting even during repeated rewriting, and (4) High deposition rate during film formation to ensure productivity (5) Excellent reliability, etc. are desired.
- the material layer formed in contact with the recording layer comprises at least one element selected from the group GM consisting of Sn and Ga, and Ta and Y forces. It contains at least one element selected from the group GL and oxygen.
- the material layer By forming the material layer with such a material, it can be used for a dielectric layer of a conventional information recording medium, and ZnS-SiO
- the film forming speed equal to or higher than 2 can be realized, and since the element constituting the material layer does not contain S, there is no need to provide a separate interface layer when the material layer is used as a dielectric layer, and the recording / reproducing wavelength It is possible to form a dielectric layer having transparency with respect to the light.
- the information recording medium of the present invention is a medium for recording / reproducing information by irradiating light or applying electric energy.
- light irradiation is performed by irradiating a laser beam (that is, a laser beam), and application of electrical energy is performed by applying a voltage to a recording layer.
- a laser beam that is, a laser beam
- electrical energy is performed by applying a voltage to a recording layer.
- the material layer has the following formula:
- M represents at least one element selected from group GM
- L represents at least one element selected from group GL
- atomic% is a composition formula in which (Formula 1) is expressed based on the total number of "M” atoms, oxygen atoms, and “L” atoms (100%). It is shown that. In the following formulas, “atomic%” is also used for the same purpose.
- (Equation 1) represents only “M” atoms, oxygen atoms, and “L” atoms included in the material layer. Therefore, the material layer containing the material represented by (Formula 1) may contain components other than these atoms. Furthermore, in (Formula 1), it does not matter what kind of compound each atom exists.
- the material is specified by such a composition formula because it is difficult to determine the composition of the compound when examining the composition of the layer formed in the thin film.
- the elemental composition that is, the ratio of each atom
- the material represented by (Formula 1) it is considered that most of the elements M and L exist as an oxide together with oxygen atoms.
- the information recording medium of the present invention is an optical information recording medium
- a material layer containing an element selected from group GM, an element selected from group GL, and oxygen (hereinafter referred to as "oxide-based material layer") Is preferably used to form one or both of the two dielectric layers adjacent to the recording layer.
- the melting point of the main material system constituting the recording layer is 500 to 700 ° C.! / ⁇
- the elements constituting the group GM, ie, Sn and Ga oxides are Both have good moisture resistance and excellent thermal stability when the melting point is 1000 ° C or higher.
- a dielectric layer including a material having excellent thermal stability has excellent durability that is difficult to deteriorate even when information is repeatedly rewritten on an information recording medium including the dielectric layer.
- the elements constituting the group GL are excellent in light transmittance in a wide wavelength range, and are mixed with the above-mentioned group GM acids. Since there is almost no absorption, the recording sensitivity is reduced as a result, and the effect of improving the endurance of rewriting is obtained.
- Group GL Since this oxide has higher heat resistance than that of group GM, it has the effect of increasing the heat resistance of the material layer, and is also preferred for high speed recording characteristics and higher density. Any of the above oxides has good adhesion to a recording layer formed of a chalcogenide material. Therefore, an information recording medium in which this oxide material layer is formed as a dielectric layer is used.
- M in (Equation 1) is Sn
- Sn and Ga are further included.
- L in (Equation 1) is Y because the rewriting characteristics can be improved and the recording sensitivity can be secured.
- the oxide material layer at least one element selected from the group GM consisting of Sn and Ga and at least one selected from the group GL consisting of Ta and Y are used. Each of the two elements is considered to exist as an oxide together with oxygen, and can be specified as a layer containing these elements.
- the group of at least one element selected from the group GM is based on the amount of the group GL force combined with the group of at least one element selected from the group GM. (100 mol%), it is preferable that 30 mol% or more is contained. More preferably, 50 mol% to 95 mol% is contained.
- the term “acid group” means that the group GM force has two elements selected, and two kinds of oxides are included in the layer. Used to generically refer to acids The Alternatively, the term “acid group” refers only to the oxide when there is only one element selected from the group GM and one kind of oxide is included in the layer. . The same applies to elements selected from group GL.
- the oxide-based material layer is a compound other than those specified above (for example, such a compound is used for reasons such as thermal stability of the material layer, recording sensitivity, rewriting characteristics, and prevention of deterioration of moisture resistance). Also called “third component.”) May be included up to 10 mol%.
- the dielectric layer formed of the material specified above may contain some mol% or less of impurities or elements of the material composition constituting the adjacent layer.
- the ratio of the oxide group of the element selected from the group GM may be 30 mol% or more in order to prevent the film formation rate from decreasing.
- an oxide group of an element selected from the group GL is used in combination with an oxide, a material layer can be formed without significantly reducing the deposition rate.
- the material layer is an oxide of at least one element whose group GM force is also selected, preferably SnO and GaO force.
- an oxide of at least one element selected from the group GL force preferably Ta 2 O
- D represents at least one oxide selected from SnO and Ga 2 O forces
- A represents at least one oxide selected from SnO and Ga 2 O forces
- SnO and GaO have good moisture resistance and
- a preferred ratio of each compound is defined by X as described above.
- the preferred percentage of wrinkles is defined by X as described above.
- the above D is preferably added in an amount of 30 mol% or more as long as the film formation rate necessary for production can be secured.
- composition analysis of the oxide-based material layer present in the information recording medium of the present invention can be performed using, for example, an X-ray microanalyzer.
- the composition is obtained as the atomic concentration of each element.
- the oxide-based material layer described above may be provided so as to be in contact with both surfaces of the recording layer, preferably in contact with the recording layer, in the information recording medium of the present invention.
- the material layer in the information recording medium of the present invention may exist as an interface layer located between the recording layer and the dielectric layer.
- the information recording medium of the present invention preferably has a reversible phase change in the recording layer. That is, it is preferably provided as a rewritable information recording medium.
- the recording layers in which phase change occurs reversibly include Ge-Sb-Te, Ge—Sn—Sb—Te, Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb. — Bi—Te, Ge—Sn—Sb—Bi—Te, Ag—111-31) —Cho 6-Cho 31) —Choose one of the materials selected from C6. These are all high-speed crystallization materials. Therefore, when a recording layer is formed of these materials, an information recording medium can be obtained that can be recorded at a high density and a high transfer rate, and that is excellent in reliability (specifically, record storability or rewrite storability).
- the film thickness of the recording layer is 15 nm or less.
- the heat collected in the recording layer is diffused in the plane and is difficult to diffuse in the thickness direction, and it is possible to prevent the information rewriting from being hindered.
- the information recording medium of the present invention has a configuration in which a first dielectric layer, a recording layer, a second dielectric layer, and a reflective layer are formed in this order on one surface of a substrate. It may be.
- An information recording medium having this configuration is a medium that is recorded by light irradiation.
- the “first dielectric layer” refers to a dielectric layer that is closer to the incident light
- the “second dielectric layer” refers to the incident light. Dielectrics that are farther away Refers to the layer. That is, the irradiated light reaches the second dielectric layer from the first dielectric layer via the recording layer.
- the information recording medium having this configuration is used, for example, when recording / reproducing with a laser beam having a wavelength of about 660 nm.
- the information recording medium of the present invention is formed of at least one dielectric layer force of the first dielectric layer and the second dielectric layer as described above. It is preferable.
