WO2006107013A1 - Appareil de réglage d’alimentation et appareil de fabrication de semi-conducteur - Google Patents

Appareil de réglage d’alimentation et appareil de fabrication de semi-conducteur Download PDF

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Publication number
WO2006107013A1
WO2006107013A1 PCT/JP2006/307030 JP2006307030W WO2006107013A1 WO 2006107013 A1 WO2006107013 A1 WO 2006107013A1 JP 2006307030 W JP2006307030 W JP 2006307030W WO 2006107013 A1 WO2006107013 A1 WO 2006107013A1
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WO
WIPO (PCT)
Prior art keywords
power
heater
supply
fluctuation
regulator
Prior art date
Application number
PCT/JP2006/307030
Other languages
English (en)
Japanese (ja)
Inventor
Hideo Ishizu
Masayuki Suzuki
Original Assignee
Kokusai Electric Semiconductor Service Inc.
Sanko Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Semiconductor Service Inc., Sanko Co., Ltd. filed Critical Kokusai Electric Semiconductor Service Inc.
Priority to JP2007511224A priority Critical patent/JP5204481B2/ja
Priority to CN2006800062069A priority patent/CN101128972B/zh
Publication of WO2006107013A1 publication Critical patent/WO2006107013A1/fr
Priority to HK08108043.2A priority patent/HK1112536A1/xx

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/275—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/293—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
    • G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
    • G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating

Definitions

  • the present invention relates to a supply power regulator that supplies power to a heater, and a semiconductor manufacturing apparatus using the same.
  • FIG. 3 shows a conventional supply power regulator for a heater.
  • the heater power supply regulator 20 has a power receiving terminal block 2 connected to the AC power source 1 at its input end and a distribution terminal block 6 connected to the heater 7 at its output end.
  • a power breaker 3, a power transformer 4, and a power control thyristor 5 as a power regulator are connected between the power receiving terminal block 2 and the distribution terminal block 6.
  • the heater 7 is provided with a thermocouple 8 for temperature measurement.
  • AC power supply 1 is received by power receiving terminal block 2, and power is supplied to power transformer 4 through power breaker 3.
  • the power transformed by the power transformer 4 is controlled by the power control thyristor 5 and supplied from the distribution terminal block 6 to the heater 7.
  • the heater 7 is heated and the temperature of the heater 7 changes.
  • the heater temperature is measured by a temperature measuring thermocouple 8 and input to a temperature controller 9.
  • the temperature controller 9 calculates the difference between the measurement temperature measured by the thermocouple 8 for temperature measurement and the set temperature, and calculates the amount of electric power to be supplied to the heater 7 according to the temperature difference.
  • the calculation result is converted into a phase control amount and output as a control signal from the temperature controller 9 to the power control thyristor 5.
  • the power control thyristor 5 supplies power to the heater 7 according to the timing of the control signal.
  • the heater supply power regulator 20 detects the heater temperature and determines the timing at which the temperature controller 9 outputs a control signal, and controls the phase of the power control thyristor 5 according to this timing.
  • the temperature of the heater 7 is controlled to become the set temperature.
  • FIG. 4 shows how this phase is controlled.
  • Fig. 4 (a) shows the power supply waveform of the AC power supply
  • Fig. 4 (b) shows the power control thyristor control signal for controlling the power control thyristor.
  • the power control thyristor control signal generation power for each cycle of the AC power supply is set to the power control period A, which is the period until the power supply waveform reaches zero volts.
  • the period until the control signal is generated is designated as reactive power period B.
  • the power supply is required to have a maximum power that is greater than that required when the temperature is stable. Therefore, the active power when the temperature is stable is only about 60% to 80% of the maximum power, and the rest is reactive power, so the efficiency as a power source is bad.
  • Zero cross control has the same circuit power as Fig. 3
  • SSR solid state relay
  • Fig. 5 shows how this zero-cross control is performed.
  • Fig. 5 (a) shows the power supply waveform of the AC power supply
  • Fig. 5 (b) shows the SSR control signal for power control that controls the SSR. Uses a firing method that turns on the SSR when the power supply waveform is at zero volts.
  • the AC power supply's specified time (A + B) is set to one cycle (one cycle time), and the power control SSR control signal is output during This period is referred to as power control period A, and other periods are referred to as non-energization period B during which no power is consumed.
  • Zero-crossing control simply turns the power on and off, so no reactive power is generated in principle.
  • FIG. 6 shows a control method using a phase advance capacitor.
  • the solid line in Fig. 6 (a) shows the supply-side AC power supply waveform W1
  • the dotted line shows the control-side power supply waveform W2.
  • Figure 6 (b) shows the thyristor control signal for power control.
  • the power control at the phase angle P1 is, for example, 70%.
  • the SSR has a relatively large on-state voltage compared to a high-speed switching power control semiconductor such as an insulated bipolar transistor IGBT (Insulated Gate Bipolar Transistor). Because of this, there was a problem that the responsiveness of the heater temperature deteriorated. Also, when using a phase advance capacitor, With capacitor correction, power adjustment is required to limit the profile up to the maximum power. This is because the phase is advancing, and suddenly the phase is lost when the maximum power is applied. Therefore, it was not easy to use.
