JP2008529290A - 照射システム、具体的には、半導体リソグラフにおける投影露光装置のための照射システム - Google Patents

照射システム、具体的には、半導体リソグラフにおける投影露光装置のための照射システム Download PDF

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JP2008529290A
JP2008529290A JP2007552559A JP2007552559A JP2008529290A JP 2008529290 A JP2008529290 A JP 2008529290A JP 2007552559 A JP2007552559 A JP 2007552559A JP 2007552559 A JP2007552559 A JP 2007552559A JP 2008529290 A JP2008529290 A JP 2008529290A
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irradiation system
rod integrator
axis
rotation angle
homogenizing
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JP2007552559A
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English (en)
Japanese (ja)
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JP2008529290A5 (enExample
Inventor
マルクス ブロトザック
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カール・ツァイス・エスエムティー・アーゲー
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Publication of JP2008529290A publication Critical patent/JP2008529290A/ja
Publication of JP2008529290A5 publication Critical patent/JP2008529290A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2007552559A 2005-01-29 2006-01-21 照射システム、具体的には、半導体リソグラフにおける投影露光装置のための照射システム Pending JP2008529290A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005004216A DE102005004216A1 (de) 2005-01-29 2005-01-29 Beleuchtungssystem, insbesondere für eine Projektionsbelichtungsanlage in der Halbleiterlithographie
PCT/EP2006/000535 WO2006079486A2 (en) 2005-01-29 2006-01-21 Illumination system, in particular for a projection exposure machine in semiconductor lithography

Publications (2)

Publication Number Publication Date
JP2008529290A true JP2008529290A (ja) 2008-07-31
JP2008529290A5 JP2008529290A5 (enExample) 2009-02-05

Family

ID=36084237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552559A Pending JP2008529290A (ja) 2005-01-29 2006-01-21 照射システム、具体的には、半導体リソグラフにおける投影露光装置のための照射システム

Country Status (6)

Country Link
US (1) US20080273186A1 (enExample)
EP (1) EP1842102A2 (enExample)
JP (1) JP2008529290A (enExample)
KR (1) KR20070100905A (enExample)
DE (1) DE102005004216A1 (enExample)
WO (1) WO2006079486A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013077022A (ja) * 2006-12-01 2013-04-25 Seiko Epson Corp 光源装置、画像表示装置、プロジェクタ、照明装置、及びモニタ装置
JP2021511546A (ja) * 2018-01-23 2021-05-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影リソグラフィ用の照明光学デバイス

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
JP6494339B2 (ja) * 2015-03-10 2019-04-03 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法
DE102018201010A1 (de) * 2018-01-23 2019-07-25 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
CN112305863B (zh) * 2019-07-25 2021-12-03 上海微电子装备（集团）股份有限公司 照明系统、光瞳椭圆度补偿方法及光刻机
CN112445005B (zh) * 2019-08-29 2023-08-11 深圳市中光工业技术研究院 激光光源及激光光源系统
CN112445076B (zh) * 2019-08-30 2022-04-22 上海微电子装备（集团）股份有限公司 光刻机、曝光系统及实现离轴照明的方法与离轴照明装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221007A (ja) * 1994-01-31 1995-08-18 Nec Corp 縮小投影露光装置
JPH0883743A (ja) * 1994-09-09 1996-03-26 Nikon Corp 照明光学装置
JPH11354424A (ja) * 1998-06-04 1999-12-24 Canon Inc 照明装置及びそれを用いた投影露光装置
JP2001313250A (ja) * 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
JP2002043221A (ja) * 2000-07-05 2002-02-08 Asm Lithography Bv リソグラフィ投影装置
JP2002158157A (ja) * 2000-11-17 2002-05-31 Nikon Corp 照明光学装置および露光装置並びにマイクロデバイスの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
JPH09199390A (ja) * 1996-01-16 1997-07-31 Hitachi Ltd パターン形成方法、投影露光装置および半導体装置の製造方法
DE10132988B4 (de) * 2001-07-06 2005-07-28 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
DE10158921A1 (de) * 2001-11-30 2003-06-26 Zeiss Carl Smt Ag Verfahren zum Bestimmen von mindestens einer Kenngröße, die für die Beleuchtungswinkelverteilung einer der Beleuchtung eines Gegenstandes dienenden Lichtquelle einer Projektionsbelichtungsanlage charakteristisch ist
JP4332331B2 (ja) * 2002-08-05 2009-09-16 キヤノン株式会社 露光方法
EP1434092A1 (en) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20040207829A1 (en) * 2003-04-17 2004-10-21 Asml Netherlands, B.V. Illuminator controlled tone reversal printing
US20050134820A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Method for exposing a substrate, patterning device, and lithographic apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221007A (ja) * 1994-01-31 1995-08-18 Nec Corp 縮小投影露光装置
JPH0883743A (ja) * 1994-09-09 1996-03-26 Nikon Corp 照明光学装置
JPH11354424A (ja) * 1998-06-04 1999-12-24 Canon Inc 照明装置及びそれを用いた投影露光装置
JP2001313250A (ja) * 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
JP2002043221A (ja) * 2000-07-05 2002-02-08 Asm Lithography Bv リソグラフィ投影装置
JP2002158157A (ja) * 2000-11-17 2002-05-31 Nikon Corp 照明光学装置および露光装置並びにマイクロデバイスの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013077022A (ja) * 2006-12-01 2013-04-25 Seiko Epson Corp 光源装置、画像表示装置、プロジェクタ、照明装置、及びモニタ装置
JP2021511546A (ja) * 2018-01-23 2021-05-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影リソグラフィ用の照明光学デバイス
JP7502992B2 (ja) 2018-01-23 2024-06-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影リソグラフィ用の照明光学デバイス

Also Published As

Publication number Publication date
WO2006079486A2 (en) 2006-08-03
DE102005004216A1 (de) 2006-08-03
KR20070100905A (ko) 2007-10-12
WO2006079486A3 (en) 2006-10-05
EP1842102A2 (en) 2007-10-10
US20080273186A1 (en) 2008-11-06

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