WO2006079486A2 - Illumination system, in particular for a projection exposure machine in semiconductor lithography - Google Patents

Illumination system, in particular for a projection exposure machine in semiconductor lithography Download PDF

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Publication number
WO2006079486A2
WO2006079486A2 PCT/EP2006/000535 EP2006000535W WO2006079486A2 WO 2006079486 A2 WO2006079486 A2 WO 2006079486A2 EP 2006000535 W EP2006000535 W EP 2006000535W WO 2006079486 A2 WO2006079486 A2 WO 2006079486A2
Authority
WO
WIPO (PCT)
Prior art keywords
illumination system
rod integrator
axis
coordinate system
homogenizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2006/000535
Other languages
English (en)
French (fr)
Other versions
WO2006079486A3 (en
Inventor
Markus Brotsack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to EP06722978A priority Critical patent/EP1842102A2/en
Priority to US11/814,685 priority patent/US20080273186A1/en
Priority to JP2007552559A priority patent/JP2008529290A/ja
Publication of WO2006079486A2 publication Critical patent/WO2006079486A2/en
Publication of WO2006079486A3 publication Critical patent/WO2006079486A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70158Diffractive optical elements

Definitions

  • Illumination system in particular for a projection exposure machine in semiconductor lithography
  • the purpose of homogenizing the intensity of a light produced by a light source is served in an illumination system of a proj ection exposure machine in semiconductor lithography by a so-called rod integrator by means of which the light is guided and which is preferably arranged with its longitudinal axis parallel to an optical axis of the illumination system. Reflections occur at the walls of the rod, which generally has a flat rectangular shape, the effect being that downstream of the rod pupil distributions , also termed settings , are reflected relative to the x-axis and relative to the y-axis , and therefore symmetrically with reference to this coordinate system.
  • a light source for example a laser
  • the xyz-coordinate system is defined as a Cartesian coordinate system whose z-axis runs in the longitudinal direction of the rod and through the center of the rod cross section, while the x, y-axes run parallel to the edges of the rectangular illuminated field on the wafer or parallel to the rod edges of the rod cross section when the latter are parallel to the rectangular illuminated field on the wafer .
  • the optical axis runs through the center of the rod cross section .
  • an asymmetric pupil distribution requires that the setting produced by the optical element correspondingly provided therefor be seated outside the x- or y-axis (or the pupil distribution is asymmetric with reference to at least one axis) , as a result of which the rod would give rise to corresponding reflections in all four quadrants of the coordinate system.
  • the coordinate system of the rotated homogenizing element is denoted by x' , y' , • in order to distinguish it from that of the non-rotated one .
  • the adjustment of the asymmetrically acting optical elements and of the homogenizing element (the rod) can be performed synchronously (at the same time) or sequentially .
  • the adjustment angle or rotational angle of the elements or of the homogenizing element can be the same or different, depending on the initial pupil distribution and the desired obliquity that is prescribed by the patterns . It is also possible in this case for an adjustment angle or rotational angle to vanish .
  • the illumination system is designed such that the rod integrator is exchangeable .
  • the rod integrator is exchangeable .
  • the optical elements which can be, for example, refractive and/or diffractive optical elements in the illumination system, to be provided in a changing device, for example, so that they can be exchanged or else supported rotatably.
  • the length of the diagonal of an end face of the rod corresponds to the edge length of the rod .
  • the advantage of the solution with the exchangeable rod integrator by comparison with a rod integrator that is set at an angle consists in that the scanning field can retain the original size, and therefore results in no additional factor that leads to a reduction in throughput .
  • figure 3a shows a diagram of two poles of a dipole setting that are located on the y-axis
  • a proj ection light bundle 8 traverses an incoupling optics 9.
  • the incoupling optics 9 transmits the proj ection light bundle 8 onto an end-face entrance surface 10a of a rod integrator 10 as homogenizing element .
  • the rod integrator 10 mixes and homogenizes the light by means of multiple internal reflection .
  • a field plane of the illumination optics in which a reticle/mask system (ReMa) is arranged .
  • An adjustable field stop 11 is provided for this purpose .
  • rod integrators 10 have a decidedly rectangular shape . If such a rod integrator 10 is also used to image oblique patterns of an appropriate rotation, it is unavoidably necessary in the case of prescribed rotational angles to accept a light loss owing to the reduction of the field that turns out to be greater the flatter the rectangular rod integrator 10.
  • the rod integrator 10' ' In order to adapt to the new, now square cross section of the rod integrator 10' ' , it can also be necessary in this case likewise to find ways to exchange the other optical elements such as , for example, the refractive optical element 7 , for a correspondingly adapted refractive optical element 7 ' .
  • the size of the scanning field can be maintained in this case .
  • the rectangular rod integrator 10 need not be rotatably supported in this case, since, after all , it is exchanged for the rod integrator 10' ' with the square cross section in the case of imaging of obliquely situated patterns .
  • the square rod In order to achieve maximum freedom of a possible rotational angle a and, at the same time, not to have to accept any limitations on the size of the scanning field, the square rod should have the length of the diagonal of the end face of the rod integrator of a rectangular cross section as edge length .
  • Figure 7 shows this refinement .
  • the rod integrator of square cross section is provided with the reference numeral 21.
  • An "optimized” rotatable rod of not entirely square cross section is indicated with “22" in a non-rotated position, and with “22' “ with a maximum rotation .
  • the reference numeral 23 represents the scanning field resulting from a rotation of the optimized rod integrator .
  • Figure 8 shows an exemplary embodiment having a honeycomb condenser 24 as homogenizing element instead of the rod integrator according to the above-described exemplary embodiment .
  • the same design is present in principle, and for this reason the same reference numerals have also been used for the same parts .
  • the refractive optimum element 7 is not necessary, but is replaced instead by the honeycomb condenser 24.
  • a field lens 25 arranged downstream of the honeycomb condenser 24 in the beam direction acts like the incoupling optics 9 in accordance with figure 4.
  • the light mixing is carried out in the honeycomb condenser 24 together with the field lens 25.
  • a desired scanning slot or a field variable is set at the field stop 11 downstream of the honeycomb condenser 24 and the field lens 25.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
PCT/EP2006/000535 2005-01-29 2006-01-21 Illumination system, in particular for a projection exposure machine in semiconductor lithography Ceased WO2006079486A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06722978A EP1842102A2 (en) 2005-01-29 2006-01-21 Illumination system, in particular for a projection exposure machine in semiconductor lithography
US11/814,685 US20080273186A1 (en) 2005-01-29 2006-01-21 Illumination System, In Particular For A Projection Exposure Machine In Semiconductor Lithography
JP2007552559A JP2008529290A (ja) 2005-01-29 2006-01-21 照射システム、具体的には、半導体リソグラフにおける投影露光装置のための照射システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005004216.3 2005-01-29
DE102005004216A DE102005004216A1 (de) 2005-01-29 2005-01-29 Beleuchtungssystem, insbesondere für eine Projektionsbelichtungsanlage in der Halbleiterlithographie

