WO2006061967A1 - 半導体製造装置の洗浄用溶剤 - Google Patents

半導体製造装置の洗浄用溶剤 Download PDF

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Publication number
WO2006061967A1
WO2006061967A1 PCT/JP2005/020446 JP2005020446W WO2006061967A1 WO 2006061967 A1 WO2006061967 A1 WO 2006061967A1 JP 2005020446 W JP2005020446 W JP 2005020446W WO 2006061967 A1 WO2006061967 A1 WO 2006061967A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning solvent
cleaning
alcohol
solvent according
structural unit
Prior art date
Application number
PCT/JP2005/020446
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tomoyuki Hirano
Masaaki Yoshida
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Priority to US11/792,467 priority Critical patent/US20080132740A1/en
Priority to EP05806250A priority patent/EP1840199A1/en
Publication of WO2006061967A1 publication Critical patent/WO2006061967A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C11D7/262—Alcohols; Phenols fatty or with at least 8 carbon atoms in the alkyl or alkenyl chain
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a cleaning solvent, and more particularly to a cleaning solvent for a semiconductor manufacturing apparatus, and more particularly, to cleaning a supply pipe of a semiconductor manufacturing apparatus when forming an upper protective film for use in an immersion exposure process.
  • the present invention relates to a cleaning solvent used in the above.
  • Lithography method is frequently used for the manufacture of fine structures in various electronic devices such as semiconductor devices and liquid crystal devices. With the miniaturization of device structures, the resist pattern has become finer in the lithography process. It is requested.
  • the development points are generally such as shortening the wavelength of light sources such as EUV (extreme ultraviolet light), electron beam, X-ray, soft X-ray, and increasing the numerical aperture (NA) of the lens. .
  • EUV extreme ultraviolet light
  • X-ray electron beam
  • X-ray soft X-ray
  • NA numerical aperture
  • Non-Patent Document 1 Non-Patent Document 2, Non-Patent Document 2, Patent Document 3
  • a liquid refractive index medium reffractive index liquid, immersion liquid
  • pure water or a fluorine-based inert liquid having a predetermined thickness is formed on at least the resist film between the lens and the resist film on the substrate during exposure. Is to intervene.
  • a light source having the same exposure wavelength is used by replacing the exposure optical path space, which has conventionally been an inert gas such as air or nitrogen, with a liquid having a higher refractive index (n), such as pure water.
  • n refractive index
  • Non-Patent Document 1 Journal of Vacuum Science & Technology B (Vacuum Sci. Technol. B) ((Issue Country) Ameri Force), 1999, No. 17-6 , Pages 3306-3309
  • Non-Patent Literature 3 Proceedings of SPIE Vol.4691 (Proceedings of SPIE Vol.4691 ((Publishing country) USA) 2002, 4691, 459-465
  • Patent Document 1 JP-A-6-069175
  • Patent Document 2 JP-A-7-003294
  • Patent Document 3 Japanese Patent Laid-open No. 11469469 Disclosure of the invention
  • the present invention has been made in view of the above, and is a pipe cleaning used for cleaning a supply pipe of a semiconductor manufacturing apparatus when forming an upper protective film for use in a cleaning solvent, in particular, an immersion exposure process. It is an object to provide a solvent for use.
  • the cleaning solvent according to the present invention is a cleaning solvent for a resin composition for cleaning and removing the remaining resin composition from a portion that sequentially contacts with the plurality of types of resin compositions, and has a boiling point. It is a solvent containing at least an alcohol solvent at 100 ° C or higher.
  • the cleaning solvent according to the present invention can provide a cleaning solvent for a resin composition that has good cleaning performance and that can be coated with a protective film after cleaning.
  • the amount of the cleaning solvent used can be reduced, and furthermore, the cleaning solvent for the resin composition is highly reduced in foreign matter, so that a highly transparent upper protective film is formed. . For this reason, a high-resolution resist pattern can be obtained by forming an upper protective film for use in the immersion exposure process.
  • the cleaning solvent used in the present invention can completely clean the semiconductor manufacturing apparatus in the immersion exposure method by using a solvent containing at least an alcohol solvent having a boiling point of 100 ° C or higher. This eliminates the problem of the need for an extra dummy dispensation due to the lack of material and the difference in material systems, and enables the formation of a high-resolution resist pattern using immersion exposure.
  • the alcohol solvent used in the cleaning solvent according to the present invention includes isobutyl alcohol, n-butyl alcohol, 3-methyl-2-butyl alcohol, 2-methyl-1-butyl alcohol, 2-ethyl-1-butyl alcohol, 3-pen.
  • Tanol 4 Methinole _ 2 _Pentanol Monore, 2-Ethenole Hexanol, n_Hexanol, Cyclohexanol, 2-Methylcyclohexanol, 2 _Heptanol, 3 _Heptanol, n_Heptanol, 3,5-Dimethyl _ 1-hexyne _ 3 _ol, n_octanol, 2_ octanol, n_amino oleanole, sec-amyl alcohol, tert-amyl alcohol, isoamyl alcohol, glycidol, n-decanol, tetrahydrofurfuryl alcohol Le, furfuryl alcohol, terpio At least one selected from the group consisting of alcohol, neopentyl alcohol, 1-nonanol, and 3_methyl_1-butyne-1-ol. _Buty
  • the cleaning solvent according to the present invention is characterized in that the alcohol solvent is an alcohol solvent produced by filtering at least with a filter material.
  • the cleaning solvent is highly clean and does not become a contamination source, the transparency of the upper protective film can be secured, and the volume of the cleaning solvent can be reduced.
  • the pore size of the filter material is preferably 0.01 / 1 to 111 to 0.10 / im in terms of highly removing foreign matter, and is 0.02 ⁇ to 0.05 / im. It is even more preferable.
  • the filter material is not particularly limited as long as it is a material capable of forming the pore size filter, and various filter materials can be used.
  • the filter material include polyethylene, polytetrafluoroethylene, polypropylene, and nylon.