  • IGBT Insulated Gate Bipolar Transistor
  • An object of the present invention is to solve the above-mentioned problems of the prior art, and is compact, excellent in temperature responsiveness, stable against power supply fluctuations and load fluctuations, and easy to use. It is to provide a semiconductor manufacturing apparatus.
  • a heater provided around the reactor, and a supply power regulator that adjusts the supply power to the heater;
  • the power supply regulator converts the AC voltage of the AC power source into AC power corresponding to the frequency of the control signal and supplies it to the heater, and the reverse generated by the switching operation of the IGBT conversion.
  • a semiconductor manufacturing apparatus comprising a regenerative IGB T change for regenerating an electromotive force and returning it to the AC power source.
  • the present inventor has found that the IGBT is optimal for the above-mentioned object in consideration of power consumption, high-speed switching, and the like.
  • the present inventors have come up with the idea that if switching is performed, it is not necessary to provide a rectifier circuit.
  • the supply power regulator of the embodiment supplies the output of the converter that performs high-speed switching operation as power to the heater, and uses an IGBT that is a high-speed switching power control element for the converter device. Speak.
  • the power source is effectively used by switching the AC voltage of the AC power source directly with an IGBT and supplying pulsed AC power to the heater so that the reactive power is almost zero.
  • a supply power regulator 21 for supplying power from an AC power source 1 to a heater 7 includes a power receiving terminal block 2 connected to the AC power source 1 at its input end, and a heater at its output end. Distribution terminal block 6 connected to 7.
  • the AC power source 1 is, for example, a single-phase commercial power source having a frequency of 50Z60Hz and AC 200V.
  • the heater 7 is, for example, a resistance-mouth heat heater made of molybdenum silicide.
  • a power supply breaker 3 is connected to the power receiving terminal block 2, and a power transformer 4 is further connected as necessary.
  • AC power source 1 is received by power receiving terminal block 2, and power is supplied to power source transformer 4 through power source breaker 3.
  • This power transformer 4 may not be used depending on the specifications of the heater 7.
  • the supply power regulator 21 may prepare a plurality of IGBT conversions 11 so that the heater 7 can be divided into a plurality of regions and individually controlled.
  • the secondary side of the power transformer 4 further includes an input side filter circuit 10, an IGBT converter 11, a power fluctuation detection means 22, a load fluctuation detection means 23, a temperature fluctuation detection means 24, and a variable frequency.
  • Means (hereinafter referred to as frequency variable circuit) 15 and an output side filter circuit 30 are provided.
  • the power transformed by the power supply transformer 4 is supplied to the IGBT transformer 1 controlled by the frequency variable circuit 15 through the input side filter circuit 10 and connected to the distribution terminal block 6 through the output side filter circuit 30.
  • the input-side filter circuit 10 is a low-pass filter using LC as a filter system, and has a configuration in which filter elements are arranged in the order of CLC.
  • Coil L is inserted into the input line and common line divided into L1-1 and L1-2.
  • the capacitor C11 before the LC is for removing high-frequency components on the power supply waveform and for reducing loss, and it is desirable to use a capacitor with a very small capacity.
  • the cut-off frequency of the low-pass filter is set to 1Z10 to 1Z40 (500Hz to 2KHz) at the switching frequency (the number of times the IGBT is turned ONZOFF in 1 second and set to 20KHz in this example) from the viewpoint of power supply waveform and noise. Yes. Therefore, it is possible to cut off high frequency components and reliably supply electric power of the target commercial frequency (50 or 60 Hz) to the heater 7.
  • the input side filter circuit 10 suppresses electromagnetic noise generated by switching the IGBT transformation 11 at high speed and high frequency. Therefore, induction of electromagnetic noise in the input line of the IGBT converter 11 connected to the AC power source 1 side can be suppressed, and noise failure can be prevented from occurring in the AC power source.
  • the output side filter circuit 30 is a low-pass filter using LC as a filter system, and is configured in the order of filter elements LCC.
  • the coil L is divided into L2-1 and L2-2 and inserted in the output line and common line.
  • the capacitor C2-2 after the LC is a capacitor for removing a high frequency component on the power supply waveform as described in the input side filter circuit 10.
  • the cutoff frequency of this low-pass filter is similarly 500 Hz to 2 kHz.
  • the output side filter circuit 30 smoothes (smooths) the output obtained by switching with the IGBT converter 11 and effectively removes harmonic components contained in the output.
  • the IGBT conversion 11 includes a power IGBT conversion 1 la and a regeneration IGBT conversion 1 lb.
  • the IGBT transformation 11 is preferably a double arm type because switching of positive voltage 'current and negative voltage' current waveforms is performed separately.
  • the power IGBT converter 11a is also composed of a high-speed rectifier circuit FRD1 and a chopper section and a force with IGBT2.
  • the chopper part has an upper arm to which a PWM signal is partially applied and a lower arm.
  • IGBT conversion for regeneration 1 lb is equipped with IGBT3 and high-speed rectifier circuit FRD2.
