JP2006099905A - 光記録媒体 - Google Patents

光記録媒体 Download PDF

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JP2006099905A
JP2006099905A JP2004287391A JP2004287391A JP2006099905A JP 2006099905 A JP2006099905 A JP 2006099905A JP 2004287391 A JP2004287391 A JP 2004287391A JP 2004287391 A JP2004287391 A JP 2004287391A JP 2006099905 A JP2006099905 A JP 2006099905A
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film
dielectric film
transparent dielectric
recording
optical recording
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Sumio Ashida
純生 芦田
Tsukasa Nakai
司 中居
Keiichiro Yusu
圭一郎 柚須
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Toshiba Corp
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Toshiba Corp
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Priority to JP2004287391A priority Critical patent/JP2006099905A/ja
Priority to US11/179,597 priority patent/US20060068151A1/en
Publication of JP2006099905A publication Critical patent/JP2006099905A/ja
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Abstract

【課題】高線速での記録時や低パワーのレーザーでの記録時、または片面２層媒体のように第１情報層を通して第２情報層に記録する場合に、良好な記録マークを形成できる光記録媒体を提供する。
【解決手段】記録膜の両側または片側に２層以上の誘電体膜の積層膜を有し、前記各々の誘電体膜の材料は無機酸化物、無機窒化物、無機硫化物および無機フッ化物からなる群より選択される１種の化合物または２種以上の化合物の混合物を主成分とし、かつ互いに積層された誘電体膜材料ＡおよびＢの屈折率をそれぞれｎＡおよびｎＢとしたとき、（ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≦０．０５の関係を満たすことを特徴とする光記録媒体。
【選択図】 図１

Description

本発明は、光ビームを照射することで状態を変化させ、情報を記録する光記録媒体に関する。
公知の記録可能な光記録媒体の構造を簡単に説明する。
ＣＤ−Ｒなどは、基板上に記録膜および反射膜を積層した構造を有する。ＤＶＤ−ＲＷなどは、基板上に、透明誘電体膜、記録膜、透明誘電体膜および反射膜を積層した構造を有する。