- both dielectric layers are formed of any of the above material layers! It is also possible to form a material layer of the same composition as well as a material layer of a different composition.
- a first dielectric layer, an interface layer, a recording layer, a second dielectric layer, a light absorption correction layer, and a reflection are formed on one surface of a substrate.
- Examples include an information recording medium in which the layers are formed in this order, and the second dielectric layer is formed of the oxide material layer and is in contact with the recording layer.
- the information recording medium of the present invention has a configuration in which a reflective layer, a second dielectric layer, a recording layer, and a first dielectric layer are formed in this order on one surface of a substrate. May be.
- This configuration is particularly employed when it is necessary to reduce the thickness of the substrate on which light is incident. For example, when recording / reproducing with a short wavelength laser beam having a wavelength of around 405 nm, the information recording medium having this configuration is used when the numerical aperture NA of the objective lens is increased to, for example, 0.85 and the focal position is shallow.
- the thickness of the substrate on which light is incident needs to be set to, for example, about 60 to 120 / ⁇ ⁇ , and a layer is formed on such a thin substrate surface. Is difficult. Therefore, the information recording medium having this configuration is specified as being configured by sequentially forming a reflective layer or the like on one surface of a substrate on which light is not incident.
- At least one dielectric layer of the first dielectric layer and the second dielectric layer is the above-described oxide-based material layer. If both dielectric layers are the above-mentioned oxide-based material layers, both dielectric layers may be the same or different layers! /.
- a reflection layer, a light absorption correction layer, a second dielectric layer, a recording layer, an interface layer, and a first dielectric layer are formed on one surface of a substrate.
- a reflection layer, a light absorption correction layer, a second dielectric layer, a recording layer, an interface layer, and a first dielectric layer are formed on one surface of a substrate.
- the second dielectric layer is the above-described oxide-based material layer.
- the information recording medium of the present invention may have two or more recording layers.
- Such an information recording medium has, for example, a single-sided two-layer structure in which two recording layers are laminated on one surface side of a substrate via a dielectric layer and an intermediate layer.
- a recording layer may be formed on both sides of the substrate. According to these structures, the recording capacity can be increased.
- the information recording medium of the present invention may have a structure in which a plurality of recording layers themselves are laminated. This is used when it is necessary to secure the characteristics by laminating the recording layer itself in order to achieve high density and high-speed recording, and at the interface of at least one of the laminated recording layers. In contact therewith, an oxide-based material layer may be formed.
- the method for producing an information recording medium of the present invention includes a step of forming a material layer included in the information recording medium of the present invention by a sputtering method.
- a material layer having substantially the same composition as that of the sputtering target can be formed. Therefore, according to this manufacturing method, an oxide-based material layer having a desired composition can be easily formed by appropriately selecting a sputtering target.
- M represents at least one element selected from group GM
- L represents at least one element selected from group GL
- Equation 3 corresponds to an equation expressing the material in terms of elemental composition, although most of the elements M and L may exist in the form of an oxide. According to this sputtering target, it is possible to form a dielectric layer containing the material represented by (Formula 1).
- M in (Equation 3) is Sn, it is more desirable if Sn and Ga are further included.
- the sputtering target preferably used is an oxide of at least one element selected from the group GM, preferably a small amount selected from SnO and GaO.
- It comprises at least one acid and an acid of at least one element selected from the group GL force, preferably at least one acid from which Ta O and YO forces are also selected. . That
- Such sputtering targets have the following yarn formula:
- D represents at least one oxide selected from SnO and Ga 2 O forces
- A represents at least one oxide selected from SnO and Ga 2 O forces
- the thing containing the material represented by can be used.
- D in (Formula 4) is SnO, SnO is more preferable.
- the characteristics are improved, which is more preferable.
- the inventors of the present invention calculated the element composition obtained by analyzing the sputtering target whose composition is so displayed with an X-ray microphone analyzer from the displayed composition table. It is confirmed that it is almost equal to the elementary composition (that is, the composition display (nominal composition) is appropriate). Therefore, a sputtering target provided as an oxide base material is also preferably used in the method for producing an information recording medium of the present invention.
- a sputtering target provided as an acid-based material comprises an elemental oxide group selected from the group GM and an acid group of at least one element selected from the group GL.
- the combined amount is the standard (100 mol%)
- the group GM power also contains 30 mol% or more of the selected acid and acid group, the productivity will be higher, more preferably 50 to 95 mol%. More preferred.
- the obtained oxide-based material layer also has a ratio of the oxide group consisting of the group GM of 30 mol% or more, and an information recording medium that gives the predetermined effect can be obtained.
- the oxide material layer represented by (Formula 1) or (Formula 2) may be formed in contact with at least one interface of the recording layer. ! ⁇ .
- FIG. 1 shows a partial cross section of the information recording medium.
- the information recording medium of the present embodiment has a first dielectric layer 2, a recording layer 4, a second dielectric layer 6, light absorption on one surface of a substrate 1.
- the correction layer 7 and the reflective layer 8 are laminated in this order, and the bonded substrate 10 is bonded to the reflective layer 8 with an adhesive layer 9. That is, the reflective layer 8 is formed on the light absorption correction layer 7, the light absorption correction layer 7 is formed on the second dielectric layer 6, and the second dielectric layer 6 is on the recording layer 4.
- the recording layer 4 is formed on the first dielectric layer 2.
- the information recording medium with this configuration can be used as a 4.7GBZDVD-RAM for recording and playback with a laser beam having a wavelength of around 660 nm.
- the information recording medium having this configuration is incident with a laser beam with one side of the substrate 1, and information is recorded and reproduced by the incident laser beam.
- the information recording medium of this embodiment is shown in FIG. 5 in that it does not have an interface layer between the recording layer 4 and the first and second dielectric layers 2 and 6, respectively. It is different from the conventional information recording medium.
- the substrate 1 is usually a transparent disk-shaped plate.
- a guide groove for guiding laser light may be formed on the surface on the side where the first dielectric layer 2 and the recording layer 4 are formed, as shown in FIG.
- the guide groove is formed in the substrate 1, when the cross section of the substrate 1 is viewed, a group portion and a land portion are formed. It can be said that the group part is located between two adjacent land parts. Therefore, the surface of the substrate 1 on which the guide groove is formed is connected by the side wall. The top surface and the bottom surface are separated.
- the surface on the side closer to the laser beam is referred to as a “group surface” for convenience, and the surface on the side far from the laser beam is referred to as “land surface” for convenience.
- the bottom surface 20 of the guide groove of the substrate 1 corresponds to a group surface
- the top surface 21 corresponds to a land surface. The same applies to the information recording medium shown in FIG. 2 described in the second embodiment described later.
- the step difference between the group surface 20 and the land surface 21 of the substrate 1 is preferably 40 nm to 60 nm.
- the step between the group surface 20 and the land surface 21 is preferably within this range. Further, it is desirable that the surface of the substrate 1 on which the other layers are not formed is smooth.
- the material of the substrate 1 include a resin such as polycarbonate, amorphous polyolefin, or polymethyl methacrylate (PMMA), or a material having optical transparency such as glass. In view of moldability, price, and mechanical strength, polycarbonate is preferably used.
- the thickness of the substrate 1 is about 0.5 to 0.7 mm.
- the recording layer 4 is a layer in which a recording mark is formed by causing a phase change between a crystalline phase and an amorphous phase by light irradiation or application of electrical energy. If the phase change is reversible, it can be erased or rewritten.