  • the alternating current is directly switched at the high-speed and high-frequency basic carrier frequency by the IGBT2.
  • the switch timing by the PWM method detects the zero cross point from the alternating current of the supplier, and adjusts the control signal (PWM signal) based on the zero cross point. Then, the alternating current of the supply source is switched at the combined carrier frequency to obtain a pulse modulated wave, and this is supplied to the heater 7 via the output side filter circuit 30.
  • the control signal output from the frequency variable circuit 15 changes the duty ratio of the control signal applied to the gate (arm) of the IGBT according to fluctuations (temperature, power, load).
  • FIG. 8 shows the switching operation of the main part of the supply power regulator shown in FIG. 7, and the voltage waveforms at each point ((a) to (, (f) to (i)) shown in FIG.
  • the operation of the IGBT converter 11 will be described in detail with reference to Fig. 8.
  • the voltage waveform A of the commercial frequency AC power supply is supplied to the terminal block TBI as shown in (a).
  • the input frequency of the PWM signal to the IG BT converter 11 is fixed at 20 KHz (50 sec), as shown in (b) and (c) on the upper and lower arms of IG BT2, respectively.
  • the PWM waveform 11 output voltage waveform B is such that the commercial frequency AC power supply is energized only when IGBT2 is ON (when the PWM signal is applied).
  • the output waveform is as shown in (d). It is smoother and the output side filter circuit 30 outputs a voltage waveform with less distortion and a commercial frequency as shown in (e) via the distribution terminal block (TB2).
  • the voltage peak value of the supply voltage that is output to the final load is controlled by changing the time that IGBT2 is ON, so the frequency of the supply voltage is controlled by the PWM signal to IGBT2 that is used for IGBT conversion 11. Without changing the value, only the peak value can be controlled within the range of 0 to 70% and output to the load!
  • the pulse width of the chopper PWM signal applied to the upper arm and lower arm of IGBT 2 is larger than the pulse widths shown in (b) and (c) above, as shown in (f) and (g). If it is increased, the voltage waveform B at the output of the IGBT converter 11 becomes a waveform as shown in (h), and the voltage waveform of the supply voltage output to the final load (i) is as described above (e). Can increase the voltage peak value
  • IGBT2 which is the switching element that constitutes this IGBT transformation 11, is a bipolar power transistor combined with a voltage-driven gate, and has low gate drive power consumption and is suitable for high-speed switching. It is a high-frequency and large-capacity element, and its on-voltage is much smaller than that of MOSFET (SSR). This IGBT2 is controlled at a high frequency to reduce reactive power.
  • SSR MOSFET
  • the temperature fluctuation detection means 24 detects the temperature fluctuation of the heater 7 and outputs a feedback signal corresponding to the fluctuation to the frequency variable circuit 15.
  • This temperature fluctuation detecting means 24 has a temperature measuring thermocouple 8 as a temperature sensor and a temperature controller 9 for adjusting the heater temperature.
  • the required number of thermocouples 8 for temperature measurement are provided near the heater 7, and the heater temperature is measured by the thermoelectromotive force.
  • the temperature controller 9 obtains the temperature difference (temperature fluctuation) between the measured temperature of the heater 7 measured by the thermocouple 8 for temperature measurement and the set temperature. In accordance with this temperature difference, the amount of power to be supplied to the heater 7 is calculated, and the calculation result is output to the frequency variable circuit 15 as a feedback signal.
  • the temperature controller 9 outputs an alarm when a temperature abnormality is detected.
  • the power fluctuation detection means 22 detects a fluctuation in output power from the input-side filter circuit 10 and outputs a feedforward signal corresponding to the fluctuation to the frequency variable circuit 15.
  • This power fluctuation detection means 22 includes a power transformer 12 that measures the current flowing through the output of the input side filter circuit 10, a voltage measurement line 13 that measures the output line voltage of the input side filter circuit 10, and a power supply voltage ' Current feedforward circuit 14.
  • the power supply voltage / current feedforward circuit 14 determines the difference between the measured current measured by the current transformer 12 and the set current, and the measured voltage and setting measured by the voltage measurement line 13. Find the difference from the voltage. The product (electric power) of these differences is the power supply fluctuation. This power supply fluctuation is reported to the frequency variable circuit 15 as a feedforward signal.
  • the load fluctuation detecting means 23 detects a fluctuation in the output power supplied to the heater 7, and outputs a feedback signal corresponding to the fluctuation to the frequency variable circuit 15.
  • This load fluctuation detecting means 23 is a voltage measurement line 17 for measuring the output line voltage of the output side filter circuit 30. And a current transformer 18 for measuring the current flowing through the heater 7 and a control voltage / current feedback circuit 16.
  • the control voltage / current feedback circuit 16 calculates the difference between the measured voltage measured by the voltage measurement line 17 and the set voltage and the difference between the measured current measured by the current transformer 18 and the set current. .
  • the product of these differences (electric power) is the load fluctuation.
  • This load variation is applied to the frequency variable circuit 15 as a feedback signal.