ＨＤ ＤＶＤでは、基板上に、高屈折率透明誘電体膜、低屈折率透明誘電体膜、高屈折率透明誘電体膜、記録膜、透明誘電体膜および反射膜を積層した構造のものが知られている（非特許文献１参照）。
ＤＶＤ−ＲＡＭでは、基板上に、透明誘電体膜、界面膜、記録膜、界面膜、透明誘電体膜、吸収率調整膜および反射膜を積層した構造を有するものが知られている（非特許文献２参照）。
これらの光記録媒体は、記録膜をはさむ膜材料の熱伝導率が高いため照射したレーザービームにより与えられた熱の拡散が激しく、条件によっては十分な感度が得られずに良好な記録マークを形成できなくなるという問題を有する。このことは、たとえば高線速で記録する場合や、出力パワーの低いレーザーを用いて記録する場合に特に問題になる。なお、大きな出力パワーが得られるにしても高価なレーザーを用いるのでは根本的な問題の解決にはならない。
また、片面２層媒体（たとえば非特許文献３参照）では、光入射側の第１情報層を通して第２情報層に光を照射して記録する場合、第１情報層はある程度の光吸収性を有するため第２情報層に達するまでに光強度のかなりの減衰が見込まれる。このような場合にも、記録膜をはさむ膜材料における熱の拡散によって十分な感度が得られずに良好な記録マークを形成できなくなることは重大な問題となる。
Ｏｈｋｕｂｏほか、第１４回相変化記録研究会シンポジウム予稿集、ｐ．９２，２００２ Ｋｉｔａｕｒａほか、第１１回相変化記録研究会シンポジウム予稿集、ｐ．８９，１９９９ Ｔｓｕｋａｍｏｔｏほか、第１４回相変化記録研究会シンポジウム予稿集、ｐ．２０，２００２
本発明の目的は、高線速での記録時や低パワーのレーザーでの記録時、または片面２層媒体のように第１情報層を通して第２情報層に記録する場合に、良好な記録マークを形成できる光記録媒体を提供することにある。
本発明の一態様に係る光記録媒体は、記録膜の両側または片側に２層以上の誘電体膜の積層膜を有し、前記各々の誘電体膜の材料は無機酸化物、無機窒化物、無機硫化物および無機フッ化物からなる群より選択される１種の化合物または２種以上の化合物の混合物を主成分とし、かつ互いに積層された誘電体膜材料ＡおよびＢの屈折率をそれぞれｎＡおよびｎＢとしたとき、
（ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≦０．０５
の関係を満たすことを特徴とする。
本発明によれば、光記録媒体の光学特性を確保した上で、透明誘電体膜の熱伝導を低減でき、高速記録に適した、高感度の光記録媒体が提供できる。
熱伝導は物質の格子振動および電子運動の伝達によって説明される。しかし、これまでは異種材料間の界面熱伝導を正確に測定することは困難であった。光記録媒体に関しても、膜材料の界面の熱伝達が調べられた例はなかった。
そこで本発明者らは、レーザービームを１０-12秒オーダーの非常に短いパルスとし、膜面に照射することでナノ薄膜の熱伝導を調べた。その結果、１０〜１００ｎｍの薄膜どうしの積層膜では、薄膜自体の熱伝導率と、異種材料からなる２種の膜間の界面で発生する熱抵抗とが実質的に同程度であることを見出した。
本発明の実施形態に係る光記録媒体においては、光入射側から見て記録膜の両側または片側に形成される２層以上の誘電体膜の積層膜に含まれる各々の誘電体膜の材料は無機酸化物、無機窒化物、無機硫化物および無機フッ化物からなる群より選択される１種の化合物または２種以上の化合物の混合物を主成分とする。