Publications (2)

Publication Number Publication Date
WO2006079486A2 true WO2006079486A2 (en) 2006-08-03
WO2006079486A3 WO2006079486A3 (en) 2006-10-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/000535 Ceased WO2006079486A2 (en) 2005-01-29 2006-01-21 Illumination system, in particular for a projection exposure machine in semiconductor lithography

Country Status (6)

Country Link
US (1) US20080273186A1 (enExample)
EP (1) EP1842102A2 (enExample)
JP (1) JP2008529290A (enExample)
KR (1) KR20070100905A (enExample)
DE (1) DE102005004216A1 (enExample)
WO (1) WO2006079486A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
CN112305863A (zh) * 2019-07-25 2021-02-02 上海微电子装备(集团)股份有限公司 照明系统、光瞳椭圆度补偿方法及光刻机
CN112445076A (zh) * 2019-08-30 2021-03-05 上海微电子装备(集团)股份有限公司 光刻机、曝光系统及实现离轴照明的方法与离轴照明装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5167789B2 (ja) * 2006-12-01 2013-03-21 セイコーエプソン株式会社 光源装置、画像表示装置、プロジェクタ、照明装置、及びモニタ装置
JP6494339B2 (ja) * 2015-03-10 2019-04-03 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法
DE102018201009A1 (de) * 2018-01-23 2019-07-25 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102018201010A1 (de) * 2018-01-23 2019-07-25 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
CN112445005B (zh) * 2019-08-29 2023-08-11 深圳市中光工业技术研究院 激光光源及激光光源系统

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US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
JP2817615B2 (ja) * 1994-01-31 1998-10-30 日本電気株式会社 縮小投影露光装置
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
JPH0883743A (ja) * 1994-09-09 1996-03-26 Nikon Corp 照明光学装置
JPH09199390A (ja) * 1996-01-16 1997-07-31 Hitachi Ltd パターン形成方法、投影露光装置および半導体装置の製造方法
JPH11354424A (ja) * 1998-06-04 1999-12-24 Canon Inc 照明装置及びそれを用いた投影露光装置
JP2001313250A (ja) * 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
TW498408B (en) * 2000-07-05 2002-08-11 Asm Lithography Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002158157A (ja) * 2000-11-17 2002-05-31 Nikon Corp 照明光学装置および露光装置並びにマイクロデバイスの製造方法
DE10132988B4 (de) * 2001-07-06 2005-07-28 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
DE10158921A1 (de) * 2001-11-30 2003-06-26 Zeiss Carl Smt Ag Verfahren zum Bestimmen von mindestens einer Kenngröße, die für die Beleuchtungswinkelverteilung einer der Beleuchtung eines Gegenstandes dienenden Lichtquelle einer Projektionsbelichtungsanlage charakteristisch ist
JP4332331B2 (ja) * 2002-08-05 2009-09-16 キヤノン株式会社 露光方法
EP1434092A1 (en) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20040207829A1 (en) * 2003-04-17 2004-10-21 Asml Netherlands, B.V. Illuminator controlled tone reversal printing
US20050134820A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Method for exposing a substrate, patterning device, and lithographic apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
CN112305863A (zh) * 2019-07-25 2021-02-02 上海微电子装备(集团)股份有限公司 照明系统、光瞳椭圆度补偿方法及光刻机
CN112305863B (zh) * 2019-07-25 2021-12-03 上海微电子装备(集团)股份有限公司 照明系统、光瞳椭圆度补偿方法及光刻机
CN112445076A (zh) * 2019-08-30 2021-03-05 上海微电子装备(集团)股份有限公司 光刻机、曝光系统及实现离轴照明的方法与离轴照明装置
CN112445076B (zh) * 2019-08-30 2022-04-22 上海微电子装备(集团)股份有限公司 光刻机、曝光系统及实现离轴照明的方法与离轴照明装置

Also Published As

Publication number Publication date
DE102005004216A1 (de) 2006-08-03
KR20070100905A (ko) 2007-10-12
WO2006079486A3 (en) 2006-10-05
JP2008529290A (ja) 2008-07-31
EP1842102A2 (en) 2007-10-10
US20080273186A1 (en) 2008-11-06

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