  • the current transformer 18 may be provided on the heater 7 side outside the distribution terminal block 6 in order to accurately measure fluctuations in the load current.
  • the frequency variable circuit 15 frequency-controls the IGBT conversion 11 according to the fluctuation results of the power fluctuation detection means 22 and the load fluctuation detection means 23.
  • the frequency variable circuit 15 includes a fluctuation signal output from the control voltage / current feedback circuit 16 of the power supply voltage of the power supply fluctuation detection means 22, the current feedforward circuit 14 and the load fluctuation detection means 23, and the temperature. From the signal output from the temperature controller 9 of the fluctuation detecting means 24, a gate control signal having a frequency corresponding to the amount of power to be supplied to the heater 7 is added to the gate of each IGBT constituting the IGBT converter 11.
  • the IGBT is frequency controlled, and the electric power supplied to the heater 7 is controlled by changing the frequency substantially continuously.
  • the controllability of power is improved as the frequency variable width is larger.
  • the frequency control by the frequency variable circuit 15 is the same as the VF (variable frequency) control of the WVF control in that the frequency is changed.
  • This frequency control includes PWM control that controls the duty ratio while keeping the basic carrier frequency constant. V and deviation of VF control and PWM control are zero cross control because the IGBT is turned on at zero volt.
  • the temperature controller 9 and the frequency variable circuit 15 control the temperature of the heater 7 to be the set temperature as follows.
  • the temperature controller 9 calculates the temperature difference between the measured temperature and the set temperature, calculates the amount of power to be supplied to the heater 7 according to the temperature difference, and outputs the calculation result to the frequency variable circuit 15. Output.
  • the frequency variable circuit 15 provides the IGBT conversion 11 with a gate control signal having a frequency corresponding to the output value from the temperature controller 9.
  • the IGBT converter 11 converts the AC power from the input-side filter circuit 10 into AC power having a frequency corresponding to the gate control signal of the frequency variable circuit 15. Instead, the heat is supplied to the heater 7 via the output side filter circuit 30. When electric power is supplied to the heater 7, the temperature of the heater 7 changes.
  • Feedback control is performed by such a closed loop of temperature fluctuation detection ⁇ control calculation ⁇ output of output value ⁇ temperature change ⁇ temperature fluctuation detection ⁇ ⁇ . Since the output amount is determined by the temperature controller 9 and the frequency variable circuit 15 after detecting the temperature state, the feedback control can be performed satisfactorily. Therefore, the temperature fluctuation of the heater is corrected, stable electric power can be supplied to the heater 7, and the heater 7 can be maintained at a predetermined temperature. In addition, since frequency control is zero-cross control, highly efficient control without reactive power can be achieved.
  • the voltage fluctuation becomes a current fluctuation and a voltage fluctuation in the output of the input side filter circuit 10.
  • the current fluctuation and voltage fluctuation are measured by the current transformer 12 and the voltage measurement line 13 and detected by the power supply voltage'current feedforward circuit 14.
  • a control signal corresponding to the power fluctuation is input from the power supply voltage / current feedforward circuit 14 to the frequency variable circuit 15.
  • the frequency variable circuit 15 outputs a gate control signal having a frequency corresponding to the difference between the power supply power and the set power.
  • the gate control signal is added to the IGBT transformation 11 to control the frequency of the IGBT transformation 11.
  • the heater 7 when the heater temperature is favorably feedback-controlled, the heater 7 may be disturbed (for example, exposed to outside air), or the properties of the heater may be slightly changed. When it fluctuates, it appears as a fluctuation in the output power of the IGBT converter 11. That is, the load current flowing through the heater 7 and the load voltage applied to the heater 7 fluctuate. This current fluctuation and voltage fluctuation are detected by the current transformer 18 and the voltage measurement line 17 and measured by the control voltage / current feedback circuit 16. From the control voltage / current feedback circuit 16, a signal corresponding to the power fluctuation is input to the frequency variable circuit 15. The frequency variable circuit 15 uses this signal to control the frequency gate according to the difference between the power supply and the set power. Output a signal.
  • the gate control signal is added to the IGBT converter 11 to control the frequency. Therefore, the load fluctuation is corrected and stable power can be supplied to the heater 7. In addition, since frequency control is zero-cross control, highly efficient control without reactive power can be achieved.
  • This load fluctuation control has two steps, disturbance ⁇ power fluctuation detection, compared to temperature fluctuation control that goes through three steps of disturbance ⁇ heater temperature change ⁇ thermocouple detection, so the thermocouple detection step can be omitted. Fast response characteristics.
  • the power supply fluctuation detection means 22, the load fluctuation detection means 23, the temperature fluctuation detection means 24, and the frequency variable circuit 15 are provided in the power supply regulator 21, but this is not an example.
  • a power fluctuation detection means 22, a load fluctuation detection means 23, a temperature fluctuation detection means 24, and a frequency variable circuit 15 are provided. These may be combined.
  • the frequency variable circuit 15 outputs the gate control signal to the IGBT from the power fluctuation detection means 22, the load fluctuation detection means 23, the temperature fluctuation detection means 24, and the fluctuation signal of 24 powers. Another embodiment will be described.