ここで、無機酸化物はＨｆ−Ｏ、Ｚｒ−Ｏ、Ｙ−Ｏ、Ｃｒ−Ｏ、Ｎｂ−Ｏ、Ｔａ−Ｏ、Ｉｎ−Ｏ、Ａｌ−Ｏ、Ｔｉ−Ｏ、Ｓｎ−Ｏ、Ｍｇ−Ｏ、Ｃｅ−Ｏ、Ｂｉ−Ｏ、Ｇａ−ＯおよびＳｉ−Ｏからなる群より選択され、無機窒化物はＳｉ−Ｎ、Ｇｅ−Ｎ、Ｓｎ−Ｎ、Ｂ−Ｎ、Ｃ−ＮおよびＡｌ−Ｎからなる群より選択され、無機硫化物はＺｎ−Ｓなどからなる群より選択され、無機フッ化物はＭｇ−ＦおよびＣａ−Ｆからなる群より選択される。より具体的には、無機酸化物はＨｆＯ2、Ａｌ2Ｏ3、ＴｉＯ2、ＩＴＯ、ＭｇＯ、ＣｅＯ2、Ｂｉ2Ｏ3およびＳｉＯ2などからなる群より選択され、無機窒化物はＳｉＮおよびＡｌＮなどからなる群より選択され、無機硫化物はＺｎＳなどからなる群より選択され、無機フッ化物はＭｇＦ2およびＣａＦ2などからなる群より選択される。なお、これらのうち１種の化合物または２種以上の化合物の混合物に、さらにＳｉＣなどの無機炭化物を混合してもよい。
特に、界面の熱抵抗は、積層する異種材料が（１）２族〜１６族元素の酸化物、（２）１３族〜１６族元素の窒化物、（３）１２族〜１６族元素の硫化物から選択され、（１）と（２）、（１）と（３）、または（２）と（３）の組み合わせである場合に特に大きいことが判明した。特に、適切に材料を選択することで、これまでに知られている誘電体の熱伝導率を下回る実効的な熱伝導率を得ることができる。したがって、記録膜の両側または片側にこれらの異種材料の積層膜を設けると、記録膜に吸収された熱の拡散が少ないので記録膜が高温に達する。すなわち、低いレーザーパワーでも記録が行われる。
一方、これらの異種材料の屈折率が著しく異なる場合には、界面において光の反射が起こる。しかし、実質的に同一の屈折率を持つ場合、界面での反射を無視でき、入射する光のパワーを最大限に利用することができる。光記録媒体の応用上、実質的に同一とみなせるのは、異種材料ＡおよびＢの屈折率をそれぞれｎＡおよびｎＢとしたとき、（ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≦０．０５の関係を満たす場合である。この場合、実質的に界面の反射を無視でき、感度を確保することができる。
本発明の実施形態に係る光記録媒体において、記録膜は相変化記録膜（ＧｅＳｂＴｅ、ＡｇＩｎＳｂＴｅ、ＡｇＩｎＳｂＴｅＶ、ＧｅＳｂＴｅＢｉ、ＧｅＳｂＴｅＳｎ、ＧｅＢｉＴｅなど）、または色素膜、またはＰｄＴｅＯｘ、ＰｄＯｘ、ＰｔＯｘ、Ｔｅ−Ｃ、Ｃｕ／Ｓｉ積層膜、ＡｌＳｉ膜などの無機膜のいずれであってもよい。すなわち、記録膜が光を吸収・発熱して記録が行われる場合には本発明を適用可能であることは明らかである。
本発明の実施形態に係る光記録媒体は、反射膜があってもなくてもよいが、十分な光学反射率を確保し、それによって良好な再生信号を得る上では、Ａｌ系、Ａｇ系などの金属からなる反射膜を備えていることが好ましい。さらに、記録膜と反射膜との間に、本発明の実施形態に係る積層誘電体膜を備えていることが最も好ましい。
次に、図１〜図８を参照して本発明の実施形態に係る光記録媒体の層構成の例を説明する。ただし、本発明の光記録媒体はこれらの例に限定されない。
図１の光記録媒体は、ポリカーボネート（ＰＣ）基板１上に、透明誘電体膜（Ｂ）１１、記録膜１２、透明誘電体膜（Ｂ）１３、透明誘電体膜（Ａ）１４、反射膜１５を積層したものである。すなわち、この媒体では、記録膜１２と反射膜１５との間に透明誘電体膜（Ｂ）１３と透明誘電体膜（Ａ）１４との積層膜が形成されている。
図２の光記録媒体は、ＰＣ基板１上に、透明誘電体膜（Ａ）２１、透明誘電体膜（Ｂ）２２、記録膜２３、透明誘電体膜（Ｂ）２４、反射膜２５を積層したものである。すなわち、この媒体では、記録膜２３の光入射側に透明誘電体膜（Ａ）２１と透明誘電体膜（Ｂ）２２との積層膜が形成されている。