- the reversible phase change material it is preferable to use Ge—Sb—Te or Ge—Sn—Sb—Te, which is a high-speed crystallization material. Specifically, in the case of Ge—Sb—Te, a GeTe—Sb Te pseudo-binary composition is preferable.
- Ge—Sn—Sb—Te has a faster crystallization rate than Ge—Sb—Te.
- Ge—Sn—Sb—Te is obtained by, for example, replacing a part of Ge having a Ge Te—Sb Te pseudo-binary composition with Sn. Recording layer 4
- the Sn content is preferably 20 atomic% or less. As a result, it is possible to prevent the crystallization speed from being excessively high, the stability of the amorphous phase being impaired, and the reliability of the recording mark from being lowered.
- the Sn content can be adjusted according to the recording conditions.
- the recording layer 4 is made of Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, or It can also be formed of a material containing Bi, such as Ge Sn—Sb—Bi—Te. Bi is easier to crystallize than Sb. Therefore, the crystallization speed of the recording layer can also be improved by substituting at least a part of Sb of Ge Sb Te or Ge Sn—Sb Te with Bi.
- Ge Bi—Te is a mixture of GeTe and Bi Te. In this mixture, 8Bi
- Te ⁇ GeTe ⁇ 25Bi Te is preferable. This reduces the crystallization temperature
- Ge Sn-Bi-Te corresponds to a part of Ge Bi-Te in which Ge is replaced with Sn.
- the Sn substitution is more suitable for fine adjustment of the crystallization speed of the recording layer 4 than the Bi substitution.
- the Sn content is preferably 10 atomic% or less.
- GeSn-Sb-Bi-Te corresponds to a part of Ge Sb-Te in which part of Ge is replaced with Sn and part of Sb is replaced with Bi. This includes GeTe, SnTe, Sb Te and Bi Te
- the Bi content is preferably 10 atomic% or less.
- the Sn content is preferably 20 atomic% or less. This is because, if the contents of Bi and Sn are within this range, good recording mark storability can be obtained.
- phase change reversibly include, for example, Ag-In-Sb-Te, Ag
- Examples include In—Sb—Te—Ge and Sb—Te containing 70 atomic% or more of Sb.
- the irreversible phase change material for example, ⁇ ⁇ + a (a is Pd, Ge, etc.) is used. It is preferable.
- An information recording medium in which the recording layer 4 is an irreversible phase change material can be recorded only once, and is a so-called write-once type. Even in such an information recording medium, there is a problem in that the atoms in the dielectric layer diffuse into the recording layer due to heat during recording, and the signal quality is lowered. Therefore, the present invention is preferably applied to a write-once type information recording medium that uses only a rewritable information recording medium.
- the thickness of the recording layer 4 is preferably 15 nm or less, and more preferably 12 nm or less. .
- the first dielectric layer 2 and the second dielectric layer 6 are composed of an oxide of at least one element selected from the group GM composed of Sn and Ga force, and a group GL composed of Ta and Y.
- the material of the dielectric layer constituting the information recording medium is (1) transparent (extinction coefficient is 0.1 or less, more preferably 0.05 or less), (2) dielectric Recording sensitivity equal to or higher than the configuration in which an interface layer is provided between the body layer and the recording layer; (3) high melting point; no melting during recording; (4) film formation speed And (5) good adhesion to the recording layer 4 formed of a chalcogenide material.
- the transparency is a characteristic necessary for allowing the laser beam incident on the side of the substrate 1 to pass and reach the recording layer 4. This characteristic is particularly required for the first dielectric layer 2 on the incident side.
- the materials of the first and second dielectric layers 2 and 6 are such that the information recording medium obtained is an information recording medium in which an interface layer is located between a conventional dielectric layer made of ZnSSiO and the recording layer. Same as recording medium
- the recording sensitivity It is necessary to select the recording sensitivity to be equal to or higher than that.
- a high melting point is necessary to ensure that the materials of the first and second dielectric layers 2 and 6 do not enter the recording layer 4 when irradiated with laser light having a peak power level. This characteristic is required for both the first and second dielectric layers 2 and 6.
- the materials of the first and second dielectric layers 2 and 6 are mixed into the recording layer 4, the repeated rewrite performance is significantly lowered.
- Good adhesion to the recording layer 4, which is a chalcogenide material is a characteristic necessary to ensure the reliability of the information recording medium.
- the first and second dielectric layers 2, 6 Both are required. In order to obtain good productivity, a high deposition rate is also required.
- the oxides of the elements constituting the group GM are all transparent, have a high melting point, and are excellent in thermal stability. Good adhesion to the layer. Therefore, according to these compounds, it is possible to ensure good repeated rewriting performance of the information recording medium.
- the oxides of the elements constituting the group GL are mixed with the oxides of the elements constituting the group GM, which have good adhesion to the recording layer, thereby reducing the heat conduction and improving the recording sensitivity. Film cracking and film breakage due to repeated rewriting recording can be suppressed, and as a result, the recording sensitivity and reliability of the information recording medium can be achieved.
- the oxides of the elements constituting the group GM include SnO and GaO.
- group GL is configured.
- Examples of the acid oxide of the element to be formed include Ta 2 O and Y 2 O. Where wavelength 66
- Table 1 shows examples of the refractive index n and extinction coefficient k of Onm laser light.
- the first dielectric layer 2 and the second dielectric layer 6 are formed so as to be in contact with the recording layer 4 by using a material not containing S, which is a mixture of these oxides.
- a material not containing S which is a mixture of these oxides.
- the oxides of the elements constituting the group GM are mixed with the oxides of the elements constituting the group GL to complicate the layer structure, so that the heat conduction in the first and second dielectric layers 2 and 6 is improved. Is suppressed. Therefore, if the oxide-based material layer is used for the first and second dielectric layers 2 and 6, the effect of quenching the recording layer can be enhanced, so that the recording sensitivity of the information recording medium can be increased.
- a specific example of such an oxide-based material is, for example, (Formula 2), that is, (D) (A) (mol%)
- D is a small amount selected from SnO and GaO.
- At least one oxide, and A is at least one selected from Ta 2 O and Y 2 O
- the oxide-based material layer may contain a third component other than the compounds shown above, and may contain impurities of several percent or less.
- the thermal stability and moisture resistance do not change, and they are preferably used as the first dielectric layer 2 and the second dielectric layer 6.
- the third component is inevitably included or unavoidably formed when the dielectric layer is formed of the oxide-based material layer. Examples of the third component include dielectrics, metals, metalloids, semiconductors, and Z or nonmetals.
- the dielectric contained as the third component is, for example, Al 2 O, Bi 2 O, CeO, CoO, Cr 2 O,
- Metals included as the third component are, for example, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ni ⁇ Pd, Pt, Cu, Ag , Au, Zn, La, Ce, Nd, Sm, Gd, Tb, Dy and Yb etc.
- the semimetal and semiconductor contained as the third component are, for example, C, Ge, and the like, and the nonmetal is, for example, Sb, Bi, Te, Se, and the like.
- the first dielectric layer 2 and the second dielectric layer 6 may be formed of acid-based material layers having different compositions from each other.
- the first dielectric layer 2 is preferably formed of a material having a higher moisture resistance.
- D in (Formula 2) and (Formula 4) is SnO.
- SnO and GaO are further preferred. Also,(
- a in (Equation 2) and (Equation 4) is Y 2 O.