  • the power fluctuation detection means 22 converts the current by the current transformer 12 and the voltage by the voltage measurement line 13 from the effective value (RMS) to DC by the ACZDC converters 22a and 22b, respectively, and the current by the calculator 22c (DC)
  • X Voltage (DC) —Calculate the secondary power and input it to the frequency variable circuit 15 as the primary power fluctuation feedback signal FB1.
  • the temperature fluctuation detecting means 24 inputs the signal output from the temperature controller 9 to the frequency variable circuit 15 as a power setting signal.
  • the frequency variable circuit 15 has two power gain adjusters 15a and 15b and one power setting gain adjuster 15c inside, and can be adjusted individually by analog calculation or CPU calculation. Adjust the level of each signal level. Each level-adjusted signal is input to the adder 15f and added. This addition is also analog or CPU Is done by.
  • the primary side power fluctuation feedback signal FBI and the secondary load fluctuation feedback signal FB2 are input to the frequency variable circuit 15, respectively, the primary side feedback power fluctuation signal FBI and the secondary side
  • the gain of the load fluctuation feedback signal FB2 is adjusted by the power gain adjusters 15a and 15b, inverted by the inverters 15d and 15e, respectively, and input to the adder 15f.
  • the adder 15f compares the feedback signal FBI ′ (FB2 ′) when the power setting signal is output in advance with the feedback signal FB 1 (FB2). The difference is added to the power setting signal as power fluctuation (load fluctuation).
  • the power setting signal is input from the temperature variation detecting means 24 to the frequency variable circuit 15, the power setting signal is input to the adder 15f after the gain is adjusted by the power setting gain adjuster 15c.
  • the frequency variable circuit 15 uses the adder 15f to change the fluctuations of the primary-side power fluctuation feedback signal FBI and the secondary-side load fluctuation feedback signal FB2 that have been gain-adjusted as described above.
  • the optimal power setting signal is output as a gate control signal (IGBT frequency setting signal).
  • FIG. 2 is a specific explanatory diagram of the input side filter circuit 10, the IGBT converter 11, and the output side filter circuit 30 described above.
  • Both the input side filter circuit 10 and the output side filter circuit 30 are configured by normal mode filter circuits.
  • the input-side filter circuit 10 is connected in parallel between the choke coil ACL 1 connected in series to the input line 31 and the input line 31 on the power side of the choke coil ACL 1 11 and the common line 33.
  • multiple capacitors CF1 to CF6 Power is also constructed.
  • the input side filter circuit 10 is configured by a normal mode filter circuit, electromagnetic noise leaking from the IGBT modification 11 to the input side can be effectively attenuated.
  • the output side filter circuit 30 includes a choke coil ACL2 connected in series to the output line 32, and a plurality of capacitors connected in parallel between the output line 32 on the heater 7 side of the choke coil ACL2 and the common line 33. Consists of CF7 to CF12. If the output side filter circuit 30 is configured with a normal mode filter circuit, harmonic components contained in the AC power output from the IGBT converter 11 can be effectively removed. Also, do not provide an element on the common line 33! / Zoom mode filter is a high frequency spike component (back electromotive force) Can be returned to lb. As a result, it is possible to effectively perform power regeneration without releasing energy on the common line 33, and the energy efficiency of the AC power source 1 can be improved.
  • the IGBT converter 11 is composed of a power IGBT conversion 11 & which is a main circuit switching element section that performs ONZOFF of the main circuit, and a regenerative IGBT BT converter l ib that operates when the main circuit switching element is OFF. It is configured and integrated into a package. Each element consists of two systems, positive voltage * current and negative voltage * current, and a high-speed rectifier element is also arranged to prevent backflow.
  • the power IGBT converter 11a includes a high-speed rectifier circuit FRD1, a series upper and lower two-stage front-stage switch circuit IGBT1, a snubber circuit CRF1, and a series upper and lower two-stage rear-stage switch circuit (part of Chiyoba). You are composed. In Figure 2, two IGBTs are prepared to allow a large amount of current to flow. As a switching method, the IGBT conversion 11a for electric power is ONZOFF controlled by PWM control (pulse width modulation) as described above.
  • PWM control pulse width modulation
  • the regenerative IGBT converter l ib operates by judging whether the power supply voltage is positive or negative. Depending on the pure resistance load with a pure resistance load or inductive load, it is desirable to have a circuit configuration that can adjust the switching operation with a delay time.
  • the high-speed rectifier circuit FRD1 is composed of a center-tap type high-speed rectifier element with the input line 31 connected to the center tap. Then, the upper switch circuit IGBT1 is divided into the upper and lower stages according to the polarity. [0047]
  • the front-stage switch circuit IGBT1 and the rear-stage switch circuit IGBT2 are both composed of tabular IGBTs stacked in two stages in series, and a freewheel diode is connected in parallel to each IGBT.
  • the front-stage switch circuit IGBT1 and the rear-stage switch circuit IGBT2 are operated in parallel, and the positive half-wave distributed by the high-speed rectifier circuit FRD1 is directly switched by the upper IGBT and the negative half-wave is directly switched by the lower IGBT.