  • the cleaning solvent of the present invention is characterized in that one of the plurality of types of resin compositions is an upper protective film of a resist film.
  • the upper protective film for the resist film is preferably an upper protective film for use in an immersion exposure process.
  • the upper protective film of such a resist film is preferably formed from a material for forming a resist protective film, which contains an alkali-soluble polymer component.
  • the other polymer component may be an acrylic polymer, and the acrylic polymer has at least the following general formula (2) as a structural unit.
  • R is a hydrogen atom, a methylol group, or a hydroxyalkyl group having 1 to 5 carbon atoms
  • R is a hydrocarbon group having at least one alicyclic structure
  • k and 1 are each
  • It is preferably at least one hydrocarbon group selected from a mantyl group, a norbornyl group, an isobornyl group, a tricyclodecyl group, and a tetracyclododecyl group.
  • the R force is preferably a tricyclodecinole group and Z or a cyclohexyl group.
  • the acrylic polymer includes the following general formula (3) in which a third structural unit is added to the structural unit represented by the general formula (2). [Chemical 3]
  • R is a hydrogen atom, a methylol group, or a hydroxyalkyl group having 1 to 5 carbon atoms
  • R is a hydrocarbon group having at least one alicyclic structure
  • R is 1 to
  • R represents an alkyl group having 1 to 5 carbon atoms and a hydroxyalkyl group.
  • the R is n-
  • a til and / or isobutyl group is preferred.
  • k is 5 to 90 mol% in the general formula (3), 1 5 to 90 mol%, and preferably m is 5 to 90 mol 0/0.
  • the remaining resin composition is a resist composition that forms a resist film.
  • a resist composition may be a general-purpose positive type or negative type resist composition.
  • IBA isobutyl alcohol
  • PE polyethylene
  • PP polypropylene
  • nylon nylon shown below. Reduction of contained foreign substances was examined.
  • filter materials of various pore sizes (in parentheses) shown in Table 1 below were used. Specifically, PE (0.05 / im, Example 1), ⁇ (0.05 ⁇ , Example 2), IBA was filtered using a filter made of pyrone (0.04 ⁇ , Example 3) and ⁇ (0.02 / im, Example 4) to obtain a cleaning solvent.
  • PE 0.05 / im, Example 1
  • ⁇ 0.05 ⁇ , Example 2
  • IBA was filtered using a filter made of pyrone (0.04 ⁇ , Example 3) and ⁇ (0.02 / im, Example 4) to obtain a cleaning solvent.
  • the resin component 100 parts by mass of a copolymer having a structural unit force represented by the following chemical formula (4) was used.
  • triphenylsulfonium nonafluorobutane sulfonate 2 triphenylsulfonium nonafluorobutane sulfonate 2.
  • organic solvent a 7.0% aqueous solution of a mixed solvent of propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate (mixing ratio 6: 4) was used.
  • nitrogen-containing organic compound 0.25 parts by mass of triethanolamine was used. Furthermore, 25 parts by mass of ⁇ -petit-mouth rataton was added as an additive.
  • a resist pattern was formed using the resist composition produced as described above.
  • ARC29 organic antireflective coating composition
  • an organic antireflection film having a thickness of 77 nm was formed.
  • the resist composition is applied onto the antireflection film by using a spinner, pre-betaed at 130 ° C. for 90 seconds on a hot plate, and dried to have a film thickness of 225 nm on the antireflection film.
  • the resist film was formed.
  • the supply pipe of the semiconductor manufacturing apparatus was cleaned with the IBA obtained in Example 1, and the protective film material was spin-coated on the resist film through the supply pipe after cleaning, and applied at 90 ° C for 60 seconds. Heated to form a protective film with a thickness of 70.Onm.
  • pattern light was irradiated (exposure) using an Ar F excimer laser (wavelength: 193 nm) by an exposure apparatus Nikon-S 302A (manufactured by Nikon) through the mask pattern.
  • an exposure apparatus Nikon-S 302A manufactured by Nikon
  • pure water was continuously dropped on the resist film at 23 ° C. for 2 minutes while rotating the silicon wafer provided with the resist film after the exposure.
  • this part of the process is theoretically based on the analysis of the immersion liquid exposure method, which is the process of exposing in the complete immersion state. Therefore, the resist film is exposed to light, and the resist film is loaded with pure water that is a refractive index liquid (immersion liquid) after exposure so that only the influence of the immersion liquid on the resist film can be evaluated. If this is the case, it will be a simple structure.
  • PEB treatment was performed at 115 ° C for 90 seconds. After this PEB treatment, it was placed for 15 minutes in an environment where the power of the amine filter was not applied, and then placed in the exposure chamber for 20 minutes. This reserve treatment condition corresponds to a state in which it is left for 60 minutes in a normal environmental atmosphere (where the amine concentration is 2 to 4 ppm). After this leaving treatment, the film was developed with an alkaline developer at 23 ° C. for 60 seconds with the protective film remaining. The alkali current image solution, 2. using 38 mass 0/0 tetramethylammonium Niu arm hydroxide aqueous solution. By this development process, the protective film was completely removed, and the development of the resist film could be realized well.
  • the cleaning solvent according to the present invention has good cleaning performance and is an upper layer after cleaning. Since the protective film can be applied satisfactorily and the foreign matter is reduced to a high degree, it can be used to form an upper protective film for resist films such as resist films and dry thin films used in the immersion exposure process. Suitable for obtaining a resist pattern.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2005/020446 2004-12-06 2005-11-08 半導体製造装置の洗浄用溶剤 WO2006061967A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/792,467 US20080132740A1 (en) 2004-12-06 2005-11-08 Solvent For Cleaning Semiconductor Manufacturing Apparatus
EP05806250A EP1840199A1 (en) 2004-12-06 2005-11-08 Solvent for cleaning semiconductor manufacturing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-353375 2004-12-06
JP2004353375A JP2006160859A (ja) 2004-12-06 2004-12-06 半導体製造装置の洗浄用溶剤