- the oxide-based material layer can be formed by optimizing the kind of oxide and Z or a mixing ratio thereof according to a desired function.
- the first dielectric layer 2 and the second dielectric layer 6 have different optical path lengths (that is, the product nd of the refractive index n of the dielectric layer and the film thickness d of the dielectric layer).
- the phase difference ⁇ can be adjusted. In order to increase the reproduction signal amplitude of the recording mark and improve the signal quality, it is desirable that the reflectance difference (IRc—RaI) or the reflectance ratio (RcZRa) is large.
- the optical path lengths of the first dielectric layer 2 and the second dielectric layer 6 are determined so as to satisfy these conditions simultaneously.
- the optical path length satisfying these conditions can be accurately determined by calculation based on the matrix method, for example.
- the oxide material layer described above has a different refractive index depending on its composition.
- the refractive index of the dielectric layer is n
- the film thickness is d (nm)
- the wavelength of the laser beam is (nm)
- a is a positive number.
- the optical path lengths (a ⁇ ) of the first dielectric layer 2 and the second dielectric layer 6 were determined by calculation based on the matrix method so that these preferable conditions were satisfied simultaneously.
- the thickness d of the dielectric layer was obtained from the obtained optical path length (a) and ⁇ and ⁇ .
- the first dielectric layer 2 is formed of a material represented by the composition formulas (Formula 1) and (Formula 2) and having a refractive index n of 1.8 to 2.4
- the thickness is preferably between 110 nm and 160 nm.
- the second dielectric layer 6 is formed of this material, it has been found that the thickness is preferably 35 to 60 nm.
- the light absorption correction layer 7 is rewritten by adjusting the ratio AcZAa between the light absorption rate Ac when the recording layer 4 is in the crystalline state and the light absorption rate Aa when the recording layer 4 is in the amorphous state. Sometimes it works to prevent distortion of the mark shape.
- the light absorption correction layer 7 is preferably formed of a material having a high refractive index and appropriately absorbing light. For example, the refractive index n is 3 to 5,
- the light absorption correction layer 7 can be formed using a material having an attenuation coefficient k force Si and 4 or less.
- amorphous Ge alloys such as Ge-Cr and Ge-Mo
- amorphous Si alloys such as Si-Cr, Si-Mo, and Si-W
- Te compounds Te compounds
- Ti titanium
- a material selected from crystalline metals, semimetals and semiconductor materials such as Zr, Nb, Ta, Cr, Mo, W, SnTe, and PbTe.
- the thickness of the light absorption correction layer 7 is 20 ⁇ ! Preferably it is ⁇ 50nm.
- the reflective layer 8 optically increases the amount of light absorbed by the recording layer 4, and thermally diffuses the heat generated in the recording layer 4 quickly, thereby rapidly cooling the recording layer 4 to be amorphous. Has a function to facilitate quality improvement. Further, the reflective layer 8 also has a function of protecting the multilayer film including the recording layer 4 and the dielectric layers 2 and 6 from the use environment. Examples of the material of the reflective layer 8 include simple metal materials having high thermal conductivity such as Al, Au, Ag, and Cu. The reflective layer 8 is made of the above metal material for the purpose of improving its moisture resistance and for adjusting Z or thermal conductivity or optical properties (for example, light reflectance, light absorption or light transmittance).
- an alloy material such as Al—Cr, Al—Ti, Ag—Pd, Ag—Pd—Cu, Ag—Pd—Ti ⁇ Ag—In, or Au—Cr can be used. All of these materials are excellent materials having excellent corrosion resistance and a rapid cooling function.
- a similar object can be achieved by forming the reflective layer 8 with two or more layers.
- the thickness of the reflective layer 8 is preferably 50 to 180 nm, and 60 ⁇ ! More preferably ⁇ 120nm! /.
- the adhesive layer 9 may be formed using a material having high heat resistance and high adhesiveness, such as an ultraviolet curable resin.
- a material having high heat resistance and high adhesiveness such as an ultraviolet curable resin.
- a photo-curing material mainly composed of attalylate resin or metatalylate resin, a material mainly composed of epoxy resin, or a hot melt material can be used.
- a protective coating layer made of ultraviolet curable resin and having a thickness of 2 to 20 / ⁇ ⁇ may be provided on the surface of the reflective layer 8 before the adhesive layer 9 is formed.
- the thickness of the adhesive layer 9 is preferably 15 to 60 ⁇ m, more preferably 20 to 40 ⁇ m.
- the bonded substrate 10 has a function of increasing the mechanical strength of the information recording medium and protecting the laminated body from the first dielectric layer 2 to the reflective layer 8.
- the preferred V and material of the bonded substrate 10 are the same as the preferred material of the substrate 1.
- the information recording medium of the present embodiment is a single-sided structure disk having one recording layer. The power is not limited to this, and may have two or more recording layers.
- a substrate 1 (for example, a thickness of 0.6 mm) on which guide grooves (group surface 20 and land surface 21) are formed is arranged in a film forming apparatus, and substrate 1
- the first dielectric layer 2 is formed on the surface where the guide groove is formed (step a), the recording layer 4 is formed (step b), and the second dielectric layer 6 is formed.
- the step of forming the film (step c), the step of forming the light absorption correction layer 7 (step d), and the step of forming the reflective layer 8 (step e) are sequentially performed, and further adhered to the surface of the reflective layer 8 It is manufactured by performing the step of forming the layer 9 and the step of bonding the bonded substrate 10 together.
- the term “surface” for each layer refers to the surface exposed when each layer is formed (a surface perpendicular to the thickness direction) unless otherwise specified.
- Step a is performed by sputtering, and is performed in an Ar gas atmosphere using a high-frequency power source.
- the gas introduced by sputtering depends on the material layer to be formed, in addition to Ar gas, oxygen gas, nitrogen gas, CH
- the sputtering target used in step a includes an oxide of at least one element selected from the group GM consisting of Sn and Ga, and at least one element selected from the group GL consisting of Ta and Y A sputtering target containing an acid oxide is used.
- the sputtering target including at least one element selected from group GM, at least one element selected from group GL, and an oxygen atom is more specifically represented by (formula 3) That is, it is a material represented by MOL (atomic%).
- M is the group GM
- L represents at least one element selected from the group GL, h2, i2 and j2 represent 5 ⁇ h2 ⁇ 40, 40 ⁇ i2 ⁇ 70, 0 ⁇ j2 ⁇ 35, h2
- the sputtering target used in the production method of the present invention is selected from the group GM. It is preferable that the oxide group of the element contains 30 mol% or more with respect to the mixture, more preferably 50 to 95 mol%.
- D is selected from SnO and GaO.
- A is at least selected from Ta 2 O and Y 2 O
- X which represents one oxide and indicates the mixing ratio of each compound, can be used for targets containing materials that satisfy 30 ⁇ x ⁇ 95. According to this target, a layer containing the material represented by (Equation 2) can be formed.
- the layer containing the above material may contain a third component other than these compounds, and may contain impurities of several percent or less. Moreover, the composition elements of the layers formed in the vicinity may be mixed somewhat.
- the components that can be included as the third component are as exemplified above.
- step b is performed to form the recording layer 4 on the surface of the first dielectric layer 2.