  • the snubber circuit CRF1 is also configured in a tabular form, and is commonly connected to the front-stage switch circuit IGBT1 and the rear-stage switch circuit IGBT2, and generates current in the circuit when each of the IGBTs constituting them is off and flows through the freewheel diode FWD. Dissipate as heat.
  • the power IGBT conversion 11a distributes the AC applied to the input line 31 according to the polarity by the high-speed rectifier circuit FRD1, and switches the front switch circuit IGBT1 and the rear switch circuit IGBT2 to obtain AC power. Apply AC power to the output side filter circuit 30. Also, the snubber circuit CRF1 dissipates the back electromotive force generated in the power IGBT converter 11a.
  • IGBT conversion for regeneration l ib is a center tap type high-speed rectifier circuit FRD2 with a common line 33 connected to the center tap, a series upper and lower two-stage tabular switch circuit IGBT3, and a switch circuit IGBT3. It consists of two single-type snubber circuits CRF2 and CRF3 connected in parallel to the stage.
  • FIG. 10 shows an example of a perspective view of a heat treatment apparatus 110 as a semiconductor manufacturing apparatus for performing heat treatment on a semiconductor substrate, which is one of processes for manufacturing a semiconductor according to an embodiment of the present invention.
  • This heat treatment apparatus 110 is a batch type vertical heat treatment, and has a casing 112 in which a main part is arranged.
  • a reaction furnace 140 is arranged on the upper rear side in the housing 112. In this reaction furnace 140, a substrate support 130 loaded with a plurality of substrates is carried and heat treatment is performed.
  • FIG. 11 shows an example of a cross-sectional view of the reaction furnace 140.
  • the reactor 140 has a reaction tube 1 42 made of quartz.
  • the reaction tube 142 has a cylindrical shape with the upper end closed and the lower end open. Below this reaction tube 142, a quartz adapter 44 is arranged to point to the reaction tube 142.
  • a reaction vessel 143 is formed by the reaction tube 142 and the adapter 144.
  • a heater 146 is disposed around the reaction tube 142 excluding the adapter 44 in the reaction vessel 143.
  • the lower part of the reaction vessel 143 formed by the reaction tube 142 and the adapter 144 is opened for inserting the substrate support 130, and the open portion (furnace portion) is connected to the furnace seal cap 148 by the adapter 144. It is made to seal by contact
  • the furnace seal cap 148 supports the substrate support 130 and is provided so as to be able to move up and down together with the substrate support 130.
  • the substrate supporter 130 supports a large number of, for example, 25-: L00 substrates 154 in a substantially horizontal state in multiple stages with gaps, and is loaded into the reaction tube 142.
  • the adapter 144 is provided with a gas supply port 156, a gas exhaust port 159, and a force S integrally with the adapter 144.
  • a gas introduction pipe 160 is connected to the gas supply port 156, and an exhaust pipe 162 is connected to the gas exhaust port 159.
  • the processing gas introduced from the gas introduction pipe 160 to the gas supply port 156 is supplied into the reaction pipe 142 via the gas introduction pipe 160 and the nozzle 166 provided on the side wall of the adapter 144.
  • each unit constituting the heat treatment apparatus 110 that is, the substrate processing apparatus for performing the heat treatment, is controlled by the controller 170.
  • the pod 116 is transferred from the pod stage 114 to the pod shelf 120 by the pod transfer device 118, and stocked on the pod shelf 120.
  • the pod 116 stocked on the pod shelf 120 is transported and set to the pod opener 122 by the pod transport device 118, the lid of the pod 116 is opened by the pod opener 122, and the pod 116 is detected by the substrate number detector 124. Detect the number of substrates 154 stored in the.
  • the substrate transfer machine 126 takes out the substrate 154 from the pod 116 at the position of the pod opener 122 and transfers it to the notch aligner 128. In the notch aligner 128, the notch is detected and aligned while the substrate 154 is rotated.
  • the substrate transfer machine 126 takes out the substrate 154 from the notch aligner 128 and transfers it to the substrate support 130.
  • reaction furnace 140 reaction vessel 143 set to a temperature of, for example, about 600 ° C.
  • the substrate support 130 loaded with is inserted, and the reactor 140 is hermetically sealed with the furnace seal cap 148.
  • the furnace temperature is raised to the heat treatment temperature, and the gas is introduced into the reaction tube 142 from the gas introduction pipe 160 through the gas supply port 156, the adapter 144, the gas introduction path 164 provided in the side wall portion, and the nozzle 166. Introduce processing gas.
  • the substrate 154 is heat-treated, the substrate 154 is heated to a set temperature of 1000 ° C., for example.
  • the power supply regulator of the embodiment is used as a part of the controller 170.
  • the temperature in the furnace is lowered to a temperature of about 600 ° C, and then the substrate support 130 supporting the heat-treated substrate 154 is unloaded from the reaction furnace 140 to support the substrate. While all the substrates 154 supported by the tool 130 are cooled, the substrate support tool 130 is put on standby at a predetermined position.