図３の光記録媒体は、ＰＣ基板１上に、透明誘電体膜（Ａ）３１、透明誘電体膜（Ｂ）３２、記録膜３３、透明誘電体膜（Ｂ）３４、透明誘電体膜（Ａ）３５、反射膜３６を積層したものである。すなわち、この媒体では、記録膜３３の上下両側に光入射側に透明誘電体膜（Ａ）と透明誘電体膜（Ｂ）との積層膜が形成されている。
図４の光記録媒体は、図３の光記録媒体の層構成に加えて、記録膜３３の上下両面に界面膜３７ａ、３７ｂを形成したものである。界面膜には、相変化記録膜の結晶化を促進する作用を有する材料として、たとえばＧｅＮ、ＳｉＮ、ＳｉＣなどの材料が用いられる。
図５の光記録媒体は、ＰＣ基板１上に、透明誘電体膜（Ａ）４１、透明誘電体膜（Ｂ）４２、記録膜４３、透明誘電体膜（Ｂ）４４、透明誘電体膜（Ａ）４５、透明誘電体膜（Ｂ）４６、透明誘電体膜（Ａ）４７、反射膜４８を積層したものである。
図６の光記録媒体は、図５の光記録媒体の層構成に加えて、記録膜４３の上下両面に界面膜４９ａ、４９ｂを形成したものである。
図７の光記録媒体は片面２層媒体である。一方のＰＣ基板１上に、透明誘電体膜（Ｂ）５１、記録膜５２、透明誘電体膜（Ｂ）５３、透明誘電体膜（Ａ）５４、半透明反射膜５５を積層している。他方のＰＣ基板２上に、反射膜６１、透明誘電体膜（Ａ）６２、透明誘電体膜（Ｂ）６３、記録膜６４、透明誘電体膜（Ｂ）６５を積層している。これら２つのＰＣ基板の成膜面を対向させて、ＵＶ硬化樹脂を硬化させた中間分離層７０によって貼り合わせている。
図８の光記録媒体は、ＰＣ基板３上に、反射膜８１、透明誘電体膜（Ａ）８２、透明誘電体膜（Ｂ）８３、記録膜８４、透明誘電体膜（Ｂ）８５、カバーシート８６を積層したものである。この媒体では、高開口数（ＮＡ）の対物レンズを通してカバーシート８６側からレーザー光を入射する。
図１〜図８に示したような、透明誘電体膜（Ａ）と透明誘電体膜（Ｂ）との組み合わせに用いられる異種材料を選択する方法を説明する。ここでは、下記に示す無機酸化物、無機窒化物、無機硫化物、または無機フッ化物を用い、これらの混合物を調製して、他の化合物または混合物と屈折率を一致させるようにする。
酸化物の例：Ａｌ2Ｏ3（屈折率１．６７）、ＴｉＯ2（屈折率２．８）、ＩＴＯ（Ｉｎ2Ｏ3−ＳｎＯ2複合酸化物）（屈折率１．８）、ＭｇＯ（屈折率１．７）、ＣｅＯ2（屈折率２．４）、Ｂｉ2Ｏ3（屈折率２．５）、ＳｉＯ2（屈折率１．４８）
硫化物の例：ＺｎＳ（屈折率２．４）
窒化物の例：ＳｉＮ（屈折率２）、ＡｌＮ（屈折率２．２）
フッ化物の例：ＭｇＦ2（屈折率１．３８）、ＣａＦ2（屈折率１．４４）。
表１にこれらの化合物を含む屈折率（合成屈折率）＝２の透明誘電体を示す。表２にこれらの化合物を含む屈折率（合成屈折率）＝２．２の透明誘電体を示す。
表１の化合物１−１〜１−４のいずれか２つを選択して、図１〜図８に示した透明誘電体膜（Ａ）と透明誘電体膜（Ｂ）との組み合わせとして用いることができる。同様に、表２の化合物２−１〜２−４のいずれか２つを選択して、図１〜図８に示した透明誘電体膜（Ａ）と透明誘電体膜（Ｂ）との組み合わせとして用いることができる。
なお、これらの化合物は必ずしも化学量論組成である必要はない。本発明の規定する範囲を満たす屈折率が得られ、かつ使用する光源波長において実質的に透明であればよい。表１および表２において、例えばＳｉＯ2と記載した化合物は、分析の結果Ｓｉ：Ｏが必ずしも整数比の１：２である必要はなく、１：１．９〜１：２．１程度の範囲で変わってもよい。