- Step b is also performed by a sputtering method. Sputtering is performed in a Ar gas atmosphere or a mixed gas atmosphere of Ar gas and N gas using a DC power source. Same as step a
- Sputtering targets are Ge Sb Te, Ge Sn—Sb Te, Ge Bi Te, Ge Sn—Bi Te, Ge Sb—Bi Te, Ge Sn—Sb—Bi—Te ⁇ Ag—In—Sb—Te and Sb—Te. Of these, use one containing any one of the materials.
- the recording layer 4 after film formation is in an amorphous state.
- Step c is performed to form a second dielectric layer 6 on the surface of the recording layer 4.
- Step c is performed in the same manner as step a.
- the second dielectric layer 6 may be formed using a sputtering target having a different mixing ratio of the same compound as the first dielectric layer 2 or a sputtering target containing a different oxide.
- the first dielectric layer 2 is made of SnO -Ta 2 O
- the second dielectric layer 6 is formed of a mixed material of 2 2 5 and a mixed material of SnO 2 -Ga 2 O 2 O.
- step d is performed to form a light absorption correction layer 7 on the surface of the second dielectric layer 6.
- sputtering is performed using a direct current power source or a high frequency power source.
- Sputtering targets include amorphous Ge alloys such as Ge—Cr and Ge—Mo, amorphous Si alloys such as Si—Cr, Si—Mo and Si—W, Te compounds, and Ti, Zr, Nb, T Use a material selected from crystalline metals such as a, Cr, Mo, W, SnTe, and PbTe, metalloids, and semiconductor materials. Sputtering is generally performed in an Ar gas atmosphere.
- step e is performed to form the reflective layer 8 on the surface of the light absorption correction layer 7.
- Step e is performed by sputtering. Sputtering is performed in an Ar gas atmosphere using a DC power source or a high frequency power source.
- a sputtering target an alloy material such as Al—Cr, A1—Ti, Ag—Pd, Ag—Pd—Cu, Ag—Pd—Ti, Ag—In, or Au—Cr can be used.
- steps a to e are all sputtering steps. Therefore, steps a to e can be continuously performed by sequentially changing the target in one sputtering apparatus. Further, steps a to e can be performed by using independent sputtering apparatuses.
- the substrate 1 on which the first dielectric layer 2 to the reflective layer 8 are sequentially laminated is taken out by the sputtering apparatus.
- an ultraviolet curable resin is applied to the surface of the reflective layer 8 by, for example, a spin coating method.
- the bonded substrate 10 is brought into close contact with the applied ultraviolet curable resin, and the resin is cured by irradiating ultraviolet light from the bonded substrate 10 side to complete the bonding process.
- the initialization step is a step of crystallizing the recording layer 4 in an amorphous state by irradiating, for example, a semiconductor laser and raising the temperature to a temperature higher than the crystallization temperature.
- the initialization process may be performed before the bonding process.
- the information recording medium of Embodiment 1 can be manufactured by sequentially performing the steps a to e, the adhesive layer forming step, and the bonding substrate 10 bonding step.
- FIG. 2 shows a partial cross section of the information recording medium.
- the information recording medium of the present embodiment shown in FIG. 2 has a first dielectric layer 102, a first interface layer 103, a recording layer 4, a second dielectric layer 6, and light on one surface of a substrate 1.
- the absorption correction layer 7 and the reflection layer 8 are formed in this order, and the bonding substrate 10 is bonded to the reflection layer 8 by the adhesive layer 9.
- the information recording medium of the present embodiment has an interface layer between the recording layer 4 and the second dielectric layer 6, except that the conventional information recording medium shown in FIG. Is different. 1 is different from the information recording medium shown in FIG.
- the second dielectric layer 6 is formed of an oxide material layer similar to the first and second dielectric layers in the information recording medium of the first embodiment.
- the first dielectric layer 102 is made of a material (ZnS) used for the dielectric layer formed as a conventional information recording medium. SiO)
- the interface layer 103 is provided in order to prevent mass transfer that occurs between the first dielectric layer 102 and the recording layer 4 due to repeated recording.
- the interface layer 103 is preferably made of a mixed material such as ZrO SiO—CrO or Ge Cr.
- the thickness is preferably 1 to 10 nm, more preferably 2 to 7 nm.
- step h the step of forming the first dielectric layer 102 on the surface of the substrate 1 where the guide groove is formed (step h), the step of forming the first interface layer 103 (step) i), the step of forming the recording layer 4 (step b), the step of forming the second dielectric layer 6 (step c), the step of forming the light absorption correction layer 7 (step d), and the reflective layer
- step e the step of forming a film 8 is sequentially performed, and further the step of forming the adhesive layer 9 on the surface of the reflective layer 8 and the step of bonding the bonded substrate 10 are performed. More manufactured.
- steps b, c, d, and e are as described in the first embodiment, detailed description thereof is omitted here.
- an initialization process is performed as necessary to obtain an information recording medium as described in connection with the first embodiment.
- the information recording medium for recording / reproducing with laser light has been described as an embodiment of the information recording medium of the present invention with reference to FIG. 1 and FIG.
- the information recording medium of the present invention is not limited to these forms.
- the information recording medium of the present invention can take any form as long as the dielectric layer in contact with the recording layer is formed using an oxide-based material layer. That is, the present invention can be applied regardless of the order in which layers are formed on the substrate, the number of recording layers, the recording conditions, the recording capacity, and the like.
- the information recording medium of the present invention is suitable for recording at various wavelengths.
- the configuration and manufacturing method of the information recording medium of the present invention can be recorded and reproduced with, for example, D VD -RAM ⁇ D VD -RW, which records and reproduces with a laser beam having a wavelength of 630 to 680 nm, or It can be applied to a large capacity optical disk.
- FIG. 3 shows a perspective view of an example of an information recording medium for recording and reproducing information by applying electric energy.
- the information recording medium of the present embodiment is a memory in which the lower electrode 202, the recording unit 203, and the upper electrode 204 are formed in this order on the surface of the substrate 201.
- the memory recording unit 203 includes a cylindrical recording layer 205 and a dielectric layer 206 surrounding the recording layer 205.
- the recording layer 205 and the dielectric layer 206 are formed on the same plane. They are not in a laminated relationship.
- both the recording layer 205 and the dielectric layer 206 constitute part of the laminated body including the substrate 201, the lower electrode 202, and the upper electrode 204 in the memory, they can be called “layers”. It is. Therefore, the information recording medium of the present invention includes those in which the recording layer and the dielectric layer are on the same plane.
- the substrate 201 for example, a semiconductor substrate such as a Si substrate, polycarbonate, etc. Insulating bases such as substrates that have coercive or acrylic resin, SiO substrates, Al O substrates, etc.
- the lower electrode 202 and the upper electrode 204 are formed of a suitable conductive material.
- the lower electrode 202 and the upper electrode 204 are formed, for example, by sputtering a metal such as Au, Ag, Pt, Al, Ti, W, Cr, or a mixture thereof.
- the recording layer 205 constituting the recording unit 203 is made of a material that changes phase when electric energy is applied, and can also be referred to as a phase change unit in the recording unit 203.
- the recording layer 205 is formed of a material that changes phase between a crystalline phase and an amorphous phase by Joule heat generated by applying electrical energy. Examples of the material of the recording layer 205 include Ge—Sb—Te, Ge—Sn—Sb—Te, Ge—Bi—Te, Ge—Sn—Bi—Te ⁇ Ge-Sb—Bi—Te, and Ge—Sn—.