Publications (1)

Publication Number Publication Date
WO2006061967A1 true WO2006061967A1 (ja) 2006-06-15

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ID=36577798

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PCT/JP2005/020446 WO2006061967A1 (ja) 2004-12-06 2005-11-08 半導体製造装置の洗浄用溶剤

Country Status (6)

Country Link
US (1) US20080132740A1 (US06620555-20030916-C00004.png)
EP (1) EP1840199A1 (US06620555-20030916-C00004.png)
JP (1) JP2006160859A (US06620555-20030916-C00004.png)
KR (1) KR20070084614A (US06620555-20030916-C00004.png)
TW (1) TW200630483A (US06620555-20030916-C00004.png)
WO (1) WO2006061967A1 (US06620555-20030916-C00004.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101367252B1 (ko) * 2011-11-10 2014-02-25 제일모직 주식회사 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202298A (ja) * 1983-05-02 1984-11-16 ポリプラスチックス株式会社 金型付着物の除去方法
JPS61159499A (ja) * 1985-01-07 1986-07-19 ポリプラスチックス株式会社 金型付着物の除去方法
JPH0613364A (ja) * 1991-07-12 1994-01-21 Mitsubishi Gas Chem Co Inc シリコンウエハーおよび半導体素子洗浄液
JPH10146844A (ja) * 1996-09-17 1998-06-02 Asahi Chem Ind Co Ltd 金型付着物の除去方法
JP2001194785A (ja) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置
JP2005079222A (ja) * 2003-08-29 2005-03-24 Nikon Corp 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP2005099648A (ja) * 2003-08-25 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378303A (en) * 1980-04-14 1983-03-29 Daikin Kogyo Co., Ltd. Azeotropic solvent composition
US6663723B1 (en) * 2000-10-24 2003-12-16 Advanced Micro Devices, Inc. Vapor drying for cleaning photoresists
US7179774B2 (en) * 2002-06-19 2007-02-20 Henkel Kommanditgesellschaft Auf Aktien Flushing solutions for coatings removal
KR101321150B1 (ko) * 2005-11-29 2013-10-22 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 보호막 재료 및 패턴 형성 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202298A (ja) * 1983-05-02 1984-11-16 ポリプラスチックス株式会社 金型付着物の除去方法
JPS61159499A (ja) * 1985-01-07 1986-07-19 ポリプラスチックス株式会社 金型付着物の除去方法
JPH0613364A (ja) * 1991-07-12 1994-01-21 Mitsubishi Gas Chem Co Inc シリコンウエハーおよび半導体素子洗浄液
JPH10146844A (ja) * 1996-09-17 1998-06-02 Asahi Chem Ind Co Ltd 金型付着物の除去方法
JP2001194785A (ja) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置
JP2005099648A (ja) * 2003-08-25 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JP2005079222A (ja) * 2003-08-29 2005-03-24 Nikon Corp 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法

Also Published As

Publication number Publication date
KR20070084614A (ko) 2007-08-24
TWI341865B (US06620555-20030916-C00004.png) 2011-05-11
US20080132740A1 (en) 2008-06-05
TW200630483A (en) 2006-09-01
JP2006160859A (ja) 2006-06-22
EP1840199A1 (en) 2007-10-03

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