  • the substrate transfer device 126 takes out the substrate 154 from the substrate support 130, and the empty pod set in the pod opener 122 Transport to 116 and house.
  • the pod carrying device 118 carries the pod 116 containing the substrate 154 to the pod shelf 120 or the pod stage 114 to complete a series of processes.
  • the power supply regulator according to the embodiment has the following effects.
  • a full-wave rectifier circuit has a magnitude of 200 (W) X 350 (D) X 100 (H) in the 200A class, which also depends on its capacity. Supply power with such a full-wave rectifier circuit
  • the overall size of the adjuster is about 600 (W) X 800 (D) X 1200 (H).
  • the size of the entire power supply regulator can be reduced to about 80%.
  • the harmonic component included in the output of the IGBT transformation is suppressed by the output side filter circuit, the harmonic component in the AC power supplied to the heater can be attenuated.
  • the energy efficiency of the AC power supply can be improved.
  • IGBT converters are switched at a high speed and a high frequency, so that the number of counter electromotive force generations is so high that power regeneration is performed frequently, which can greatly contribute to the improvement of energy efficiency.
  • the temperature fluctuation feedback control is incorporated, so that a control system with excellent temperature stability can be provided. In addition, stable power control is possible, and usability is good. Since zero-crossing control is used, it is possible to provide a highly efficient supply power regulator that can effectively use power source power that has no reactive power in principle.
  • the output of the temperature controller 9 is added to the frequency variable circuit 15 and the gate control signal of the IGBT is output, it can be compatible with the conventional system. Therefore, the conventional system power can be easily changed to this system with only a slight change.
  • the arithmetic function is ported to the frequency variable circuit 15, and the temperature controller is simply a circuit that detects only the temperature fluctuation. You can make it up!
  • both the power supply voltage fluctuation and the load fluctuation are taken into the control in addition to the temperature fluctuation.
  • only the power supply voltage fluctuation is taken into the control in the temperature fluctuation control.
  • only load fluctuations may be taken into the temperature fluctuation control. In the former, it is possible to obtain stable supply power by correcting voltage fluctuations of the supply power. In the latter, it is possible to suppress the load fluctuation of the heater.
  • the supply power regulator 21 of the above-described embodiment can be used for a semiconductor manufacturing apparatus including a reaction furnace heated by a heater.
  • the reactor is composed of a quartz tube and a cylindrical heater that heats the quartz tube from the outside.
  • the power supply regulator according to the embodiment is used. If the above-described supply power regulator is used in a semiconductor manufacturing apparatus, the stability of the heater temperature can be obtained, so that a high-performance semiconductor device can be obtained.
  • the AC voltage of the AC power source is converted into AC power corresponding to the frequency of the control signal, and this AC power is supplied to the heater, and provided on the input side of the IGBT conversion.
  • Output fluctuation filter circuit for suppressing temperature fluctuation, temperature fluctuation detection means for detecting temperature fluctuation of the heater, and power fluctuation detection for detecting power fluctuation of the AC power supply from AC voltage supplied from the AC power supply to the IGBT converter
  • the amount of power to be supplied to the heater is calculated, and the frequency of the control signal applied to the IGBT converter is controlled according to the calculation result. And a frequency varying means.
  • the harmonic component included in the output of the IGBT conversion is suppressed by the output side filter circuit, it is possible to prevent the harmonic component from being included in the AC power supplied to the heater.
  • the temperature fluctuation is detected by the temperature fluctuation detecting means, the electric energy corresponding to the detection result is calculated by the frequency variable means, and the IGBT fluctuation is frequency controlled according to the calculation result, whereby the temperature fluctuation is detected.
  • the power supplied to the heater is feedback controlled. Therefore, it is possible to keep the heater temperature well at a predetermined temperature.
  • the fluctuation appears as a fluctuation in power on the input side of the IGBT converter.
  • the power fluctuation detection means detects this power fluctuation, the frequency variable means calculates the amount of power according to the detection result, and the IGBT fluctuation is frequency controlled according to the calculation result, thereby supplying power to the power fluctuation. Feedforward control. Therefore, it is possible to suppress the disturbance of the heater temperature caused by the fluctuation of the power source when the feedback control is satisfactorily performed and the amount of power supplied to the heater fluctuates.
  • the load fluctuation detection means detects this power fluctuation, the frequency variable means calculates the amount of power according to the detection result, and the IGBT fluctuation is frequency controlled according to the calculation result, thereby supplying the load fluctuation.
  • the power is feedback controlled. Therefore, it is possible to suppress the disturbance of the heater temperature that occurs when the load fluctuation occurs when the feedback control is performed well and the control of the amount of power supplied to the heater is greatly disturbed by the load fluctuation.
  • the feedback control with respect to the temperature control is incorporated into the feedback control with respect to the temperature control by incorporating the feedforward control with respect to the power supply variation and the feedback control with respect to the load variation.
  • Extremely stable against fluctuations Excellent stability and high stability in heater temperature.
  • IGBT switching is made to switch at high speed, so it has excellent temperature response.
  • the control is not based on the compensation of the phase-advancing capacitor, which improves usability.