また、これらの化合物はかならずしも酸化物のみ、窒化物のみ、硫化物のみ、フッ化物のみの純物質ないし混合物である必要はない。例えば表１の化合物１−３、表２の２−３のように酸化物とフッ化物、表２の化合物２−１のように硫化物と酸化物、のように異種化合物を混合したものであってもよい。この場合は主成分（５０ａｔ．％以上含有する化合物）となる化合物に注目し、例えばそれが酸化物であれば、窒化物・フッ化物・硫化物を主成分とする材料と組み合わせることが好ましい。
Figure 2006099905
Figure 2006099905
以上のように、記録膜の両側または片側に、屈折率が同じであるが異種材料からなる透明誘電体膜（Ａ）と透明誘電体膜（Ｂ）との積層膜を設けることにより、光学的には従来と同等の特性を確保しながら、熱伝導を低くすることができ、高感度の光記録媒体を提供できる。
以下のようにして、実施例、比較例１および比較例２の光記録媒体を作製した。
ランド・グルーブ記録時にトラックピッチ０．３４μｍとなるようにプリグルーブを作製した、厚さ０．６ｍｍのポリカーボネート基板上に、マグネトロンスパッタによって、第１誘電体膜、ＡｇＩｎＳｂＴｅからなる相変化記録膜、第２誘電体膜、ＡｇＮｄＣｕからなる反射膜を順次成膜した。記録膜の両側の第１誘電体膜および第２誘電体膜として下記の材料を用いた。これらの誘電体膜はコンポジットターゲットを用い、ＲＦマグネトロンスパッタリングにより成膜した。
実施例
透明誘電体膜ＡとしてＺｎＳ（８０ａｔ％）：ＳｉＯ2、屈折率≒２．２
透明誘電体膜ＢとしてＨｆＯ2（９５ａｔ％）：ＳｉＣ、屈折率≒２．２
を用いて、第１誘電体膜および第２誘電体膜を形成し、図３に示す構造を有する光記録媒体を作製した。この場合、（ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≒０である。
比較例１
透明誘電体膜としてＺｎＳ（８０ａｔ％）：ＳｉＯ2のみを用い、単層の第１誘電体膜および第２誘電体膜を形成して従来の光記録媒体を作製した。
比較例２
透明誘電体膜ＡとしてＺｎＳ（８０ａｔ％）：ＳｉＯ2、屈折率≒２．２
透明誘電体膜ＢとしてＣｅＯ2（７０ａｔ％）：Ａｌ2Ｏ3、屈折率≒１。９８
を用いて、第１誘電体膜および第２誘電体膜を形成し、図３に示す構造を有する光記録媒体を作製した。この場合、（ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≒０．０７＞０．０５である。
これらの光記録媒体を、評価装置としてＤＤＵ−１０００（パルステック（株））を用いて評価した。この評価装置は、光源として波長４０５ｎｍのレーザーダイオードおよびＮＡ＝０．６５の対物レンズを備えたピックアップを有する。光源としてのレーザーダイオードは、記録時のパルス照射により媒体面上で最大１５ｍＷが得られる。
高速記録が可能かどうかを調べるため、評価装置のスピンドル回転数を変化させ、線速１１．２ｍ／ｓまたは２２．４ｍ／ｓで記録実験を行った。記録は、単純なパルス列に変調したレーザービーム照射で行った。図９にライトストラテジーを示す。表３に、線速がそれぞれ１１．２ｍ／ｓまたは２２．４ｍ／ｓであるとき、図９に示した各パラメータの値を示す。記録後、読み出しレーザーパワーＰｒ＝０．５ｍＷで読み出し、ＣＮＲを測定した。
Figure 2006099905
図１０に、実施例および比較例１の光記録媒体について、線速２２．４ｍ／ｓで記録したときの、記録パワーとＣＮＲとの関係を示す。図１０から以下のことがわかる。
