KR20070100905A - 특히 반도체 리소그래피에서 투영 노광기를 위한 조명시스템 - Google Patents

특히 반도체 리소그래피에서 투영 노광기를 위한 조명시스템 Download PDF

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Publication number
KR20070100905A
KR20070100905A KR1020077019609A KR20077019609A KR20070100905A KR 20070100905 A KR20070100905 A KR 20070100905A KR 1020077019609 A KR1020077019609 A KR 1020077019609A KR 20077019609 A KR20077019609 A KR 20077019609A KR 20070100905 A KR20070100905 A KR 20070100905A
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KR
South Korea
Prior art keywords
rod integrator
axis
coordinate
lighting system
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077019609A
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English (en)
Korean (ko)
Inventor
마쿠스 브로트작
Original Assignee
칼 짜이스 에스엠테 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠테 아게 filed Critical 칼 짜이스 에스엠테 아게
Publication of KR20070100905A publication Critical patent/KR20070100905A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020077019609A 2005-01-29 2006-01-21 특히 반도체 리소그래피에서 투영 노광기를 위한 조명시스템 Withdrawn KR20070100905A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005004216.3 2005-01-29
DE102005004216A DE102005004216A1 (de) 2005-01-29 2005-01-29 Beleuchtungssystem, insbesondere für eine Projektionsbelichtungsanlage in der Halbleiterlithographie

Publications (1)

Publication Number Publication Date
KR20070100905A true KR20070100905A (ko) 2007-10-12

Family

ID=36084237

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077019609A Withdrawn KR20070100905A (ko) 2005-01-29 2006-01-21 특히 반도체 리소그래피에서 투영 노광기를 위한 조명시스템

Country Status (6)

Country Link
US (1) US20080273186A1 (enExample)
EP (1) EP1842102A2 (enExample)
JP (1) JP2008529290A (enExample)
KR (1) KR20070100905A (enExample)
DE (1) DE102005004216A1 (enExample)
WO (1) WO2006079486A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5167789B2 (ja) * 2006-12-01 2013-03-21 セイコーエプソン株式会社 光源装置、画像表示装置、プロジェクタ、照明装置、及びモニタ装置
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
JP6494339B2 (ja) * 2015-03-10 2019-04-03 キヤノン株式会社 照明光学系、露光装置、及び物品の製造方法
DE102018201009A1 (de) * 2018-01-23 2019-07-25 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102018201010A1 (de) * 2018-01-23 2019-07-25 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
CN112305863B (zh) * 2019-07-25 2021-12-03 上海微电子装备（集团）股份有限公司 照明系统、光瞳椭圆度补偿方法及光刻机
CN112445005B (zh) * 2019-08-29 2023-08-11 深圳市中光工业技术研究院 激光光源及激光光源系统
CN112445076B (zh) * 2019-08-30 2022-04-22 上海微电子装备（集团）股份有限公司 光刻机、曝光系统及实现离轴照明的方法与离轴照明装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897942B2 (en) * 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
JP2817615B2 (ja) * 1994-01-31 1998-10-30 日本電気株式会社 縮小投影露光装置
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
JPH0883743A (ja) * 1994-09-09 1996-03-26 Nikon Corp 照明光学装置
JPH09199390A (ja) * 1996-01-16 1997-07-31 Hitachi Ltd パターン形成方法、投影露光装置および半導体装置の製造方法
JPH11354424A (ja) * 1998-06-04 1999-12-24 Canon Inc 照明装置及びそれを用いた投影露光装置
JP2001313250A (ja) * 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
TW498408B (en) * 2000-07-05 2002-08-11 Asm Lithography Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002158157A (ja) * 2000-11-17 2002-05-31 Nikon Corp 照明光学装置および露光装置並びにマイクロデバイスの製造方法
DE10132988B4 (de) * 2001-07-06 2005-07-28 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
DE10158921A1 (de) * 2001-11-30 2003-06-26 Zeiss Carl Smt Ag Verfahren zum Bestimmen von mindestens einer Kenngröße, die für die Beleuchtungswinkelverteilung einer der Beleuchtung eines Gegenstandes dienenden Lichtquelle einer Projektionsbelichtungsanlage charakteristisch ist
JP4332331B2 (ja) * 2002-08-05 2009-09-16 キヤノン株式会社 露光方法
EP1434092A1 (en) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20040207829A1 (en) * 2003-04-17 2004-10-21 Asml Netherlands, B.V. Illuminator controlled tone reversal printing
US20050134820A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Method for exposing a substrate, patterning device, and lithographic apparatus

Also Published As

Publication number Publication date
WO2006079486A2 (en) 2006-08-03
DE102005004216A1 (de) 2006-08-03
WO2006079486A3 (en) 2006-10-05
JP2008529290A (ja) 2008-07-31
EP1842102A2 (en) 2007-10-10
US20080273186A1 (en) 2008-11-06

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Date Code Title Description
PA0105 International application

Patent event date: 20070828

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid