JP2008210509A - 情報記録媒体とその製造方法 - Google Patents
情報記録媒体とその製造方法 Download PDFInfo
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- JP2008210509A JP2008210509A JP2008085703A JP2008085703A JP2008210509A JP 2008210509 A JP2008210509 A JP 2008210509A JP 2008085703 A JP2008085703 A JP 2008085703A JP 2008085703 A JP2008085703 A JP 2008085703A JP 2008210509 A JP2008210509 A JP 2008210509A
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
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Abstract
【解決手段】基板201の表面に、下部電極202、記録部203および上部電極204がこの順に形成されたメモリ207であって、記録部203が、円柱状の記録層205および記録層205を取り囲む誘電体層206を含む構成を有する。
【選択図】図7
Description
ZrBZnCSDO100-B-C-D(原子%)...(1)
(式中、B、CおよびDはそれぞれ、8≦B≦33、3≦C≦30、C≦D≦2C<45の範囲内にあり、且つ40≦B+C+D≦80である)
で表される材料から実質的に成るZr−Zn−S−O系材料層を、構成要素として含むものである。ここで、「原子%」とは、式(1)が、Zr、Zn、SおよびO原子を合わせた数を基準(100%)として表された組成式であることを示している。以下の式においても「原子%」の表示は、同様の趣旨で使用されている。
(ZrO2)X(Zn−S)100-X(mol%)...(11)
(式中、Xは50≦X≦80である)
で表される材料から実質的に成る層であってよい。式(11)は、Zr−Zn−S−O系材料層がZrO2とZn−Sとから成る場合に、2つの成分の好ましい割合を表している。ここで、「mol%」とは、式(11)が、各化合物(Zn−Sも1つの化合物とみなす)の総数を基準(100%)として表わされた組成式であることを示している。以下の式においても「mol%」の表示は、同様の趣旨で使用されている。
ZrESiFZnGSHO100-E-F-G-H(原子%)...(2)
(式中、E、F、GおよびHはそれぞれ、1≦E≦30、0<F≦23、2≦G≦30、G≦H≦2G<45の範囲内にあり、且つ40≦E+F+G+H≦80である)
で表される材料から実質的に成る層であってよい。
(ZrO2)Y(SiO2)Z(Zn−S)100−Y−Z(mol%)...(21)
(式中、YおよびZはそれぞれ、20≦Y≦70、10≦Z≦50の範囲内にあり、且つ50≦Y+Z≦80である)
で表される材料から実質的になる層であってよい。式(21)は、Siを含むZr−Zn−S−O系材料層が、ZrO2、SiO2、およびZn−Sの混合物から成る場合に、3つの成分の好ましい割合を示している。式(21)で表される材料から実質的に成る層も、記録層と隣接する誘電体層のうち、いずれか一方の誘電体層として存在することが好ましく、両方の誘電体層として存在することがより好ましい。あるいは、式(21)で表される材料から実質的に成る層は、情報記録媒体において、記録層と誘電体層との間に位置する界面層としてもよい。
(ZrSiO4)A(Zn−S)100−A(mol%)...(22)
(式中、Aは、33≦A≦67の範囲内にある)
で表される。ZrSiO4は、ZrO2とSiO2とを略等しい割合で含む、複合酸化物である。ZrSiO4は、融点が高く、化学量論組成であるため構造が安定している。式(22)で表される材料から実質的に成る層も、記録層と隣接する誘電体層のうち、いずれか一方の誘電体層として存在することが好ましく、両方の誘電体層として存在することがより好ましい。式(22)において、33≦A≦67とすることにより、ZrSiO4およびZn−Sが適切な割合で層中に存在する。したがって、式(22)で表される材料から実質的に成る誘電体層は、記録層と良好に密着するとともに、情報記録媒体が、良好な記録感度および繰り返し書き換え性能を有することを確保する。ZrO2とSiO2が複合酸化物であるZrSiO4を形成している場合、ZrSiO4の薄膜は非晶質である。前述のように、ZnSの薄膜は結晶である。したがって、これらの構造の異なる2つの材料を混合して、構造を複雑化すると、熱の伝導を低下させることができる。それにより、記録層を急冷する作用が大きくなるから、情報記録媒体の記録感度を高くすることができる。したがって、式(22)で表される材料から実質的に成る誘電体層は、記録層との密着性に優れるとともに、情報記録媒体がより良好な記録感度を有し、また良好な繰り返し書き換え性能を有することを確保する。あるいは、式(22)で表される材料から実質的に成る層は、情報記録媒体において、記録層と誘電体層との間に位置する界面層としてもよい。
ZrbZncSdO100-b-c-d(原子%)...(10)
(式中、b、cおよびdはそれぞれ、11≦b≦30、5≦c≦27、c≦d≦2c<40の範囲内にあり、且つ40≦b+c+d≦80である)
で表される材料から実質的に成るものを使用できる。式(10)は、後述する式(110)で表される材料を元素組成で表した式に相当する。したがって、このターゲットによれば、上記式(10)で表される材料から実質的に成る層を形成することができる。
(ZrO2)x(Zn−S)100-x(mol%)...(110)
(式中、xは50≦x≦80である)
で表される材料から実質的に成るものを使用してよい。これは、スパッタリングターゲットの組成を、ZrO2とZn−Sの割合で表した式に相当する。このようにスパッタリングターゲットを特定しているのは、通常、Zr、Zn、SおよびOを含む材料から成るスパッタリングターゲットは、この2つの成分の組成が表示されて販売されていることによる。また、発明者は、市販のスパッタリングターゲットのX線マイクロアナライザーで分析して得た元素組成が、表示されている組成から算出される元素組成と略等しくなることを(即ち、組成表示(公称組成)が適正であること)を確認している。したがって、このスパッタリングターゲットによれば、式(11)で表される材料から実質的に成る層が形成される。
ZreSifZngShO100-e-f-g-h(原子%)...(20)
(式中、e、f、gおよびhはそれぞれ、3≦e≦27、1<f≦20、5≦g≦27、g≦h≦2g<40の範囲内にあり、且つ40≦e+f+g+h≦80である)
で表される材料から実質的に成るものを用いてよい。このスパッタリングターゲットを使用すれば、式(21)または式(2)で表される材料から実質的に成る層が形成される。
(ZrO2)y(SiO2)z(Zn−S)100-y-z(mol%)...(210)
(式中、yおよびzはそれぞれ、20≦y≦70、および10≦z≦50の範囲内にあり、且つ50≦y+z≦80である)
で表される材料から実質的に成るものを使用してよい。このようにスパッタリングターゲットを特定しているのは、Zr、Zn、Si、SおよびOを含む材料から成るスパッタリングターゲットが、通常、ZrO2、SiO2、およびZn−Sの組成が表示されて、販売されていることによる。発明者らは、式(210)のように組成が表示されているターゲットについても、組成表示(即ち、公称組成)が適正であることを確認している。したがって、このスパッタリングターゲットによれば、式(21)で表される材料から実質的に成る層が形成される。
(ZrSiO4)a(Zn−S)100−a(mol%)...(220)
(式中、aは、33≦a≦67の範囲内にある)
で表される材料から実質的に成るものである。このスパッタリングターゲットによれば、式(22)で示される材料から実質的に成る層が形成される。
本発明の実施の形態1として、レーザ光を用いて情報の記録および再生を実施する、光情報記録媒体の一例を説明する。図1に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態2として、レーザ光を用いて情報の記録および再生を実施する、光情報記録媒体の別の例を説明する。図2に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態3として、レーザ光を用いて情報の記録および再生を実施する、光情報記録媒体のさらに別の例を説明する。図3に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態4として、レーザ光を情報の記録および再生を実施する、光情報記録媒体のさらに別の例を説明する。図4に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態5として、レーザ光を用いて記録および再生を実施する、光情報記録媒体のさらに別の例を説明する。図5に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態6として、レーザ光を用いて情報の記録および再生を実施する情報記録媒体のさらに別の例を説明する。図6に、その光情報記録媒体の一部断面を示す。
本発明の実施の形態7として、電気的エネルギーを印加して情報の記録および再生を実施する情報記録媒体の一例を示す。図7に、その情報記録媒体の一部断面を示す。
実施例1では、本発明を完成するに至るまでの予備試験として、実施の形態1にて図1を参照しながら上述した情報記録媒体25と同様の構造を有し、第1の誘電体層および第2の誘電体層が互いに同じ組成を有する材料から成る情報記録媒体を、これら誘電体層の材料を表1に示すように種々変化させて作製した。
実施例2では、高い密着性および高い繰り返し書き換え性能を同時に達成することを目的として、ZrO2とZnSとを混合したZr−Zn−S−O系材料層を誘電体層に用いた。
実施例3では、高記録感度の情報記録媒体を実現することを目的として、ZrO2−ZnS系の材料にSiO2を混合したものを誘電体層の材料に用いた情報記録媒体を作製した。本実施例においても、実施例1と同様に、第1の誘電体層と第2の誘電体層が互いに同じ組成を有する材料から成る情報記録媒体25を、これら誘電体層の材料を表3に示すように種々変化させて作製した。実施例3では、(ZrO2)Y(SiO2)Z(ZnS)100−Y−Z(mol%)(式中、(Sの原子数)/(Znの原子数)はほぼ1である)と表記される系の材料について誘電体層に用いるのに適した組成範囲を調べるために、第1および第2の誘電体層の材料を、表3に示すようにZrO2およびSiO2の含有率YおよびZ(モル%)を種々変化させて情報記録媒体を作製した。ここで、Y+Z=50となる4種類の組成、および、Y+Z=80となる7種類の組成について調べた。
実施例4では、高い密着性および高い繰り返し書き換え性能を同時に達成することを目的として、ZrSiO4とZnSとを混合したZr−Zn−S−O系材料層を誘電体層に用いた。本実施例においても、実施例1と同様に第1の誘電体層2および第2の誘電体層6が互いに同じ組成を有する材料から成る情報記録媒体25(図1)を、これら誘電体層の材料を表4に示すように種々変化させて作製した。実施例4では、(ZrSiO4)A(ZnS)100−A(mol%)(式中、(Sの原子数)/(Znの原子数)はほぼ1である)と表記される系の材料について誘電体層に用いるのに適した組成範囲を調べるために、第1および第2の誘電体層の材料を、表4に示すようにZrSiO4の含有率A(モル%)を種々変化させて情報記録媒体を作製した。
実施例5では、Zr−Zn−S−O系材料層においてZn−Sの形態で存在するZnとSとの好ましい組成比の範囲を調べた。本実施例においても、実施例1と同様に、第1の誘電体層および第2の誘電体層が互いに同じ組成を有する材料から成る情報記録媒体25を、これら誘電体層の材料を表5に示すように種々変化させて作製した。実施例5では、(ZrSiO4)A(Zn−S)100−A(mol%)と表記される系の材料について誘電体層に用いるのに適した組成範囲を調べるために、第1および第2の誘電体層の材料を、表5に示すように、33≦A≦67の範囲において、(Sの原子数)/(Znの原子数)を種々変化させて情報記録媒体を作製した。ここで、A=33、43、54および67の各条件につき、(Sの原子数)/(Znの原子数)=0.5、1.5、2、および2.5となる16種類の組成について調べた。
実施例6では、実施の形態2にて図2を参照しながら上述した情報記録媒体26と同様の構造を有し、第1の誘電体層および第2の誘電体層が互いに異なる組成を有する材料から成り、第2の誘電体層と記録層との間に第2の界面層を備える情報記録媒体を作製した。
実施例7では、実施の形態3にて図3を参照しながら上述した情報記録媒体27と同様の構造を有し、第1の誘電体層および第2の誘電体層が異なる組成を有する材料から成り、第1の誘電体層と記録層との間に第1の界面層を備える情報記録媒体を作製した。
実施例8では、実施の形態4にて図4を参照しながら上述した情報記録媒体28と同様の構造を有する情報記録媒体を作製した。
実施例9では、実施の形態5にて図5を参照しながら上述した情報記録媒体29と同様の構造を有する情報記録媒体を作製した。
実施例10では、実施の形態6にて図6を参照しながら上述した情報記録媒体30と同様の構造を有する情報記録媒体を作製した。本実施例の情報記録媒体30においては、上述までの実施例1〜9の情報記録媒体における誘電体層とは異なり、第1の界面層3および第2の界面層5にZr−Zn−S−O系材料層を用いたものである。
実施例11では、実施の形態4にて図4を参照しながら説明した情報記録媒体28と同様の構造を有する情報記録媒体を、記録層4の材料を種々変化させて作製した。
以上の実施例1〜11では、光学的手段によって情報を記録する情報記録媒体を作製したが、実施例12では、図7に示すような、電気的手段によって情報を記録する情報記録媒体207を作製した。本実施例の情報記録媒体207はいわゆるメモリである。
2,102 第1の誘電体層
3,103 第1の界面層
4 記録層
5,105 第2の界面層
6,106 第2の誘電体層
7 光吸収補正層
8 反射層
9 接着層
10,110 ダミー基板
12 レーザ光
13 第1の記録層
14 第1の反射層
15 第3の誘電体層
16 中間層
17 第4の誘電体層
18 第2の記録層
19 第5の誘電体層
20 第2の反射層
21 第1情報層
22 第2情報層
23 グルーブ面
24 ランド面
25、26,27,28,29,30,31,207 情報記録媒体
202 下部電極
203 記録部
204 上部電極
205 相変化部(記録層)
206 断熱部(誘電体層)
208 パルス発生部
209 抵抗測定器
210,211 スイッチ
212 印加部
213 判定部
214 電気的書き込み/読み出し装置
Claims (12)
- 基板および記録層を含み、前記記録層が電気的エネルギーの印加によって、結晶相と非晶質相との間で相変態を生じる情報記録媒体であって、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接しており、前記Zr−Zn−S−O系材料層が、式(1)
ZrBZnCSDO100-B-C-D(原子%)...(1)
(式中、B、CおよびDはそれぞれ、8≦B≦33、3≦C≦30、C≦D≦2C<45の範囲内にあり、且つ40≦B+C+D≦80である)
で表される材料から実質的に成る、情報記録媒体。 - 基板および記録層を含み、前記記録層が電気的エネルギーの印加によって、結晶相と非晶質相との間で相変態を生じる情報記録媒体であって、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接しており、前記Zr−Zn−S−O系材料層が、式(2):
ZrESiFZnGSHO100-E-F-G-H(原子%)...(2)
(式中、E、F、GおよびHはそれぞれ、1≦E≦30、0<F≦23、2≦G≦30、G≦H≦2G<45の範囲内にあり、且つ40≦E+F+G+H≦80である)
で表される材料から実質的に成る、請求項1に記載の情報記録媒体。 - 前記Zr−Zn−S−O系材料層が、式(11):
(ZrO2)X(Zn−S)100-X(mol%)...(11)
(式中、Xは50≦X≦80である)
で表される材料から実質的に成る、請求項1に記載の情報記録媒体。 - 前記Zr−Zn−S−O系材料層が、式(21):
(ZrO2)Y(SiO2)Z(Zn−S)100−Y−Z(mol%)...(21)
(式中、YおよびZはそれぞれ、20≦Y≦70、10≦Z≦50の範囲内にあり、且つ50≦Y+Z≦80である)
で表される材料から実質的に成る、請求項2に記載の情報記録媒体。 - 前記式(21)で表される材料が、ZrO2とSiO2を略等しい割合で含み、式(22):
(ZrSiO4)A(Zn−S)100−A(mol%)...(22)
(式中、Aは、33≦A≦67の範囲内にある)
で表される、請求項4に記載の情報記録媒体。 - 相変態が可逆的に生じる請求項1〜5のいずれか1項に記載の情報記録媒体。
- 記録層が、Ge−Sb−Te、Ge−Sn−Sb−Te、Ge−Bi−Te、Ge−Sn−Bi−Te、Ge−Sb−Bi−Te、Ge−Sn−Sb−Bi−Te、Ag−In−Sb−TeおよびSb−Teから選択される、いずれか1つの材料を含む請求項6に記載の情報記録媒体。
- 基板および記録層を含み、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接している、情報記録媒体の製造方法であって、前記Zr−Zn−S−O系材料層をスパッタリング法で形成する工程を含み、この工程において、式(10):
ZrbZncSdO100-b-c-d(原子%)...(10)
(式中、b、cおよびdはそれぞれ、11≦b≦30、5≦c≦27、c≦d≦2c<40の範囲内にあり、且つ40≦b+c+d≦80である)
で表される材料から実質的に成るスパッタリングターゲットを用いる、情報記録媒体の製造方法。 - 基板および記録層を含み、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接している、情報記録媒体の製造方法であって、前記Zr−Zn−S−O系材料層をスパッタリング法で形成する工程を含み、この工程において、式(20):
ZreSifZngShO100-e-f-g-h(原子%)...(20)
(式中、e、f、gおよびhはそれぞれ、3≦e≦27、1<f≦20、5≦g≦27、g≦h≦2g<40の範囲内にあり、且つ40≦e+f+g+h≦80である)
で表される材料から実質的に成るスパッタリングターゲットを用いる、情報記録媒体の製造方法。 - 基板および記録層を含み、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接している、情報記録媒体の製造方法であって、前記Zr−Zn−S−O系材料層をスパッタリング法で形成する工程を含み、この工程において、式(110):
(ZrO2)x(Zn−S)100-x(mol%)...(110)
(式中、xは50≦x≦80である)
で表される材料から実質的に成るスパッタリングターゲットを用いる、情報記録媒体の製造方法。 - 基板および記録層を含み、Zr、Zn、SおよびOを含むZr−Zn−S−O系材料層をさらに含み、前記Zr−Zn−S−O系材料層が、前記記録層の側面と接している、情報記録媒体の製造方法であって、前記Zr−Zn−S−O系材料層をスパッタリング法で形成する工程を含み、この工程において、式(210):
(ZrO2)y(SiO2)z(Zn−S)100-y-z(mol%)...(210)
(式中、yおよびzはそれぞれ、20≦y≦70、および10≦z≦50の範囲内にあり、且つ50≦y+z≦80である)
で表される材料から実質的に成るスパッタリングターゲットを用いる、情報記録媒体の製造方法。 - 前記式(210)で表される材料が、ZrO2とSiO2を略等しい割合で含み、式(220):
(ZrSiO4)a(Zn−S)100−a(mol%)...(220)
(式中、aは、33≦a≦67の範囲内にある)
で表される材料である、請求項11に記載の情報記録媒体の製造方法。
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