  • the converter since the converter is composed of IGBTs, it has excellent transient response.
  • the IGBT frequency control is zero-cross control, the efficiency of the power supply can be improved.
  • the IGBT conversion is a regenerative IGBT conversion that regenerates the back electromotive force generated by the switching operation of the IGBT conversion and returns it to the AC power source. It is a power supply regulator characterized by!
  • the IGBT transformation is equipped with an IGBT transformation for regeneration, and the back electromotive force released as thermal energy is regenerated and returned to the AC power supply, so that the energy efficiency of the AC power supply can be improved.
  • a third aspect is a semiconductor manufacturing apparatus using the supply power regulator of the first or second aspect as a heater power source. Since the power supply regulator of the first invention or the second invention that provides high stability in the heater temperature is provided, a high-performance semiconductor device can be manufactured.
  • FIG. 1 is a block diagram of a supply power regulator according to an embodiment of the present invention.
  • FIG. 2 is a specific block diagram of a main part of a supply power regulator according to an embodiment of the present invention.
  • FIG. 3 is a block diagram of a power supply regulator according to a conventional example.
  • FIG. 4 is an explanatory diagram of how power is supplied by conventional phase control.
  • FIG. 5 is an explanatory diagram of how to apply power by zero-crossing control common to the prior art and the embodiment.
  • FIG. 6 is an explanatory diagram of power factor improvement by a conventional phase advance capacitor method.
  • Fig. 7 is a main part diagram of a power supply regulator according to one embodiment of the present invention.
  • FIG. 8 is a diagram showing a switching operation of a main part of the supply power regulator according to one embodiment of the present invention, and voltage waveforms at each point.
  • FIG. 9 is a specific explanatory diagram of a power supply fluctuation detecting unit 22, a load fluctuation detecting unit 23, and a frequency variable circuit 15 according to an embodiment of the present invention.
  • FIG. 10 is a perspective view showing an example of a heat treatment apparatus for performing a heat treatment on a semiconductor substrate, which is one of processes for manufacturing a semiconductor according to an embodiment of the present invention.
  • FIG. 11 is a cross-sectional view showing an example of a reaction furnace according to an embodiment of the present invention.

Abstract

L’invention concerne un appareil de fabrication de semi-conducteur permettant de réaliser un traitement thermique en transportant un support de substrat, sur lequel on charge une pluralité de substrats, jusque dans un four de mise en réaction. L’appareil de fabrication de semi-conducteur est pourvu d’un radiateur disposé à la circonférence du four de mise en réaction, et d’un appareil de réglage d’alimentation pour ajuster l’alimentation du radiateur. L’appareil de réglage d’alimentation est composé d’un convertisseur de puissance IGBT permettant de convertir une tension alternative provenant d’une alimentation alternative en une alimentation alternative conformément à la fréquence d’un signal de commande et d’alimenter le radiateur avec l’alimentation alternative, et d’un convertisseur de régénération IGBT permettant de régénérer une force électromotrice de retour générée par une opération de commutation du convertisseur IGBT et de renvoyer la force électromotrice de retour à l’alimentation alternative.
PCT/JP2006/307030 2005-04-04 2006-04-03 Appareil de réglage d’alimentation et appareil de fabrication de semi-conducteur WO2006107013A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007511224A JP5204481B2 (ja) 2005-04-04 2006-04-03 半導体製造装置、供給電力調整器、半導体デバイスの製造方法及び電力制御方法
CN2006800062069A CN101128972B (zh) 2005-04-04 2006-04-03 供给功率调节器、半导体制造装置及其制造方法
HK08108043.2A HK1112536A1 (en) 2005-04-04 2008-07-22 Supply power adjusting apparatus, semiconductor manufacturing apparatus and manufacturing method thereof

Applications Claiming Priority (2)

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JP2005-107931 2005-04-04
JP2005107931 2005-04-04

Publications (1)

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JP (2) JP5204481B2 (fr)
KR (2) KR100966375B1 (fr)
CN (3) CN102122892B (fr)
HK (2) HK1112536A1 (fr)
WO (1) WO2006107013A1 (fr)

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KR101312960B1 (ko) * 2012-08-29 2013-10-01 삼성중공업 주식회사 제동 저항기 유닛의 오류 검출 방법 및 그 방법이 기록된 기록매체
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CN102122892B (zh) 2014-02-12
JP5727450B2 (ja) 2015-06-03
KR20070102571A (ko) 2007-10-18
CN101128972B (zh) 2010-12-29
KR100940306B1 (ko) 2010-02-05
CN101902131A (zh) 2010-12-01
HK1112536A1 (en) 2008-09-05
JP5204481B2 (ja) 2013-06-05
CN101902131B (zh) 2013-06-26
JPWO2006107013A1 (ja) 2008-09-25
JP2013118385A (ja) 2013-06-13
CN102122892A (zh) 2011-07-13
KR100966375B1 (ko) 2010-06-28
KR20090042874A (ko) 2009-04-30
HK1157078A1 (en) 2012-06-22
CN101128972A (zh) 2008-02-20

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