- Sb—Bi—Te based materials are used, and more specifically, for example, GeTe—Sb Te based materials or GeTe—Bi Te based materials can be used.
- the dielectric layer 206 constituting the recording unit 203 prevents a current flowing through the recording layer 205 from escaping to the peripheral part by applying a voltage between the upper electrode 204 and the lower electrode 202.
- the recording layer 205 has a function of electrically and thermally insulating. Therefore, the dielectric layer 206 can also be referred to as a heat insulating part.
- the dielectric layer 206 is formed of an oxide-based material layer, and is specifically a layer containing a material represented by (Formula 1) and (Formula 2). These materials are preferably used for the dielectric layer 206 because of their high melting point, difficulty in diffusing atoms in the material layer even when heated, and low thermal conductivity.
- the nominal composition that is, the target manufacturer publicly displays the target when supplying it.
- the relationship between the composition and the analysis composition was previously confirmed by a test.
- the sputtering target was powdered and composition analysis was performed by the X-ray microanalyzer method. This result As a result, the analytical composition of the sputtering target was obtained as a composition formula represented by the ratio of each element (atomic 0 / o). The analysis results are shown in (Table 2). Furthermore, (Table 2) also shows the converted composition, which is the elemental composition calculated from the nominal composition.
- the analytical composition was almost equal to the converted composition. From this result, the actual composition (ie, analytical composition) of the sputtering target expressed by (Equation 3) and (Equation 4) is almost the same as the elemental composition (ie, converted composition) obtained by calculation. It was confirmed that the nominal composition was correct. Therefore, in the following examples, the composition of the sputtering target is expressed as a nominal composition (mol%). Further, it was considered that the nominal composition of the sputtering target and the composition (mol%) of the oxide-based material layer formed by sputtering using this sputtering target can be regarded as the same. Therefore, in the following examples, the composition of the layer formed by using the sputtering target was indicated with the indication of the spun target of the sputtering target.
- the nominal composition of the first dielectric layer 2 and the second dielectric layer 6 is represented by (SnO 2) (YO 2) (mol%).
- a ring target was used to form.
- the first dielectric layer 2 and the second dielectric layer 6 were formed of the same material.
- a method for manufacturing the information recording medium of this example will be described. In the following description, the same reference numbers as those of the components shown in FIG. 1 are used.
- substrate 1 has a depth of 56 nm and a track pitch (distance between the center of the group surface and land surface in a plane parallel to the main surface of substrate 1).
- a guide groove of 0.615 m is provided in advance on one surface.
- a circular polycarbonate substrate having a diameter of 120 mm and a thickness of 0.6 mm was used.
- a first dielectric layer 2 having a thickness of 145 nm, a recording layer 4 having a thickness of 8 nm, and a thickness having a thickness of 45 nm
- a second dielectric layer 6 a light absorption correction layer 7 having a thickness of 40 nm, and a reflection layer 8 having a thickness of 80 nm were formed in this order by the sputtering method as described below.
- the sputtering target (diameter 100 mm, thickness 6 mm) having the above-mentioned material force is attached to the film forming apparatus, and the pressure is adjusted to 0.13 Pa. Then, high frequency sputtering was performed to form a film.
- the step of forming the recording layer 4 is performed by placing a part of Ge having a GeTe—Sb Te pseudo-binary composition with Sn.
- a sputtering target (diameter 100 mm, thickness 6 mm) made of the replaced Ge—Sn—Sb—Te-based material was attached to the film forming apparatus, and direct current sputtering was performed at 0.13 Pa.
- the composition of the recording layer was Ge Sn Sb Te (atomic%).
- the step of forming the light absorption correction layer 7 also includes a material force whose composition is Ge Cr (atomic%).
- a sputtering target (diameter 100 mm, thickness 6 mm) was attached to the film forming apparatus, and DC sputtering was performed at about 0.4 Pa.
- a sputtering target (diameter: 100 mm, thickness: 6 mm) made of Ag—Pd—Cu alloy force is attached to the film forming apparatus, and DC sputtering is performed at about 0.4 Pa. did.
- an ultraviolet curable resin was applied on the reflective layer 8.
- a polycarbonate bonded substrate 10 having a diameter of 120 mm and a thickness of 0.6 mm was brought into close contact with the applied ultraviolet curable resin.
- ultraviolet rays were irradiated from the side of the bonded substrate 10 to harden the resin and bonded together.
- First dielectric layer 2 and second dielectric layer 6 are nominally (SnO 2) (Ta 2 O 3) (mol%)
- Example 3 It was produced in the same manner as in the case of the information recording medium of Example 1, except that it was formed using a sputtering target whose composition was indicated. [0117] (Example 3)
- First dielectric layer 2 and second dielectric layer 6 are nominally paired with (SnO) (Y O) (mol%).
- the first dielectric layer 2 and the second dielectric layer 6 are mixed with (SnO) (Y O) (Ta O) (mol%
- First dielectric layer 2 and second dielectric layer 6 are nominally paired with (SnO) (Y O) (mol%).
- First dielectric layer 2 and second dielectric layer 6 are mixed with (SnO) (Ga O) (Y O) (mol%
- First dielectric layer 2 and second dielectric layer 6 are mixed with (SnO) (Ga O) (Y O) (mol%
- the first dielectric layer 2 and the second dielectric layer 6 are mixed with (SnO) (Ga O) (Ta O) (mol
- the first dielectric layer 2 and the second dielectric layer 6 are mixed with (Ga O) (Ta O) (Y O) (mol%
- the recording medium was manufactured in the same manner as in the information recording medium of Example 1, except that it was formed using a sputtering target whose nominal composition was displayed in (1). [0124] (Example 10)
- First dielectric layer 2 and second dielectric layer 6 are mixed with (SnO) (Ta O) (Y O) (mol%
- First dielectric layer 2 and second dielectric layer 6 are mixed with (SnO) (Ta O) (Y O) (mol%
- the recording medium was manufactured in the same manner as in the information recording medium of Example 1, except that it was formed using a sputtering target whose nominal composition was displayed in (1).
- the first dielectric layer 102 and the second dielectric layer 106 are made of ZnS—SiO sputtering.
- the first interface layer 103 and the second interface layer 105 were each 5 nm thick layers made of ZrO—SiO—CrO.
- the first dielectric layer 102 and the second dielectric layer 106 are made of (ZnS) (SiO 2) (mol%).
- the first interface layer 103 and the second interface layer 105 are composed of (ZrO) (SiO) (CrO) (mol%
- a sputtering target (diameter: 100 mm, thickness: 6 mm) made of a material having a composition of) was attached to a film forming apparatus and formed by high frequency sputtering.
- the other bonding with the light absorption correction layer 7, the reflection layer 8, and the bonded substrate 10 is the same as that of the information recording medium of Example 1.
- the first dielectric layer 2 and the second dielectric layer 6 were displayed with a nominal composition of SnO only
- the first dielectric layer 2 and the second dielectric layer 6 were displayed with a nominal composition of GaO only.
- the first dielectric layer 2 and the second dielectric layer 6 are bonded to the sphere with the nominal composition of Y 2 O only.
- the first dielectric layer 2 and the second dielectric layer 6 are made to have a nominal (SnO 2) (Ga 2 O 3) (mol%)
- the adhesion of (1) was evaluated based on the presence or absence of peeling under high temperature and high humidity conditions. Specifically, the information recording medium after the initialization process is left in a high-temperature and high-humidity tank at a temperature of 90 ° C and 80RH% for 100 hours, and then the recording layer 4 and the dielectric layers 2 and 6 in contact therewith are recorded. Is peeling with at least one of the interfaces! /? I observed it.
- the signal evaluation of the information recording medium includes a spindle motor that rotates the information recording medium, an optical head that includes a semiconductor laser that emits laser light, and an objective lens that focuses the laser light on the recording layer 4 of the information recording medium.
- An information recording system with a general configuration including Specifically, using a semiconductor laser with a wavelength of 660 nm and an objective lens with a numerical aperture of 0.6, recording equivalent to 4.7 GB capacity was performed. At this time, the linear velocity for rotating the information recording medium was set to 8.2 mZ seconds. In addition, a time interval analyzer was used to measure the jitter value when obtaining the average jitter value described later.
- peak power (PP) and bias power (Pb) were set according to the following procedure in order to determine recording / reproduction conditions when measuring the number of repetitions.
- laser light can be converted into high power level peak power (mW) and low power level bias power. Irradiate the information recording medium with power modulation between 1 and (mW), and apply random signals with a mark length of 0.42 m (3T) to l.96 m (14T) to the same recording layer 4 Recorded 10 times on the group surface.
- a jitter value between the front ends (jitter at the front end portion of the recording mark) and a jitter value between the rear ends (jitter at the rear end portion of the recording mark) were measured, and an average jitter value was obtained as an average value of these values.
- the average jitter value is measured for each recording condition with the bias power fixed at a constant value and the peak power is varied, and the peak power is gradually increased to reach an average jitter value of 13% for random signals.
- the average jitter value was measured for each recording condition with the peak power fixed at Ppl and the noise power varied, and when the average jitter value of the random signal was 13% or less.
- the average of the upper and lower bias power values was set to Pb.
- this bias power is fixed at Pb, the average jitter value is measured for each recording condition with various changes in peak power, and the peak power is gradually increased until the average jitter value of the random signal reaches 13%.
- the power of 1.3 times the peak power was set to Pp.
- an average jitter value of 8 to 9% was obtained, for example, in 10-time repeated recording.
- the number of repetitions is determined based on the average jitter value in this embodiment.
- the laser beam is modulated with Pp and Pb, and the information recording medium is irradiated as described above, and a random signal with a mark length of 0.42 m (3T) to l.96 m (14T) is generated.
- the average jitter value was measured after repeating continuous recording a predetermined number of times on the same group surface (by group recording).
- the average jitter value was set to “willow at repetition times 1, 2, 3, 5, 10, 100, 200, 500 times”, and 1000 times or more were measured every 1000 times and evaluated up to 10,000 times.
- the repeated rewrite performance was evaluated by the number of repetitions when the average jitter value reached 13%.
- the number of repetitions is preferably 1000 or more. 10,000 or more If so, it is more desirable.
- Table 3 shows the evaluation results of (1) adhesion, (2) recording sensitivity, and (3) rewriting performance in the information recording media of Examples 1 to 11 and Comparative Examples 1 to 5.
- the atomic% of the material used for the dielectric layer is also shown.
- the presence or absence of peeling after the high-temperature and high-humidity test is shown as an evaluation result of adhesion.
- the recording sensitivity showed the set peak power, and it was evaluated as good if it was 14 mW or less.
- the rewrite performance was evaluated as X when the number of repetitions was less than 1000, ⁇ when the number of repetitions was 1000 or more and less than 10,000, and ⁇ when it was 10,000 or more.
- Example 1 an oxide group consisting of Ta 2 O and Y 2 O is added to an oxide group consisting of SnO and Ga 2
- the proportion of the group is preferably 30 mol% or more.
- the group ratio was preferably at least 5 mol% in consideration of the recording sensitivity.
- the information recording medium of this example is the information recording medium shown in FIG. 2 described in Embodiment 2, and the first dielectric layer 102 is formed using (ZnS) (SiO 2) (mol%), First interface
- the layer 103 was formed using ZrO 2 —SiO 2 —Cr 2 O with a thickness of 2 to 5 nm. Other configurations
- Example 12 Was prepared in the same manner as the information recording medium of Example 1.
- the second dielectric layer 6 disposed on and in contact with the recording layer 4 was formed using the sputtering target of the material used in Example 1.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12, except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 2.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 5.
- the second dielectric layer 6 was produced in the same manner as the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 6.
- the second dielectric layer 6 was produced in the same manner as the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 7.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12, except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 8.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12, except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 9.
- the second dielectric layer 6 is formed using the sputtering target of the material used in Example 10.
- the information recording medium of Example 12 was manufactured in the same manner as in Example 12 except that it was manufactured.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12, except that the second dielectric layer 6 was formed using the sputtering target of the material used in Example 11.
- the second dielectric layer 6 was produced in the same manner as the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Comparative Example 2.
- the second dielectric layer 6 was produced in the same manner as the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Comparative Example 3.
- the second dielectric layer 6 was produced in the same manner as the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Comparative Example 4.
- the second dielectric layer 6 was produced in the same manner as in the information recording medium of Example 12 except that the second dielectric layer 6 was formed using the sputtering target of the material used in Comparative Example 5.
- Table 4 shows (1) adhesion, (2) recording sensitivity, and (3) rewriting performance in the information recording media of Examples 12 to 20 and Comparative Examples 6 to 9.
- the notation criteria here are those shown in (Table 3). It is the same.
- the first dielectric layer 102 and the interface layer 103 are provided between the substrate 1 and the recording layer 4, and only the second dielectric layer 6 is used in the present invention.
- the materials were applied, almost the same tendency as in (Table 3) was observed. That is, SnO, GaO and mixtures thereof, or YO alone
- Good recording sensitivity was obtained by mixing at least one acid in the group within the range specified in the present invention.
- the proportion of the group is preferably 30 mol% or more.
- the proportion of Ta O and Y O is recorded.
- the above-described oxide-based material layer is used as the dielectric layer formed in contact with the recording layer as in the information recording media of Examples 1 to 20, the number of layers is reduced. The above-mentioned purpose is achieved and good rewriting performance is obtained.
- the present invention is not limited to these examples.
- at least one of the layers formed in contact with the recording layer may be formed of the above-described oxide-based material layer.
- Example 21 an information recording medium for recording information by electrical means as shown in FIG. 3 was produced. This is so-called memory.
- the information recording medium of the present example was manufactured as follows. First, a Si substrate 201 having a length of 5 mm, a width of 5 mm, and a thickness of 1 mm was prepared by nitriding the surface. On this substrate 201, an Au lower electrode 202 was formed in a region of 1. Omm X l. Omm with a thickness of 0.1 m. On the lower electrode 202, a material of Ge Sb Te (which is expressed as Ge Sb Te as a compound)
- phase change portion 205 having a thickness of 0.1 ⁇ m in a circular region having a diameter of 0.2 mm, and (SnO) (Ga O) (YO) (
- the heat insulating portion 206 functioning as the heat insulating portion. Called. )
- the region of 0.6 mm X O. 6 mm (excluding the phase change portion 205) so as to have the same thickness as the phase change portion 205.
- an upper electrode 204 of Au was formed in a region of 0.6 mm X O. 6 mm with a thickness of 0.1 ⁇ m.
- the lower electrode 202, the phase change part 205, the heat insulating part 206, and the upper electrode 204 were all formed by sputtering.