ＣＮＲが飽和するのに、比較例１の光記録媒体では５．５ｍＷの記録パワーが必要なのに対し、実施例の光記録媒体では３．５ｍＷで十分である。このように、従来の光記録媒体を速い線速で回転させながら記録した場合、十分なＣＮＲを得るには高い記録パワーレベルを必要とする。なお、線速が１１．２ｍ／ｓの条件では、比較例１の光記録媒体でも３．５ｍＷのパワーで５２ｄＢのＣＮＲが得られ、線速を下げれば感度を上げることができることがわかっている。両者の比較から、高速記録のために高線速での動作を必要とする場合、本実施例の光記録媒体の層構成が非常に有効であることが示された。
図１１に、実施例および比較例２の光記録媒体について、線速２２．４ｍ／ｓで記録したときの、記録パワーとＣＮＲとの関係を示す。図１１から以下のことがわかる。
図１０との比較から、比較例２の光記録媒体は、比較例１の光記録媒体に比べれば感度が向上している。しかし、比較例２の光記録媒体では、ＣＮＲの飽和値が低くなっており、再生信号の品質が不十分であることを示している。この原因は、透明誘電体膜ＡのＺｎＳ（８０ａｔ％）：ＳｉＯ2と透明誘電体膜ＢのＣｅＯ2（７０ａｔ％）：Ａｌ2Ｏ3との界面で反射が発生し、信号の変調度が低下したことによるものである。
本発明の実施形態に係る光記録媒体の一例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施形態に係る光記録媒体の他の例を示す断面図。 本発明の実施例における光記録媒体のライトストラテジーを示す図。 実施例および比較例１の光記録媒体について、記録パワーとＣＮＲとの関係を示す図。 実施例および比較例２の光記録媒体について、記録パワーとＣＮＲとの関係を示す図。
符号の説明
１、２、３…ＰＣ基板、
１１…透明誘電体膜Ｂ、１２…記録膜、１３…透明誘電体膜Ｂ、１４…透明誘電体膜Ａ、１５…反射膜、
２１…透明誘電体膜Ａ、２２…透明誘電体膜Ｂ、２３…記録膜、２４…透明誘電体膜Ｂ、２５…反射膜、
３１…透明誘電体膜Ａ、３２…透明誘電体膜Ｂ、３３…記録膜、３４…透明誘電体膜Ｂ、３５…透明誘電体膜Ａ、３６…反射膜、３７ａ、３７ｂ…界面膜、
４１…透明誘電体膜Ａ、４２…透明誘電体膜Ｂ、４３…記録膜、４４…透明誘電体膜Ｂ、４５…透明誘電体膜Ａ、４６…透明誘電体膜Ｂ、４７…透明誘電体膜Ａ、４８…反射膜、４９ａ、４９ｂ…界面膜、
５１…透明誘電体膜Ｂ、５２…記録膜、５３…透明誘電体膜Ｂ、５４…透明誘電体膜Ａ、５５…半透明反射膜、６１…反射膜、６２…透明誘電体膜Ａ、６３…透明誘電体膜Ｂ、６４…記録膜、６５…透明誘電体膜Ｂ、７０…中間分離層、
８１…反射膜、８２…透明誘電体膜Ａ、８３…透明誘電体膜Ｂ、８４…記録膜、８５…透明誘電体膜Ｂ、８６…カバーシート。

Claims (2)

  1. 記録膜の両側または片側に２層以上の誘電体膜の積層膜を有し、前記各々の誘電体膜の材料は無機酸化物、無機窒化物、無機硫化物および無機フッ化物からなる群より選択される１種の化合物または２種以上の化合物の混合物を主成分とし、かつ互いに積層された誘電体膜材料ＡおよびＢの屈折率をそれぞれｎＡおよびｎＢとしたとき、
    （ｎＡ−ｎＢ）／（ｎＡ＋ｎＢ）≦０．０５
    の関係を満たすことを特徴とする光記録媒体。
  2. 前記無機酸化物はＨｆ−Ｏ、Ｚｒ−Ｏ、Ｙ−Ｏ、Ｃｒ−Ｏ、Ｎｂ−Ｏ、Ｔａ−Ｏ、Ｉｎ−Ｏ、Ａｌ−Ｏ、Ｔｉ−Ｏ、Ｓｎ−Ｏ、Ｍｇ−Ｏ、Ｃｅ−Ｏ、Ｂｉ−Ｏ、Ｇａ−ＯおよびＳｉ−Ｏからなる群より選択され、前記無機窒化物はＳｉ−Ｎ、Ｇｅ−Ｎ、Ｓｎ−Ｎ、Ｂ−Ｎ、Ｃ−ＮおよびＡｌ−Ｎからなる群より選択され、前記無機硫化物はＺｎ−Ｓであり、前記無機フッ化物はＭｇ−ＦおよびＣａ−Ｆからなる群より選択されることを特徴とする請求項１に記載の光記録媒体。
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