- phase change unit 205 In the process of depositing the phase change unit 205, a sputtering target (diameter 100mm, thickness 6mm) with Ge Sb-Te material force is attached to the deposition system, and Ar gas is introduced at a power of 100W. DC sputtering was performed. The pressure during sputtering was about 0.13 Pa. In the process of forming the heat insulating portion 206, the composition of (SnO) (Ga 2 O 3) (Y 2 O 3) (mol%) has
- a sputtering target (100 mm in diameter and 6 mm in thickness) with sufficient material strength was attached to the film deposition system, and high-frequency sputtering was performed under a pressure of about 0.13 Pa. The power was 400W. Ar gas was introduced during sputtering. Sputtering in these steps was performed by covering the region other than the surface to be deposited with a mask jig so that the phase change portion 205 and the heat insulating portion 206 were not stacked on each other. Note that the order of formation of the phase change portion 205 and the heat insulating portion 206 is not limited, and either may be performed first.
- the recording unit 203 is configured by the phase change unit 205 and the heat insulating unit 206.
- the phase change portion 205 corresponds to the recording layer referred to in the present invention
- the heat insulation portion 206 corresponds to the material layer referred to in the present invention.
- the lower electrode 202 and the upper electrode 204 can be formed by a sputtering method generally employed in the field of electrode formation technology, a detailed description of these film formation steps is omitted. To do.
- the sectional view of the information recording medium shown in FIG. 4 is a section obtained by cutting the information recording medium shown in FIG. 3 in the thickness direction along the line II.
- two application units 212 are bonded to the lower electrode 202 and the upper electrode 204 with Au lead wires, respectively, whereby electrical writing is performed via the application unit 212.
- the Z reading device 214 was connected to an information recording medium (memory).
- a noise generating unit 208 is connected via a switch 210 between the applying units 212 connected to the lower electrode 202 and the upper electrode 204, respectively.
- the resistance measuring device 209 is connected via the switch 211.
- the resistance measuring device 209 was connected to the determination unit 213 that determines the level of the resistance value measured by the resistance measuring device 209.
- the pulse generator 208 causes a current pulse to flow between the upper electrode 204 and the lower electrode 202 via the applying unit 212, and the resistance value between the lower electrode 202 and the upper electrode 204 is measured by the resistance measuring device 209.
- the judgment unit 213 judged whether the value was high or low. In general, since the resistance value is changed by the phase change of the phase change unit 205, the state of the phase of the phase change unit 205 can be known based on the determination result.
- the melting point of the phase change portion 205 was 630 ° C.
- the crystallization temperature was 170 ° C.
- the crystallization time was 130 ns.
- the resistance value between the lower electrode 202 and the upper electrode 204 was 1000 ⁇ when the phase change portion 205 was in the amorphous phase state, and 20 ⁇ when the phase change portion was in the crystalline phase state.
- a current pulse of 20 mA, 150 ns is applied between the lower electrode 202 and the upper electrode 204.
- the resistance value during the period decreased, and the phase change portion 205 also changed the amorphous phase state force to the crystalline phase state.
- phase change portion 205 when the phase change portion 205 is in a crystalline phase state (that is, a low resistance state), a current pulse of 200 mA, 100 ns is applied between the lower electrode 202 and the upper electrode 204. During this period, the resistance value increased, and the phase change part 205 transitioned from the crystalline phase to the amorphous phase.
- phase change can be caused to occur in the phase change unit 205 and the function of recording information can be provided by adding.
- this phenomenon is considered to have the same effect on the oxide-based material layer used in Examples 1 to 20.
- phase change part 205 is amorphous. When transitioning to a quasi-phase state, Ge Sb Te in the phase change part 205 is melted and melted.
- phase change portion 205 can occur with a smaller current by providing the heat insulation portion 206 around the phase change portion 205.
- the heat insulating portion 206 exists around the phase change portion 205, the heat insulating portion 206 becomes a barrier, so that the phase change portion 205 is substantially electrically and thermally separated in the plane of the recording portion 203.
- the information recording medium is provided with a plurality of phase change units 205 separated from each other by the heat insulating unit 206 to increase the memory capacity of the information recording medium, and to provide an access function and a switching function. It becomes possible to improve.
- a plurality of information recording media themselves can be connected.
- both the information recording medium for recording by optical means and the information recording medium for recording by electric means are provided in the recording layer.
- the oxide-based material layer defined in the present invention to the dielectric layer, it is possible to realize a powerful structure that has not been realized so far, and to obtain performance superior to conventional information recording media. .
- the information recording medium and the manufacturing method thereof according to the present invention are high-density information recording media such as DVD-RAM, DVD +/- RW, BD (Blue-ray Disk) recording medium, BD-R, etc. It can be applied to applications such as write-once information recording media, magneto-optical recording media, and memories using electrical energy and optical energy.
- high-density information recording media such as DVD-RAM, DVD +/- RW, BD (Blue-ray Disk) recording medium, BD-R, etc. It can be applied to applications such as write-once information recording media, magneto-optical recording media, and memories using electrical energy and optical energy.
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- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
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- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
Claims
Priority Applications (3)
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JP2007512498A JP4468984B2 (ja) | 2005-04-01 | 2006-03-24 | 情報記録媒体とその製造方法 |
US11/887,588 US7897231B2 (en) | 2005-04-01 | 2006-03-24 | Optical information recording medium and method for manufacturing the same |
CN2006800107977A CN101151668B (zh) | 2005-04-01 | 2006-03-24 | 信息存储介质及其制造方法 |
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JP2008257134A (ja) * | 2007-04-09 | 2008-10-23 | Sumitomo Metal Mining Co Ltd | 耐熱遮光フィルムとその製造方法、及びそれを用いた絞り又は光量調整装置 |
CN101888933B (zh) * | 2007-12-04 | 2013-05-29 | 松下电器产业株式会社 | 信息记录介质及其制造法和记录再生装置 |
WO2016129237A1 (ja) * | 2015-02-10 | 2016-08-18 | パナソニックIpマネジメント株式会社 | 情報記録媒体、並びに情報記録媒体の製造方法 |
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JP7209228B2 (ja) * | 2018-08-09 | 2023-01-20 | パナソニックIpマネジメント株式会社 | 情報記録媒体およびその製造方法 |
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CN101888933B (zh) * | 2007-12-04 | 2013-05-29 | 松下电器产业株式会社 | 信息记录介质及其制造法和记录再生装置 |
WO2016129237A1 (ja) * | 2015-02-10 | 2016-08-18 | パナソニックIpマネジメント株式会社 | 情報記録媒体、並びに情報記録媒体の製造方法 |
JPWO2016129237A1 (ja) * | 2015-02-10 | 2017-11-24 | パナソニックIpマネジメント株式会社 | 情報記録媒体、並びに情報記録媒体の製造方法 |
US10438627B2 (en) | 2015-02-10 | 2019-10-08 | Panasonic Intellectual Property Management Co., Ltd. | Information recording medium and method for manufacturing information recording medium |
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JPWO2006109534A1 (ja) | 2008-10-30 |
CN101151668A (zh) | 2008-03-26 |
US7897231B2 (en) | 2011-03-01 |
JP4468984B2 (ja) | 2010-05-26 |
US20090269539A1 (en) | 2009-10-29 |
CN101151668B (zh) | 2010-05-19 |
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